WO1996037912A1 - Method of planarizing a layer of material - Google Patents
Method of planarizing a layer of material Download PDFInfo
- Publication number
- WO1996037912A1 WO1996037912A1 PCT/US1996/006375 US9606375W WO9637912A1 WO 1996037912 A1 WO1996037912 A1 WO 1996037912A1 US 9606375 W US9606375 W US 9606375W WO 9637912 A1 WO9637912 A1 WO 9637912A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- trace
- trace layer
- slurry
- detecting
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96914585A EP0827630A1 (en) | 1995-05-23 | 1996-05-06 | Method of planarizing a layer of material |
JP8535689A JPH11505961A (en) | 1995-05-23 | 1996-05-06 | Material layer flattening method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/447,809 US5668063A (en) | 1995-05-23 | 1995-05-23 | Method of planarizing a layer of material |
US08/447,809 | 1995-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996037912A1 true WO1996037912A1 (en) | 1996-11-28 |
Family
ID=23777849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/006375 WO1996037912A1 (en) | 1995-05-23 | 1996-05-06 | Method of planarizing a layer of material |
Country Status (5)
Country | Link |
---|---|
US (1) | US5668063A (en) |
EP (1) | EP0827630A1 (en) |
JP (1) | JPH11505961A (en) |
KR (1) | KR100432988B1 (en) |
WO (1) | WO1996037912A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335388B1 (en) | 1997-10-03 | 2002-01-01 | Lavipharm Laboratories Inc. | Prolamine-plant polar lipid composition, its method of preparation and applications thereof |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3649493B2 (en) * | 1995-11-02 | 2005-05-18 | 株式会社荏原製作所 | Polishing end point determination method and apparatus |
US6115233A (en) * | 1996-06-28 | 2000-09-05 | Lsi Logic Corporation | Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region |
US6108093A (en) * | 1997-06-04 | 2000-08-22 | Lsi Logic Corporation | Automated inspection system for residual metal after chemical-mechanical polishing |
US6110831A (en) * | 1997-09-04 | 2000-08-29 | Lucent Technologies Inc. | Method of mechanical polishing |
JPH1187286A (en) | 1997-09-05 | 1999-03-30 | Lsi Logic Corp | Two-staged mechanical and chemical polishing method and system for semiconductor wafer |
US6234883B1 (en) | 1997-10-01 | 2001-05-22 | Lsi Logic Corporation | Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing |
US6531397B1 (en) | 1998-01-09 | 2003-03-11 | Lsi Logic Corporation | Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing |
US6060370A (en) | 1998-06-16 | 2000-05-09 | Lsi Logic Corporation | Method for shallow trench isolations with chemical-mechanical polishing |
US6268224B1 (en) | 1998-06-30 | 2001-07-31 | Lsi Logic Corporation | Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer |
US6077783A (en) * | 1998-06-30 | 2000-06-20 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer |
US6071818A (en) | 1998-06-30 | 2000-06-06 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material |
US6241847B1 (en) | 1998-06-30 | 2001-06-05 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon infrared signals |
US6074517A (en) * | 1998-07-08 | 2000-06-13 | Lsi Logic Corporation | Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer |
US6066266A (en) * | 1998-07-08 | 2000-05-23 | Lsi Logic Corporation | In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation |
US6285035B1 (en) | 1998-07-08 | 2001-09-04 | Lsi Logic Corporation | Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method |
US6080670A (en) * | 1998-08-10 | 2000-06-27 | Lsi Logic Corporation | Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie |
US6201253B1 (en) | 1998-10-22 | 2001-03-13 | Lsi Logic Corporation | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system |
US6325706B1 (en) | 1998-10-29 | 2001-12-04 | Lam Research Corporation | Use of zeta potential during chemical mechanical polishing for end point detection |
US6186865B1 (en) * | 1998-10-29 | 2001-02-13 | Lam Research Corporation | Apparatus and method for performing end point detection on a linear planarization tool |
US6121147A (en) * | 1998-12-11 | 2000-09-19 | Lsi Logic Corporation | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance |
US6117779A (en) * | 1998-12-15 | 2000-09-12 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
US6528389B1 (en) | 1998-12-17 | 2003-03-04 | Lsi Logic Corporation | Substrate planarization with a chemical mechanical polishing stop layer |
US6242352B1 (en) * | 1999-02-08 | 2001-06-05 | United Microelectronics Corp. | Method of preventing micro-scratches on the surface of a semiconductor wafer when performing a CMP process |
US6048256A (en) * | 1999-04-06 | 2000-04-11 | Lucent Technologies Inc. | Apparatus and method for continuous delivery and conditioning of a polishing slurry |
DE19946493C2 (en) * | 1999-09-28 | 2002-05-16 | Infineon Technologies Ag | Process for removing layers |
US6375791B1 (en) | 1999-12-20 | 2002-04-23 | Lsi Logic Corporation | Method and apparatus for detecting presence of residual polishing slurry subsequent to polishing of a semiconductor wafer |
US7751609B1 (en) | 2000-04-20 | 2010-07-06 | Lsi Logic Corporation | Determination of film thickness during chemical mechanical polishing |
US7153182B1 (en) | 2004-09-30 | 2006-12-26 | Lam Research Corporation | System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing |
US9358660B2 (en) | 2011-11-07 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grinding wheel design with elongated teeth arrangement |
US9960088B2 (en) * | 2011-11-07 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | End point detection in grinding |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4879258A (en) * | 1988-08-31 | 1989-11-07 | Texas Instruments Incorporated | Integrated circuit planarization by mechanical polishing |
US5242532A (en) * | 1992-03-20 | 1993-09-07 | Vlsi Technology, Inc. | Dual mode plasma etching system and method of plasma endpoint detection |
US5265378A (en) * | 1992-07-10 | 1993-11-30 | Lsi Logic Corporation | Detecting the endpoint of chem-mech polishing and resulting semiconductor device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4793895A (en) * | 1988-01-25 | 1988-12-27 | Ibm Corporation | In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection |
US5204288A (en) * | 1988-11-10 | 1993-04-20 | Applied Materials, Inc. | Method for planarizing an integrated circuit structure using low melting inorganic material |
US5081421A (en) * | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
US5169491A (en) * | 1991-07-29 | 1992-12-08 | Micron Technology, Inc. | Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques |
US5240552A (en) * | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
US5270241A (en) * | 1992-03-13 | 1993-12-14 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
US5162248A (en) * | 1992-03-13 | 1992-11-10 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
US5222329A (en) * | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
US5209816A (en) * | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
US5234868A (en) * | 1992-10-29 | 1993-08-10 | International Business Machines Corporation | Method for determining planarization endpoint during chemical-mechanical polishing |
US5272117A (en) * | 1992-12-07 | 1993-12-21 | Motorola, Inc. | Method for planarizing a layer of material |
US5328553A (en) * | 1993-02-02 | 1994-07-12 | Motorola Inc. | Method for fabricating a semiconductor device having a planar surface |
US5356513A (en) * | 1993-04-22 | 1994-10-18 | International Business Machines Corporation | Polishstop planarization method and structure |
US5332467A (en) * | 1993-09-20 | 1994-07-26 | Industrial Technology Research Institute | Chemical/mechanical polishing for ULSI planarization |
US5366911A (en) * | 1994-05-11 | 1994-11-22 | United Microelectronics Corporation | VLSI process with global planarization |
-
1995
- 1995-05-23 US US08/447,809 patent/US5668063A/en not_active Expired - Fee Related
-
1996
- 1996-05-06 JP JP8535689A patent/JPH11505961A/en not_active Ceased
- 1996-05-06 KR KR1019970708269A patent/KR100432988B1/en not_active IP Right Cessation
- 1996-05-06 EP EP96914585A patent/EP0827630A1/en not_active Withdrawn
- 1996-05-06 WO PCT/US1996/006375 patent/WO1996037912A1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4879258A (en) * | 1988-08-31 | 1989-11-07 | Texas Instruments Incorporated | Integrated circuit planarization by mechanical polishing |
US5242532A (en) * | 1992-03-20 | 1993-09-07 | Vlsi Technology, Inc. | Dual mode plasma etching system and method of plasma endpoint detection |
US5265378A (en) * | 1992-07-10 | 1993-11-30 | Lsi Logic Corporation | Detecting the endpoint of chem-mech polishing and resulting semiconductor device |
Non-Patent Citations (1)
Title |
---|
ANONYMOUS: "Shallow Trench Planarization Process With Chemical-mechanical Polish Endpoint.", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 33, no. 2, July 1990 (1990-07-01), NEW YORK, US, pages 75 - 76, XP002008638 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335388B1 (en) | 1997-10-03 | 2002-01-01 | Lavipharm Laboratories Inc. | Prolamine-plant polar lipid composition, its method of preparation and applications thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH11505961A (en) | 1999-05-25 |
KR19990014923A (en) | 1999-02-25 |
EP0827630A1 (en) | 1998-03-11 |
KR100432988B1 (en) | 2004-07-16 |
US5668063A (en) | 1997-09-16 |
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