US7579631B2 - Variable breakdown characteristic diode - Google Patents
Variable breakdown characteristic diode Download PDFInfo
- Publication number
- US7579631B2 US7579631B2 US11/087,000 US8700005A US7579631B2 US 7579631 B2 US7579631 B2 US 7579631B2 US 8700005 A US8700005 A US 8700005A US 7579631 B2 US7579631 B2 US 7579631B2
- Authority
- US
- United States
- Prior art keywords
- memory cell
- active layer
- breakdown voltage
- external stimuli
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
Links
- 230000015556 catabolic process Effects 0.000 title claims abstract description 56
- 230000015654 memory Effects 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000002019 doping agent Substances 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 5
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052946 acanthite Inorganic materials 0.000 claims description 4
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 4
- 229910008483 TiSe2 Inorganic materials 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 claims description 3
- 229910052955 covellite Inorganic materials 0.000 claims 2
- 150000002500 ions Chemical class 0.000 abstract description 36
- 230000006870 function Effects 0.000 abstract description 16
- 229920000642 polymer Polymers 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 4
- 230000002441 reversible effect Effects 0.000 description 21
- -1 poly(p-phenylene vinylene) Polymers 0.000 description 20
- 238000004891 communication Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 238000004377 microelectronic Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229920000620 organic polymer Polymers 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920001940 conductive polymer Polymers 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229920006254 polymer film Polymers 0.000 description 5
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- JRXXLCKWQFKACW-UHFFFAOYSA-N biphenylacetylene Chemical group C1=CC=CC=C1C#CC1=CC=CC=C1 JRXXLCKWQFKACW-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910000792 Monel Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910000856 hastalloy Inorganic materials 0.000 description 3
- 229910001026 inconel Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 3
- 230000006855 networking Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229920001795 coordination polymer Polymers 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- PRDFNJUWGIQQBW-UHFFFAOYSA-N 3,3,3-trifluoroprop-1-yne Chemical group FC(F)(F)C#C PRDFNJUWGIQQBW-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 101710158075 Bucky ball Proteins 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XEIPQVVAVOUIOP-UHFFFAOYSA-N [Au]=S Chemical compound [Au]=S XEIPQVVAVOUIOP-UHFFFAOYSA-N 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002678 macrocyclic compounds Chemical class 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000834 poly(ferrocenylene) polymer Polymers 0.000 description 1
- 229920000828 poly(metallocenes) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/11—Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/12—Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation, e.g. trapping, doping
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
Definitions
- the invention generally relates to memory devices and methods of making and using the memory devices.
- the invention relates to memory devices having variable breakdown characteristic diode(s).
- Computer and memory devices perform various functions including information processing and storage.
- the arithmetic, logic, and memory operations are performed by devices capable of reversibly switching between two states, often referred to as “0” and “1.”
- These switching devices are fabricated from semiconductor devices that perform these various functions and which are capable of switching between two states at a high speed.
- MOSFET metal oxide semiconductor field effect transistor
- Inorganic solid-state devices are generally encumbered with a complex architecture leading to high cost and a loss of data storage density.
- the circuitry of volatile semiconductor memories manufactured with inorganic semiconductor material must be constantly supplied with electric current, resulting in heating and high electric power consumption to maintain the stored information.
- Non-volatile semiconductor devices have a reduced data rate and relatively high power consumption as well as a high degree of complexity.
- the control of a semiconductor device is accomplished through the utilization of electricity.
- a voltage is placed across the device to put it in a predetermined state, thus “controlling” it.
- it may store a value represented by the state or it may turn the device ON or OFF.
- the device is a memory cell, it may be programmed to read, write or erase based on the voltage level and polarity.
- the device is an LED, application of the voltage may turn the emitter ON or OFF, reduce its brightness or increase its brightness.
- Current manufacturing techniques utilize additional external semiconductor devices for this purpose, such as transistors. These transistors are somewhat complex devices that require a multitude of fabrication steps to produce.
- the invention provides new memory devices that possess one or more of the following: small size compared to conventional memory devices, capability to store multiple bits of information, short resistance/impedance switch time, low operating voltages, low cost, high reliability, long life (thousands/millions of cycles), capable of three dimensional packing, associated low temperature (or high temperature) processing, light weight, high density/integration, and extended memory retention.
- One aspect of the invention relates to a memory device containing a first electrode and at least a second electrode.
- the controllably conductive media includes a passive layer and an active layer.
- the passive layer can include super ionic material.
- An external stimuli greater than the external stimuli required to operate the device, is applied between the first and at least second electrode causing ions in the media to move. The movement of the ions causes a change in the media, known as doping.
- the doped media functions as a variable breakdown characteristic diode with a variable doping degree.
- a method of forming a memory cell including providing a first electrode, a second electrode and a polymer film therebetween, the polymer film having a controllably conductive media.
- the controllably conductive media further includes a passive layer and an active layer. Applying a voltage between the first and second electrodes, causing the ions to move in the polymer film, wherein the applied voltage level controls the doping degree of the polymer film.
- the doped polymer functions as a variable breakdown characteristic diode.
- a memory cell having first and second electrodes with a controllably conductive media therebetween.
- the controllably conductive media having a passive layer that includes superionic material and an active layer that includes conductive material. Voltage is applied to the electrodes causing doping of the active layer, wherein the media operates as a variable breakdown characteristic diode or Zener diode, for example.
- the memory cell having the doped active layer may be utilized in, for example, a computer, a hand-held electronic device, or a memory device including an array of the memory cells.
- FIG. 1 illustrates a memory cell in accordance with an aspect of the invention.
- FIG. 2 illustrates a memory cell with a external stimuli applied.
- FIG. 3 is a graph 300 illustrating current (I) vs. voltage (V) plot of characteristics for a memory device in accordance with an aspect of the invention.
- FIG. 4 is a diagram illustrating a Zener-type diodic device in accordance with an aspect of the invention.
- FIG. 5 is a diagram illustrating a Zener-type diodic device with an applied forward bias voltage in accordance with an aspect of the invention.
- FIG. 6 is a diagram illustrating a Zener-type diodic device with an applied reverse bias voltage in accordance with an aspect of the invention.
- FIG. 7 is a diagram illustrating a Zener-type diodic device with an applied reverse bias voltage greater than the Zener breakdown voltage in accordance with an aspect of the invention.
- FIG. 8 is a flow diagram illustrating a methodology of fabricating a diodic device in accordance with an aspect of the invention.
- FIG. 9 illustrates a perspective view of a two dimensional microelectronic device containing a plurality of memory cells in accordance with one aspect of the invention.
- FIG. 10 illustrates a perspective view of a three dimensional microelectronic device containing a plurality of memory cells in accordance with another aspect of the invention.
- FIG. 11 illustrates a block diagram of a computer operable to execute the disclosed invention.
- the invention involves memory cells made of at least two electrodes with a controllably conductive media between the two electrodes.
- the controllably conductive media contains a low conductive (active) layer and a passive layer.
- the media may be organic, inorganic, or organic mixed with inorganic material(s).
- the memory cells may optionally contain additional layers, such as additional electrodes, charge retention layers, and/or chemically active layers.
- the impedance of the controllably conductive media changes when an external stimuli such as an electric field is applied.
- a plurality of the memory cells which may be referred to as an array, form, with other components, a memory device.
- memory cells may form new memory devices and function in a manner analogous to metal oxide semiconductor field effect transistors (MOSFETs) in conventional semiconductor memory devices.
- MOSFETs metal oxide semiconductor field effect transistors
- the invention provides a semiconductor device that allows control of its memory cell via a diodic layer. This is accomplished by forming the device and doping and de-doping a polymer film of the device, resulting in a diodic layer with a controllable back and forth motion of ions to provide memory characteristics.
- the diodic layer functions electrically as a diode to control the amount of current flowing through the cell when a voltage is applied across the memory cell.
- This layer may have characteristics similar to a Zener-type diode, for example.
- a breakdown voltage level can be inherently predetermined by the composition of the diode. This breakdown voltage value is chosen to allow a specific operational function to result in the device. This function may include such things as reading, writing or erasing a semiconductor cell such as a memory cell.
- the memory cell 100 has a first electrode or active layer electrode 110 and a second electrode or passive layer electrode 120 with a controllably conductive media 130 therebetween.
- the controllably conductive media 110 contains a low conductive layer 140 and passive layer 150 . Peripheral circuitry and devices are not shown for brevity.
- the memory cell 100 contains at least two electrodes, as one or more electrodes may be disposed between the two electrodes that sandwich the controllably conductive media 130 .
- the thickness of each electrode is independently about 0.01 ⁇ m or more and about 10 ⁇ m or less.
- the electrodes 110 , 120 are made of conductive material, such as conductive metal, conductive metal alloys, conductive metal oxides, conductive polymer films, semiconductive materials, and the like.
- Examples of electrodes include one or more of aluminum, chromium, copper, germanium, gold, magnesium, manganese, indium, iron, nickel, palladium, platinum, silver, titanium, zinc, and alloys thereof; indium-tin oxide (ITO); polysilicon; doped amorphous silicon; metal silicides; and the like. Alloy electrodes include Hastelloy®, Kovar®, Invar, Monel®, Inconel®, brass, stainless steel, magnesium-silver alloy, and various other alloys.
- the controllably conductive media disposed between the two electrodes, can be rendered conductive, semiconductive, or nonconductive in a controllable manner using an external stimuli.
- the controllably conductive media is nonconductive or has a high impedance.
- multiple degrees of conductivity/resistivity may be established for the controllably conductive media in a controllable manner.
- the multiple degrees of conductivity/resistivity for the controllably conductive media may include a nonconductive state, a highly conductive state, and a semiconductive state.
- the controllably conductive media can be rendered conductive, non-conductive or any state therebetween (degree of conductivity) in a controllable manner by an external stimulus (external meaning originating from outside the controllably conductive media). For example, under an external electric field, radiation, and the like, a given nonconductive controllably conductive media is converted to a conductive controllably conductive media.
- the controllably conductive media contains one or more low conductive layers and one or more passive layers.
- the low conductive layer can be formed from various materials including organic semiconductor materials, inorganic semiconductor materials and mixtures of organic and inorganic semiconductor materials.
- the low conductive or active layer has a thickness of about 0.001 ⁇ m or more and about 5 ⁇ m or less.
- the organic semiconductor layer contains at least one of an organic polymer (such as a conjugated organic polymer), an organometallic compound (such as a conjugated organometallic compound), an organometallic polymer (such as a conjugated organometallic polymer), a buckyball, a carbon nanotube (such as a C6-C60 carbon nanotubes), and the like.
- the organic polymers (or the organic monomers constituting the organic polymers) may be cyclic or acyclic. During formation or deposition, the organic polymer self assembles between the electrodes.
- conjugated organic polymers include one or more of polyacetylene; polyphenylacetylene; polydiphenylacetylene; polyaniline; poly(p-phenylene vinylene); polythiophene; polyporphyrins; porphyrinic macrocycles, thiol derivatized polyporphyrins; polymetallocenes such as polyferrocenes, polyphthalocyanines; polyvinylenes; polystiroles; poly(t-butyl)diphenylacetylene; poly(trifluoromethyl)diphenylacetylene; polybis(trifluoromethyl)acetylene; polybis(t-butyldiphenyl)acetylene; poly(trimethylsilyl)diphenylacetylene; poly(carbazole)diphenylacetylene; polydiacetylene; polypyridineacetylene; polymethoxyphenylacetylene; polymethylphenylacetylene; poly(t-
- Inorganic materials include transition metal sulfides, chalcogenides, and transition metal oxides. Examples include copper oxide (CuO, Cu 2 O), iron oxide (FeO, Fe 3 O 4 ), manganese oxide (MnO 2 , Mn 2 O 3 , etc), titanium oxide (TiO 2 ).
- the active low conductive layer can be a mixture of organic and inorganic materials.
- the inorganic material (transition metal oxide/sulfide) is usually embedded in an organic semiconductor material. Examples include polyphenylacetylene mixed with Cu 2 S, polyphenylacetylene mixed with Cu 2 O, and the like.
- the passive layer contains at least one conductivity facilitating compound that contributes to the controllably conductive properties of the controllably conductive media.
- the conductivity facilitating compound has the ability to donate and accept charges (holes and/or electrons).
- the passive layer thus may transport between an electrode and the low conductive layer/passive layer interface, facilitate charge/carrier injection into the low conductive layer, and/or increase the concentration of a charge carrier in the low conductive layer.
- the super ionic layer is a source of dopant ions that provide a controllable back and forth motion of ions, depending on the status of an applied external stimuli, to produce a memory characteristic.
- the dopant ions move from a passive layer (super ionic) to an active layer (conductive polymer/material) to dope the active layer and change its electrical properties.
- the dopant ions can move from the active layer (conductive polymer/material) back to the passive layer (super ionic) thereby de-doping and restoring the active layer to its original electrical properties.
- the nature or electrical properties of the super ionic layer is unaffected by the movement of dopant ions.
- Examples of conductivity facilitating compounds that may make up the passive layer include one or more of copper sulfide (Cu x S, where x is from about 0.5 to about 5), silver sulfide (Ag 2 S, AgS), gold sulfide (Au 2 S, AuS), and the like.
- Cu x S copper sulfide
- AgS silver sulfide
- Au 2 S gold sulfide
- Other examples for the passive/super ionic layer CuS, CuO, Cu 2 O, Cu 2 Se, Ag 2 Se, TiSe 2 , and the like.
- the super ionic material facilitates the supply and acceptance of ions.
- the passive layer containing the conductivity facilitating compound has a thickness of 2 ⁇ or more and about 0.1 ⁇ m or less.
- a memory cell 200 with a first electrode 110 and a second electrode 120 .
- a controllably conductive media 130 including a low conductive layer 140 and a passive layer 150 .
- the electrical properties of the media must be altered. This altering of the electrical properties is commonly referred to as doping, and consists of introducing an element, known as a dopant for purposes of altering electrical properties.
- the altering of the electrical properties according to the invention is also a result of de-doping, removing or reducing the amount of dopant that was introduced in the element.
- Doping of the memory cell 200 occurs when an external stimuli, such as an electrical signal, is applied to the first electrode 110 and the second electrode 120 .
- the external stimuli may be provided via any of various known methods and such as via external contact wires 210 , 220 .
- the external stimuli applied with a first polarity across a first electrode 110 and a second electrode 120 causes ions to move from the passive layer, or super ionic layer 150 to the low-conductive (active) layer 140 , resulting in programming.
- the external stimuli applied via the first electrode 110 and second electrode 120 to dope the media 130 is a larger stimuli than that used to operate the memory cell.
- As the ions move and dope the active layer 140 the electrical properties of the active layer 140 change and the device exhibits the working characteristics of a Zener diode, for example. The electrical characteristics of such a device depends on the doping degree.
- An external stimuli of a second or opposite polarity is applied to de-dope or remove the dopant from the active layer 140 . Thereby changing the electrical properties of the active layer 140 , resulting in erasing the memory cell. It should be noted that the electrical properties of the passive or superionic layer do not change during operation of the device.
- the external stimuli applied is dependent upon the chosen material/materials-interface of the memory cell. Each material/material-interface has a working voltage range recommended by its electrical properties. The external stimuli operates to change the reverse breakdown voltage of the memory cell.
- the polarity of the external stimuli with regard to the first and at least second electrode is dependant upon the polarity of the dopant ions within the passive layer 150 .
- Positive dopant ions such as Cu+, Li+, Na+, etc, require the application of positive bias to the passive layer 150 with respect to the active layer. In this way the applied stimuli acts to push, force or cause movement of the positively charged ions into the active layer 140 .
- Negatively charged dopant ions, such as I ⁇ (iodine) would act in exactly the opposite way.
- the application of positive bias to the active layer 140 with respect to the passive layer 150 via an external stimuli would cause the ions to move into the active layer 140 .
- the ions move from the passive or super ionic layer 150 to the active layer 140 and in other situations, the ions move from the active layer 140 toward the passive or super ionic layer 150 .
- the super ionic layer 150 is the primary source of dopant ions and the controllable back and forth motion of the ions provide the memory characteristic of the memory cell 200 .
- the ions dope and change the electronic properties (e.g. the diode reverse breakdown voltage) of the active layer 140 . This change results in a programming state of the memory cell.
- a diode is essentially a two-region device separated by a junction. It either allows current to pass or prohibits current to pass. Whether the current is allowed to pass, is determined by the voltage level and polarity, referred to as biasing. Generally, when the polarity of the applied voltage matches the polarity of the diode region at the junction, the diode is considered to be forward biased, permitting the current to flow. When the polarities are opposing, the diode is considered to be reverse biased, inhibiting the current flow. Current flow in a reverse biased diode can be achieved by raising the applied voltage to a level that forces the junction into breakdown.
- I D I S ⁇ ( e qV D nKT - 1 )
- I D the current through the diode and V D is the voltage across the diode.
- I S is the reverse saturation current (the current that flows through the diode when it is reverse biased ⁇ V D is negative)
- q the electronic charge (1.602 ⁇ 10 ⁇ 19 C)
- k is Boltzmann's constant (1.38 ⁇ 10 ⁇ 23 J/° K)
- T junction temperature in Kelvins
- n is the emission coefficient.
- Zener diodes are designed to pass a current in the reverse direction when the voltage across it reaches a certain (negative) value, called the Zener voltage (V Z ).
- V Z the Zener voltage
- the Zener diode behaves like a normal diode.
- V D ⁇ V Z
- the diode allows current to flow in the breakdown condition and keeps the voltage V D nearly constant at the value ⁇ V Z . In this way, the Zener diode can act as a voltage regulator.
- FIG. 3 illustrated is a graph 300 of a current (I) vs. voltage (V) relationship of a memory cell according to an aspect of the invention.
- the current-voltage relationship is depicted as lines 310 and 315 .
- the graph 300 displays a horizontal axis 320 representing voltage (V) and a vertical axis 330 representing current (I).
- the portion of the horizontal axis 320 to the right of the vertical axis 330 represents positive voltage and the portion of the horizontal axis 320 to the left of the vertical axis 330 represents negative voltage.
- the portion of the vertical axis 330 above the horizontal axis 320 represents positive current and the portion of the vertical axis 330 below the horizontal axis 320 represents negative current.
- FIG. 3 shows two memory states represented by the current-voltage plot.
- Line 310 corresponds to the “ON” state (referred to as “1”) of the memory cell and line 315 corresponds to the “OFF” state (referred to as “0”) of the memory cell.
- Each state, “OFF” and “ON”, has a corresponding reverse-breakdown voltage, V BR .
- the breakdown voltage of the “ON” state (V BRon ) is shown as the portion of line 310 at 350 .
- the breakdown voltage of the “OFF” state (V BRoff ) is shown as the portion of line 315 at 355 .
- the V BR is dependent on the doping level or doping degree (N D ) of the active layer.
- N D doping degree
- the passive layer is the supplier of the dopant ions and is generally strongly P+. The passive layer's P+ nature is unaffected by the movement of dopant ions from it to the active layer.
- an external stimuli such as a program voltage, V P
- V P a program voltage
- the doping of the active layer causes the reverse-breakdown voltage to be changed from V BRoff 355 to V BRon 350 .
- a bias in the negative direction, slightly above V BRon 350 is applied.
- the breakdown can be either avalanche breakdown or tunneling breakdown.
- an external stimuli is applied in the negative direction to move ions from the active layer into the passive layer. This movement of ions out of the active layer is referred to as de-doping. If the applied stimuli or bias is higher than V BRon 350 , it would result in breakdown current to flow and thus impede ion-motion, thus the applied stimuli, to result in an erase state, must not be higher than V BRon 350 . As de-doping occurs, the reverse-breakdown voltage moves towards V Broff 355 , and the erase voltage V er can follow as a traveling voltage, shown in the direction of Arrows A and B.
- the traveling erase voltage V er will move from V er1 toward V er2 , Arrow A, providing a relatively fast erase as opposed to simply applying a low initial erase voltage and waiting for complete erasure.
- V BR moves from V BRon to V BRoff , as shown by Arrow B, the active layer is de-doped, resulting in erasure of the memory cell.
- the memory cell has different branches of current-voltage exhibiting characteristics of a Zener diode, for example, with a variable doping degree. Exemplary depiction of the different branches are shown as the dotted lines between voltage break down lines 350 and 355 .
- the read current limit or range, shown by line 390 is from about a zero current level to a negative current level.
- a current limited read signal may be used instead of a voltage limited read signal.
- FIG. 4 a diagram illustrating a Zener-type diodic semiconductor device 400 in accordance with an aspect of the invention is shown.
- the semiconductor device 400 is modeled as a Zener diode 410 and a resistor 420 .
- the Zener diode 410 is representative of the diodic layer of the invention.
- the resistor 420 is representative of a memory cell.
- the Zener diode 410 operates as a normal diode unless a specific predetermined reverse bias voltage is applied to cause a breakdown. Thus, during normal operation current will flow through the resistor (memory cell) 420 . This allows the application of various voltages to program and read various states of the memory cell 420 . For instance, erasure of the memory cell 420 can be accomplished by utilizing the unique nature of a Zener diode to breakdown when a predetermined reverse bias voltage is applied. This is discussed infra.
- a Zener-type diodic semiconductor device 500 with an applied forward bias voltage in accordance with an aspect of the invention.
- the semiconductor device 500 has a forward voltage applied across the device 500 by a voltage source 530 .
- the forward voltage is greater than the switch-on voltage level of a Zener-type diodic layer 510 .
- current 540 is allowed to flow through the memory cell 520 .
- the actual current value is dependent upon the value of the applied voltage from the voltage source 530 . In this manner, the memory cell 520 can be programmed and/or read.
- FIG. 6 illustrates a Zener-type diodic semiconductor device 600 with an applied reverse bias voltage in accordance with an aspect of the invention.
- the semiconductor device 600 has a reverse bias voltage applied across it by a voltage source 630 .
- the voltage level is less than the breakdown voltage level of the Zener-type diodic layer represented as a Zener diode 610 .
- the leakage current of the Zener diode 610 is very small and, thus, the current flow 640 through the memory cell 620 is also small. Because the Zener diode cannot flow a significant amount of current until a certain reverse bias voltage threshold is reached (breakdown voltage), it prevents inadvertent low level reverse bias voltages from erasing the memory cell 620 . Thus, it is desirable to dope the polymer to a sufficient degree so the diodic layer media posses low leakage current characteristics.
- FIG. 7 a diagram illustrating a Zener-type diodic semiconductor device 700 with an applied reverse bias voltage greater than the Zener breakdown voltage in accordance with an aspect of the invention is shown.
- the semiconductor device 700 has a reverse bias voltage greater than the Zener breakdown voltage applied across it by a voltage source 730 .
- the semiconductor cell 720 working in conjunction with the diodic layer 710 will have some potential drop across it.
- the voltage across the semiconductor device 700 will generally need to be greater than the breakdown voltage associated with the diodic layer 710 to account for the potential drop of the semiconductor cell 720 .
- the semiconductor cell 720 requires a certain voltage level to perform its operation, the voltage drop across the Zener diode must be taken into account also.
- a current flow 740 through the memory cell 720 is maximized. This current flow 740 is sufficient to provide an operational function, such as erasing and/or programming the memory cell 720 .
- a first electrode is formed on a substrate at 810 .
- the first electrode includes a conductive material such as aluminum, chromium, copper, germanium, gold, magnesium, manganese, indium, iron, nickel, palladium, platinum, silver, titanium, zinc, alloys thereof, indium-tin oxide, polysilicon, doped amorphous silicon, metal suicides, and the like.
- Exemplary alloys that can be utilized for the conductive material include Hastelloy®, Kovar®, Invar, Monel®, Inconel®, brass, stainless steel, magnesium-silver alloy, and various other alloys.
- the thickness of the first electrode can vary depending on the implementation and the memory device being constructed. Typically, the thickness of each electrode is independently about 0.01 ⁇ m or more and about 10 ⁇ m or less.
- the controllably conductive media contains one or more low conductive layers and one or more passive layers.
- the low conductive layer can be formed from various materials including organic semiconductor materials, inorganic semiconductor materials and mixtures of organic and inorganic semiconductor materials.
- the low conductive or active layer has a thickness of about 0.001 ⁇ m or more and about 5 ⁇ m or less.
- the passive layer contains at least one conductivity facilitating compound that contributes to the controllably conductive properties of the controllably conductive media.
- the conductivity facilitating compound has the ability to donate and accept charges (holes and/or electrons).
- the passive layer thus may transport between an electrode and the low conductive layer/passive layer interface, facilitate charge/carrier injection into the low conductive layer, and/or increase the concentration of a charge carrier in the low conductive layer.
- the passive layer containing the conductivity facilitating compound has a thickness of 2 ⁇ or more and about 0.1 ⁇ m or less.
- a second electrode is then formed over the controllably conductive media layer at 830 .
- an external stimuli is applied between the first electrode and the second electrode at 840 .
- the external stimuli may be an external electric field, radiation, and the like.
- An external stimuli applied in a first or positive direction causes ions to move from the passive layer into the active layer, doping the active layer and changing the reverse breakdown voltage of the active layer from a first breakdown voltage to a second breakdown voltage. This change in the electrical characteristics and the voltage breakdown allows programming of the memory cell.
- the memory cell is read by applying a second external stimuli in a reverse or negative direction.
- the magnitude of the external stimuli is applied in a negative direction slightly above the programming voltage breakdown level of the active layer.
- the memory cell is erased by applying a bias or external stimuli in a negative direction to move ions from the active layer back into the passive layer, or de-doping the active layer.
- the reverse breakdown voltage moves from a second breakdown voltage to a first breakdown voltage allowing the erase voltage of the memory cell to follow as a traveling voltage. This allows a relatively fast erase instead of simply applying low initial erase voltage and waiting for complete erasure.
- the microelectronic memory device 900 contains a desired number of memory cells, as determined by the number of rows, columns, and layers (three dimensional orientation described later) present.
- the first electrodes 906 and the second electrodes 908 are shown in substantially perpendicular orientation, although other orientations are possible to achieve the structure of the exploded view 902 .
- Each memory cell 904 contains a first electrode 906 and a second electrode 908 with a controllably conductive media 910 therebetween.
- the controllably conductive media 910 contains a low conductive layer 912 and passive layer 914 . Peripheral circuitry and devices are not shown for brevity.
- the memory cells contain at least two electrodes, as one or more electrodes may be disposed between the two electrodes that sandwich the controllably conductive media.
- the electrodes are made of conductive material, such as conductive metal, conductive metal alloys, conductive metal oxides, conductive polymer films, semiconductive materials, and the like.
- Electrodes include one or more of aluminum, chromium, copper, germanium, gold, magnesium, manganese, indium, iron, nickel, palladium, platinum, silver, titanium, zinc, and alloys thereof; indium-tin oxide (ITO); polysilicon; doped amorphous silicon; metal silicides; and the like. Alloy electrodes specifically include Hastelloy®, Kovar®, Invar, Monel®, Inconel®, brass, stainless steel, magnesium-silver alloy, and various other alloys.
- the controllably conductive media disposed between the two electrodes, can be rendered conductive, semiconductive, or nonconductive in a controllable manner using an external stimuli.
- the controllably conductive media is nonconductive or has a high impedance.
- multiple degrees of conductivity/resistivity may be established for the controllably conductive media in a controllable manner.
- the multiple degrees of conductivity/resistivity for the controllably conductive media may include a nonconductive state, a highly conductive state, and a semiconductive state.
- the memory devices described herein can be employed to form logic devices such as central processing units (CPUs); volatile memory devices such as DRAM devices, SRAM devices, and the like; input/output devices (I/O chips); and non-volatile memory devices such as EEPROMs, EPROMs, PROMs, and the like.
- the memory devices may be fabricated in planar orientation (two dimensional) or three dimensional orientation containing at least two planar arrays of the memory cells.
- the three dimensional microelectronic memory device 1000 contains a plurality of first electrodes 1002 , a plurality of second electrodes 1004 , and a plurality of memory cell layers 1006 . Between the respective first and second electrodes are the controllably conductive media (not shown). The plurality of first electrodes 1002 and the plurality of second electrodes 1004 are shown in substantially perpendicular orientation, although other orientations are possible.
- the three dimensional microelectronic memory device is capable of containing an extremely high number of memory cells thereby improving device density. Peripheral circuitry and devices are not shown for brevity.
- the memory cells/devices are useful in any device requiring memory.
- the memory devices are useful in computers, appliances, industrial equipment, hand-held devices, telecommunications equipment, medical equipment, research and development equipment, transportation vehicles, radar/satellite devices, and the like.
- Hand-held devices, and particularly hand-held electronic devices achieve improvements in portability due to the small size and light weight of the memory devices. Examples of hand-held devices include cell phones and other two way communication devices, personal data assistants, palm pilots, pagers, notebook computers, remote controls, recorders (video and audio), radios, small televisions and web viewers, cameras, and the like.
- program modules include routines, programs, components, data structures, etc., that perform particular tasks or implement particular abstract data types.
- inventive methods may be practiced with other computer system configurations, including single-processor or multiprocessor computer systems, minicomputers, mainframe computers, as well as personal computers, hand-held computing devices, microprocessor-based or programmable consumer electronics, and the like, each of which may be operatively coupled to one or more associated devices.
- the illustrated aspects of the invention may also be practiced in distributed computing environments where certain tasks are performed by remote processing devices that are linked through a communications network.
- program modules may be located in both local and remote memory storage devices.
- a computer typically includes a variety of computer-readable media.
- Computer-readable media can be any available media that can be accessed by the computer and includes both volatile and nonvolatile media, removable and non-removable media.
- Computer readable media can comprise computer storage media and communication media.
- Computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data.
- Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital video disk (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by the computer.
- Communication media typically embodies computer-readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism, and includes any information delivery media.
- modulated data signal means a signal that has one or more of its characteristics set or changed in such a manner as to encode information in the signal.
- communication media includes wired media such as a wired network or direct-wired connection, and wireless media such as acoustic, RF, infrared and other wireless media. Combinations of any of the above should also be included within the scope of computer-readable media.
- FIG. 11 there is illustrated an exemplary environment 1100 for implementing various aspects of the invention that includes a computer 1102 , the computer 1102 including a processing unit 1104 , a system memory 1106 and a system bus 1108 .
- the system bus 1108 couples system components including, but not limited to, the system memory 1106 to the processing unit 1104 .
- the processing unit 1104 may be any of various commercially available processors. Dual microprocessors and other multi-processor architectures may also be employed as the processing unit 1104 .
- the system bus 1108 can be any of several types of bus structure that may further interconnect to a memory bus (with or without a memory controller), a peripheral bus, and a local bus using any of a variety of commercially available bus architectures.
- the system memory 1106 includes read only memory (ROM) 1110 and random access memory (RAM) 1112 .
- ROM read only memory
- RAM random access memory
- a basic input/output system (BIOS) is stored in a non-volatile memory 1110 such as ROM, EPROM, EEPROM, which BIOS contains the basic routines that help to transfer information between elements within the computer 1102 , such as during start-up.
- the RAM 1112 can also include a high-speed RAM such as static RAM for caching data.
- the computer 1102 further includes an internal hard disk drive (HDD) 1114 (e.g., EIDE, SATA), which internal hard disk drive 1114 may also be configured for external use in a suitable chassis (not shown), a magnetic floppy disk drive (FDD) 1116 , (e.g., to read from or write to a removable diskette 1118 ) and an optical disk drive 1120 , (e.g., reading a CD-ROM disk 1122 or, to read from or write to other high capacity optical media such as the DVD).
- the hard disk drive 1114 , magnetic disk drive 1116 and optical disk drive 1120 can be connected to the system bus 1108 by a hard disk drive interface 1124 , a magnetic disk drive interface 1126 and an optical drive interface 1128 , respectively.
- the interface 1124 for external drive implementations includes at least one or both of Universal Serial Bus (USB) and IEEE 1394 interface technologies.
- the drives and their associated computer-readable media provide nonvolatile storage of data, data structures, computer-executable instructions, and so forth.
- the drives and media accommodate the storage of any data in a suitable digital format.
- computer-readable media refers to a HDD, a removable magnetic diskette, and a removable optical media such as a CD or DVD, it should be appreciated by those skilled in the art that other types of media which are readable by a computer, such as zip drives, magnetic cassettes, flash memory cards, cartridges, and the like, may also be used in the exemplary operating environment, and further, that any such media may contain computer-executable instructions for performing the methods of the invention.
- a number of program modules can be stored in the drives and RAM 1112 , including an operating system 1130 , one or more application programs 1132 , other program modules 1134 and program data 1136 . All or portions of the operating system, applications, modules, and/or data can also be cached in the RAM 1112 .
- a user can enter commands and information into the computer 1102 through one or more wired/wireless input devices, e.g., a keyboard 1138 and a pointing device, such as a mouse 1140 .
- Other input devices may include a microphone, an IR remote control, a joystick, a game pad, a stylus pen, touch screen, or the like.
- These and other input devices are often connected to the processing unit 1104 through an input device interface 1142 that is coupled to the system bus 1108 , but may be connected by other interfaces, such as a parallel port, an IEEE 1394 serial port, a game port, a USB port, an IR interface, etc.
- a monitor 1144 or other type of display device is also connected to the system bus 1108 via an interface, such as a video adapter 1146 .
- a computer typically includes other peripheral output devices (not shown), such as speakers, printers etc.
- the computer 1102 may operate in a networked environment using logical connections via wired and/or wireless communications to one or more remote computers, such as a remote computer(s) 1148 .
- the remote computer(s) 1148 may be a workstation, a server computer, a router, a personal computer, portable computer, microprocessor-based entertainment appliance, a peer device or other common network node, and typically includes many or all of the elements described relative to the computer 1102 , although, for purposes of brevity, only a memory storage device 1150 is illustrated.
- the logical connections depicted include wired/wireless connectivity to a local area network (LAN) 1152 and/or larger networks, e.g., a wide area network (WAN) 1154 .
- LAN and WAN networking environments are commonplace in offices, and companies, and facilitate enterprise-wide computer networks, such as intranets, all of which may connect to a global communication network, e.g., the Internet.
- the computer 1102 When used in a LAN networking environment, the computer 1102 is connected to the local network 1152 through a wired and/or wireless communication network interface or adapter 1156 .
- the adaptor 1156 may facilitate wired or wireless communication to the LAN 1152 , which may also include a wireless access point disposed thereon for communicating with the wireless adaptor 1156 .
- the computer 1102 can include a modem 1158 , or is connected to a communications server on the LAN, or has other means for establishing communications over the WAN 1154 , such as by way of the Internet.
- the modem 1158 which may be internal or external and a wired or wireless device, is connected to the system bus 1108 via the serial port interface 1142 .
- program modules depicted relative to the computer 1102 may be stored in the remote memory/storage device 1150 . It will be appreciated that the network connections shown are exemplary and other means of establishing a communications link between the computers may be used.
- the computer 1102 is operable to communicate with any wireless devices or entities operably disposed in wireless communication, e.g., a printer, scanner, desktop and/or portable computer, portable data assistant, communications satellite, any piece of equipment or location associated with a wirelessly detectable tag (e.g., a kiosk, news stand, restroom), and telephone.
- any wireless devices or entities operably disposed in wireless communication e.g., a printer, scanner, desktop and/or portable computer, portable data assistant, communications satellite, any piece of equipment or location associated with a wirelessly detectable tag (e.g., a kiosk, news stand, restroom), and telephone.
- the communication may be a predefined structure as with conventional network or simply an ad hoc communication between at least two devices.
- Wi-Fi Wireless Fidelity
- Wi-Fi is a wireless technology like a cell phone that enables such devices, e.g., computers, to send and receive data indoors and out; anywhere within the range of a base station.
- Wi-Fi networks use radio technologies called IEEE 802.11 (a, b, g, etc.) to provide secure, reliable, fast wireless connectivity.
- IEEE 802.11 a, b, g, etc.
- a Wi-Fi network can be used to connect computers to each other, to the Internet, and to wired networks (which use IEEE 802.3 or Ethernet).
- Wi-Fi networks operate in the unlicensed 2.4 and 5 GHz radio bands, with an 11 Mbps (802.11b) or 54 Mbps (802.11a) data rate or with products that contain both bands (dual band), so the networks can provide real-world performance similar to the basic 10BaseT wired Ethernet networks used in many offices.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
where ID is the current through the diode and VD is the voltage across the diode. Additionally, IS is the reverse saturation current (the current that flows through the diode when it is reverse biased −VD is negative), q is the electronic charge (1.602×10−19C), k is Boltzmann's constant (1.38×10−23J/° K), T=junction temperature in Kelvins, and n is the emission coefficient.
VBR≈1/ND
where VBR is the breakdown voltage and ND is the doping degree. The value or degree of ND is reversibly changed by the doping and the de-doping of the active layer, with the dopant ions. The passive layer is the supplier of the dopant ions and is generally strongly P+. The passive layer's P+ nature is unaffected by the movement of dopant ions from it to the active layer.
Claims (23)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/087,000 US7579631B2 (en) | 2005-03-22 | 2005-03-22 | Variable breakdown characteristic diode |
TW095109799A TWI355089B (en) | 2005-03-22 | 2006-03-22 | Variable breakdown characteristic diode |
PCT/US2006/010365 WO2006102392A1 (en) | 2005-03-22 | 2006-03-22 | Variable breakdown characteristic diode |
JP2008503123A JP5085530B2 (en) | 2005-03-22 | 2006-03-22 | Variable breakdown characteristic diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/087,000 US7579631B2 (en) | 2005-03-22 | 2005-03-22 | Variable breakdown characteristic diode |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060214183A1 US20060214183A1 (en) | 2006-09-28 |
US7579631B2 true US7579631B2 (en) | 2009-08-25 |
Family
ID=36603415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/087,000 Active 2026-08-25 US7579631B2 (en) | 2005-03-22 | 2005-03-22 | Variable breakdown characteristic diode |
Country Status (4)
Country | Link |
---|---|
US (1) | US7579631B2 (en) |
JP (1) | JP5085530B2 (en) |
TW (1) | TWI355089B (en) |
WO (1) | WO2006102392A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8941089B2 (en) | 2012-02-22 | 2015-01-27 | Adesto Technologies Corporation | Resistive switching devices and methods of formation thereof |
US9306182B2 (en) | 2009-03-20 | 2016-04-05 | Novaled Ag | Organic zener diode, electronic circuit, and method for operating an organic zener diode |
US20160111505A1 (en) * | 2012-09-30 | 2016-04-21 | Sensor Electronic Technology, Inc. | Semiconductor Device with Breakdown Preventing Layer |
US9373786B1 (en) | 2013-01-23 | 2016-06-21 | Adesto Technologies Corporation | Two terminal resistive access devices and methods of formation thereof |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7830015B2 (en) * | 2005-03-25 | 2010-11-09 | Spansion Llc | Memory device with improved data retention |
US20080149159A1 (en) * | 2006-12-20 | 2008-06-26 | Mark Logan | Thermoenergy devices and methods for manufacturing same |
US8878235B2 (en) | 2007-12-31 | 2014-11-04 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
US8236623B2 (en) | 2007-12-31 | 2012-08-07 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
US8558220B2 (en) * | 2007-12-31 | 2013-10-15 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
US8035099B2 (en) | 2008-02-27 | 2011-10-11 | Spansion Llc | Diode and resistive memory device structures |
US8304284B2 (en) * | 2008-04-11 | 2012-11-06 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same |
US8530318B2 (en) * | 2008-04-11 | 2013-09-10 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
JP6619130B2 (en) * | 2014-07-01 | 2019-12-11 | 公立大学法人首都大学東京 | Semiconductor element manufacturing method, semiconductor element, and thermoelectric conversion element using the semiconductor element |
US20170271410A1 (en) * | 2015-02-11 | 2017-09-21 | Hewlett Packard Enterprise Development Lp | Nonvolatile memory crossbar array |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5818749A (en) * | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
US6656763B1 (en) | 2003-03-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Spin on polymers for organic memory devices |
US6686263B1 (en) | 2002-12-09 | 2004-02-03 | Advanced Micro Devices, Inc. | Selective formation of top memory electrode by electroless formation of conductive materials |
US20040026714A1 (en) * | 2001-08-13 | 2004-02-12 | Krieger Juri H. | Memory device with active passive layers |
US6746971B1 (en) | 2002-12-05 | 2004-06-08 | Advanced Micro Devices, Inc. | Method of forming copper sulfide for memory cell |
US6753247B1 (en) | 2002-10-31 | 2004-06-22 | Advanced Micro Devices, Inc. | Method(s) facilitating formation of memory cell(s) and patterned conductive |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
US6770905B1 (en) | 2002-12-05 | 2004-08-03 | Advanced Micro Devices, Inc. | Implantation for the formation of CuX layer in an organic memory device |
US6773954B1 (en) | 2002-12-05 | 2004-08-10 | Advanced Micro Devices, Inc. | Methods of forming passive layers in organic memory cells |
US6781868B2 (en) | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
US6787458B1 (en) | 2003-07-07 | 2004-09-07 | Advanced Micro Devices, Inc. | Polymer memory device formed in via opening |
US6803267B1 (en) | 2003-07-07 | 2004-10-12 | Advanced Micro Devices, Inc. | Silicon containing material for patterning polymeric memory element |
US6825060B1 (en) | 2003-04-02 | 2004-11-30 | Advanced Micro Devices, Inc. | Photosensitive polymeric memory elements |
US6847047B2 (en) * | 2002-11-04 | 2005-01-25 | Advanced Micro Devices, Inc. | Methods that facilitate control of memory arrays utilizing zener diode-like devices |
US6852586B1 (en) | 2003-10-01 | 2005-02-08 | Advanced Micro Devices, Inc. | Self assembly of conducting polymer for formation of polymer memory cell |
US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US6864522B2 (en) | 2001-08-13 | 2005-03-08 | Advanced Micro Devices, Inc. | Memory device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02155263A (en) * | 1988-12-07 | 1990-06-14 | Nec Corp | Semiconductor optical memory |
US6753954B2 (en) * | 2000-12-06 | 2004-06-22 | Asml Masktools B.V. | Method and apparatus for detecting aberrations in a projection lens utilized for projection optics |
US6977389B2 (en) * | 2003-06-02 | 2005-12-20 | Advanced Micro Devices, Inc. | Planar polymer memory device |
US7259039B2 (en) * | 2003-07-09 | 2007-08-21 | Spansion Llc | Memory device and methods of using and making the device |
-
2005
- 2005-03-22 US US11/087,000 patent/US7579631B2/en active Active
-
2006
- 2006-03-22 WO PCT/US2006/010365 patent/WO2006102392A1/en active Application Filing
- 2006-03-22 JP JP2008503123A patent/JP5085530B2/en not_active Expired - Fee Related
- 2006-03-22 TW TW095109799A patent/TWI355089B/en not_active IP Right Cessation
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5818749A (en) * | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
US6781868B2 (en) | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
US6864522B2 (en) | 2001-08-13 | 2005-03-08 | Advanced Micro Devices, Inc. | Memory device |
US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US20040026714A1 (en) * | 2001-08-13 | 2004-02-12 | Krieger Juri H. | Memory device with active passive layers |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
US6753247B1 (en) | 2002-10-31 | 2004-06-22 | Advanced Micro Devices, Inc. | Method(s) facilitating formation of memory cell(s) and patterned conductive |
US6847047B2 (en) * | 2002-11-04 | 2005-01-25 | Advanced Micro Devices, Inc. | Methods that facilitate control of memory arrays utilizing zener diode-like devices |
US6773954B1 (en) | 2002-12-05 | 2004-08-10 | Advanced Micro Devices, Inc. | Methods of forming passive layers in organic memory cells |
US6770905B1 (en) | 2002-12-05 | 2004-08-03 | Advanced Micro Devices, Inc. | Implantation for the formation of CuX layer in an organic memory device |
US6746971B1 (en) | 2002-12-05 | 2004-06-08 | Advanced Micro Devices, Inc. | Method of forming copper sulfide for memory cell |
US6686263B1 (en) | 2002-12-09 | 2004-02-03 | Advanced Micro Devices, Inc. | Selective formation of top memory electrode by electroless formation of conductive materials |
US6656763B1 (en) | 2003-03-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Spin on polymers for organic memory devices |
US6825060B1 (en) | 2003-04-02 | 2004-11-30 | Advanced Micro Devices, Inc. | Photosensitive polymeric memory elements |
US6787458B1 (en) | 2003-07-07 | 2004-09-07 | Advanced Micro Devices, Inc. | Polymer memory device formed in via opening |
US6803267B1 (en) | 2003-07-07 | 2004-10-12 | Advanced Micro Devices, Inc. | Silicon containing material for patterning polymeric memory element |
US6852586B1 (en) | 2003-10-01 | 2005-02-08 | Advanced Micro Devices, Inc. | Self assembly of conducting polymer for formation of polymer memory cell |
Non-Patent Citations (1)
Title |
---|
Web text book document by Van Zeghbroeck Chater 4 published by University of Colorado year 2004 about Diode breakdown voltage. * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9306182B2 (en) | 2009-03-20 | 2016-04-05 | Novaled Ag | Organic zener diode, electronic circuit, and method for operating an organic zener diode |
US8941089B2 (en) | 2012-02-22 | 2015-01-27 | Adesto Technologies Corporation | Resistive switching devices and methods of formation thereof |
US20160111505A1 (en) * | 2012-09-30 | 2016-04-21 | Sensor Electronic Technology, Inc. | Semiconductor Device with Breakdown Preventing Layer |
US9741802B2 (en) * | 2012-09-30 | 2017-08-22 | Sensor Electronic Technology, Inc. | Semiconductor device with breakdown preventing layer |
US9373786B1 (en) | 2013-01-23 | 2016-06-21 | Adesto Technologies Corporation | Two terminal resistive access devices and methods of formation thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI355089B (en) | 2011-12-21 |
WO2006102392A1 (en) | 2006-09-28 |
JP2008536299A (en) | 2008-09-04 |
TW200723546A (en) | 2007-06-16 |
JP5085530B2 (en) | 2012-11-28 |
US20060214183A1 (en) | 2006-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7579631B2 (en) | Variable breakdown characteristic diode | |
US7145824B2 (en) | Temperature compensation of thin film diode voltage threshold in memory sensing circuit | |
KR100869862B1 (en) | Switchable memory diode - a new memory device | |
US8058643B2 (en) | Electrochemical memory with internal boundary | |
KR100988353B1 (en) | Control of memory arrays utilizing zener diode-like devices | |
US6838720B2 (en) | Memory device with active passive layers | |
US7254053B2 (en) | Active programming and operation of a memory device | |
US6858481B2 (en) | Memory device with active and passive layers | |
US7259039B2 (en) | Memory device and methods of using and making the device | |
US7199394B2 (en) | Polymer memory device with variable period of retention time | |
KR20080009278A (en) | Design and operation of a resistance switching memory cell with diode | |
US6960783B2 (en) | Erasing and programming an organic memory device and method of fabricating | |
US7273766B1 (en) | Variable density and variable persistent organic memory devices, methods, and fabrication | |
WO2006086364A1 (en) | Memory element using active layer of blended materials | |
US7344913B1 (en) | Spin on memory cell active layer doped with metal ions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SPANSION LLC, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GAUN, DAVID;BILL, COLIN S.;KAZA, SWAROOP;REEL/FRAME:016944/0252;SIGNING DATES FROM 20050201 TO 20050315 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: BARCLAYS BANK PLC,NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:SPANSION LLC;SPANSION INC.;SPANSION TECHNOLOGY INC.;AND OTHERS;REEL/FRAME:024522/0338 Effective date: 20100510 Owner name: BARCLAYS BANK PLC, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:SPANSION LLC;SPANSION INC.;SPANSION TECHNOLOGY INC.;AND OTHERS;REEL/FRAME:024522/0338 Effective date: 20100510 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: SPANSION LLC, CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:035201/0159 Effective date: 20150312 Owner name: SPANSION TECHNOLOGY LLC, CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:035201/0159 Effective date: 20150312 Owner name: SPANSION INC., CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BARCLAYS BANK PLC;REEL/FRAME:035201/0159 Effective date: 20150312 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., NEW YORK Free format text: SECURITY INTEREST;ASSIGNORS:CYPRESS SEMICONDUCTOR CORPORATION;SPANSION LLC;REEL/FRAME:035240/0429 Effective date: 20150312 |
|
AS | Assignment |
Owner name: CYPRESS SEMICONDUCTOR CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SPANSION, LLC;REEL/FRAME:036044/0122 Effective date: 20150601 |
|
AS | Assignment |
Owner name: CYPRESS SEMICONDUCTOR CORPORATION, CALIFORNIA Free format text: PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:039708/0001 Effective date: 20160811 Owner name: SPANSION LLC, CALIFORNIA Free format text: PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:039708/0001 Effective date: 20160811 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: MONTEREY RESEARCH, LLC, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CYPRESS SEMICONDUCTOR CORPORATION;REEL/FRAME:040911/0238 Effective date: 20160811 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
SULP | Surcharge for late payment |
Year of fee payment: 7 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., NEW YORK Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST;ASSIGNORS:CYPRESS SEMICONDUCTOR CORPORATION;SPANSION LLC;REEL/FRAME:058002/0470 Effective date: 20150312 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 12 |