US8286114B2 - 3-dimensional device design layout - Google Patents
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- US8286114B2 US8286114B2 US11/833,119 US83311907A US8286114B2 US 8286114 B2 US8286114 B2 US 8286114B2 US 83311907 A US83311907 A US 83311907A US 8286114 B2 US8286114 B2 US 8286114B2
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- 238000000034 method Methods 0.000 claims abstract description 38
- 238000002955 isolation Methods 0.000 claims description 40
- 238000004590 computer program Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000001186 cumulative effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7858—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Definitions
- the present invention relates generally to semiconductors and, more particularly, to a system and method for specifying a design layout for three-dimensional devices.
- MOSFET metal-oxide-semiconductor field effect transistors
- Phenomena such as reduced gate control associated with transistors with short channel lengths are termed short-channel effects.
- Increased body doping concentration, reduced gate oxide thickness, and ultra-shallow source/drain junctions are ways to suppress short-channel effects.
- approaches involving the use of three-dimensional devices, such as fin field-effect transistors (finFETs) are being investigated to improve the short channel effects.
- fins are produced by etching a silicon substrate to form the fins.
- a planar device typically has a single, large active area, whereas a finFET device may have multiple fins. Each fin must be defined on the layout, and may require a substantial increase in effort and expense to define.
- a method of generating a layout having a finFET device includes providing a layout including a first active area, the first active area having a first width.
- a plurality of second active areas is automatically generated such that the width of the plurality of second active areas (plus the intermediate isolation regions) is equivalent to the first width of the first active area.
- a method of generating a layout of a semiconductor device having three-dimensional active areas includes receiving a first layout having one or more planar active areas. The width of each of the planar active areas is determined, and an equivalent number of three-dimensional active areas occupying the same total area are determined for each of the planar active areas. A layout is then created having the three-dimensional active areas.
- a computer program product for generating a layout having a finFET.
- the computer program product includes computer program code for receiving a first layout having a plurality of planar active areas.
- Computer program code determines a number of redefined active areas for each of the planar active areas, wherein the redefined active areas have a total width less than or equal to a width of the respective planar active area.
- FIG. 1 is a block diagram of a system incorporating embodiments of the present invention
- FIG. 2 is an overview of an embodiment of the present invention
- FIG. 3 is a data flow diagram illustrating steps that may be performed to create a planar design corresponding to a 3-D structure in accordance with an embodiment of the present invention
- FIG. 4 is a data flow diagram illustrating steps that may be performed to convert a planar design to a 3-D design in accordance with an embodiment of the present invention.
- FIGS. 5-9 are examples of other embodiments of the present invention.
- the present invention will be described with respect to preferred embodiments in a specific context, namely a layout design including a finFET.
- the invention may also be applied, however, to other 3-dimensional devices, including raised fuses, resistors, and the like.
- FIG. 1 there is shown a block diagram of a processing system 100 in accordance with an embodiment of the present invention.
- the processing system 100 is provided for illustrative purposes only. Accordingly, one of ordinary skill in the art will realize that other components and configurations may be used.
- the processing system 100 includes additional components not illustrated in FIG. 1 .
- the processing system 100 may include power supplies, cables, a motherboard, removable storage media, cases, a keyboard and mouse, and the like. These other components, although not shown, are considered part of the processing system 100 .
- the processing system 100 includes a computer system 110 and one or more external devices, such as a display 112 , external storage 114 , and the like.
- the computer system 110 may be, for example, a desktop computer, a laptop computer, a workstation, a graphics computer, specialized equipment, or the like.
- the computer system 110 includes a processor 118 , memory (e.g., RAM) 120 , a video adapter 122 , internal storage (e.g., a hard drive) 124 , and an input/output interface unit 126 interconnected via a bus 130 .
- the bus 130 may include one or more different types of bus architectures, including a memory bus, a peripheral bus, video bus, or the like.
- the processor 118 may comprise any suitable electronic data processor, including a PentiumTM processor from Intel Corp., an Athlon processor from Advanced Micro Devices, Inc., a Reduced Instruction Set Computer (RISC), Application-Specific Integrated Circuit (ASIC), or the like.
- the memory 120 may comprise any type or combination of system memory such as static random access memory (SRAM), dynamic random access memory (DRAM), synchronous DRAM (SDRAM), read-only memory (ROM), or the like.
- the memory 120 may include ROM for use at boot-up and DRAM for data storage for use while executing programs.
- the internal storage 124 may comprise any type of storage device, such as a hard drive, magnetic memory, an optical disk drive, or the like, configured to store programs and data.
- the video adapter 122 provides an interface to couple the processing system 110 to the display 112
- the input/output interface 126 provides an interface to other external devices, such as external storage 114 .
- the processing system 100 may also include a network interface 128 and/or a wireless interface (not shown).
- the network interface 128 allows the processor 118 to communicate with remote units via the network interface 128 and network 134 .
- the network interface 128 also allows the processor 118 to access remote data systems communicatively coupled to the network 134 .
- FIG. 2 illustrates an overview of an embodiment of the present invention.
- the process begins with a desired 3-D device 210 .
- the desired 3-D device 210 is analyzed to determine the number of 3-D structures (e.g., fins) 212 that is desired.
- a planar device 216 is created containing a planar device having an active area 218 of a size equivalent to the size occupied by the active areas (e.g., fins 212 ) of the desired 3-D device 210 plus any intermediate isolation areas.
- the planar device 216 includes an active area 218 and a gate electrode 220 , wherein the active area has an active area width of A w corresponding to the total area of the fins 212 plus the intermediate isolation region.
- the active area width A w is extracted from the planar device 216 and an equivalent 3-D structure is determined to occupy the equivalent area.
- the complete 3-D device layout 230 is then generated using the 3-D structure, such that an area occupied by fins 232 and an intermediate isolation region is equivalent to A w .
- the entire portion of the planar device 216 is replaced with fins 232 as illustrated in FIG. 2 .
- the intermediate isolation regions between adjacent fins 232 extend the entire length of the fins 232 .
- contacts to the fins 232 may be created.
- the contacts are formed as described in co-pending U.S. patent application Ser. No. 11/833,128, which is incorporated herein by reference.
- a designer may layout a design using the planar designs, which may be performed with less effort and more efficiently.
- the completed 3-D device layout may be generated automatically.
- the 3-D design layout is automatically generated by a software application, CAD tool, optical confinement tool, or the like.
- FIG. 3 is a data flow diagram illustrating steps that may be performed to specify a 3-D device using planar structures in accordance with an embodiment of the present invention.
- the 3-D structures refer to fins of a finFET in the following discussion. It should be understood, however, that the description disclosed below may be applied to other 3-dimensional devices, including raised fuses, resistors, and the like.
- the process begins in step 310 , wherein the number of fins that is desired in a design layout is determined.
- the number of fins will be determined by engineering techniques and may be based upon, among other things, the circuitry, saturation current, threshold current, size of each fin, size of the gate electrode, other operating characteristics, and the like.
- an equivalent active area of a planar device is determined.
- the equivalent active area of the planar device is equivalent in size to the size that would be required to accommodate the desired number of fins.
- the size of an active area of a planar device is determined based upon the number of fins in the desired device.
- the isolation width is the region between adjacent fins. Because a fin is assumed to be along opposing boundaries of the active area, the number of isolation regions between adjacent fins is one less than the number of desired fins.
- FIG. 9 illustrates an embodiment of the present invention in which a design utilizes an L-shaped planar active area 910 .
- the L-shaped active area 910 comprises a first section 912 and a second section 914 , wherein a first width W 1 of the first section 912 is wider than a second width W 2 of the second section 914 .
- a first width W 1 of the first section 912 is wider than a second width W 2 of the second section 914 .
- the first section 912 having the wider first width W 1 may be assumed to require a raised 3-D structure along opposing outer borders.
- equation (1) may be modified to determine the proper widths.
- the first width W 1 may be calculated in a similar manner as EAAS in equation (1) discussed above.
- the second section 914 borders the 3-D structure along the adjacent first section 912 , and thus, the second section 914 will not have a raised 3-D structure along both opposing borders, but rather will only have a raised 3-D structure along the border on the opposite side of the first section 912 .
- processing then proceeds to step 314 , wherein the integrated circuit is laid out using the equivalent active area size for a planar device (EAAS) calculated in the previous step.
- EAAS equivalent active area size for a planar device
- FIG. 4 is a data flow diagram illustrating steps that may be performed to generate a 3-D device layout from planar structures in accordance with an embodiment of the present invention.
- the process begins in step 410 , wherein a layout design specifying planar devices, such as that generated by the process discussed above with reference to FIG. 3 , is received.
- step 412 the size of the active areas is extracted, and in step 414 , a 3-D structure is determined to occupy the corresponding active area of the planar device.
- the 3-D structure is determined by the following equation:
- active areas of the planar device having multiple widths such as that illustrated in FIG. 9 , in the above equation may be used on each of the varying total widths (such as W 1 along the left side and W 1 +W 2 along the right side).
- a 3-D device layout is generated using the planar design received in step 410 and the 3-D device information determined in step 414 . It should also be noted that the layout can be used to directly modify an existing mask, thereby negating the need for additional or intermediate masks and processing steps.
- FIGS. 5-9 illustrate embodiments of the present invention.
- a planar device design 510 has been created.
- the planar device design 510 may be created using, for example, the process described above with reference to FIG. 3 .
- the planar device design 510 includes an active area 512 and a gate 514 .
- the active area 512 has an active area width of A w
- the gate has a gate length of G 1 .
- the active area width A w is extracted and an equivalent 3-D structure is determined to occupy the equivalent area.
- the planar design would be created such that the active area 512 would have an active area width A w of 0.14 um ((2 fins*0.04 um)+((2 fins ⁇ 1)*0.06)). Accordingly, when the planar device design 510 is processed (such as by a process described above with reference to FIG. 4 ), a 3-D design 516 as illustrated in FIG. 5 is created.
- the fin width is less than the gate length, and preferably about two-thirds of the gate length, which is preferably less than about 65 nm.
- embodiments of the present invention may allow fins of varying widths. For example, it may be desirable to specify that fins in, for example, an I/O, a memory cell, or the like have one width, while fins in a core region have another width.
- FIG. 6 illustrates a similar situation in which a planar active area 610 is replaced with three 3-D structures 612 ;
- FIG. 7 illustrates another similar situation in which a planar active area 710 is replaced with four 3-D structures 712 ; and
- FIG. 8 illustrates another similar situation in which a planar active area 810 is replaced with five 3-D structures 812 .
- the planar device may have an active area size equivalent to the sum of active areas and isolation regions of the desired 3-D structure, the performance may not be equivalent.
- simulation results have illustrated that the saturation current Idsat may be improved when using a 3-D structure. Results have shown that, when the fin height is about 60 nm, the fin width is about 0.04 um, and the isolation regions between adjacent fins is about 0.06 um, the saturation current of an embodiment of the 3-D structure illustrated in FIG. 5 may be improved up to 140% over the planar device occupying an equivalent area, the saturation current of an embodiment of the 3-D structure illustrated in FIG. 6 may be improved up to 100% over the planar device occupying an equivalent area, the saturation current of an embodiment of the 3-D structure illustrated in FIG. 7 may be improved up to 80% over the planar device occupying an equivalent area, and the saturation current of an embodiment of the 3-D structure illustrated in FIG. 8 may be improved up to 65% over the planar device occupying an equivalent area.
- the core region may be designed using finFETs and the peripheral region may be designed using planar devices.
- the core region may include, for example, memory (e.g., SRAM) and devices in the high speed domain, minimum channel length domain, or digital domain
- the peripheral region may include, for example, devices in the low speed domain, non-minimum channel length domain, and analog domain.
- the region including the three-dimensional devices would be processed as discussed above, while the region design for planar devices would remain.
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Abstract
Description
EAAS=(#_Fins*Fin_Width)+((#_Fins−1)*Isolation_Width) (1)
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- wherein
- EAAS is the equivalent active area size for a planar device such that the active area for the planar device occupies an equivalent area of the sum of active areas for a desired multi-fin device;
- #_Fins is the number of desired fins in a 3-D device;
- Fin_Width is a width of each of the desired fins in the 3-D device; and
- Isolation_Width is the width of the isolation region positioned between adjacent fins in the 3-D device.
EAAS S1=(#_FinsS1*Fin_Width)+(#_FinsS1−1)*Isolation_Width) (2)
EAAS S2=(#_FinsS2*Fin_Width)+(#_FinsS2*Isolation_Width) (3)
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- wherein
- EAASS1 is the equivalent active area size for the first section of the planar device such that the active area for the first section of the planar device occupies an equivalent area of the sum of active areas for a desired multi-fin device;
- EAASS2 is the equivalent active area size for the second section of the planar device such that the active area for the second section of the planar device occupies an equivalent area of the sum of active areas for a desired multi-fin device;
- #_FinsS1 is the number of desired fins in the first section of a 3-D device;
- #_FinsS2 is the number of desired fins in the second section of a 3-D device;
- Fin_Width is a width of each of the desired fins in the 3-D device; and
- Isolation_Width is the width of the isolation region positioned between adjacent fins in the 3-D device.
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- wherein
- #_Fins is the number of fins to be placed in the 3-D device layout;
- PAS is the planar active area size;
- Isolation_Width is the width of the isolation region positioned between adjacent fins in the 3-D device; and
- Fin_Width is a width of each of the desired fins in the 3-D device.
Claims (20)
y≡(A×B)+((A−1)×C)
y≡(A×B)+((A−1)×C)
y≡(A×B)+((A−1)×C)
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US9323883B2 (en) | 2014-06-04 | 2016-04-26 | United Microelectronics Corp. | Planar design to non-planar design conversion method |
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US20080258228A1 (en) | 2008-10-23 |
US20080263492A1 (en) | 2008-10-23 |
US7898037B2 (en) | 2011-03-01 |
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