WO1996039720A1 - Incandescent light energy conversion with reduced infrared emission - Google Patents
Incandescent light energy conversion with reduced infrared emission Download PDFInfo
- Publication number
- WO1996039720A1 WO1996039720A1 PCT/US1996/009886 US9609886W WO9639720A1 WO 1996039720 A1 WO1996039720 A1 WO 1996039720A1 US 9609886 W US9609886 W US 9609886W WO 9639720 A1 WO9639720 A1 WO 9639720A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- layer
- sic
- energy
- silicon carbide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/02—Incandescent bodies
- H01K1/04—Incandescent bodies characterised by the material thereof
- H01K1/10—Bodies of metal or carbon combined with other substance
Definitions
- the invention is in the field of the conversion of energy among light , heat and electricity, and in particular to the interchangeable conversion of heat or electricity to low infrared (IR) content incandescent light.
- IR infrared
- Energy is converted from one form to another, such as from heat or electricity to radiant energy including light, in a variety of applications, including illumination, displays and communications.
- electroluminescent light which is accompanied by minimal heat, has been the light source for the densely packed display and communication applications, even though incandescent light contains the most power.
- incandescent light contains the most power.
- infrared (IR) portion of the spectrum has been resulting in the generation of heat that in turn operates to reduce light conversion efficiency and has required added structure to accommodate.
- the incandescence is the product of straight resistance heating.
- the material Silicon Carbide (SiC) in doped bulk form known in the art as " Glow Bars ", is used as heating elements.
- the "Glow Bars” at about 900 degrees C. incandesce with a red- orange color.
- the Edison light bulb, in U.S. Patent 223,898 employed high resistance, coiled, carbon filaments that glowed white, but Edison had to provide the added structure of an evacuated glass bulb for both environmental and physical shock
- Electron Devices Vol. ED-20 No. 11 Nov. 1973, P 1002-1005 there is described a densely packed display using a tungsten filament pattern in an evacuated environment, to be operated at 1200 Degrees C.
- the glowing element has had an emission spectral distribution it has the highest emission rate for any material, much of the power emitted is in the infrared portion of the spectrum and therefore accompanied by considerable waste.
- Energy conversion among heat or electricity and incandescent light is achieved, with the emission eliminating photon energies below a threshold producing as an example reduced IR content, using a high band gap semiconductor element that is tailored in structure and in energy conversion physics to suppress free carrier absorbtion so as to be transparent or reflecting of photon energy that is below the band gap of the semiconductor and to only emit photons with energy above the band gap of the semiconductor.
- a filament such as one of lightly "N" doped 3C-SiC, at about 900 degrees C, will incandesce and radiate in the visible range for energies greater than about 2 eV and will exhibit inefficient emission of photons for energies less than about 2 eV.
- a good visible emitter is also a good visible co l lect r that will convert light to heat.
- Figure 1 is a perspective illustration of the incandescent light emitting element of the invention.
- Figure 2 is a graph of the emission spectrum of the low IR incandescent light emitting element of the invention.
- Figure 3 is a graph showing the idealized relationship of the emittance spectrum of the invention compared with that of a standard black body.
- Figure 4 is a band energy diagram of the light responsiveness of a prior art conventional semiconductor illustrating the effect of free carrier absorbtion.
- Figure 5 is a band energy diagram illustrating the light responsiveness of the invention.
- Figure 6 is a top view of a preferred embodiment of the invention employing 3C-SiC material.
- Figure 7 is side view of the embodiment of Fig. 6.
- a high band gap(>2eV) semiconductor member has its structural and its energy conversion physics interrelatedly tailored to suppress free carrier absorbtion so as to be transparent or reflecting of photon energy that is below the band gap of the semiconductor and to emit efficiently only photon energy above the band gap of the semiconductor.
- the emission spectra of the invention provides incandescent light in the visible range with significantly reduced IR content. provided that is in a free standing filament structural form with means to bring the filament to a moderately high, at or above 900 degrees C. temperature.
- the emission element is a body of a high,(>2eV) band gap, refractory, semiconductor material that is lightly doped to about 10 17 atoms / cc with an extrinsic conductivity determining impurity at least in a region adjacent an emission surface and which body also has the energy conversion properties altered to suppress free carrier absorbtion of photon energy below the band gap.
- the element can convert intense light such as laser light into heat that is not radiated.
- the materials cubic silicon carbide ⁇ 3C-SiC), having a band gap of about 2.3 eV, hexagonal silicon carbide( ⁇ -SiC), having a band gap of about 3 eV; both nitrogen doped to about 10 17 atoms /cc, and the material aluminum nitride (A1N), having a band gap of about 6.1 eV, doped with silicon for "n" type conductivity or with an appropriate acceptor dopant for "p" type conductivity to about 10 17 atoms / cc.; in
- monocrystalline or polycrystalline form for example, high band gap refractory semiconductor materials, and when in a thin film structural shape, at temperatures at or above 900,
- the body 1 is doped lightly to about 10 17 atoms/cc, in the region 2 adjacent the light emitting surface 3, to a depth illustrated dotted as
- the body 1 further is in essentially free standing incandescent radiation filament form.
- the filament is heated, such as by passing electric current at least through the region 2 of the body 1 from region 5 to region 6.
- the filament may also be subjected to direct heating to a temperature of 900 degrees centigrade or higher.
- the body 1 will emit low IR content incandescent light through the surface 3 or convert light with photon energy greater than the band gap impinging on the surface 3 to heat.
- the doping level of the region 2 is principally to provide resistance (R) for heating power (I 2 R) to the region 2 when current (I) is passed through it.
- the thickness dimension between the surface 3 and the interface 4 is involved in the suppression of the total number of free carriers (electrons and holes) that are formed in the region 2.
- the supression of free carriers can also be controlled by selective doping of the region 7 beyond the interface 4 to move the Fermi level in the region 7 to an energy level that operates to prevent the formation of undesired free carriers.
- Figure 2 there is illustrated the emission spectrum of the low IR content incandescent light emitting element of the invention for an example material 3C-SiC.
- FIG. 4 there is shown the light responsiveness of a prior art conventional semiconductor illustrating the black body nature of a semiconductor with sufficient charge carriers to cause free carrier absorbtion and with an emissivity (E) approaching 1 for all photon energies.
- E emissivity
- FIG. 5 there is shown the light responsiveness of the invention illustrating the selective absorbtion and emission properties such that emissivity (E) approaches 1 for light energy (h ⁇ ) greater than the band gap (h ⁇ >Eg) and emissivity
- the valence band energy level labelled “E valence” has the symbol “o” for hole type carriers adjacent thereto and the conduction band energy level
- E conduction has the symbol “o” for electron type carriers adjacent thereto.
- the band gap (Eg) of the material is the energy separation between the valence and conduction bands. Where the light energy h ⁇ is less than the band gap energy (h ⁇ Eg),the light energy is strongly absorbed in a process known as free carrier absorbtion, where free
- the material has fewer electrons and holes so that for light energy less than the band gap (h ⁇ Eg) there is no significant electron or hole excitation, hence
- the light energy is strongly absorbed via hole - electron pair generation. At sufficiently high temperatures this can result in emission of light with photon energy greater than the band gap.
- Absorptance (A) is the property that
- Reflectance (R) is the property that determines the fraction of incident radiation that is reflected.
- T Transmittance
- Emissivity (E) is equal to (A) which is equal to 1-(R+T), and further it is equal to the rate of radiant energy emission per unit area divided by the rate of emission of a black body material for which (A) is 1. For a given temperature a black body has the highest emission rate for any material.
- the materials of this invention will have a spectral distribution of emitted radiation which is black body like for energies above the band gap energy and a greatly attenuated black body spectral distribution for energies less than the band gap.
- the material is a high, >2eV, band gap semiconductor, tailored to suppress free carrier absorption and heated to 900 degrees C. or above a new type of incandescence results.
- the incandescence of the invention provides a greatly
- the incandescent elements of the invention as illustrated in Figure 1 are free standing filamentary in shape with
- the preferred embodiment for the incandescent element is fabrication in the beta or cubic form of the semiconductor material silicon carbide(3C-SiC), which has the beneficial attributes of being strong, stable at high temperature
- the 3C-SiC has an indirect room temperature band gap (Eg) of 2.3 eV and therefore band to band absorbtion of radiation commences for photon energies above 2.3 eV.
- Eg room temperature band gap
- Equation 1 For a material that is weakly absorbing, the emission spectrum of incandescent radiation follows the relationship of Equation 1.
- Equation 1 K(h ⁇ ) ) X ⁇ (h ⁇ , T)
- ⁇ is the normal radiation from a black body
- K is the optical absorbtion coefficient of SiC at that wavelength
- X is the thickness of the material
- incandescent radiation is produced that contains significantly less infrared.
- the supression of the below 2.3 eV absorbtion is accomplished by the use of boron doping in the layer 7 of Figure 1, to about 10 15 atoms / cc, which causes the Fermi level to be pinned at about 0.4 eV above the valence band producing a high resistivity material, and thereby minimizing the free carrier absorbtion.
- the conductive, nitrogen doped layer 2 in Figure 1 is kept thin for the same reasons. By has essentially no free carriers and a thin highly conductive layer 2, an ideal incandescent structure can be realized.
- epitaxial layer 7 is grown on a Si substrate 10 to a
- silicon carbide on silicon uses standard techniques reported in the literature and in essence is accomplished by loading a cleaned silicon wafer into a chemical vapor deposition reactor. Any oxide is removed from the wafer by thermal treatment in excess of 1000 degrees C.
- the silicon wafer is brought to a temperature of about 1400 degrees C. in a gas stream of propane, which forms a thin skin or buffer layer of silicon carbide on the surface of the silicon wafer.
- the temperature is then lowered to about 1350 degrees C. and epitaxial growth of silicon carbide on the the layer thicknesses desired.
- the growth uses three gasses; hydrogen, propane and silane.
- the hydrogen to silane ratio is about 1000 to 1 and the silane to propane ratio is about 3 to
- boron doping is accomplished by adding boron trifluoride to the gas stream.
- boron trifluoride is added to the gas stream.
- nitrogen doping is accomplished by using ammonia. Growth rates up to 3 micrometers per hour can be obtained.
- an etching mask of photoresist the shape of the desired filament and contact area is placed on the epitaxial layers and the shape of the filament 1, with the edges 5 and 6 corresponding to the faces 5 and 6 of Figure 1 is etched out of the layers 2 and 7 using for example plasma etching with sulfur hexafluoride (SF 6 ) gas.
- SF 6 sulfur hexafluoride
- insulation areas 11 and 12 and subsequently for contacts 13 and 14 are defined.
- the insulation layers 15 and 16 of silicon dioxide (SiO 2 ) are deposited on the substrate 10, followed by the masking and deposition of nickel (Ni) ohmic contacts 13 and 14 to the filament 1.
- the insulation areas 15 and 16 are to thermally isolate the to-be-heated region of the filament 1 as much as possible to minimize heat transfer by conduction.
- the ohmic contacts 13 and 14 are annealed in an inert environment at about 1000 degrees C.
- a layer of etch masking is provided to permit etching away of the silicon substrate 10 in the region 17, to allow the filament 1 to become free standing.
- the etching is performed in a dilute solution of hydrofluoric acid (HF).
- HF hydrofluoric acid
- the filament is coated with about 100 Angstroms of aluminum nitride (A1N) which is nominally lattice matched to SiC and which at high temperature renders the filament 1 essentially impervious to oxidation in air at high temperatures.
- the final device is mounted on a support and provided with a cover, if needed and standard wires, not shown, are attached to the contacts 13 and 14 to supply sufficient electrical current from a standard source, not shown, to bring the resistive load, the layer 2 of the filament 1 between the faces 5 and 6 to 900 degrees C. or above.
Landscapes
- Resistance Heating (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96919320A EP0834197A4 (en) | 1995-06-06 | 1996-06-06 | Incandescent light energy conversion with reduced infrared emission |
JP9502071A JPH11508394A (en) | 1995-06-06 | 1996-06-06 | Incandescent energy conversion with reduced infrared radiation |
AU61686/96A AU6168696A (en) | 1995-06-06 | 1996-06-06 | Incandescent light energy conversion with reduced infrared e mission |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/469,675 US5814840A (en) | 1995-06-06 | 1995-06-06 | Incandescent light energy conversion with reduced infrared emission |
US08/469,675 | 1995-06-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996039720A1 true WO1996039720A1 (en) | 1996-12-12 |
Family
ID=23864676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/009886 WO1996039720A1 (en) | 1995-06-06 | 1996-06-06 | Incandescent light energy conversion with reduced infrared emission |
Country Status (5)
Country | Link |
---|---|
US (1) | US5814840A (en) |
EP (1) | EP0834197A4 (en) |
JP (1) | JPH11508394A (en) |
AU (1) | AU6168696A (en) |
WO (1) | WO1996039720A1 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5967795A (en) * | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
DE19843852A1 (en) * | 1998-09-24 | 2000-03-30 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Electrical incandescent lamp has light body(ies) in lamp vessel with flat, esp. strip-shaped, light body element(s) radiating in infrared and visible regions, infrared reflective filter(s) |
US6796866B2 (en) * | 1999-07-08 | 2004-09-28 | California Institute Of Technology | Silicon micromachined broad band light source |
MXPA03010637A (en) * | 2001-05-21 | 2004-12-06 | Pressco Tech Inc | An apparatus and method for providing snapshot action thermal infrared imaging within automated process control article inspection applications. |
US6611085B1 (en) * | 2001-08-27 | 2003-08-26 | Sandia Corporation | Photonically engineered incandescent emitter |
ITTO20020031A1 (en) * | 2002-01-11 | 2003-07-11 | Fiat Ricerche | THREE-DIMENSIONAL TUNGSTEN STRUCTURE FOR AN INCANDESCENT LAMP AND LIGHT SOURCE INCLUDING SUCH STRUCTURE. |
ITTO20030166A1 (en) * | 2003-03-06 | 2004-09-07 | Fiat Ricerche | HIGH EFFICIENCY EMITTER FOR INCANDESCENT LIGHT SOURCES. |
US7368870B2 (en) * | 2004-10-06 | 2008-05-06 | Hewlett-Packard Development Company, L.P. | Radiation emitting structures including photonic crystals |
US8940391B2 (en) | 2010-10-08 | 2015-01-27 | Advanced Ceramic Fibers, Llc | Silicon carbide fibers and articles including same |
US9199227B2 (en) | 2011-08-23 | 2015-12-01 | Advanced Ceramic Fibers, Llc | Methods of producing continuous boron carbide fibers |
US9803296B2 (en) | 2014-02-18 | 2017-10-31 | Advanced Ceramic Fibers, Llc | Metal carbide fibers and methods for their manufacture |
US10954167B1 (en) | 2010-10-08 | 2021-03-23 | Advanced Ceramic Fibers, Llc | Methods for producing metal carbide materials |
US10208238B2 (en) | 2010-10-08 | 2019-02-19 | Advanced Ceramic Fibers, Llc | Boron carbide fiber reinforced articles |
US9275762B2 (en) | 2010-10-08 | 2016-03-01 | Advanced Ceramic Fibers, Llc | Cladding material, tube including such cladding material and methods of forming the same |
US10793478B2 (en) | 2017-09-11 | 2020-10-06 | Advanced Ceramic Fibers, Llc. | Single phase fiber reinforced ceramic matrix composites |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3502930A (en) * | 1967-02-06 | 1970-03-24 | Mikhail Vladimirovich Fok | Incandescent lamp with a glower made of an alloyed semiconductor material |
US3517281A (en) * | 1967-01-25 | 1970-06-23 | Tyco Laboratories Inc | Light emitting silicon carbide semiconductor junction devices |
US3634149A (en) * | 1966-10-25 | 1972-01-11 | Philips Corp | Method of manufacturing aluminium nitride crystals for semiconductor devices |
JPH0548145A (en) * | 1991-08-07 | 1993-02-26 | Toshiba Corp | Optical semiconductor device and its manufacture |
US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA867974A (en) * | 1971-04-06 | V. Fok Mikhail | Electric incandescent lamp | |
GB187904576A (en) * | 1879-11-04 | Thomas Alva Edison | Incandescent lamps | |
US4745007A (en) * | 1985-08-29 | 1988-05-17 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming silicon carbide films on tantalum containing substrates |
US4864186A (en) * | 1988-03-29 | 1989-09-05 | Milewski John V | Single crystal whisker electric light filament |
-
1995
- 1995-06-06 US US08/469,675 patent/US5814840A/en not_active Expired - Fee Related
-
1996
- 1996-06-06 AU AU61686/96A patent/AU6168696A/en not_active Abandoned
- 1996-06-06 JP JP9502071A patent/JPH11508394A/en active Pending
- 1996-06-06 EP EP96919320A patent/EP0834197A4/en not_active Withdrawn
- 1996-06-06 WO PCT/US1996/009886 patent/WO1996039720A1/en not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3634149A (en) * | 1966-10-25 | 1972-01-11 | Philips Corp | Method of manufacturing aluminium nitride crystals for semiconductor devices |
US3517281A (en) * | 1967-01-25 | 1970-06-23 | Tyco Laboratories Inc | Light emitting silicon carbide semiconductor junction devices |
US3502930A (en) * | 1967-02-06 | 1970-03-24 | Mikhail Vladimirovich Fok | Incandescent lamp with a glower made of an alloyed semiconductor material |
US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
JPH0548145A (en) * | 1991-08-07 | 1993-02-26 | Toshiba Corp | Optical semiconductor device and its manufacture |
Non-Patent Citations (2)
Title |
---|
IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. ED-20, No. 11, November 1973, HOCHBERG et al., "A Thin-Film Integrated Incandescent Display", pp. 1002-1005. * |
See also references of EP0834197A4 * |
Also Published As
Publication number | Publication date |
---|---|
US5814840A (en) | 1998-09-29 |
EP0834197A4 (en) | 2001-02-07 |
AU6168696A (en) | 1996-12-24 |
JPH11508394A (en) | 1999-07-21 |
EP0834197A2 (en) | 1998-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5814840A (en) | Incandescent light energy conversion with reduced infrared emission | |
US5091334A (en) | Semiconductor device | |
US4581620A (en) | Semiconductor device of non-single crystal structure | |
US5262350A (en) | Forming a non single crystal semiconductor layer by using an electric current | |
US5859443A (en) | Semiconductor device | |
US4028149A (en) | Process for forming monocrystalline silicon carbide on silicon substrates | |
USRE34658E (en) | Semiconductor device of non-single crystal-structure | |
US20020153522A1 (en) | Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same | |
US5895938A (en) | Semiconductor device using semiconductor BCN compounds | |
JP2003152207A (en) | Photoelectric conversion element and its manufacturing method | |
WO2004079897A2 (en) | High efficiency emitter for incandescent light sources | |
Zhuravlev et al. | Photon-enhanced thermionic emission from p-GaAs with nonequilibrium Cs overlayers | |
US5034784A (en) | Diamond electric device on silicon | |
JP3405099B2 (en) | Color sensor | |
US5075764A (en) | Diamond electric device and manufacturing method for the same | |
US4464415A (en) | Photoelectric conversion semiconductor manufacturing method | |
Williams | InGaAs–CsO, A LOW WORK FUNCTION (LESS THAN 1.0 eV) PHOTOEMITTER | |
CN100399512C (en) | Method of mfg. iron silicide and photoelectric energy converter | |
Solangi et al. | Absorption coefficient of β–SiC grown by chemical vapor deposition | |
US8237161B2 (en) | Amorphous boron carbide films for p-n junctions and method for fabricating same | |
KR100308419B1 (en) | Electrode Fabrication Method of Gallium Nitride Light Emitting Device | |
CN114284409A (en) | Light emitting diode and preparation method thereof | |
Van Hove et al. | III-N light emitting diodes fabricated using RF nitrogen gas source MBE | |
US6900463B1 (en) | Semiconductor device | |
JPH04266020A (en) | Semiconductor diamond |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AU BB BG BR CA CN CZ EE GE HU IL IS JP KP KR LK LR LT LV MG MK MN MX NO NZ PL RO RU SG SI SK TR TT UA UZ VN AM AZ BY KG KZ MD RU TJ TM |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1996919320 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 1997 502071 Kind code of ref document: A Format of ref document f/p: F |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWP | Wipo information: published in national office |
Ref document number: 1996919320 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: CA |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1996919320 Country of ref document: EP |