WO1998015058A1 - Self-timed pulse control circuit - Google Patents
Self-timed pulse control circuit Download PDFInfo
- Publication number
- WO1998015058A1 WO1998015058A1 PCT/US1997/017558 US9717558W WO9815058A1 WO 1998015058 A1 WO1998015058 A1 WO 1998015058A1 US 9717558 W US9717558 W US 9717558W WO 9815058 A1 WO9815058 A1 WO 9815058A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- timing
- signal
- coupled
- circuit
- cache
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/10—Address translation
- G06F12/1027—Address translation using associative or pseudo-associative address translation means, e.g. translation look-aside buffer [TLB]
- G06F12/1045—Address translation using associative or pseudo-associative address translation means, e.g. translation look-aside buffer [TLB] associated with a data cache
- G06F12/1054—Address translation using associative or pseudo-associative address translation means, e.g. translation look-aside buffer [TLB] associated with a data cache the data cache being concurrently physically addressed
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/32—Serial access; Scan testing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
- H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates
- H03K3/356156—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates with synchronous operation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
- H03K2005/00019—Variable delay
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
- H03K2005/00019—Variable delay
- H03K2005/00058—Variable delay controlled by a digital setting
- H03K2005/00071—Variable delay controlled by a digital setting by adding capacitance as a load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
- H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Pulse Circuits (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97945362A EP0929939A1 (en) | 1996-09-30 | 1997-09-29 | Self-timed pulse control circuit |
AU46584/97A AU4658497A (en) | 1996-09-30 | 1997-09-29 | Self-timed pulse control circuit |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2732996P | 1996-09-30 | 1996-09-30 | |
US60/027,329 | 1996-09-30 | ||
US08/938,589 US5964884A (en) | 1996-09-30 | 1997-09-26 | Self-timed pulse control circuit |
US08/938,589 | 1997-09-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998015058A1 true WO1998015058A1 (en) | 1998-04-09 |
Family
ID=26702333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/017558 WO1998015058A1 (en) | 1996-09-30 | 1997-09-29 | Self-timed pulse control circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US5964884A (en) |
EP (1) | EP0929939A1 (en) |
AU (1) | AU4658497A (en) |
WO (1) | WO1998015058A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7113015B2 (en) | 2001-11-08 | 2006-09-26 | Infineon Technologies Ag | Circuit for setting a signal propagation time for a signal on a signal line and method for ascertaining timing parameters |
CN109634352A (en) * | 2019-01-08 | 2019-04-16 | 优利德科技(中国)股份有限公司 | A kind of pulse wave generation circuit and pulse wave generation method |
Families Citing this family (31)
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US5940334A (en) * | 1996-09-30 | 1999-08-17 | Advanced Micro Devices, Inc. | Memory interface circuit including bypass data forwarding with essentially no delay |
US5940608A (en) | 1997-02-11 | 1999-08-17 | Micron Technology, Inc. | Method and apparatus for generating an internal clock signal that is synchronized to an external clock signal |
US5946244A (en) | 1997-03-05 | 1999-08-31 | Micron Technology, Inc. | Delay-locked loop with binary-coupled capacitor |
US6173432B1 (en) | 1997-06-20 | 2001-01-09 | Micron Technology, Inc. | Method and apparatus for generating a sequence of clock signals |
US6269451B1 (en) | 1998-02-27 | 2001-07-31 | Micron Technology, Inc. | Method and apparatus for adjusting data timing by delaying clock signal |
US6202139B1 (en) * | 1998-06-19 | 2001-03-13 | Advanced Micro Devices, Inc. | Pipelined data cache with multiple ports and processor with load/store unit selecting only load or store operations for concurrent processing |
US6205518B1 (en) * | 1998-08-05 | 2001-03-20 | International Business Machines Corporation | Apparatus and method for reducing power consumption in a data processor executing an application code |
US6338127B1 (en) | 1998-08-28 | 2002-01-08 | Micron Technology, Inc. | Method and apparatus for resynchronizing a plurality of clock signals used to latch respective digital signals, and memory device using same |
US6279090B1 (en) | 1998-09-03 | 2001-08-21 | Micron Technology, Inc. | Method and apparatus for resynchronizing a plurality of clock signals used in latching respective digital signals applied to a packetized memory device |
US6349399B1 (en) | 1998-09-03 | 2002-02-19 | Micron Technology, Inc. | Method and apparatus for generating expect data from a captured bit pattern, and memory device using same |
US6430696B1 (en) | 1998-11-30 | 2002-08-06 | Micron Technology, Inc. | Method and apparatus for high speed data capture utilizing bit-to-bit timing correction, and memory device using same |
US6374360B1 (en) | 1998-12-11 | 2002-04-16 | Micron Technology, Inc. | Method and apparatus for bit-to-bit timing correction of a high speed memory bus |
US6470060B1 (en) | 1999-03-01 | 2002-10-22 | Micron Technology, Inc. | Method and apparatus for generating a phase dependent control signal |
JP4073157B2 (en) * | 2000-08-21 | 2008-04-09 | 富士通株式会社 | Cache system with a limited number of tag memory accesses |
DE10116914B4 (en) * | 2001-04-05 | 2005-08-04 | Infineon Technologies Ag | Circuit arrangement with a memory field |
US6801989B2 (en) | 2001-06-28 | 2004-10-05 | Micron Technology, Inc. | Method and system for adjusting the timing offset between a clock signal and respective digital signals transmitted along with that clock signal, and memory device and computer system using same |
US6889369B1 (en) * | 2001-07-26 | 2005-05-03 | Advanced Micro Devices, Inc. | Method and apparatus for determining critical timing path sensitivities of macros in a semiconductor device |
US7243217B1 (en) * | 2002-09-24 | 2007-07-10 | Advanced Micro Devices, Inc. | Floating point unit with variable speed execution pipeline and method of operation |
US7168027B2 (en) | 2003-06-12 | 2007-01-23 | Micron Technology, Inc. | Dynamic synchronization of data capture on an optical or other high speed communications link |
DE10340405B3 (en) * | 2003-09-02 | 2004-12-23 | Infineon Technologies Ag | Integrated semiconductor memory with selective reduction of effective bit line length for reducing current requirement by partial disconnection of second bit line section from first bit line section |
US6984991B2 (en) * | 2004-05-11 | 2006-01-10 | International Business Machines Corporation | Initialization of a bidirectional, self-timed parallel interface with automatic testing of AC differential wire pairs |
US20050278505A1 (en) * | 2004-05-19 | 2005-12-15 | Lim Seow C | Microprocessor architecture including zero impact predictive data pre-fetch mechanism for pipeline data memory |
US7417918B1 (en) * | 2004-09-29 | 2008-08-26 | Xilinx, Inc. | Method and apparatus for configuring the operating speed of a programmable logic device through a self-timed reference circuit |
WO2006045029A1 (en) * | 2004-10-19 | 2006-04-27 | Platform Solutions, Inc. | Processing of self-modifying code in multi-address-space and multi-processor systems |
US20070074007A1 (en) | 2005-09-28 | 2007-03-29 | Arc International (Uk) Limited | Parameterizable clip instruction and method of performing a clip operation using the same |
US9812954B1 (en) | 2014-09-17 | 2017-11-07 | University Of South Florida | Secure converter-gating, reconfiguration, and regulation |
US9748837B1 (en) * | 2014-09-17 | 2017-08-29 | University Of South Florida | Time delayed converter reshuffling |
TWI537975B (en) * | 2014-11-27 | 2016-06-11 | 常憶科技股份有限公司 | Self-timed differential amplifier |
US9496854B2 (en) | 2015-03-10 | 2016-11-15 | International Business Machines Corporation | High-speed latch circuits by selective use of large gate pitch |
US10217507B2 (en) * | 2016-11-08 | 2019-02-26 | Globalfoundries Inc. | Bending circuit for static random access memory (SRAM) self-timer |
US10978139B2 (en) | 2019-06-04 | 2021-04-13 | Qualcomm Incorporated | Dual-mode high-bandwidth SRAM with self-timed clock circuit |
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US4714924A (en) * | 1985-12-30 | 1987-12-22 | Eta Systems, Inc. | Electronic clock tuning system |
EP0302795A2 (en) * | 1987-08-07 | 1989-02-08 | Fujitsu Limited | Semiconductor memory circuit having a delay circuit |
US5023840A (en) * | 1989-02-03 | 1991-06-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having testing function and testing method thereof |
EP0536689A1 (en) * | 1991-10-09 | 1993-04-14 | Fujitsu Limited | Variable delay circuit |
EP0550215A2 (en) * | 1992-01-02 | 1993-07-07 | Advanced Micro Devices, Inc. | A CMOS gate having a programmable driving power characteristic |
Family Cites Families (3)
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US5812832A (en) * | 1993-01-29 | 1998-09-22 | Advanced Micro Devices, Inc. | Digital clock waveform generator and method for generating a clock signal |
US5559752A (en) * | 1995-08-14 | 1996-09-24 | Alliance Semiconductor Corporation | Timing control circuit for synchronous static random access memory |
US5796993A (en) * | 1996-10-29 | 1998-08-18 | Maguire; Jeffrey E. | Method and apparatus for semiconductor device optimization using on-chip verification |
-
1997
- 1997-09-26 US US08/938,589 patent/US5964884A/en not_active Expired - Fee Related
- 1997-09-29 EP EP97945362A patent/EP0929939A1/en not_active Withdrawn
- 1997-09-29 WO PCT/US1997/017558 patent/WO1998015058A1/en not_active Application Discontinuation
- 1997-09-29 AU AU46584/97A patent/AU4658497A/en not_active Abandoned
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US4714924A (en) * | 1985-12-30 | 1987-12-22 | Eta Systems, Inc. | Electronic clock tuning system |
EP0302795A2 (en) * | 1987-08-07 | 1989-02-08 | Fujitsu Limited | Semiconductor memory circuit having a delay circuit |
US5023840A (en) * | 1989-02-03 | 1991-06-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having testing function and testing method thereof |
EP0536689A1 (en) * | 1991-10-09 | 1993-04-14 | Fujitsu Limited | Variable delay circuit |
EP0550215A2 (en) * | 1992-01-02 | 1993-07-07 | Advanced Micro Devices, Inc. | A CMOS gate having a programmable driving power characteristic |
Non-Patent Citations (1)
Title |
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GREUB H J ET AL: "KEY COMPONENTS OF THE FAST REDUCED INSTRUCTION SET COMPUTER (FRISC) EMPLOYING ADVANCED BIPOLAR DIFFERENTIAL LOGIC AND WAFER SCALE MULTICHIP PACKAGING", PROCEEDINGS OF THE BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, MINNEAPOLIS, SEPT. 12 - 13, 1988, no. -, 12 September 1988 (1988-09-12), JOPKE J, pages 19 - 22, XP000255385 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7113015B2 (en) | 2001-11-08 | 2006-09-26 | Infineon Technologies Ag | Circuit for setting a signal propagation time for a signal on a signal line and method for ascertaining timing parameters |
DE10154812B4 (en) * | 2001-11-08 | 2010-04-15 | Qimonda Ag | Circuit for adjusting a signal propagation time of a signal on a signal line |
CN109634352A (en) * | 2019-01-08 | 2019-04-16 | 优利德科技(中国)股份有限公司 | A kind of pulse wave generation circuit and pulse wave generation method |
CN109634352B (en) * | 2019-01-08 | 2024-04-16 | 优利德科技(中国)股份有限公司 | Pulse wave generating circuit and pulse wave generating method |
Also Published As
Publication number | Publication date |
---|---|
AU4658497A (en) | 1998-04-24 |
EP0929939A1 (en) | 1999-07-21 |
US5964884A (en) | 1999-10-12 |
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