WO1987003307A1 - Process for synthesizing diamond - Google Patents
Process for synthesizing diamond Download PDFInfo
- Publication number
- WO1987003307A1 WO1987003307A1 PCT/JP1986/000599 JP8600599W WO8703307A1 WO 1987003307 A1 WO1987003307 A1 WO 1987003307A1 JP 8600599 W JP8600599 W JP 8600599W WO 8703307 A1 WO8703307 A1 WO 8703307A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diamond
- gas
- substrate
- hydrogen
- temperature
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Definitions
- the present invention relates to a method for synthesizing a diamond by a chemical vapor deposition method.
- the conventional methods for synthesizing diamond can be divided into the following raw materials.
- Chemical vapor decomposition method in which hydrocarbon gas is decomposed by the energy of heat, electron beam, plasma, etc. to generate excited carbon atoms and deposit diamond on the substrate.
- Ion beam method in which positive ions of carbon are generated from graphite by discharge technology, accelerated and focused, and collide with the substrate surface to emit a diamond.
- the ion beam method described in 2) -1 has the advantage that a diamond can be formed on the substrate surface at room temperature, but the equipment for generating a carbon ion beam and the focusing equipment are expensive, and the inert gas used for discharging is used. This has the disadvantage that atoms of this type are taken into the diamond film, and i-carbon is also deposited at the same time as the diamond.
- the chemical transport method described in 2)-2 above is a closed pipe method that utilizes hydrocarbons generated by the reaction of graphite and atomic hydrogen in a closed pipe.
- the thickness is limited, and the diamond synthesis conditions such as the concentration of the reaction gas and the heating temperature cannot be controlled independently.
- the present invention solves the above-mentioned drawbacks of the conventional method, enables continuous production, has a wide range of diamond synthesis conditions, and uses a wide range of equipment and raw materials. Is to provide a diamond synthesis method that is inexpensive, has a very large number of types of source gases that can be used, can obtain high-quality diamond, and has a high diamond deposition rate. .
- an organic compound containing oxygen or nitrogen in addition to carbon and hydrogen (hereinafter, sometimes simply referred to as “organic compound”) is gasified and mixed with hydrogen gas, and the mixed gas is subjected to heat, electron beam, After being decomposed by the energy of light or DC glow discharge or AC / DC arc discharge plasma to generate methyl groups and atomic hydrogen, the substrate surface heated to room temperature or higher, preferably 500 to 900-c
- organic compound containing oxygen or nitrogen in addition to carbon and hydrogen
- the feature of the present invention is that a combination of a raw material composed of an organic compound having an oxygen atom or a nitrogen atom (the above-mentioned methanol, ethanol, acetate, methylamine, etc.) and an energy imparting means is used.
- a raw material composed of an organic compound having an oxygen atom or a nitrogen atom the above-mentioned methanol, ethanol, acetate, methylamine, etc.
- an energy imparting means is used.
- the present invention is divided into two inventions according to the type of the organic compound used.
- the mixed gas of the organic compound and hydrogen is decomposed by the energy of thermionic beam, light and glow discharge plasma, direct current and alternating current arc discharge plasma (hereinafter referred to as “plasma”), and methyl groups and atoms are decomposed.
- plasma direct current and alternating current arc discharge plasma
- methyl groups and atoms are decomposed.
- This methyl group maintains a diamond-type structure on the heated substrate surface and prevents double and triple bonds of other carbons.
- the upper limit of the mixing volume ratio of the organic compound and hydrogen is desirably not more than the organic compound hydrogen-1 from the viewpoint of preventing graphite and non-diamond carbon from being precipitated.
- the above ratio is desirably about 0.04 or less.
- the temperature of the heating element is preferably 1500 or more, preferably 2000 or more and 2800 or more.
- the additive include, but are not limited to, tungsten, molybdenum, tantalum, and alloy-based filaments thereof.
- the pressure in the reaction tube in which the substrate is disposed is preferably in the range of 0.01 to: L OOOTorr, and the preferred pressure is 100 to 800 Torr.
- the electron beam applied to the surface of the substrate from which the diamond is deposited preferably has a current density of 1 ⁇ ⁇ or more.
- the wavelength of light is preferably 600 nm or less, preferably 350 nm or less for methyl groups, and 85 nm or less for atomic hydrogen.
- the current density of the discharge is preferably 1 w Zed or more. Normal direct current, alternating current, or high frequency plasma discharge may be used for plasma generation. [Brief description of drawings]
- FIG. 1 is a system diagram showing an example of a pyrolysis diamond synthesizing apparatus according to the method of the present invention
- FIG. 2 is a schematic diagram of an essential part showing an example of an electron beam decomposition diamond synthesizing apparatus
- FIG. 4 is a schematic view of an essential part showing an example of a photolysis diamond synthesizing apparatus
- FIG. 4 is a schematic view of an essential part showing an example of a plasma decomposition diamond synthesizing apparatus
- FIGS. 6 and 7 are scanning electron micrographs showing the surface and cross section of the film-shaped diamond obtained in Example 1, respectively.
- 9 is a scanning electron micrograph showing a granular diamond according to Example 3.
- FIG. 1 is a system diagram in the case of thermal decomposition
- FIG. 2 is a main part in the case of electron beam decomposition
- FIG. 3 is a schematic view of a main part in the case of photolysis
- FIG. 4 is a schematic view of a main part in the case of plasma decomposition.
- 1 is an organic compound and cryogen supply device
- 2 is a heating furnace
- 3 is a substrate support
- 4 is a reaction tube
- 5 is a substrate
- 6 is a ductile filament
- ⁇ is An exhaust device
- 8 indicates an exhaust port
- 9, 10, 11, 12 indicate cocks.
- the mixed gas is introduced from the upper part of the reaction tube 4, and is supplied to the surface of the substrate 5 through a tungsten film 6 set near the substrate support 3. Heat the heating furnace 2 and tungsten filament 6 to a predetermined temperature.
- a metal substrate such as Si
- a ceramic sintered substrate such as SiC, or granular SiC is used.
- reference numeral 13 denotes a DC power supply for generating an electron beam between the tungsten filament 6 and the substrate 5, and other parts corresponding to those in FIG. 1 are denoted by the same reference numerals. I have.
- reference numeral 14 denotes a light source and 15 denotes a translucent window.
- 16 is a plasma source and 17 is an electrode.
- the silicon wafer whose surface was polished was used as the substrate 5 shown in Fig. 1, and a gas mixture of acetate (CH 3 C0CH 3 ) and hydrogen at a ratio of 1:50 (volume ratio) was used as the reaction gas.
- the pressure in the reaction tube 4 was adjusted to 100 Torr, the substrate temperature was raised to 650 ° C, and the temperature of the thermal decomposition tantalum filament 6 to 2000 'c, and the growth was performed for 1 hour.
- Pickers hardness obtained from this film-shaped diamond is 9500 ⁇ : L2000 kg / « 2 , and natural die The value was almost the same as that of the model.
- FIG. 1 The silicon wafer whose surface was polished was used as the substrate 5 shown in Fig. 1, and a gas mixture of acetate (CH 3 C0CH 3 ) and hydrogen at a ratio of 1:50 (volume ratio) was used as the reaction gas.
- the pressure in the reaction tube 4 was adjusted to 100 Torr, the substrate temperature was raised to 650 ° C, and
- FIG. 5 shows a backscattered electron beam diffraction image of this film-shaped diamond. From this diffraction image, it was identified that this was a cubic diamond.
- FIG. 6 is a scanning electron micrograph showing the surface of the film-shaped diamond, and FIG. 7 is a cross-sectional view of the same.
- the silicon wafer whose surface was polished was used as the substrate 5 shown in Fig. 1, and a gas mixture of acetate (CH 3 C0CH 3 ) and hydrogen in a ratio of 1: 100 (volume ratio) was used as the reactive gas. Then, the pressure in the reaction tube 4 was adjusted to 760 Torr (normal pressure), the substrate temperature was set to 600, and the temperature of the tungsten filament 6 for thermal decomposition was set to 2000, and growth was performed for 1 hour. As a result, a film on the substrate 5) !: Approximately 20 film-like diamonds were protruded.
- Figure 1 shows a mirror-finished silicon wafer
- the gas used was a mixture of acetone (CH 3 C0CH 3 ) and hydrogen at a ratio of 1: 100 (by volume) as the reaction gas.
- the pressure inside the reaction tube 4 was adjusted to 100 Torr, The temperature of 650'c and the temperature of tungsten filament 6 were increased to 2000, and the growth was performed for 1 hour. Was observed.
- FIG. 8 is a scanning electron micrograph showing the granular diamond.
- a silicon wafer whose surface was polished was used as a substrate 5 shown in FIG. 1, and methyl acetate (CH 3 C00CH 3 ) and hydrogen were used as reaction gases in 1: 1.
- methyl acetate (CH 3 C00CH 3 ) and hydrogen were used as reaction gases in 1: 1.
- the pressure in the reaction tube 4 was adjusted to 5 O Torr, the substrate temperature was 750, and the temperature of tungsten filament 6 was 2000.
- a film-like diamond having a film thickness of about 10 was observed on the substrate 5.
- Siri co down-wafers were polished surface as a base 5 shown in FIG. 1, ethanol as a reaction gas (C 2 H 5 0H) and hydrogen 1: 500 using a gas in a mixing ratio (by volume) Then, the pressure inside the reaction tube 4 was adjusted to 40 Torr, the substrate temperature was set to 600, the temperature of tungsten filament 6 was increased to 2000 ° C, and the growth was performed for 1 hour. On the substrate 5, deposition of a film-like diamond having a thickness of about 5 was observed.
- the silicon wafer whose surface was polished was used as the substrate 5 shown in Fig. 1.
- Trimethylamine (: (CH 3 ) 3 N] and hydrogen were used as reaction gases in a ratio of 1: 100 (volume ratio).
- the reaction tube The pressure in 4 was adjusted to 5 O Torr, the substrate temperature was increased to 650, and the temperature of tungsten and filament 6 was increased to 2000, and the substrate was grown for 1 hour. At the same time, a film-like diamond with a thickness of about 3 was protruded.
- the silicon wafer whose surface was polished was used as the substrate 5 shown in Fig. 2, and trimethylamine [(CH 3 ) 3 N] and hydrogen were mixed at a ratio of 1: 100 (volume ratio) as reaction gases.
- the pressure inside the reaction tube 4 was adjusted to 5 O Torr using the heated gas, the temperature of the substrate was raised to 550, the temperature of the tungsten filament 6 was raised to 2000, and the electric current was applied to the substrate surface.
- growth was performed for 1 hour by irradiating an electron beam with a density of 10 mA, it was observed that a film-like diamond having a film thickness of about 2 to 3 was formed on the substrate 5.
- a silicon wafer whose surface was polished was used as a substrate 5 shown in FIG. 3, and a diamond was manufactured under the conditions shown in Table 3. Note that two types of lamps were used for the light sources 14. Table 3
- Type of gas Organic compound Base reaction Type of light source Light source Diamond temperature Hydrogen temperature of gas or output of gas and flow rate CO pressure to gas (W) Speed to volume ratio (Torr)
- a silicon * wafer with its surface polished was placed in a discharge device equipped with a counter electrode, and a diamond was grown under the following conditions for 1 hour.
- a diamond was manufactured under the conditions shown in Table 4 using the substrate 5 shown in FIG.
- the diamond deposition speed is several times to several tens times faster than the conventional method, and a high-quality granular or film-like diamond can be obtained.
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3690606A DE3690606C2 (de) | 1985-11-25 | 1986-11-25 | Verfahren zur Synthese von Diamant |
SE8702923A SE460599B (sv) | 1985-11-25 | 1987-07-21 | Syntetiseringsfoerfarande foer diamant genom kemisk aagnfastillvaext |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60/264519 | 1985-11-25 | ||
JP26451985 | 1985-11-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1987003307A1 true WO1987003307A1 (en) | 1987-06-04 |
Family
ID=17404376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1986/000599 WO1987003307A1 (en) | 1985-11-25 | 1986-11-25 | Process for synthesizing diamond |
Country Status (4)
Country | Link |
---|---|
US (1) | US4816286A (ja) |
DE (2) | DE3690606C2 (ja) |
SE (1) | SE460599B (ja) |
WO (1) | WO1987003307A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0305903A1 (en) * | 1987-09-01 | 1989-03-08 | Idemitsu Petrochemical Company Limited | Method for synthesis of diamond and apparatus therefor |
US4938940A (en) * | 1988-01-14 | 1990-07-03 | Yoichi Hirose | Vapor-phase method for synthesis of diamond |
WO1998046812A1 (fr) * | 1997-04-16 | 1998-10-22 | Ooo 'vysokie Tekhnologii' | Procede de production de pellicules de diamant selon la methode de synthese en phase vapeur |
Families Citing this family (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5275798A (en) * | 1986-07-11 | 1994-01-04 | Kyocera Corporation | Method for producing diamond films |
US5225275A (en) * | 1986-07-11 | 1993-07-06 | Kyocera Corporation | Method of producing diamond films |
KR900008505B1 (ko) * | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | 탄소 석출을 위한 마이크로파 강화 cvd 방법 |
US5270029A (en) * | 1987-02-24 | 1993-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Carbon substance and its manufacturing method |
WO1988007599A1 (en) * | 1987-03-23 | 1988-10-06 | Showa Denko Kabushiki Kaisha | Composite diamond particles |
US6083570A (en) * | 1987-03-31 | 2000-07-04 | Lemelson; Jerome H. | Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings |
US5157189A (en) * | 1987-10-19 | 1992-10-20 | Karra Sankaram B | Conversion of light hydrocarbons to higher hydrocarbons |
US5268201A (en) * | 1987-10-20 | 1993-12-07 | Showa Denko Kabushiki Kaisha | Composite diamond grain and method for production thereof |
US5071708A (en) * | 1987-10-20 | 1991-12-10 | Showa Denko K.K. | Composite diamond grain |
US5283087A (en) * | 1988-02-05 | 1994-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
US4981671A (en) * | 1988-02-09 | 1991-01-01 | National Institute For Research In Inorganic Materials | Method for preparing diamond or diamond-like carbon by combustion flame |
US5190824A (en) | 1988-03-07 | 1993-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating |
US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
GB8810111D0 (en) * | 1988-04-28 | 1988-06-02 | Jones B L | Diamond growth |
JPH0288497A (ja) * | 1988-06-09 | 1990-03-28 | Toshiba Corp | 単結晶ダイヤモンド粒子の製造方法 |
JPH02199099A (ja) * | 1988-10-21 | 1990-08-07 | Crystallume | 連続ダイヤモンド薄膜およびその製法 |
US5258206A (en) * | 1989-01-13 | 1993-11-02 | Idemitsu Petrochemical Co., Ltd. | Method and apparatus for producing diamond thin films |
US4948629A (en) * | 1989-02-10 | 1990-08-14 | International Business Machines Corporation | Deposition of diamond films |
US5104634A (en) * | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
US5087434A (en) * | 1989-04-21 | 1992-02-11 | The Pennsylvania Research Corporation | Synthesis of diamond powders in the gas phase |
US5127983A (en) * | 1989-05-22 | 1992-07-07 | Sumitomo Electric Industries, Ltd. | Method of producing single crystal of high-pressure phase material |
US5106452A (en) * | 1989-06-05 | 1992-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of depositing diamond and diamond light emitting device |
JPH0780718B2 (ja) * | 1989-08-04 | 1995-08-30 | トヨタ自動車株式会社 | ダイヤモンドの合成方法および合成装置 |
DE3927135A1 (de) * | 1989-08-17 | 1991-02-21 | Philips Patentverwaltung | Verfahren zur abscheidung mikrokristalliner festkoerperpartikel aus der gasphase mittels chemical vapour deposition |
US5023109A (en) * | 1989-09-06 | 1991-06-11 | General Atomics | Deposition of synthetic diamonds |
US5110579A (en) * | 1989-09-14 | 1992-05-05 | General Electric Company | Transparent diamond films and method for making |
US5273731A (en) * | 1989-09-14 | 1993-12-28 | General Electric Company | Substantially transparent free standing diamond films |
US5206083A (en) * | 1989-09-18 | 1993-04-27 | Cornell Research Foundation, Inc. | Diamond and diamond-like films and coatings prepared by deposition on substrate that contain a dispersion of diamond particles |
US5183602A (en) * | 1989-09-18 | 1993-02-02 | Cornell Research Foundation, Inc. | Infra red diamond composites |
US5242663A (en) * | 1989-09-20 | 1993-09-07 | Sumitomo Electric Industries, Ltd. | Method of and apparatus for synthesizing hard material |
AU634601B2 (en) * | 1989-12-11 | 1993-02-25 | General Electric Company | Single-crystal diamond of very high thermal conductivity |
CA2030049A1 (en) * | 1989-12-11 | 1991-06-12 | Thomas R. Anthony | Single-crystal diamond of very high thermal conductivity |
CA2031098A1 (en) * | 1990-01-16 | 1991-07-17 | William F. Banholzer | Cvd diamond coated annulus components and method of their fabrication |
EP0445754B1 (en) * | 1990-03-06 | 1996-02-14 | Sumitomo Electric Industries, Ltd. | Method for growing a diamond or c-BN thin film |
US5061513A (en) * | 1990-03-30 | 1991-10-29 | Flynn Paul L | Process for depositing hard coating in a nozzle orifice |
US5075094A (en) * | 1990-04-30 | 1991-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Method of growing diamond film on substrates |
US5316795A (en) * | 1990-05-24 | 1994-05-31 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
US5071677A (en) * | 1990-05-24 | 1991-12-10 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
US5264071A (en) * | 1990-06-13 | 1993-11-23 | General Electric Company | Free standing diamond sheet and method and apparatus for making same |
US5360479A (en) * | 1990-07-02 | 1994-11-01 | General Electric Company | Isotopically pure single crystal epitaxial diamond films and their preparation |
US5704976A (en) * | 1990-07-06 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Navy | High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
US6162412A (en) * | 1990-08-03 | 2000-12-19 | Sumitomo Electric Industries, Ltd. | Chemical vapor deposition method of high quality diamond |
EP0470531B1 (en) * | 1990-08-07 | 1994-04-20 | Sumitomo Electric Industries, Ltd. | Diamond synthesizing method |
US5186973A (en) * | 1990-09-13 | 1993-02-16 | Diamonex, Incorporated | HFCVD method for producing thick, adherent and coherent polycrystalline diamonds films |
US5183529A (en) * | 1990-10-29 | 1993-02-02 | Ford Motor Company | Fabrication of polycrystalline free-standing diamond films |
US5397558A (en) * | 1991-03-26 | 1995-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming diamond or diamond containing carbon film |
US5142785A (en) * | 1991-04-26 | 1992-09-01 | The Gillette Company | Razor technology |
US5374414A (en) * | 1991-05-10 | 1994-12-20 | The United States Of America As Represented By The Secretary Of The Navy | Self-supporting diamond filaments |
US5800879A (en) * | 1991-05-16 | 1998-09-01 | Us Navy | Deposition of high quality diamond film on refractory nitride |
US5147687A (en) * | 1991-05-22 | 1992-09-15 | Diamonex, Inc. | Hot filament CVD of thick, adherent and coherent polycrystalline diamond films |
US5232568A (en) * | 1991-06-24 | 1993-08-03 | The Gillette Company | Razor technology |
JPH059735A (ja) * | 1991-07-09 | 1993-01-19 | Kobe Steel Ltd | ダイヤモンドの気相合成方法 |
ZA928617B (en) * | 1991-11-15 | 1993-05-11 | Gillette Co | Shaving system. |
US5669144A (en) * | 1991-11-15 | 1997-09-23 | The Gillette Company | Razor blade technology |
US6592839B2 (en) * | 1991-11-25 | 2003-07-15 | The University Of Chicago | Tailoring nanocrystalline diamond film properties |
US5620512A (en) * | 1993-10-27 | 1997-04-15 | University Of Chicago | Diamond film growth from fullerene precursors |
US5772760A (en) * | 1991-11-25 | 1998-06-30 | The University Of Chicago | Method for the preparation of nanocrystalline diamond thin films |
US5849079A (en) * | 1991-11-25 | 1998-12-15 | The University Of Chicago | Diamond film growth argon-carbon plasmas |
US5989511A (en) * | 1991-11-25 | 1999-11-23 | The University Of Chicago | Smooth diamond films as low friction, long wear surfaces |
US5295305B1 (en) * | 1992-02-13 | 1996-08-13 | Gillette Co | Razor blade technology |
CA2090371A1 (en) * | 1992-03-27 | 1993-09-28 | William Frank Banholzer | Water jet mixing tubes used in water jet cutting devices and method of preparation thereof |
WO1993022482A1 (en) * | 1992-05-04 | 1993-11-11 | Case Western Reserve University | Growth of diamond crystals |
JPH06263595A (ja) * | 1993-03-10 | 1994-09-20 | Canon Inc | ダイヤモンド被覆部材及びその製造方法 |
US5405645A (en) * | 1993-07-28 | 1995-04-11 | Applied Science And Technology Inc. | High growth rate plasma diamond deposition process and method of controlling same |
US5855974A (en) * | 1993-10-25 | 1999-01-05 | Ford Global Technologies, Inc. | Method of producing CVD diamond coated scribing wheels |
US5424096A (en) * | 1994-02-14 | 1995-06-13 | General Electric Company | HF-CVD method for forming diamond |
CA2150739A1 (en) * | 1994-06-14 | 1995-12-15 | Deepak G. Bhat | Method of depositing a composite diamond coating onto a hard substrate |
US5437891A (en) * | 1994-06-23 | 1995-08-01 | General Electric Company | Chemical vapor deposition of polycrystalline diamond with <100> orientation and <100> growth facets |
US5560839A (en) * | 1994-06-27 | 1996-10-01 | Valenite Inc. | Methods of preparing cemented metal carbide substrates for deposition of adherent diamond coatings and products made therefrom |
US6063149A (en) | 1995-02-24 | 2000-05-16 | Zimmer; Jerry W. | Graded grain size diamond layer |
US5714202A (en) * | 1995-06-07 | 1998-02-03 | Lemelson; Jerome H. | Synthetic diamond overlays for gas turbine engine parts having thermal barrier coatings |
US5688557A (en) * | 1995-06-07 | 1997-11-18 | Lemelson; Jerome H. | Method of depositing synthetic diamond coatings with intermediates bonding layers |
US5616372A (en) * | 1995-06-07 | 1997-04-01 | Syndia Corporation | Method of applying a wear-resistant diamond coating to a substrate |
US5871805A (en) * | 1996-04-08 | 1999-02-16 | Lemelson; Jerome | Computer controlled vapor deposition processes |
US8591856B2 (en) * | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
US6681765B2 (en) | 2001-12-18 | 2004-01-27 | Sheree H. Wen | Antiviral and antibacterial respirator mask |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
US7866343B2 (en) * | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
US7866342B2 (en) * | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US6904935B2 (en) | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
US20040154528A1 (en) * | 2003-02-11 | 2004-08-12 | Page Robert E. | Method for making synthetic gems comprising elements recovered from humans or animals and the product thereof |
US20050181210A1 (en) * | 2004-02-13 | 2005-08-18 | Doering Patrick J. | Diamond structure separation |
US20070026205A1 (en) * | 2005-08-01 | 2007-02-01 | Vapor Technologies Inc. | Article having patterned decorative coating |
BRPI0907792A2 (pt) * | 2008-02-29 | 2015-07-14 | Nestec Sa | Produto de confeitaria congelado |
US8961920B1 (en) | 2011-04-26 | 2015-02-24 | Us Synthetic Corporation | Methods of altering the color of a diamond by irradiation and high-pressure/high-temperature processing |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891100A (ja) * | 1981-11-25 | 1983-05-30 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
JPS6033300A (ja) * | 1983-08-04 | 1985-02-20 | Nec Corp | ダイヤモンドの気相合成方法及びその装置 |
JPS60118693A (ja) * | 1983-11-25 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成方法 |
JPS60122796A (ja) * | 1983-12-06 | 1985-07-01 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
JPS60191097A (ja) * | 1984-03-08 | 1985-09-28 | Mitsubishi Metal Corp | 人工ダイヤモンドの析出生成方法 |
JPS61183198A (ja) * | 1984-12-29 | 1986-08-15 | Kyocera Corp | ダイヤモンド膜の製法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ZA704119B (en) * | 1969-07-17 | 1971-03-31 | Texas Instruments Inc | Diamond synthesis |
US3749760A (en) * | 1970-04-24 | 1973-07-31 | V Varnin | Method of producing diamonds |
SE340444B (ja) * | 1970-05-12 | 1971-11-22 | Inst Fizicheskoi Khim An Sssr | |
US3711595A (en) * | 1971-07-22 | 1973-01-16 | R I Patents Inc | Chemical method for producing diamonds and fluorinated diamonds |
DE2310251A1 (de) * | 1973-03-01 | 1974-09-05 | Hermann Dr Behncke | Verfahren zur thermischen spaltung der mehrfachbindungen zwischen kohlenstoff und stickstoff in cyanidgruppen-, resp. nitrilgruppenhaltigen substanzen |
JPS58135117A (ja) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | ダイヤモンドの製造法 |
JPS5927754A (ja) * | 1982-08-04 | 1984-02-14 | Nippon Steel Corp | 非晶質合金薄帯製造用ノズル |
JPS5927753A (ja) * | 1982-08-05 | 1984-02-14 | Nippon Steel Metal Prod Co Ltd | 鋼の鋳造用添加剤の基材の製造方法 |
JPS60186499A (ja) * | 1984-03-05 | 1985-09-21 | Mitsubishi Metal Corp | 人工ダイヤモンドの析出生成方法 |
JPS61151096A (ja) * | 1984-12-25 | 1986-07-09 | Toshiba Corp | ダイヤモンド膜又はダイヤモンド状炭素膜の形成方法 |
JPS61286299A (ja) * | 1985-06-07 | 1986-12-16 | Asahi Chem Ind Co Ltd | ダイヤモンドの製造方法 |
-
1986
- 1986-11-25 DE DE3690606A patent/DE3690606C2/de not_active Expired - Fee Related
- 1986-11-25 US US07/086,770 patent/US4816286A/en not_active Expired - Fee Related
- 1986-11-25 WO PCT/JP1986/000599 patent/WO1987003307A1/ja active Application Filing
- 1986-11-25 DE DE19863690606 patent/DE3690606T/de active Pending
-
1987
- 1987-07-21 SE SE8702923A patent/SE460599B/sv not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891100A (ja) * | 1981-11-25 | 1983-05-30 | Natl Inst For Res In Inorg Mater | ダイヤモンドの合成法 |
JPS6033300A (ja) * | 1983-08-04 | 1985-02-20 | Nec Corp | ダイヤモンドの気相合成方法及びその装置 |
JPS60118693A (ja) * | 1983-11-25 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成方法 |
JPS60122796A (ja) * | 1983-12-06 | 1985-07-01 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相合成法 |
JPS60191097A (ja) * | 1984-03-08 | 1985-09-28 | Mitsubishi Metal Corp | 人工ダイヤモンドの析出生成方法 |
JPS61183198A (ja) * | 1984-12-29 | 1986-08-15 | Kyocera Corp | ダイヤモンド膜の製法 |
Non-Patent Citations (1)
Title |
---|
HYOMENKAGAKU, Vol. 5, No. 1, 1984. SATO YOICHIRO et al., "Diamond no Kisogosei", p. 54-60. * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0305903A1 (en) * | 1987-09-01 | 1989-03-08 | Idemitsu Petrochemical Company Limited | Method for synthesis of diamond and apparatus therefor |
US4938940A (en) * | 1988-01-14 | 1990-07-03 | Yoichi Hirose | Vapor-phase method for synthesis of diamond |
WO1998046812A1 (fr) * | 1997-04-16 | 1998-10-22 | Ooo 'vysokie Tekhnologii' | Procede de production de pellicules de diamant selon la methode de synthese en phase vapeur |
Also Published As
Publication number | Publication date |
---|---|
SE8702923L (sv) | 1987-07-21 |
SE460599B (sv) | 1989-10-30 |
DE3690606C2 (de) | 1995-09-21 |
SE8702923D0 (sv) | 1987-07-21 |
DE3690606T (ja) | 1988-08-25 |
US4816286A (en) | 1989-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO1987003307A1 (en) | Process for synthesizing diamond | |
US5368897A (en) | Method for arc discharge plasma vapor deposition of diamond | |
US4434188A (en) | Method for synthesizing diamond | |
Ferro | Synthesis of diamond | |
EP0324538B1 (en) | Vapor-phase method for synthesis of diamond | |
US5275798A (en) | Method for producing diamond films | |
JPS5927753B2 (ja) | ダイヤモンドの合成法 | |
JPS5927754B2 (ja) | ダイヤモンドの合成法 | |
JPH0288497A (ja) | 単結晶ダイヤモンド粒子の製造方法 | |
JPS61286299A (ja) | ダイヤモンドの製造方法 | |
JPH04958B2 (ja) | ||
JPH0566359B2 (ja) | ||
JPH059735A (ja) | ダイヤモンドの気相合成方法 | |
JPH06316402A (ja) | 光照射併用プラズマcvd法による硬質窒化ホウ素の製造法 | |
JP2646439B2 (ja) | ダイヤモンドの気相合成方法および装置 | |
JP3718822B2 (ja) | ダイヤモンド膜の製造方法 | |
JPS60145995A (ja) | ダイヤモンド状カ−ボンの製造方法 | |
JPS60112698A (ja) | ダイヤモンドの製造方法 | |
JPH0811719B2 (ja) | ダイヤモンド膜の製造方法 | |
JP2006144084A (ja) | 薄膜製造方法 | |
JPH09315890A (ja) | 半導体ダイヤモンドの合成方法 | |
JPS63270393A (ja) | ダイヤモンドの合成方法 | |
JP2636856B2 (ja) | ダイヤモンド薄膜の製造方法 | |
JPS63285192A (ja) | 気相法によるダイヤモンド合成法 | |
JPS63166798A (ja) | ダイヤモンド膜の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): DE JP SE US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 87029237 Country of ref document: SE |
|
WWP | Wipo information: published in national office |
Ref document number: 87029237 Country of ref document: SE |
|
RET | De translation (de og part 6b) |
Ref document number: 3690606 Country of ref document: DE Date of ref document: 19880825 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 3690606 Country of ref document: DE |