USD559802S1 - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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Publication number
USD559802S1
USD559802S1 US29/257,816 US25781606F USD559802S US D559802 S1 USD559802 S1 US D559802S1 US 25781606 F US25781606 F US 25781606F US D559802 S USD559802 S US D559802S
Authority
US
United States
Prior art keywords
light
emitting diode
elevation view
view
ornamental design
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US29/257,816
Inventor
Wen-Chieh Hsu
Liang-Jyi Yan
Jenn-Hwa Fu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tekcore Co Ltd
Original Assignee
Tekcore Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tekcore Co Ltd filed Critical Tekcore Co Ltd
Priority to US29/257,816 priority Critical patent/USD559802S1/en
Assigned to TEKCORE CO., LTD. reassignment TEKCORE CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FU, JENN-HAW, HSU, WEN-CHIEH, YAN, LIANG-JYI
Application granted granted Critical
Publication of USD559802S1 publication Critical patent/USD559802S1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

FIG. 1 is a front, left, top isometric view of the light emitting diode showing our new design;
FIG. 2 is a top plan view thereof;
FIG. 3 is a front elevation view thereof;
FIG. 4 is a right side elevation view thereof; and,
FIG. 5 is a right side elevation view thereof.
Where used in the drawings, the broken lines show the environmental structure only for the purpose of illustration, and form no parts of the claimed design.

Claims (1)

    CLAIM
  1. We claim the ornamental design for a light-emitting diode, as shown and described.
US29/257,816 2006-04-11 2006-04-11 Light-emitting diode Expired - Lifetime USD559802S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/257,816 USD559802S1 (en) 2006-04-11 2006-04-11 Light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29/257,816 USD559802S1 (en) 2006-04-11 2006-04-11 Light-emitting diode

Publications (1)

Publication Number Publication Date
USD559802S1 true USD559802S1 (en) 2008-01-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
US29/257,816 Expired - Lifetime USD559802S1 (en) 2006-04-11 2006-04-11 Light-emitting diode

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US (1) USD559802S1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060192223A1 (en) * 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device
USD619976S1 (en) * 2009-10-12 2010-07-20 Tekcore Co., Ltd. Light-emitting diode
USD638377S1 (en) * 2010-03-23 2011-05-24 Liang-Jyi Yan High-power light emitting diode chip
USD648287S1 (en) * 2011-03-30 2011-11-08 Epistar Corporation Light-emitting diode
USD688819S1 (en) * 2010-08-12 2013-08-27 Epistar Corporation Light emitting diode
USD689832S1 (en) * 2012-07-24 2013-09-17 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode
USD724552S1 (en) * 2013-08-06 2015-03-17 Formosa Epitaxy Incorporation Partial semiconductor light emitting component

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320739B1 (en) * 1998-04-18 2001-11-20 Tdk Corporation Electronic part and manufacturing method therefor
US6344665B1 (en) * 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
US6518598B1 (en) * 2001-12-21 2003-02-11 Epitech Corporation Ltd III-nitride LED having a spiral electrode
US6650018B1 (en) * 2002-05-24 2003-11-18 Axt, Inc. High power, high luminous flux light emitting diode and method of making same
US6835958B2 (en) * 2002-02-06 2004-12-28 Toyoda Gosei Co., Ltd. Light-emitting device
US6885034B1 (en) * 2003-05-09 2005-04-26 Winston Vaughan Schoenfeld Light emitting diode having multiple pits
US20050127485A1 (en) * 2003-12-11 2005-06-16 Shih-Chang Shei Light-emitting diode package structure
USD514073S1 (en) * 2003-07-09 2006-01-31 Nichai Corporation Light emitting diode
USD532757S1 (en) * 2005-11-02 2006-11-28 Supernova Optoelectronics Corp. Electrode layer
USD532756S1 (en) * 2005-11-02 2006-11-28 Supernova Optoelectronics Corp. Electrode layer

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320739B1 (en) * 1998-04-18 2001-11-20 Tdk Corporation Electronic part and manufacturing method therefor
US6344665B1 (en) * 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
US6518598B1 (en) * 2001-12-21 2003-02-11 Epitech Corporation Ltd III-nitride LED having a spiral electrode
US6835958B2 (en) * 2002-02-06 2004-12-28 Toyoda Gosei Co., Ltd. Light-emitting device
US6650018B1 (en) * 2002-05-24 2003-11-18 Axt, Inc. High power, high luminous flux light emitting diode and method of making same
US6885034B1 (en) * 2003-05-09 2005-04-26 Winston Vaughan Schoenfeld Light emitting diode having multiple pits
USD514073S1 (en) * 2003-07-09 2006-01-31 Nichai Corporation Light emitting diode
USD517026S1 (en) * 2003-07-09 2006-03-14 Nichia Corporation Light emitting diode
US20050127485A1 (en) * 2003-12-11 2005-06-16 Shih-Chang Shei Light-emitting diode package structure
USD532757S1 (en) * 2005-11-02 2006-11-28 Supernova Optoelectronics Corp. Electrode layer
USD532756S1 (en) * 2005-11-02 2006-11-28 Supernova Optoelectronics Corp. Electrode layer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060192223A1 (en) * 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device
USD619976S1 (en) * 2009-10-12 2010-07-20 Tekcore Co., Ltd. Light-emitting diode
USD638377S1 (en) * 2010-03-23 2011-05-24 Liang-Jyi Yan High-power light emitting diode chip
USD688819S1 (en) * 2010-08-12 2013-08-27 Epistar Corporation Light emitting diode
USD715970S1 (en) * 2010-08-12 2014-10-21 Epistar Corporation Light emitting diode
USD752249S1 (en) * 2010-08-12 2016-03-22 Epistar Corporation Light emitting diode
USD648287S1 (en) * 2011-03-30 2011-11-08 Epistar Corporation Light-emitting diode
USD689832S1 (en) * 2012-07-24 2013-09-17 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode
USD724552S1 (en) * 2013-08-06 2015-03-17 Formosa Epitaxy Incorporation Partial semiconductor light emitting component

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