WO1990004048A1 - A method, bath and cell for the electrodeposition of tin-bismuth alloys - Google Patents
A method, bath and cell for the electrodeposition of tin-bismuth alloys Download PDFInfo
- Publication number
- WO1990004048A1 WO1990004048A1 PCT/US1988/003536 US8803536W WO9004048A1 WO 1990004048 A1 WO1990004048 A1 WO 1990004048A1 US 8803536 W US8803536 W US 8803536W WO 9004048 A1 WO9004048 A1 WO 9004048A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bismuth
- tin
- bath
- soluble
- conductive substrate
- Prior art date
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- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical group [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910001152 Bi alloy Inorganic materials 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 19
- 238000004070 electrodeposition Methods 0.000 title claims description 14
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 166
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 165
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 230000005496 eutectics Effects 0.000 claims abstract description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 49
- 238000009713 electroplating Methods 0.000 claims description 41
- 239000012141 concentrate Substances 0.000 claims description 22
- -1 alkyl sulfonic acid Chemical compound 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 238000001556 precipitation Methods 0.000 claims description 18
- 239000003792 electrolyte Substances 0.000 claims description 17
- 230000003301 hydrolyzing effect Effects 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 12
- MNMKEULGSNUTIA-UHFFFAOYSA-K bismuth;methanesulfonate Chemical compound [Bi+3].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O MNMKEULGSNUTIA-UHFFFAOYSA-K 0.000 claims description 12
- JALQQBGHJJURDQ-UHFFFAOYSA-L bis(methylsulfonyloxy)tin Chemical compound [Sn+2].CS([O-])(=O)=O.CS([O-])(=O)=O JALQQBGHJJURDQ-UHFFFAOYSA-L 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 239000002659 electrodeposit Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 abstract description 64
- 230000002378 acidificating effect Effects 0.000 abstract description 8
- 229910001128 Sn alloy Inorganic materials 0.000 abstract description 3
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 43
- 239000000243 solution Substances 0.000 description 28
- 238000007747 plating Methods 0.000 description 20
- 229940098779 methanesulfonic acid Drugs 0.000 description 16
- 238000000576 coating method Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 239000013522 chelant Substances 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- SYRPZXLPHBRVSJ-UHFFFAOYSA-N C=C.C=C.N.N.[Bi+3] Chemical group C=C.C=C.N.N.[Bi+3] SYRPZXLPHBRVSJ-UHFFFAOYSA-N 0.000 description 3
- 238000005282 brightening Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 229940021013 electrolyte solution Drugs 0.000 description 3
- 239000006023 eutectic alloy Substances 0.000 description 3
- 230000036541 health Effects 0.000 description 3
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000007928 solubilization Effects 0.000 description 3
- 238000005063 solubilization Methods 0.000 description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 241000607479 Yersinia pestis Species 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 150000003934 aromatic aldehydes Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001621 bismuth Chemical class 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 239000000174 gluconic acid Substances 0.000 description 2
- 235000012208 gluconic acid Nutrition 0.000 description 2
- 239000000383 hazardous chemical Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 150000003606 tin compounds Chemical class 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- IKRZCYCTPYDXML-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;hydrochloride Chemical compound Cl.OC(=O)CC(O)(C(O)=O)CC(O)=O IKRZCYCTPYDXML-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- COVZYZSDYWQREU-UHFFFAOYSA-N Busulfan Chemical compound CS(=O)(=O)OCCCCOS(C)(=O)=O COVZYZSDYWQREU-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- VAOOBUJDRGJIPO-UHFFFAOYSA-N N.N.N.N.[Bi+3] Chemical compound N.N.N.N.[Bi+3] VAOOBUJDRGJIPO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001451 bismuth ion Inorganic materials 0.000 description 1
- 229910000380 bismuth sulfate Inorganic materials 0.000 description 1
- TZSXPYWRDWEXHG-UHFFFAOYSA-K bismuth;trihydroxide Chemical compound [OH-].[OH-].[OH-].[Bi+3] TZSXPYWRDWEXHG-UHFFFAOYSA-K 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000004697 chelate complex Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- BEQZMQXCOWIHRY-UHFFFAOYSA-H dibismuth;trisulfate Chemical compound [Bi+3].[Bi+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O BEQZMQXCOWIHRY-UHFFFAOYSA-H 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000005028 tinplate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3473—Plating of solder
Definitions
- This invention relates to an electroplating bath, an electroplating cell and a method for the electrodeposition of a wide range of tin-bismuth alloys onto a conductive substrate.
- Tin-lead alloys have conventionally been used, for instance, as plating for multilayer circuit boards and as a eutectic solder used to bond together the layers of tin- lead plated circuit boards.
- the heat required to melt eutectic tin-lead alloy solder is so high that it can damage the components of the circuit board or impair the conductivity characteristics of the circuit board.
- Tin-bismuth alloys have characteristics that make them attractive replacements for tin-lead alloys for many purposes. Tin-bismuth alloys, for instance, do not present the health and environmental problems associated with lead containing alloys. Moreover, a tin-bismuth eutectic alloy has a melting point about 50°C lower than a tin-lead eutectic alloy, making the tin- bismuth eutectic alloy an attractive material for plating and soldering layered circuit boards. Indeed, the broad range of potential uses for tin-bismuth alloys may warrant production of tin-bismuth alloys having a bismuth content ranging from nearly
- additives which inhibit hydrolytic precipitation of bismuth in electrolyte baths are ordinarily used.
- Citric acid and chelating agents are examples of additives commonly used for this purpose.
- the present invention provides a method, bath and cell for the electrodeposition of tin-bismuth alloys onto a conductive substrate so that the bismuth content of the coplate may range from greater than zero to less than 100% bismuth by weight of the electrodeposited alloy with the balance of the alloy being tin.
- Practicing the present invention permits the electrodeposition of a fine grained alloy coating of bismuth and tin of any desired thickness and percent composition upon the immersed portion of a conductive substrate.
- the Figure is a correlation curve of percent bismuth in the coplate as a function of the weight ratio of bismuth to tin in an electroplating bath containing methane sulfonic acid electrolyte.
- Soluble bismuth was provided by bismuth methane sulfonate concentrate and a soluble bismuth anode while soluble tin was provided by stannous methane sulfonate concentrate.
- the soluble bismuth and the soluble tin are present in the bath in amounts sufficient to deposit a tin-bismuth alloy onto the conductive substrate and in a weight ratio relative to each other selected to provide a desired bismuth content of the tin-bismuth alloy on the conductive substrate;
- the present invention also provides a method for the electrodeposition of a tin-bismuth alloy onto a conductive substrate comprising: a) providing an electroplating bath comprising:
- tin-bismuth alloy are present in the bath in amounts sufficient to deposit a tin-bismuth alloy onto the conductive substrate and in a weight ratio relative to each other selected to provide a desired bismuth content of the tin-bismutha alloy on the
- titanium-bismuth alloy is understood to mean an electroplated alloy coating of greater than 0% and less than 100% bismuth by total weight of the electro-deposited alloy coating with the balance of the
- electrodeposited alloy coating being tin.
- tin- bismuth alloy will have a minimum bismuth content of about 0.1% and a maximum bismuth content of about 99.9%.
- tin-bismuth alloy having nearly any desired bismuth content may be electroplated onto a conductive substrate from a relatively simple versatile electroplating bath which includes sufficient amounts of free alkyl sulfonic acid electrolyte.
- the deposition of alloys having a wide range of bismuth content from a bath of the present invention is possible, in part, because bismuth has been found to be more hydrolytically stable in the presence of sufficient amounts of free alkyl sulfonic acid, particularly methane sulfonic acid, than in conventional electrolyte solutions used for bismuth such as sulfuric acid or chloride-citrate.
- Using a sufficient amount of alkyl" sulfonic acid electrolyte therefore is one aspect of the present invention which makes possible the electrodeposition of tin-bismuth alloys having virtually any desired bismuth content.
- Aqueous acidic electroplating baths of the present invention are therefore composed of alkyl sulfonic acids, and more
- lower alkyl sulfonic acids such as C 1-5 alkyl sulfonic acids.
- Methane or ethane sulfonic acid are the most preferred acids used in accordance with the present invention.
- alkyl sulfonic acid electrolytes useful may be purchased commercially from Pennwalt Corporation.
- alkyl sulfonic acids may be prepared by methods known to the art such as the methods described in U.S. Patent Nos. 774,049 and 2,525,942. The disclosures of U.S. Patent Nos. 774,049 and
- the amount of free alkyl sulfonic acid electrolyte in the aqueous acidic electroplating bath ordinarily ranges from about 100 grams per liter to about 400 grams per liter, preferably from about 150 grams per liter to about 300 grams per liter and more preferably 200 grams per liter to about 250 grams per liter.
- the free MSA concentration in the plating bath is below 200 grams per liter, for example below about 150 grams per liter, the bath may undergo undesirable hydrolytic precipitation of bismuth after a period of time.
- concentrations of about 200 grams per liter free MSA are maintained in the bath, hydrolytic precipitation seldom occurs and the degree of precipitation is very moderate.
- concentrations of about 250 grams per liter free MSA precipitation of bismuth ordinarily does not occur at observable levels.
- Soluble bismuth available to form a tin-bismuth alloy on a conductive substrate may be provided in a bath of the present invention by adding a bismuth salt, preferably bismuth alkyl sulfonate, directly to the bath or by a soluble bismuth metal anode. Either source of soluble bismuth may be used without the other but they are frequently used together.
- the amount of soluble bismuth in the aqueous acidic plating bath ordinarily ranges from about .05 grams per liter of the bath to about 150 grams per liter of the bath, preferably, from about .05 grams per liter of the bath to about 80 grams per liter of the bath.
- Soluble bismuth is preferably provided in bath solutions of MSA initially in the form of bismuth trimethane sulfonate concentrate (alternatively referred to as bismuth methane sulfonate
- Bismuth trimethane sulfonate concentrate may be prepared by reacting bismuth trioxide with 70% methane sulfonic acid. It has been found that a product bath solution of 200-225 grams of bismuth trimethane sulfonate per liter bismuth is stable only when there is at least 200 grams per liter free methane sulfonic acid in the solution. As the electroplating process proceeds, additional bismuth trimethane sulfonate concentrate may be added to maintain an adequate soluble bismuth content in the bath.
- a soluble bismuth anode is used to recharge the bismuth plating bath so that further additions of bismuth methane sulfonate are minimized or not required during operation.
- the bismuth anode preferably useful in the present invention is constructed of soluble bismuth metal, typically cast high purity bismuth. It has been found useful to bag the soluble bismuth anode with
- bismuth anodes When bismuth anodes are used to supply soluble bismuth, the immersion area of the anodes will have to be regulated to control the solubilization rate to meet plating demand and maintain solution concentration.
- Bismuth anodes generally produce tin- bismuth co-plates having clean grayish white satin finishes.
- the soluble bismuth build-up is preferably minimized by controlling the immersion area of the bismuth anode to provide an anode current density near 110 amp/ft 2 where the anode current efficiency probably becomes sufficiently low to inhibit the solubilization rate of bismuth.
- tin-bismuth co-plates containing 1-2% bismuth useful for inhibiting the growth of tin whiskers and tin pest (allotropic transformation to alpha-tin, the gray cubic form, at 12°C to -70°C or lower) it may be preferable to add bismuth in chelated form to the bath rather than as a sulfonic acid concentrate. When this is done it is ordinarily possible to lower the concentration of free methane sulfonic acid to 150 or even 100 grams per liter.
- chelated bismuth When chelated bismuth is used in the bath as the source of bismuth ions, it also may be possible to substitute tin anodes for the bismuth anodes.
- the following three chelating compounds may be used to provide chelated bismuth to the electrolyte bath:
- concentrations of these bismuth sources in the bath are calculated in the same manner as described for bismuth methanesulfonate except that the free acid concentration may be less
- Ammonium hydroxide (29% NH 3 ) 25 ml A slurry of Bi 2 O 3 and nitrilotriacetate (NTA) is agitated and heated at 80°C for about one hour. The NH 4 OH is added slowly to form a water clear solution. If crystals appear when the solution is cooled to room temperature a little distilled water is added to redissolve them. The solution is near saturation at about 200 grams per liter bismuth. The pH of the solution should be near 6.8 at 25°C. Any residue is removed by filtration through hardened ashless paper. The filtrate may be vacuum evaporated at 26-29 in. Hg and ⁇ 80°C to recover the crystals. The crystals may be vacuum dried at 29 in. Hg and ⁇ 50°C.
- the bismuth content of the crystals is typically 26.4% by analysis.
- the crystals dissolve readily in water to form clear solutions that are stable at pH values at 7.0. Mildly alkaline
- the reactor is a 600 ml thick-walled borosilicate glass
- the water is added first and agitated. Then the DTPA is added to form a white slurry.
- the NH 4 OH is added to dissolve the DTPA. Heating is started.
- the bismuth trioxide is added to form a yellow slurry.
- the solution temperature reaches about 90°C and the solution has a slight haze and a volume of about 300 ml.
- the cover glass is removed to promote evaporation to about 200 ml.
- the solution is cooled to room temperature and filtered at low vacuum through REEVE ANGEL 934 AH glass fibre paper to yield 175 ml clear yellow filtrate typically having a density of 1.54 g/ml at room temperature and analyzing 328 grams per liter bismuth.
- the product concentrate generally has a pH at room temperature of at least 6.0.
- the reactor is a 250 ml thick-walled borosilicate glass beakesr with a magnetic stirrer on a THERMOLYNE STIR-PLATE ® .
- a cover glass and thermometer are available
- the water is added first, followed by the gluconic acid.
- the solution is agitated and heating starts as the bismuth trioxide is added to form a slurry.
- the slurry is heated at about 94°C for nearly 3 hours.
- 70% MSA is then added in increments for another hour. When all of the MSA is added at 86.5°C the solution becomes clear dark red.
- the hydrogen peroxide is added drop wise to oxidize any bismuthite formed and the product solution is cooled to room temperature to yield about 125 ml of slightly viscous dark red solution.
- About 0.5 ml of the product solution is diluted 500/1 with D.I. water and shows no signs of hydrolysis or precipitation.
- the product solution analyzes 174 grams per liter bismuth at a density of 1.518 g/ml at 25°C.
- Soluble tin may be provided to a bath of the present invention by a salt of a tin compound or a tin soluble anode. Either source of tin may be used alone or they may be used together.
- the preferred salts of a tin compound useful in the aqueous acidic electroplating bath of the present invention tin salts of alkyl sulfonic acids, preferably lower alkylsulfonic acids having 1-5 carbon atoms.
- the most preferred salt is stannous methane sulfonate.
- the preferred amount of a tin salt in terms of tin content in the bath of the present invention, ranges from about .05 grams of soluble tin per liter of the bath to about 80 grams of soluble tin per liter of the bath, preferably from about .05 grams of soluble tin per liter of the bath to about 50 grams of soluble tin per liter of the bath,
- a preferred range of stannous methane sulfonate is from about .13 grams per liter to about 208 grams per liter, more preferably from about 0.13 grams per liter to about 104 grams per liter.
- stannous methane sulfonate provide, respectively, from about .05 grams to about 80 grams of soluble tin per liter of bath and from about .05 grams to about 50 grams of soluble tin per liter of bath. Generally, for most commercial purposes, soluble tin concentrations in the bath below about 5 grams per liter will seldom be practical.
- Stannous methane sulfonate is preferably supplied in a concentrate containing about 300 grams per liter stannous tin and 10-30 grams per liter free methane sulfonic acid.
- Stannous methane sulfonate concentrate may be made by reacting stannous oxide with methane sulfonic acid.
- the concentrate may also be formed electrolytically using a tin anode in a membrane cell containing MSA.
- a correlation curve of percent bismuth in satin electroplate (tin-bismuth co-plate, sometimes referred to as alloy plate) as a function of the weight ratio of bismuth to total tin in the bath was derived from analyses of simultaneous samples of tin-bismuth co-plates and the plating bath over a wide range of alloys from about 10% bismuth to about 90% bismuth.
- the bismuth content of the tin-bismuth electro coplates on the cathode panels range from about 3.38% to about 98.48%.
- the weight ratio of bismuth to tin in the baths ranged from about 0.30 to about 9.50 and the weight concentration of total tin plus bismuth spanned about 27 to about 66.5 grams per liter.
- the correlation curve of percent bismuth in the tin- bismuth electro co-plate as a function of the weight ratio of bismuth to total tin in the bath is based on chemical analyses of samples taken through the above mentioned ranges.
- Plating variables other than soluble bismuth and tin content may be adjusted to provide a desired co-plate composition at the desired rate of electrodeposition. The plater could, for
- the illustrated correlation curve is therefore an accurate guide for calculating both concentrations of tin and bismuth for the full range of tin-bismuth alloys and particularly for alloys having 10-90% bismuth in the co-plate.
- composition even at the lowest and highest ranges of bismuth content.
- the method for calculating the bath formulation of the present invention is based on the desired percentage bismuth in the tin-bismuth co-plate.
- the desired total bismuth content of the co-plate are selected.
- the correlation curve may be used to find the weight ratio of bismuth to tin corresponding to the percentage bismuth in the co-plate.
- a soluble tin concentration for the bath is selected and is multiplied by the weight ratio of bismuth to tin to provide the bismuth concentration needed for the bath.
- the volumes of bismuth methane sulfonate concentrate and stannous methane sulfonate concentrate for one liter of the bath may then be calculated according to the respective bismuth and tin analyses of the concentrates.
- the free methane sulfonic acid contributed by the concentrates is subtracted from 250 grams per liter free methane sulfonic acid and the balance is used to calculate the volume of 70% methane sulfonic acid (say at 938 grams per liter 100% MSA) to add before the concentrates.
- the bismuth content of the electroplate is determined by the weight ratio of bismuth to tin in the plating bath. If a broad range of tin concentration of 1-6 oz/gal or 7.5- 45 grams per liter is selected then the bismuth in the bath should range from 0.8-44 oz/gal or 6-330 grams per liter for 5- 58% bismuth in the co-plate. It is preferable to determine the best distribution of tin and bismuth concentrations in the plating bath for a given bismuth content in the electroplate according to the correlation curve.
- the minimum free methane sulfonic acid concentration is from about 200-250 grams per liter and the preferred concentration is near 250 grams per liter.
- the broad range of free methane sulfonic acid concentration however is about 100-400 grams per liter.
- Electroplating baths of the present invention may contain conventional amounts of additives such as surfactants, grain refiners, primary and/or secondary brighteners. Modified aromatic aldehydes (or ketones) and/or modified alkylene oxides or their analogs. These additives may be components of a brightening and leveling system such as BRI-TIN ® and ULTRA STAN-100 ® produced by M & T Chemicals, Inc., formerly the Vulcan Materials Company. The BRI-TIN ® additive system imparts a mirror bright finish to the tm-bismuth co-plate.
- ULTRA STAN-100 ® i.s a system for promoting satin white tin plates having excellent reflowing and solderability characteristics in acid plating baths.
- ULTRA STAN-100 ® and BRI-TIN ® may result in correlation curves similar in form but different in curvature and having different correlation equation constants.
- the conductive substrate or cathode of electroplating cells of the present invention may be any object which is conductive of electricity. Frequently, such objects are composed of metals such as iron, nickel, stainless steel, zinc, copper, or combinations of metals.
- metals such as iron, nickel, stainless steel, zinc, copper, or combinations of metals.
- the foregoing metals are examples of conventional conductive substrates but the spectrum of conductive substrates which may be plated in accordance with the present invention is not limited to the listed metals.
- the anode of electroplating cells of the present invention is preferably a soluble bismuth metal anode that functions as a source of soluble bismuth
- anodes useful in the present invention include tin metal anodes.
- the ratio of anode area to cathode area needs to be
- Bismuth in the range of 1-2% in the tin-bismuth co-plate probably would require a ratio of bismuth anode area to cathode area in the order of 1/10. In that case plating performance might be better if high grade tin anodes are substituted for bismuth anodes, with bismuth added in concentrates according to plating demand and the concentration of free acid in the bath lowered to subtend anode activity.
- an aqueous acidic electroplating bath is prepared in an electroplating vessel known to the art and is circulated vigorously at room temperature (15°C to 25°C).
- An anode preferably soluble bismuth metal anode, which can be wrapped or bagged in polypropylene, is immersed or placed into the bath and the current is turned on.
- a cathode current density from about 2 to about 40 amp/ft 2 should ordinarily be maintained.
- the conductive substrate with an anode area/cathode area ratio adjusted according to desired bismuth content of the tin-bismuth co-plate is then immersed into the aqueous acidic electroplating bath and reciprocated moderately.
- the conductive substrate is immersed in the bath and remains immersed for a time sufficient to deposit a variable alloy coating of tin-bismuth of the desired thickness upon the
- the conductive substrate is subsequently withdrawn from the aqueous acidic electroplating bath.
- the plated conductive substrate should be washed thoroughly as quickly as possible to minimize staining.
- Conductive substrates used for the electrodeposition of bismuth in Examples 1-4 were steel panels (25 cm 2 plating area) from Hull cell panels stripped of zinc electrocoat in 1:1 HCl and activated in 10% methanesulfonic acid at room temperature, with thorough washing with demineralized water after each treatment. The stripped panels then were electroplated with 0.15 - 0.25 ml copper in an acid cupric methane sulfonate bath as described in Table 1 before being electroplated with 0.1 to 1.0 ml bismuth. It was found that the adhesion of the electro copper plate to the steel panel was very much improved by a very short dip (e.g. 5-10 seconds) of the stripped panel in 20-50 grams per liter HNO 3 at room temperature and by very thorough washing before activation in 10% methanesulfonic acid.
- a very short dip e.g. 5-10 seconds
- Table 1 contains a listing of the bath composition for the electroplating of the Hull cell panels with copper and Table 2 contains a listing of the plating conditions and solution characteristics for the bath used to plate the panels with copper.
- Table 3 lists the plating conditions and solution characteristics that were common throughout Examples 1-4.
- electrodeposited alloy coating comprised of 95% Tin/5% Bismuth.
- electrodeposited alloy coating comprised of 90% tin/10% bismuth.
- electrodeposited alloy coating comprised of 42% tin/58% bismuth. This proportion of bismuth to tin comprises a eutectic coating.
- the panels electroplated in the electroplating bath of Table 7 resulted in a conductive substrate with an electrodeposited alloy coating comprised of 14.5% tin/85.5% bismuth.
- Tin-bismuth alloys that may be made in accordance with the present invention include: 1) 42% tin/58% bismuth which forms a eutectic material having a melting point of about 138°C,
- tin-lead eutectic composition approximately 50°C lower than tin-lead eutectic composition; and 2) 25/75 or 16/84 tin-bismuth alloys sandwiched in plastic sheets to make formable metallized plastic.
- Other tin-bismuth alloys may be expected to find utility in many applications previously filled by tin/lead alloys.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Electrolytic Production Of Metals (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims
Priority Applications (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU27277/88A AU632464B2 (en) | 1988-10-14 | 1988-10-14 | A method, bath and cell for the electrodeposition of tin-bismuth alloys |
KR1019900701270A KR960008155B1 (en) | 1988-10-14 | 1988-10-14 | Method for the electrodeposition of tin-bismuth alloys |
DE3889667T DE3889667T2 (en) | 1988-10-14 | 1988-10-14 | ELECTRIC DEPOSITION OF TIN-BISMUT ALLOYS. |
JP63509334A JP2983548B2 (en) | 1988-10-14 | 1988-10-14 | Electroplating of tin-bismuth alloy |
EP88910275A EP0397663B1 (en) | 1988-10-14 | 1988-10-14 | Electrodeposition of tin-bismuth alloys |
BR888807847A BR8807847A (en) | 1988-10-14 | 1988-10-14 | METHOD, BATH AND CELL FOR THE ELECTRODEPOSITION OF TIN-BISMUT ALLOYS |
LU87746A LU87746A1 (en) | 1988-10-14 | 1988-10-14 | A method, bath and cell for the electrodeposition of tin-bismuth alloys |
NL8820893A NL194005C (en) | 1988-10-14 | 1988-10-14 | A method, bath and cell for the electrolytic deposition of tin-bismuth alloys. |
AT88910275T ATE105877T1 (en) | 1988-10-14 | 1988-10-14 | ELECTRONIC STROKE OF TIN-BISMUTH ALLOYS. |
PCT/US1988/003536 WO1990004048A1 (en) | 1988-10-14 | 1988-10-14 | A method, bath and cell for the electrodeposition of tin-bismuth alloys |
DK143590A DK143590A (en) | 1988-10-14 | 1990-06-12 | METHOD, BATH AND CELL FOR ELECTRICAL DISPOSAL OF TIN-BISMUTH ALLOYS |
SE9002096A SE502520C2 (en) | 1988-10-14 | 1990-06-12 | Bathing, method and use in electroplating with tin-bismuth alloys |
NO90902630A NO902630L (en) | 1988-10-14 | 1990-06-13 | PROCEDURE, BATH AND CELL FOR ELECTRICAL DISPOSAL OF TINNVISMUT ALLOYS. |
HK103095A HK103095A (en) | 1988-10-14 | 1995-06-29 | Electrodeposition of tin-bismuth alloys |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1988/003536 WO1990004048A1 (en) | 1988-10-14 | 1988-10-14 | A method, bath and cell for the electrodeposition of tin-bismuth alloys |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1990004048A1 true WO1990004048A1 (en) | 1990-04-19 |
Family
ID=22208944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1988/003536 WO1990004048A1 (en) | 1988-10-14 | 1988-10-14 | A method, bath and cell for the electrodeposition of tin-bismuth alloys |
Country Status (13)
Country | Link |
---|---|
EP (1) | EP0397663B1 (en) |
JP (1) | JP2983548B2 (en) |
KR (1) | KR960008155B1 (en) |
AT (1) | ATE105877T1 (en) |
BR (1) | BR8807847A (en) |
DE (1) | DE3889667T2 (en) |
DK (1) | DK143590A (en) |
HK (1) | HK103095A (en) |
LU (1) | LU87746A1 (en) |
NL (1) | NL194005C (en) |
NO (1) | NO902630L (en) |
SE (1) | SE502520C2 (en) |
WO (1) | WO1990004048A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993007309A1 (en) * | 1991-10-07 | 1993-04-15 | Unisys Corporation | Low temperature tin-bismuth electroplating system |
EP0911428A1 (en) * | 1997-10-22 | 1999-04-28 | Th. Goldschmidt AG | Process for producing bismuth compounds |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003272790A1 (en) | 2002-10-08 | 2004-05-04 | Honeywell International Inc. | Semiconductor packages, lead-containing solders and anodes and methods of removing alpha-emitters from materials |
JP2005002368A (en) * | 2003-06-09 | 2005-01-06 | Ishihara Chem Co Ltd | Tin plating bath for preventing whisker |
DE102005016819B4 (en) * | 2005-04-12 | 2009-10-01 | Dr.-Ing. Max Schlötter GmbH & Co KG | Electrolyte, process for the deposition of tin-bismuth alloy layers and use of the electrolyte |
KR100849439B1 (en) * | 2007-08-13 | 2008-07-30 | 다이섹(주) | Stepper chuck the manufacturing method of exposure apparatus |
JP7508077B2 (en) * | 2019-04-03 | 2024-07-01 | 奥野製薬工業株式会社 | Bi-Sb alloy plating solution for electroplating |
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JPH0781196B2 (en) * | 1986-07-04 | 1995-08-30 | 株式会社大和化成研究所 | Bismuth and bismuth alloy plating baths from organic sulfonates |
-
1988
- 1988-10-14 EP EP88910275A patent/EP0397663B1/en not_active Expired - Lifetime
- 1988-10-14 NL NL8820893A patent/NL194005C/en not_active IP Right Cessation
- 1988-10-14 DE DE3889667T patent/DE3889667T2/en not_active Expired - Fee Related
- 1988-10-14 BR BR888807847A patent/BR8807847A/en not_active IP Right Cessation
- 1988-10-14 WO PCT/US1988/003536 patent/WO1990004048A1/en active IP Right Grant
- 1988-10-14 AT AT88910275T patent/ATE105877T1/en not_active IP Right Cessation
- 1988-10-14 JP JP63509334A patent/JP2983548B2/en not_active Expired - Fee Related
- 1988-10-14 KR KR1019900701270A patent/KR960008155B1/en not_active IP Right Cessation
- 1988-10-14 LU LU87746A patent/LU87746A1/en unknown
-
1990
- 1990-06-12 SE SE9002096A patent/SE502520C2/en not_active IP Right Cessation
- 1990-06-12 DK DK143590A patent/DK143590A/en not_active Application Discontinuation
- 1990-06-13 NO NO90902630A patent/NO902630L/en unknown
-
1995
- 1995-06-29 HK HK103095A patent/HK103095A/en not_active IP Right Cessation
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993007309A1 (en) * | 1991-10-07 | 1993-04-15 | Unisys Corporation | Low temperature tin-bismuth electroplating system |
US5227046A (en) * | 1991-10-07 | 1993-07-13 | Unisys Corporation | Low temperature tin-bismuth electroplating system |
US5308464A (en) * | 1991-10-07 | 1994-05-03 | Unisys Corporation | Low temperature tin-bismuth electroplating system |
EP0911428A1 (en) * | 1997-10-22 | 1999-04-28 | Th. Goldschmidt AG | Process for producing bismuth compounds |
Also Published As
Publication number | Publication date |
---|---|
ATE105877T1 (en) | 1994-06-15 |
NO902630D0 (en) | 1990-06-13 |
HK103095A (en) | 1995-07-07 |
BR8807847A (en) | 1990-11-13 |
EP0397663B1 (en) | 1994-05-18 |
SE502520C2 (en) | 1995-11-06 |
LU87746A1 (en) | 1991-05-07 |
EP0397663A1 (en) | 1990-11-22 |
DE3889667T2 (en) | 1994-10-13 |
KR960008155B1 (en) | 1996-06-20 |
DK143590D0 (en) | 1990-06-12 |
KR900702085A (en) | 1990-12-05 |
DK143590A (en) | 1990-07-27 |
SE9002096D0 (en) | 1990-06-12 |
DE3889667D1 (en) | 1994-06-23 |
SE9002096L (en) | 1990-06-12 |
NL194005C (en) | 2001-04-03 |
NO902630L (en) | 1990-08-06 |
NL194005B (en) | 2000-12-01 |
JPH03503068A (en) | 1991-07-11 |
EP0397663A4 (en) | 1991-01-09 |
JP2983548B2 (en) | 1999-11-29 |
NL8820893A (en) | 1990-10-01 |
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