WO1996037000A1 - Light-emitting semiconductor component - Google Patents

Light-emitting semiconductor component

Info

Publication number
WO1996037000A1
WO1996037000A1 PCT/DE1996/000761 DE9600761W WO9637000A1 WO 1996037000 A1 WO1996037000 A1 WO 1996037000A1 DE 9600761 W DE9600761 W DE 9600761W WO 9637000 A1 WO9637000 A1 WO 9637000A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
active
mesa
layer
radiation
zone
Prior art date
Application number
PCT/DE1996/000761
Other languages
German (de)
French (fr)
Inventor
Jochen Heinen
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure

Abstract

An LED with a cylindrical active region (a) arranged coaxially inside a cylindrical mesa of semiconductor material between covering layers (p, n) of opposite polarity, in which the radii of the cylinders of the active region and the mesa, and the height of the mesa, are such that there is no total reflection of the radiation emitted from the active region on the lateral surfaces of the mesa.

Description

description

A light-emitting semiconductor device

The present invention relates to a semiconductor light emitting diode having short rise and fall times of the generation of radiation, and high external efficiency of the waste radiation.

Efficient optical coupler with high Grenzfreguenz need In¬ frarotdioden (or light) with short rise and fall times of the Ab¬ radiation as well as high efficiency of the external radiation. Rapid change possibility of radiation is lung generation achieved, inter alia, that the active region is doped such that the volume of the active region is made as small as possible, that is provided for a high current density of the injected current, and in that gerin¬ ge parasitic capacitances and inductors are available. A high external efficiency, ie high Strahlungsausbeu¬ te outwardly, is achieved when the radiation generated in the semiconductor crystal and radiated in all directions mög¬ lichst impinges at an angle on the interface between the semiconductor material and the environment in which no total reflection occurs , so that the radiation can emerge from the crystal.

In DE AS 1,297,230 is a light emitting diode Halbleiter¬ described which consists of a cylindrical disc of n type GaAs with a diameter of about 2 mm and having a thickness of about 250 microns. In this disc, a p-type active region is formed by diffusion of zinc atoms. This active zone is circular and flat konzen¬ arranged symmetrical to the disc and has a diameter of about 0.5 mm and a depth of about 10 microns. The ratio of the radii of the active zone and the cylindrical disc is chosen so that the emitted light to the shell of the cylinder formed by the disc no total reflection (total internal reflection) erf hrt. In GB 2,280,061 A an LED is described in which the light exits on the upper side and a Bragg reflector is provided for a reflection of the radiation in this direction on the opposite side of the exit surface of the active layer. In EP 0582078 AI an intended for the superluminescent LED is written be¬, wherein the laterally incident on oblique end faces of the active layer, light is first reflected Flektor at right angles to an arranged parallel to this layer Bragg Re¬ and then perpendicular Flektor of this Re¬ is reflected upward. In DE 42 31 007 Al a LED is described in which an opening provided for the light exit front including the nearly flat sides tenflächen with the exception of a covered with a contact Be¬ rich improving a coupling out the radiation reflection-reducing layer is covered.

The object of the present invention is to provide a convincing strahlungser- semiconductor device with a high degree of external Wirkungs¬ radiation and faster control capability of the radiation intensity.

This object is achieved with the semiconductor diode having the features of claim 1. Further embodiments result from the dependent claims.

In the inventive light emitting diode is a provided for generating radiation cylindrical active region of semiconductor material in the interior of a cylindrical mesa and is arranged coaxially to this mesa. The ratio of the radii of the jackets of the cylinders of this active region, and this mesa is determined so that in all directions of the emitted radiation from the active zone there is no total reflection on the mantle of the cylinder formed by the mesa. In a preferred embodiment, this diode are located below and above the active zone as Bragg reflectors wirken- de layer sequences of layers of alternating high and low refractive index, grenzungsfläche the radiation to the lateral Be¬ of the mesa, that is to coat the formed of the mesa cylinder reflect.

There follows a more detailed description of preferred exemplary embodiments of this diode with reference to FIGS. 1 to 3

Figure 1 shows the dimensions of the mesa and the active region in plan view.

Figures 2 and 3 show embodiments of the SEN erfindungsgemä¬ diode in cross section.

The diode is preferably composed of epitaxially grown layers. The drawn in figure 2 active Zo¬ ne A is preferably composed of MQW layers (Multiple Quantum Well), which guarantee a small volume of the radiation-generating active regions with short lifetimes of the charge carriers and thus great speed, and also a low absorption for which it penetrating radiation be¬ sit. The active zone containing layer or MQW layer structure is between vertically with respect to the plane shift to and arranged for the radiation-transparent cladding layers (p, n) are arranged. These cladding layers kön- NEN up to a few microns thickness and having on verschie¬ which doped sides of the active region for electrical conduction zuein¬ other opposite conductivity types. These cladding layers p, n can each follow layers or Schicht¬ comprise be¬ affect the reflection of incident radiation to the lateral boundary surface of the mesa out under suitable for the exit of the radiation from the mesa angle. When the diode z. is for example in the material system GaAs rea¬ lisiert, the cladding layers of AlGaAs can substantially having an Al content of z. B. consist of 10% to 15%, and total reflection of guided radiation in the cladding layers to the side surface of the mesa down to layers of AlGaAs with an Al content of z. B. 70% to 100% may be present. Instead, acting as Bragg reflectors layer sequence can be present which th of a sequence of Schich¬ consist of alternating higher and lower refractive index. The thickness of these layers is so dimensioned that this layer sequences act for it, auf¬ from the active zone radiation incident as Bragg reflectors B, which ren the radiation to the lateral boundary surfaces of the mesa reflektie¬. The radiation is therefore substantially in the range zwi¬ exploiting that Bragg reflectors B held, so that on top of the active region and the cladding layers enthal¬ Tenden cylindrical Mesa a can be applied for current injection provided contact K, without thereby a would covers for light exit intended region with a material , the radiation is absorbed or reflected. If the active zone a is provided in a layer consisting of a material suitable for Strählungserzeugung semiconductor material and covers the entire lateral dimension of the mesa, the area is generated in the radiation acting on the vor¬ seen cylindrical active zone in the middle Mesa loading are limited by the current injection takes place only in this area. , The contact K is as shown in Figure 2 for this purpose, applied only in the region F of the with respect to the layer plane perpendicular projection of the active region on the upper cladding layer is p and the outer this ring-shaped region by an insulator layer I of the Halblei¬ termaterial electrically insulated. In this exemplary embodiment, the game mesa is on a substrate that is conductively doped elek¬ symmetrical and gegen¬ on its opposite the mesa back is provided with a second terminal contact K. For the sequence of layers of semiconductor materials of the mesa z can. As the material system of GaAs are used. Ternary layers are then z. B. from AlGaAs, AlInGaAs quaternized ary layers. Likewise, the material system InP for this diode is usable.

In the embodiment of Figure 3, the envisaged for current injection contact on the top of the mesa is only in the annular outer area around the plane to shift perpendicular projection of the active region. The contact points on the active zone has a round opening, in this example, which is provided as a window for the exit of the radiation. In this embodiment, z can. B. be omitted, only the top Bragg reflector. To the Stromin¬ jection to concentrate on the active zone in the center, is located laterally below the contact, a layer sequence with pnp or npn junctions upper gears. This layer sequence z is. B. formed in that a is grown for electrical conduction of the opposite thereto Leit¬ capacity type doped layer in the upper cladding layer. Stromin¬ jection into the active region is made possible in that in the region of the layer planes perpendicular with respect to the projection of the active region z tion. B. this oppositely doped layer is redoped in the upper cladding layer by implantation or Dif¬ fusion of dopant, so that in the region above the active zone are no pn or np junctions exist. The provided with diffused dopant region D indicated in Figure 3 by the dashed line. On the mantle of the cylinder formed by the mesa for reducing the partial reflection, an antireflection coating AR auf¬ is accommodated.

The mesa forms a cylinder of radius R (see FIG. 1). The active zone in the interior of this mesa is preferably likewise cylindrical case with the radius r. The active zone ent may be formed in the intended shape not by a cylindrical layer of Strahlungser¬ for generating a suitable semiconductor material be formed or by the described arrangement of the current injection for vor¬ viewed contact. According to the invention the ratio of the radii of these cylinders is selected such that all laterally emitted beams of radiation sources in the active zone at most at an angle α to the perpendicular (surface normal) impinge on the surface of the mantle of the cylinder formed by the mesa, which is smaller than the critical angle for the Totalre- to flexion between Semiconductors' crystal and the surrounding Medi¬. 1 shows the beam path for three different outlet directions of the radiation with arrows is shown as an example. From the center of the active zone starting the radiation impinges perpendicularly on the outer surface of the mesa and leaves the straight mesa. Of the edge regions of the active zone (z. B. from point A) emitted radiation is incident at the angle α to the normal on the outer surface and is refracted in the direction of the drawn in by a solid line arrow and the broken line arrow. The thickness of the cladding layers between the Bragg reflectors or the height of the mesa is sized so that zu¬ together with the ratio of the drawn in Figure 1 Ra¬ dien R, r at the lower and upper edge of the cylinder jacket of the mesa no total reflection of the radiation takes place. In semiconductor material having refractive index of about 3.4 and air as the surrounding medium Mesa approximately a limit value of 0.3 for the ratio r / R is obtained for very flat mesas. This limit must not be exceeded if To- talreflexion should be avoided. The active zone may therefore be smaller for a given dimension of the mesa, as would correspond to this limit value. If the diode is embedded in a transparent for the Strah¬ lung amorphous solid, erge¬, larger values ​​for the ratio r / R ben. When the diode z. B. ein¬ is embedded in cast resin with a refractive index of about 1.5, then when the specified refractive index of the semiconductor material of the limit value for the ratio r / R is about 0.44. Due to the required rapid response of the diode to changes in the applied voltage, the volume of the active region, that is, the radius r is chosen quite small. Low is a value for R between 20 microns and 40 microns.

On closer consideration must also take into account the wer¬ that the point of the generation of radiation and the point at which the radiation leaves the mesa, not in the same plane with respect to the layer sequence must lie. The angle between the direction of radiation in the mesa and the perpendicular to the side surface of the mesa, from which the radiation aus¬ occurs at the point of the radiation outlet is in the following also denoted by α. A maximum value increases, this angle to a direction of radiation which is directed from a point on the edge of the active zone starting at a point on the Man¬ tel of the cylinder formed by the mesa that is on the side facing this point, the radiation generating section. So you only need the points Strahlungserzeu¬ supply to be considered on the edge of the active zone. The distance of the point at which the radiation leaves the Mesa, from the coplanar to the plane of the layer plane in which takes place the generation of the respective light beam is hereinafter referred to as h. In this level of Strahlungser¬ generation is denoted by θ the angle that is einge- concluded from the directional in the plane of the radiation generating from the center of the active region to this point of the radiation generating radius, and from the relation to the layer planes perpendicular projection from said Mittel¬ point of the active zone to the point of exit of the radiative from the mesa directional path in the plane of the generating radiation.

In plan view, the view shown in Figure 1 results in the generation point of the radiation A on the edge of the active zone and the point of exit of the radiation B of the mesa, said directed to these points, the point of the active zone Mittel¬ emanating rays in the plane of the radiation generating projected θ form the angle. In this case, however, the point B of the Strahlungsaus- passage is set perpendicular to the plane ver¬ up or down; the point A lies in the plane (plane of the radiation generation). The angle θ but is measured in the Zeichen¬ level. To point B is to be projected perpendicular to Zeichen¬ plane into the plane. The angle α is now however to be regarded as a spatial angle formed between the perpendicular to the jacket of the Zylin¬ formed by the mesa DERS at point B and the connecting line between the score points A and B. one obtains the following equation, in which the perpendicular distance to the plane of the point B from the plane of the drawing labeled h be¬ again for this angle is:

cos α = (R - r cos θ) (R 2 - 2Rr cos θ + r 2 + h 2) -1/2

The angle α is maximum when the following applies:

cos θ = (r 2 + h 2) / (r R), or θ = 0 in the case of h> (Rr - r 2) from 1/2.

For the value of sin α, the maximum of the quotient Bre¬ monitoring indices of the external medium and the Halbleitermateria- les of the mesa may be the same, we obtain:

sin α = (2 r 2 + h) 1/2 / R h <= (Rr - r 2) 1/2

sin α = h ((Rr) 2 + h 2) -1 / 2 = H> (Rr - r 2) from 1/2.

The figures given are examples of 0.3 and 0.5 for r / R is (Rr - r 2)1/2 = 0.458 R = 0.5 and R, ie at a sym¬ metric layer structure of the mesa, the height the mesa almost equal to half the diameter, approximately examples in practical Ausfüh¬ unlikely to be realized. One can therefore assume that the maximum value of sin α is given by the term (r 2 + h 2) 1 / / R. The maximum angle to the Norma¬ drop on the cylinder surface of the mesa is thus obtained for the radiation which comes from the edge of the active zone to the upper or lower edge of the mesa, in the radiation direction, which is perpendicular to the connecting distance between the point A of the radiation production and with respect to the layer plane perpendicular projection of Mit¬ telpunktes the active zone in the koplana- to the layer plane ren plane of exit of the radiation from the mesa (ie, approximately the upper or lower base surface of the mesa ge ¬ formed cylinder).

Claims

claims
1. A semiconductor light emitting diode having a sequence from be¬ züglich a layer plane above the other grown layers of semiconductor material, arranged one generation for Strahlungser¬ provided active zone (a) in a layer of suitable for generating radiation of semiconductor material between vertically with respect to the layer plane thereto and for electrical conduction mutually opposite conductibility higkeitεtypen doped Mantelεchichten (p, n), in which this layer sequence is formed in a cylindrical mesa aus¬ at which this active zone is cylindrical and is disposed coaxially to the formed through this mesa cylinder, wherein the quotient the radii of the shells of the ak¬ of this tive zone formed by the cylinder and the gebil¬ Mesa Deten cylinder more than the value of the quotient of the refractive indices of this mesa in the layer plane of the active zone surrounding this material and the active zone into diesel ser-plane u mgebenden this material Mesa owns and in which these cladding layers are provided with means which direct the radiation towards the shell of the mesa forming cylinder.
2. The diode of claim 1, wherein the dimensions of the mesa and the active zone are so ge selects that on the mantle of the cylinder formed by the mesa each point, which is provided for escape of generated radiation in the active zone, by at most has such a distance from a plane parallel to the layer plane level in the active region, that the means of by the radius of the cylinder divided Man¬ root formed by the mesa from the sum of the square of this distance and the square of the radius of the jacket of the gebilde¬ from the active zone th cylinder more than the value of the quotient of the monitoring Bre¬ indices of the surrounding mesa has this in the layer plane of the active area material and the active zone surrounding this in die¬ ser material layer plane of the mesa.
3. The diode of claim 1 or 2, wherein the mesa is surrounded by air, and the ratio of the radii of the coats formed from the active zone Zylin¬ DERS and the cylinder formed by the mesa is not more than 0.3.
4. The diode of claim 1 or 2, wherein the mesa is surrounded by a material permeable to the active in the zone to er¬ imaging radiation amorphous solid, and the ratio of the radii of the shells of the cylinder formed by the akti¬ ven zone and of the cylinder Mesa formed is at most 0.5.
5. The diode of any of claims 1 to 4, wherein the cladding layers each comprise a layer that vertical distance from the plane of the layer of the active zone is in a with respect to the layer planes arranged and a low refractive index than the material toward the active zone adjacent to this layer.
6. The diode of claim 5, wherein the cladding layers are essentially Al and x Ga_- x As x is at least 0.1 and not more than 0.15 in which the layer of lower refractive index, each of Al x Ga ι - x As x is at least 0 is at most 7 and the first
7. The diode of any of claims 1 to 6, wherein the cladding layers th, respectively, a layer sequence on each grown from be¬ züglich the layer plane Schich¬ comprise different refractive indices and in which these layers are arranged in alternating higher and lower refractive index and each as thick are that this sequence of layers forming a Bragg reflector for each of the wavelengths of the radiation generated in the active layer.
8. The diode of any of claims 1 to 7, wherein the active zone (a) by a region in a
Layer is formed of strahlungserzeugendem semiconductor material and is in on an area of ​​the Zy¬ formed by the mesa Linders a contact (K) is present, which is provided for current injection into the active region and a cladding layer in a region on with respect to the layer plane vertical projection of the active region is limited, is elek¬ trically conductive manner.
9. The diode of any of claims 1 to 7, wherein the active zone (a) by a region in a
Layer is formed of strahlungserzeugendem semiconductor material, in which on a base of the ZY formed by the mesa Linders a contact (K) is present, which is provided for current injection into the active region and electrically connected to a cladding layer (p), in which and having this contact in an area that includes at least with respect to the layer plane perpendicular projection of the active region (a), a window-like recess in which the cladding layer (p) with this contact is electrically conductively connected outside this vertical with respect to the layer plane projection of the active region a layer sequence comprising, in a layer (s) which is doped for this cladding layer of opposite conductivity type, vertically with respect to the layer plane is arranged between layers which are doped for the conductivity type of the cladding layer.
10. The diode of any of claims 1 to 9, wherein the radius of the cladding of the active region begren¬ collapsing cylinder between 20 microns and 40 microns.
PCT/DE1996/000761 1995-05-18 1996-05-02 Light-emitting semiconductor component WO1996037000A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19518347.9 1995-05-18
DE19518347 1995-05-18

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Publication Number Publication Date
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000045443A1 (en) * 1999-01-28 2000-08-03 Nova Crystals, Inc. High performance light emitting diodes
DE19911717A1 (en) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithic electroluminescent device, especially an LED chip, has a row of emission zones individually associated with decoupling elements for decoupling radiation from the device
WO2001080322A2 (en) * 2000-04-19 2001-10-25 Osram Opto Semiconductors Gmbh High-radiance led chip and a method for producing the same
DE10039435A1 (en) * 2000-08-11 2002-02-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component used as an illuminating diode or semiconductor laser comprises an active layer, a contact surface and a cylindrical semiconductor body
DE10054966A1 (en) * 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Component for optoelectronics
US7135711B2 (en) 2001-08-30 2006-11-14 Osram Opto Semiconductors Gmbh Electroluminescent body
DE19953160B4 (en) * 1998-11-20 2009-01-22 Philips Lumileds Lighting Company, LLC, San Jose Improved electrode structures for light emitting devices
US7943944B2 (en) 2002-07-31 2011-05-17 Osram Opto Semiconductors Gmbh GaN-based radiation-emitting thin-layered semiconductor component
DE10142541B4 (en) * 2001-08-30 2013-10-17 Osram Opto Semiconductors Gmbh Electroluminescent body
US8604497B2 (en) 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1062639A (en) * 1963-12-13 1967-03-22 Standard Telephones Cables Ltd Light emitting semiconductor devices
EP0047591A2 (en) * 1980-09-10 1982-03-17 Northern Telecom Limited Light emitting diodes with high external quantum efficiency
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1062639A (en) * 1963-12-13 1967-03-22 Standard Telephones Cables Ltd Light emitting semiconductor devices
EP0047591A2 (en) * 1980-09-10 1982-03-17 Northern Telecom Limited Light emitting diodes with high external quantum efficiency
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19953160B4 (en) * 1998-11-20 2009-01-22 Philips Lumileds Lighting Company, LLC, San Jose Improved electrode structures for light emitting devices
WO2000045443A1 (en) * 1999-01-28 2000-08-03 Nova Crystals, Inc. High performance light emitting diodes
DE19911717A1 (en) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithic electroluminescent device, especially an LED chip, has a row of emission zones individually associated with decoupling elements for decoupling radiation from the device
WO2001080322A2 (en) * 2000-04-19 2001-10-25 Osram Opto Semiconductors Gmbh High-radiance led chip and a method for producing the same
DE10019665A1 (en) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh LED chip and process for its preparation
WO2001080322A3 (en) * 2000-04-19 2002-03-28 Osram Opto Semiconductors Gmbh High-radiance led chip and a method for producing the same
US7306960B2 (en) 2000-04-19 2007-12-11 Osram Gmbh High radiance LED chip and a method for producing same
US7026657B2 (en) 2000-04-19 2006-04-11 Osram Gmbh High radiance led chip and a method for producing same
DE10039435A1 (en) * 2000-08-11 2002-02-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component used as an illuminating diode or semiconductor laser comprises an active layer, a contact surface and a cylindrical semiconductor body
US6897488B2 (en) 2000-11-06 2005-05-24 Osram Opto Semiconductors Gmbh Radiation-emitting chip
DE10054966A1 (en) * 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Component for optoelectronics
US7135711B2 (en) 2001-08-30 2006-11-14 Osram Opto Semiconductors Gmbh Electroluminescent body
DE10142541B4 (en) * 2001-08-30 2013-10-17 Osram Opto Semiconductors Gmbh Electroluminescent body
US7943944B2 (en) 2002-07-31 2011-05-17 Osram Opto Semiconductors Gmbh GaN-based radiation-emitting thin-layered semiconductor component
US8604497B2 (en) 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip

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