WO1997036317A3 - A method for producing a semiconductor device having semiconductor layers of sic by the use of an implanting step and a device produced thereby - Google Patents

A method for producing a semiconductor device having semiconductor layers of sic by the use of an implanting step and a device produced thereby Download PDF

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Publication number
WO1997036317A3
WO1997036317A3 PCT/SE1997/000532 SE9700532W WO9736317A3 WO 1997036317 A3 WO1997036317 A3 WO 1997036317A3 SE 9700532 W SE9700532 W SE 9700532W WO 9736317 A3 WO9736317 A3 WO 9736317A3
Authority
WO
WIPO (PCT)
Prior art keywords
sic
semiconductor
producing
layer
implanting step
Prior art date
Application number
PCT/SE1997/000532
Other languages
French (fr)
Other versions
WO1997036317A2 (en
Inventor
Adolf Schoener
Kurt Rottner
Nils Nordell
Original Assignee
Abb Research Ltd
Adolf Schoener
Kurt Rottner
Nils Nordell
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd, Adolf Schoener, Kurt Rottner, Nils Nordell filed Critical Abb Research Ltd
Priority to JP53433397A priority Critical patent/JP4530432B2/en
Priority to EP97915822A priority patent/EP0890186B1/en
Priority to DE69735056T priority patent/DE69735056T2/en
Publication of WO1997036317A2 publication Critical patent/WO1997036317A2/en
Publication of WO1997036317A3 publication Critical patent/WO1997036317A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Abstract

A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other comprises: a step a) of growing a first semiconductor layer (1) of SiC; a step b) following on step a) of implanting an impurity dopant into said first layer for forming a second doped surface layer (3) as a sub-layer therein; and a step c) following upon step b) and in which a third semiconductor layer (4) of SiC is epitaxially grown on top of said second layer of SiC.
PCT/SE1997/000532 1996-03-27 1997-03-26 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP AND A DEVICE PRODUCED THEREBY WO1997036317A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP53433397A JP4530432B2 (en) 1996-03-27 1997-03-26 Method of manufacturing a semiconductor device having a SiC semiconductor layer using an implantation process
EP97915822A EP0890186B1 (en) 1996-03-27 1997-03-26 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP
DE69735056T DE69735056T2 (en) 1996-03-27 1997-03-26 METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH SiC SEMICONDUCTOR LAYERS BY MEANS OF IMPLANTING STEP

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9601176-2 1996-03-27
SE9601176A SE9601176D0 (en) 1996-03-27 1996-03-27 A method of producing a semiconductor device having semiconductor layers of SiC using the implanting step and a device produced thereby
US08/636,969 US5705406A (en) 1996-03-27 1996-04-24 Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique

Publications (2)

Publication Number Publication Date
WO1997036317A2 WO1997036317A2 (en) 1997-10-02
WO1997036317A3 true WO1997036317A3 (en) 1997-11-27

Family

ID=26662561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE1997/000532 WO1997036317A2 (en) 1996-03-27 1997-03-26 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP AND A DEVICE PRODUCED THEREBY

Country Status (3)

Country Link
US (1) US5705406A (en)
SE (1) SE9601176D0 (en)
WO (1) WO1997036317A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011279A (en) * 1997-04-30 2000-01-04 Cree Research, Inc. Silicon carbide field controlled bipolar switch
SE9701724D0 (en) * 1997-05-09 1997-05-09 Abb Research Ltd A pn diode of SiC and a method of production thereof
US5932894A (en) * 1997-06-26 1999-08-03 Abb Research Ltd. SiC semiconductor device comprising a pn junction
SE9901410D0 (en) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
WO2004100225A2 (en) * 2003-05-01 2004-11-18 The University Of South Carolina A system and method for fabricating diodes
CN101258608B (en) * 2005-09-08 2010-05-19 三菱电机株式会社 Semiconductor device and method of fabricating semiconductor device
US7595241B2 (en) * 2006-08-23 2009-09-29 General Electric Company Method for fabricating silicon carbide vertical MOSFET devices
US7691711B2 (en) * 2008-01-31 2010-04-06 General Electric Company Method for fabricating silicon carbide vertical MOSFET devices
US7906427B2 (en) * 2008-10-14 2011-03-15 General Electric Company Dimension profiling of SiC devices
SE541290C2 (en) 2017-09-15 2019-06-11 Ascatron Ab A method for manufacturing a grid

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
EP0627761A2 (en) * 1993-04-30 1994-12-07 Texas Instruments Incorporated Epitaxial overgrowth method and devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775882A (en) * 1986-11-19 1988-10-04 Rockwell International Corporation Lateral bipolar transistor
JPH01109738A (en) * 1987-10-22 1989-04-26 Nec Corp Manufacture of semiconductor device
US5135885A (en) * 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
JPH0383332A (en) * 1989-08-28 1991-04-09 Sharp Corp Manufacture of silicon carbide semiconductor device
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5378642A (en) * 1993-04-19 1995-01-03 General Electric Company Method of making a silicon carbide junction field effect transistor device for high temperature applications
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
EP0627761A2 (en) * 1993-04-30 1994-12-07 Texas Instruments Incorporated Epitaxial overgrowth method and devices

Also Published As

Publication number Publication date
WO1997036317A2 (en) 1997-10-02
SE9601176D0 (en) 1996-03-27
US5705406A (en) 1998-01-06

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