WO1991019325A1 - Optical emission spectroscopy to determine etch completion of indium tin oxide - Google Patents

Optical emission spectroscopy to determine etch completion of indium tin oxide Download PDF

Info

Publication number
WO1991019325A1
WO1991019325A1 PCT/US1991/003664 US9103664W WO9119325A1 WO 1991019325 A1 WO1991019325 A1 WO 1991019325A1 US 9103664 W US9103664 W US 9103664W WO 9119325 A1 WO9119325 A1 WO 9119325A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
ito
tin oxide
indium tin
etching
Prior art date
Application number
PCT/US1991/003664
Other languages
French (fr)
Inventor
Paul L. Roselle
Original Assignee
Eastman Kodak Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Company filed Critical Eastman Kodak Company
Publication of WO1991019325A1 publication Critical patent/WO1991019325A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338Etching
    • C04B41/5346Dry etching
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO

Definitions

  • the present invention relates to the plasma etching of indium tin oxide.
  • Solid state CCD image sensors often employ a double pclysilicon gate structure to form the sensor electrodes.
  • Such a structure has the first polysilicon electrode (poly-1) separated from the second polysilicon electrode (poly-2) by a thin insulating layer of silicon dioxide.
  • Poly—1 is slightly overlapped by poly-2.
  • the systematic variation of the potential applied to these electrodes referred to as clocking, permits the device to function.
  • clocking permits the device to function.
  • light passes through the polysilicon electrodes and creates electron hole pairs in the underlying silicon. ' These electrons are accumulated prior to clocking the polysilicon electrodes to remove the accumulated charge.
  • the polysilicon electrodes, through which light must pass, are not entirely transparent. This lack of transparency results in the reduction of sensitivity "and spectral response of the image sensor.
  • indium tin oxide would be an effective electrode for such a device.
  • the use of an indium tin oxide electrode enhances the blue response —£.— and overall sensitivity of a frame transfer image sensor.
  • the effective ASA of the device could be increased by as much as a factor of two.
  • ITO has not been used on such devices is " because it is difficult to pattern such material.
  • the only practical method for etching indium tin oxide has been by immersion in a hot hydroiodic acid solution. Such an acid etches the material isotropically and is not selective to photoresist.
  • a plasma containing methyl radicals (CH *) can effectively etch indium tin oxide anisotropically and with high selectivity to photoresist and silicon dioxide.
  • the emission lines from the CH ⁇ » containing plasma have been found to provide strong intensity changes at completion of the etching of an ITO layer, thereby indicating when to terminate the process.
  • a method of etching indium tin oxide comprising the steps of: forming a plasma containing CH--; etching the ITO by volatilizing the ITO by a reaction with the plasma of CH--; and monitoring the intensity characteristic of at least one optical emission line of the plasma to determine etch completion and then terminate the etching process.
  • FIG. la is a schematic, in partial cross—section, of a conventional plasma etcher which uses radio frequency energy to ignite and sustain the plasma.
  • FIG. 2a is a plot of emission wavelength versus emission intensity for a CH, , H ⁇ plasma
  • FIG. 2b is a typical plot of intensity versus time for an emission line associated with the etch reactant CEr * - ;
  • FIG. 2c is a typical plot of intensity versus time for an emission line associated with an etch product; and FIG. 3 shows various steps in patterning an
  • a plasma is a state of matter in which the gases in a vessel with a total pressure less than atmospheric pressure are partially ionized .by an electric field.
  • an electric field can be from a radio frequency generator, microwave frequency generator or DC voltage field.
  • the emission of light from the excited gases in a plasma is a well known phenomenon.
  • the wavelength of the light emitted is specific to the excited species that compose the plasma.
  • Such excited species will include the reactants and products of any reactions occurring in the plasma.
  • the intensity of the characteristic light emissions of the reactants will be low during etching and then increase as ' the layer of material being etched is cleared away.
  • the intensity will be high during the etch and will drop as the layer of material being etched is cleared away.
  • a plasma ignited by the action of a suitable electric field on a mixture of CH, gas and H ⁇ gas, will contain methyl radicals (CH.,*) as well as other species generated from the cracking of the molecules of CH, and H ⁇ .
  • CH, and B. * mixtures are not the only means of producing methyl radicals (CH *) and that mixtures of ethane and hydrogen, propane and hydrogen, or other organic compounds will result in methyl radical creation in plasma and will, in so doing, etch ITO.
  • a wafer 18 is placed on a lower electrode 15 which is connected to an RF radiation source 28.
  • Vacuum is achieved in the chamber by the use of an oil diffusion pump and rotary vacuum pump, not shown.
  • the lower electrode 15 is heated by resistive heaters 16 located on the back of the electrode.
  • the H objection and CH, gases are admitted into the chamber through a diffuser 26.
  • the flows of the gases are regulated by mass flow controllers 22 and 24.
  • Process pressure in the vessel is controlled by a vacuum throttle valve 21.
  • a plasma of CH, and H 2 is ignited in a space 30a between the lower electrode 15, on which the wafer 18 sits, and an upper electrode 12.
  • the resultant CH-- generated in region 30 will react with the ITO on the wafer 18 volatilizing the ITO off the ' wafer to be pumped away by the vacuum pump.
  • the emission of light from the CH, and H ⁇ plasma is monitored by an optical emission spectrometer (40) which detects light from the plasma through a window (41) in the side of the etcher.
  • the spectrometer 30 monitors the intensity of specific lines associated with the reactants and products of the etch and displays the intensity versus time plot on a recorder 42, CRT or pen recorder.
  • a control unit 44 which is coupled to the spectrometer 40 and shuts-off the RF radiation source 28.
  • FIG. 2a we see a plot of intensity in counts versus the intensity output of spectrometer 40 and displayed by recorder 42. Each count refers to a specific amount of energy received by the spectrometer.
  • the light emission lines labelled (B) at about 345 nm and 375 nm are both caused by reactant CH-- in the plasma. These lines are present whether or not CH 3 * is etching ITO.
  • the light emission line at about 353 nm is caused by a product produced by etching ITO with CH--.
  • FIG. 2b we see a plot of one of the emission lines labelled (B) in FIG. 2a.
  • FIG. 2c is a plot of an etch product produced when ITO is etched by CH-* •
  • the etching process begins at time 0.
  • the ITO is beginning to clear (become exhausted).
  • the etching process is completed. It is desirable to run the process " a short duration after the process levels off to insure that all the ITO has been etched.
  • the RF radiation source 28 is then shut-off at the termination point (TP) .
  • the process can be monitored by viewing either a reaction product or a reactant emission line.
  • FIGS. 3a-c show the process of pattern transfer for the definition of ITO where the etched ITO is to be used as a poly-1 electrode.
  • microlithographic photoresist mask 34 has been deposited and patterned in a conventional manner on the surface of an ITO layer 32 which has been deposited on an SiO- layer 30 on a silicon substrate 36.
  • ITO is most usually deposited by RF sputter deposition.
  • the ITO layer 32 has been etched anisotropically by the plasma of CH-- thereby transferring the photoresist pattern into the ITO and stopping on the SiO- layer 30. Measurements have shown that the plasma of CH.,- that etches the ITO has a high selectivity to both the photoresist and the underlying SiO- layer.
  • the photoresist 34 has been stripped off of the ITO 32 and the device may proceed to further processing.
  • the photoresist is most usually removed by 0- plasma stripping.
  • the mechanism of etching of ITO is believed to be caused by methyl radicals reacting with indium and tin to create volatile organometallic compounds as shown by the following reaction: plasma CH 4 +H 2 > CH 3 -+In+Sn+0- En(CH 3 ) 3 t+Sn(CH 3 ) 4 t+COt
  • An etcher similar to the one represented by FIG. 1 was used to etch ITO.
  • the radio frequency used to ignite and sustain the plasma was 13.56 megahertz at 85 watts forward power.
  • the wafer was heated to a temperature of 70°C.
  • the chamber was evacuated to a base pressure of 1 x 10- prior to the admission of the CH ⁇ and H 2 gases.
  • the flow rate for the CH was 25 seem and the flow rate the the H- was 150 seem.
  • a process pressure of 150 Mtorr was maintained during the etch.
  • the sputter deposited ITO etched at a rate of 275 angstroms per minute and showed very high selectivity to the photoresist and the underlying silicon dioxide.

Abstract

ITO is etched by a plasma containing CH3. gas. The intensity characteristic of at least one optical emission line is monitored to determine etch completion.

Description

OPTICAL EMISSION SPECTROSCOPY TO DETERMINE ETCH
COMPLETION OF INDIUM TIN OXIDE.
Reference to Co-pending Patent Applications
Reference is made to commonly assigned U.S. Patent Application Serial No. 533.232, filed June 4, 1990 to Paul Roselle, and to commonly assigned U.S. Patent Application Serial No. 520,486, filed May 7, 1990 to Paul Roselle, Gustavo Paz-Pujalt and Ronald Wexler . Technical Field
The present invention relates to the plasma etching of indium tin oxide. Background Art
Solid state CCD image sensors often employ a double pclysilicon gate structure to form the sensor electrodes. Such a structure has the first polysilicon electrode (poly-1) separated from the second polysilicon electrode (poly-2) by a thin insulating layer of silicon dioxide. Poly—1 is slightly overlapped by poly-2. The systematic variation of the potential applied to these electrodes, referred to as clocking, permits the device to function. In the case of frame transfer CCD image sensors, light passes through the polysilicon electrodes and creates electron hole pairs in the underlying silicon.' These electrons are accumulated prior to clocking the polysilicon electrodes to remove the accumulated charge. The polysilicon electrodes, through which light must pass, are not entirely transparent. This lack of transparency results in the reduction of sensitivity "and spectral response of the image sensor.
Due to its transparency, it has been recognized that indium tin oxide would be an effective electrode for such a device. The use of an indium tin oxide electrode enhances the blue response —£.— and overall sensitivity of a frame transfer image sensor. In fact, it has been recognized that if indium tin oxide were to be used in such a device the effective ASA of the device could be increased by as much as a factor of two. One reason that ITO has not been used on such devices is"because it is difficult to pattern such material. Heretofore, the only practical method for etching indium tin oxide has been by immersion in a hot hydroiodic acid solution. Such an acid etches the material isotropically and is not selective to photoresist. These two reasons alone show the difficulties involved in using ITO for microelectronic applications where small features are defined by photoresist lithography. It has also been recognized that ITO can be used as an antistatic coating on materials such as webs used in the manufacture of photosensitive materials. There again, it is difficult to use such a material because it is not practical to pattern it. Disclosure of the Invention
It is the object of this invention to provide a new method for the etching of indium tin oxide employing optical emission spectroscopy to determine etch completion and provide process termination.
A plasma containing methyl radicals (CH *) can effectively etch indium tin oxide anisotropically and with high selectivity to photoresist and silicon dioxide. The emission lines from the CH~» containing plasma have been found to provide strong intensity changes at completion of the etching of an ITO layer, thereby indicating when to terminate the process.
The above object is achieved in a method of etching indium tin oxide, comprising the steps of: forming a plasma containing CH--; etching the ITO by volatilizing the ITO by a reaction with the plasma of CH--; and monitoring the intensity characteristic of at least one optical emission line of the plasma to determine etch completion and then terminate the etching process. Brief Description of the Drawings
FIG. la is a schematic, in partial cross—section, of a conventional plasma etcher which uses radio frequency energy to ignite and sustain the plasma.
FIG. 2a is a plot of emission wavelength versus emission intensity for a CH, , H~ plasma; FIG. 2b is a typical plot of intensity versus time for an emission line associated with the etch reactant CEr* - ;
FIG. 2c is a typical plot of intensity versus time for an emission line associated with an etch product; and FIG. 3 shows various steps in patterning an
ITO layer formed on an Si02 insulating layer provided on a silicon substrate. Mode of Carrying Out the Invention
With reference to FIGS. 1, 2 and 3a-3c, a process for the plasma etching of indium tin oxide is described.
A plasma is a state of matter in which the gases in a vessel with a total pressure less than atmospheric pressure are partially ionized .by an electric field. As is well understood, such an electric field can be from a radio frequency generator, microwave frequency generator or DC voltage field.
The emission of light from the excited gases in a plasma is a well known phenomenon. The wavelength of the light emitted is specific to the excited species that compose the plasma. Such excited species will include the reactants and products of any reactions occurring in the plasma. For the case where a plasma is used to etch a layer of some material, the intensity of the characteristic light emissions of the reactants will be low during etching and then increase as' the layer of material being etched is cleared away. Conversely, for the emission from the product of the etch, the intensity will be high during the etch and will drop as the layer of material being etched is cleared away. A plasma, ignited by the action of a suitable electric field on a mixture of CH, gas and H~ gas, will contain methyl radicals (CH.,*) as well as other species generated from the cracking of the molecules of CH, and H~. As in any plasma, the concentrations of the various species in the plasma depend upon the power and frequency of the electric field applied, the pressure of the plasma, and the concentrations of the gases used. It should be understood that CH, and B.* mixtures are not the only means of producing methyl radicals (CH *) and that mixtures of ethane and hydrogen, propane and hydrogen, or other organic compounds will result in methyl radical creation in plasma and will, in so doing, etch ITO.
For an etcher as represented in FIG. 1, a wafer 18 is placed on a lower electrode 15 which is connected to an RF radiation source 28. Vacuum is achieved in the chamber by the use of an oil diffusion pump and rotary vacuum pump, not shown.
The lower electrode 15 is heated by resistive heaters 16 located on the back of the electrode. The H„ and CH, gases are admitted into the chamber through a diffuser 26. The flows of the gases are regulated by mass flow controllers 22 and 24. Process pressure in the vessel is controlled by a vacuum throttle valve 21. When the desired flow rates, pressure and temperature are achieved, a plasma of CH, and H2 is ignited in a space 30a between the lower electrode 15, on which the wafer 18 sits, and an upper electrode 12. The resultant CH-- generated in region 30 will react with the ITO on the wafer 18 volatilizing the ITO off the'wafer to be pumped away by the vacuum pump. The emission of light from the CH, and H~ plasma is monitored by an optical emission spectrometer (40) which detects light from the plasma through a window (41) in the side of the etcher. The spectrometer 30 monitors the intensity of specific lines associated with the reactants and products of the etch and displays the intensity versus time plot on a recorder 42, CRT or pen recorder. When the intensity of the monitored reactant emission lines goes up and levels off and, simultaneously, the intensity of the monitored product emission lines goes down and levels off, the ITO layer has been fully etched away. The process is automatically terminated by a control unit 44 which is coupled to the spectrometer 40 and shuts-off the RF radiation source 28. Alternatively, an operator can view the* output of the recorder 42 and shut—off the RF radiation source 28. Turning now to FIG. 2a, we see a plot of intensity in counts versus the intensity output of spectrometer 40 and displayed by recorder 42. Each count refers to a specific amount of energy received by the spectrometer. The light emission lines labelled (B) at about 345 nm and 375 nm are both caused by reactant CH-- in the plasma. These lines are present whether or not CH3* is etching ITO. The light emission line at about 353 nm is caused by a product produced by etching ITO with CH--. In FIG. 2b we see a plot of one of the emission lines labelled (B) in FIG. 2a. Also, FIG. 2c .is a plot of an etch product produced when ITO is etched by CH-* • With reference to both FIGS. 2a and 2b, the etching process begins at time 0. At an inflection point (ep) in both plots, the ITO is beginning to clear (become exhausted). When both plots level off (cp) the etching process is completed. It is desirable to run the process" a short duration after the process levels off to insure that all the ITO has been etched. The RF radiation source 28 is then shut-off at the termination point (TP) . The process can be monitored by viewing either a reaction product or a reactant emission line. However, those skilled in the art will recognize that it is desirable to simultaneously monitor both a reaction product line and the CH-- emission line. The pressure of the plasma of CH, and H~ must be maintained below the polymerization point of the plasma. Likewise, the ratio of CH, to H- should be less than 20% to prevent excessive polymerization of the species in the plasma. Such excessive polymerization produced by too high of a pressure and/or too high of a concentration of CH, in H- will prevent ITO from etching uniformly if at all.
FIGS. 3a-c show the process of pattern transfer for the definition of ITO where the etched ITO is to be used as a poly-1 electrode. In FIG. 3a it is seen that microlithographic photoresist mask 34 has been deposited and patterned in a conventional manner on the surface of an ITO layer 32 which has been deposited on an SiO- layer 30 on a silicon substrate 36. ITO is most usually deposited by RF sputter deposition.
In FIG. 3b the ITO layer 32 has been etched anisotropically by the plasma of CH-- thereby transferring the photoresist pattern into the ITO and stopping on the SiO- layer 30. Measurements have shown that the plasma of CH.,- that etches the ITO has a high selectivity to both the photoresist and the underlying SiO- layer.
In FIG. 3c the photoresist 34 has been stripped off of the ITO 32 and the device may proceed to further processing. The photoresist is most usually removed by 0- plasma stripping. Example
Without limiting the generality of this invention,, the mechanism of etching of ITO is believed to be caused by methyl radicals reacting with indium and tin to create volatile organometallic compounds as shown by the following reaction: plasma CH4+H2 > CH3-+In+Sn+0- En(CH3)3t+Sn(CH3)4t+COt
ITO
Other starting gases can be used provided they form a plasma having CH--.
An etcher similar to the one represented by FIG. 1 was used to etch ITO. The radio frequency used to ignite and sustain the plasma was 13.56 megahertz at 85 watts forward power. The wafer was heated to a temperature of 70°C. The chamber was evacuated to a base pressure of 1 x 10- prior to the admission of the CH^ and H2 gases. The flow rate for the CH, was 25 seem and the flow rate the the H- was 150 seem. A process pressure of 150 Mtorr was maintained during the etch. The sputter deposited ITO etched at a rate of 275 angstroms per minute and showed very high selectivity to the photoresist and the underlying silicon dioxide. The .emission lines attributed to etch reactants and one emission line attributed to etch product were monitored and showed strong endpoint responses . Cross—sectional scanning electron micrographs of the etched ITO showed the etch to be highly anisotropic with no evidence of undercutting the photoresist. The invention has been described in detail with particular reference to certain preferred embodiments thereof, but it will be understood that variations and modifications can be effected within the spirit and scope of the invention.

Claims

CLAIMS :
1. In a method of etching indium tin oxide, comprising the steps of: forming a plasma containing CH--; etching the ITO by volatilizing the ITO by a reaction with the plasma of CH--; and monitoring the intensity characteristic of at least one optical emission line of the plasma to determine etch completion and then terminate the etching process.
2. In a method of etching indium tin oxide, comprising the steps of: forming a plasma containing CH--; etching the ITO by volatilizing the ITO by a reaction with the plasma of CH--; and monitoring the intensity characteristic of the CH-*-* optical emission line and a reaction product emission line of the plasma to determine etch completion and then terminate the etching process .
PCT/US1991/003664 1990-06-04 1991-06-03 Optical emission spectroscopy to determine etch completion of indium tin oxide WO1991019325A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53321790A 1990-06-04 1990-06-04
US533,217 1990-06-04

Publications (1)

Publication Number Publication Date
WO1991019325A1 true WO1991019325A1 (en) 1991-12-12

Family

ID=24125004

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1991/003664 WO1991019325A1 (en) 1990-06-04 1991-06-03 Optical emission spectroscopy to determine etch completion of indium tin oxide

Country Status (3)

Country Link
EP (1) EP0485590A1 (en)
JP (1) JPH05500887A (en)
WO (1) WO1991019325A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607602A (en) * 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas
US5843277A (en) * 1995-12-22 1998-12-01 Applied Komatsu Technology, Inc. Dry-etch of indium and tin oxides with C2H5I gas

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8303449L (en) * 1983-06-16 1984-12-17 Alfa Laval Thermal PACKAGING ARRANGEMENTS FOR PLATE HEAT EXCHANGERS

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528438A (en) * 1976-09-16 1985-07-09 Northern Telecom Limited End point control in plasma etching
EP0377365A1 (en) * 1988-12-19 1990-07-11 ETAT FRANCAIS représenté par le Ministre des Postes, Télécommunications et de l'Espace Process for etching a metal oxide layer with simultaneous deposition of a polymer film, use of this process in the production of a transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528438A (en) * 1976-09-16 1985-07-09 Northern Telecom Limited End point control in plasma etching
EP0377365A1 (en) * 1988-12-19 1990-07-11 ETAT FRANCAIS représenté par le Ministre des Postes, Télécommunications et de l'Espace Process for etching a metal oxide layer with simultaneous deposition of a polymer film, use of this process in the production of a transistor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
5émé Colloque International sur les Plasmas et la Pulverisation Cathodique, Antibes, Fr, 10-14 June 1985, Société Francaise du Vide Publishers, J.F. Boulineau et al.: "Etude et réalisation de couches d'oxydes d'indium et d'etain obtenues par ion plating", pages 67-71 *
Japanese Journal of Applied Physics, vol. 27, no. 9, September 1988, T. Minami et al.: "Reactive ion etching of transparent conducting tin oxide films using electron cyclotron resonance hydrogen plasma", pages L1753-L1756 *
Solid State Technology, vol. 24, no. 4, April 1981, (Washington, US) P.J. Marcoux et al.: "Methods of end point detection for plasma etching", pages 115-122 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607602A (en) * 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas
US5843277A (en) * 1995-12-22 1998-12-01 Applied Komatsu Technology, Inc. Dry-etch of indium and tin oxides with C2H5I gas

Also Published As

Publication number Publication date
JPH05500887A (en) 1993-02-18
EP0485590A1 (en) 1992-05-20

Similar Documents

Publication Publication Date Title
US5032221A (en) Etching indium tin oxide
US5667631A (en) Dry etching of transparent electrodes in a low pressure plasma reactor
JP3969864B2 (en) Method for etching indium tin oxide
US5171401A (en) Plasma etching indium tin oxide
KR20010030470A (en) A stable plasma process for etching of films
KR100580782B1 (en) Dry-etching of indium and tin oxides
US20080061030A1 (en) Methods for patterning indium tin oxide films
KR100457728B1 (en) Dry etching of indium and tin oxides with C2H5I gas
US5230771A (en) Plasma etching indium tin oxide using a deposited silicon nitride mask
US5344525A (en) Process for etching semiconductor devices
WO1991019325A1 (en) Optical emission spectroscopy to determine etch completion of indium tin oxide
JP2864967B2 (en) Dry etching method for refractory metal film
US5340438A (en) Low temperature insitu image reversal process for microelectric fabrication
WO1992000609A1 (en) Plasma etching indium tin oxide using a deposited oxide mask
Smith et al. Use of polymethylmethacrylate as an initial pattern transfer layer in fluorine-and chlorine-based reactive-ion etching
KR100489921B1 (en) Dry-etching of indium and tin oxides
KR100632621B1 (en) Dry etching method of transparent electrode in low pressure plasma reactor
US7192875B1 (en) Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens
CA2063371C (en) Selective etching of refractory metal nitrides
JPH07335615A (en) Thin film dry-etching method

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE

WWE Wipo information: entry into national phase

Ref document number: 1991911969

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1991911969

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1991911969

Country of ref document: EP