US7456432B2 - System having electrostatic discharge protection structure and method for manufacturing the same - Google Patents
System having electrostatic discharge protection structure and method for manufacturing the same Download PDFInfo
- Publication number
- US7456432B2 US7456432B2 US11/561,593 US56159306A US7456432B2 US 7456432 B2 US7456432 B2 US 7456432B2 US 56159306 A US56159306 A US 56159306A US 7456432 B2 US7456432 B2 US 7456432B2
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- layer
- conducting
- conducting portion
- disposed
- bridging
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 90
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 230000001413 cellular effect Effects 0.000 claims description 2
- 230000009977 dual effect Effects 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 238000000707 layer-by-layer assembly Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
Definitions
- the present invention relates to a structure adapted for protecting the panel circuit against electrostatic discharges, more specifically, to a system having an electrostatic discharge protection structure adapted to electrically connect the driver circuit with the printed circuit of a display panel and a method for manufacturing the same.
- FIG. 1 The schematic view of a conventional panel structure of a TFT-LCD (thin-film-transistor liquid crystal display) or an OLED (organic light emitting diode or organic light emitting display) is shown in FIG. 1 .
- Driver circuits such as scan lines and data lines, are disposed onto a panel 1 and connected through a bonding pad 2 to flexible printed circuits (FPCs).
- FPCs flexible printed circuits
- the driver circuits electrically connect the bonding pad 2 to the FPCs by means of metal lines 2 a.
- the so-called antenna effect usually occurs in the areas that the bonding pad 2 is located during the assembly process because electric charges tend to accumulate in those areas.
- ESD electrostatic discharge
- an improved system having a structure for ESD protection that does not substantively introduce complicated layouts is required in the market to avoid failures of related components, such as driver circuits, during the manufacturing process.
- the primary objective of this invention is to provide a system having an electrostatic discharge protection structure adapted for a TFT-LCD, by means of disposing an isolating conducting layer in the areas that the antenna effect typically occurs, and then bridging the isolating conducting layer afterward for electrical connection.
- the structure comprises a conducting layer, a material layer and a bridging layer.
- the conducting layer includes a first conducting portion and a second conducting portion disposed independently with the first conducting portion to form a gap therebetween.
- the material layer is disposed onto the conducting layer and includes a first material portion, a second material portion and an intermediate material portion disposed between the first and second material portions.
- the first material portion is disposed onto the first conducting portion and forms a first via hole with the intermediate material portion to expose a part of the first conducting portion
- the second material portion is disposed onto the second conducting portion and forms a second via hole with the intermediate portion to expose a part of the second conducting portion.
- a part of the intermediate material portion is located within the gap.
- the bridging layer is disposed onto the material layer with parts of the bridging layers located within the first and second via holes to electrically connect the first conducting portion to the second conducting portion.
- a conducting layer is formed on a substrate comprising a first conducting portion, a second conducting portion to define a gap formed therebetween.
- a material layer is disposed on the conducting layer, wherein the material layer includes a first material portion, a second material portion and an intermediate material portion formed between the first and second material portions, whereby the first material portion is disposed on the first conducting portion and formed with a first via hole with the intermediate material portion to expose a part of the first conducting portion, the second material portion is disposed on the second conducting portion and formed with a second via hole with the intermediate material portion to expose a part of the second conducting portion, and at least a part of the intermediate material portion is located within the gap.
- a bridging layer is disposed on the material layer with parts of the bridging layer being located within the first and second via holes to electrically connect the first conducting portion to the second conducting portion.
- FIG. 1 is a schematic view illustrating a conceptual structure of an LCD or OLED panel
- FIGS. 2A and 2B are schematic views illustrating the conducting layer of the present invention.
- FIGS. 3A and 3B are schematic views illustrating the conducting layer associated with the material layer of the present invention.
- FIGS. 4A and 4B are schematic views illustrating the conducting layer and the material layer associated with the bridging layer of the present invention.
- FIGS. 5A and 5B are schematic views illustrating the conducting layer associated with the protection layer of the present invention.
- FIG. 6 is a schematic cross-sectional view illustrating the conducting layer and the protection layer associated with the material layer of the present invention
- FIG. 7 is a schematic cross-sectional view illustrating the conducting layer, the protection layer and the material layer associated with the bridging layer of the present invention.
- FIG. 8 is a schematic view illustrating the system of the present invention.
- a system of the present invention which has an electrostatic discharge (ESD) protection structure, is utilized to display images.
- ESD protection structure adapted for a TFT-LCD is described as follows.
- the structure which is disposed on the substrate for connecting the driver circuit and the FPC, is located on the area that indicated by the dash circle 2 A in FIG. 1 .
- the final structure is shown in FIG. 4B , which comprises a conducting layer 3 , a material layer 5 and a bridging layer 7 .
- FIG. 2A shows a top view illustrating the structure of the present invention and
- FIG. 2B shows a cross-sectional view along the dash line 2 B- 2 B′ of the structure.
- the conducting layer 3 disposed on the panel 1 is illustrated in FIG. 2A with an enlarged view for describing with clarity.
- the conducting layer 3 includes a first conducting portion 31 and a second conducting portion 32 disposed independently with the first conducting portion 31 to form a gap 41 therebetween. More specifically, the conducting layer 3 includes a plurality of metal lines in which the first conducting portion 31 connects with driver circuits and the second conducting portion 32 connects with the bonding pad 2 .
- the first conducting portion 31 and the second conducting portion 32 are formed preferably by division, either by etching or photoresisting the conducting layer 3 into two components. Thus, the conducting layer 3 is non-conductive, leaving the bonding pad 2 isolated from the driver circuits.
- FIG. 3A illustrates a top view of the present invention with the material layer 5 and FIG. 3B illustrates a cross-sectional view along the dash line 3 B- 3 B′.
- the material layer 5 can be a planarization layer, which is disposed onto the conducting layer 3 .
- the material layer 5 includes a first material portion 51 , a second material portion 52 and an intermediate material portion 53 which is disposed between the first material portion 51 and the second material portion 52 .
- the first material portion 51 is disposed onto the first conducting portion 31 , forming a first via hole 42 with the intermediate material portion 53 to expose a part of the first conducting portion 31 .
- the second material portion 52 is disposed onto the second conducting portion 32 , forming a second via hole 43 with the intermediate material portion 53 to expose a part of the second conducting portion 32 . Furthermore, a part of the intermediate material portion 53 is located within the gap 41 . Thus, the exposed areas of the first conducting portion 31 and the second conducting portion 32 are reserved for electrical connection by other components disposed thereon. According to various embodiments, the second via hole 43 can be larger than the first via hole 42 , thus conductive resistance can be reduced.
- the bridging layer 7 is disposed onto the material layer 5 with parts of the bridging layer 7 located between the first via hole 42 and the second via hole 43 to electrically connect the first conducting portion 31 to the second conducting portion 32 .
- the electrostatic discharge generated on the bonding pad 2 would not affect the driver circuits via the metal lines because the bonding pad 2 is isolated from the driver circuits during the manufacturing process.
- the above-mentioned structure is provided, preferably, for use in a TFT-LCD.
- the electrostatic discharge protection structure is used for an OLED (e.g. an active matrix organic light emitting diode or display, AMOLED)
- the material layer 5 of the above structure further comprises a protection layer 6 disposed under the material layer 5 to avoid gas and moisture that come from the material layer 5 .
- the protection layer 6 is disposed thereon.
- the protection layer 6 includes a first protection portion 61 , a second protection portion 62 and an intermediate protection portion 63 , which is disposed between the first protection portion 61 and the second protection portion 62 .
- the first protection portion 61 is disposed onto the first conducting portion 31 , forming a first via hole 42 with the intermediate protection portion 63 to expose a part of the first conducting portion 31
- the second protection portion 62 is disposed onto the second conducting portion 32 , forming a second via hole 43 with the intermediate protection portion 63 to expose a part of the second conducting portion 32 .
- a part of the intermediate protection portion 63 is located within the gap 41 .
- the material layer 5 and the bridging layer 7 are disposed in the previously mentioned manner to electrically connect the first conducting portion 31 to the second conducting portion 32 , especially since portions of the bridging layer 7 fall within the first and second via holes 42 , 43 .
- the bridging layer 7 can be made of transparent, translucent, opaque materials, or reflective alloy in response to various needs.
- a bridging layer 7 that is made of transparent material for use in a transmission LCD or a bottom emission type OLED can be a metallic oxide, which is selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide) and etc., that facilitates lights penetrating.
- the bridging layer 7 that is being used in a reflective or transreflective LCD or a top emission type OLED should be made of translucent, opaque, or reflective alloy, such as Al/Nd (aluminum/neodymium).
- the dual/multiple metal layer can serve as the bridging layer 7 in the application of the reflective or transreflective LCD.
- the aforesaid structure can be integrated into the system 8 of the present invention as shown in FIG. 8 .
- the system 8 for displaying images further comprises an electronic device 81 which includes a display panel 83 and an input device 85 .
- the display panel 83 comprises an ESD protection structure, such as the ESD protection structure shown in FIG. 4B and FIG. 7 .
- the input device 85 is coupled to the display panel 83 and operative to provide input to the display panel 83 for displaying images.
- the electronic device 81 is, but is not limited to be, selected from the group of a PDA, a display monitor, a notebook computer, a tablet computer, a digital camera, a television, a car display, a portable DVD player, a cellular phone, and the combination thereof.
- the present invention is to further disclose a method for manufacturing the electrostatic discharge protection structure.
- the method comprises the steps as disclosed below. Please refer to FIGS. 2A ⁇ 4B first, the conducting layer 3 is formed into the first conducting portion 31 and the second conducting portion 32 to define the gap 41 therebetween. Then, the material layer 5 is disposed onto the conducting layer 3 , wherein the material layer 5 includes the first material portion 51 , the second material portion 52 and the intermediate material portion 53 which is formed between the first material portion 51 and the second material portion 52 . The first material portion 51 is disposed onto the first conducting portion 31 and forming the first via hole 42 with the intermediate material portion 53 to expose a part of the first conducting portion 31 .
- the second material portion 52 is disposed onto the second conducting portion 32 and forming the second via hole 43 with the intermediate material portion 53 to expose a part of the second conducting portion 32 . Furthermore, a part of the intermediate material portion 53 is located in the gap 41 .
- the bridging layer 7 is disposed onto the material layer 5 with parts of the bridging layer 7 located in the first via hole 42 and the second via hole 43 to electrically connect the first conducting portion 31 to the second conducting portion 32 .
- the method for manufacturing the electrostatic discharge protection structure further comprises disposing a protection layer 6 onto the conducting layer 3 and the gap 41 before disposing the material layer 5 , and partially exposing a portion of the first conducting portion 31 and the second conducting portion 32 .
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/561,593 US7456432B2 (en) | 2006-11-20 | 2006-11-20 | System having electrostatic discharge protection structure and method for manufacturing the same |
| TW096139250A TWI372582B (en) | 2006-11-20 | 2007-10-19 | System having electrostatic discharge protection structure and method for manufacturing the same |
| CN2007101682830A CN101188899B (en) | 2006-11-20 | 2007-11-01 | System with electrostatic discharge protection structure and method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/561,593 US7456432B2 (en) | 2006-11-20 | 2006-11-20 | System having electrostatic discharge protection structure and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20080117558A1 US20080117558A1 (en) | 2008-05-22 |
| US7456432B2 true US7456432B2 (en) | 2008-11-25 |
Family
ID=39416690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/561,593 Active US7456432B2 (en) | 2006-11-20 | 2006-11-20 | System having electrostatic discharge protection structure and method for manufacturing the same |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7456432B2 (en) |
| CN (1) | CN101188899B (en) |
| TW (1) | TWI372582B (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100889553B1 (en) * | 2007-07-23 | 2009-03-23 | 주식회사 동부하이텍 | System in package and method for fabricating the same |
| WO2010029859A1 (en) * | 2008-09-12 | 2010-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI391737B (en) * | 2009-09-03 | 2013-04-01 | Au Optronics Corp | Active device array mother substrate and fabricating method thereof |
| CN101697052B (en) * | 2009-09-18 | 2011-08-10 | 友达光电股份有限公司 | Active component array motherboard and manufacturing method thereof |
| CN101765289B (en) * | 2009-12-30 | 2012-09-26 | 友达光电股份有限公司 | Electrostatic discharge protective structure and displaying device using the same |
| CN102622114B (en) * | 2011-01-28 | 2015-03-25 | 华映科技(集团)股份有限公司 | Sensor of touch panel |
| TWI493685B (en) | 2012-02-10 | 2015-07-21 | E Ink Holdings Inc | Electrostatic protection structure on active array substrate |
| JP2013205504A (en) | 2012-03-27 | 2013-10-07 | Japan Display Inc | Liquid crystal display device |
| JP2014026199A (en) | 2012-07-30 | 2014-02-06 | Japan Display Inc | Liquid crystal display |
| CN102854643B (en) * | 2012-09-04 | 2015-11-25 | 深圳市华星光电技术有限公司 | A kind of display panels and manufacture method thereof |
| CN103022052B (en) * | 2012-12-14 | 2015-04-08 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN103441119B (en) * | 2013-07-05 | 2016-03-30 | 京东方科技集团股份有限公司 | A kind of method, ESD device and display floater manufacturing ESD device |
| KR102089074B1 (en) * | 2013-11-07 | 2020-03-13 | 엘지디스플레이 주식회사 | Array Substrate for Display Panel and Manufacturing Method for the same |
| KR102317600B1 (en) * | 2014-07-21 | 2021-10-27 | 삼성디스플레이 주식회사 | Display device |
| KR102381283B1 (en) * | 2015-07-24 | 2022-03-31 | 삼성디스플레이 주식회사 | Display apparatus |
| CN204964955U (en) * | 2015-07-28 | 2016-01-13 | 合肥鑫晟光电科技有限公司 | Electricity connection structure , array substrate and display device |
| CN108878443B (en) * | 2017-05-12 | 2020-06-09 | 京东方科技集团股份有限公司 | Display panel, manufacturing method of display panel, and binding method of display panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532853A (en) * | 1993-03-04 | 1996-07-02 | Samsung Electronics Co., Ltd. | Reparable display device matrix for repairing the electrical connection of a bonding pad to its associated signal line |
| US20030052616A1 (en) * | 2001-09-19 | 2003-03-20 | Homer Antoniadis | Organic light emitting diode light source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101108782B1 (en) * | 2004-07-30 | 2012-02-24 | 엘지디스플레이 주식회사 | Liquid Crystal Display device and the fabrication method thereof |
-
2006
- 2006-11-20 US US11/561,593 patent/US7456432B2/en active Active
-
2007
- 2007-10-19 TW TW096139250A patent/TWI372582B/en active
- 2007-11-01 CN CN2007101682830A patent/CN101188899B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532853A (en) * | 1993-03-04 | 1996-07-02 | Samsung Electronics Co., Ltd. | Reparable display device matrix for repairing the electrical connection of a bonding pad to its associated signal line |
| US20030052616A1 (en) * | 2001-09-19 | 2003-03-20 | Homer Antoniadis | Organic light emitting diode light source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101188899B (en) | 2011-12-07 |
| TW200824503A (en) | 2008-06-01 |
| TWI372582B (en) | 2012-09-11 |
| CN101188899A (en) | 2008-05-28 |
| US20080117558A1 (en) | 2008-05-22 |
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