WO1995004845A1 - Crystalline multilayer structure and manufacturing method thereof - Google Patents
Crystalline multilayer structure and manufacturing method thereof Download PDFInfo
- Publication number
- WO1995004845A1 WO1995004845A1 PCT/PL1994/000008 PL9400008W WO9504845A1 WO 1995004845 A1 WO1995004845 A1 WO 1995004845A1 PL 9400008 W PL9400008 W PL 9400008W WO 9504845 A1 WO9504845 A1 WO 9504845A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- temperature
- layer
- group iii
- crystal
- invention according
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Definitions
- This invention relates to a process of manufacturing crystalline structure and more specifically to crystalline multilayer structures based on nitrides of group III metals, and manufacturing method thereof.
- Gallium nitride “GaN,” Aluminum nitride “A1N” and Indium nitride “InN” are known as semiconductor compounds of large direct energy gaps. As such they are important electronic materials.
- A1N in the form of ceramic substrate, is applied in high power electronic applications, because of its high heat conductivity, thermal expansion co-efficient close to that of silicon, and good stability at high temperatures.
- GaN has potentially the best useful properties as a semiconductor device. Specifically, GaN has semiconducting properties for temperatures up to 600°C as compared to silicon semiconductor with temperature stability of up to 120°C. The temperature stability and large energy gap of GaN can provide many new high temperature applications for electronic products.
- a second important characteristic is that a GaN p-n junction light emitting diode ("LED* 1 ) emits visible blue light with a wavelength of approximately 330nm.
- the other semiconductors which are known to emit light in that band are silicon carbide (Sic) and generally A ⁇ B I semiconductors such as ZnSe and CdF 2 .
- GaN and other group III metal nitrides are viable candidates for applications in short wavelength optoelectronics, blue laser systems, and full color display systems.
- Present optoelectronic applications, such as fiber optic transmission and isolation, use light with wavelengths between 660nm to l ⁇ m, which corresponds to a frequency range of 300 to 450 GHz.
- Blue light from GaN has a wavelength of 330nm with a frequency of about 909GHz. Hence the bandwidth for optical communication could be doubled or tripled by using GaN LED's.
- nitrides of group III metals including GaN have not been used extensively because of the many difficulties involved in growing such nitrides in bulk crystals.
- Their thermodynamic properties preclude the standard techniques for the growth of bulk single crystals, appropriate for commercial use.
- the high melting temperature and high N 2 pressure at melting, of GaN is in the range where the compound is unstable and readily dissociates. Due to the high melting temperature, the substrate crystals of GaN cannot be obtained by typical crystal growing methods like Czochralski or Bridgman growth from the stoichiometric melts.
- nitrides to develop crystalline nitrides.
- group III metals like gallium nitride, aluminum nitride, indium nitride or their alloys are deposited on crystalline substrates of different chemical compositions like sapphire or silicon carbide, by Molecular Beam Epitaxy ("MBE”) or Metal Organic Chemical Vapor Deposition (“MOCVD”) .
- MBE Molecular Beam Epitaxy
- MOCVD Metal Organic Chemical Vapor Deposition
- atoms of group III metals like gallium and atoms of nitrogen are deposited on a single crystalline substrate by causing them to collide with the substrate.
- gallium atoms are provided by vaporizing liquid gallium at 1800*C.
- Nitrogen atoms are generated from a flow of molecular nitrogen exposed to plasma causing its molecules to dissociate. It is also possible to apply accelerated positive ions by using an electric field for the acceleration to dissociate the nitrogen molecules.
- gallium nitride is deposited on a sapphire substrate, by simultaneously applying two chemical reactions: first, decomposing ammonia and second decomposing a metalorganic compound, like trimethylgallium, which is a suitable carrier of gallium.
- a metalorganic compound like trimethylgallium, which is a suitable carrier of gallium.
- Gallium obtained from the decomposition of the metalorganic compound and the nitrogen derived from ammonia are deposited on the surface of a sapphire substrate and as a result create a two layer structure.
- aluminum nitride deposited on a sapphire substrate has been produced by using rimethy1aluminum as a source of aluminum.
- gallium nitride crystal is disclosed in the Polish Patent No. 127099.
- the patent discloses a procedure for crystallization of gallium nitride from a gas phase by sublimation and condensation process under high nitrogen pressure. Specifically, according to the disclosed method gallium nitride powder sublimates at temperatures exceeding 1000*C, at nitrogen pressure higher than lOOObar. Thereafter, gallium nitride condensation occurs on a sapphire substrate. The temperature difference between the starting material and the substrate would not exceed 500*C.
- the procedures disclosed in prior art are therefore mainly limited to the growing of GaN crystal or other group III metal nitride crystals, on a different substrate. Such growth procedures are known as heteroepitaxy production.
- the gallium nitride structures obtained by such known heteroepitaxy procedures are of low crystalline quality.
- rocking curve Their half width at half maximum of the X-ray double crystal reflection curve, known as the rocking curve, is not lower than 200 arcsec, which is not satisfactory for many applications.
- GaN Another difficulty with GaN is its failure to maintain a chemical balance or stoichiometry.
- Gallium nitride is not stoichiometric because of the high propensity for nitrogen atoms to leave gallium nitride crystals. Therefore, stoichiometric nitrides free of nitrogen vacancies are difficult to obtain. It is commonly believed that the high concentration of nitrogen vacancies is the source of numerous native donor states which are responsible for high free electron concentration observed in group Ill-nitride semiconductors.
- One object of the present invention is to fabricate a crystalline multilayer gallium nitride structure.
- Another object of the invention is to fabricate multi ⁇ layer crystals based on nitrides of group III metals or their alloys.
- Yet a further object of the invention is to obtain gallium nitride crystals with satisfactory growth and quality which can be used in optoelectronics and high temperature electronics.
- a further object of the invention is to deposit different layers of gallium nitride upon a gallium nitride substrate.
- Another object of the invention is to produce P type gallium nitride layer to ultimately produce GaN p-n junctions.
- a method for fabricating a group III metal nitride crystal by homoepitaxial growth For example in order to achieve a GaN crystal growth, a first layer is grown by melting gallium at a temperature Tl in the range of 400-2000*C and exposing the gallium solution to high nitrogen pressure. Instead of nitrogen a mixture of gases containing nitrogen may also be used to obtain a first crystalline layer during a period of about 1 hour. Then the pressure of nitrogen or nitrogen mixture is decreased and a second layer grows at temperature T2 not higher than Tl until the second layer of a desired thickness is obtained. The decrease in pressure is such that the growth rate of the second layer is significantly slower than the growth rate of the first layer.
- the thickness of the second layer is much less than the thickness of the first layer.
- a decrease of pressure of about 200 bars or more is usually sufficient to allow the growth of a second layer with better crystalline quality than the first layer.
- the second layer has better surface flatness, and lower concentration of N- vacancies than the first layer.
- the resulting crystalline structure is of such quality that allows the attainment of highly desired industrial applications mentioned above.
- the width of x-ray rocking curve of the second layer is about 20 arcsec and the difference between the width of rocking curves for first and second layers is about 10 arcsec.
- the x-ray rocking curve indicates an improvement by a factor of 10, over prior art crystalline structures.
- the first layer of GaN once the first layer of GaN is formed, its position is changed. Meanwhile, the pressure of nitrogen is decreased.
- the first layer is then subjected to thermal or chemical treatment at temperatures higher than 300 ⁇ C and, finally, its surface is covered by atoms of gallium metals present in the atmosphere or present in the flow of nitrogen gas.
- the atoms of gallium metals can emanate from vapors, beam of atoms, metal compounds containing gallium or metalorganic compounds containing gallium metal. Consequently a second layer of
- GaN crystal deposits on a previous layer of GaN crystal at a significantly slower growth rate than the growth rate of the previous layer.
- next layers may be deposited by known methods in the art like chemical vapor deposition, molecular beam epitaxy or plasma phase epitaxy.
- Fig. 1 illustrates a high pressure system used to develop group III metal nitride crystals according to one embodiment of the present invention.
- Fig. 2 illustrates the high pressure system used to develop the crystals according to another embodiment of the present invention.
- Figs. 3a-3c illustrate the pressure-temperature curves for GaN, A1N and InN respectively.
- Fig. 4 represents the dependence of temperature, T, as a function of position X in a sample of liquid gallium during the crystallization of the first layer.
- Fig. 5 illustrates the sample of liquid gallium during the crystallization of the first layer.
- Fig. 6 illustrates the concentration of nitrogen N, as a function of position X in the sample of liquid gallium during the crystallization of the first layer.
- Fig. 7 represents the dependence of temperature, T, as a function of position X in the sample of liquid gallium during the crystallization of the second layer.
- Fig. 8 illustrates the sample of liquid gallium during the crystallization of the second layer.
- Fig. 9 illustrates the concentration of nitrogen N, as a function of position X in a sample of liquid gallium during the crystallization of the second layer.
- Fig. 1 illustrates a high pressure chamber 10 used to fabricate group III metal nitride crystals of the present invention.
- III metals or their alloys is placed in a three zone furnace 14, designed for work at high gas pressures of up to 20 kbar.
- the furnace 14 with the crucible 12 is placed in the high pressure chamber 10.
- the furnace 14, consists of three temperature zones 16, 18 and 20 supplied by electric currents of different values.
- the desired pressure is provided by adjusting the input pressure to chamber 10 by connecting a gas compressor (not shown) to the chamber through a high pressure inlet 22 and a vacuum outlet 24.
- a multi-layer group III nitride crystal is made in chamber 10.
- group III metal alloys can also be used to attain a crystalline growth.
- Group III metal alloys are any combination of group III metals that result in a crystalline growth.
- III-N compounds are fully miscible, where III is a group III metal and N is nitrogen, many combinations of such group III metals can be used to grow crystalline layers according to the present invention.
- a sample 26 of a metal from group III of the periodic table or group III metal alloy as defined above is placed in crucible 12. Thereafter the crucible is placed in the three zone furnace 14. The furnace with the crucible is then placed in the high pressure chamber 10. The crucible is placed near zone 16 with temperature T d , and zone 18 with higher temperature T such that the furnace causes a temperature gradient in the metal sample.
- the chamber is filled with nitrogen gas or a gas mixture containing a certain percentage of nitrogen. The metal sample is thus exposed to a pressure of nitrogen or partial nitrogen pressure. Temperatures T d and T g are both above the metal's melting point and the nitrogen pressure is such that the metal sample remains in the form of a liquid solution.
- the pressure of nitrogen is high enough to maintain GaN stability for the entire metal sample solution which is exposed to heat zones 16 and 18.
- the first crystal layer is grown for a period of about 5 hours. The growth period is discretionary and depends on the desired thickness and mechanical strength of the crystalline layer. Typically a first layer with a thickness of few millimeters is appropriate for many applications.
- the pressure of the nitrogen or partial nitrogen pressure in the mixture is decreased by about 200 bars or more.
- the portion of the sample exposed to the warmer zone 18 with temperature T comes out of GaN stability range and liquid phase metal contacts directly with gaseous nitrogen, while the portion of the solution exposed to the cooler zone 16 with temperature T d remains in GaN stability range.
- the second crystal layer grows at temperature T d at a significantly slower growth rate than the first layer until the second layer of a desired thickness is obtained.
- the thickness of the second layer is less than the thickness of the first layer and is typically around micron. Therefore, although the growth rate of the second layer is much less than the growth rate of the first layer, the growth period necessary to grow a second layer with a desired thickness is comparable with and in some instances less than the growth period of the first layer.
- the first crystalline layer is moved to zone 20 with temperature T t , which is lower than both T d and T g . Thereafter the first crystalline layer is subjected to a chemical or thermal treatment. At lower pressure of nitrogen, the metal solution in crucible 12 turns into vapor phase and begins to evaporate towards zone 20 and in combination with nitrogen flow causes the growth of a second layer 28 in zone 20 over the first layer.
- the atoms of group III metals can be obtained from vapors, beam of atoms or compounds of these metals or from decomposition of metalorganic compound in atmosphere or flow of nitrogen or gases containing nitrogen.
- the temperatures T g and T d at which the metal is first heated are in the range of 400 - 2000 °C at a specified pressure of nitrogen.
- the necessary pressure of nitrogen can be determined based on the pressure-temperature curve of the group III metal nitride.
- Fig. 3(a) illustrates the pressure-temperature curve of GaN.
- Fig. 3(b) illustrates the pressure-temperature curve of A1N
- Fig. 3(c) illustrates the pressure temperature curve of InN.
- the pressure-temperature curves illustrate the minimum required pressure of N 2 at different temperatures, under which the compound remains within a stability range. As illustrated, the higher the temperature of the nitride compound, the higher the pressure required to maintain the stability condition. Therefore, the area to the left of the curves represents pressure and temperature conditions under which no metal nitride stability is achieved and the area to the right of the curves represents metal nitride stability conditions.
- the desired pressure of N 2 at a specified temperature T is higher than the equilibrium pressure P N2 (T) , according to the equilibrium state as illustrated by the pressure-temperature curve of Fig. 3(a). Furthermore, the desired pressure of N 2 is preferably lower than three times the equilibrium pressure P H2eq (T) . At higher pressures the quality of the obtained crystal begins to deteriorate.
- the gas provided in the chamber is not pure nitrogen and only partially contains nitrogen, the minimum nitrogen content in the gas mixture is preferably about 20% or more.
- the pressure of gas is in the range of 200 bar to 10 kbar. This pressure range prevents Al evaporation and gas phase reaction, as illustrated by the pressure- temperature curve of Fig. 3(b). In the event that the gas provided in the chamber only partially contains nitrogen, the minimum nitrogen content in the gas mixture is about 1% or more.
- the desired pressure decrease necessary for growing the second layer with a sufficiently slow growth rate to develop a high quality crystal layer is about 6.4kbars.
- the temperature change is adjusted to decrease the growth rate of the second layer with high quality characteristics. Therefore, during pure nitrogen growth of A1N crystal the first layer is grown at pressures of 6.5kbar or more, and the second layer is grown at a low pressure of O.lkbar and less.
- the desired pressure of N 2 — similar to GaN — is higher than the equilibrium pressure P N2eq (T) , according to the equilibrium state as illustrated by the desired pressure-temperature curve of Fig. 3(c). Furthermore, the pressure of N 2 is preferably lower than three times the equilibrium pressure. At higher pressures the obtained crystal begins to deteriorate.
- the generation of nitrogen vacancies in the substrate is avoided due to the pressure growth technique disclosed herein.
- the concentration of free electrons in pressure grown crystals depends on growth temperature but also on the growth rate of the crystal. In the crystals growing slower, this concentration can be substantially reduced.
- doping of the first and the second layer is achieved by the addition of small amounts, of around 10%, of other metals or non-metals to the metal sample 26, in order to introduce impurities in the growing crystalline layers.
- impurities include Zn, Mg, Cd, Si or P.
- An example of a resulting crystalline layer is a ternary system III - X - N, where III is a group III metal, X is an impurity and N is nitrogen, with a solidus which contains only one solid phase, that is, the nitride doped with the impurity X up to 1 at.%.
- Group III metal alloys for growing GaN crystalline structure may contain any combination of In, Al, Si, Mg, Zn, Ce, Bi, and P.
- N-vacanies content For obtaining p-type conductivity it is necessary to reduce N-vacanies content. This is achieved by either crystallization of the second layer from the vapor phase described above at high N 2 pressure, or by annealing an n- type crystal doped with acceptors like Mg or Zn, at temperatures higher than 1500°C at high N 2 pressures.
- Fig. illustrates the temperature T as a function of position X in the sample of liquid gallium in crucible 12 during the crystallization process of the first layer. Temperature T d of zone 16 is maintained at 1350°C and temperature T of zone 18 is maintained at 1410°C. Under pressure p-, the equilibrium temperature T r is greater than both temperatures T d and T g .
- Fig. 5 illustrates crucible 12 with 2cm 3 gallium sample 26 shown in liquid form.
- Fig. 6 illustrates the concentration of nitrogen N, as a function of position X in the sample of liquid gallium during the crystallization process of the first layer. As illustrated, the concentration of nitrogen in the liquid gallium sample increases with the increasing temperature.
- the process is carried out at conditions where GaN is stable in the entire temperature range. Therefore, the highest temperature of the sample, 1410°C, does not exceed the equilibrium temperature (Tr) for coexistence of three phases GaN, liquid Ga and N 2 gas, corresponding to the nitrogen pressure of 10 kbar. In these conditions the surface of the liquid gallium begins to be covered by a thin GaN crystalline layer. Due to the temperature gradient in the system, nitrogen dissolved in the warmer part of the crucible is transported, by diffusion and convection, to the cooler part where GaN crystals in the form of single crystalline hexagonal platelet grow from the supersaturated solution as a first substrate layer. In an 8 hour process the crystal reaches the dimensions of 0.5 x 2 x 2mm.
- the next step according to the present invention is the homoepitaxial growth of a second crystalline layer at a growth rate slower than the growth rate of the first layer, in a lower supersaturation controlled by the change of pressure and temperature of the process.
- the pressure in the system is decreased by 1000 bar which changes the distribution of concentration of nitrogen in the liquid gallium 26 of figure 8, based on the curve illustrated in Fig. 9.
- the equilibrium temperature for pressure of 9000 bar is between the temperatures of the warmer and the cooler parts of the crucible as illustrated by Fig. 7. Under this condition, as illustrated by Fig. 9, in the warmer part of the crucible, gallium nitride is not stable and the liquid phase gallium has a direct contact with gaseous phase nitrogen.
- the solubility of the gas in Ga in contrast to the solubility of GaN, is a decreasing function of temperature.
- the solubility of nitrogen in Ga also decreases.
- the change in temperature dependence of nitrogen concentration in the solution leads to the lowering of the supersaturation in the growth region of the solution.
- the average growth rate of the layer is of order of 10 "3 mm/h.
- the width of the rocking curve for the layer deposited on GaN crystal is typically 20-24 arcsec. The lowering of the supersaturation and the slower growth rate provides for the growth of a better quality crystal.
- the part of the gallium sample with temperature T g above the equilibrium temperature T r is not covered by the GaN surface crust.
- the second layer grown at these conditions has better qualities than the first substrate layer. It can be appreciated by those skilled in the art that the decrease of pressure in the second step should be such that the equilibrium temperature remains between the temperatures of zone 16 and 18 of the furnace. Otherwise, no stable region in the sample remains and the GaN crystal can readily decompose.
- Example 2 Fig. 2 illustrates the second embodiment of the invention.
- the process of growth of the first gallium nitride layer, which is the substrate crystal in the form of the hexagonal plate, is carried out as explained above in reference to Fig. 1, at a nitrogen pressure of approximately 10 kbar, in a temperature gradient provided by zones 16 and 18, during an 8 hour crystallization process, until GaN crystal with dimensions of 0.5 x 2 x 2mm is obtained.
- the crystal is displaced to temperature zone 20 in the furnace, where its temperature is approximately 1250*C. Simultaneously, the pressure of nitrogen is decreased by 2000 bar.
- the substrate crystal is thermodynamically stable, whereas the liquid gallium evaporates easily.
- Fig. 1 illustrates the second embodiment of the invention.
- the temperature 1410 ⁇ C at zone 18 is higher than the equilibrium temperature necessary for GaN stability at 8000 bar. Then, Ga vapors are transported by convection towards the substrate and deposited on it, reacting with nitrogen to form the second layer of GaN. Since the second layer is grown in N 2 -rich side of the phase diagram, the resulting crystal has low concentration of N- vacancies.
- the new decreased pressure be high enough to prevent decomposition of GaN substrate, yet be low enough to allow sufficient evaporation of the gallium liquid. Consequently, if the growth of the second layer is performed at low temperatures, for example, lower than 900- 1000°C, the pressure can be decreased to even less than 1 bar, since at low temperatures GaN remains in a metastable state.
- Ga 098 In 002 N was grown from the solution containing 90 at.% Ga and 10 at.% In, at N 2 pressure of lOkbar in a temperature range of 1200°C to 1300°C.
- the two layer structure is fabricated according to the present invention, it is possible to add more layers by CVD or MBE processes. This enables growth of multilayer structures such as superlattices and heterostructures.
- the present invention teaches a method to fabricate multi-layer crystals of group III metal nitrides, while avoiding the disadvantages of prior art fabrication methods.
- the homoepitaxy growth of the present invention provides a good quality crystal with many potential applica ⁇ tions in optoelectronics and high temperature electronics.
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94913850A EP0713542B1 (en) | 1993-08-10 | 1994-04-27 | Crystalline multilayer structure and manufacturing method thereof |
DE69425328T DE69425328T2 (en) | 1993-08-10 | 1994-04-27 | CRYSTALLINE MULTI-LAYERED STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF |
CA002168871A CA2168871C (en) | 1993-08-10 | 1994-04-27 | Crystalline multilayer structure and manufacturing method thereof |
US08/591,595 US5637531A (en) | 1993-08-10 | 1994-04-27 | Method of making a crystalline multilayer structure at two pressures the second one lower than first |
DK94913850T DK0713542T3 (en) | 1993-08-10 | 1994-04-27 | Crystalline multilayer structure and process for its preparation |
JP50636195A JP3373853B2 (en) | 1993-08-10 | 1994-04-27 | Multilayer crystal structure and method of manufacturing the same |
AT94913850T ATE194859T1 (en) | 1993-08-10 | 1994-04-27 | CRYSTALLINE MULTI-LAYER STRUCTURE AND METHOD FOR PRODUCING SAME |
AU65848/94A AU6584894A (en) | 1993-08-10 | 1994-04-27 | Crystalline multilayer structure and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PLP.300019 | 1993-08-10 | ||
PL93300019A PL173917B1 (en) | 1993-08-10 | 1993-08-10 | Method of obtaining a crystalline lamellar structure |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995004845A1 true WO1995004845A1 (en) | 1995-02-16 |
Family
ID=20060668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/PL1994/000008 WO1995004845A1 (en) | 1993-08-10 | 1994-04-27 | Crystalline multilayer structure and manufacturing method thereof |
Country Status (11)
Country | Link |
---|---|
US (1) | US5637531A (en) |
EP (1) | EP0713542B1 (en) |
JP (1) | JP3373853B2 (en) |
AT (1) | ATE194859T1 (en) |
AU (1) | AU6584894A (en) |
CA (1) | CA2168871C (en) |
DE (1) | DE69425328T2 (en) |
DK (1) | DK0713542T3 (en) |
ES (1) | ES2148326T3 (en) |
PL (1) | PL173917B1 (en) |
WO (1) | WO1995004845A1 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997013891A1 (en) * | 1995-10-13 | 1997-04-17 | Centrum Badan Wysokocisnieniowych | METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
WO1998055671A1 (en) * | 1997-06-05 | 1998-12-10 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS |
WO1998056046A1 (en) * | 1997-06-06 | 1998-12-10 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A3B5 OF p- AND n-TYPE ELECTRIC CONDUCTIVITY |
EP1065299A2 (en) * | 1999-06-30 | 2001-01-03 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor growth method and vapor phase growth apparatus |
US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
SG91277A1 (en) * | 2000-05-12 | 2002-09-17 | Juses Chao | Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor |
US6806508B2 (en) | 2001-04-20 | 2004-10-19 | General Electic Company | Homoepitaxial gallium nitride based photodetector and method of producing |
US6949140B2 (en) | 2001-12-05 | 2005-09-27 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
US7001457B2 (en) | 2001-05-01 | 2006-02-21 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
JP2006509710A (en) * | 2002-12-11 | 2006-03-23 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Epitaxy substrate and manufacturing method thereof |
DE102004048454A1 (en) * | 2004-10-05 | 2006-04-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the preparation of Group III nitride bulk crystals or crystal layers from molten metal |
US7361220B2 (en) | 2003-03-26 | 2008-04-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
JP2008260682A (en) * | 1996-06-25 | 2008-10-30 | Sumitomo Electric Ind Ltd | Semiconductor element |
US7871843B2 (en) | 2002-05-17 | 2011-01-18 | Ammono. Sp. z o.o. | Method of preparing light emitting device |
US7883645B2 (en) | 2004-10-05 | 2011-02-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements |
US8398767B2 (en) | 2004-06-11 | 2013-03-19 | Ammono S.A. | Bulk mono-crystalline gallium-containing nitride and its application |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2872096B2 (en) * | 1996-01-19 | 1999-03-17 | 日本電気株式会社 | Vapor phase growth method of low resistance p-type gallium nitride based compound semiconductor |
JP3721674B2 (en) * | 1996-12-05 | 2005-11-30 | ソニー株式会社 | Method for producing nitride III-V compound semiconductor substrate |
DE19652548C1 (en) * | 1996-12-17 | 1998-03-12 | Siemens Ag | Continuous epitaxy of nitrogen-containing semiconductor layers |
GB2323209A (en) * | 1997-03-13 | 1998-09-16 | Sharp Kk | Molecular beam epitaxy apparatus and method |
US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
WO1999034037A1 (en) * | 1997-12-25 | 1999-07-08 | Japan Energy Corporation | Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors |
JPH11209199A (en) * | 1998-01-26 | 1999-08-03 | Sumitomo Electric Ind Ltd | Synthesis method of gallium nitride single crystal |
JP5348123B2 (en) * | 1999-06-09 | 2013-11-20 | 株式会社リコー | Crystal manufacturing equipment |
JP3438674B2 (en) * | 1999-10-21 | 2003-08-18 | 松下電器産業株式会社 | Method for manufacturing nitride semiconductor device |
US7615780B2 (en) * | 2000-10-23 | 2009-11-10 | General Electric Company | DNA biosensor and methods for making and using the same |
US7102158B2 (en) * | 2000-10-23 | 2006-09-05 | General Electric Company | Light-based system for detecting analytes |
KR100831751B1 (en) | 2000-11-30 | 2008-05-23 | 노쓰 캐롤라이나 스테이트 유니버시티 | Methods and apparatus for producing ?'? based materials |
US6787010B2 (en) | 2000-11-30 | 2004-09-07 | North Carolina State University | Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
TWI277666B (en) * | 2001-06-06 | 2007-04-01 | Ammono Sp Zoo | Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride |
US6902619B2 (en) * | 2001-06-28 | 2005-06-07 | Ntu Ventures Pte. Ltd. | Liquid phase epitaxy |
JP2003059835A (en) * | 2001-08-13 | 2003-02-28 | Sony Corp | Method for growing nitride semiconductor |
JP3910047B2 (en) * | 2001-11-20 | 2007-04-25 | 松下電器産業株式会社 | Semiconductor memory device |
US7220311B2 (en) * | 2002-11-08 | 2007-05-22 | Ricoh Company, Ltd. | Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride |
US20070040181A1 (en) * | 2002-12-27 | 2007-02-22 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
US20060169996A1 (en) * | 2002-12-27 | 2006-08-03 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
US7859008B2 (en) * | 2002-12-27 | 2010-12-28 | Momentive Performance Materials Inc. | Crystalline composition, wafer, device, and associated method |
US8089097B2 (en) * | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
US7786503B2 (en) * | 2002-12-27 | 2010-08-31 | Momentive Performance Materials Inc. | Gallium nitride crystals and wafers and method of making |
US7098487B2 (en) | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
US8357945B2 (en) * | 2002-12-27 | 2013-01-22 | Momentive Performance Materials Inc. | Gallium nitride crystal and method of making same |
US9279193B2 (en) | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
AU2003299899A1 (en) | 2002-12-27 | 2004-07-29 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
US7638815B2 (en) * | 2002-12-27 | 2009-12-29 | Momentive Performance Materials Inc. | Crystalline composition, wafer, and semi-conductor structure |
US7288152B2 (en) * | 2003-08-29 | 2007-10-30 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same |
US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
US7118813B2 (en) * | 2003-11-14 | 2006-10-10 | Cree, Inc. | Vicinal gallium nitride substrate for high quality homoepitaxy |
WO2005064661A1 (en) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Industrial Co., Ltd. | Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
US7381268B2 (en) * | 2004-04-27 | 2008-06-03 | Matsushita Electric Industrial Co., Ltd. | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
WO2005122691A2 (en) * | 2004-06-16 | 2005-12-29 | Mosaic Crystals Ltd. | Crystal growth method and apparatus |
PL371405A1 (en) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Method for manufacture of volumetric monocrystals by their growth on crystal nucleus |
DE102005021099A1 (en) * | 2005-05-06 | 2006-12-07 | Universität Ulm | GaN layers |
US7884447B2 (en) * | 2005-07-11 | 2011-02-08 | Cree, Inc. | Laser diode orientation on mis-cut substrates |
JP2007059850A (en) * | 2005-08-26 | 2007-03-08 | Ngk Insulators Ltd | Substrate for depositing group iii nitride, manufacturing method thereof, and semiconductor device using the same |
US8425858B2 (en) * | 2005-10-14 | 2013-04-23 | Morpho Detection, Inc. | Detection apparatus and associated method |
US20070086916A1 (en) * | 2005-10-14 | 2007-04-19 | General Electric Company | Faceted structure, article, sensor device, and method |
KR20070095603A (en) * | 2006-03-22 | 2007-10-01 | 삼성코닝 주식회사 | Zn ion implanting method of nitride semiconductor |
JP2008071947A (en) * | 2006-09-14 | 2008-03-27 | Rohm Co Ltd | Manufacturing method of semiconductor element |
JP4760652B2 (en) * | 2006-10-03 | 2011-08-31 | 三菱化学株式会社 | Method for producing Ga-containing nitride crystal and method for producing semiconductor device using the same |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
WO2011075461A1 (en) * | 2009-12-18 | 2011-06-23 | First Solar, Inc. | Photovoltaic device back contact |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110215348A1 (en) * | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
PL224995B1 (en) * | 2010-04-06 | 2017-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Substrate for epitaxial growth |
RU2013108775A (en) * | 2010-07-28 | 2014-09-10 | Моментив Перформанс Матириалз Инк. | DEVICE FOR PROCESSING MATERIALS AT HIGH TEMPERATURES AND PRESSURES |
JP2012158481A (en) * | 2011-01-29 | 2012-08-23 | Soraa Inc | Large-scale facility and method for producing gallium nitride boule by ammonothermal process |
CN116536758B (en) * | 2023-05-04 | 2024-01-23 | 山东晶升电子科技有限公司 | Equipment and method for epitaxial growth of gallium nitride crystal by high-pressure fluxing agent |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2313976A1 (en) * | 1975-06-13 | 1977-01-07 | Labo Electronique Physique | PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS |
EP0371771A2 (en) * | 1988-11-29 | 1990-06-06 | Alcan International Limited | Process for preparing aluminium nitride and aluminium nitride so produced |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3829556A (en) * | 1972-03-24 | 1974-08-13 | Bell Telephone Labor Inc | Growth of gallium nitride crystals |
CA1071068A (en) * | 1975-03-19 | 1980-02-05 | Guy-Michel Jacob | Method of manufacturing single crystals by growth from the vapour phase |
US5030583A (en) * | 1988-12-02 | 1991-07-09 | Advanced Technolgy Materials, Inc. | Method of making single crystal semiconductor substrate articles and semiconductor device |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
JP3352712B2 (en) * | 1991-12-18 | 2002-12-03 | 浩 天野 | Gallium nitride based semiconductor device and method of manufacturing the same |
-
1993
- 1993-08-10 PL PL93300019A patent/PL173917B1/en not_active IP Right Cessation
-
1994
- 1994-04-27 JP JP50636195A patent/JP3373853B2/en not_active Expired - Fee Related
- 1994-04-27 CA CA002168871A patent/CA2168871C/en not_active Expired - Fee Related
- 1994-04-27 DK DK94913850T patent/DK0713542T3/en active
- 1994-04-27 EP EP94913850A patent/EP0713542B1/en not_active Expired - Lifetime
- 1994-04-27 US US08/591,595 patent/US5637531A/en not_active Expired - Lifetime
- 1994-04-27 AT AT94913850T patent/ATE194859T1/en not_active IP Right Cessation
- 1994-04-27 AU AU65848/94A patent/AU6584894A/en not_active Abandoned
- 1994-04-27 ES ES94913850T patent/ES2148326T3/en not_active Expired - Lifetime
- 1994-04-27 WO PCT/PL1994/000008 patent/WO1995004845A1/en active IP Right Grant
- 1994-04-27 DE DE69425328T patent/DE69425328T2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2313976A1 (en) * | 1975-06-13 | 1977-01-07 | Labo Electronique Physique | PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS |
EP0371771A2 (en) * | 1988-11-29 | 1990-06-06 | Alcan International Limited | Process for preparing aluminium nitride and aluminium nitride so produced |
Non-Patent Citations (1)
Title |
---|
ELWELL ET AL: "crystal growth of GaN by the reaction between gallium and ammonia.", JOURNAL OF CRYSTAL GROWTH., vol. 66, no. 1, January 1984 (1984-01-01), AMSTERDAM NL, pages 45 - 54 * |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997013891A1 (en) * | 1995-10-13 | 1997-04-17 | Centrum Badan Wysokocisnieniowych | METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
JP2008260682A (en) * | 1996-06-25 | 2008-10-30 | Sumitomo Electric Ind Ltd | Semiconductor element |
US6273948B1 (en) | 1997-06-05 | 2001-08-14 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | Method of fabrication of highly resistive GaN bulk crystals |
WO1998055671A1 (en) * | 1997-06-05 | 1998-12-10 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS |
JP2002503394A (en) * | 1997-06-06 | 2002-01-29 | ツェントルム バダニ ヴィソコチシニエニオヴィフ ポルスキエイ アカデミイ ナウク | Method for producing p-type and n-type electrically conductive semiconductor nitrogen compounds A (bottom 3) B (bottom 5) |
WO1998056046A1 (en) * | 1997-06-06 | 1998-12-10 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A3B5 OF p- AND n-TYPE ELECTRIC CONDUCTIVITY |
US6329215B1 (en) | 1997-06-06 | 2001-12-11 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Navk | Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity |
EP1065299A2 (en) * | 1999-06-30 | 2001-01-03 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor growth method and vapor phase growth apparatus |
EP1065299A3 (en) * | 1999-06-30 | 2006-02-15 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor growth method and vapor phase growth apparatus |
US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
SG91277A1 (en) * | 2000-05-12 | 2002-09-17 | Juses Chao | Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor |
US6806508B2 (en) | 2001-04-20 | 2004-10-19 | General Electic Company | Homoepitaxial gallium nitride based photodetector and method of producing |
US7291544B2 (en) | 2001-04-20 | 2007-11-06 | General Electric Company | Homoepitaxial gallium nitride based photodetector and method of producing |
US7001457B2 (en) | 2001-05-01 | 2006-02-21 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
US8623138B2 (en) | 2001-05-01 | 2014-01-07 | Ricoh Company, Ltd. | Crystal growth apparatus |
US7531038B2 (en) | 2001-05-01 | 2009-05-12 | Ricoh Company, Ltd. | Crystal growth method |
US6949140B2 (en) | 2001-12-05 | 2005-09-27 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
US7871843B2 (en) | 2002-05-17 | 2011-01-18 | Ammono. Sp. z o.o. | Method of preparing light emitting device |
JP4860927B2 (en) * | 2002-12-11 | 2012-01-25 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Epitaxy substrate and manufacturing method thereof |
US8110848B2 (en) | 2002-12-11 | 2012-02-07 | Ammono Sp. Z O.O. | Substrate for epitaxy and method of preparing the same |
JP2006509710A (en) * | 2002-12-11 | 2006-03-23 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Epitaxy substrate and manufacturing method thereof |
US7361220B2 (en) | 2003-03-26 | 2008-04-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
US8398767B2 (en) | 2004-06-11 | 2013-03-19 | Ammono S.A. | Bulk mono-crystalline gallium-containing nitride and its application |
DE102004048454B4 (en) * | 2004-10-05 | 2008-02-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the preparation of Group III nitride bulk crystals or crystal layers from molten metal |
DE102004048454A1 (en) * | 2004-10-05 | 2006-04-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the preparation of Group III nitride bulk crystals or crystal layers from molten metal |
US7883645B2 (en) | 2004-10-05 | 2011-02-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements |
US8728233B2 (en) | 2004-10-05 | 2014-05-20 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Method for the production of group III nitride bulk crystals or crystal layers from fused metals |
Also Published As
Publication number | Publication date |
---|---|
CA2168871C (en) | 2004-05-25 |
DE69425328D1 (en) | 2000-08-24 |
ES2148326T3 (en) | 2000-10-16 |
US5637531A (en) | 1997-06-10 |
DE69425328T2 (en) | 2000-12-14 |
JP3373853B2 (en) | 2003-02-04 |
DK0713542T3 (en) | 2000-10-30 |
PL173917B1 (en) | 1998-05-29 |
JPH09512385A (en) | 1997-12-09 |
AU6584894A (en) | 1995-02-28 |
PL300019A1 (en) | 1995-02-20 |
EP0713542A1 (en) | 1996-05-29 |
ATE194859T1 (en) | 2000-08-15 |
EP0713542B1 (en) | 2000-07-19 |
CA2168871A1 (en) | 1995-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5637531A (en) | Method of making a crystalline multilayer structure at two pressures the second one lower than first | |
AU2004276541B2 (en) | Method of producing self-supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer | |
US7776153B2 (en) | Method and apparatus for producing large, single-crystals of aluminum nitride | |
US5530267A (en) | Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate | |
EP1977028B1 (en) | Process for growth of low dislocation density gan | |
US8030101B2 (en) | Process for producing an epitaxial layer of galium nitride | |
Porowski | Growth and properties of single crystalline GaN substrates and homoepitaxial layers | |
US7221037B2 (en) | Method of manufacturing group III nitride substrate and semiconductor device | |
EP0735598A2 (en) | Compound semiconductor light emitting device and method of preparing the same | |
EP1164210A2 (en) | A method of growing a semiconductor layer | |
US6648966B2 (en) | Wafer produced thereby, and associated methods and devices using the wafer | |
CA3025350A1 (en) | Group iiia nitride growth system and method | |
Porowski et al. | Growth of GaN single crystals under high nitrogen pressure | |
US6139629A (en) | Group III-nitride thin films grown using MBE and bismuth | |
WO1997013891A1 (en) | METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES | |
US6946370B2 (en) | Semiconductor crystal producing method | |
EP0333120B1 (en) | Method for producing semiconductive single crystal | |
Grzegory et al. | Recent results in the crystal growth of GaN at high N2 pressure | |
EP1883719A1 (en) | A bulk, free-standing cubic iii-n substrate and a method for forming same | |
WO2004019390A2 (en) | Mbe growth of an algan layer or algan multilayer structure | |
Porowski | High pressure crystallization of III-V nitrides | |
US4983249A (en) | Method for producing semiconductive single crystal | |
KR20030077435A (en) | Method of manufacturing III-V group compound semiconductor | |
US5204283A (en) | Method of growth II-VI semiconducting compounds | |
Krukowski | Thermodynamics and high-Pressure growth of (Al, Ga, In) N single crystals |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AT AU BB BG BR BY CA CH CN CZ DE DK ES FI GB HU JP KP KR KZ LK LU LV MG MN MW NL NO NZ PL PT RO RU SD SE SK UA US UZ VN |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1994913850 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2168871 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 08591595 Country of ref document: US |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 1994913850 Country of ref document: EP |
|
WWG | Wipo information: grant in national office |
Ref document number: 1994913850 Country of ref document: EP |