WO1996004674A3 - A self-aligned gate field emitter device and methods for producing the same - Google Patents
A self-aligned gate field emitter device and methods for producing the same Download PDFInfo
- Publication number
- WO1996004674A3 WO1996004674A3 PCT/GB1995/001760 GB9501760W WO9604674A3 WO 1996004674 A3 WO1996004674 A3 WO 1996004674A3 GB 9501760 W GB9501760 W GB 9501760W WO 9604674 A3 WO9604674 A3 WO 9604674A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- field emitter
- self
- producing
- metal layer
- methods
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Weting (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69511877T DE69511877T2 (en) | 1994-08-05 | 1995-07-25 | FIELD DETECTING DEVICE WITH SELF-ADJUSTED GATE ELECTRODE AND METHOD FOR THE PRODUCTION THEREOF |
JP8506293A JPH10503877A (en) | 1994-08-05 | 1995-07-25 | Self-aligned gate type field emission device and method of manufacturing the same |
US08/776,540 US5818153A (en) | 1994-08-05 | 1995-07-25 | Self-aligned gate field emitter device and methods for producing the same |
EP95926455A EP0774159B1 (en) | 1994-08-05 | 1995-07-25 | A self-aligned gate field emitter device and method for producing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9415892A GB9415892D0 (en) | 1994-08-05 | 1994-08-05 | A self-aligned gate field emitter device and methods for producing the same |
GB9415892.0 | 1994-08-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1996004674A2 WO1996004674A2 (en) | 1996-02-15 |
WO1996004674A3 true WO1996004674A3 (en) | 1996-05-02 |
Family
ID=10759477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1995/001760 WO1996004674A2 (en) | 1994-08-05 | 1995-07-25 | A self-aligned gate field emitter device and methods for producing the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US5818153A (en) |
EP (1) | EP0774159B1 (en) |
JP (1) | JPH10503877A (en) |
DE (1) | DE69511877T2 (en) |
GB (1) | GB9415892D0 (en) |
WO (1) | WO1996004674A2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0789382A1 (en) * | 1996-02-09 | 1997-08-13 | International Business Machines Corporation | Structure and method for fabricating of a field emission device |
JP3079993B2 (en) * | 1996-03-27 | 2000-08-21 | 日本電気株式会社 | Vacuum micro device and manufacturing method thereof |
KR100365444B1 (en) * | 1996-09-18 | 2004-01-24 | 가부시끼가이샤 도시바 | Vacuum micro device and image display device using the same |
US6130106A (en) | 1996-11-14 | 2000-10-10 | Micron Technology, Inc. | Method for limiting emission current in field emission devices |
US5956611A (en) * | 1997-09-03 | 1999-09-21 | Micron Technologies, Inc. | Field emission displays with reduced light leakage |
US6376983B1 (en) * | 1998-07-16 | 2002-04-23 | International Business Machines Corporation | Etched and formed extractor grid |
US6552477B2 (en) * | 1999-02-03 | 2003-04-22 | Micron Technology, Inc. | Field emission display backplates |
US6822386B2 (en) * | 1999-03-01 | 2004-11-23 | Micron Technology, Inc. | Field emitter display assembly having resistor layer |
US6235179B1 (en) | 1999-05-12 | 2001-05-22 | Candescent Technologies Corporation | Electroplated structure for a flat panel display device |
US6596146B1 (en) | 2000-05-12 | 2003-07-22 | Candescent Technologies Corporation | Electroplated structure for a flat panel display device |
US6626720B1 (en) * | 2000-09-07 | 2003-09-30 | Motorola, Inc. | Method of manufacturing vacuum gap dielectric field emission triode and apparatus |
TW483025B (en) * | 2000-10-24 | 2002-04-11 | Nat Science Council | Formation method of metal tip electrode field emission structure |
GB2372146B (en) * | 2001-02-09 | 2003-03-26 | Leica Microsys Lithography Ltd | Cathode |
US20050109533A1 (en) * | 2002-08-27 | 2005-05-26 | Fujitsu Limited | Circuit board and manufacturing method thereof that can easily provide insulating film between projecting electrodes |
US6686250B1 (en) | 2002-11-20 | 2004-02-03 | Maxim Integrated Products, Inc. | Method of forming self-aligned bipolar transistor |
US7317278B2 (en) * | 2003-01-31 | 2008-01-08 | Cabot Microelectronics Corporation | Method of operating and process for fabricating an electron source |
JP4112449B2 (en) * | 2003-07-28 | 2008-07-02 | 株式会社東芝 | Discharge electrode and discharge lamp |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4168213A (en) * | 1976-04-29 | 1979-09-18 | U.S. Philips Corporation | Field emission device and method of forming same |
US4943343A (en) * | 1989-08-14 | 1990-07-24 | Zaher Bardai | Self-aligned gate process for fabricating field emitter arrays |
US4964946A (en) * | 1990-02-02 | 1990-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for fabricating self-aligned field emitter arrays |
US5186670A (en) * | 1992-03-02 | 1993-02-16 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5199917A (en) * | 1991-12-09 | 1993-04-06 | Cornell Research Foundation, Inc. | Silicon tip field emission cathode arrays and fabrication thereof |
-
1994
- 1994-08-05 GB GB9415892A patent/GB9415892D0/en active Pending
-
1995
- 1995-07-25 DE DE69511877T patent/DE69511877T2/en not_active Expired - Fee Related
- 1995-07-25 JP JP8506293A patent/JPH10503877A/en active Pending
- 1995-07-25 EP EP95926455A patent/EP0774159B1/en not_active Expired - Lifetime
- 1995-07-25 WO PCT/GB1995/001760 patent/WO1996004674A2/en active IP Right Grant
- 1995-07-25 US US08/776,540 patent/US5818153A/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4168213A (en) * | 1976-04-29 | 1979-09-18 | U.S. Philips Corporation | Field emission device and method of forming same |
US4943343A (en) * | 1989-08-14 | 1990-07-24 | Zaher Bardai | Self-aligned gate process for fabricating field emitter arrays |
US4964946A (en) * | 1990-02-02 | 1990-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for fabricating self-aligned field emitter arrays |
US5199917A (en) * | 1991-12-09 | 1993-04-06 | Cornell Research Foundation, Inc. | Silicon tip field emission cathode arrays and fabrication thereof |
US5186670A (en) * | 1992-03-02 | 1993-02-16 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
Non-Patent Citations (2)
Title |
---|
TRUJILLO J T ET AL: "FABRICATION OF GATED SILICON FIELD-EMISSION CATHODES FOR VACUUM MICROELECTRONICS AND ELECTRON-BEAM APPLICATIONS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, vol. 11, no. 2, 1 March 1993 (1993-03-01), pages 454 - 458, XP000364848 * |
Z LISA ZHANG ET AL: "INTEGRATED SILICON PROCESS FOR MICRODYNAMIC VACUUM FIELD EMISSION CATHODES", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, vol. 11, no. 6, 1 November 1993 (1993-11-01), pages 2538 - 2543, XP000423378 * |
Also Published As
Publication number | Publication date |
---|---|
DE69511877D1 (en) | 1999-10-07 |
EP0774159B1 (en) | 1999-09-01 |
JPH10503877A (en) | 1998-04-07 |
EP0774159A2 (en) | 1997-05-21 |
GB9415892D0 (en) | 1994-09-28 |
US5818153A (en) | 1998-10-06 |
WO1996004674A2 (en) | 1996-02-15 |
DE69511877T2 (en) | 2000-06-08 |
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