WO1989006837A1 - Voltage sources - Google Patents

Voltage sources Download PDF

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Publication number
WO1989006837A1
WO1989006837A1 PCT/EP1988/000940 EP8800940W WO8906837A1 WO 1989006837 A1 WO1989006837 A1 WO 1989006837A1 EP 8800940 W EP8800940 W EP 8800940W WO 8906837 A1 WO8906837 A1 WO 8906837A1
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WO
WIPO (PCT)
Prior art keywords
coupled
current
transistor
voltage
output
Prior art date
Application number
PCT/EP1988/000940
Other languages
French (fr)
Inventor
Andreas Rusznyak
Original Assignee
Motorola, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola, Inc. filed Critical Motorola, Inc.
Priority to JP63508408A priority Critical patent/JPH0774977B2/en
Priority to DE88909205T priority patent/DE3886744T2/en
Publication of WO1989006837A1 publication Critical patent/WO1989006837A1/en

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

Definitions

  • This invention relates to voltage sources and particularly to circuits which provide specific voltages which are dependent on the threshold voltage of transistors used in the circuit.
  • Such circuits are particularly useful in the field of CMOS IC's where it is advantageous to provide specific voltages whose values are proportional to the threshold voltage V T of the transistors used therein.
  • Such transistors may be either n- or p-channel field-effect transistors.
  • One application is in logic circuits where threshold voltage dependent voltages are required in order to switch the transistors in the circuit so that logical decisions are made by the circuit.
  • Another application is in sensing amplifiers in which lines connected to the inputs of the amplifier are precharged by voltages proportional to the threshold voltage in order to improve the sensitivity of the amplifier.
  • the invention provides a voltage source circuit comprising a current mirror having an input and an output and coupled to a first reference potential line; a reference current source coupled to the current mirror input; and a bias transistor having a first current electrode coupled to the current mirror output, a second current electrode coupled to a second reference potential line and a control electrode coupled so as to produce at its first current electrode a voltage dependent on the reference current, wherein said current mirror output forms an output of the voltage source circuit.
  • the reference current source comprises a transistor having a first current electrode coupled to said current mirror input, a second current electrode coupled to said second reference potential line and a control electrode for receiving on input reference voltage.
  • control electrode of the bias transistor may be coupled to received either the input reference voltage or the voltage level at the current mirror output, depending on the required output from the voltage source circuit.
  • Figure 1 shows a circuit diagram of a basic embodiment of a voltage source circuit according to the invention.
  • Figure 2 shows a circuit diagram of an improved embodiment of a voltage source circuit according to the invention.
  • Figure 1 shows a circuit diagram of a voltage source circuit providing voltages which are dependent on the threshold voltage of n-channel transistors. It comprises a current mirror composed of p-channel transistors M 2 and M 3 each having one current electrode coupled to a voltage supply line V DD .
  • Transistor M 2 is diode-coupled with its second current electrode coupled to its gate electrode which is also coupled to the gate electrode of transistor M 3 .
  • the input to the current mirror comprises the second current electrode of transistor M 2 which is coupled to the first current electrode of an n-channel transistor M 1 .
  • This transistor has its second current electrode coupled to a ground reference potential line and its gate electrode coupled to receive an input reference voltage V REF .
  • the input reference voltage V REF is arranged to be twice the threshold N T of the n-channel transistors.
  • the output of the current mirror is coupled to the drain of an n-channel bias transistor M 4 , this drain forming the output of the voltage source circuit.
  • the source of transistor M 4 is coupled to the ground reference potential line and the gate of transistor M 4 is connected either to its own drain or the gate electrode of transistor M ] _ depending on the output voltage required from the voltage source circuit.
  • V 4 If the gate electrode of transistor M 4 is coupled to its drain, its drain source voltage V 4 is determined by:
  • the output voltage V 4 can be made to be any predetermined ratio of V T greater than one by appropriately choosing
  • the transistor M 4 can be made to operate in the triode region.
  • the output voltage V 4 can now be made to be lower than the threshold voltage V T by appropriate choices of x, K 1 and K 4 .
  • the ratio V is less than one and by coupling the gate of transistor M 4 to the drain of transistor M 4 , the ratio is greater than one.
  • FIG. 2 One circuit in which a voltage V REF with a value of approximately 2V T is generated is shown in Figure 2.
  • transistors M 1 -M 4 are equivalent to those in Figure 1 and the output voltage is V 4 .
  • the reference voltage V REF V 1 is generated by resistor R and by transistors M 01 , M 02 , connected in series between voltage supply line V DD and reference potential line.
  • the reference voltage V REF will not be exactly 2V T because of transistors M 01 and M 02 which are diode-coupled, across which the voltage will be:
  • I o is the current through the transistors M 01 and
  • Transistors M 5 and M 7 are coupled in series between the ground reference potential line and the output of the current mirror composed of transistors M 2 and M 3 .
  • the gate of transistor M 5 is coupled the gate of transistor M 1 and the gate of transistor M 7 is coupled to the junction between transistors M 01 and M 02 .
  • Transistor M 6 is coupled between the ground reference potential line and the input of the current mirror with its gate coupled to the gate of transistor M 7 .
  • Transistor M 7 has a wide channel and acts as a voltage follower. Its output voltage V 5 is given by:
  • the current I 5 through transistor M 5 operating in the triode region is:
  • I 4 x [I 1 +I 6 ]-I 5 -xK 1 V T 2 (17)

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Abstract

A circuit for generating voltages having values proportional to the threshold voltages (VT) of n-channel transistors used in the circuit comprises a current mirror M2, M3 having a reference current input generated from a reference voltage of value 2VT by an n-channel transistor M1. The output reference voltage of value 2VT by an n-channel transistor M4 whose gate is coupled either to its drain, for output voltages greater than VT, or to the gate of transistor M1 for output voltages less then VT.

Description

Voltage Sources
This invention relates to voltage sources and particularly to circuits which provide specific voltages which are dependent on the threshold voltage of transistors used in the circuit.
Such circuits are particularly useful in the field of CMOS IC's where it is advantageous to provide specific voltages whose values are proportional to the threshold voltage VT of the transistors used therein. Such transistors may be either n- or p-channel field-effect transistors. One application is in logic circuits where threshold voltage dependent voltages are required in order to switch the transistors in the circuit so that logical decisions are made by the circuit. Another application is in sensing amplifiers in which lines connected to the inputs of the amplifier are precharged by voltages proportional to the threshold voltage in order to improve the sensitivity of the amplifier.
Therefore it is an object of the invention to provide a circuit which generates voltages whose values are proportional to the threshold voltage of the transistors used in the circuit.
Accordingly, the invention provides a voltage source circuit comprising a current mirror having an input and an output and coupled to a first reference potential line; a reference current source coupled to the current mirror input; and a bias transistor having a first current electrode coupled to the current mirror output, a second current electrode coupled to a second reference potential line and a control electrode coupled so as to produce at its first current electrode a voltage dependent on the reference current, wherein said current mirror output forms an output of the voltage source circuit.
Preferably the reference current source comprises a transistor having a first current electrode coupled to said current mirror input, a second current electrode coupled to said second reference potential line and a control electrode for receiving on input reference voltage.
As will be more fully described below, the control electrode of the bias transistor may be coupled to received either the input reference voltage or the voltage level at the current mirror output, depending on the required output from the voltage source circuit.
The invention will now be more fully described by way of example with reference to the drawings of which: Figure 1 shows a circuit diagram of a basic embodiment of a voltage source circuit according to the invention; and
Figure 2 shows a circuit diagram of an improved embodiment of a voltage source circuit according to the invention. Thus, Figure 1 shows a circuit diagram of a voltage source circuit providing voltages which are dependent on the threshold voltage of n-channel transistors. It comprises a current mirror composed of p-channel transistors M2 and M3 each having one current electrode coupled to a voltage supply line VDD. Transistor M2 is diode-coupled with its second current electrode coupled to its gate electrode which is also coupled to the gate electrode of transistor M3. The input to the current mirror comprises the second current electrode of transistor M2 which is coupled to the first current electrode of an n-channel transistor M1. This transistor has its second current electrode coupled to a ground reference potential line and its gate electrode coupled to receive an input reference voltage VREF. In this embodiment of the voltage source circuit, the input reference voltage VREF is arranged to be twice the threshold NT of the n-channel transistors. Thus:
(0)
VREF=2 VT
Since the current I through a transistor having a threshold voltage Vm and biased by a voltage V is described by
I=K (V-VT)2
where K is the transistor gain constant, the current through transistor M1 is
I1=K1 (2VT-VT)2=K1 VT 2 (1)
This is the current input to the current mirror and the current output from the mirror through transistor M3 is:
I3 = x I1 = x K1VT 2 (2) where x is a constant determined by the geometry ratios of transistors M2 and M3. The output of the current mirror is coupled to the drain of an n-channel bias transistor M4, this drain forming the output of the voltage source circuit. The source of transistor M4 is coupled to the ground reference potential line and the gate of transistor M4 is connected either to its own drain or the gate electrode of transistor M]_ depending on the output voltage required from the voltage source circuit.
If the gate electrode of transistor M4 is coupled to its drain, its drain source voltage V4 is determined by:
I3=K4 (V4-VT)2 (3)
Rearranging this, gives:
Figure imgf000006_0001
Substituting for I3 from equation (2) gives :
Figure imgf000006_0002
Thus the output voltage V4 can be made to be any predetermined ratio of VT greater than one by appropriately choosing
Figure imgf000006_0003
Similarly, if the gate electrode of transistor M4 is coupled to the gate electrode of transistor M1 , the transistor M4 can be made to operate in the triode region. In this case, the output voltage V4 is given by: I3=K4 [2 (2VT-VT) V4-V4 2 ]
=K4 (2VT V4-V4 2) ( 6 )
Substituting for I3 from equation (2) gives:
Figure imgf000007_0004
whose solution is:
Figure imgf000007_0001
From this it can be seen that the output voltage V4 can now be made to be lower than the threshold voltage VT by appropriate choices of x, K1 and K4. Thus, by coupling the gate of transistor M4 to the gate of the transistor M1, the ratio V is less
Figure imgf000007_0002
than one and by coupling the gate of transistor M4 to the drain of transistor M4, the ratio is greater
Figure imgf000007_0003
than one. Although the above calculations were performed for VREF = 2VT, it will be appreciated that a similar result will be obtained for VREF being any value (n+1) ·VT. In this case:
I1=K1((n+1) VT-VT)2=K1(nVT)2 (9)
so that for the gate of the transistor M4 being coupled to its drain we have, similarly to equations (2) and (3) :
I3 = xI1 = x K1(nVT)2 = K4 (V4 - VT)2 Thus: (V4-VT)2
giving:
Figure imgf000008_0001
so that
Figure imgf000008_0002
To generate a current in transistor M1, n must be greater than zero. However when VREF is generated by diode-connected transistors connected in series, to realise ratios larger than two i.e. three or four or
Figure imgf000008_0004
more, requires higher values of the supply voltage VDD. Therefore a useful compromise is to set VREF = 2VT.
One circuit in which a voltage VREF with a value of approximately 2VT is generated is shown in Figure 2. In this figure transistors M1-M4 are equivalent to those in Figure 1 and the output voltage is V4. The reference voltage VREF = V1 is generated by resistor R and by transistors M01, M02, connected in series between voltage supply line VDD and reference potential line. However, the reference voltage VREF will not be exactly 2VT because of transistors M01 and M02 which are diode-coupled, across which the voltage will be:
Figure imgf000008_0003
where Io is the current through the transistors M01 and
M02 and K0 is their gain constant.
However neither I0 nor K0 can be considered as having constant values since I0 depends on the supply voltage VDD and K0 is a function of process parameters and temperature. In the circuit of Figure 1 and referring to equation (0) the current I3 controlled by voltage V1 would be: ^ 2
Figure imgf000009_0001
Figure imgf000009_0002
This current will be fed to transistor M4. To obtain a precise ratio of equal to
Figure imgf000009_0006
xK1VT 2 the current I3 must therefore be lowered by a value equal to:
Figure imgf000009_0003
As shown in Figure 2, a current of this value can be subtracted from I3 using additional transistors M5, M6 and M7. Transistors M5 and M7 are coupled in series between the ground reference potential line and the output of the current mirror composed of transistors M2 and M3. The gate of transistor M5 is coupled the gate of transistor M1 and the gate of transistor M7 is coupled to the junction between transistors M01 and M02. Transistor M6 is coupled between the ground reference potential line and the input of the current mirror with its gate coupled to the gate of transistor M7.
Transistor M7 has a wide channel and acts as a voltage follower. Its output voltage V5 is given by:
Figure imgf000009_0004
The current I5 through transistor M5 operating in the triode region is:
Figure imgf000009_0005
which gives from equation (13 ) :
Figure imgf000010_0001
By setting:
K5=2xK1
gives :
Figure imgf000010_0002
Now subtracting I5 from I3 gives :
Figure imgf000010_0003
This is close to the required value of xK1VT 2 but still requires the cancellation of the 2
Figure imgf000010_0004
term in order to achieve very high precision for the ratio
Figure imgf000010_0005
This can be achieved by adding to current I1 a current I6 flowing through transistor M6. By setting K6 = 2K1 then:
I4=x [I1+I6]-I5-xK1VT2 (17)
Current I4 flowing through transistor M4 now has the required value and generates a voltage:
Figure imgf000010_0006
if its gate is connected to its drain or:
Figure imgf000010_0007
if its gate is connected to the gate of the transistor M1. The above description refers to an embodiment of the circuit according to the invention in which voltages are generated whose value is proportional to the threshold voltage of the n-channel transistors. To generate voltages proportional to the threshold voltage of the p-channel transistors a circuit complementary to that described above may be used.

Claims

Claims
1. A voltage source circuit comprising: a current mirror having an input and an output and coupled to a first reference potential line; a reference current source coupled to the current mirror input; and a bias transistor having a first current electrode coupled to the current mirror output, a second current electrode coupled to a second reference potential line and a control electrode coupled so as to produce at its first current electrode a voltage dependent on the reference current, wherein said current mirror output forms an output of the voltage source circuit.
2. A voltage source circuit according to claim 1 wherein said reference current source.comprises a transistor having a first current electrode coupled to said current mirror input, a second current input coupled to said second reference potential line and a control electrode for receiving an input reference voltage.
3. A voltage source circuit according to claim 2 wherein said input reference voltage has a value of substantially twice the threshold voltage of the transistor forming the reference current source.
4. A voltage source circuit according to either claim 2 or claim 3 wherein the control electrode of said bias transistor is coupled to receive said input reference voltage.
5. A voltage source circuit according to either claim 2 or claim 3 wherein the control electrode of said bias transistor is coupled to said current mirror output.
6. A voltage source circuit according to claim 3 wherein said input reference voltage is produced at the gate electrode of a first diode-coupled transistor coupled via a second diode-coupled transistor to said first reference potential line.
7. A voltage source circuit according to claim 6 further comprising means for adjusting the currents at the input and output of the current mirror in order to correct the voltage at the output of the voltage source circuit.
8. A voltage source circuit according to claim 7 wherein the adjusting means comprises a first adjusting transistor coupled in series between said current mirror output and the first current electrode of a second adjusting transistor, the second adjusting transistor having a second current electrode coupled to said second reference potential line, and a gate electrode coupled to receive said input reference voltage and the gate electrode of the first adjusting transistor being coupled to the gate electrode of said second diode-coupled transistor, so as to subtract an adjusting current from the current produced at the output of the current mirror.
9. A voltage source circuit according to claim 8 wherein the adjusting means further comprises a third adjusting transistor coupled between the current mirror input and the second reference potential line and whose gate electrode is coupled to the gate electrode of said second diode-coupled transistor so as to add an adjusting current to the current produced by the reference current source.
PCT/EP1988/000940 1988-01-13 1988-10-20 Voltage sources WO1989006837A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63508408A JPH0774977B2 (en) 1988-01-13 1988-10-20 Voltage source
DE88909205T DE3886744T2 (en) 1988-01-13 1988-10-20 VOLTAGE SOURCES.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8800703 1988-01-13
GB8800703A GB2214333B (en) 1988-01-13 1988-01-13 Voltage sources

Publications (1)

Publication Number Publication Date
WO1989006837A1 true WO1989006837A1 (en) 1989-07-27

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PCT/EP1988/000940 WO1989006837A1 (en) 1988-01-13 1988-10-20 Voltage sources

Country Status (6)

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US (1) US5027054A (en)
EP (1) EP0354932B1 (en)
JP (1) JPH0774977B2 (en)
DE (1) DE3886744T2 (en)
GB (1) GB2214333B (en)
WO (1) WO1989006837A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2688904A1 (en) * 1992-03-18 1993-09-24 Samsung Electronics Co Ltd Circuit for generating a reference voltage
US7048859B1 (en) 1998-05-28 2006-05-23 E. I. Du Pont De Nemours And Company Method for treatment of aqueous streams comprising biosolids

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349286A (en) * 1993-06-18 1994-09-20 Texas Instruments Incorporated Compensation for low gain bipolar transistors in voltage and current reference circuits
US5793247A (en) * 1994-12-16 1998-08-11 Sgs-Thomson Microelectronics, Inc. Constant current source with reduced sensitivity to supply voltage and process variation
US5581209A (en) * 1994-12-20 1996-12-03 Sgs-Thomson Microelectronics, Inc. Adjustable current source
US5596297A (en) * 1994-12-20 1997-01-21 Sgs-Thomson Microelectronics, Inc. Output driver circuitry with limited output high voltage
US5598122A (en) * 1994-12-20 1997-01-28 Sgs-Thomson Microelectronics, Inc. Voltage reference circuit having a threshold voltage shift

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US3823332A (en) * 1970-01-30 1974-07-09 Rca Corp Mos fet reference voltage supply
GB2090442A (en) * 1980-12-10 1982-07-07 Suwa Seikosha Kk A low voltage regulation circuit

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Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2688904A1 (en) * 1992-03-18 1993-09-24 Samsung Electronics Co Ltd Circuit for generating a reference voltage
US7048859B1 (en) 1998-05-28 2006-05-23 E. I. Du Pont De Nemours And Company Method for treatment of aqueous streams comprising biosolids

Also Published As

Publication number Publication date
JPH02502136A (en) 1990-07-12
GB2214333A (en) 1989-08-31
EP0354932A1 (en) 1990-02-21
DE3886744D1 (en) 1994-02-10
GB2214333B (en) 1992-01-29
DE3886744T2 (en) 1994-04-28
JPH0774977B2 (en) 1995-08-09
GB8800703D0 (en) 1988-02-10
EP0354932B1 (en) 1993-12-29
US5027054A (en) 1991-06-25

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