USRE36179E - Switching circuit for selecting an output signal from plural input signals - Google Patents
Switching circuit for selecting an output signal from plural input signals Download PDFInfo
- Publication number
- USRE36179E USRE36179E US08/325,815 US32581594A USRE36179E US RE36179 E USRE36179 E US RE36179E US 32581594 A US32581594 A US 32581594A US RE36179 E USRE36179 E US RE36179E
- Authority
- US
- United States
- Prior art keywords
- switching
- input signals
- switching circuit
- selecting
- output signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Definitions
- the present invention relates to a switching circuit of the monolithic IC type.
- FIG. 2 shows a circuit diagram of the conventional switching circuit.
- Input terminals 1 and 2 receive different voltages V1 and V2, respectively. Either of the received voltages is outputted from an output terminal 5 through corresponding switching transistors 3 and 4.
- the voltages V1 and V2 are inputted into a comparator 6.
- the comparator 6 produces an output which is concurrently applied to a gate of the switching transistor 4 and to a gate of the other switching transistor 3 through an inverter 7.
- the comparator 6 produces an output having a high level so that the switching transistor 4 is turned off or placed in a non-conductive switching state.
- the output of the inverter 7 is held at a low level so that the other switching transistor 3 is turned on or placed on a conductive switching state. Consequently in this condition, the output terminal 5 provides the voltage V1.
- the switching states of the switching transistors 3 and 4 are reversed so that the output terminal 5 provides the voltage V2.
- the comparator 6 and the inverter 7 are powered from the output terminal 5.
- the switching transistor of the MOS type is structurally accompanied with a parasitic diode having an anode coupled to either of the input terminals 1 and 2 and a cathode coupled to the output terminal 5. Therefore, the output terminal 5 receives through the parasitic diode a voltage equal to the higher one of the input voltages minus the voltage drop across the parasitic diode. This voltage is effective to operate the comparator 6 and the inverter 7 to enable the same to turn on and off the switching transistors 3 and 4 to thereby constitute a current path having a voltage drop smaller than the voltage drop across the parasitic diode.
- the output terminal 5 necessarily provides the higher one of the voltages V1 and V2, thereby causing a problem that the floating state cannot be realized.
- an object of the present invention is to provide an improved switching circuit responsive to an external signal to place its output terminal in a floating state.
- a pair of the switching transistors are integrated in the form of MOS transistors on a substrate, and their source region and drain region are electrically separated from the substrate. Further, a diode is formed between each of the input terminals and the substrate. Moreover, controlling circuits such as a comparator are powered through the substrate.
- FIG. 1 is a circuit diagram of the inventive switching circuit
- FIG. 2 is a circuit diagram of the conventional switching circuit.
- FIG. 1 shows a circuit diagram of the monolithic switching circuit according to the invention.
- a pair of input terminals 1 and 2 are connected to an output terminal 5 through switching transistors 3 and 4, respectively.
- the input terminals 1 and 2 are connected also to a comparator 6 in manner similar to the conventional circuit.
- both the source and drain regions of the switching transistors 3 and 4 are electrically separated from a substrate on which the switching transistors 3 and 4 are formed.
- the substrate is connected to a diode 8 having an anode coupled to the input terminal 1, and the substrate is also connected to another diode 9 having an anode coupled to the input terminal 2.
- the substrate is also connected to a power supply line which is connected to .Iadd.a power source terminal 12 connected to .Iaddend.the comparator 6 and a gate circuit 10.
- the gate circuit 10 has one input terminal connected to a control terminal 11 receptive of a control signal and another input terminal connected to an output terminal of the comparator 6.
- the comparator 6, gate circuit 10 and control terminal 11 comprise a control circuit which, as described below, controls the switching states of the switching transistors 3, 4.
- the comparator 6 and the gate circuit 10 are placed in the operative state since electric power is supplied thereto through the diodes 8 and 9, respectively.
- the supplied electric power source voltage .Iadd.applied to the power source terminal 12 .Iaddend. is equal to the higher one of the voltages V1 and V2 minus a voltage drop developed across the corresponding diode.
- the comparator 6 and gate circuit 10 operate according to the relative magnitude difference between the pair of voltages V1 and V2 to selectively turn on and off the switching transistors 3 and 4. In such operation, the control terminal 11 must be held at the high level.
- the inventive switching circuit can be constructed in the form of a monolithic IC integrated with all of the components including a comparator, a gate circuit and diodes, in the form of MOS transistors. Further, the diode is preferable composed of a Shottky barrier diode having a relatively small voltage drop in the forward direction in order to improve performance of the switching circuit.
- a diode is formed between each input terminal and a substrate in which the switching transistor is integrated in the form of a MOS transistor, and control circuits such as a comparator are powered through the substrate.
- control circuits such as a comparator are powered through the substrate.
Abstract
A switching circuit has input terminals, switching MOS transistors, and a control circuit having a control terminal. Diodes are connected between the respective input terminals and the control circuit. When input voltage (V1, V2) are applied to the input terminals, the output terminal is selectively put in either a fixed or a floating state according to the voltage applied to the control terminal.
Description
The present invention relates to a switching circuit of the monolithic IC type.
FIG. 2 shows a circuit diagram of the conventional switching circuit. Input terminals 1 and 2 receive different voltages V1 and V2, respectively. Either of the received voltages is outputted from an output terminal 5 through corresponding switching transistors 3 and 4. The voltages V1 and V2 are inputted into a comparator 6. The comparator 6 produces an output which is concurrently applied to a gate of the switching transistor 4 and to a gate of the other switching transistor 3 through an inverter 7.
In a condition where V1>V2, the comparator 6 produces an output having a high level so that the switching transistor 4 is turned off or placed in a non-conductive switching state. On the other hand, the output of the inverter 7 is held at a low level so that the other switching transistor 3 is turned on or placed on a conductive switching state. Consequently in this condition, the output terminal 5 provides the voltage V1. In a condition where V1<V2, the switching states of the switching transistors 3 and 4 are reversed so that the output terminal 5 provides the voltage V2. The comparator 6 and the inverter 7 are powered from the output terminal 5.
However, in this circuit construction, it is impossible to turn off both of the switching transistors so as to place the output terminal 5 in a floating state. The reason is that the switching transistor of the MOS type is structurally accompanied with a parasitic diode having an anode coupled to either of the input terminals 1 and 2 and a cathode coupled to the output terminal 5. Therefore, the output terminal 5 receives through the parasitic diode a voltage equal to the higher one of the input voltages minus the voltage drop across the parasitic diode. This voltage is effective to operate the comparator 6 and the inverter 7 to enable the same to turn on and off the switching transistors 3 and 4 to thereby constitute a current path having a voltage drop smaller than the voltage drop across the parasitic diode.
For the above described reason, the output terminal 5 necessarily provides the higher one of the voltages V1 and V2, thereby causing a problem that the floating state cannot be realized.
In order to solve the above noted problem of the prior art, an object of the present invention is to provide an improved switching circuit responsive to an external signal to place its output terminal in a floating state.
In realization of the aforesaid object, a pair of the switching transistors are integrated in the form of MOS transistors on a substrate, and their source region and drain region are electrically separated from the substrate. Further, a diode is formed between each of the input terminals and the substrate. Moreover, controlling circuits such as a comparator are powered through the substrate.
FIG. 1 is a circuit diagram of the inventive switching circuit; and
FIG. 2 is a circuit diagram of the conventional switching circuit.
Hereinafter, an embodiment of the invention is described in detail with reference to the drawings. FIG. 1 shows a circuit diagram of the monolithic switching circuit according to the invention. A pair of input terminals 1 and 2 are connected to an output terminal 5 through switching transistors 3 and 4, respectively. The input terminals 1 and 2 are connected also to a comparator 6 in manner similar to the conventional circuit. According to the invention, advantageously both the source and drain regions of the switching transistors 3 and 4 are electrically separated from a substrate on which the switching transistors 3 and 4 are formed. Further, the substrate is connected to a diode 8 having an anode coupled to the input terminal 1, and the substrate is also connected to another diode 9 having an anode coupled to the input terminal 2. Moreover, the substrate is also connected to a power supply line which is connected to .Iadd.a power source terminal 12 connected to .Iaddend.the comparator 6 and a gate circuit 10. The gate circuit 10 has one input terminal connected to a control terminal 11 receptive of a control signal and another input terminal connected to an output terminal of the comparator 6. The comparator 6, gate circuit 10 and control terminal 11 comprise a control circuit which, as described below, controls the switching states of the switching transistors 3, 4.
In operation, when voltages V1 and V2 are applied to the input terminals 1 and 2, respectively, the comparator 6 and the gate circuit 10 are placed in the operative state since electric power is supplied thereto through the diodes 8 and 9, respectively. At this time, the supplied electric power source voltage .Iadd.applied to the power source terminal 12 .Iaddend.is equal to the higher one of the voltages V1 and V2 minus a voltage drop developed across the corresponding diode. Then, the comparator 6 and gate circuit 10 operate according to the relative magnitude difference between the pair of voltages V1 and V2 to selectively turn on and off the switching transistors 3 and 4. In such operation, the control terminal 11 must be held at the high level.
On the other hand, when the control terminal 11 is switched to the low level, the output of the gate circuit 10 is turned to the high level so that the switching transistor 3 is turned off. If the condition V1>V2 is held at this time, the other switching transistor 4 is also turned off to thereby place the output terminal 5 in the floating state.
The inventive switching circuit can be constructed in the form of a monolithic IC integrated with all of the components including a comparator, a gate circuit and diodes, in the form of MOS transistors. Further, the diode is preferable composed of a Shottky barrier diode having a relatively small voltage drop in the forward direction in order to improve performance of the switching circuit.
As described above, according to the present invention, a diode is formed between each input terminal and a substrate in which the switching transistor is integrated in the form of a MOS transistor, and control circuits such as a comparator are powered through the substrate. By such a construction, the pair of switching transistors can be concurrently turned off in response to an external control signal so as to place the output terminal in the floating state in the switching circuit.
Claims (20)
1. A switching circuit for selecting an output signal from a plurality of input signals, comprising: a plurality of input terminals; an output terminal; a plurality of switching devices; a control circuit having a control terminal and a plurality of unidirectionally conductive devices connected between respective ones of the input terminals and the control circuit so that in operation, when voltages are applied to the input terminals, the output terminal is selectively put in a fixed or a floating state according to the voltage applied to the control terminal.
2. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 1; wherein the switching devices comprise MOS transistors.
3. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 1; wherein the unidirectionally conductive devices comprise diodes.
4. A switching circuit from selecting an output signal from a plurality of input signals as claimed in claim 1; wherein the unidirectionally conductive devices are connected between respective ones of the input terminals and a substrate on which are formed the plurality of switching devices.
5. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 4; wherein the . .unidirectionally conductive devices comprise diodes.!. .Iadd.switching devices comprise MOS transistors.Iaddend..
6. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 4; wherein the unidirectionally conductive devices comprise diodes.
7. A switching circuit comprising: plural input terminals to which are applied respective input signals during use of the switching circuit; an output terminal; plural switching means having conductive and non-conductive switching states for selectively switching the input signals to the output terminal; and control circuit means including a control terminal to which a control signal is applied during use of the switching circuit and operative when the control signal has a first voltage level for controlling the switching states applied to the input terminals to thereby place the output terminal in a fixed state corresponding to one of the input signals and operative when the control signal has a second voltage level for placing all the switching means in the non-conductive switching state to thereby place the output terminal in a floating state which is independent of the input signals.
8. A switching circuit according to claim 7; wherein all the switching means comprise electronic switching devices.
9. A switching circuit according to claim 8; wherein the electronic switching devices comprise MOS transistors.
10. A switching circuit according to claim 9; including plural unidirectionally conductive devices connected between respective ones of the input terminals and the control circuit means.
11. A switching circuit according to claim 10; wherein the unidirectionally conductive devices comprise diodes.
12. A switching circuit according to claim 9; including plural unidirectionally conductive devices connected between respective ones of the input terminals and a substrate on which are formed the MOS transistors.
13. A switching circuit according to claim 7; including plural unidirectionally conductive devices connected between respective ones of the input terminals and the control circuit means.
14. A switching circuit according to claim 13; wherein the unidirectionally conductive devices comprise diodes.
15. A switching circuit according to claim 13; wherein the control circuit means comprises a comparator having plural inputs connected to respective ones of the input terminals and an output, and a gate circuit having two inputs, one connected to the comparator output and the other connected to the control terminal, and an output connected to one of the switching means.
16. A switching circuit according to claim 7; wherein the control circuit means comprises a comparator having plural inputs connected to respective ones of the input terminals and an output, and a gate circuit having two inputs, one connected to the comparator output and the other connected to the control terminal, and an output connected to one of the switching means. .Iadd.
17. A switching circuit for selecting an output signal from a plurality of input signals, comprising: plural input terminals to which are applied respective input signals during use of the switching circuit; an output terminal; plural switching devices having conductive and non-conductive switching states for selectively switching the input signals to the output terminal; control circuit means for controlling the switching devices; and plural diodes each having an anode coupled to a respective one of the input terminals and a cathode coupled to a power source terminal of the control circuit means. .Iaddend..Iadd.18. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 17; wherein the control circuit means comprises a comparator having plural inputs connected to respective ones of the input terminals. .Iaddend..Iadd.19. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 17; wherein the switching devices comprise MOS transistors. .Iaddend..Iadd.20. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 19; wherein the MOS transistors each comprise a gate electrode connected to an output of the control circuit means, a source region connected to one of the input terminals, and a drain region
connected to the output terminal. .Iaddend..Iadd.21. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 20; including a substrate on which the MOS transistors are formed; and wherein the cathodes of the diodes are connected to the substrate. .Iaddend..Iadd.22. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 17; wherein the control circuit means has a control terminal receptive of a voltage signal which enables the control circuit means to place the output terminal in a fixed voltage state or a floating voltage state according to the level of the voltage signal. .Iaddend..Iadd.23. A switching circuit for selecting an output signal from a plurality of input signals, comprising: plural input terminals to which are applied respective input signals during use of the switching circuit; an output terminal; plural switching means having conductive and non-conductive switching states for selectively switching the input signals to the output terminal; control circuit means for controlling the switching means; and a plurality of unidirectionally conductive devices connected between respective ones of
the input terminals and the control circuit means. .Iaddend..Iadd.24. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 23; wherein the control circuit means comprises a comparator having plural inputs each connected to a respective one of the input terminals. .Iaddend..Iadd.25. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 23; wherein the unidirectionally conductive devices comprise diodes. .Iaddend..Iadd.26. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 25; wherein each diode has an anode connected to a respective one of the input terminals and a cathode connected to a substrate on which are formed the plurality of switching means. .Iaddend..Iadd.27. A switching circuit for selecting and output signal from a plurality of input signals as claimed in claim 26; wherein the plural switching means comprise MOS transistors formed on the substrate. .Iaddend..Iadd.28. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 27; wherein each of the MOS transistors comprises a gate electrode connected to the control circuit means, a source region connected to one of the input terminals, and a drain region connected to the output terminal.
.Iaddend..Iadd.29. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 26; wherein the control circuit means has a power terminal connected to the cathodes of the diodes. .Iaddend..Iadd.30. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 23; wherein the control circuit means has a power terminal connected to the unidirectionally conductive devices for powering the control circuit means through the unidirectionally conductive devices. .Iaddend..Iadd.31. A switching circuit for selecting an output signal from a plurality of input signals as claimed in claim 30; wherein the control circuit means includes a control terminal to which a voltage signal is applied so that in operation of the switching circuit, when voltages are applied to the input terminals, the output terminal is selectively placed in a fixed voltage state or a floating voltage state according to the level of the applied voltage signal. .Iaddend.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/325,815 USRE36179E (en) | 1990-02-13 | 1994-10-19 | Switching circuit for selecting an output signal from plural input signals |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2-31862 | 1990-02-13 | ||
JP2031862A JP2733796B2 (en) | 1990-02-13 | 1990-02-13 | Switch circuit |
US07/650,463 US5157291A (en) | 1990-02-13 | 1991-02-04 | Switching circuit for selecting an output signal from plural input signals |
US08/325,815 USRE36179E (en) | 1990-02-13 | 1994-10-19 | Switching circuit for selecting an output signal from plural input signals |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/650,463 Reissue US5157291A (en) | 1990-02-13 | 1991-02-04 | Switching circuit for selecting an output signal from plural input signals |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE36179E true USRE36179E (en) | 1999-04-06 |
Family
ID=12342861
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/650,463 Ceased US5157291A (en) | 1990-02-13 | 1991-02-04 | Switching circuit for selecting an output signal from plural input signals |
US08/325,815 Expired - Lifetime USRE36179E (en) | 1990-02-13 | 1994-10-19 | Switching circuit for selecting an output signal from plural input signals |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/650,463 Ceased US5157291A (en) | 1990-02-13 | 1991-02-04 | Switching circuit for selecting an output signal from plural input signals |
Country Status (4)
Country | Link |
---|---|
US (2) | US5157291A (en) |
EP (1) | EP0442688A3 (en) |
JP (1) | JP2733796B2 (en) |
KR (1) | KR0173321B1 (en) |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6208194B1 (en) * | 1998-12-31 | 2001-03-27 | Honeywell International Inc. | Synchronous rectifier MOFSET with controlled channel voltage drop |
US6566935B1 (en) | 1999-08-31 | 2003-05-20 | Stmicroelectronics S.A. | Power supply circuit with a voltage selector |
US20040051384A1 (en) * | 2002-09-13 | 2004-03-18 | Analog Devices, Inc. | Multi-channel power supply selector |
US20040232973A1 (en) * | 2003-05-23 | 2004-11-25 | Kabushiki Kaisha Toshiba | Switch circuit |
US6833739B2 (en) | 1999-01-25 | 2004-12-21 | Fujitsu Limited | Input buffer circuit for semiconductor device |
US20050174152A1 (en) * | 2004-02-10 | 2005-08-11 | Alexander Kushnarenko | High voltage low power driver |
US20050195625A1 (en) * | 2004-03-02 | 2005-09-08 | Yoichi Onoue | Portable photographing apparatus and power switching control method |
US20060056240A1 (en) * | 2004-04-01 | 2006-03-16 | Saifun Semiconductors, Ltd. | Method, circuit and system for erasing one or more non-volatile memory cells |
US20060212137A1 (en) * | 2005-02-25 | 2006-09-21 | Oki Electric Industry Co., Ltd. | Power supply switching circuit, data processing device, and method of controlling data processing device |
US20060285386A1 (en) * | 2005-06-15 | 2006-12-21 | Saifun Semiconductors, Ltd. | Accessing an NROM array |
US20060285408A1 (en) * | 2005-06-17 | 2006-12-21 | Saifun Semiconductors, Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
US20070036007A1 (en) * | 2005-08-09 | 2007-02-15 | Saifun Semiconductors, Ltd. | Sticky bit buffer |
US20070058444A1 (en) * | 2005-09-06 | 2007-03-15 | Saifun Semiconductors, Ltd. | Method and circuit for erasing a non-volatile memory cell |
US20070126482A1 (en) * | 2005-12-06 | 2007-06-07 | Alliance Semiconductor, Inc. | Highest supply selection circuit |
US20070205668A1 (en) * | 2006-03-02 | 2007-09-06 | Tian-Hau Chen | Power switch device |
US7512009B2 (en) | 2001-04-05 | 2009-03-31 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
US20090091186A1 (en) * | 2007-10-09 | 2009-04-09 | International Business Machines Corporation | System and method for multiple sense point voltage regulation |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US7675782B2 (en) | 2002-10-29 | 2010-03-09 | Saifun Semiconductors Ltd. | Method, system and circuit for programming a non-volatile memory array |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US7738304B2 (en) | 2002-07-10 | 2010-06-15 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US7743230B2 (en) | 2003-01-31 | 2010-06-22 | Saifun Semiconductors Ltd. | Memory array programming circuit and a method for using the circuit |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7786512B2 (en) | 2005-07-18 | 2010-08-31 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7964459B2 (en) | 2004-10-14 | 2011-06-21 | Spansion Israel Ltd. | Non-volatile memory structure and method of fabrication |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH057149A (en) * | 1991-06-27 | 1993-01-14 | Fujitsu Ltd | Output circuit |
JP3253389B2 (en) * | 1992-03-31 | 2002-02-04 | 株式会社東芝 | Semiconductor integrated circuit device |
US5426386A (en) * | 1992-04-21 | 1995-06-20 | Benchmarq Microelectronics, Inc. | Low-power semiconductor voltage comparator with hysteresis |
US5341048A (en) * | 1992-11-25 | 1994-08-23 | Altera Corporation | Clock invert and select circuit |
US5341034A (en) * | 1993-02-11 | 1994-08-23 | Benchmarq Microelectronics, Inc. | Backup battery power controller having channel regions of transistors being biased by power supply or battery |
US5323064A (en) * | 1993-04-26 | 1994-06-21 | Raytheon Company | Radio frequency signal frequency converter |
US6031411A (en) * | 1993-06-28 | 2000-02-29 | Texas Instruments Incorporated | Low power substrate bias circuit |
JP2727921B2 (en) * | 1993-08-13 | 1998-03-18 | 日本電気株式会社 | Semiconductor integrated circuit device |
GB2283626B (en) * | 1993-11-05 | 1998-02-18 | Motorola Inc | Driver circuits |
US5594381A (en) * | 1994-04-29 | 1997-01-14 | Maxim Integrated Products | Reverse current prevention method and apparatus and reverse current guarded low dropout circuits |
US5748033A (en) * | 1996-03-26 | 1998-05-05 | Intel Corporation | Differential power bus comparator |
US5689144A (en) * | 1996-05-15 | 1997-11-18 | Siliconix Incorporated | Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance |
US5796274A (en) * | 1996-10-16 | 1998-08-18 | Lockheed Martin Corporation | Fault tolerant MOSFET driver |
FR2755316B1 (en) * | 1996-10-25 | 1999-01-15 | Sgs Thomson Microelectronics | VOLTAGE REGULATOR WITH AUTOMATIC SELECTION OF THE HIGHEST SUPPLY VOLTAGE |
US5933047A (en) * | 1997-04-30 | 1999-08-03 | Mosaid Technologies Incorporated | High voltage generating circuit for volatile semiconductor memories |
JPH1166890A (en) | 1997-08-12 | 1999-03-09 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
EP0961288B1 (en) * | 1998-05-29 | 2004-05-19 | STMicroelectronics S.r.l. | Monolithically integrated selector for electrically programmable memory cells devices |
JP3630574B2 (en) | 1998-12-14 | 2005-03-16 | アルプス電気株式会社 | Reference frequency signal switching circuit |
US6160430A (en) * | 1999-03-22 | 2000-12-12 | Ati International Srl | Powerup sequence artificial voltage supply circuit |
EP1047193B1 (en) | 1999-04-21 | 2007-07-11 | STMicroelectronics S.r.l. | Multiplexer using a comparator |
US6628159B2 (en) * | 1999-09-17 | 2003-09-30 | International Business Machines Corporation | SOI voltage-tolerant body-coupled pass transistor |
US6259304B1 (en) * | 1999-12-28 | 2001-07-10 | Kinpo Electronics, Inc. | Real-time standby voltage adjustment circuit |
US6300816B1 (en) * | 2000-10-24 | 2001-10-09 | Rosun Technologies, Inc. | Feedforward-controlled sense amplifier |
JP2003163589A (en) * | 2001-11-22 | 2003-06-06 | Toshiba Corp | Analog switch circuit with tolerant function |
US6642750B1 (en) * | 2002-04-15 | 2003-11-04 | International Business Machines Corporation | Sequencing circuit for applying a highest voltage source to a chip |
JP3949027B2 (en) * | 2002-08-06 | 2007-07-25 | 富士通株式会社 | Analog switch circuit |
US6753722B1 (en) * | 2003-01-30 | 2004-06-22 | Xilinx, Inc. | Method and apparatus for voltage regulation within an integrated circuit |
US6995599B2 (en) * | 2003-08-26 | 2006-02-07 | Texas Instruments Incorporated | Cross-conduction blocked power selection comparison/control circuitry with NTC (negative temperature coefficient) trip voltage |
US20070069807A1 (en) * | 2005-09-23 | 2007-03-29 | Intel Corporation | Voltage regulation having varying reference during operation |
DE112007000512A5 (en) * | 2006-03-02 | 2009-02-26 | Zentrum Mikroelektronik Dresden Ag | Method for automatic operating voltage detection |
US7498694B2 (en) * | 2006-04-12 | 2009-03-03 | 02Micro International Ltd. | Power management system with multiple power sources |
US7759823B2 (en) * | 2006-08-11 | 2010-07-20 | Panasonic Corporation | Switching device |
US7746154B2 (en) * | 2006-09-27 | 2010-06-29 | Atmel Corporation | Multi-voltage multiplexer system |
US7851947B2 (en) | 2007-11-05 | 2010-12-14 | Qualcomm, Incorporated | Methods and apparatuses for selectable voltage supply |
KR101286241B1 (en) * | 2007-11-26 | 2013-07-15 | 삼성전자주식회사 | Maximum voltage source selector |
EP2511791B1 (en) * | 2011-04-13 | 2018-06-06 | Dialog Semiconductor GmbH | Dual input RTC supply generation with replica power path and autonomous mode of operation from the system supply |
US9729145B2 (en) | 2012-06-12 | 2017-08-08 | Infineon Technologies Ag | Circuit and a method for selecting a power supply |
RU2491624C1 (en) * | 2012-06-26 | 2013-08-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Amplitude filter |
US8901991B2 (en) * | 2013-03-21 | 2014-12-02 | Freescale Semiconductor, Inc. | Power monitoring circuitry |
JP6484924B2 (en) * | 2014-03-28 | 2019-03-20 | 日本電気株式会社 | Power supply device and power supply method |
JP6441619B2 (en) | 2014-09-03 | 2018-12-19 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
US10312684B2 (en) * | 2015-11-18 | 2019-06-04 | Seyed Ali Nabavi Niaki | System and method for intelligent static transfer switch with smart home power management |
US10298228B2 (en) * | 2017-05-12 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiplexer circuit, semiconductor device for multiplexing voltages, and method of operating same |
TWI779423B (en) * | 2020-12-15 | 2022-10-01 | 瑞昱半導體股份有限公司 | Power switching circuit and power switching method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383602A (en) * | 1952-12-05 | 1968-05-14 | Elvin E. Herman | Signal amplitued selector |
US4896061A (en) * | 1988-12-13 | 1990-01-23 | Siemens Aktiengesellschaft | GaAs analog switch cell with wide linear dynamic range from DC to GHz |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51146152A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Signal selection circuit |
JPS5758362A (en) * | 1980-09-26 | 1982-04-08 | Hitachi Ltd | Mos transistor analog switch |
JPS60256999A (en) * | 1984-06-04 | 1985-12-18 | Hitachi Ltd | Semiconductor storage device |
JPS62124700A (en) * | 1985-11-25 | 1987-06-05 | Mitsubishi Electric Corp | Power source switching circuit |
-
1990
- 1990-02-13 JP JP2031862A patent/JP2733796B2/en not_active Expired - Lifetime
-
1991
- 1991-02-04 US US07/650,463 patent/US5157291A/en not_active Ceased
- 1991-02-12 EP EP19910301095 patent/EP0442688A3/en not_active Withdrawn
- 1991-02-13 KR KR1019910002532A patent/KR0173321B1/en not_active IP Right Cessation
-
1994
- 1994-10-19 US US08/325,815 patent/USRE36179E/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383602A (en) * | 1952-12-05 | 1968-05-14 | Elvin E. Herman | Signal amplitued selector |
US4896061A (en) * | 1988-12-13 | 1990-01-23 | Siemens Aktiengesellschaft | GaAs analog switch cell with wide linear dynamic range from DC to GHz |
Non-Patent Citations (4)
Title |
---|
Patent Abstracts of Japan, vol. 1, No. 50, May 16, 1977, p. 3234 E 76 (JP A 5678230). * |
Patent Abstracts of Japan, vol. 1, No. 50, May 16, 1977, p. 3234 E'76 (JP-A-5678230). |
Patent Abstracts of Japan, vol. 5, No. 145 (E 74)(817), Sep. 12, 1981 (JP A 51146152). * |
Patent Abstracts of Japan, vol. 5, No. 145 (E-74)(817), Sep. 12, 1981 (JP-A-51146152). |
Cited By (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6208194B1 (en) * | 1998-12-31 | 2001-03-27 | Honeywell International Inc. | Synchronous rectifier MOFSET with controlled channel voltage drop |
US6833739B2 (en) | 1999-01-25 | 2004-12-21 | Fujitsu Limited | Input buffer circuit for semiconductor device |
US6566935B1 (en) | 1999-08-31 | 2003-05-20 | Stmicroelectronics S.A. | Power supply circuit with a voltage selector |
US7512009B2 (en) | 2001-04-05 | 2009-03-31 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
US7738304B2 (en) | 2002-07-10 | 2010-06-15 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US20040051384A1 (en) * | 2002-09-13 | 2004-03-18 | Analog Devices, Inc. | Multi-channel power supply selector |
US6744151B2 (en) * | 2002-09-13 | 2004-06-01 | Analog Devices, Inc. | Multi-channel power supply selector |
US7675782B2 (en) | 2002-10-29 | 2010-03-09 | Saifun Semiconductors Ltd. | Method, system and circuit for programming a non-volatile memory array |
US7743230B2 (en) | 2003-01-31 | 2010-06-22 | Saifun Semiconductors Ltd. | Memory array programming circuit and a method for using the circuit |
US20040232973A1 (en) * | 2003-05-23 | 2004-11-25 | Kabushiki Kaisha Toshiba | Switch circuit |
US6924694B2 (en) * | 2003-05-23 | 2005-08-02 | Kabushiki Kaisha Toshiba | Switch circuit |
US7176728B2 (en) * | 2004-02-10 | 2007-02-13 | Saifun Semiconductors Ltd | High voltage low power driver |
US20050174152A1 (en) * | 2004-02-10 | 2005-08-11 | Alexander Kushnarenko | High voltage low power driver |
US20050195625A1 (en) * | 2004-03-02 | 2005-09-08 | Yoichi Onoue | Portable photographing apparatus and power switching control method |
US7557467B2 (en) * | 2004-03-02 | 2009-07-07 | Sony Corporation | Portable photographing apparatus and power switching control method |
US20060056240A1 (en) * | 2004-04-01 | 2006-03-16 | Saifun Semiconductors, Ltd. | Method, circuit and system for erasing one or more non-volatile memory cells |
US7652930B2 (en) | 2004-04-01 | 2010-01-26 | Saifun Semiconductors Ltd. | Method, circuit and system for erasing one or more non-volatile memory cells |
US7964459B2 (en) | 2004-10-14 | 2011-06-21 | Spansion Israel Ltd. | Non-volatile memory structure and method of fabrication |
US20060212137A1 (en) * | 2005-02-25 | 2006-09-21 | Oki Electric Industry Co., Ltd. | Power supply switching circuit, data processing device, and method of controlling data processing device |
US7362161B2 (en) * | 2005-02-25 | 2008-04-22 | Oki Electric Industry Co., Ltd. | Power supply switching circuit, data processing device, and method of controlling data processing device |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US8400841B2 (en) | 2005-06-15 | 2013-03-19 | Spansion Israel Ltd. | Device to program adjacent storage cells of different NROM cells |
US20060285386A1 (en) * | 2005-06-15 | 2006-12-21 | Saifun Semiconductors, Ltd. | Accessing an NROM array |
US7184313B2 (en) | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
US20060285408A1 (en) * | 2005-06-17 | 2006-12-21 | Saifun Semiconductors, Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
US7786512B2 (en) | 2005-07-18 | 2010-08-31 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US20070036007A1 (en) * | 2005-08-09 | 2007-02-15 | Saifun Semiconductors, Ltd. | Sticky bit buffer |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US8116142B2 (en) | 2005-09-06 | 2012-02-14 | Infineon Technologies Ag | Method and circuit for erasing a non-volatile memory cell |
US20070058444A1 (en) * | 2005-09-06 | 2007-03-15 | Saifun Semiconductors, Ltd. | Method and circuit for erasing a non-volatile memory cell |
US20070126482A1 (en) * | 2005-12-06 | 2007-06-07 | Alliance Semiconductor, Inc. | Highest supply selection circuit |
US7298181B2 (en) * | 2005-12-06 | 2007-11-20 | Pulsecore Semiconductor Corp. | Highest supply selection circuit |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US20070205668A1 (en) * | 2006-03-02 | 2007-09-06 | Tian-Hau Chen | Power switch device |
US7414330B2 (en) * | 2006-03-02 | 2008-08-19 | Himax Technologies Limited | Power switch device |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US7741736B2 (en) * | 2007-10-09 | 2010-06-22 | International Business Machines Corporation | System and method for multiple sense point voltage regulation |
US20090091186A1 (en) * | 2007-10-09 | 2009-04-09 | International Business Machines Corporation | System and method for multiple sense point voltage regulation |
Also Published As
Publication number | Publication date |
---|---|
EP0442688A3 (en) | 1992-03-04 |
JP2733796B2 (en) | 1998-03-30 |
US5157291A (en) | 1992-10-20 |
KR0173321B1 (en) | 1999-04-01 |
JPH03235517A (en) | 1991-10-21 |
EP0442688A2 (en) | 1991-08-21 |
KR910015119A (en) | 1991-08-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USRE36179E (en) | Switching circuit for selecting an output signal from plural input signals | |
US4736121A (en) | Charge pump circuit for driving N-channel MOS transistors | |
US4754160A (en) | Power supply switching circuit | |
US4992683A (en) | Load driver with reduced dissipation under reverse-battery conditions | |
US6469568B2 (en) | Metal oxide semiconductor transistor circuit and semiconductor integrated circuit using the same | |
US6191615B1 (en) | Logic circuit having reduced power consumption | |
US6184741B1 (en) | Bidirectional charge pump generating either a positive or negative voltage | |
US7332833B2 (en) | Switching circuit for master-slave feeding mode of low voltage power supply | |
US10756628B2 (en) | Switched mode power supply circuit | |
US4727465A (en) | Drive circuit for N-channel power MOS transistors of push-pull stages | |
US20020140466A1 (en) | Output circuit of semiconductor circuit wtih power consumption reduced | |
US5138142A (en) | Ic card with improved power supply switching circuitry | |
US7576396B2 (en) | Synchronous substrate injection clamp | |
KR100918343B1 (en) | Diode circuit | |
JPH08251913A (en) | Switching regulator | |
WO2023107885A1 (en) | Active bootstrapping drivers | |
JPH09130996A (en) | Power source switching equipment | |
JP2864050B2 (en) | Power switching circuit | |
JPH1173800A (en) | Semiconductor device and its testing method | |
US5815029A (en) | Semiconductor circuit and semiconductor circuit device | |
JP2001177387A (en) | Load driver | |
US20040130387A1 (en) | Logic circuitry with reduced standby leakage using charge pumped switches | |
JPH0766700A (en) | Controller for power mosfet | |
JP2000152606A (en) | Control circuit | |
KR100358254B1 (en) | Circuit for switching high voltages on a semiconductor chip, and method of operating the circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |