US8791536B2 - Stacked sensor packaging structure and method - Google Patents

Stacked sensor packaging structure and method Download PDF

Info

Publication number
US8791536B2
US8791536B2 US13/352,844 US201213352844A US8791536B2 US 8791536 B2 US8791536 B2 US 8791536B2 US 201213352844 A US201213352844 A US 201213352844A US 8791536 B2 US8791536 B2 US 8791536B2
Authority
US
United States
Prior art keywords
image sensor
digital signal
signal processor
chip package
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US13/352,844
Other versions
US20120273908A1 (en
Inventor
Larry Kinsman
Yu Te Hsieh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Aptina Imaging Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aptina Imaging Corp filed Critical Aptina Imaging Corp
Priority to US13/352,844 priority Critical patent/US8791536B2/en
Assigned to APTINA IMAGING CORPORATION reassignment APTINA IMAGING CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KINSMAN, LARRY, HSIEH, YU TE
Publication of US20120273908A1 publication Critical patent/US20120273908A1/en
Application granted granted Critical
Publication of US8791536B2 publication Critical patent/US8791536B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469Assemblies, i.e. hybrid integration
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04073Bonding areas specifically adapted for connectors of different types
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05541Structure
    • H01L2224/05548Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • H01L2924/10158Shape being other than a cuboid at the passive surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16151Cap comprising an aperture, e.g. for pressure control, encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Definitions

  • the present invention relates to a chip package for an image sensor and a manufacturing method thereof.
  • an image sensor is a device that changes light indicating an image of an object into an electric signal for each pixel.
  • An image sensor is used for small electronic products capable of photographing still images and motion pictures, for example, digital cameras, mobile phones, PDAs (personal digital assistants), rear view monitoring cameras included in bumpers, and interphones.
  • the image sensor includes a charge coupled device (CCD) and/or a complementary MOSFET oxidized semiconductor (CMOS).
  • CMOS complementary MOSFET oxidized semiconductor
  • the image sensor is a type of semiconductor chip.
  • a semiconductor chip is packaged for protection from external shocks, the environment and the exchange of electric signals with the outside.
  • An image sensor chip is connected to a digital signal processor (DSP) to process an electric signal output from the image sensor chip and to a memory to store image information.
  • DSP digital signal processor
  • the image sensor chip is electrically interconnected to a flexible printed circuit board (FPCB) and a hard printed circuit board (HPCB) to exchange electric signals with an electronic device outside a camera module.
  • FPCB flexible printed circuit board
  • HPCB hard printed circuit board
  • FIGS. 1 and 2 are sectional views showing conventional chip packages for an image sensor.
  • an image sensor chip 1 is wire-bonded to the upper surface of an HPCB 6 via a metal wire 3 .
  • a DSP 7 is electrically connected to the HPCB 6 by being flipchip bonded to the lower surface of the HPCB 6 .
  • An infrared (IR) cut filter 9 is arranged above an image sensor 2 .
  • the image sensor chip 1 is arranged at the lowermost position of a housing 4 .
  • a peripheral part of the upper surface of the image sensor chip 1 is electrically connected to the FPCB 8 via flip chip bonding 1 a .
  • the DSP 7 is located at a portion of the FPCB 8 positioned outside the housing 4 .
  • chip packages for an image sensor are known, there exists a continuous need to reduce the size of those chip packages in the interest of minimizing the electronic products in which those chip packages are housed.
  • FIG. 1 is a cross-sectional view of a conventional chip package for an image sensor.
  • FIG. 2 is a cross-sectional view of another conventional chip package for an image sensor.
  • FIGS. 3A and 3B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to exemplary embodiments of the invention.
  • FIG. 4 is a schematic diagram depicting the process of assembling the stacked chip package of FIG. 3B .
  • FIG. 5 depicts a cross-sectional schematic view of a stacked chip package for an image sensor (see step 5 ) according to another exemplary embodiment of the invention, and a schematic diagram depicting the process of assembling the stacked chip package.
  • FIGS. 6A and 6B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to yet other exemplary embodiments of the invention.
  • FIGS. 7A and 7B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to still other exemplary embodiments of the invention.
  • FIG. 8 depicts a cross-sectional schematic view of a stacked chip package for an image sensor according to another exemplary embodiment of the invention.
  • FIGS. 3A and 3B depict cross-sectional views of two different variations of a stacked chip package 10 and 10 ′, respectively, in which a DSP is embedded in a cavity formed on a lower surface of an image sensor, according to exemplary embodiments of the invention.
  • the primary advantages of the stacked chip package arrangements shown in FIGS. 3A and 3B are the decreased length of the signal transfer route between the DSP and the image sensor and the reduction in overall size as compared with conventional chip packages for an image sensor.
  • the stacked chip packages 10 and 10 ′ each generally comprises a lens 12 (or cover glass), a image sensor 14 mounted to the lens 12 by a resin 13 , a DSP 16 that is embedded within a recess 18 that is defined on the bottom side of the image sensor 14 , an underfill 19 coated on the bottom-side surfaces of the DSP 16 and the image sensor 14 , and an interposer/substrate 20 applied to the underfill 19 .
  • a slight gap exists between the walls of the DSP 16 and the walls of the recess 18 of the image sensor 14 .
  • the gap is useful for thermally isolating the DSP 16 from the image sensor 14 .
  • the lower surfaces of the DSP 16 and the image sensor 14 are substantially coplanar (i.e., reside on the same plane).
  • the image sensor 14 includes a plurality of vias 22 (two shown) that are defined through its thickness each of which create an electronic interconnection between a respective aluminum pad 24 that is positioned on the top side of the image sensor 14 and a respective bump 26 (or bump 26 ′ in FIG. 3B ) on the bottom side of the image sensor 14 .
  • the aluminum pads (not explicitly shown) of the DSP 16 are positioned face down toward the interposer 20 .
  • the bumps 28 and 28 ′ of FIGS. 3A and 3B respectively, that are positioned on the aluminum pads of the DSP 16 are positioned in contact with conductive regions on the top side of the interposer 20 .
  • the underfill 19 fills in the gap between the sensor 14 and the interposer 20 as well as the gap between the DSP 16 and the interposer 20 .
  • a series of solder bumps 29 that are positioned on the bottom surface of the interposer 20 are electrically connected with the conductive regions on the top surface of the interposer 20 .
  • the solder bumps 29 are provided for connecting to a substrate, circuit board, or other device of an electronic component.
  • the package 10 in FIG. 3A includes solder bumps 26 and 28 to accomplish electrical interconnection
  • the package 10 ′ in FIG. 3B includes gold stud bumps 26 ′ and 28 ′ to accomplish electrical interconnection.
  • Bonding between the image sensor 14 , the DSP 16 and the interposer 20 may be accomplished by a eutectic bonding process, a metal melting process, an atomic diffusion process, a heating process, an ultrasonic heating process and/or a thermosonic heating process, for example.
  • the image sensor 14 captures an image through the lens 12 and converts the image to an analog signal.
  • the analog signal is transmitted to the DSP 16 via the bumps 26 , the interposer 20 , and the bumps 28 .
  • the DSP 16 processes and digitizes the analog signal, and transmits the digitized signal via the bumps 28 to the interposer 20 , and, via the bumps 29 of the interposer 20 , to a circuit an electronic device (not shown) that is connected to the bumps 29 .
  • FIG. 4 is a schematic diagram depicting an exemplary process of assembling the stacked chip package 10 ′ of FIG. 3B .
  • the process generally includes ten steps, which are labeled 1 through 10 . The steps are not necessarily limited to the particular sequence that is described below, and may vary from that shown and described.
  • the DSP 16 is provided.
  • gold stud bumps 28 ′ are added to the bottom side (i.e., the functional side pad) of the DSP 16 .
  • a subassembly 30 is provided.
  • the subassembly 30 includes the image sensor 14 , the lens or cover glass 12 and other components that are mounted together.
  • the recess 18 is formed on the bottom side surface of the sensor 14 .
  • the recess 18 may be formed by an etching process or other chemical or physical method.
  • gold stud bumps 26 ′ are added to the bottom side of the image sensor 14 , thereby forming subassembly 32 .
  • the interposer 20 is provided.
  • an underfill layer is applied to the top surface of the interposer 20 .
  • the DSP 16 is bonded to the underfill 19 by a thermosonic bonding horn 33 to form subassembly 34 .
  • subassembly 32 is bonded to subassembly 34 by a thermosonic bonding horn 35 to form stacked chip package 10 ′.
  • Thermosonic bonding is widely used to permanently interconnect metallized silicon integrated circuits and other components into computers as well as into a myriad of other electronic equipment.
  • bonding may also be accomplished by a eutectic bonding process, a metal melting process, an atomic diffusion process, a heating process, or an ultrasonic heating process, for example.
  • the underfill 19 of the stacked chip package 10 ′ undergoes curing thereby completing the fabrication steps.
  • FIG. 5 depicts a cross-sectional schematic view of a stacked chip package 110 (see step 5 ) according to another exemplary embodiment of the invention.
  • FIG. 5 also depicts a schematic diagram depicting the process of assembling the stacked chip package 110 .
  • the stacked chip package 110 is similar to the stacked chip package 10 of FIG. 3A , with the exception that underfill 19 is replaced by a redistribution layer (RDL) 140 and a resin 142 .
  • RDL redistribution layer
  • the image sensor 114 of FIG. 5 includes a plurality of vias 122 (two shown) that are defined through its thickness.
  • Each of the vias 122 create an electronic interconnection between a respective aluminum pad 124 that is positioned on the top side of the image sensor 114 and solder or gold bumps on the top side of the RDL 140 .
  • the bumps are provided on a fan out pad on the top surface of the RDL 140 .
  • thermal pads on the RDL 140 for the purpose of heat dissipation.
  • the insulation layer of the RDL 140 may be composed of SiO 2 , Ajinomoto Build-up Film (ABF), or other organic materials, for example.
  • the top side of the DSP 116 is adhered to the recess 118 of the image sensor 114 by a layer of resin 142 .
  • the resin 142 could be a liquid type adhesive or a B-stage adhesive film, such as die attach adhesive film, for example.
  • the resin 142 is thermally insulative such that it thermally isolates the DSP 116 from the image sensor 114 .
  • Aluminum pads (not explicitly shown) on the bottom side of the DSP 116 are positioned face-down in contact with conductive regions on the top surface of the RDL 140 by vias that extend through the thickness of the RDL 140 .
  • the RDL 140 electrically interconnects the DSP 116 to the image sensor 114 .
  • a series of solder bumps 129 that are positioned on the bottom surface of the RDL 140 are electrically connected with the conductive regions on the top surface of the RDL 140 .
  • the solder bumps 129 of the RDL 140 are provided for connecting to a substrate, circuit board, or other device of an electronic component.
  • a subassembly 150 including the image sensor 114 , the lens 112 and other components is provided.
  • the subassembly 150 is large enough to form a plurality of stacked chip packages 110 (two shown).
  • a plurality of recesses 118 are formed on the bottom side surface of the sensor 114 .
  • the recesses 118 may be formed by an etching process or other chemical or physical method.
  • resin 142 is distributed in both recesses 118 , and two DSP's 116 (only one shown) are applied to the resin material 142 .
  • step 4 the subassembly formed in step 3 is singulated, or separated, into individual chip packages.
  • step 5 the top side of the RDL 140 is mounted to the bottom sides of the DSP 116 and the sensor 114 .
  • the bumps 129 are then added to the bottom side of the RDL 140 , thereby completing the fabrication steps. It should be understood that the foregoing steps are not necessarily limited to a particular sequence.
  • FIGS. 6A and 6B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to yet other exemplary embodiments of the invention.
  • the stacked chip package 210 shown in FIG. 6A is similar to the stacked chip package 10 , thus, the details of stacked chip package 10 also apply to stacked chip package 210 . Only significant differences between those chip packages will be described hereinafter.
  • the components of the stacked chip package 210 are mechanically and electrically connected together by flip-chip and wire bonding. More particularly, in lieu of vias, the image sensor 214 is electrically interconnected with the substrate 220 by wire leads 245 .
  • the wire leads 245 may be composed of gold, aluminum or copper, for example.
  • the top side of the DSP 216 is adhered to the recess 218 of the image sensor 214 by a layer of resin 242 , similar to the resin 142 of FIG. 5 .
  • the aluminum pads (not explicitly shown) of the DSP 216 are positioned face down toward the substrate 220 .
  • the bumps 228 which may be composed of solder or gold, that are positioned on the aluminum pads of the DSP 216 are positioned in contact with conductive regions on the top side of the substrate 220 .
  • vias and traces within the substrate 220 electrically interconnect the leads 245 of the sensor 214 with the bumps 228 of the DSP 216 .
  • a die-attach adhesive 219 mounts the sensor 214 and the DSP 216 to the substrate 220 .
  • the cover glass 212 is mounted to the substrate 220 by a dam 221 .
  • the function of the dam 221 is to support the lens or cover glass 12 and form an air cavity in the package.
  • the dam material may be BT, FR4, FR5, thermoplastic, epoxy molding compound, ceramic.
  • the stacked chip package 310 shown in FIG. 6B is similar to the stacked chip package 210 of FIG. 6A , thus, the details of stacked chip packages 10 and 210 also apply to stacked chip package 310 . Only the significant differences between those chip packages will be described hereinafter.
  • a liquid compound 347 mounts the cover glass 312 , the substrate 320 and the image sensor 314 together.
  • the leads 345 are encapsulated within the liquid compound 347 .
  • FIGS. 7A and 7B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to still other exemplary embodiments of the invention.
  • the stacked chip package 410 shown in FIG. 7A is similar to the stacked chip package 210 of FIG. 6A , thus, the details of stacked chip packages 10 and 210 also apply to stacked chip package 410 . Only significant differences between those chip packages will be described hereinafter.
  • the primary components of the stacked chip package 10 are mechanically and electrically connected together by wire bonding.
  • the DSP 416 is electrically interconnected with the substrate 420 by wire leads 455
  • the image sensor 414 is electrically connected to the substrate 420 by wire leads 445 .
  • the leads may be wires composed of gold, aluminum or copper, for example.
  • vias and traces within the substrate 420 electrically interconnect the leads 445 of the sensor 414 with the leads 455 of the DSP 416 such that the DSP 416 and the sensor 414 are in electrical communication.
  • the DSP 416 is bonded to the substrate 420 by a die attach adhesive 457 . Unlike the DSP of FIG. 6A , the DSP 416 is not bonded to the recess 418 formed in the image sensor 414 .
  • the stacked chip package 510 shown in FIG. 7B is similar to the stacked chip package 310 of FIG. 6B , thus, the details of the stacked chip package 310 also apply to the stacked chip package 510 . Only significant differences between those chip packages will be described hereinafter.
  • the DSP 516 is bonded to the substrate 520 by a die attach adhesive 557 .
  • the DSP 516 is electrically interconnected with the substrate 520 by leads 555
  • the image sensor 514 is electrically connected to the substrate 520 by leads 545 .
  • vias and traces within the substrate 520 electrically interconnect the leads 545 of the sensor 514 with the leads 555 of the DSP 516 such that the DSP 516 and the sensor 514 are in electrical communication.
  • FIG. 8 depicts a cross-sectional schematic view of a stacked chip package for an image sensor according to another exemplary embodiment of the invention.
  • the stacked chip package 610 shown in FIG. 8 is similar to the stacked chip package 110 of FIG. 5 , thus, the details of stacked chip package 110 also apply to stacked chip package 610 . Only significant differences between those chip packages will be described hereinafter.
  • the DSP 616 is indirectly connected to the bottom side of the RDL 640 by leads 642 .
  • the materials of the stacked chip packages disclosed herein may vary as described hereinafter.
  • the lens which may also be referred to in the art as cover glass, is optionally composed of glass.
  • the image sensor may be a charge coupled device (CCD) and/or a complementary MOSFET oxidized semiconductor (CMOS).
  • CMOS complementary MOSFET oxidized semiconductor
  • the image sensor may be at least partially composed of Silicon material.
  • the DSP may be any DSP known to those skilled in the art that is configured to convert an analog signal output from an image sensor chip to a digital signal.
  • the interposer may be composed of silicon with a redistribution layer (RDL), BT, FR4, FR5, ceramic, an organic substrate, or any other material that is known to those skilled in the art.
  • RDL redistribution layer
  • BT BT
  • FR4 FR5
  • ceramic organic substrate
  • organic substrate or any other material that is known to those skilled in the art.
  • the terms ‘interposer’ and ‘substrate’ may be used interchangeably.
  • the interposer may also be considered as a substrate.
  • a substrate is a part that provides the chip package with mechanical base support and forms an electrical interface that allows access to the devices housed within the chip package.
  • An interposer is an intermediate layer that is often used for interconnection routing or as a ground/power plane.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Disclosed herein is a stacked chip package including an image sensor including a recess formed on a surface thereof, and a digital signal processor chip that is positioned within the recess. Also disclosed herein is a method of fabricating a stacked chip package including the steps of forming a recess on a surface of an image sensor and positioning a digital signal processor in the recess of the image sensor.

Description

CROSS REFERENCE TO RELATED APPLICATIONS
This application claims priority to U.S. Provisional Patent Application No. 61/480,061, filed Apr. 28, 2011, which is incorporated by reference herein in its entirety and for all purposes.
FIELD OF THE INVENTION
The present invention relates to a chip package for an image sensor and a manufacturing method thereof.
BACKGROUND OF THE INVENTION
As described in U.S. Pat. No. 7,701,044, which is incorporated by reference, an image sensor is a device that changes light indicating an image of an object into an electric signal for each pixel. An image sensor is used for small electronic products capable of photographing still images and motion pictures, for example, digital cameras, mobile phones, PDAs (personal digital assistants), rear view monitoring cameras included in bumpers, and interphones. The image sensor includes a charge coupled device (CCD) and/or a complementary MOSFET oxidized semiconductor (CMOS). The image sensor is a type of semiconductor chip.
A semiconductor chip is packaged for protection from external shocks, the environment and the exchange of electric signals with the outside. An image sensor chip is connected to a digital signal processor (DSP) to process an electric signal output from the image sensor chip and to a memory to store image information. Also, the image sensor chip is electrically interconnected to a flexible printed circuit board (FPCB) and a hard printed circuit board (HPCB) to exchange electric signals with an electronic device outside a camera module.
FIGS. 1 and 2 are sectional views showing conventional chip packages for an image sensor. Referring to FIG. 1, an image sensor chip 1 is wire-bonded to the upper surface of an HPCB 6 via a metal wire 3. A DSP 7 is electrically connected to the HPCB 6 by being flipchip bonded to the lower surface of the HPCB 6. An infrared (IR) cut filter 9 is arranged above an image sensor 2. Referring to FIG. 2, the image sensor chip 1 is arranged at the lowermost position of a housing 4. A peripheral part of the upper surface of the image sensor chip 1 is electrically connected to the FPCB 8 via flip chip bonding 1 a. The DSP 7 is located at a portion of the FPCB 8 positioned outside the housing 4.
While chip packages for an image sensor are known, there exists a continuous need to reduce the size of those chip packages in the interest of minimizing the electronic products in which those chip packages are housed.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view of a conventional chip package for an image sensor.
FIG. 2 is a cross-sectional view of another conventional chip package for an image sensor.
FIGS. 3A and 3B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to exemplary embodiments of the invention.
FIG. 4 is a schematic diagram depicting the process of assembling the stacked chip package of FIG. 3B.
FIG. 5 depicts a cross-sectional schematic view of a stacked chip package for an image sensor (see step 5) according to another exemplary embodiment of the invention, and a schematic diagram depicting the process of assembling the stacked chip package.
FIGS. 6A and 6B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to yet other exemplary embodiments of the invention.
FIGS. 7A and 7B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to still other exemplary embodiments of the invention.
FIG. 8 depicts a cross-sectional schematic view of a stacked chip package for an image sensor according to another exemplary embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
FIGS. 3A and 3B depict cross-sectional views of two different variations of a stacked chip package 10 and 10′, respectively, in which a DSP is embedded in a cavity formed on a lower surface of an image sensor, according to exemplary embodiments of the invention. The primary advantages of the stacked chip package arrangements shown in FIGS. 3A and 3B are the decreased length of the signal transfer route between the DSP and the image sensor and the reduction in overall size as compared with conventional chip packages for an image sensor.
Referring to FIGS. 3A and 3B, the stacked chip packages 10 and 10′, respectively, each generally comprises a lens 12 (or cover glass), a image sensor 14 mounted to the lens 12 by a resin 13, a DSP 16 that is embedded within a recess 18 that is defined on the bottom side of the image sensor 14, an underfill 19 coated on the bottom-side surfaces of the DSP 16 and the image sensor 14, and an interposer/substrate 20 applied to the underfill 19.
In the assembled form of the stacked chip packages 10 and 10′, a slight gap exists between the walls of the DSP 16 and the walls of the recess 18 of the image sensor 14. The gap is useful for thermally isolating the DSP 16 from the image sensor 14. Additionally, in the assembled form, the lower surfaces of the DSP 16 and the image sensor 14 are substantially coplanar (i.e., reside on the same plane).
The components of the stacked chip package 10 are mechanically and electrically connected together by flip-chip bonding. More particularly, in both FIGS. 3A and 3B, the image sensor 14 includes a plurality of vias 22 (two shown) that are defined through its thickness each of which create an electronic interconnection between a respective aluminum pad 24 that is positioned on the top side of the image sensor 14 and a respective bump 26 (or bump 26′ in FIG. 3B) on the bottom side of the image sensor 14.
The aluminum pads (not explicitly shown) of the DSP 16 are positioned face down toward the interposer 20. The bumps 28 and 28′ of FIGS. 3A and 3B, respectively, that are positioned on the aluminum pads of the DSP 16 are positioned in contact with conductive regions on the top side of the interposer 20. The underfill 19 fills in the gap between the sensor 14 and the interposer 20 as well as the gap between the DSP 16 and the interposer 20. A series of solder bumps 29 that are positioned on the bottom surface of the interposer 20 are electrically connected with the conductive regions on the top surface of the interposer 20. The solder bumps 29 are provided for connecting to a substrate, circuit board, or other device of an electronic component.
One primary difference between the chip packages shown in FIGS. 3A and 3B is that the package 10 in FIG. 3A includes solder bumps 26 and 28 to accomplish electrical interconnection, whereas the package 10′ in FIG. 3B includes gold stud bumps 26′ and 28′ to accomplish electrical interconnection.
Bonding between the image sensor 14, the DSP 16 and the interposer 20 may be accomplished by a eutectic bonding process, a metal melting process, an atomic diffusion process, a heating process, an ultrasonic heating process and/or a thermosonic heating process, for example.
In operation, the image sensor 14 captures an image through the lens 12 and converts the image to an analog signal. The analog signal is transmitted to the DSP 16 via the bumps 26, the interposer 20, and the bumps 28. The DSP 16 processes and digitizes the analog signal, and transmits the digitized signal via the bumps 28 to the interposer 20, and, via the bumps 29 of the interposer 20, to a circuit an electronic device (not shown) that is connected to the bumps 29.
FIG. 4 is a schematic diagram depicting an exemplary process of assembling the stacked chip package 10′ of FIG. 3B. The process generally includes ten steps, which are labeled 1 through 10. The steps are not necessarily limited to the particular sequence that is described below, and may vary from that shown and described. At step 1, the DSP 16 is provided. At step 2, gold stud bumps 28′ are added to the bottom side (i.e., the functional side pad) of the DSP 16. At step 3, a subassembly 30 is provided. The subassembly 30 includes the image sensor 14, the lens or cover glass 12 and other components that are mounted together. At step 4, the recess 18 is formed on the bottom side surface of the sensor 14. The recess 18 may be formed by an etching process or other chemical or physical method. At step 5, gold stud bumps 26′ are added to the bottom side of the image sensor 14, thereby forming subassembly 32.
At step 6, the interposer 20 is provided. At step 7, an underfill layer is applied to the top surface of the interposer 20. At step 8, the DSP 16 is bonded to the underfill 19 by a thermosonic bonding horn 33 to form subassembly 34. At step 9, subassembly 32 is bonded to subassembly 34 by a thermosonic bonding horn 35 to form stacked chip package 10′. Thermosonic bonding is widely used to permanently interconnect metallized silicon integrated circuits and other components into computers as well as into a myriad of other electronic equipment. As noted previously, bonding may also be accomplished by a eutectic bonding process, a metal melting process, an atomic diffusion process, a heating process, or an ultrasonic heating process, for example. At step 10, the underfill 19 of the stacked chip package 10′ undergoes curing thereby completing the fabrication steps.
FIG. 5 depicts a cross-sectional schematic view of a stacked chip package 110 (see step 5) according to another exemplary embodiment of the invention. FIG. 5 also depicts a schematic diagram depicting the process of assembling the stacked chip package 110. The stacked chip package 110 is similar to the stacked chip package 10 of FIG. 3A, with the exception that underfill 19 is replaced by a redistribution layer (RDL) 140 and a resin 142. The previous description of chip pages 10 also applies to chip package 110.
More particularly, the image sensor 114 of FIG. 5 includes a plurality of vias 122 (two shown) that are defined through its thickness. Each of the vias 122 create an electronic interconnection between a respective aluminum pad 124 that is positioned on the top side of the image sensor 114 and solder or gold bumps on the top side of the RDL 140. Although not explicitly shown, the bumps are provided on a fan out pad on the top surface of the RDL 140. There may also be thermal pads on the RDL 140 for the purpose of heat dissipation. The insulation layer of the RDL 140 may be composed of SiO2, Ajinomoto Build-up Film (ABF), or other organic materials, for example.
The top side of the DSP 116 is adhered to the recess 118 of the image sensor 114 by a layer of resin 142. The resin 142 could be a liquid type adhesive or a B-stage adhesive film, such as die attach adhesive film, for example. The resin 142 is thermally insulative such that it thermally isolates the DSP 116 from the image sensor 114. Aluminum pads (not explicitly shown) on the bottom side of the DSP 116 are positioned face-down in contact with conductive regions on the top surface of the RDL 140 by vias that extend through the thickness of the RDL 140. The RDL 140 electrically interconnects the DSP 116 to the image sensor 114.
A series of solder bumps 129 that are positioned on the bottom surface of the RDL 140 are electrically connected with the conductive regions on the top surface of the RDL 140. The solder bumps 129 of the RDL 140 are provided for connecting to a substrate, circuit board, or other device of an electronic component.
Referring now to an exemplary method of assembling the stacked chip package 110, at step 1 in FIG. 5, a subassembly 150 including the image sensor 114, the lens 112 and other components is provided. The subassembly 150 is large enough to form a plurality of stacked chip packages 110 (two shown). At step 2, a plurality of recesses 118 are formed on the bottom side surface of the sensor 114. The recesses 118 may be formed by an etching process or other chemical or physical method. At step 3, resin 142 is distributed in both recesses 118, and two DSP's 116 (only one shown) are applied to the resin material 142. At step 4, the subassembly formed in step 3 is singulated, or separated, into individual chip packages. At step 5, the top side of the RDL 140 is mounted to the bottom sides of the DSP 116 and the sensor 114. The bumps 129 are then added to the bottom side of the RDL 140, thereby completing the fabrication steps. It should be understood that the foregoing steps are not necessarily limited to a particular sequence.
FIGS. 6A and 6B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to yet other exemplary embodiments of the invention. The stacked chip package 210 shown in FIG. 6A is similar to the stacked chip package 10, thus, the details of stacked chip package 10 also apply to stacked chip package 210. Only significant differences between those chip packages will be described hereinafter.
The components of the stacked chip package 210 are mechanically and electrically connected together by flip-chip and wire bonding. More particularly, in lieu of vias, the image sensor 214 is electrically interconnected with the substrate 220 by wire leads 245. The wire leads 245 may be composed of gold, aluminum or copper, for example.
The top side of the DSP 216 is adhered to the recess 218 of the image sensor 214 by a layer of resin 242, similar to the resin 142 of FIG. 5. The aluminum pads (not explicitly shown) of the DSP 216 are positioned face down toward the substrate 220. The bumps 228, which may be composed of solder or gold, that are positioned on the aluminum pads of the DSP 216 are positioned in contact with conductive regions on the top side of the substrate 220. Although not shown, vias and traces within the substrate 220 electrically interconnect the leads 245 of the sensor 214 with the bumps 228 of the DSP 216. A die-attach adhesive 219 mounts the sensor 214 and the DSP 216 to the substrate 220.
The cover glass 212 is mounted to the substrate 220 by a dam 221. The function of the dam 221 is to support the lens or cover glass 12 and form an air cavity in the package. The dam material may be BT, FR4, FR5, thermoplastic, epoxy molding compound, ceramic. The stacked chip package 310 shown in FIG. 6B is similar to the stacked chip package 210 of FIG. 6A, thus, the details of stacked chip packages 10 and 210 also apply to stacked chip package 310. Only the significant differences between those chip packages will be described hereinafter. In lieu of the dam of FIG. 6A, a liquid compound 347 mounts the cover glass 312, the substrate 320 and the image sensor 314 together. The leads 345 are encapsulated within the liquid compound 347.
FIGS. 7A and 7B are cross-sectional schematic views of two different variations of a stacked chip package for an image sensor, according to still other exemplary embodiments of the invention. The stacked chip package 410 shown in FIG. 7A is similar to the stacked chip package 210 of FIG. 6A, thus, the details of stacked chip packages 10 and 210 also apply to stacked chip package 410. Only significant differences between those chip packages will be described hereinafter.
In the stacked chip package 410 of FIG. 7A, the primary components of the stacked chip package 10 are mechanically and electrically connected together by wire bonding. In lieu of vias, the DSP 416 is electrically interconnected with the substrate 420 by wire leads 455, and the image sensor 414 is electrically connected to the substrate 420 by wire leads 445. The leads may be wires composed of gold, aluminum or copper, for example. Although not shown, vias and traces within the substrate 420 electrically interconnect the leads 445 of the sensor 414 with the leads 455 of the DSP 416 such that the DSP 416 and the sensor 414 are in electrical communication. The DSP 416 is bonded to the substrate 420 by a die attach adhesive 457. Unlike the DSP of FIG. 6A, the DSP 416 is not bonded to the recess 418 formed in the image sensor 414.
The stacked chip package 510 shown in FIG. 7B is similar to the stacked chip package 310 of FIG. 6B, thus, the details of the stacked chip package 310 also apply to the stacked chip package 510. Only significant differences between those chip packages will be described hereinafter. In the stacked chip package 510 of FIG. 7B, the DSP 516 is bonded to the substrate 520 by a die attach adhesive 557. In lieu of vias, the DSP 516 is electrically interconnected with the substrate 520 by leads 555, and the image sensor 514 is electrically connected to the substrate 520 by leads 545. Although not shown, vias and traces within the substrate 520 electrically interconnect the leads 545 of the sensor 514 with the leads 555 of the DSP 516 such that the DSP 516 and the sensor 514 are in electrical communication.
FIG. 8 depicts a cross-sectional schematic view of a stacked chip package for an image sensor according to another exemplary embodiment of the invention. The stacked chip package 610 shown in FIG. 8 is similar to the stacked chip package 110 of FIG. 5, thus, the details of stacked chip package 110 also apply to stacked chip package 610. Only significant differences between those chip packages will be described hereinafter. In lieu of mounting the DSP 616 directly to the RDL 640, such as is shown in FIG. 5, the DSP 616 is indirectly connected to the bottom side of the RDL 640 by leads 642.
The materials of the stacked chip packages disclosed herein may vary as described hereinafter. The lens, which may also be referred to in the art as cover glass, is optionally composed of glass. The image sensor may be a charge coupled device (CCD) and/or a complementary MOSFET oxidized semiconductor (CMOS). The image sensor may be at least partially composed of Silicon material. The DSP may be any DSP known to those skilled in the art that is configured to convert an analog signal output from an image sensor chip to a digital signal.
The interposer may be composed of silicon with a redistribution layer (RDL), BT, FR4, FR5, ceramic, an organic substrate, or any other material that is known to those skilled in the art. The terms ‘interposer’ and ‘substrate’ may be used interchangeably. The interposer may also be considered as a substrate. A substrate is a part that provides the chip package with mechanical base support and forms an electrical interface that allows access to the devices housed within the chip package. An interposer is an intermediate layer that is often used for interconnection routing or as a ground/power plane.

Claims (19)

What is claimed:
1. A stacked chip package comprising:
an image sensor including a recess formed on a surface thereof;
a digital signal processor chip that is positioned within the recess, wherein a mounting surface of the image sensor and a mounting surface of the digital signal processor chip are both mounted to a substrate that includes a plurality of vias and a plurality of traces; and
adhesive securing the digital signal processor chip to the substrate.
2. The stacked chip package of claim 1, wherein the recess is formed on the mounting surface of the image sensor.
3. The stacked chip package of claim 1, wherein the mounting surfaces of the image sensor and the digital signal processor chip are substantially coplanar.
4. The stacked chip package of claim 1, wherein the image sensor is electrically connected to the substrate by vias or wire leads.
5. The stacked chip package of claim 1, wherein the digital signal processor chip is electrically connected to the substrate by vias or wire leads.
6. The stacked chip package of claim 1, wherein traces and vias of the substrate electrically connect the image sensor to the digital signal processor chip.
7. The stacked chip package of claim 1, further comprising a lens or cover glass positioned adjacent the image sensor.
8. An image sensor including a recess formed on a surface thereof that is sized to accommodate a digital signal processor of a chip package, wherein the recess is larger than the digital signal processor such that there is a thermally insulating gap between the digital signal processor and the image sensor.
9. The image sensor of claim 8, wherein the recess is formed on an bottom-side surface of the image sensor, and a top-side surface of the image sensor is configured to be exposed to light.
10. The image sensor of claim 9 further comprising a conductive region on the top-side surface of the image sensor that is electrically connected to a via that extends between the top-side surface and the bottom-side surface of the image sensor.
11. The image sensor of claim 10 further comprising a bump that is positioned on the bottom-side surface of the image sensor and connected to the via.
12. The image sensor of claim 9, wherein the recess is etched into the surface of the image sensor.
13. A method of fabricating a stacked chip package comprising:
forming a recess on a surface of an image sensor that is sized to accommodate a digital signal processor; and
mounting the digital signal processor and the image sensor onto a substrate, wherein the mounting step comprises orienting mounting surfaces of the digital signal processor and the image sensor such that the mounting surfaces are substantially coplanar and comprises securing the digital signal processor to the substrate with adhesive.
14. The method of claim 13, wherein the forming step comprises etching the recess in the surface of the image sensor.
15. The method of claim 13, further comprising the step of positioning a digital signal processor in the recess of the image sensor.
16. The method of claim 13, wherein the mounting step comprises electrically connecting the digital signal processor and the image sensor to the substrate by either wire bonding or flip chip bonding.
17. The method of claim 13, further comprising the step of mounting a lens or cover glass adjacent the image sensor.
18. The stacked chip package of claim 1, wherein the mounting surfaces of the digital signal processor chip and the image sensor comprise lower surfaces of the digital signal processor chip and the image sensor, respectively, the stacked chip package further comprising:
wire leads extending between an upper surface of the digital signal processor chip and the substrate.
19. The stacked chip package of claim 18 further comprising:
additional wire leads extending between an upper surface of the image sensor and the substrate.
US13/352,844 2011-04-28 2012-01-18 Stacked sensor packaging structure and method Active 2032-11-17 US8791536B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/352,844 US8791536B2 (en) 2011-04-28 2012-01-18 Stacked sensor packaging structure and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161480061P 2011-04-28 2011-04-28
US13/352,844 US8791536B2 (en) 2011-04-28 2012-01-18 Stacked sensor packaging structure and method

Publications (2)

Publication Number Publication Date
US20120273908A1 US20120273908A1 (en) 2012-11-01
US8791536B2 true US8791536B2 (en) 2014-07-29

Family

ID=47067264

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/352,844 Active 2032-11-17 US8791536B2 (en) 2011-04-28 2012-01-18 Stacked sensor packaging structure and method

Country Status (1)

Country Link
US (1) US8791536B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120248553A1 (en) * 2009-11-19 2012-10-04 Dai Nippon Printing Co., Ltd. Sensor device and manufacturing method thereof
US10177188B2 (en) 2016-08-04 2019-01-08 Samsung Electronics Co., Ltd. Semiconductor package and method of fabricating the same
US10418396B1 (en) * 2018-04-03 2019-09-17 Semiconductor Components Industries, Llc Stacked image sensor package
US20220084972A1 (en) * 2019-11-04 2022-03-17 Advanced Semiconductor Engineering, Inc. Electronic device package and method for manufacturing the same

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890047B2 (en) * 2011-09-21 2014-11-18 Aptina Imaging Corporation Stacked-chip imaging systems
US9013615B2 (en) * 2011-09-21 2015-04-21 Semiconductor Components Industries, Llc Image sensor with flexible interconnect capabilities
US9185307B2 (en) 2012-02-21 2015-11-10 Semiconductor Components Industries, Llc Detecting transient signals using stacked-chip imaging systems
TWI560825B (en) * 2013-02-08 2016-12-01 Xintec Inc Chip scale package structure and manufacturing method thereof
CN103236424A (en) * 2013-04-16 2013-08-07 江苏物联网研究发展中心 Wafer level packaging structure and packaging method
CN103633036B (en) * 2013-08-07 2017-03-08 中国科学院电子学研究所 Electric-field sensor potted element based on highly resistant material
US9368535B2 (en) * 2014-02-28 2016-06-14 Semiconductor Components Industries, Llc Imaging systems with flip chip ball grid arrays
US11310402B2 (en) * 2015-08-25 2022-04-19 Gingy Technology Inc. Image capturing device and fingerprint image capturing device
US20160141280A1 (en) * 2014-11-14 2016-05-19 Omnivision Technologies, Inc. Device-Embedded Image Sensor, And Wafer-Level Method For Fabricating Same
US9653504B1 (en) * 2015-11-03 2017-05-16 Omnivision Technologies, Inc. Chip-scale packaged image sensor packages with black masking and associated packaging methods
CN106449607B (en) * 2016-11-28 2019-02-05 南通壹选工业设计有限公司 A kind of MIM capacitor structure
CN106449372B (en) * 2016-11-28 2019-04-30 新昌县诺趣智能科技有限公司 A kind of manufacturing method of MIM capacitor structure
US10312276B2 (en) * 2017-08-02 2019-06-04 Omnivision Technologies, Inc. Image sensor package to limit package height and reduce edge flare
CN110290293B (en) * 2018-03-19 2021-12-31 台湾东电化股份有限公司 Photosensitive module
US11081510B2 (en) * 2018-03-19 2021-08-03 Tdk Taiwan Corp. Photosensitive module having transparent plate and image sensor
JP2019213151A (en) * 2018-06-08 2019-12-12 ソニーセミコンダクタソリューションズ株式会社 Imaging apparatus
US10998361B2 (en) * 2018-09-22 2021-05-04 Omnivision Technologies, Inc. Image-sensor package and associated method
US11069670B2 (en) * 2018-11-20 2021-07-20 Ningbo Semiconductor International Corporation Camera assembly and packaging method thereof, lens module, and electronic device
CN114127940A (en) * 2019-07-23 2022-03-01 索尼半导体解决方案公司 Semiconductor package
US11616026B2 (en) * 2020-01-17 2023-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706553A (en) 1984-03-05 1987-11-17 Phoenix Controls Corp. Fume hood controller
US6933617B2 (en) 2000-12-15 2005-08-23 Eaglestone Partners I, Llc Wafer interposer assembly
US7042077B2 (en) 2004-04-15 2006-05-09 Intel Corporation Integrated circuit package with low modulus layer and capacitor/interposer
US7122458B2 (en) 2004-07-22 2006-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating pad redistribution layer
US20080308928A1 (en) 2007-06-13 2008-12-18 Industrial Technology Research Institute Image sensor module with a three-dimensional die-stacking structure
US7592202B2 (en) 2006-03-31 2009-09-22 Intel Corporation Embedding device in substrate cavity
US20090315180A1 (en) 2008-06-20 2009-12-24 Lee Kevin J Multi-layer thick metallization structure for a microelectronic device, intergrated circuit containing same, and method of manufacturing an integrated circuit containing same
US7646087B2 (en) 2005-04-18 2010-01-12 Mediatek Inc. Multiple-dies semiconductor device with redistributed layer pads
US7701044B2 (en) 2006-10-19 2010-04-20 Samsung Techwin Co., Ltd. Chip package for image sensor and method of manufacturing the same
US20120194719A1 (en) 2011-02-01 2012-08-02 Scott Churchwell Image sensor units with stacked image sensors and image processors

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706553A (en) 1984-03-05 1987-11-17 Phoenix Controls Corp. Fume hood controller
US4706553B1 (en) 1984-03-05 1991-07-23 Phoenix Controls Corp
US6933617B2 (en) 2000-12-15 2005-08-23 Eaglestone Partners I, Llc Wafer interposer assembly
US7042077B2 (en) 2004-04-15 2006-05-09 Intel Corporation Integrated circuit package with low modulus layer and capacitor/interposer
US7122458B2 (en) 2004-07-22 2006-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating pad redistribution layer
US7646087B2 (en) 2005-04-18 2010-01-12 Mediatek Inc. Multiple-dies semiconductor device with redistributed layer pads
US7592202B2 (en) 2006-03-31 2009-09-22 Intel Corporation Embedding device in substrate cavity
US7701044B2 (en) 2006-10-19 2010-04-20 Samsung Techwin Co., Ltd. Chip package for image sensor and method of manufacturing the same
US20080308928A1 (en) 2007-06-13 2008-12-18 Industrial Technology Research Institute Image sensor module with a three-dimensional die-stacking structure
US7663231B2 (en) 2007-06-13 2010-02-16 Industrial Technology Research Institute Image sensor module with a three-dimensional die-stacking structure
US20090315180A1 (en) 2008-06-20 2009-12-24 Lee Kevin J Multi-layer thick metallization structure for a microelectronic device, intergrated circuit containing same, and method of manufacturing an integrated circuit containing same
US20120194719A1 (en) 2011-02-01 2012-08-02 Scott Churchwell Image sensor units with stacked image sensors and image processors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Borthakur et al., U.S. Appl. No. 13/972,249, filed Aug. 21, 2013.

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120248553A1 (en) * 2009-11-19 2012-10-04 Dai Nippon Printing Co., Ltd. Sensor device and manufacturing method thereof
US9476898B2 (en) * 2009-11-19 2016-10-25 Dai Nippon Printing Co., Ltd. Sensor device and manufacturing method thereof
US10177188B2 (en) 2016-08-04 2019-01-08 Samsung Electronics Co., Ltd. Semiconductor package and method of fabricating the same
US10868073B2 (en) 2016-08-04 2020-12-15 Samsung Electronics Co., Ltd. Method of fabricating semiconductor package
US11482554B2 (en) 2016-08-04 2022-10-25 Samsung Electronics Co., Ltd. Semiconductor package and method of fabricating the same
US10418396B1 (en) * 2018-04-03 2019-09-17 Semiconductor Components Industries, Llc Stacked image sensor package
US20220084972A1 (en) * 2019-11-04 2022-03-17 Advanced Semiconductor Engineering, Inc. Electronic device package and method for manufacturing the same
US11837566B2 (en) * 2019-11-04 2023-12-05 Advanced Semiconductor Engineering, Inc. Electronic device package and method for manufacturing the same

Also Published As

Publication number Publication date
US20120273908A1 (en) 2012-11-01

Similar Documents

Publication Publication Date Title
US8791536B2 (en) Stacked sensor packaging structure and method
US7202460B2 (en) Camera module for compact electronic equipments
US10008533B2 (en) Semiconductor package
US7701044B2 (en) Chip package for image sensor and method of manufacturing the same
US7315078B2 (en) Chip-stacked semiconductor package and method for fabricating the same
US20140264808A1 (en) Chip arrangements, chip packages, and a method for manufacturing a chip arrangement
KR102005351B1 (en) Fan-out sensor package
US10566369B2 (en) Image sensor with processor package
KR20190072319A (en) Fan-out sensor package
JP2010262992A (en) Semiconductor module and portable apparatus
TWI688059B (en) Semiconductor package structure and manufacturing method thereof
KR20140028700A (en) Semiconductor pakage
US10115673B1 (en) Embedded substrate package structure
EP2575176B1 (en) Folded tape package for electronic devices
US12034029B2 (en) Imaging device and method for producing imaging device
KR100526191B1 (en) Solid-State Imaging Apparatus
KR20160031523A (en) Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US7205095B1 (en) Apparatus and method for packaging image sensing semiconductor chips
JP6409575B2 (en) Multilayer semiconductor device
KR100541650B1 (en) Solid-state Imaging Apparatus and Method For Manufacturing The Same
TWI733093B (en) Semiconductor package structure and manufacturing method thereof
US8525312B2 (en) Area array quad flat no-lead (QFN) package
US20230254975A1 (en) Semiconductor packages having circuit boards
KR20050119101A (en) Method for manufacturing solid-state imaging apparatus
JP2011096952A (en) Circuit device and method of manufacturing the same

Legal Events

Date Code Title Description
AS Assignment

Owner name: APTINA IMAGING CORPORATION, CAYMAN ISLANDS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KINSMAN, LARRY;HSIEH, YU TE;SIGNING DATES FROM 20120113 TO 20120116;REEL/FRAME:027668/0684

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551)

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8