USD848384S1 - Transistor - Google Patents
Transistor Download PDFInfo
- Publication number
- USD848384S1 USD848384S1 US29/614,297 US201729614297F USD848384S US D848384 S1 USD848384 S1 US D848384S1 US 201729614297 F US201729614297 F US 201729614297F US D848384 S USD848384 S US D848384S
- Authority
- US
- United States
- Prior art keywords
- transistor
- view
- ornamental design
- design
- perspective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Description
The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.
Claims (1)
- The ornamental design for a transistor, as shown and described.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29/614,297 USD848384S1 (en) | 2017-08-17 | 2017-08-17 | Transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29/614,297 USD848384S1 (en) | 2017-08-17 | 2017-08-17 | Transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
USD848384S1 true USD848384S1 (en) | 2019-05-14 |
Family
ID=66391184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29/614,297 Active USD848384S1 (en) | 2017-08-17 | 2017-08-17 | Transistor |
Country Status (1)
Country | Link |
---|---|
US (1) | USD848384S1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD952181S1 (en) * | 2019-08-30 | 2022-05-17 | Kyocera Corporation | Analysis chip for biochemical testing machine |
Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2696575A (en) * | 1953-06-05 | 1954-12-07 | Motorola Inc | Transistor unit |
US2696574A (en) * | 1953-06-05 | 1954-12-07 | Motorola Inc | Transistor unit |
US2829257A (en) * | 1956-11-09 | 1958-04-01 | Dietz Co R E | Transistor oscillator circuit |
US2929753A (en) * | 1957-04-11 | 1960-03-22 | Beckman Instruments Inc | Transistor structure and method |
US2988652A (en) * | 1954-09-27 | 1961-06-13 | Ibm | Bistable transistor circuit using 6-terminal transistor which acts as two independent transistors |
US3002100A (en) * | 1954-09-27 | 1961-09-26 | Ibm | Transistor circuit element |
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
US4339765A (en) * | 1979-06-12 | 1982-07-13 | Tokyo Shibaura Denki Kabushiki Kaisha | Transistor device |
US4370670A (en) * | 1979-04-11 | 1983-01-25 | Fujitsu Limited | Transistor with plural parallel units |
US4408387A (en) * | 1981-09-28 | 1983-10-11 | Fujitsu Limited | Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask |
US4590666A (en) * | 1981-09-28 | 1986-05-27 | Fujitsu Limited | Method for producing a bipolar transistor having a reduced base region |
US4639757A (en) * | 1980-12-12 | 1987-01-27 | Hitachi, Ltd. | Power transistor structure having an emitter ballast resistance |
US4782378A (en) * | 1982-02-25 | 1988-11-01 | Fuji Electric Co., Ltd. | Transistor having integrated stabilizing resistor and method of making thereof |
US4827322A (en) * | 1982-12-06 | 1989-05-02 | Mitsubishi Benki Kabushiki Kaisha | Power transistor |
US4835588A (en) * | 1978-03-10 | 1989-05-30 | Fujitsu Limited | Transistor |
US4860082A (en) * | 1984-07-08 | 1989-08-22 | Nec Corporation | Bipolar transistor |
US6043507A (en) * | 1997-09-24 | 2000-03-28 | Micron Technology, Inc. | Thin film transistors and methods of making |
USD443253S1 (en) * | 1999-07-14 | 2001-06-05 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor substrate |
US20020189083A1 (en) * | 2000-04-12 | 2002-12-19 | Murata Manufacturing Co., Ltd. | Surface-mount type switching power-supply unit and mounting method for the same |
USD524763S1 (en) * | 2004-03-08 | 2006-07-11 | Mitsumi Electric Co., Ltd. | Transmitting/receiving unit |
US9601604B2 (en) * | 2012-09-25 | 2017-03-21 | Pst Sensors (Proprietary) Limited | Current switching transistor |
US9748379B2 (en) * | 2015-06-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double exponential mechanism controlled transistor |
-
2017
- 2017-08-17 US US29/614,297 patent/USD848384S1/en active Active
Patent Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2696574A (en) * | 1953-06-05 | 1954-12-07 | Motorola Inc | Transistor unit |
US2696575A (en) * | 1953-06-05 | 1954-12-07 | Motorola Inc | Transistor unit |
US2988652A (en) * | 1954-09-27 | 1961-06-13 | Ibm | Bistable transistor circuit using 6-terminal transistor which acts as two independent transistors |
US3002100A (en) * | 1954-09-27 | 1961-09-26 | Ibm | Transistor circuit element |
US2829257A (en) * | 1956-11-09 | 1958-04-01 | Dietz Co R E | Transistor oscillator circuit |
US2929753A (en) * | 1957-04-11 | 1960-03-22 | Beckman Instruments Inc | Transistor structure and method |
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
US4835588A (en) * | 1978-03-10 | 1989-05-30 | Fujitsu Limited | Transistor |
US4370670A (en) * | 1979-04-11 | 1983-01-25 | Fujitsu Limited | Transistor with plural parallel units |
US4339765A (en) * | 1979-06-12 | 1982-07-13 | Tokyo Shibaura Denki Kabushiki Kaisha | Transistor device |
US4639757A (en) * | 1980-12-12 | 1987-01-27 | Hitachi, Ltd. | Power transistor structure having an emitter ballast resistance |
US4590666A (en) * | 1981-09-28 | 1986-05-27 | Fujitsu Limited | Method for producing a bipolar transistor having a reduced base region |
US4408387A (en) * | 1981-09-28 | 1983-10-11 | Fujitsu Limited | Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask |
US4782378A (en) * | 1982-02-25 | 1988-11-01 | Fuji Electric Co., Ltd. | Transistor having integrated stabilizing resistor and method of making thereof |
US4827322A (en) * | 1982-12-06 | 1989-05-02 | Mitsubishi Benki Kabushiki Kaisha | Power transistor |
US4860082A (en) * | 1984-07-08 | 1989-08-22 | Nec Corporation | Bipolar transistor |
US6043507A (en) * | 1997-09-24 | 2000-03-28 | Micron Technology, Inc. | Thin film transistors and methods of making |
USD443253S1 (en) * | 1999-07-14 | 2001-06-05 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor substrate |
US20020189083A1 (en) * | 2000-04-12 | 2002-12-19 | Murata Manufacturing Co., Ltd. | Surface-mount type switching power-supply unit and mounting method for the same |
USD524763S1 (en) * | 2004-03-08 | 2006-07-11 | Mitsumi Electric Co., Ltd. | Transmitting/receiving unit |
US9601604B2 (en) * | 2012-09-25 | 2017-03-21 | Pst Sensors (Proprietary) Limited | Current switching transistor |
US9748379B2 (en) * | 2015-06-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double exponential mechanism controlled transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD952181S1 (en) * | 2019-08-30 | 2022-05-17 | Kyocera Corporation | Analysis chip for biochemical testing machine |
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