WO1998000894A3 - Optisches halbleiterbauelement mit tiefem rippenwellenleiter - Google Patents

Optisches halbleiterbauelement mit tiefem rippenwellenleiter Download PDF

Info

Publication number
WO1998000894A3
WO1998000894A3 PCT/EP1997/003585 EP9703585W WO9800894A3 WO 1998000894 A3 WO1998000894 A3 WO 1998000894A3 EP 9703585 W EP9703585 W EP 9703585W WO 9800894 A3 WO9800894 A3 WO 9800894A3
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide
optical
optical semiconductor
centre
semiconductor component
Prior art date
Application number
PCT/EP1997/003585
Other languages
English (en)
French (fr)
Other versions
WO1998000894A2 (de
Inventor
Kaspar Duetting
Edgar Kuehn
Original Assignee
Alsthom Cge Alcatel
Kaspar Duetting
Edgar Kuehn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Cge Alcatel, Kaspar Duetting, Edgar Kuehn filed Critical Alsthom Cge Alcatel
Priority to US09/029,722 priority Critical patent/US6181722B1/en
Priority to EP97936626A priority patent/EP0847606A2/de
Priority to JP10503855A priority patent/JPH11511911A/ja
Publication of WO1998000894A2 publication Critical patent/WO1998000894A2/de
Publication of WO1998000894A3 publication Critical patent/WO1998000894A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3421—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer structure of quantum wells to influence the near/far field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

In der digitalen optischen Nachrichtenübertragung werden optische Halbleiterbauelemente eingesetzt, die einen Übergangsbereich zur Aufweitung des Modenfeldes einer Lichtwelle aufweisen, um Kopplungsverluste bei der Ankopplung an eine optische Faser oder einen optischen Wellenleiter einer Trägerplatte zu vermindern. Ein optisches Halbleiterbauelement (BE1; BE2) enthält auf einem Substrat (SUB) angeordnet einen tiefen Rippenwellenleiter (RIDGE) mit einer Deckschicht (DS). Der Rippenwellenleiter (RIDGE) hat einen ersten (MQW) und einen zweiten (BULK) Wellenleiterkern. Der erste Wellenleiterkern (MQW) enthält eine oder mehrere optisch aktive Halbleiterschichten. In einem ersten Übergangsbereich (UB1) nimmt die Schichtdicke des zweiten Wellenleiterkernes (BULK) entlang einer Längsrichtung (L) des Rippenwellenleiters (RIDGE) ab. Dadurch weicht eine in dem optischen Halbleiterbauelement (BE1; BE2) geführte Lichtwelle in das den Wellenleiterkern umgebende Halbleitermaterial von Deckschicht (DS) und Substrat (SUB) aus, wodurch ihr Modenfeld aufgeweitet wird.
PCT/EP1997/003585 1996-06-28 1997-06-26 Optisches halbleiterbauelement mit tiefem rippenwellenleiter WO1998000894A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US09/029,722 US6181722B1 (en) 1996-06-28 1997-06-26 Optical semiconductor component with a deep ridged waveguide
EP97936626A EP0847606A2 (de) 1996-06-28 1997-06-26 Optisches halbleiterbauelement mit tiefem rippenwellenleiter
JP10503855A JPH11511911A (ja) 1996-06-28 1997-06-26 ディープリッジ型ウェーブガイドを有する光半導体構成要素

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19626113.9 1996-06-28
DE19626113A DE19626113A1 (de) 1996-06-28 1996-06-28 Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter

Publications (2)

Publication Number Publication Date
WO1998000894A2 WO1998000894A2 (de) 1998-01-08
WO1998000894A3 true WO1998000894A3 (de) 1998-02-19

Family

ID=7798379

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1997/003585 WO1998000894A2 (de) 1996-06-28 1997-06-26 Optisches halbleiterbauelement mit tiefem rippenwellenleiter

Country Status (5)

Country Link
US (1) US6181722B1 (de)
EP (1) EP0847606A2 (de)
JP (1) JPH11511911A (de)
DE (1) DE19626113A1 (de)
WO (1) WO1998000894A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19626113A1 (de) 1996-06-28 1998-01-02 Sel Alcatel Ag Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter
JP2967737B2 (ja) * 1996-12-05 1999-10-25 日本電気株式会社 光半導体装置とその製造方法
US7164818B2 (en) * 2001-05-03 2007-01-16 Neophontonics Corporation Integrated gradient index lenses
US6253015B1 (en) * 2000-02-08 2001-06-26 Corning Incorporated Planar waveguides with high refractive index
AU2452302A (en) 2000-07-21 2002-02-05 Mark B Lyles Sunscreen formulations containing nucleic acids
US20030044118A1 (en) * 2000-10-20 2003-03-06 Phosistor Technologies, Inc. Integrated planar composite coupling structures for bi-directional light beam transformation between a small mode size waveguide and a large mode size waveguide
FR2816064B1 (fr) * 2000-10-27 2003-03-07 Thomson Csf Procede de realisation d'un guide d'onde, notamment optique, et dispositif de couplage optique comportant un tel guide
US6873638B2 (en) * 2001-06-29 2005-03-29 3M Innovative Properties Company Laser diode chip with waveguide
US6922508B2 (en) * 2001-08-17 2005-07-26 Fujitsu Limited Optical switching apparatus with adiabatic coupling to optical fiber
US8538208B2 (en) * 2002-08-28 2013-09-17 Seng-Tiong Ho Apparatus for coupling light between input and output waveguides
US7426328B2 (en) * 2002-08-28 2008-09-16 Phosistor Technologies, Inc. Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength
US7303339B2 (en) * 2002-08-28 2007-12-04 Phosistor Technologies, Inc. Optical beam transformer module for light coupling between a fiber array and a photonic chip and the method of making the same
JP6274224B2 (ja) * 2014-01-10 2018-02-07 富士通株式会社 光半導体素子及びその製造方法
US10359569B2 (en) * 2016-05-09 2019-07-23 Huawei Technologies Co., Ltd. Optical waveguide termination having a doped, light-absorbing slab

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641049A1 (de) * 1993-08-31 1995-03-01 Fujitsu Limited Optischer Halbleitervorrichtung und Herstellungsverfahren

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0498170B1 (de) * 1991-02-08 1997-08-27 Siemens Aktiengesellschaft Integriert optisches Bauelement für die Kopplung zwischen unterschiedlich dimensionierten Wellenleitern
JPH0794833A (ja) * 1993-09-22 1995-04-07 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
DE4412254A1 (de) * 1994-04-07 1995-10-12 Hertz Inst Heinrich Optisches Koppelglied und Verfahren zu dessen Herstellung
WO1995031741A1 (de) * 1994-05-18 1995-11-23 Siemens Aktiengesellschaft Halbleiterbauelement mit verzweigtem wellenleiter
JPH08116135A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 導波路集積素子の製造方法，及び導波路集積素子
DE19626113A1 (de) 1996-06-28 1998-01-02 Sel Alcatel Ag Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter
DE19626130A1 (de) * 1996-06-28 1998-01-08 Sel Alcatel Ag Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter
JPH10221572A (ja) * 1997-02-07 1998-08-21 Fujitsu Ltd 光装置
US6052397A (en) * 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641049A1 (de) * 1993-08-31 1995-03-01 Fujitsu Limited Optischer Halbleitervorrichtung und Herstellungsverfahren

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BRENNER T ET AL: "COMPACT INGAASP/INP LASER DIODES WITH INTEGRATED MODE EXPANDER FOR EFFICIENT COUPLING TO FLAT-ENDED SINGLEMODE FIBRES", ELECTRONICS LETTERS, vol. 31, no. 17, 17 August 1995 (1995-08-17), pages 1443 - 1445, XP000528969 *
EL YUMIN S ET AL: "MONOLITHIC INTEGRATION OF GAINASP/INP COLLIMATING GRIN LENS WITH TAPERED WAVEGUIDE ACTIVE REGION", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, HOKKAIDO, MAY 9 - 13, 1995, no. CONF. 7, 9 May 1995 (1995-05-09), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 721 - 724, XP000630704 *
SATZKE K ET AL: "Ultrahigh-bandwidth (42 GHz) polarisation-independent ridge waveguide electroabsorption modulator based on tensile strained InGaAsP MQW", ELECTRONICS LETTERS, 9 NOV. 1995, UK, vol. 31, no. 23, ISSN 0013-5194, pages 2030 - 2032, XP002049133 *

Also Published As

Publication number Publication date
WO1998000894A2 (de) 1998-01-08
JPH11511911A (ja) 1999-10-12
US6181722B1 (en) 2001-01-30
EP0847606A2 (de) 1998-06-17
DE19626113A1 (de) 1998-01-02

Similar Documents

Publication Publication Date Title
WO1998000894A3 (de) Optisches halbleiterbauelement mit tiefem rippenwellenleiter
US20050123232A1 (en) Planar waveguide optical isolator in thin silicon-on-isolator (SOI) structure
US20040202440A1 (en) Mode transformation and loss reduction in silicon waveguide structures utilizing tapered transition regions
EP0935149A3 (de) Elément de commutation avec guide d'onde à coeur élargi
WO2003065088A3 (en) Multi-mode interfrence optical waveguide device
WO1999044042A3 (en) Waveguide structures
CA2104278A1 (en) Optical Integrated Circuit Having Light Detector
CA2041460A1 (en) Optical branching waveguide
AU7529598A (en) Integrated optical circuit
EP0933654A3 (de) Antireflektierende Beschichtungen
WO1997037255A3 (de) Integriert optischer Feldweitentransformator
CA2245409A1 (en) Planar optical waveguide
CA2127861A1 (en) Coupling structure of optical fibers and optical waveguides
CA2002098A1 (en) Optical switch
CA2245418A1 (en) Hybrid optical waveguide and manufacturing method thereof
CA2328785A1 (en) Lateral trenching for cross coupling suppression in integrated optics chips
TW339413B (en) Method and arrangement for connecting a waveguide to a component
EP0590951A3 (de) Halbleiterlaser
CA2328787A1 (en) Integrated optics chip having reduced surface wave propagation
US5546488A (en) Waveguide-type optical path converter for converting a propagation direction of a light
US5887103A (en) Nonlinear grating coupler using a tapered or stepped nonlinear thin film
WO2003058288A3 (en) Lens coupling fiber attachment for polymer optical waveguide on polymer substrate
WO2001040849A3 (en) Electro-optic switching assembly and method
WO2002014916A3 (en) Integrated optical device
SE9902916L (sv) Modulator och integrerad krets

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

AK Designated states

Kind code of ref document: A3

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

ENP Entry into the national phase

Ref country code: JP

Ref document number: 1998 503855

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 1997936626

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 1997936626

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 09029722

Country of ref document: US

WWR Wipo information: refused in national office

Ref document number: 1997936626

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1997936626

Country of ref document: EP