US8033884B2 - Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition - Google Patents
Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition Download PDFInfo
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- US8033884B2 US8033884B2 US12/633,674 US63367409A US8033884B2 US 8033884 B2 US8033884 B2 US 8033884B2 US 63367409 A US63367409 A US 63367409A US 8033884 B2 US8033884 B2 US 8033884B2
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- plasma
- plasmas
- hollow cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32596—Hollow cathodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
Definitions
- FIG. 8 illustrates the portion of FIG. 2 at a processing stage subsequent to that of FIG. 2 , and prior to that of FIG. 4 , in accordance with an embodiment.
- the material 18 may be an aluminum-containing material, and accordingly may comprise, consist essentially of, or consist of aluminum.
- the aluminum-containing material 18 may have a thickness of less than 100 microns, less than 50 microns, or less than 10 microns, in some embodiments.
- the anodization may be conducted with an apparatus of the type shown in FIG. 5 as apparatus 30 .
- apparatus 30 comprises a vessel 32 retaining an electrolytic solution 34 .
- Construction 10 is provided within such solution as an anode, and a cathode 36 is also provided within the solution.
- a power source 38 is utilized to provide sufficient power between the anode and the cathode to cause anodization of the aluminum-containing material associated with the anode.
- the openings will be in an approximately hexagonally closest-packed arrangement, rather than in the perfect arrangement shown in FIG. 3 .
- An approximately hexagonally closest-packed arrangement is an arrangement which is primarily hexagonally closest-packed, but which may deviate from perfect hexagonal closest-packing due to practical constraints in achieving a hexagonal closest-packed arrangement, with such constraints including, for example, practical limitations in the homogeneity of the starting aluminum-containing material in purity, crystalline orientation, etc.; and practical limitations in the homogeneity of the exposure of the aluminum-containing material to anodization conditions during the anodization process of, for example, FIG. 5 .
- Deviations from perfect hexagonal periodicity may also be caused by variations in local chemical gradients (chemical diffusion), as well as local variations in temperature due to inhomogeneous cooling, and/or local reaction rates (due to variations in anodization conditions).
- FIG. 7 One method of forcing a hexagonal closest-packed arrangement to extend across grain boundaries is described with reference to FIG. 7 .
- a plurality of divots or dents 19 are imparted to a surface of aluminum-containing material 18 prior to the anodization.
- the dents are in a pattern corresponding to the centers of hexagonally closest-packed openings desired to be formed during the anodization.
- the dents may provide starting points for the anodization occurring within material 18 , and accordingly may force a pattern of hexagonal closest-packing to extend across an entirety of the oxide formed from material 18 , including extending across grain boundaries.
- the dents may be formed by any suitable method.
- An example method is to press a template against material 18 .
- the hollow cathodes may be referred to as plasma-generating structures.
- energy may be provided to the conductive material 40 sufficient to generate plasmas within the hollow cathodes, and to maintain such plasmas for a desired duration.
- the energy may be radiofrequency (RF) energy to form inductively-coupled plasmas or capacitively-coupled plasmas.
- RF radiofrequency
- the RF coupling mechanism may be primarily one of inductive nature, and in forming capacitively-coupled plasmas the RF coupling mechanism may be primarily one of capacitive nature.
- the plasmas may be high-density plasmas.
- FIG. 12 shows an assembly 50 comprising construction 10 inverted over a substrate 51 .
- Plasmas 52 , 54 and 56 are generated and maintained within hollow cathodes 42 , 44 and 46 , respectively.
- current is passed to conductive material 40 from conductive material 14 to provide the energy that generates and maintains the plasmas.
- Current flow through material 14 is controlled by circuitry 58 that is diagrammatically illustrated in FIG. 12 .
- Such circuitry may be at least partially comprised by integrated circuitry associated with semiconductor base 12 , and in some embodiments may be wholly comprised by such integrated circuitry.
- the circuitry may have a layout of components similar to that described in J. Hopwood et. al. “ Fabrication and Characterization of a Micromachined 5 mm Inductively Coupled Plasma Generator” J. Vac. Sci. Technol. B. 18 (5), pp. 2446-2451 September/October 2000.
- assembly 120 is shown after utilization of the plasmas 123 for a plasma-assisted etch of substrate 124 .
- etch may be conducted by flowing etchant material between construction 122 and substrate 124 , providing a bias between construction 122 and substrate 124 , and utilizing one or more species generated by plasmas 123 to perform the etch.
- the etching occurs in a pattern related to the pattern of the lit and unlit plasma-generating structures. Accordingly, the pattern of lit and unlit plasma-generating structures may be utilized to impart a desired etch pattern into substrate 124 .
Abstract
Description
Claims (32)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/633,674 US8033884B2 (en) | 2007-07-13 | 2009-12-08 | Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition |
US13/231,806 US8274221B2 (en) | 2007-07-13 | 2011-09-13 | Plasma-generating structures, display devices, and methods of forming plasma-generating structures |
US13/593,280 US8674602B2 (en) | 2007-07-13 | 2012-08-23 | Plasma-generating structures and display devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/777,762 US7649316B2 (en) | 2007-07-13 | 2007-07-13 | Assemblies for plasma-enhanced treatment of substrates |
US12/633,674 US8033884B2 (en) | 2007-07-13 | 2009-12-08 | Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/777,762 Division US7649316B2 (en) | 2007-07-13 | 2007-07-13 | Assemblies for plasma-enhanced treatment of substrates |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/231,806 Division US8274221B2 (en) | 2007-07-13 | 2011-09-13 | Plasma-generating structures, display devices, and methods of forming plasma-generating structures |
Publications (2)
Publication Number | Publication Date |
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US20100102031A1 US20100102031A1 (en) | 2010-04-29 |
US8033884B2 true US8033884B2 (en) | 2011-10-11 |
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US11/777,762 Expired - Fee Related US7649316B2 (en) | 2007-07-13 | 2007-07-13 | Assemblies for plasma-enhanced treatment of substrates |
US12/633,674 Active 2027-11-17 US8033884B2 (en) | 2007-07-13 | 2009-12-08 | Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition |
US13/231,806 Expired - Fee Related US8274221B2 (en) | 2007-07-13 | 2011-09-13 | Plasma-generating structures, display devices, and methods of forming plasma-generating structures |
US13/593,280 Expired - Fee Related US8674602B2 (en) | 2007-07-13 | 2012-08-23 | Plasma-generating structures and display devices |
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US11/777,762 Expired - Fee Related US7649316B2 (en) | 2007-07-13 | 2007-07-13 | Assemblies for plasma-enhanced treatment of substrates |
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US13/231,806 Expired - Fee Related US8274221B2 (en) | 2007-07-13 | 2011-09-13 | Plasma-generating structures, display devices, and methods of forming plasma-generating structures |
US13/593,280 Expired - Fee Related US8674602B2 (en) | 2007-07-13 | 2012-08-23 | Plasma-generating structures and display devices |
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US (4) | US7649316B2 (en) |
Cited By (1)
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US9431218B2 (en) | 2013-03-15 | 2016-08-30 | Tokyo Electron Limited | Scalable and uniformity controllable diffusion plasma source |
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US20100225234A1 (en) * | 2007-09-04 | 2010-09-09 | Atomic Energy Council - Institute Of Nuclear Energy Research | Hollow-cathode plasma generator |
KR100978859B1 (en) * | 2008-07-11 | 2010-08-31 | 피에스케이 주식회사 | Apparatus for generating hollow cathode plasma and apparatus for treating a large area substrate by hollow cathode plasma |
WO2010017185A1 (en) | 2008-08-04 | 2010-02-11 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
US8828883B2 (en) | 2010-08-24 | 2014-09-09 | Micron Technology, Inc. | Methods and apparatuses for energetic neutral flux generation for processing a substrate |
EP2994556B1 (en) | 2013-04-26 | 2019-02-20 | Colorado State University Research Foundation | 12CaO-7AL2O3 ELECTRIDE HOLLOW CATHODE |
US9155184B2 (en) * | 2013-11-18 | 2015-10-06 | Applied Materials, Inc. | Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods |
US9855578B2 (en) | 2013-12-12 | 2018-01-02 | Palo Alto Research Center Incorporated | Co-extrusion print head with edge bead reduction |
CN105704902B (en) * | 2014-11-27 | 2018-02-16 | 中国科学院空间科学与应用研究中心 | A kind of combined magnetic constrains linear hollow cathode discharge device |
EA201791237A1 (en) | 2014-12-05 | 2017-11-30 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | PLASMA SOURCE WITH APPLICATION OF REDUCING EDUCATION OF MACRO PARTICLES COATING AND METHOD OF USING THE PLASMA SOURCE WITH APPLICATION OF DECREASING EDUCATION OF WATER PARTICLES COATING TO DECORATE ESC ESCAPE ELEMENTERS ESC ESCAPE PLAYERS CLEARING ELEMENTS |
CN107852805B (en) | 2014-12-05 | 2020-10-16 | Agc玻璃欧洲公司 | Hollow cathode plasma source |
CN104507250B (en) * | 2014-12-31 | 2017-03-08 | 中国科学院空间科学与应用研究中心 | A kind of generation device of plasma photon crystal |
CN104507248B (en) * | 2014-12-31 | 2017-06-13 | 中国科学院空间科学与应用研究中心 | A kind of generation device of combined type plasma sheet |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
US10964514B2 (en) * | 2017-10-17 | 2021-03-30 | Lam Research Corporation | Electrode for plasma processing chamber |
KR102455231B1 (en) | 2017-10-23 | 2022-10-18 | 삼성전자주식회사 | hallow cathode for generating pixelated plasma, manufacturing apparatus of semiconductor device and manufacturing method of the same |
KR102453450B1 (en) | 2017-10-23 | 2022-10-13 | 삼성전자주식회사 | apparatus for processing plasma, manufacturing system of semiconductor device and manufacturing method of the same |
US20220028663A1 (en) * | 2020-07-23 | 2022-01-27 | Applied Materials, Inc. | Plasma source for semiconductor processing |
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US20050051517A1 (en) | 2003-08-12 | 2005-03-10 | Oehrlein Gottlieb S. | Method and system for nanoscale plasma processing of objects |
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2007
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-
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2012
- 2012-08-23 US US13/593,280 patent/US8674602B2/en not_active Expired - Fee Related
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9431218B2 (en) | 2013-03-15 | 2016-08-30 | Tokyo Electron Limited | Scalable and uniformity controllable diffusion plasma source |
Also Published As
Publication number | Publication date |
---|---|
US20090015160A1 (en) | 2009-01-15 |
US7649316B2 (en) | 2010-01-19 |
US20120313517A1 (en) | 2012-12-13 |
US20120001539A1 (en) | 2012-01-05 |
US20100102031A1 (en) | 2010-04-29 |
US8674602B2 (en) | 2014-03-18 |
US8274221B2 (en) | 2012-09-25 |
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