WO1992019037A1 - Universal input voltage power supply - Google Patents
Universal input voltage power supply Download PDFInfo
- Publication number
- WO1992019037A1 WO1992019037A1 PCT/US1992/002756 US9202756W WO9219037A1 WO 1992019037 A1 WO1992019037 A1 WO 1992019037A1 US 9202756 W US9202756 W US 9202756W WO 9219037 A1 WO9219037 A1 WO 9219037A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voltage
- power supply
- transistor
- high voltage
- low
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/10—Arrangements incorporating converting means for enabling loads to be operated at will from different kinds of power supplies, e.g. from ac or dc
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/908—Inrush current limiters
Definitions
- the present invention relates to the field of low voltage DC power supplies. Specifically, the present invention relates to regulated low voltage DC power supplies having a wide range of AC or DC input voltages.
- a goal of the present invention is to provide a highly efficient regulated low voltage DC power supply that can be used with input voltages ranging from 12 to 240 volts and having frequencies from DC to 400 Hertz AC. Efficiency of the power supply is increased by using a high voltage N-channel MOSFET transistor to control the high voltage primary switching transistor.
- a second goal of the present invention is to increase the switching slew rate of the power supply by improving the feed back circuitry of the primary switching transistor.
- the increase in switching slew rate is achieved by inserting a voltage ripple derived from the load current into a dynamic feedback circuit.
- the injected voltage ripple and a voltage divider network interactively work with the transistor of the dynamic feedback circuit to increases the turn-on and turn-off speed of the transistors in the feed back circuit which control the primary switching transistor.
- a third goal of the present invention is to protect the primary switching transistor by providing a power-up inrush clamping feature in the circuitry. This is accomplished by placing a bypass diode in the dynamic feedback circuit which limits the switching current to approximately two times the nominal switching current.
- Figure 1 is a schematic of the universal input voltage power supply circuit.
- FIG. 2 is a schematic of a second embodiment of the universal input voltage power supply circuit.
- a regulated power supply of the present invention is capable of accepting input voltage ranging from 12-240 Vdc or 24-240 Vac and providing two regulated low voltage DC outputs.
- a first embodiment is shown in Figure 1 and a second embodiment is shown in Figure 2.
- of input voltage is applied across terminals L-j and L2.
- a transient suppression circuit 14 is placed across the line inputs L-j and L2 to suppress any conduct transient voltage spikes from the input voltage.
- a DC voltage rectifier 18 produces DC voltage for the remainder of the power supply circuit.
- the primary switching element of the power supply is a first high voltage transistor 22. In the first embodiment a 600 volt bipolar transistor is used for the first high voltage transistor 22.
- the 8.2 volt charge across the storage capacitor 30 forms a roughly regulated DC output available across output terminal 42 and ground terminal 46.
- This roughly regulated DC output is suitable for devices which do not require a high degree of regulation or low ripple voltage.
- a 5 Vdc output having a higher degree of regulation and low ripple is provided by a low drop-out voltage regulator 50, Motorola
- the on and off switching of first high voltage transistor 22 is controlled by a second high voltage transistor 58.
- the second high voltage transistor 58 is a 550 volt N-channel MOSFET transistor which can be driven much more efficiently than a bipolar transistor used in the same application.
- the first high voltage transistor 22 is turned on and off in response to the current flowing from inductor 26 with respect to the rms current of the load device.
- the first high voltage transistor 22 is turned on when the current of inductor 26 is approximately 30 mA below the rms load current, and turned off when the current of inductor 26 is approximately 30 mA above the rms load current.
- a dynamic feedback circuit 62 senses the load and controls the switching of the second high voltage transistor 58 which in turn controls the switching of the first high voltage transistor 22.
- the dynamic feedback circuit 62 includes a 6.8 ⁇ current sensing resistor 66 and a divider network 70 comprised of a 1 K ⁇ resistor 82. The values of these resistors ultimately control the switching action of the first high voltage transistor 22.
- the dynamic feedback circuit 62 also includes a first low voltage bipolar transistor 86, a second low voltage N- channel MOSFET transistor 90, a third low voltage bipolar transistor 94, and a fourth low voltage bipolar transistor 98.
- the first, third, and fourth low voltage transistors 86, 94, and 98, respectively, are bipolar transistors.
- the second low voltage transistor 90 is an N-channel MOSFET transistor and must have a maximum gate voltage threshold less than the maximum gate voltage threshold of second high voltage transistor 58.
- the current sensing resistor 66 senses and transforms current supplied to the load or the storage capacitor 30 by the first high voltage transistor 22 into a voltage ripple which is injected into the feedback circuit 62. This voltage ripple increases the switching slew rate of the first low voltage transistor 86. Transistors 90, 94 and 98 work together during the switching phase to ultimately increase the switching speed of first high voltage transistor 22.
- a bypass diode 102 provides a means for limiting power-up inrush current to the first high voltage transistor 22.
- the bypass diode 102 permits the inrush current to go directly to the dynamic feedback circuit 62 from the current sensing resistor 66 bypassing the Zener diode 34.
- Bypass diode 102 Is rated at 100 volts and limits the inrush current to approximately two times the nominal switching current or 225 mA.
- the bipolar first high voltage transistor 22 is replaced with a P-channel MOSFET high voltage transistor 106 and a Zener diode 110 is placed across the gate and source of the MOSFET high voltage transistor 106.
- the MOSFET transistor 106 increases the switching speed of the power supply from approximately 400 nS with the bipolar transistor to approximately 250 nS with the MOSFET transistor.
- the inductor 26 will start supplying current to the load and storage capacitor 30.
- the base voltage of the first low voltage transistor 86 will drop below 0.6 volts causing it to start turning off.
- first low voltage transistor 86 turns off the gate voltage of second low voltage transistor 90 increases causing it to start turning on.
- second low voltage transistor 90 turns on the voltage dividing resistors 78 and 82 reduce the base voltage of transistor 86 causing it to turn off sharply.
- first low voltage transistor 86 burns off its collector, voltage increases causing the gate voltage of second high voltage transistor 58 to increase turning it on and also turning on first high voltage transistor 22.
- second high voltage transistor 58 provides constant base current control for first high voltage transistor 22 and fourth low voltage transistor 98 acts as a shunt for the gate of second high voltage transistor 58 creating the constant base drive for first high voltage transistor 22.
- Third low voltage transistor 94 turns on adding additional voltage dividing resistor 74 to the divider network 70 and further reducing the base voltage of first low voltage transistor 86. As the ripple voltage produced by sensing resistor 66 increases, the base voltage of first low voltage transistor 86 also increases to a point that it will be sufficient to turn on first low voltage transistor 86.
- first low voltage transistor 86 turns on, the gate voltage of second high voltage transistor 58 decreases which also causes third and fourth low voltage transistors 94 and 98, respectively, to turn off immediately.
- third low voltage transistor 94 turns off, dividing resistor 74 is removed from the voltage dividing network 70 causing the base voltage of first low voltage transistor 86 to increase suddenly. The sudden increase in base current causes first low voltage transistor to turn on sharply.
- the gate voltage of second high voltage transistor is reduced sharply causing it to turn off and also causing first high voltage transistor 22 to turn off.
- the combination of feedback transistors 86, 90 and 94 with the voltage divider network 70 provides hysteresis in the dynamic feedback circuit 62. Hysteresis in the dynamic feedback circuit 62 increases the voltage required for turning off the power supply to a level higher than the voltage required to turn on the power supply. This hysteresis or increase in turn off voltage increases switching noise immunity in the power supply.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Rectifiers (AREA)
Abstract
The power supply of the present invention is designed to operate over a wide range of both AC and DC input voltages and frequencies from 0-400 Hz. The power supply also provides two DC low voltage outputs, one for devices that do not require a high degree of regulation. The power supply also includes a power-up inrush clamp (102) to limit high start-up currents to approximately two times the nominal switching current. The primary switching transistor (22) of the power supply is controlled by a dynamic feedback circuit (62) which works interactively to increase the switching speed of the primary switching transistor (22).
Description
UNIVERSAL INPUT VOLTAGE POWER SUPPLY
FIELD OF THE INVENTION
The present invention relates to the field of low voltage DC power supplies. Specifically, the present invention relates to regulated low voltage DC power supplies having a wide range of AC or DC input voltages.
BACKGROUND OF THE INVENTION
It is well known that solid state and digital electronic devices require regulated low voltage DC power supplies to ensure proper operation without damage to the circuit components. It is also known in the art to manufacture power supplies that will produce a low voltage DC output while having a wide input range of AC or DC volts.
SUMMARY OF THE INVENTION A goal of the present invention is to provide a highly efficient regulated low voltage DC power supply that can be used with input voltages ranging from 12 to 240 volts and having frequencies from DC to 400 Hertz AC. Efficiency of the power supply is increased by using a high voltage N-channel MOSFET transistor to control the high voltage primary switching transistor.
A second goal of the present invention is to increase the switching slew rate of the power supply by improving the feed back circuitry of the primary switching transistor. The increase in switching slew rate is achieved by inserting a voltage ripple derived from the load current into a dynamic feedback circuit. The injected voltage ripple and a voltage divider network interactively work with the transistor of the dynamic feedback circuit to increases the turn-on and turn-off speed of the transistors in the feed back circuit which control the primary switching transistor.
A third goal of the present invention is to protect the primary switching transistor by providing a power-up inrush clamping feature in the circuitry. This is accomplished by placing a bypass diode in the dynamic feedback circuit which limits the switching current to approximately two times the nominal switching current.
Other features and advantages of the invention will become apparent to those skilled in the art upon review of the following detailed description, claims and drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a schematic of the universal input voltage power supply circuit.
Figure 2 is a schematic of a second embodiment of the universal input voltage power supply circuit. Before one embodiment of the invention is explained in detail, it is to be understood that the invention is not limited in its application to the details of construction and description or illustrated in the drawings. The invention is capable of other embodiments and of being practiced or being carried out in various other ways. Also, it is to be understood that the phraseology and terminology used herein is for the purpose of description and should not be regarded as limiting.
DESCRIPTION OF THE PREFERRED EMBODIMENT
A regulated power supply of the present invention is capable of accepting input voltage ranging from 12-240 Vdc or 24-240 Vac and providing two regulated low voltage DC outputs. A first embodiment is shown in Figure 1 and a second embodiment is shown in Figure 2. A source V-| of input voltage is applied across terminals L-j and L2. A transient suppression circuit 14 is placed across the line inputs L-j and L2 to suppress any conduct transient voltage spikes from the input voltage. Immediately following the transient voltage suppression circuit, a DC voltage rectifier 18 produces DC voltage for the remainder of the power supply circuit. The primary switching element of the power supply is a first high voltage transistor 22. In the first embodiment a 600 volt bipolar transistor is used for the first high voltage transistor 22. When the first high voltage transistor 22 is turned on a current flows through an 8.5 mH
inductor 26 and a lower ESR 330 uF electrolytic storage capacitor 30 is charged. The inductor 26 drops all of the applied line voltage across its reactive impedance, except for approximately 8.2 volts which is the charge applied to the storage capacitor 30. The charge on the storage capacitor 30 is controlled by an 8.2 volt Zener diode 34 in parallel with the storage capacitor 30. As current flows through the inductor 26, it is stored as magnetic field energy. When the first high voltage transistor 22 is turned off, the field energy of inductor 26 converts to electric current and is supplied to the connected load and the storage capacitor 30 through a freewheeling diode 38. The 8.2 volt charge across the storage capacitor 30 forms a roughly regulated DC output available across output terminal 42 and ground terminal 46. This roughly regulated DC output is suitable for devices which do not require a high degree of regulation or low ripple voltage. A 5 Vdc output having a higher degree of regulation and low ripple is provided by a low drop-out voltage regulator 50, Motorola
LM2931Z-5.0, and is available across terminal 54 and ground terminal 46. This 5 Vdc output is suitable for digital electronic devices.
The on and off switching of first high voltage transistor 22 is controlled by a second high voltage transistor 58. In the first embodiment, the second high voltage transistor 58 is a 550 volt N-channel MOSFET transistor which can be driven much more efficiently than a bipolar transistor used in the same application. The first high voltage transistor 22 is turned on and off in response to the current flowing from inductor 26 with respect to the rms current of the load device. For this particular embodiment, the first high voltage transistor 22 is turned on when the current of inductor 26 is approximately 30 mA below the rms load current, and turned off when the current of inductor 26 is approximately 30 mA above the rms load current. A dynamic feedback circuit 62 senses the load and controls the switching of the second high voltage transistor 58 which in turn controls the switching of the first high voltage transistor 22.
The dynamic feedback circuit 62 includes a 6.8Ω current sensing resistor 66 and a divider network 70 comprised of a 1 KΩ resistor 82. The values of these resistors ultimately control the switching action of the first high voltage transistor 22. The dynamic feedback circuit 62 also includes a first low voltage bipolar transistor 86, a second low voltage N- channel MOSFET transistor 90, a third low voltage bipolar transistor 94,
and a fourth low voltage bipolar transistor 98. The first, third, and fourth low voltage transistors 86, 94, and 98, respectively, are bipolar transistors. The second low voltage transistor 90 is an N-channel MOSFET transistor and must have a maximum gate voltage threshold less than the maximum gate voltage threshold of second high voltage transistor 58. The current sensing resistor 66 senses and transforms current supplied to the load or the storage capacitor 30 by the first high voltage transistor 22 into a voltage ripple which is injected into the feedback circuit 62. This voltage ripple increases the switching slew rate of the first low voltage transistor 86. Transistors 90, 94 and 98 work together during the switching phase to ultimately increase the switching speed of first high voltage transistor 22.
A bypass diode 102 provides a means for limiting power-up inrush current to the first high voltage transistor 22. The bypass diode 102 permits the inrush current to go directly to the dynamic feedback circuit 62 from the current sensing resistor 66 bypassing the Zener diode 34. Bypass diode 102 Is rated at 100 volts and limits the inrush current to approximately two times the nominal switching current or 225 mA.
In the second embodiment shown in Figure 2, the bipolar first high voltage transistor 22 is replaced with a P-channel MOSFET high voltage transistor 106 and a Zener diode 110 is placed across the gate and source of the MOSFET high voltage transistor 106. The MOSFET transistor 106 increases the switching speed of the power supply from approximately 400 nS with the bipolar transistor to approximately 250 nS with the MOSFET transistor.
The following is a description of the power supply operation starting at the point at which the first high voltage transistor 22 has just turned off. The inductor 26 will start supplying current to the load and storage capacitor 30. When the current supplied by inductor 26 drops to 30 mA rms below the load current, the base voltage of the first low voltage transistor 86 will drop below 0.6 volts causing it to start turning off. As first low voltage transistor 86 turns off the gate voltage of second low voltage transistor 90 increases causing it to start turning on. As second low voltage transistor 90 turns on the voltage dividing resistors 78 and 82 reduce the base voltage of transistor 86 causing it to turn off sharply. As first low voltage transistor 86 burns off its collector, voltage increases
causing the gate voltage of second high voltage transistor 58 to increase turning it on and also turning on first high voltage transistor 22. At this point, second high voltage transistor 58 provides constant base current control for first high voltage transistor 22 and fourth low voltage transistor 98 acts as a shunt for the gate of second high voltage transistor 58 creating the constant base drive for first high voltage transistor 22. Third low voltage transistor 94 turns on adding additional voltage dividing resistor 74 to the divider network 70 and further reducing the base voltage of first low voltage transistor 86. As the ripple voltage produced by sensing resistor 66 increases, the base voltage of first low voltage transistor 86 also increases to a point that it will be sufficient to turn on first low voltage transistor 86. As first low voltage transistor 86 turns on, the gate voltage of second high voltage transistor 58 decreases which also causes third and fourth low voltage transistors 94 and 98, respectively, to turn off immediately. When third low voltage transistor 94 turns off, dividing resistor 74 is removed from the voltage dividing network 70 causing the base voltage of first low voltage transistor 86 to increase suddenly. The sudden increase in base current causes first low voltage transistor to turn on sharply. As first low voltage transistor 86 turns off, the gate voltage of second high voltage transistor is reduced sharply causing it to turn off and also causing first high voltage transistor 22 to turn off. The combination of feedback transistors 86, 90 and 94 with the voltage divider network 70 provides hysteresis in the dynamic feedback circuit 62. Hysteresis in the dynamic feedback circuit 62 increases the voltage required for turning off the power supply to a level higher than the voltage required to turn on the power supply. This hysteresis or increase in turn off voltage increases switching noise immunity in the power supply.
Claims
1. A universal input voltage DC power supply connected to an AC or DC source voltage, said power supply comprising: (a) a pair of input terminals for receiving the universal AC or DC voltage input; (b) a transient voltage suppression means connected across said input terminals for suppressing transient voltage spikes from the universal input source voltage; (c) a DC voltage rectifier means for providing a DC voltage to said power supply circuits;
(d) a first high voltage transistor for primary switching of the power supply;
(e) a second high voltage transistor for controlling said first high voltage transistor;
(f) a current storage means for supplying current to the load when said first high voltage transistor is turned off;
(g) an inrush clamping means for preventing high start-up currents from damaging said first high voltage transistor; (h) a dynamic feedback circuit for interactively speeding up the switching rate of said first high voltage transistor; (i) a first low voltage output for devices not requiring a high degree of regulation or low ripple voltage; and G) a second low voltage output for devices requiring a higher degree of regulation and low ripple voltage.
2. The power supply of claim 1 wherein said current storage means comprises:
(a) an inductor for storing current as magnetic field energy; and
(b) a storage capacitor charged to a value determined by a Zener diode in parallel with said storage capacitor.
3. The power supply of claim 2 wherein said inrush clamping means comprises:
(a) a bypass diode for permitting the inrush current to bypass said storage capacitor and said Zener diode and flow directly to said dynamic feedback circuit for controlling the switching of said first high voltage transistor.
4. The power supply of claim 3 wherein said first high voltage transistor is a high voltage PNP bipolar transistor.
5. The power supply of claim 4 wherein said second high voltage transistor is a high voltage N-channel MOSFET transistor.
6. The power supply of claim 5 wherein said dynamic feedback circuit comprises:
(a) a sensing resistor for sensing load current and converting the load current into a ripple voltage inserted into said dynamic feedback circuit;
(b) a plurality of low voltage transistors connected such that the output of one of said transistors influences the state of another of said transistors;
(c) a resistor divider network activated by said low voltage transistors, said resistor divider network interacts with said low voltage transistors to increase the switching speed of said low voltage transistors.
7. The power supply of claim 6 wherein one of said low voltage transistors is a low voltage N-channel MOSFET transistor and wherein the maximum gate voltage threshold of said low voltage N-channel MOSFET transistor is less than the minimum gate voltage threshold of said high voltage P- channel MOSFET transistor.
8. The power supply of claim 6 wherein said ripple current initiates the power supply switching process.
9. The power supply of claim 1 wherein said first low voltage output is taken across a low drop-out voltage regulator.
10. The power supply of claim 1 wherein said second low voltage output is taken across a low drop-out voltage regulator.
11. The power supply of claim 1 wherein said first high voltage transistor is a high voltage N-channel MOSFET transistor.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP92910695A EP0580742B1 (en) | 1991-04-15 | 1992-04-06 | Universal input voltage power supply |
DE69212600T DE69212600T2 (en) | 1991-04-15 | 1992-04-06 | POWER SUPPLY WITH UNIVERSAL INPUT VOLTAGE |
JP4510027A JPH06506821A (en) | 1991-04-15 | 1992-04-06 | Power supply for general input voltage |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US685,353 | 1991-04-15 | ||
US07/685,353 US5126652A (en) | 1991-04-15 | 1991-04-15 | Universal input voltage power supply |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1992019037A1 true WO1992019037A1 (en) | 1992-10-29 |
Family
ID=24751827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1992/002756 WO1992019037A1 (en) | 1991-04-15 | 1992-04-06 | Universal input voltage power supply |
Country Status (6)
Country | Link |
---|---|
US (1) | US5126652A (en) |
EP (1) | EP0580742B1 (en) |
JP (1) | JPH06506821A (en) |
DE (1) | DE69212600T2 (en) |
ES (1) | ES2090639T3 (en) |
WO (1) | WO1992019037A1 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US5642027A (en) * | 1992-01-07 | 1997-06-24 | Windes; John A. | Current-limited system for capacitive load powering |
DE4232867A1 (en) * | 1992-09-30 | 1994-03-31 | Thomson Brandt Gmbh | Power supply for an LF sound amplifier |
US5359276A (en) * | 1993-05-12 | 1994-10-25 | Unitrode Corporation | Automatic gain selection for high power factor |
US5726875A (en) * | 1993-09-27 | 1998-03-10 | Mitsumi Electric Co. Ltd. | AC-DC adapter |
JP3126565B2 (en) * | 1993-11-01 | 2001-01-22 | 株式会社東芝 | AC / DC converter |
US5534768A (en) * | 1994-02-09 | 1996-07-09 | Harris Corporation | Regulated power supply having wide input AC/DC voltage range |
US5578916A (en) * | 1994-05-16 | 1996-11-26 | Thomson Consumer Electronics, Inc. | Dual voltage voltage regulator with foldback current limiting |
US5587895A (en) * | 1994-09-07 | 1996-12-24 | Harkins; Michael T. | Electrical power supply with single output from range of input voltages |
EP0782786A1 (en) * | 1994-09-21 | 1997-07-09 | Abbott Laboratories | High efficiency voltage converter and regulator circuit |
US5814979A (en) * | 1995-06-01 | 1998-09-29 | Maxim Integrated Products, Inc. | Low drop out switching regulator |
US5598093A (en) * | 1995-07-26 | 1997-01-28 | Acatrinei; Beniamin | Low dissipation controllable electron valve for controlling energy delivered to a load and method therefor |
IT1291363B1 (en) * | 1997-05-13 | 1999-01-07 | Sgs Thomson Microelectronics | DEVICE IN EMITTER-SWITCHING CONFIGURATION WITH MEANS TO RECOVER THE ELECTRIC CHARGE DURING THE SHUTDOWN PHASE |
US6134125A (en) * | 1999-05-17 | 2000-10-17 | Stmicroelectronics, Inc. | AC and DC input power supply |
US6812678B1 (en) * | 1999-11-18 | 2004-11-02 | Texas Instruments Incorporated | Voltage independent class A output stage speedup circuit |
CN2402549Y (en) * | 1999-12-02 | 2000-10-25 | 杜顺兴 | Double-loop safety belt automatic warning device for car |
JP2001236130A (en) * | 2000-02-21 | 2001-08-31 | Alps Electric Co Ltd | Power supply circuit |
EP1748538A1 (en) * | 2005-07-29 | 2007-01-31 | STMicroelectronics S.r.l. | Switching power supply with voltage limiting device and control method thereof |
US7177164B1 (en) | 2006-03-10 | 2007-02-13 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Low power, high voltage power supply with fast rise/fall time |
US20080061634A1 (en) * | 2006-09-07 | 2008-03-13 | Ricoh Company, Limited | Power-supply control device, interlock device, and electric apparatus |
US7531914B1 (en) * | 2006-12-13 | 2009-05-12 | Yazaki North America, Inc. | Dual path output current level control |
US20090016091A1 (en) * | 2007-07-13 | 2009-01-15 | Blackstone-Ney Ultrasonics, Inc. | Circuit and system for ultrasonic power regulation |
KR101356308B1 (en) | 2008-07-18 | 2014-01-28 | 플로우서브 매니지먼트 컴퍼니 | Variable speed actuator |
US8237419B2 (en) * | 2009-02-27 | 2012-08-07 | Schneider Electric USA, Inc. | Microcontroller operated current limited switching power supply for circuit protective devices |
US8890494B2 (en) | 2011-11-16 | 2014-11-18 | Rockwell Automation Technologies, Inc. | Wide input voltage range power supply circuit |
US9252652B2 (en) | 2011-11-16 | 2016-02-02 | Rockwell Automation Technologies, Inc. | Wide input voltage range power supply circuit |
US9155232B2 (en) | 2013-01-10 | 2015-10-06 | Rockwell Automation Technologies, Inc. | Wide input voltage range power supply circuit |
Citations (5)
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US3671853A (en) * | 1970-12-24 | 1972-06-20 | Bell Telephone Labor Inc | Dual-output regulated switching power supply |
US4494064A (en) * | 1982-10-25 | 1985-01-15 | Sperry Corporation | Direct current inrush limiting circuit |
US4683415A (en) * | 1986-09-15 | 1987-07-28 | Tektronix, Inc. | Line frequency switching power supply |
US4893228A (en) * | 1987-09-01 | 1990-01-09 | Hewlett Packard Company | High-efficiency programmable power supply |
US4937722A (en) * | 1988-08-23 | 1990-06-26 | North American Philips Corporation | High efficiency direct coupled switched mode power supply |
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EP0059053A3 (en) * | 1981-02-21 | 1983-05-18 | THORN EMI plc | Switched mode power supply |
JPS5884322A (en) * | 1981-11-13 | 1983-05-20 | Omron Tateisi Electronics Co | Power supply circuit for both positive and negative uses |
EP0196680A3 (en) * | 1982-05-26 | 1986-11-20 | Nippon Chemi-Con Corporation | Switching regulator |
-
1991
- 1991-04-15 US US07/685,353 patent/US5126652A/en not_active Expired - Lifetime
-
1992
- 1992-04-06 EP EP92910695A patent/EP0580742B1/en not_active Expired - Lifetime
- 1992-04-06 JP JP4510027A patent/JPH06506821A/en active Pending
- 1992-04-06 DE DE69212600T patent/DE69212600T2/en not_active Expired - Fee Related
- 1992-04-06 ES ES92910695T patent/ES2090639T3/en not_active Expired - Lifetime
- 1992-04-06 WO PCT/US1992/002756 patent/WO1992019037A1/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3671853A (en) * | 1970-12-24 | 1972-06-20 | Bell Telephone Labor Inc | Dual-output regulated switching power supply |
US4494064A (en) * | 1982-10-25 | 1985-01-15 | Sperry Corporation | Direct current inrush limiting circuit |
US4683415A (en) * | 1986-09-15 | 1987-07-28 | Tektronix, Inc. | Line frequency switching power supply |
US4893228A (en) * | 1987-09-01 | 1990-01-09 | Hewlett Packard Company | High-efficiency programmable power supply |
US4937722A (en) * | 1988-08-23 | 1990-06-26 | North American Philips Corporation | High efficiency direct coupled switched mode power supply |
Non-Patent Citations (1)
Title |
---|
See also references of EP0580742A4 * |
Also Published As
Publication number | Publication date |
---|---|
DE69212600T2 (en) | 1996-12-19 |
JPH06506821A (en) | 1994-07-28 |
EP0580742A4 (en) | 1994-08-17 |
EP0580742A1 (en) | 1994-02-02 |
EP0580742B1 (en) | 1996-07-31 |
ES2090639T3 (en) | 1996-10-16 |
DE69212600D1 (en) | 1996-09-05 |
US5126652A (en) | 1992-06-30 |
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