UST102801I4 - Silicon solar cell - Google Patents

Silicon solar cell Download PDF

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Publication number
UST102801I4
UST102801I4 US06/412,424 US41242482A UST102801I4 US T102801 I4 UST102801 I4 US T102801I4 US 41242482 A US41242482 A US 41242482A US T102801 I4 UST102801 I4 US T102801I4
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United States
Prior art keywords
base
region
atoms
drift field
junction
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Pending
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US06/412,424
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Harold J. Hovel
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Priority to US06/412,424 priority Critical patent/UST102801I4/en
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Publication of UST102801I4 publication Critical patent/UST102801I4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)

Abstract

A high efficiency silicon solar cell (1) may be constructed by providing a two-stage drift field emitter (4) with a 1 micron thickness on a drift field base region (10) with a back surface field region (12). The stage (7) of the drift field emitter adjacent to the junction (8) is moderately doped from 1018 to 1016 atoms/cc adjacent the junction to minimize bandgap shrinkage and to maximize carrier lifetime while the stage of the emitter adjacent the surface is highly doped at 1019 atoms/cc to minimize sheet resistance. The drift field is aiding in both the emitter and base regions. The size of the base (10) is less than an effective diffusion length. There is a difference in doping level in the base depending on the conductivity type of the silicon. For n-conductivity type the base is doped 1013 atoms/cc at the pn junction, increasing to 1016 atoms/cc in the drift field region. For p-conductivity type the base is doped 1016 at the junction, increasing to 1018 atoms/cc in the drift field. A back surface field is provided adjacent the ohmic contact (3) on the part of the base remote from the junction by doping to 1020 to 1021 atoms/cc. A passivating antireflective layer (30) is added to the light incident surface. The 1 micron emitter region (4) contains a 0.1 to 0.2 μm thick high conducting region (5) adjacent the antireflective coating (30) on the light incident surface and a drift field region (7) 0.3 to 0.9 μm thick. The base region (10) has a drift field region (9) 20 to 100 μm thick and the overall base region (10) is 50 to 450 μm thick. The back surface field region (12) is 1 μm thick.
US06/412,424 1978-12-13 1982-08-30 Silicon solar cell Pending UST102801I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/412,424 UST102801I4 (en) 1978-12-13 1982-08-30 Silicon solar cell

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US96888878A 1978-12-13 1978-12-13
US22936781A 1981-01-29 1981-01-29
US06/412,424 UST102801I4 (en) 1978-12-13 1982-08-30 Silicon solar cell

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US22936781A Continuation 1978-12-13 1981-01-29

Publications (1)

Publication Number Publication Date
UST102801I4 true UST102801I4 (en) 1983-03-01

Family

ID=27397947

Family Applications (1)

Application Number Title Priority Date Filing Date
US06/412,424 Pending UST102801I4 (en) 1978-12-13 1982-08-30 Silicon solar cell

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US (1) UST102801I4 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342451A (en) * 1990-06-07 1994-08-30 Varian Associates, Inc. Semiconductor optical power receiver
US20100037946A1 (en) * 2006-09-27 2010-02-18 Kyocera Corporation Solar Cell Element and Method for Manufacturing Solar Cell Element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342451A (en) * 1990-06-07 1994-08-30 Varian Associates, Inc. Semiconductor optical power receiver
US20100037946A1 (en) * 2006-09-27 2010-02-18 Kyocera Corporation Solar Cell Element and Method for Manufacturing Solar Cell Element
US8975172B2 (en) * 2006-09-27 2015-03-10 Kyocera Corporation Solar cell element and method for manufacturing solar cell element

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