Connect public, paid and private patent data with Google Patents Public Datasets

Exposure apparatus for production of integrated circuit

Download PDF

Info

Publication number
USRE32795E
USRE32795E US06895132 US89513286A USRE32795E US RE32795 E USRE32795 E US RE32795E US 06895132 US06895132 US 06895132 US 89513286 A US89513286 A US 89513286A US RE32795 E USRE32795 E US RE32795E
Authority
US
Grant status
Grant
Patent type
Prior art keywords
means
stage
illumination
detecting
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US06895132
Inventor
Toshio Matsuura
Kyoichi Suwa
Hisayuki Shimizu
Akikazu Tanimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70058Mask illumination systems
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

An exposure apparatus for production of ICs of the type that includes a stage on which is placed a semiconductor wafer to be exposed by illumination light projecting means, and means for two-dimensionally moving the stage within a plane intersecting the illumination light at substantially right angles. The improvement comprises illumination detection means provided with a photo reception surface, and means for mounting the illumination detection means on the stage in such a manner that the photo reception surface and the surface of the semiconductor wafer on the stage to be exposed are at substantially equal height relative to the stage.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an exposure apparatus for production of integrated circuits (ICs) with an illuminometer for measuring intensity of illumination and/or distribution thereof on the water surface to be exposed by a light source.

2. Description of the Prior Art

The exposure apparatus for production of ICs of the type mentioned above is usually required to have high uniformity of illumination by which the wafer surface is to be exposed. In recent years, the degree of integration of ICs has become higher and higher up to the pattern line width of about 1 μm. With the increase of the integration degree of ICs, the requirement for uniformity of illumination has become more and more severe. The control on the pattern line width is directly affected by irregularity of the illumination. Irregularity of illumination results in irregularity of line width.

Conventionally, the intensity of illumination of the exposure apparatus is measured by an illuminometer. According to the prior art, the illuminometer is disposed in a space between the illumination light projection part (for example, the light projection part of a projection lens system) and the sample stage on which a wafer is placed. Also, to measure the distribution of intensity of illumination with the illuminometer, the illuminometer is mounted on a mounting table having a mechanism for moving the illuminometer one-dimensionally or two-dimensionally. With this prior art arrangement, the intensity of illumination or the distribution thereof actually measured is only that existing between the illumination light projection part and the stage, not the intensity of illumination directly on the part to be actually illuminated, that is, the exposed surface of the wafer on which a pattern is to be printed. This is one of the disadvantages of the prior art exposure apparatus.

To meet the increasing integration degree of ICs, the exposure apparatus recently developed are generally complicated in structure. Because of the complicated structure, some of these known apparatus have no space available for mounting the illuminometer with or without the above mentioned moving mechanism between the light projection part and the stage. In such cases, a characteristic test is carried out beforehand on the illumination system at the time of manufacture of the apparatus to know the intensity of illumination of distribution thereof on the portion to be illuminated by the illumination system. After the preliminary test, all of the components are assembled together into an exposure apparatus for production of ICs. However, since such a preliminary measurement is carried out at a position deviated or completely different from the position of a wafer in the finally completed apparatus, the data of intensity of illumination obtained therefrom are mere relative ones. It is impossible to correctly know the real intensity of illumination or distribution thereof on the exposed surface of any wafer actually placed on the stage at any point in time. This constitutes a second disadvantage of the prior art apparatus.

Furthermore, there is another problem in the prior art apparatus. The output of the lamp at the illumination light projection part decreases gradually with time. Conventionally, the deterioration of the lamp has been judged on the basis of only the lit time thereof. When the lamp has been used for illumination for a certain predetermined time, one judges this to be the end of the life of the lamp. In other words, replacement of the old lamp has conventionally been done based on a mere rough estimate of the useful life of the lamp. Obviously, this method is subject to errors.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the invention to provide an exposure apparatus for production of ICs which enables measurements of the real intensity of illumination and distribution thereof on the exposed surface of a wafer in a very simple manner and at any desired points in time.

It is another object of the invention to provide an exposure apparatus for production of ICs which enables correct judgment of the deterioration of the lamp of the illumination light projection part at any time.

To attain the above and other objects according to the invention there is provided such exposure apparatus for production of ICs which is provided with illumination detecting means mounted on the stage.

Other and further objects, features and advantages of the invention will appear more fully from the following description taken in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side view of an embodiment of the present invention;

FIG. 2 is a plan view of the stage of the apparatus shown in FIG. 1;

FIG. 3 is an enlarged sectional view of the essential part of the apparatus shown in FIG. 1;

FIG. 4 is a graph showing the distribution of intensity of illumination attained by the apparatus;

FIG. 5A is a plan view of a stage showing another embodiment of the invention; and

FIG. 5B is a plan view of a stage showing a further embodiment of the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Referring first to FIG. 1 there is shown an embodiment of the invention formed as a minifying projection exposure apparatus for production of ICs.

Designated by 1 is a condenser lens 1. An IC pattern is on a reticle 2. 3 is a minifying projection lens whose pupil is designated by 4. A stage 5 on which a wafer 6 is placed is movable two-dimensionally. By the illumination light passed through the condenser lens 1, a minified image of an IC pattern on the reticle 2 is projected on the wafer 6 positioned on the stage 5. Thus, the wafer 6 is exposed to the IC pattern on the reticle 2. An illuminometer 7 is embedded in the stage 5. This illuminometer 7 is composed of a photoelectric transducer element such as photo diode.

FIG. 2 is a plan view of the stage 5 as seen from above. The stage 5 can be moved in two-dimensional directions in a plane including the stage surface by means of an X-Y moving mechanism not shown. The two-dimensional position of the stage 5 can be determined in the order of a unit of about 0.02 μm by an X-axis interference range finder 8 and a Y-axis interference range finder 9. The information as to stage position obtained by the range finders 8 and 9 may be used to program control the amount of movement of the stage 5 employing a computer (not shown). In the embodiment shown, the maximum size of the area 10 to be illuminated is in the order of 10 mm×10 mm.

FIG. 3 is an enlarged sectional side view of the illuminometer 7, wafer 6 and stage 5. As seen in FIG. 3, a cap-shaped supporting and masking member 12 is embedded in the stage 5. Within the supporting member 12, the illuminometer 7 is fixed on the inside of the supporting member with its photo reception surface upward. Relative to the wafer supporting surface of the stage 5, the photo reception surface of the illuminometer 7 is maintained at a level substantially equal to the exposed surface of the wafer 6. The supporting and masking member 12 is formed of a material which intercepts the illumination light. But, the supporting member has a pin hole 12a in its top wall small (in order of 0.5 mm in diameter) relative to the area of the photo reception surface of the illuminometer 7 to allow only a limited very small area of the photo reception surface of the illuminometer 7 to be exposed to the illumination light as shown in FIG. 3. The illuminometer 7 converts the light passed through the pin hole 12a into an electric signal whereby the intensity of illumination is measured.

To measure the distribution of illumination, at first the stage 5 is moved up to the position at which the pin hole 12a falls within the area 10 to be illuminated. Thereafter, the stage 5 is moved two-dimensionally in such a manner as to scan the pin hole 12a in the illuminated area 10 while measuring the position of the stage 5 at any time by means of the range finders 8 and 9. Thus, the illumination distribution in the illuminated area 10 can be found from the illumination data obtained by the illuminometer 7 and the corresponding position data obtained by the range finders 8 and 9.

FIG. 4 shows, by way of example, one-dimensional distribution of intensity of illumination as obtained when the illuminometer 7 was one-dimensionally moved in the direction of the arrow within the illuminated area 10. It is obvious that, similarly, two-dimensional distribution of illumination can be found by moving the stage 5 two-dimensionally.

Instead of using interference range finders shown in the above embodiment, other measuring means for obtaining position data, such as linear scale, may be used.

Since the function of the pin hole 12a is to limit the light receivable area of the illuminometer 7 to a very minute area, the resolving power for measuring the distribution of intensity of illumination, that is, the size of the small opening 12a relative to the size of the illuminated area 10 may be suitably selected as desired. The form of the necessary small opening is not limited to a pin hole as shown in the above embodiment. A small opening in the form of a slit having a very small width also may be used for this purpose.

In the above described type of exposure and printing apparatus it is a common practice in the art to control the respective operations of the apparatus by using a computer. Therefore, it is recommended that a program for measuring the illumination distribution be incorporated into the sequential control program of the apparatus. By doing so, it is possible to automatically measure the intensity of illumination and illumination distribution on an exposed surface during the operation of the exposure and printing apparatus at a suitable operation step (for example at the step of wafer replacement). Also, it is possible to know the change of illumination distribution with time. In addition, by moving the stage 5 in such a manner as to move the illuminometer 7 along a diagonal line of the illuminated area 10, there can also be obtained data as to the uniformity of illumination light on the area 10. Such data are obtainable simultaneously with measuring the illumination distribution through a computer processing of the obtained illumination distribution.

The illuminometer may be used also to ascertain the real exposure area of the reticle. To this end, the illuminometer 7 is moved to detect the rise and fall of the illumination distribution characteristic. Since the position of the stage 5 at the rise and that at the fall can be determined by the range finders 8 and 9, the real size of the illuminated area, that is, the size of the real pattern printing area, can be measured in a simple manner. This measurement of the real pattern printing area size is of significance in particular when the effective area of the reticle is very small and the illuminated area on a wafer becomes smaller than the square of 10 mm×10 mm. In this case, a mask is usually used to cover the surrounding area of the reticle against light, leaving only the pattern area of the reticle exposed. The above measurement of the real pattern area size is a very effective method to ascertain whether or not the surrounding area of the reticle is completely covered by an intercepting frame against the illumination light, the frame being designed in such a manner as to open only a pattern area of the reticle.

Obviously many modifications and variations of the present invention are possible in view of the above teachings. The illuminometer shown in the above embodiment may be replaced by other illumination detecting means. FIGS. 5A and 5B show other forms of illumination detecting means used in the invention. Illumination detecting means shown in FIG. 5A is formed as a one-dimensional photo sensor 11. The photo sensor 11 is composed of a number of elements such as photo diodes arranged in a row in a one-dimensional direction. With this one-dimensional photo sensor 11, the intensity of illumination can be measured by moving the stage 5 only in one direction intersecting, at a right angle, the, length of the photo sensor 11.

Illumination detection means shown in FIG. 5B is formed as a two-dimensional photo sensor 13 which is composed of a number of elements such as photo diodes arranged two-dimensionally. With this photo sensor 13, the characteristic of illumination distribution can be found merely by electrically scanning the photo sensor 13 after moving the stage 5 up to the position at which the photo sensor 13 falls within the illuminated area 10.

As for exposure, various types of rays may be used, such as visible light, ultraviolet light and soft X-rays. The illuminometer and the intercepting member in the present invention should be selected suitably according to the wavelength of the rays to be detected.

Claims (14)

We claim:
1. In an exposure apparatus for production of integrated circuits including a stage on which a semiconductor wafer is placed for exposure by illumination light projecting means and means for two-dimensionally displacing said stage in a plane intersecting the illumination light at substantially right angles, an improvement comprising:
illumination detecting means having a photo reception surface; and
means for .Iadd.fixedly .Iaddend.mounting said illumination detecting means on said stage in such manner that said photo reception surface lies substantially at the same level as the exposed surface of said semiconductor wafer on said stage relative to said stage.
2. The improvement as set forth in claim 1, wherein said illumination light projecting means is so mounted as to illuminate a selected area on said stage and wherein said illumination detecting means is mounted out of said selected area on said stage.
3. The improvement as set forth in claim 2 which further comprises means for guiding said illumination detecting means into said selected area.
4. The improvement as set forth in claim 3, wherein said displacing means includes means for detecting the position of said illumination detecting means and means for driving said stage in response to said position detecting means.
5. The improvement as set forth in claim 1, wherein said mounting means includes an intercepting member having an opening therethrough that is very small in area parallel to said plane relative to the area of the photo reception surface parallel to said plane to limit the light receivable area on the photo reception surface of said illumination detecting means.
6. The improvement as set forth in claim 1, wherein said illumination detecting means comprises a one-dimensional photo sensor.
7. The improvement as set forth in claim 1, wherein said illumination detecting means comprises a two-dimensional photo sensor.
8. In an exposure apparatus for production of integrated circuits in which a pattern is illuminated to print an image of the pattern through an optical system onto a surface to be exposed of a semiconductor wafer having predetermined thickness, an improvement comprising:
(a) a stage having a surface for supporting said semiconductor wafer thereon at a predetermined location with said semiconductor wafer surface to be exposed oriented substantially perpendicular to the optical axis of said optical system, the stage being supported to move on a two-dimensional plane substantially orthogonal to said optical axis;
(b) limiting means providing a limited area through which light passes, said limiting means being integral with said stage and positioned at a location on said stage spaced laterally away from said predetermined location;
(c) means detecting the light which passes through said limiting means to convert it into an electric signal, said detecting means .Iadd.being fixedly mounted on said stage and .Iaddend.having a photo reception surface that is at substantially the same level relative to said stage surface as the surface of the semiconductor wafer to be exposed; and
(d) means for detecting the position of said stage on said two-dimensional plane.
9. In an exposure apparatus for production of integrated circuits in which a pattern is illuminated to print an image of the pattern through an optical system onto a surface to be exposed of a semiconductor wafer, an improvement comprising:
(a) a stage on which said semiconductor wafer is supported with said semiconductor wafer surface to be exposed substantially perpendicular to the optical axis of said optical system, the stage being supported to move on a two-dimensional plane substantially orthogonal to said optical axis;
(b) illumination detecting means having a photo reception surface and being provided with an intercepting member having an opening formed therethrough that is very small in area parallel to said plane relative to the area of the photo reception surface parallel to said plane to limit the light receivable area on the photo reception surface, the illumination detecting means including means to support said photo reception surface .Iadd.fixedly .Iaddend.on said stage at a level substantially coincident with the level of said semiconductor wafer surface to be exposed; and
(c) means detecting the position of said stage on said two-dimensional plane.
10. The improvement as set forth in claim 9, wherein said illumination detecting means includes a photoelectric element for detecting the light which passes through said opening to convert it into an electric signal. .Iadd.
11. The improvement as set forth in claim 1, wherein said illumination detecting means is embedded in said stage. .Iaddend. .Iadd.12. The improvement as set forth in claim 8, wherein said detecting means is embedded in said stage. .Iaddend. .Iadd.13. The improvement as set forth in claim 9, wherein said illumination detecting means is embedded in said stage. .Iaddend. .Iadd.14. An exposure apparatus for production of integrated circuits comprising:
(a) illuminating means for illuminating a reticle;
(b) a stage provided with a supporting surface for supporting a wafer on said supporting surface;
(c) moving means for moving said stage on a two-dimensional plane which is parallel to a surface to be exposed of said wafer;
(d) position detecting means for detecting the position of said stage on said two-dimensional plane;
(e) illumination light detecting means having a detection surface; and
(f) mounting means for mounting said illumination light detecting means fixedly on said stage so that said detection surface is substantially at the same level as said surface of the wafer and said illumination light detecting means is out of an area of said stage where said wafer is disposed. .Iaddend. .Iadd.15. An apparatus according to claim 14, wherein said light detecting means is embedded in said stage. .Iaddend. .Iadd.16. An exposure apparatus for production of integrated circuits comprising:
(a) illuminating means for illuminating a reticle, said illuminating means having an optical system for forming a minified image of the illuminated reticle on a predetermined plane so that the size of said image of said reticle is smaller than the size of said reticle;
(b) a stage provided with a supporting surface for supporting a wafer on said supporting surface so that a surface to be exposed of said wafer is substantially at the same level as said predetermined plane;
(c) moving means for moving said stage on a two-dimensional plane which is parallel to said predetermined plane;
(d) position detecting means for detecting the position of said stage on said two-dimensional plane;
(e) light detecting means having a detection surface, said detecting means detecting an intensity of light incident on said detection surface to produce an electric signal conforming to the detected intensity; and
(f) mounting means for mounting said light detecting means fixedly on said stage so that said detection surface is substantially at the same level as said predetermined plane and said detecting means is out of an area of said stage where said wafer is disposed. .Iaddend. .Iadd.17. An apparatus according to claim 16, wherein said light detecting means has a photoelectric conversion element and a light intercepting member provided with an opening, and said photoelectric conversion element is attached to said light intercepting member so that said photoelectric conversion element detects light from said illuminating means through said opening. .Iaddend. .Iadd.18. An apparatus according to claim 17, wherein said stage has the shape of a rectangle and said light detecting means is disposed adjacent to one of the corners of said rectangle. .Iaddend. .Iadd.19. An apparatus according to claim 17, wherein said position detecting means has two interference range finders which measure a position of said stage in two directions which are perpendicular to each other. .Iaddend. .Iadd.20. An apparatus according to claim 16, wherein said light detecting means is embedded in said stage. .Iaddend. .Iadd.21. An exposure apparatus for production of integrated circuits comprising:
(a) illuminating means for illuminating a reticle, said illuminating means having an optical system for forming a minified image of the illuminated reticle on a predetermined plane so that the size of said image of said reticle is smaller than the size of said reticle;
(b) a stage for supporting a wafer thereon so that a surface to be exposed of said wafer is substantially at the same level as said predetermined plane;
(c) moving means for moving said stage on a two-dimensional plane which is parallel to said predetermined plane; and
(d) measuring means for detecting positions of rise and fall of an illumination distribution of the image of said illuminated reticle on said predetermined plane to measure the size of an exposure area corresponding to the image of the illuminated reticle, said measuring means including light detecting means, mounting means for mounting said light detecting means fixedly on said stage, and position detecting means for detecting each of the positions of said stage on said two-dimensional plane, said light detecting means having a detection surface and detecting an intensity of light incident on said detection surface to produce an electric signal conforming to the detected intensity, said mounting means mounting said light detecting means so that said detection surface is substantially at the same level as said predetermined plane and said detecting means is out of an area of said stage where said wafer is
disposed. .Iaddend. .Iadd.22. An apparatus according to claim 21, wherein said light detecting means has a photoelectric conversion element and a light intercepting member provided with an opening, and said photoelectric conversion element is attached to said light intercepting member so that said photoelectric conversion element detects light from said illuminating means through said opening. .Iaddend. .Iadd.23. An apparatus according to claim 22, wherein said stage has the shape of a rectangle and said light detecting means is mounted adjacent to one of the corners of said rectangle. .Iaddend. .Iadd.24. An apparatus according to claim 21, wherein said light detecting means is embedded in said stage. .Iaddend. .Iadd.25. An exposure apparatus for production of integrated circuits comprising:
(a) illuminating means for illuminating a reticle, said illuminating means having an optical system for forming a minified image of the illuminated reticle on a predetermined plane so that the size of said image of said reticle is smaller than the size of said reticle;
(b) a stage provided with a supporting surface for supporting a wafer on said supporting surface so that a surface to be exposed of said wafer is substantially at the same level as said predetermined plane;
(c) moving means for moving said stage on a two-dimensional plane which is parallel to said predetermined plane;
(d) position detecting means for detecting the position of said stage on said two-dimensional plane;
(e) light detecting means having a detection surface, said detecting means detecting an intensity of light incident on said detection surface to produce an electric signal conforming to the detected intensity; and
(f) mounting means for mounting said light detecting means fixedly on said stage so that said detection surface is substantially at the same level as
said predetermined plane. .Iaddend. .Iadd.26. An apparatus according to claim 25, wherein said light detecting means is embedded in said stage. .Iaddend. .Iadd.27. An exposure apparatus for production of integrated circuits comprising:
(a) illuminating means for illuminating a reticle, said illuminating means having an optical system for forming a minified image of the illuminated reticle on a predetermined plane so that the size of said image of said reticle is smaller than the size of said reticle;
(b) a stage for supporting a wafer thereon so that a surface to be exposed of said wafer is substantially at the same level as said predetermined plane;
(c) moving means for moving said stage on a two-dimensional plane which is parallel to said prerdetermined plane; and
(d) measuring means for detecting positions of rise and fall of an illumination distribution image of the illuminated reticle on said predetermined plane to measure the size of an exposure area corresponding to the image of said illuminated reticle, said measuring means including light detecting means, mounting means for mounting said light detecting means fixedly on said stage, and position detecting means for detecting each of the positions of said stage on said two-dimensional plane, said light detecting means having a detection surface and detecting an intensity of light incident on said detection surface to produce an electric signal conforming to the detected intensity, said mounting means mounting said light detecting means so that said detection surface is substantially at the same level as said predetermined plane. .Iaddend.
.Iadd.28. An apparatus according to claim 27, wherein said light detecting means is embedded in said stage. .Iaddend.
US06895132 1981-01-14 1986-08-11 Exposure apparatus for production of integrated circuit Expired - Lifetime USRE32795E (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56-4153 1981-01-14
JP415381A JPH0139207B2 (en) 1981-01-14 1981-01-14

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US06335733 Reissue US4465368A (en) 1981-01-14 1981-12-30 Exposure apparatus for production of integrated circuit

Publications (1)

Publication Number Publication Date
USRE32795E true USRE32795E (en) 1988-12-06

Family

ID=11576807

Family Applications (2)

Application Number Title Priority Date Filing Date
US06335733 Expired - Lifetime US4465368A (en) 1981-01-14 1981-12-30 Exposure apparatus for production of integrated circuit
US06895132 Expired - Lifetime USRE32795E (en) 1981-01-14 1986-08-11 Exposure apparatus for production of integrated circuit

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US06335733 Expired - Lifetime US4465368A (en) 1981-01-14 1981-12-30 Exposure apparatus for production of integrated circuit

Country Status (2)

Country Link
US (2) US4465368A (en)
JP (1) JPH0139207B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631731A (en) * 1994-03-09 1997-05-20 Nikon Precision, Inc. Method and apparatus for aerial image analyzer
US6456377B1 (en) 1997-01-20 2002-09-24 Nikon Corporation Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature
US20070252960A1 (en) * 2004-12-09 2007-11-01 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Producing Method
US20070258072A1 (en) * 2004-06-21 2007-11-08 Nikon Corporation Exposure apparatus, method for cleaning memeber thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US20080106707A1 (en) * 2004-02-04 2008-05-08 Nikon Corporation Exposure Apparatus, Exposure Method, and Method for Producing Device
US20080212043A1 (en) * 2004-10-13 2008-09-04 Hiroyuki Nagasaka Exposure Apparatus, Exposure Method, And Method For Producing Device
US20090115977A1 (en) * 2005-04-18 2009-05-07 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
US20090225286A1 (en) * 2004-06-21 2009-09-10 Nikon Corporation Exposure apparatus, method for cleaning member thereof , maintenance method for exposure apparatus, maintenance device, and method for producing device
US20090226846A1 (en) * 2005-03-30 2009-09-10 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
US20090305150A1 (en) * 2005-04-28 2009-12-10 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US7812925B2 (en) 2003-06-19 2010-10-12 Nikon Corporation Exposure apparatus, and device manufacturing method
US8035795B2 (en) 2003-04-11 2011-10-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine
US8045136B2 (en) 2004-02-02 2011-10-25 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8072576B2 (en) 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US8085381B2 (en) 2003-04-11 2011-12-27 Nikon Corporation Cleanup method for optics in immersion lithography using sonic device
US8330935B2 (en) 2004-01-20 2012-12-11 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US8363206B2 (en) 2006-05-09 2013-01-29 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8520184B2 (en) 2004-06-09 2013-08-27 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device

Families Citing this family (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629313A (en) * 1982-10-22 1986-12-16 Nippon Kogaku K.K. Exposure apparatus
JPH0462167B2 (en) * 1983-02-16 1992-10-05 Hitachi Ltd
NL8401975A (en) * 1983-07-01 1985-02-01 Jenoptik Jena Gmbh An apparatus for testing and processing of semiconductor wafers.
US4585342A (en) * 1984-06-29 1986-04-29 International Business Machines Corporation System for real-time monitoring the characteristics, variations and alignment errors of lithography structures
JPS6153727A (en) * 1984-08-22 1986-03-17 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0652699B2 (en) * 1984-09-13 1994-07-06 株式会社ニコン Exposure apparatus
JPH0548610B2 (en) * 1985-03-20 1993-07-22 Nippon Electric Co
US4725056A (en) * 1985-11-27 1988-02-16 Lumex, Inc. Leg stabilization for a trunk extension/flexion test, rehabilitation and exercise machine
JPS62213123A (en) * 1986-03-14 1987-09-19 Canon Inc Measurement of distribution of intensity of illumination and its equipment
JPS62152433U (en) * 1986-03-19 1987-09-28
JPS63111617A (en) * 1986-10-29 1988-05-16 Mitsubishi Electric Corp Reduction stepper
JPS63119230A (en) * 1986-11-06 1988-05-23 Canon Inc Measuring device for illuminance distribution
JP2571054B2 (en) * 1987-04-28 1997-01-16 キヤノン株式会社 Exposure apparatus and device manufacturing method
JPH0447807B2 (en) * 1987-10-29 1992-08-05 Canon Kk
US5157700A (en) * 1988-09-02 1992-10-20 Canon Kabushiki Kaisha Exposure apparatus for controlling intensity of exposure radiation
JPH0644546B2 (en) * 1989-03-17 1994-06-08 株式会社日立製作所 The exposed surface illuminance distribution measuring method of the projection exposure, the exposed surface illuminance distribution correction method and projection exposure apparatus
US5420417A (en) * 1991-10-08 1995-05-30 Nikon Corporation Projection exposure apparatus with light distribution adjustment
US6078381A (en) * 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3360760B2 (en) * 1993-12-08 2002-12-24 株式会社ニコン Measurement method of exposure unevenness, and exposure method and apparatus
JPH09320945A (en) 1996-05-24 1997-12-12 Nikon Corp Exposure condition measuring method and aligner
JPH1092722A (en) * 1996-09-18 1998-04-10 Nikon Corp Aligner
JP3953460B2 (en) 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic projection apparatus
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10261775A1 (en) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Device for optical measurement of an imaging system
KR20090077827A (en) 2003-04-09 2009-07-15 가부시키가이샤 니콘 Exposure method and apparatus, and device manufacturing method
KR101618419B1 (en) 2003-05-28 2016-05-04 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
KR101290021B1 (en) 2003-06-13 2013-07-30 가부시키가이샤 니콘 Exposure method, substrate stage, exposure apparatus and method for manufacturing device
EP2853943B1 (en) * 2003-07-08 2016-11-16 Nikon Corporation Wafer table for immersion lithography
CN102854755A (en) * 2003-07-09 2013-01-02 株式会社尼康 Exposure apparatus
EP2264534B1 (en) 2003-07-28 2013-07-17 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
KR101421398B1 (en) 2003-09-29 2014-07-18 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device manufacturing method
KR101111364B1 (en) 2003-10-08 2012-02-27 가부시키가이샤 니콘 Substrate carrying apparatus, substrate carrying method, exposure apparatus, exposure method, and method for producing device
CN102360167B (en) 2003-10-09 2015-01-07 株式会社尼康 Exposure apparatus, exposure method, and method for producing device
EP2645407B1 (en) 2003-10-28 2015-08-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
KR101682884B1 (en) * 2003-12-03 2016-12-06 가부시키가이샤 니콘 Exposure apparatus, exposure method, device producing method, and optical component
US8064044B2 (en) 2004-01-05 2011-11-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
KR101227211B1 (en) * 2004-02-03 2013-01-28 가부시키가이샤 니콘 Exposure apparatus and method of producing device
WO2005076323A1 (en) 2004-02-10 2005-08-18 Nikon Corporation Aligner, device manufacturing method, maintenance method and aligning method
US20070258068A1 (en) * 2005-02-17 2007-11-08 Hiroto Horikawa Exposure Apparatus, Exposure Method, and Device Fabricating Method
US20070030467A1 (en) * 2004-02-19 2007-02-08 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method
JP5076497B2 (en) 2004-02-20 2012-11-21 株式会社ニコン Exposure apparatus, supply method and the method of recovering the liquid, the exposure method, and device manufacturing method
US20070201010A1 (en) * 2004-03-25 2007-08-30 Nikon Corporation Exposure Apparatus, Exposure Method, And Device Manufacturing Method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
WO2005104195A1 (en) 2004-04-19 2005-11-03 Nikon Corporation Exposure apparatus and device producing method
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system
CN103558737A (en) 2004-06-09 2014-02-05 尼康股份有限公司 Substrate holding device, exposure apparatus having the same and method for producing a device
EP3067749B1 (en) 2004-06-10 2017-10-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101330922B1 (en) 2004-06-21 2013-11-18 가부시키가이샤 니콘 Exposure equipment and device manufacturing method
WO2006006565A1 (en) 2004-07-12 2006-01-19 Nikon Corporation Exposure equipment and device manufacturing method
KR101354801B1 (en) 2004-08-03 2014-01-22 가부시키가이샤 니콘 Exposure equipment, exposure method and device manufacturing method
EP1791165A1 (en) * 2004-08-05 2007-05-30 Nikon Corporation Stage device and exposure system
EP1801853A4 (en) * 2004-08-18 2008-06-04 Nippon Kogaku Kk Exposure apparatus and device manufacturing method
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
KR20070063505A (en) * 2004-10-08 2007-06-19 가부시키가이샤 니콘 Exposure device and device manufacturing method
EP1806772B1 (en) 2004-10-15 2014-08-06 Nikon Corporation Exposure apparatus and device manufacturing method
EP1811546A4 (en) 2004-11-01 2010-01-06 Nippon Kogaku Kk Exposure apparatus and device producing method
EP1821336A4 (en) 2004-11-18 2011-03-09 Nippon Kogaku Kk Position measurement method, position control method, measurement method, loading method, exposure method, exoposure apparatus, and device production method
JP4555903B2 (en) * 2004-12-02 2010-10-06 株式会社ニコン Exposure apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US8547522B2 (en) * 2005-03-03 2013-10-01 Asml Netherlands B.V. Dedicated metrology stage for lithography applications
US20060219947A1 (en) * 2005-03-03 2006-10-05 Asml Netherlands B.V. Dedicated metrology stage for lithography applications
KR20070115863A (en) * 2005-03-31 2007-12-06 가부시키가이샤 니콘 Exposure method, exposure apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
JP5125505B2 (en) 2005-04-25 2013-01-23 株式会社ニコン Exposure method and an exposure apparatus, and device manufacturing method
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
KR20080007383A (en) 2005-05-24 2008-01-18 가부시키가이샤 니콘 Exposure method, exposure apparatus and device manufacturing method
CN100565799C (en) * 2005-07-11 2009-12-02 株式会社尼康 Exposure apparatus and method for manufacturing device
EP1933371A1 (en) 2005-09-09 2008-06-18 Nikon Corporation Exposure apparatus, exposure method, and device production method
KR20080071552A (en) 2005-12-06 2008-08-04 가부시키가이샤 니콘 Exposure method, exposure apparatus, and method for manufacturing device
CN101300662B (en) 2005-12-28 2012-05-09 株式会社尼康 Pattern forming method, pattern forming apparatus, and device manufacturing method
US8411271B2 (en) 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007094407A1 (en) 2006-02-16 2007-08-23 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method
EP1986223A4 (en) 2006-02-16 2010-08-25 Nippon Kogaku Kk Exposure apparatus, exposing method, and device manufacturing method
JP5177674B2 (en) 2006-02-21 2013-04-03 株式会社ニコン Measuring apparatus and method, a pattern forming apparatus and method, and device manufacturing method
CN101385121B (en) 2006-02-21 2011-04-20 株式会社尼康 Pattern forming apparatus, pattern forming method, mobile object driving system, mobile body driving method, exposure apparatus, exposure method and device manufacturing method
CN101980085B (en) 2006-02-21 2012-11-07 株式会社尼康 Exposure apparatus, exposure method, and device manufacturing method
WO2007135990A1 (en) 2006-05-18 2007-11-29 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
KR20090023335A (en) * 2006-05-22 2009-03-04 가부시키가이샤 니콘 Exposure method and apparatus, maintenance method, and device manufacturing method
WO2007136089A1 (en) 2006-05-23 2007-11-29 Nikon Corporation Maintenance method, exposure method and apparatus, and device manufacturing method
JP5245825B2 (en) 2006-06-30 2013-07-24 株式会社ニコン Maintenance method, exposure method and apparatus, and device manufacturing method
CN101410945B (en) 2006-08-31 2013-03-27 株式会社尼康 Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
KR101648289B1 (en) 2006-08-31 2016-08-12 가부시키가이샤 니콘 Mobile body drive system and mobile body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision method
KR101645909B1 (en) 2006-08-31 2016-08-12 가부시키가이샤 니콘 Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2008029757A1 (en) 2006-09-01 2008-03-13 Nikon Corporation Mobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus, device manufacturing method and calibration method
CN102749813B (en) * 2006-09-01 2014-12-03 株式会社尼康 Exposure method and apparatus, and device manufacturing method
JP5151989B2 (en) * 2006-11-09 2013-02-27 株式会社ニコン Holding device, the position detecting device and an exposure apparatus, and device manufacturing method
JP5055971B2 (en) 2006-11-16 2012-10-24 株式会社ニコン Surface treatment method and surface treatment apparatus, exposure method and apparatus, and device manufacturing method
US20080212047A1 (en) * 2006-12-28 2008-09-04 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
WO2008146819A1 (en) * 2007-05-28 2008-12-04 Nikon Corporation Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method
US8098362B2 (en) 2007-05-30 2012-01-17 Nikon Corporation Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
KR101409149B1 (en) 2007-07-24 2014-06-17 가부시키가이샤 니콘 Mobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus and device manufacturing method
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
EP2187430A4 (en) 2007-07-24 2015-04-15 Nippon Kogaku Kk Position measuring system, exposure device, position measuring method, exposure method, device manufacturing method, tool, and measuring method
US20090051895A1 (en) * 2007-08-24 2009-02-26 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, device manufacturing method, and processing system
US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
US9304412B2 (en) 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
WO2009078443A1 (en) * 2007-12-17 2009-06-25 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP5369443B2 (en) 2008-02-05 2013-12-18 株式会社ニコン Stage apparatus, exposure apparatus, exposure method, and device manufacturing method
US8654306B2 (en) * 2008-04-14 2014-02-18 Nikon Corporation Exposure apparatus, cleaning method, and device fabricating method
EP2128703A1 (en) 2008-05-28 2009-12-02 ASML Netherlands BV Lithographic Apparatus and a Method of Operating the Apparatus
US20100165309A1 (en) * 2008-07-10 2010-07-01 Nikon Corporation Deformation measuring apparatus, exposure apparatus, jig for the deformation measuring apparatus, position measuring method and device fabricating method
NL2003363A (en) 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
JPWO2010050240A1 (en) * 2008-10-31 2012-03-29 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8760629B2 (en) 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8773635B2 (en) 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
WO2010125813A1 (en) * 2009-04-30 2010-11-04 株式会社ニコン Exposure method, method for manufacturing device, and method for measuring superposition error
US8472008B2 (en) * 2009-06-19 2013-06-25 Nikon Corporation Movable body apparatus, exposure apparatus and device manufacturing method
US8294878B2 (en) * 2009-06-19 2012-10-23 Nikon Corporation Exposure apparatus and device manufacturing method
US8355114B2 (en) * 2009-06-19 2013-01-15 Nikon Corporation Exposure apparatus and device manufacturing method
US20110008734A1 (en) 2009-06-19 2011-01-13 Nikon Corporation Exposure apparatus and device manufacturing method
US8355116B2 (en) * 2009-06-19 2013-01-15 Nikon Corporation Exposure apparatus and device manufacturing method
US8446569B2 (en) * 2009-06-19 2013-05-21 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US8488109B2 (en) 2009-08-25 2013-07-16 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
WO2011055860A1 (en) 2009-11-09 2011-05-12 Nikon Corporation Exposure apparatus, exposure method, exposure apparatus maintenance method, exposure apparatus adjustment method and device manufacturing method
US20110164238A1 (en) 2009-12-02 2011-07-07 Nikon Corporation Exposure apparatus and device fabricating method
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US20130016329A1 (en) 2011-07-12 2013-01-17 Nikon Corporation Exposure apparatus, exposure method, measurement method, and device manufacturing method
CN103959049B (en) 2011-11-25 2017-10-10 阿里贝克斯公司 x-ray methods and associated distance indicator
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
US9360772B2 (en) 2011-12-29 2016-06-07 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
US9772564B2 (en) 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
WO2014084229A1 (en) 2012-11-30 2014-06-05 株式会社ニコン Transfer system, exposure apparatus, transfer method, exposure method, device manufacturing method, and suction apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1244159A (en) * 1916-05-13 1917-10-23 Frank W Adsit Photometer.
US3100429A (en) * 1960-07-29 1963-08-13 Koch Carl Photoelectric exposure metering device for photographic darkslide cameras
US3867036A (en) * 1974-04-30 1975-02-18 Us Army Limit display circuit for radiation source analysis
US4205918A (en) * 1977-03-02 1980-06-03 Minolta Camera Kabushiki Kaisha Color balance indicating device
US4320462A (en) * 1980-03-31 1982-03-16 Hughes Aircraft Company High speed laser pulse analyzer
US4345836A (en) * 1979-10-22 1982-08-24 Optimetrix Corporation Two-stage wafer prealignment system for an optical alignment and exposure machine

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052603A (en) * 1974-12-23 1977-10-04 International Business Machines Corporation Object positioning process and apparatus
JPS51126071A (en) * 1975-04-25 1976-11-02 Hitachi Ltd Mask pattern printing method and the equipment
JPS51126073A (en) * 1975-04-25 1976-11-02 Hitachi Ltd Pattern printing equpment made available by photo-etching method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1244159A (en) * 1916-05-13 1917-10-23 Frank W Adsit Photometer.
US3100429A (en) * 1960-07-29 1963-08-13 Koch Carl Photoelectric exposure metering device for photographic darkslide cameras
US3867036A (en) * 1974-04-30 1975-02-18 Us Army Limit display circuit for radiation source analysis
US4205918A (en) * 1977-03-02 1980-06-03 Minolta Camera Kabushiki Kaisha Color balance indicating device
US4345836A (en) * 1979-10-22 1982-08-24 Optimetrix Corporation Two-stage wafer prealignment system for an optical alignment and exposure machine
US4320462A (en) * 1980-03-31 1982-03-16 Hughes Aircraft Company High speed laser pulse analyzer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Blum et al., "Beam Position and Intensity Analyzing Device", IBM Tech. Disc. Bulletin, vol. 12, #10, 3/1970, pp. 1594-1595, copy 356/121.
Blum et al., Beam Position and Intensity Analyzing Device , IBM Tech. Disc. Bulletin, vol. 12, 10, 3/1970, pp. 1594 1595, copy 356/121. *

Cited By (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631731A (en) * 1994-03-09 1997-05-20 Nikon Precision, Inc. Method and apparatus for aerial image analyzer
US5866935A (en) * 1994-03-09 1999-02-02 Nikon Precision, Inc. Tunneling device
US6456377B1 (en) 1997-01-20 2002-09-24 Nikon Corporation Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature
US6825932B2 (en) 1997-01-20 2004-11-30 Nikon Corporation Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature
US8493545B2 (en) 2003-04-11 2013-07-23 Nikon Corporation Cleanup method for optics in immersion lithography supplying cleaning liquid onto a surface of object below optical element, liquid supply port and liquid recovery port
US9329493B2 (en) 2003-04-11 2016-05-03 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8848168B2 (en) 2003-04-11 2014-09-30 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9081298B2 (en) 2003-04-11 2015-07-14 Nikon Corporation Apparatus for maintaining immersion fluid in the gap under the projection lens during wafer exchange using a co-planar member in an immersion lithography machine
US8879047B2 (en) 2003-04-11 2014-11-04 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens using a pad member or second stage during wafer exchange in an immersion lithography machine
US8848166B2 (en) 2003-04-11 2014-09-30 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8351019B2 (en) 2003-04-11 2013-01-08 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8488100B2 (en) 2003-04-11 2013-07-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8670103B2 (en) 2003-04-11 2014-03-11 Nikon Corporation Cleanup method for optics in immersion lithography using bubbles
US8670104B2 (en) 2003-04-11 2014-03-11 Nikon Corporation Cleanup method for optics in immersion lithography with cleaning liquid opposed by a surface of object
US8634057B2 (en) 2003-04-11 2014-01-21 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8610875B2 (en) 2003-04-11 2013-12-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8085381B2 (en) 2003-04-11 2011-12-27 Nikon Corporation Cleanup method for optics in immersion lithography using sonic device
US8514367B2 (en) 2003-04-11 2013-08-20 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8035795B2 (en) 2003-04-11 2011-10-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine
US8269944B2 (en) 2003-04-11 2012-09-18 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8269946B2 (en) 2003-04-11 2012-09-18 Nikon Corporation Cleanup method for optics in immersion lithography supplying cleaning liquid at different times than immersion liquid
US8072576B2 (en) 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US8760617B2 (en) 2003-05-23 2014-06-24 Nikon Corporation Exposure apparatus and method for producing device
US8384877B2 (en) 2003-05-23 2013-02-26 Nikon Corporation Exposure apparatus and method for producing device
US8130363B2 (en) 2003-05-23 2012-03-06 Nikon Corporation Exposure apparatus and method for producing device
US8134682B2 (en) 2003-05-23 2012-03-13 Nikon Corporation Exposure apparatus and method for producing device
US8169592B2 (en) 2003-05-23 2012-05-01 Nikon Corporation Exposure apparatus and method for producing device
US8174668B2 (en) 2003-05-23 2012-05-08 Nikon Corporation Exposure apparatus and method for producing device
US8780327B2 (en) 2003-05-23 2014-07-15 Nikon Corporation Exposure apparatus and method for producing device
US8125612B2 (en) 2003-05-23 2012-02-28 Nikon Corporation Exposure apparatus and method for producing device
US9304392B2 (en) 2003-05-23 2016-04-05 Nikon Corporation Exposure apparatus and method for producing device
US7812925B2 (en) 2003-06-19 2010-10-12 Nikon Corporation Exposure apparatus, and device manufacturing method
US8319941B2 (en) 2003-06-19 2012-11-27 Nikon Corporation Exposure apparatus, and device manufacturing method
US9551943B2 (en) 2003-06-19 2017-01-24 Nikon Corporation Exposure apparatus and device manufacturing method
US8705001B2 (en) 2003-06-19 2014-04-22 Nikon Corporation Exposure apparatus, and device manufacturing method
US9025129B2 (en) 2003-06-19 2015-05-05 Nikon Corporation Exposure apparatus, and device manufacturing method
US8018575B2 (en) 2003-06-19 2011-09-13 Nikon Corporation Exposure apparatus, and device manufacturing method
US9274437B2 (en) 2003-06-19 2016-03-01 Nikon Corporation Exposure apparatus and device manufacturing method
US8436979B2 (en) 2003-06-19 2013-05-07 Nikon Corporation Exposure apparatus, and device manufacturing method
US8436978B2 (en) 2003-06-19 2013-05-07 Nikon Corporation Exposure apparatus, and device manufacturing method
US9019473B2 (en) 2003-06-19 2015-04-28 Nikon Corporation Exposure apparatus and device manufacturing method
US9001307B2 (en) 2003-06-19 2015-04-07 Nikon Corporation Exposure apparatus and device manufacturing method
US8830445B2 (en) 2003-06-19 2014-09-09 Nikon Corporation Exposure apparatus, and device manufacturing method
US8767177B2 (en) 2003-06-19 2014-07-01 Nikon Corporation Exposure apparatus, and device manufacturing method
US8027027B2 (en) 2003-06-19 2011-09-27 Nikon Corporation Exposure apparatus, and device manufacturing method
US8724085B2 (en) 2003-06-19 2014-05-13 Nikon Corporation Exposure apparatus, and device manufacturing method
US8717537B2 (en) 2003-06-19 2014-05-06 Nikon Corporation Exposure apparatus, and device manufacturing method
US9810995B2 (en) 2003-06-19 2017-11-07 Nikon Corporation Exposure apparatus and device manufacturing method
US8692976B2 (en) 2003-06-19 2014-04-08 Nikon Corporation Exposure apparatus, and device manufacturing method
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US8330935B2 (en) 2004-01-20 2012-12-11 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US8045136B2 (en) 2004-02-02 2011-10-25 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8724079B2 (en) 2004-02-02 2014-05-13 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8736808B2 (en) 2004-02-02 2014-05-27 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8705002B2 (en) 2004-02-02 2014-04-22 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8547528B2 (en) 2004-02-02 2013-10-01 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8711328B2 (en) 2004-02-02 2014-04-29 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8553203B2 (en) 2004-02-02 2013-10-08 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US9684248B2 (en) 2004-02-02 2017-06-20 Nikon Corporation Lithographic apparatus having substrate table and sensor table to measure a patterned beam
US9665016B2 (en) 2004-02-02 2017-05-30 Nikon Corporation Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8605252B2 (en) 2004-02-04 2013-12-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080106707A1 (en) * 2004-02-04 2008-05-08 Nikon Corporation Exposure Apparatus, Exposure Method, and Method for Producing Device
US9316921B2 (en) 2004-02-04 2016-04-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US8520184B2 (en) 2004-06-09 2013-08-27 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device
US8525971B2 (en) 2004-06-09 2013-09-03 Nikon Corporation Lithographic apparatus with cleaning of substrate table
US8704997B2 (en) 2004-06-09 2014-04-22 Nikon Corporation Immersion lithographic apparatus and method for rinsing immersion space before exposure
US20100134772A1 (en) * 2004-06-21 2010-06-03 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US20090225286A1 (en) * 2004-06-21 2009-09-10 Nikon Corporation Exposure apparatus, method for cleaning member thereof , maintenance method for exposure apparatus, maintenance device, and method for producing device
US8810767B2 (en) 2004-06-21 2014-08-19 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US20070258072A1 (en) * 2004-06-21 2007-11-08 Nikon Corporation Exposure apparatus, method for cleaning memeber thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US20110051112A1 (en) * 2004-10-13 2011-03-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080212043A1 (en) * 2004-10-13 2008-09-04 Hiroyuki Nagasaka Exposure Apparatus, Exposure Method, And Method For Producing Device
US7852456B2 (en) 2004-10-13 2010-12-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070252960A1 (en) * 2004-12-09 2007-11-01 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Producing Method
US8913224B2 (en) 2004-12-09 2014-12-16 Nixon Corporation Exposure apparatus, exposure method, and device producing method
US8035799B2 (en) 2004-12-09 2011-10-11 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US20090226846A1 (en) * 2005-03-30 2009-09-10 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8724077B2 (en) 2005-04-18 2014-05-13 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20090115977A1 (en) * 2005-04-18 2009-05-07 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
EP2527921A2 (en) 2005-04-28 2012-11-28 Nikon Corporation Exposure method and exposure apparatus
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8941812B2 (en) 2005-04-28 2015-01-27 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US20090305150A1 (en) * 2005-04-28 2009-12-10 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8363206B2 (en) 2006-05-09 2013-01-29 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US9810996B2 (en) 2006-05-09 2017-11-07 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation

Also Published As

Publication number Publication date Type
US4465368A (en) 1984-08-14 grant
JPS57117238A (en) 1982-07-21 application
JPH0139207B2 (en) 1989-08-18 grant
JP1679282C (en) grant

Similar Documents

Publication Publication Date Title
US5898477A (en) Exposure apparatus and method of manufacturing a device using the same
US4908656A (en) Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
US6115107A (en) Exposure apparatus
US5602400A (en) Surface position detecting method and apparatus including detection and correction of errors, such as surface position errors or tilt, in exposure regions
US5465152A (en) Method for coplanarity inspection of package or substrate warpage for ball grid arrays, column arrays, and similar structures
US5973773A (en) Lens distortion measurement using moire fringes
US6081614A (en) Surface position detecting method and scanning exposure method using the same
US6091486A (en) Blazed grating measurements of lithographic lens aberrations
US7126699B1 (en) Systems and methods for multi-dimensional metrology and/or inspection of a specimen
US5563684A (en) Adaptive wafer modulator for placing a selected pattern on a semiconductor wafer
US5786897A (en) Method and device for measuring pattern coordinates of a pattern formed on a pattern surface of a substrate
US4559603A (en) Apparatus for inspecting a circuit pattern drawn on a photomask used in manufacturing large scale integrated circuits
US5563703A (en) Lead coplanarity inspection apparatus and method thereof
US6323953B1 (en) Method and device for measuring structures on a transparent substrate
US20030095267A1 (en) Focus masking structures, focus patterns and measurements thereof
US4952970A (en) Autofocusing system for a projecting exposure apparatus
US5914774A (en) Projection exposure apparatus with function to measure imaging characteristics of projection optical system
US4759626A (en) Determination of best focus for step and repeat projection aligners
US4845558A (en) Method and apparatus for detecting defects in repeated microminiature patterns
US20060273242A1 (en) System and method for characterizing aerial image quality in a lithography system
US6057908A (en) Exposure condition measurement method
US4585342A (en) System for real-time monitoring the characteristics, variations and alignment errors of lithography structures
US4705940A (en) Focus detection in a projection optical system
US5798838A (en) Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same
US4704020A (en) Projection optical apparatus

Legal Events

Date Code Title Description
AS Assignment

Owner name: NIKON CORPORATION, 2-3, MARUNOUCHI 3-CHOME, CHIYOD

Free format text: CHANGE OF NAME;ASSIGNOR:NIPPON KOGAKU, K.K.;REEL/FRAME:004935/0584

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12