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Active matrix substrate

Info

Publication number
WO1997013177A1
WO1997013177A1 PCT/JP1996/002858 JP9602858W WO1997013177A1 WO 1997013177 A1 WO1997013177 A1 WO 1997013177A1 JP 9602858 W JP9602858 W JP 9602858W WO 1997013177 A1 WO1997013177 A1 WO 1997013177A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
transistor
electrostatic
film
device
substrate
Prior art date
Application number
PCT/JP1996/002858
Other languages
English (en)
French (fr)
Inventor
Takashi Satou
Original Assignee
Seiko Epson Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136204Arrangements to prevent high voltage or static electricity failures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/103Materials and properties semiconductor a-Si
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
PCT/JP1996/002858 1995-10-03 1996-10-02 Active matrix substrate WO1997013177A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27958795 1995-10-03
JP7/279587 1995-10-03

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR19977003391A KR100270468B1 (ko) 1995-10-03 1996-10-02 박막소자의 제조방법,액티브 매트릭스 기판,액정표시장치,액티브 매트릭스 기판의 제조방법,및 액정표시장치에 포함되는 능동소자의 정전파괴방지방법
US08849288 US5930607A (en) 1995-10-03 1996-10-02 Method to prevent static destruction of an active element comprised in a liquid crystal display device
JP50655397A JP3261699B2 (ja) 1995-10-03 1996-10-02 アクティブマトリクス基板
US11431947 USRE44267E1 (en) 1995-10-03 1996-10-02 Method to prevent static destruction of an active element comprised in a liquid crystal display device
US09903639 USRE38292E1 (en) 1995-10-03 1997-05-30 Method to prevent static destruction of an active element comprised in a liquid crystal display device
US10458803 US20050233509A1 (en) 1995-10-03 2003-06-11 Method to prevent static destruction of an active element comprised in a liquid crystal display device
US11006561 US20050082541A1 (en) 1995-10-03 2004-12-08 Method to prevent static destruction of an active element comprised in a liquid crystal display device
US11006568 US20050084999A1 (en) 1995-10-03 2004-12-08 Method to prevent static destruction of an active element comprised in a liquid crystal display device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US08849288 A-371-Of-International US5930607A (en) 1995-10-03 1996-10-02 Method to prevent static destruction of an active element comprised in a liquid crystal display device
US09903639 Reissue USRE38292E1 (en) 1995-10-03 1997-05-30 Method to prevent static destruction of an active element comprised in a liquid crystal display device

Publications (1)

Publication Number Publication Date
WO1997013177A1 true true WO1997013177A1 (en) 1997-04-10

Family

ID=17613072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1996/002858 WO1997013177A1 (en) 1995-10-03 1996-10-02 Active matrix substrate

Country Status (5)

Country Link
US (8) USRE44267E1 (ja)
JP (1) JP3261699B2 (ja)
KR (1) KR100270468B1 (ja)
CN (6) CN100414411C (ja)
WO (1) WO1997013177A1 (ja)

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US7067983B2 (en) 2003-05-19 2006-06-27 Seiko Epson Corporation Electro-optical device and electronic apparatus
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JP2007108341A (ja) * 2005-10-12 2007-04-26 Toshiba Matsushita Display Technology Co Ltd アクティブマトリックス型表示装置
JP2010010721A (ja) * 2005-11-15 2010-01-14 Semiconductor Energy Lab Co Ltd ダイオード及びアクティブマトリクス表示装置
JP2010098304A (ja) * 2008-09-19 2010-04-30 Semiconductor Energy Lab Co Ltd 表示装置
JP2010107977A (ja) * 2008-10-03 2010-05-13 Semiconductor Energy Lab Co Ltd 表示装置
US7808606B2 (en) 2007-07-25 2010-10-05 Seiko Epson Corporation Method for manufacturing substrate, liquid crystal display apparatus and method for manufacturing the same, and electronic device
US8228585B2 (en) 2010-02-04 2012-07-24 Seiko Epson Corporation Substrate for electro-optical devices, electro-optical device and electronic apparatus
US8467028B2 (en) 2005-03-29 2013-06-18 Japan Display West Inc. Electro-optical device and electronic apparatus
JP2014115658A (ja) * 2008-09-12 2014-06-26 Semiconductor Energy Lab Co Ltd 表示装置
US8829529B2 (en) 2000-04-12 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Illumination apparatus
JP2014179636A (ja) * 2014-05-01 2014-09-25 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015118387A (ja) * 2004-05-21 2015-06-25 株式会社半導体エネルギー研究所 半導体装置
JP2015207779A (ja) * 2015-06-16 2015-11-19 株式会社半導体エネルギー研究所 半導体装置
US9257947B2 (en) 2013-09-27 2016-02-09 Mitsubishi Electric Corporation Semiconductor device
US9318610B2 (en) 2000-02-22 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

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