WO1998002945A1 - Long pulse vanadate laser - Google Patents

Long pulse vanadate laser Download PDF

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Publication number
WO1998002945A1
WO1998002945A1 PCT/US1997/006887 US9706887W WO9802945A1 WO 1998002945 A1 WO1998002945 A1 WO 1998002945A1 US 9706887 W US9706887 W US 9706887W WO 9802945 A1 WO9802945 A1 WO 9802945A1
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Prior art keywords
laser
diode
repetition rate
pulses
solid
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Application number
PCT/US1997/006887
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French (fr)
Inventor
William L. Nighan, Jr.
Mark S. Keirstead
Tracy W. Vatter
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Spectra-Physics Lasers, Inc.
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Application filed by Spectra-Physics Lasers, Inc. filed Critical Spectra-Physics Lasers, Inc.
Priority to JP10500566A priority Critical patent/JPH10510956A/en
Priority to DE69713863T priority patent/DE69713863T2/en
Priority to EP97922436A priority patent/EP0848863B1/en
Publication of WO1998002945A1 publication Critical patent/WO1998002945A1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094049—Guiding of the pump light
    • H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/117—Q-switching using intracavity acousto-optic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]

Definitions

  • This invention relates to diode-pumped solid-state lasers, and in particular to diode-pumped solid-state lasers that provide long pulses at high repetition rate with high stability
  • Diode-pumped Nd YVO 4 lasers have been used in applications that require short pulses ( ⁇ 20 nsec) at high repetition rates (> 10 kHz) See for example M. S
  • Nd YLF (500 ⁇ sec) or Nd.YAG (200 ⁇ sec), which limits the amount of pulse energy that can be generated at repetition rates below 10 kHz
  • Nd YVO 4 laser pumped at 10 W can provide 200 ⁇ J at low repetition rates
  • YLF laser designated "TFR” by Spectra-Physics Lasers, described by T M Baer, D.F Head, P Gooding, G.J Kintz, S B Hutchison, in "Performance of Diode-Pumped
  • a number of diode-pumped Nd YLF lasers available from Spectra-Physics as the R-series, provides pulses of ⁇ 10 nsec duration (short) at 1 kHz (low repetition rate). If the repetition rate is increased to over 10 kHz (high repetition rate), the pulse durations on the order of 50 nsec (long) can be achieved Although short pulses are typically desirable, long pulses (> 20 nsec, for example) can be useful for certain applications, especially at high repetition rate However, the pulse-to-pulse stability of an Nd.YLF laser at high repetion rate can be poor; for example, the peak-to-peak fluctuations of an Nd.YLF laser at repetition rates over 10 kHz can easily be 50%, which can correspond to an RMS noise of- 8%, which is too noisy for some applications.
  • a diode-pumped solid-state laser with an Nd:YVO 4 laser crystal placed in the resonator of the laser, said resonator incorporating at least two mirrors, with a Q-switch device placed in the laser resonator, with the pump power density and cavity lifetime balanced to provide long Q-switched pulses at high repetition rate with high stability.
  • the laser resonator configuration is relatively symmetric, with the laser crystal placed nearly at the center of the laser resonator.
  • Nd YVO 4 has been incorporated for the first time in a long pulse (>35 nsec), highly stable ( ⁇ 5% RMS), high repetition rate (> 25 kHz) diode-pumped solid-state laser. In a preferred embodiment, it provides over 1 W in average output power.
  • Fig. 1 is a diagram of a Q-switched, diode-pumped, Nd:YVO 4 solid-state laser that provides long pulses (>35 nsec), while highly stable ( ⁇ 5% RMS), at high repetition rate (> 25 kHz). In some embodiments it provides over 1 W of average power.
  • Fig. 2 is a plot of the output pulse duration as a function of repetition rate, and the average output power as a function of repetition rate.
  • the pump power was 5 W.
  • Fig. 1 depicts a diode-pumped Nd:YVO 4 laser that provides a long pulse (>35 nsec), that is highly stable ( ⁇ 5% RMS) from pulse-to-pulse, even at high repetition rate (> 25 kHz). In a preferred embodiment, it provides over 1 W in average output power. In a preferred embodiment, it provides pulse of duration about 70 nsec at repetition rates of about 70 kHz.
  • the laser includes an Output coupler 1 (typical reflectance is 95% at the 1.064 ⁇ m fundamental wavelength), with radius of curvature of 2 m to infinity, typically. All optics are available from Spectra-Physics Laser Components and Accessories Group in Oroville, CA..
  • the laser also includes a beam path 3, optimized in length with the output coupler 1 to provide adequate cavity lifetime to provide a long pulse.
  • a preferred embodiment is 18 cm in length. Examples of other embodiments of the beam path 3 which may be used in the present invention are disclosed in U.S. Patent No. 5,412,683 and Application Serial No. 08/432,301, each of which are incorporated herein by reference.
  • the laser also includes a fold mirror 5 which is highly reflective at the 1.064 ⁇ wavelength (R > 99.5%) and highly transmissive at the diode pump wavelength (T > 90%). This is a flat optic.
  • the laser also includes a Nd:YVO 4 laser crystal 7, available from Litton Airtron in Charlotte North Carolina, in dimension approximately 4 x 4 x 4 mm 3 , and dopant about 0.7%.
  • the laser crystal may be fixtured as described in U.S. Patent
  • the laser also includes an acousto-optic Q-switch 9, made of SF10 glass or any other glass, like fused silica, to provide adequate loss for Q-switching.
  • an acousto-optic Q-switch 9 made of SF10 glass or any other glass, like fused silica, to provide adequate loss for Q-switching.
  • a vendor of these devices is NEOS, in Melbourne Florida.
  • the laser also includes an end-mirror 1 1, highly reflective at 1.064 ⁇ m, radius of curvature from 2 m to infinity.
  • the laser also includes a Q-switch driver 13, providing RF of the appropriate frequency to the acousto-optic Q-switch, such as 80 MHz, at the appropriate power, such as 2 - 4 W, to provide controllable loss for Q-switching the cavity.
  • a Q-switch driver 13 providing RF of the appropriate frequency to the acousto-optic Q-switch, such as 80 MHz, at the appropriate power, such as 2 - 4 W, to provide controllable loss for Q-switching the cavity.
  • the laser also includes imaging optics 21, for relaying the light from a diode pump source into the laser crystal.
  • imaging optics 21 for relaying the light from a diode pump source into the laser crystal.
  • These simple lenses are available from Melles Griot, Irvine, CA, and many other sources.
  • a typical pump spot size is 0.5 to 0.6 mm, in the laser crystal.
  • the laser also includes fiber bundle 23, for relaying diode light to the imaging optics 21.
  • fiber bundle 23 for relaying diode light to the imaging optics 21.
  • One vendor for these bundles is Spectra-Physics Laser Components and Accessories Group in Oroville, CA.
  • the laser may also include an optional aperture stop 25, with appropriate size to insure TEM ⁇ operation.
  • the laser also includes diode 15, for providing pump light to the solid-state laser.
  • diode 15 A common device is an OPC-B020-808-CS, available from OptoPower Corporation, Arlington, AZ. Six to eight watts from the diode is typical, with 5 to 6 exiting the bundle 23.
  • the laser also includes power supply 17, providing electrical power to the diode and maintaining the diode temperature.
  • Q-switch driver 13 is also typically housed in the power supply 17.
  • the laser also includes output beam 19, which is typically over 1 W in average power, with highly stable, long, Q-switched pulses.
  • the combination of diode-pumped Nd:YNO 4 in a cavity of appropriate length and cavity lifetime results in long pulses (> 35 nsec, with > 50 nsec in a preferred embodiment) at high repetition rate ( > 25 kHz, with > 50 kHz preferred) at high stability ( ⁇ 5% RMS).
  • the high gain and short lifetime of Nd:YVO 4 combine with the cavity lifetime to provide this unique performance.
  • This gain material has never been used in prior art to provide such long pulses at such high stability; this performance is required in some applications.
  • the prior art with this material describes only short pulse generation (20 nsec), even at repetition rates as high as 80 kHz.
  • Fig. 2. depicts the performance of the laser of Figure 1. Pulses of duration approximately 70 nsec were obtained at approximately 70 kHz, in a highly stable beam. In a preferred embodiment, the laser output is TEM 00 , which enhances focusability.

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Abstract

A diode-pumped solid-state laser has been invented that provides long Q-switched pulses at high repetition rate with high stability. The laser incorporates Nd:YVO4 as the gain medium.

Description

LONG PULSE VANADATE LASER
FIELD OF THE TNVF.NTTON This invention relates to diode-pumped solid-state lasers, and in particular to diode-pumped solid-state lasers that provide long pulses at high repetition rate with high stability
BACKGROUND OF THE INVENTION Diode-pumped Nd YVO4 lasers have been used in applications that require short pulses (< 20 nsec) at high repetition rates (> 10 kHz) See for example M. S
Keirstead, T M Baer, S B Hutchison, J Hobbs, "High repetition rate, diode-bar- pumped, Q-switched Nd YVO4 laser", in Conference on Lasers and Electro-Optics, 1993, Vol 1 1, OSA Technical Digest Series (Optical Society of America, Washington, D C , 1993), p 642, and S.B Hutchison, T M Baer, K Cox, P Gooding, D Head, J. Hobbs, M Keirstead, and G Kintz, Diode Pumping of
Average-Power Solid State Lasers, Proc SPIE 1865, 61 (1993) These reports describe operation of Nd YVO4 lasers in a manner that provides short pulses at high repetition rate, as does W.L Nighan, Jr., Mark S Keirstead, Alan B Petersen, and Jan-Willem Pieterse, "Harmonic generation at high repetition rate with Q-switched Nd YVO4 lasers", in SPIE 2380-24, 1995, which discloses generation of Q- switched pulses with an end-pumped, acousto-optically Q-switched laser
In Nighan et al, pulse durations of 7 - 20 nsec were generated for repetition rates of 10 - 80 kHz, at an average output power of ~ 4 W in a TEM^ mode The pump source was a fiber-coupled diode bar, as disclosed in US Patents 5, 127,068 and 5,436,990 End-pumping of Nd:YVO4 with a pump source like this fiber- coupled bar allows generation of very high small signal gain, since this material has a stimulated emission cross-section that is much higher than that of Nd YLF or Nd:YAG This is useful for building a diode-pumped laser with a low laser oscillation threshold, and is also useful for building a laser that provides short pulses at high repetition rates. However, the short upper state lifetime of this material (~
100 μsec) does not allow as much energy storage as is possible with Nd: YLF (500 μsec) or Nd.YAG (200 μsec), which limits the amount of pulse energy that can be generated at repetition rates below 10 kHz For example, an Nd YVO4 laser pumped at 10 W can provide 200 μJ at low repetition rates, while the YLF laser (designated "TFR" by Spectra-Physics Lasers, described by T M Baer, D.F Head, P Gooding, G.J Kintz, S B Hutchison, in "Performance of Diode-Pumped
Nd YAG and Nd YLF in a Tightly Folded Resonator Configuration", IEEE J Quantum Electron , vol QE-28, pp 1 131-1138, 1992) provide ~ 800 μJ
While short ( <20 nsec), energetic pulses are typically desired for many applications, especially at high repetition rate ( >10 kHz), there are some applications that require long Q-switched pulses, such as pulses on the order of 50 nsec In the prior art, the material Nd YVO4 has not been applied to long pulse operation at high repetition rate, since it is typically well-suited for short-pulse generation It is well-known that a CW-pumped, repetitively Q-switched laser will provide progressively longer pulses if the repetition-rate of the laser is progressively increased This is described in "Lasers", by Siegman, in Chapter 26 The reason for this effect is simple As repetition rate is increased (at rates higher than the reciprocal of the upper state lifetime), the maximum amount of energy stored in the gain medium between Q-switched pulses decreases, this stored energy is proportional to the density of ions in the upper state just before Q-switching This means that the small-signal gain is decreased, since the small-signal gain depends upon the density of ions still in the upper state If the small-signal gain is reduced, as it is by increasing the repetition rate, the Q-switched laser pulse will not build up as rapidly in the laser cavity as it would at lower repetition rate Therefore, the pulse will be longer. A number of diode-pumped Nd YLF lasers, available from Spectra-Physics as the R-series, provides pulses of < 10 nsec duration (short) at 1 kHz (low repetition rate). If the repetition rate is increased to over 10 kHz (high repetition rate), the pulse durations on the order of 50 nsec (long) can be achieved Although short pulses are typically desirable, long pulses (> 20 nsec, for example) can be useful for certain applications, especially at high repetition rate However, the pulse-to-pulse stability of an Nd.YLF laser at high repetion rate can be poor; for example, the peak-to-peak fluctuations of an Nd.YLF laser at repetition rates over 10 kHz can easily be 50%, which can correspond to an RMS noise of- 8%, which is too noisy for some applications. This increase in instability is common for a laser for which repetition rate has been increased; since less energy is stored, the laser oscillation is closer to threshold with each increase in repetition rate, and is therefore noisier. For applications that require greater stability at high repetition rate but still need longer pulses, there is a problem in straight forward applications of a low repetition rate laser operating at higher repetition rates; stability is decreased. Some applications require high stability, long pulses, and high repetition rate. An important range that has not been provided by the prior art is repetition rate greater than 25 kHz, pulse duration greater than 35 nsec, and RMS stability less than 5%.
In "A new laser texturing technique for high performance magnetic disk drives", by Baumgart et al (IEEE Transactions on Magnetics, Vol. 31, No. 6, Nov. 1995), it is disclosed that an Nd.YLF laser with 50 nsec pulses is used to provide a highly desirable texture to a magnetic disk, such as a disk used in a computer hard drive. The references and patents that were listed in the Baumgart paper are hereby incorporated by reference; they list a variety of laser-texturing prior art. The Baumgart paper shows that a slight change in pulse energy can change the shape of the "bump" that the single laser pulse leaves on the disk. Multiple bumps are typically left on the disk, as Baumgart describes. In some cases, there is a range of variation that is acceptable, as was disclosed by Baumgart. For this reason, there is a limit on the laser pulse-to-pulse variations that are acceptable. Also, as is obvious to one skilled in the art, a high repetition rate will allow a shorter time requirement for a laser texturing job to be completed.
There is a need for a long pulse, Q-switched laser that provides pulses at high repetition rate with high stability. There is also a need for a laser with harmonically converted output with high stability. SUMMARY OF THE INVENTION
It is an object of the invention to provide a diode-pumped solid-state laser that provides long Q-switched pulses at high repetition rate with high stability. It is an object of the invention to provide a diode-pumped solid-state laser that provides long Q-switched pulses at high repetition rate with high stability, with the solid-state laser incorporating Nd:YVO4 as the gain medium.
It is an object of the invention to provide a diode-pumped solid-state laser that provides Q-switched pulses longer than 35 nsec, at repetition rates higher than 25 kHz, and with RMS noise of the pulsed output at less than 5%.
It is an object of the invention to provide a diode-pumped solid-state laser that provides Q-switched pulses longer than 35 nsec, at repetition rates higher than 25 kHz, and with RMS noise of the pulsed output at less than 5%, with the solid- state laser incorporating Nd:YVO4 as the gain medium. It is an object of the invention to provide a diode-pumped solid-state laser that provides long Q-switched pulses at high repetition rate with high stability, with the solid-state laser incorporating Nd:YVO4 as the gain medium, with a harmonic generator included with the laser in order to harmonically convert the output of the laser. It is an object of the invention to provide a diode-pumped solid-state laser that provides long Q-switched pulses at high repetition rate with high stability, with the solid-state laser incorporating Nd:YVO4 as the gain medium, with this solid- state laser applied to a laser texturing application.
These and other objects of the invention are achieved in a diode-pumped solid-state laser, with an Nd:YVO4 laser crystal placed in the resonator of the laser, said resonator incorporating at least two mirrors, with a Q-switch device placed in the laser resonator, with the pump power density and cavity lifetime balanced to provide long Q-switched pulses at high repetition rate with high stability.
In one embodiment, the laser resonator configuration is relatively symmetric, with the laser crystal placed nearly at the center of the laser resonator.
With this invention, Nd: YVO4 has been incorporated for the first time in a long pulse (>35 nsec), highly stable (< 5% RMS), high repetition rate (> 25 kHz) diode-pumped solid-state laser. In a preferred embodiment, it provides over 1 W in average output power.
DETAILED DESCRIPTION OF THE DRAWINGS
Fig. 1 is a diagram of a Q-switched, diode-pumped, Nd:YVO4 solid-state laser that provides long pulses (>35 nsec), while highly stable (< 5% RMS), at high repetition rate (> 25 kHz). In some embodiments it provides over 1 W of average power.
Fig. 2 is a plot of the output pulse duration as a function of repetition rate, and the average output power as a function of repetition rate. The pump power was 5 W.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Fig. 1 depicts a diode-pumped Nd:YVO4 laser that provides a long pulse (>35 nsec), that is highly stable (< 5% RMS) from pulse-to-pulse, even at high repetition rate (> 25 kHz). In a preferred embodiment, it provides over 1 W in average output power. In a preferred embodiment, it provides pulse of duration about 70 nsec at repetition rates of about 70 kHz.
As illustrated in Fig. 1 the laser includes an Output coupler 1 (typical reflectance is 95% at the 1.064 μm fundamental wavelength), with radius of curvature of 2 m to infinity, typically. All optics are available from Spectra-Physics Laser Components and Accessories Group in Oroville, CA..
The laser also includes a beam path 3, optimized in length with the output coupler 1 to provide adequate cavity lifetime to provide a long pulse. A preferred embodiment is 18 cm in length. Examples of other embodiments of the beam path 3 which may be used in the present invention are disclosed in U.S. Patent No. 5,412,683 and Application Serial No. 08/432,301, each of which are incorporated herein by reference. The laser also includes a fold mirror 5 which is highly reflective at the 1.064 μ wavelength (R > 99.5%) and highly transmissive at the diode pump wavelength (T > 90%). This is a flat optic.
The laser also includes a Nd:YVO4 laser crystal 7, available from Litton Airtron in Charlotte North Carolina, in dimension approximately 4 x 4 x 4 mm3, and dopant about 0.7%. The laser crystal may be fixtured as described in U.S. Patent
No. 5,412,683, and Application Serial Nos. 08/191,654 and 08/427,055, each of which are incorporated herein by reference.
The laser also includes an acousto-optic Q-switch 9, made of SF10 glass or any other glass, like fused silica, to provide adequate loss for Q-switching. A vendor of these devices is NEOS, in Melbourne Florida.
The laser also includes an end-mirror 1 1, highly reflective at 1.064 μm, radius of curvature from 2 m to infinity.
The laser also includes a Q-switch driver 13, providing RF of the appropriate frequency to the acousto-optic Q-switch, such as 80 MHz, at the appropriate power, such as 2 - 4 W, to provide controllable loss for Q-switching the cavity.
The laser also includes imaging optics 21, for relaying the light from a diode pump source into the laser crystal. These simple lenses are available from Melles Griot, Irvine, CA, and many other sources. A typical pump spot size is 0.5 to 0.6 mm, in the laser crystal.
The laser also includes fiber bundle 23, for relaying diode light to the imaging optics 21. One vendor for these bundles is Spectra-Physics Laser Components and Accessories Group in Oroville, CA. The laser may also include an optional aperture stop 25, with appropriate size to insure TEM^ operation.
The laser also includes diode 15, for providing pump light to the solid-state laser. A common device is an OPC-B020-808-CS, available from OptoPower Corporation, Tucson, AZ. Six to eight watts from the diode is typical, with 5 to 6 exiting the bundle 23.
The laser also includes power supply 17, providing electrical power to the diode and maintaining the diode temperature. Q-switch driver 13 is also typically housed in the power supply 17.
The laser also includes output beam 19, which is typically over 1 W in average power, with highly stable, long, Q-switched pulses. The combination of diode-pumped Nd:YNO4 in a cavity of appropriate length and cavity lifetime results in long pulses (> 35 nsec, with > 50 nsec in a preferred embodiment) at high repetition rate ( > 25 kHz, with > 50 kHz preferred) at high stability (< 5% RMS). The high gain and short lifetime of Nd:YVO4 combine with the cavity lifetime to provide this unique performance. This gain material has never been used in prior art to provide such long pulses at such high stability; this performance is required in some applications. The prior art with this material describes only short pulse generation (20 nsec), even at repetition rates as high as 80 kHz. An example of an application that requires longer pulses is magnetic disk texturing. Fig. 2. depicts the performance of the laser of Figure 1. Pulses of duration approximately 70 nsec were obtained at approximately 70 kHz, in a highly stable beam. In a preferred embodiment, the laser output is TEM00, which enhances focusability.
Changes and modifications in the specifically described embodiments can be carried out without departing from the scope of the invention which is intended to be limited only by the scope of the appended claims.

Claims

CLAIMS What is claimed is
1 A diode-pumped solid-state laser that provides long Q-switched pulses at high repetition rate with high stability, with the solid-state laser incorporating Nd YVO4 as the gain medium
2 A diode-pumped solid-state laser that provides Q-switched pulses longer than 35 nsec, at repetition rates higher than 25 kHz, and with RMS noise of the pulsed output at less than 5%, with the solid-state laser incorporating Nd YVO4 as the gain medium.
3 A diode-pumped solid-state laser that provides Q-switched pulses longer than 35 nsec, at repetition rates higher than 25 kHz, and with RMS noise of the pulsed output at less than 5%, with the solid-state laser incorporating Nd YVO4 as the gain medium, with the laser used to provide a texture on the surface of a hard disk for a computer hard drive
PCT/US1997/006887 1996-04-10 1997-04-08 Long pulse vanadate laser WO1998002945A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10500566A JPH10510956A (en) 1996-04-10 1997-04-08 Long pulse vanadium laser
DE69713863T DE69713863T2 (en) 1996-04-10 1997-04-08 Vanadate laser for long pulses
EP97922436A EP0848863B1 (en) 1996-04-10 1997-04-08 Long pulse vanadate laser

Applications Claiming Priority (2)

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US08/630,829 US6922419B1 (en) 1996-04-10 1996-04-10 Long pulse vanadate laser
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EP0848863A1 (en) 1998-06-24
US20060007968A1 (en) 2006-01-12
DE69713863T2 (en) 2003-03-06
JPH10510956A (en) 1998-10-20
DE69713863D1 (en) 2002-08-14
US6922419B1 (en) 2005-07-26
EP0848863B1 (en) 2002-07-10

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