US9881828B2 - Wafer processing method - Google Patents

Wafer processing method Download PDF

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US9881828B2
US9881828B2 US15/410,886 US201715410886A US9881828B2 US 9881828 B2 US9881828 B2 US 9881828B2 US 201715410886 A US201715410886 A US 201715410886A US 9881828 B2 US9881828 B2 US 9881828B2
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wafer
tape
daf
chips
dividing
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US20170213756A1 (en
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Shinji Yoshida
Yusaku Ito
Hirohide Yano
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
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    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Definitions

  • the present invention relates to a wafer processing method for dividing a wafer into individual chips and attaching a die attach film (DAF) to the back side of each chip to form the chip with the DAF attached thereto.
  • DAF die attach film
  • a wafer processing method for processing a wafer having a plurality of devices, the front side of the wafer being partitioned by a plurality of crossing division lines to thereby define a plurality of separate regions where the devices are formed, the wafer processing method including a tape attaching step of attaching a dicing tape to the back side of the wafer, the dicing tape having a DAF and an adhesive layer curable by the application of ultraviolet light; a storing step of imaging the wafer through the dicing tape to obtain an image of the wafer after performing the tape attaching step, detecting the positions of poor adhesion where the DAF does not adhere to the wafer, from the image, and storing the positions of poor adhesion detected above; a dividing step of dividing the wafer into individual chips along the division lines and also dividing the DAF into pieces attached to the respective chips after performing the storing step; an ultraviolet light applying step of applying ultraviolet light to the dicing tape after performing the dividing step,
  • the expansion tape having the DAF and the adhesive layer is attached to the back side of the wafer after dividing the wafer, and the back side of the wafer is imaged through the expansion tape to remove each breaking line formed between any adjacent ones of the chips and also to detect the positions of poor adhesion where the DAF does not adhere to the wafer.
  • the positions of poor adhesion detected above are stored. Accordingly, there is no possibility that each breaking line may be erroneously recognized as poor adhesion, so that only the positions of poor adhesion can be stored.
  • After dividing the DAF only the chips with the DAF well adhered are separated at the boundary between the DAF and the adhesive layer and then picked up. Accordingly, there is no possibility that the chips having the poor adhesion of the DAF may be mounted to a substrate or the like, so that a chip mounting operation and the chips mounted are not wasted, but the working efficiency can be improved.
  • the chips with the DAF well adhered can be selectively picked up according to the positions of poor adhesion of the DAF previously stored, so that mounting of the chips having the poor adhesion of the DAF can be eliminated to thereby improve the working efficiency.
  • FIG. 1B is a sectional view of the wafer with the dicing tape shown in FIG. 1A ;
  • FIG. 4 is a sectional view showing a storing step in the first preferred embodiment
  • FIGS. 5A to 5C are schematic plan views showing a method of detecting the positions of poor adhesion of a DAF to the wafer in the first preferred embodiment
  • FIG. 6 is a sectional view showing a protective tape peeling step in the first preferred embodiment
  • FIG. 8 is a sectional view showing an ultraviolet light applying step in the first preferred embodiment
  • FIG. 9 is a sectional view showing a pickup step in the first preferred embodiment
  • FIG. 11 is a sectional view, partly in side elevation, showing a wafer dividing step in the second preferred embodiment
  • FIG. 14 is a sectional view showing a protective tape peeling step in the second preferred embodiment
  • FIG. 15 is a sectional view showing a DAF dividing step in the second preferred embodiment
  • FIG. 16 is a sectional view showing an ultraviolet light applying step in the second preferred embodiment.
  • FIG. 1A is a perspective view of a wafer W to which a dicing tape 10 is attached
  • FIG. 1B is a schematic sectional view of the wafer W with the dicing tape 10 attached thereto.
  • the wafer W is a substantially disk-shaped member, and it is supported through the dicing tape 10 to a ring frame 14 in transferring the wafer W.
  • a plurality of crossing division lines are formed on the front side of the wafer W to thereby define a plurality of separate regions where a plurality of devices 15 are formed.
  • a notch 16 indicating a crystal orientation is formed on the outer circumference of the wafer W.
  • the wafer W may be a semiconductor wafer composed of a semiconductor substrate and semiconductor devices formed on the semiconductor substrate or may be an optical device wafer composed of an inorganic material substrate and optical devices formed on the inorganic material substrate.
  • the dicing tape 10 has a function as a tape for dicing and a function as an adhesive for die bonding.
  • the dicing tape 10 is composed of a base tape 11 , an adhesive layer 12 formed on the base tape 11 , and a DAF 13 formed on the adhesive layer 12 . That is, the DAF 13 is stacked through the adhesive layer 12 on the base tape 11 .
  • the adhesive layer 12 is formed of ultraviolet curing resin curable by the application of ultraviolet light. Accordingly, by curing this resin, the DAF 13 can be easily separated from the base tape 11 .
  • the DAF 13 is separated from the adhesive layer 12 after dividing the wafer W into chips C (see FIG. 8 ) with the DAF 13 attached.
  • the DAF 13 attached to each chip C functions as an adhesive in die bonding (mounting) of each chip C.
  • the base tape 11 (dicing tape) and the DAF 13 are united together to form the dicing tape 10 , so that an operation for attaching a DAF to the wafer W can be eliminated.
  • FIG. 2 is a sectional view showing a grinding step
  • FIG. 3 is a sectional view showing a tape attaching step
  • FIG. 4 is a sectional view showing a storing step
  • FIGS. 5A to 5C are schematic plan views showing a method of detecting the positions of poor adhesion
  • FIG. 6 is a sectional view showing a protective tape peeling step
  • FIG. 7 is a sectional view showing a dividing step
  • FIG. 8 is a sectional view showing an ultraviolet light applying step
  • FIG. 9 is a sectional view showing a pickup step.
  • the grinding step is first performed by using a grinding apparatus including a chuck table 21 and a grinding unit 22 .
  • a protective tape 17 for protecting the devices is attached to the front side of the wafer W, and the protective tape 17 attached to the front side of the wafer W is held on the chuck table 21 .
  • the grinding unit 22 is rotated and lowered toward the chuck table 21 until a grinding wheel 23 included in the grinding unit 22 comes into contact with the back side of the wafer W. Accordingly, the back side of the wafer W is ground by the grinding wheel 23 being rotated.
  • the thickness of the wafer W is measured by a height gauge (not shown) in real time, and the grinding amount is adjusted so that the result of measurement by the height gauge approaches a target finished thickness.
  • the protective tape 17 has an adhesive layer formed of ultraviolet curing resin, through which the protective tape 17 is attached to the front side of the wafer W. After grinding the wafer W to reduce the thickness of the wafer W to the finished thickness, ultraviolet light is applied to the protective tape 17 to thereby cure the adhesive layer of the protective tape 17 . In this manner, before attaching the dicing tape 10 to the wafer W, the adhesive layer of the protective tape 17 is cured to thereby facilitate the separation of the protective tape 17 from the wafer W. While the grinding step has been described above, a polishing step may be performed after performing the grinding step. Further, the grinding step may be composed of rough grinding and finish grinding for the wafer W.
  • the tape attaching step is performed after performing the grinding step, by using a tape attaching apparatus including a central table 31 , a peripheral table 32 surrounding the central table 31 , and a tape roller 33 .
  • the protective tape 17 attached to the front side of the wafer W is placed on the central table 31
  • the ring frame 14 is placed on the peripheral table 32 .
  • the dicing tape 10 is attached to the back side of the wafer W and the back side of the ring frame 14 by using the tape roller 33 .
  • the tape attaching step is not limited to the method shown in FIG. 3 , provided that the dicing tape 10 can be attached to the wafer W.
  • the tape attaching step may be manually performed by an operator.
  • the storing step is performed after performing the tape attaching step, by using an image sensor 36 , a detecting unit 37 connected to the image sensor 36 , and a storing unit 38 connected to the detecting unit 37 .
  • the image sensor 36 is positioned above and near the wafer W held on the central table 31 of the tape attaching apparatus, thereby imaging the wafer W through the dicing tape 10 .
  • An image obtained by the image sensor 36 is output to the detecting unit 37 .
  • the detecting unit 37 detects the positions of poor adhesion (bubbles B) where the DAF 13 does not adhere to the wafer W.
  • the positions of poor adhesion thus detected by the detecting unit 37 are output to the storing unit 38 and then stored by the storing unit 38 . Accordingly, it is determined whether or not each chip C (see FIG. 8 ) obtained by dividing the wafer W has the poor adhesion.
  • the poor adhesion of the DAF 13 is caused by the intrusion of the bubbles B between the DAF 13 and the wafer W and appears as a white area on the image of the wafer W.
  • any pixel having a luminance greater than or equal to a predetermined luminance is searched to detect the coordinate position of the pixel in the white area.
  • the storing unit 38 preliminarily stores the correspondence between each pixel in the coordinate system and each chip C (see FIG. 8 ) obtained by dividing the wafer W. Accordingly, each pixel indicating the poor adhesion of the DAF 13 is stored into the storing unit 38 so as to be related to the corresponding chip C.
  • the poor adhesion is determined, whereas when the pixels in a peripheral area A 2 in one chip are white, it is determined that the bubble B in the peripheral area A 2 may be expelled in bonding the chip C and that such a white area is negligible as having no effect on adhesion.
  • an area sensor having a plurality of imaging devices arranged in rows and columns may be used to image the whole surface of the wafer W from the upper side thereof.
  • a line sensor having a plurality of imaging devices arranged in a line may be used as the image sensor 36 .
  • the line sensor has a length not less than the diameter of the wafer W. In this case, the line sensor and the wafer W are relatively scanned to image the whole surface of the wafer W.
  • the wafer W may be imaged by any imaging apparatus capable of imaging the whole surface of the wafer W, rather than by the use of the image sensor 36 .
  • a photosensor having a light applying portion and a light receiving portion may be used to image the wafer W in place of the image sensor 36 .
  • measuring light is applied from the light applying portion to the front side of the wafer W, and reflected light obtained by the reflection of the measuring light from the front side of the wafer W is received by the light receiving portion.
  • the quantity of the reflected light from the wafer W is different from the quantity of the reflected light from the bubbles B.
  • the quantity of the reflected light from the bubbles B is larger than that from the wafer W, so that the photosensor is scanned relative to the wafer W and the position where the quantity of the reflected light has changed is then stored into the storing unit 38 .
  • any scanning means is required.
  • the light quantity detected by the light receiving portion of the photosensor can be converted into data as voltage values, and processing can be performed faster than that in the case of using the image of the wafer W.
  • the protective tape peeling step is performed after performing the storing step, by using a tape peeling apparatus including a chuck table 41 and a peeling tape 42 .
  • the tape peeling step the dicing tape 10 attached to the back side of the wafer W is held on the chuck table 41 , so that the protective tape 17 is oriented upward.
  • the peeling tape 42 is attached to a part of the peripheral portion of the protective tape 17 , and the protective tape 17 is peeled from the wafer W by pulling up the peeling tape 42 .
  • the adhesive layer (not shown) of the protective tape 17 is previously cured by the application of ultraviolet light to thereby reduce the adhesive force of the protective tape 17 . Accordingly, the protective tape 17 can be easily peeled from the wafer W without separation of the wafer W from the dicing tape 10 .
  • the dividing step is performed after performing the tape peeling step, by using a cutting apparatus including a chuck table 46 and a cutting blade 47 .
  • the wafer W is held through the dicing tape 10 on the chuck table 46 .
  • the cutting blade 47 is positioned directly above the extension of a predetermined one of the division lines formed on the front side of the wafer W.
  • the cutting blade 47 is rotated at a high speed and lowered to a height where the DAF 13 of the dicing tape 10 can also be cut.
  • the chuck table 46 is moved relatively to the cutting blade 47 being rotated, thereby dividing the wafer W and the DAF 13 along the predetermined division line.
  • This cutting operation is similarly performed along all of the other division lines to thereby divide the wafer W into individual chips C along all of the other division lines and also divide the DAF 13 along all of the other division lines.
  • the modified layer is a region where the density, refractive index, mechanical strength, and any other physical properties of the wafer W have been made different from those in its ambient region by the application of a laser beam, so that the strength of the modified layer is lower than that of its ambient region.
  • Examples of the modified layer include a melted region, cracked region, dielectric breakdown region, and refractive index changed region. These regions may be mixed.
  • the ultraviolet light applying step is performed after performing the dividing step, by using a support table 51 and an ultraviolet lamp 52 provided below the support table 51 .
  • the support table 51 is formed of a material such as glass capable of transmitting ultraviolet light.
  • the wafer W is supported through the dicing tape 10 on the support table 51 .
  • ultraviolet light is applied from the ultraviolet lamp 52 to the dicing tape 10 .
  • the adhesive layer 12 between the base tape 11 and the DAF 13 of the dicing tape 10 is cured to reduce its adhesive force. Accordingly, the adhesive force of the DAF 13 to each chip C becomes greater than the adhesive force of the DAF 13 to the base tape 11 , so that each chip C with the DAF 13 can be easily separated from the dicing tape 10 .
  • the pickup step is performed after performing the ultraviolet light applying step, by using a pickup apparatus having a suction nozzle 56 .
  • the suction nozzle 56 is positioned above the individual chips C on the dicing tape 10 .
  • the chips C having the poor adhesion (bubbles B) of the DAF 13 are excluded and the other chips C with the DAF 13 well adhered are detected.
  • the suction nozzle 56 is positioned directly above one of the chips C with the DAF 13 well adhered.
  • the suction nozzle 56 is operated to hold this chip C with the DAF 13 well adhered under suction and separate it at the boundary between the adhesive layer 12 and the DAF 13 .
  • the chip C with the DAF 13 well adhered is picked up by the suction nozzle 56 .
  • the other chips C with the DAF 13 well adhered are also similarly picked up by the suction nozzle 56 .
  • the present invention is not limited to this configuration.
  • the poor adhesion of the DAF 13 is detected after dividing the wafer W.
  • an expansion tape 70 with a DAF 73 is attached to the chips C obtained by dividing the wafer W, and the positions of poor adhesion between the DAF 73 and the chips C are detected (see FIG. 13 ).
  • a breaking line 75 indicative of the spacing between any adjacent ones of the chips C appears as a white area on the image of the wafer W.
  • the pixels indicating the breaking lines 75 are removed from the image and only the bubbles B indicating the poor adhesion are detected.
  • FIG. 10 is a sectional view showing a division start point forming step
  • FIG. 11 is a sectional view showing a wafer dividing step
  • FIG. 12 is a sectional view showing a tape attaching step
  • FIG. 13 is a sectional view showing a storing step
  • FIG. 14 is a sectional view showing a protective tape peeling step
  • FIG. 15 is a sectional view showing a DAF dividing step
  • FIG. 16 is a sectional view showing an ultraviolet light applying step
  • FIG. 17 is a sectional view showing a pickup step.
  • the division start point forming step is first performed by using a laser processing apparatus including a chuck table 61 and a laser head 62 .
  • the wafer W is held through a protective tape 17 on the chuck table 61 .
  • the beam outlet of the laser head 62 is positioned directly above a predetermined one of the division lines of the wafer W, and a laser beam is applied from the laser head 62 to the back side of the wafer W in the condition where the focal point of the laser beam is set inside the wafer W.
  • the laser beam has a transmission wavelength to the wafer W.
  • the wafer dividing step is performed after performing the division start point forming step, by using a grinding apparatus including a chuck table 21 and a grinding unit 22 .
  • the wafer W is held through the protective tape 17 on the chuck table 21 .
  • the grinding unit 22 is rotated and lowered toward the chuck table 21 until a grinding wheel 23 included in the grinding unit 22 comes into contact with the back side of the wafer W. Accordingly, the back side of the wafer W is ground by the grinding wheel 23 being rotated.
  • the protective tape 17 is attached through an adhesive layer of ultraviolet curing resin to the front side of the wafer W. After grinding the wafer W, ultraviolet light is applied to the protective tape 17 to thereby cure the adhesive layer of the protective tape 17 . In this manner, before attaching an expansion tape 70 (see FIG. 12 ) to the wafer W, the adhesive layer of the protective tape 17 is cured to thereby facilitate the separation of the protective tape 17 from the wafer W.
  • the tape attaching step is performed after performing the wafer dividing step, by using a tape attaching apparatus including a central table 31 , a peripheral table 32 surrounding the central table 31 , and a tape roller 33 .
  • the protective tape 17 attached to the front side of the wafer W is placed on the central table 31
  • the ring frame 14 is placed on the peripheral table 32 .
  • the expansion tape 70 is attached to the back side of the wafer W and the back side of the ring frame 14 by using the tape roller 33 .
  • the tape attaching step is not limited to the method shown in FIG. 12 , provided that the expansion tape 70 can be attached to the wafer W.
  • the tape attaching step may be manually performed by an operator.
  • the wafer processing method of the second preferred embodiment employs the expansion tape 70 in place of the dicing tape 10 (see FIG. 1B ) used in the first preferred embodiment.
  • the expansion tape 70 has a function as a tape for expansion and a function as an adhesive for die bonding.
  • the expansion tape 70 is composed of an expandable base tape 71 , an adhesive layer 72 formed on the base tape 71 , and a DAF 73 formed on the adhesive layer 72 . That is, the DAF 73 is stacked through the adhesive layer 72 on the base tape 71 .
  • the adhesive layer 72 is formed of ultraviolet curing resin curable by the application of ultraviolet light. Accordingly, by curing this resin, the DAF 73 can be easily separated from the base tape 71 . Since the base tape 71 (expansion tape) and the DAF 73 are united together to form the expansion tape 70 , an operation for attaching a DAF to the wafer W can be eliminated.
  • the storing step is performed after performing the tape attaching step, by using an image sensor 36 , a detecting unit 37 connected to the image sensor 36 , and a storing unit 38 connected to the detecting unit 37 .
  • the image sensor 36 is positioned above and near the wafer W held on the central table 31 of the tape attaching apparatus, thereby imaging the wafer W through the expansion tape 70 .
  • An image obtained by the image sensor 36 is output to the detecting unit 37 .
  • the detecting unit 37 detects the positions of poor adhesion (bubbles B) where the DAF 73 does not adhere to the wafer W. At this time, the poor adhesion of the DAF 73 appears as a white area on the image of the wafer W.
  • each breaking line 75 indicating the spacing between any adjacent ones of the chips C obtained by the wafer dividing step shown in FIG. 11 also appears as a white area on the image of the wafer W.
  • the detecting unit 37 removes the breaking lines 75 from the image and then detects the poor adhesion of the DAF 13 from only the bubbles B appearing as white pixels on the image.
  • the positions of poor adhesion detected by the detecting unit 37 are output to the storing unit 38 and then stored by the storing unit 38 . Accordingly, it is determined whether or not each chip C obtained by dividing the wafer W has the poor adhesion. Further, as in the first preferred embodiment, the poor adhesion may be determined according to the size of each bubble B (see FIG. 5B ) or according to the position of each bubble B (see FIG. 5C ).
  • the positions of the breaking lines 75 may be calculated from the wafer size and the index amount previously set in the laser processing apparatus, and the breaking lines 75 may be removed from the image according to the result of this calculation. This method can be easily performed because the breaking lines 75 are removed by calculation. Further, an orientation flat or notch indicating the crystal orientation of the wafer is used to specify an X direction and a Y direction.
  • the image may be subjected to filter processing, thereby extracting the breaking lines 75 to remove them from the image.
  • filter processing thereby extracting the breaking lines 75 to remove them from the image.
  • a differential filter or a Laplacian filter may be used to emphasize the outlines (edges) of the breaking lines 75 and the bubbles B, and the linear outlines may be removed as the breaking lines 75 from the image. Accordingly, not only when the shape of each chip C is rectangular, but also when the shape of each chip C is polygonal such as triangular, pentagonal, and hexagonal, the breaking lines 75 can be removed properly.
  • the breaking lines 75 may be extracted according to luminance to thereby remove the breaking lines 75 from the image.
  • a change in luminance in the X and Y directions in the image is graphed and the areas where the luminance is greater than or equal to a preset threshold are determined as the breaking lines 75 and the bubbles B.
  • the areas having the luminance greater than or equal to the preset threshold are arranged periodically (at substantially equal intervals)
  • the areas are determined as the breaking lines 75
  • these areas are arranged at random positions, the areas are determined as the bubbles B.
  • an area sensor having a plurality of imaging devices arranged in rows and columns may be used to image the whole surface of the wafer W from the upper side thereof.
  • a line sensor having a plurality of imaging devices arranged in a line may be used as the image sensor 36 .
  • the line sensor has a length not less than the diameter of the wafer W. In this case, the line sensor and the wafer W are relatively scanned to image the whole surface of the wafer W.
  • the wafer W may be imaged by any imaging apparatus capable of imaging the whole surface of the wafer W, rather than by the use of the image sensor 36 .
  • a photosensor having a light applying portion and a light receiving portion may be used to image the wafer W in place of the image sensor 36 .
  • measuring light is applied from the light applying portion to the front side of the wafer W, and reflected light obtained by the reflection of the measuring light from the front side of the wafer W is received by the light receiving portion.
  • the quantity of the reflected light from the wafer W is different from the quantity of the reflected light from the bubbles B.
  • the quantity of the reflected light from the bubbles B is larger than that from the wafer W, so that the photosensor is scanned relative to the wafer W and the position where the quantity of the reflected light has changed is then stored into the storing unit 38 .
  • any scanning means is required.
  • the light quantity detected by the light receiving portion of the photosensor can be converted into data as voltage values, processing can be performed faster than that in the case of using the image of the wafer W.
  • the protective tape peeling step is performed after performing the storing step, by using a tape peeling apparatus including a chuck table 41 and a peeling tape 42 .
  • the tape peeling step the expansion tape 70 attached to the back side of the wafer W is held on the chuck table 41 , so that the protective tape 17 is oriented upward.
  • the peeling tape 42 is attached to a part of the peripheral portion of the protective tape 17 , and the protective tape 17 is peeled from the wafer W by pulling up the peeling tape 42 .
  • the adhesive layer (not shown) of the protective tape 17 is previously cured by the application of ultraviolet light to thereby reduce the adhesive force of the protective tape 17 . Accordingly, the protective tape 17 can be easily peeled from the wafer W without separation of the wafer W from the expansion tape 70 .
  • the DAF dividing step is performed after performing the protective tape peeling step, by using an expanding apparatus including an annular table 81 and an expanding drum 82 provided inside the annular table 81 .
  • the annular table 81 is vertically movable.
  • the ring frame 14 is held on the annular table 81 , and the upper end of the expanding drum 82 is positioned directly below the annular area of the expansion tape 70 between the wafer W and the ring frame 14 .
  • the annular table 81 is lowered to thereby lower the ring frame 14 .
  • the expanding drum 82 is raised relative to the annular table 81 , thereby pushing up the expansion tape 70 and radially expanding the expansion tape 70 .
  • the expansion of an attached portion of the DAF 73 to the chips C is suppressed and the expansion of the other portion where the DAF 73 is not attached to the chips C is only allowed to be expanded and divided. That is, the DAF 73 is divided along each spacing between any adjacent ones of the chips C.
  • the ultraviolet light applying step is performed after performing the DAF dividing step, by using a support table 51 and an ultraviolet lamp 52 provided below the support table 51 .
  • the support table 51 is formed of a material such as glass capable of transmitting ultraviolet light.
  • the wafer W is supported through the expansion tape 70 on the support table 51 .
  • ultraviolet light is applied from the ultraviolet lamp 52 to the expansion tape 70 .
  • the adhesive layer 72 between the base tape 71 and the DAF 73 of the expansion tape 70 is cured to reduce its adhesive force. Accordingly, the adhesive force of the DAF 73 to each chip C becomes greater than the adhesive force of the DAF 73 to the base tape 71 , so that each chip C with the DAF 73 can be easily separated from the expansion tape 70 .
  • the pickup step is performed after performing the ultraviolet light applying step, by using a pickup apparatus having a suction nozzle 56 .
  • the suction nozzle 56 is positioned above the individual chips C on the expansion tape 70 .
  • the chips C having the poor adhesion (bubbles B) of the DAF 73 are excluded and the other chips C with the DAF 73 well adhered are detected.
  • the suction nozzle 56 is positioned directly above one of the chips C with the DAF 73 well adhered.
  • the suction nozzle 56 is operated to hold the chip C with the DAF 73 well adhered under suction and separate it at the boundary between the adhesive layer 72 and the DAF 73 .
  • the chip C with the DAF 73 well adhered is picked up by the suction nozzle 56 .
  • the other chips C with the DAF 73 well adhered are also similarly picked up by the suction nozzle 56 .
  • the expansion tape 70 having the DAF 73 and the adhesive layer 72 is attached to the back side of the wafer W after dividing the wafer W, and the back side of the wafer W is imaged through the expansion tape 70 to remove each breaking line 75 formed between any adjacent ones of the chips C and also to detect the positions of poor adhesion where the DAF 73 does not adhere to the wafer W.
  • the positions of poor adhesion detected above are stored into the storing unit 38 . Accordingly, there is no possibility that each breaking line 75 may be erroneously recognized as poor adhesion, so that only the positions of poor adhesion (bubbles B) can be stored.
  • each step may be performed by separate apparatuses or by the same apparatus.
  • the order of the steps may be suitably changed, provided that only the chips with the DAF well adhered can be picked up in the pickup step.
  • the present invention has the effect that mounting of the chips having the poor adhesion of the DAF can be eliminated to thereby improve the working efficiency.
  • the present invention is useful as a wafer processing method for dividing a wafer by blade dicing, SDBG, DBG, etc.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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JP7343293B2 (ja) * 2019-04-18 2023-09-12 株式会社ディスコ 分割加工装置
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JP7286464B2 (ja) * 2019-08-02 2023-06-05 株式会社ディスコ レーザー加工装置
CN112201600B (zh) * 2020-10-14 2024-03-08 北京中科镭特电子有限公司 一种晶圆劈裂扩片装置及晶圆裂片扩片方法
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US20170213756A1 (en) 2017-07-27
TWI708300B (zh) 2020-10-21
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JP2017130598A (ja) 2017-07-27

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