UST101302I4 - Selective reactive ion etching of polycrystalline silicon against monocrystalline silicon - Google Patents

Selective reactive ion etching of polycrystalline silicon against monocrystalline silicon Download PDF

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Publication number
UST101302I4
UST101302I4 US06/249,254 US24925481D UST101302I4 US T101302 I4 UST101302 I4 US T101302I4 US 24925481 D US24925481 D US 24925481D US T101302 I4 UST101302 I4 US T101302I4
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United States
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silicon
reactive ion
ion etching
polycrystalline silicon
monocrystalline silicon
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US06/249,254
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Lawrence E. Forget
Robert A. Gdula
Joseph C. Hollis
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    • H10P50/268—

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Abstract

An improved Reactive Ion Etching (RIE) technique for preferentially etching polysilicon is described as is needed in Very Large Scale Integration (VLSI) using silicon technology. The etch gas is a mixture of carbon tetrafluoride (CF4) and chlorine (Cl2) diluted with inert gas. The pressure of the system is required to be in the range of about 10 to 500 milli Torr. This etch gas allows an RIE process which combines the very desirable features of selectivity (high polycrystalline silicon/monocrystalline silicon etch rate ratio) and directionality which creates substantially vertical sidewalls on the etched features.
US06/249,254 1980-03-17 1981-03-30 Selective reactive ion etching of polycrystalline silicon against monocrystalline silicon Pending UST101302I4 (en)

Applications Claiming Priority (2)

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US13089280A 1980-03-17 1980-03-17
US24925481A 1981-03-30 1981-03-30

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UST101302I4 true UST101302I4 (en) 1981-12-01

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US06/249,254 Pending UST101302I4 (en) 1980-03-17 1981-03-30 Selective reactive ion etching of polycrystalline silicon against monocrystalline silicon

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783494A (en) * 1992-11-30 1998-07-21 Sharp Kabushiki Kaisha Selective dry etching method of undoped and doped silicon thin films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783494A (en) * 1992-11-30 1998-07-21 Sharp Kabushiki Kaisha Selective dry etching method of undoped and doped silicon thin films
US6133157A (en) * 1992-11-30 2000-10-17 Sharp Kabushike Kaisha Dry etching method of a silicon thin film

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