US6758938B1 - Delivery of dissolved ozone - Google Patents

Delivery of dissolved ozone Download PDF

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Publication number
US6758938B1
US6758938B1 US09/386,247 US38624799A US6758938B1 US 6758938 B1 US6758938 B1 US 6758938B1 US 38624799 A US38624799 A US 38624799A US 6758938 B1 US6758938 B1 US 6758938B1
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Prior art keywords
ozone
fluid
approximately
workpiece
pulse
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US09/386,247
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Kevin J. Torek
Jonathan C. Morgan
Paul A. Morgan
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Mosaid Technologies Inc
Advanced Micro Devices Inc
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Micron Technology Inc
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Assigned to ADVANCED MICRO DEVICES, INC. reassignment ADVANCED MICRO DEVICES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, KENT KUOHUA, FANG, HAO, WANG, JOHN JIANSHI
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to US09/386,247 priority Critical patent/US6758938B1/en
Assigned to MICRON TECHNOLOGY, INC. reassignment MICRON TECHNOLOGY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MORGAN, PAUL A., MORGAN, JONATHAN C., TOREK, KEVIN J.
Priority to US09/864,482 priority patent/US6645874B1/en
Priority to US10/829,638 priority patent/US20040194883A1/en
Priority to US10/847,222 priority patent/US20040211514A1/en
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Publication of US6758938B1 publication Critical patent/US6758938B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated

Definitions

  • the present invention relates in general to semiconductor surface preparation, and in particular to the use of dissolved ozone to perform cleaning, etching, and stripping operations.
  • ozone is a particularly useful active reagent.
  • manufacturers use ozone in at least the operations of sterilizing process chambers and wafers, etching oxides, stripping off photoresist material, and the like.
  • a manufacturer uses ozone to loosen undesired portions of photoresist. The manufacturer then washes the undesired portions of photoresist from the workpiece.
  • One way to increase the efficiency of the ozone reaction is to increase the overall amount or concentration of ozone that reaches the workpiece.
  • the concentration of ozone reaching the workpiece is adversely affected by, among other things, ineffective transport of ozone to the workpiece and interfering byproducts of the ozone reaction.
  • manufacturers discovered that water not only acts as a transport solution, but also washes away the interfering byproducts of the ozone reaction.
  • manufacturers began using immersion tanks for operations that involved ozone reactions.
  • immersion tanks immerse the workpiece in a solution, e.g., ozone-enriched water, in order to provide ozone reactions.
  • immersion tanks provide less efficient ozone transportation because although water does transport ozone, water also quickly decomposes some of the ozone into a useless solution. Therefore, water generally has an upper limit on a steady state of ozone concentration.
  • immersion tanks do not wash away the interfering byproducts efficiently because the solutions in immersion tanks are relatively stable.
  • manufacturers developed a “spin and spray” process in order to overcome the drawbacks of immersion tanks.
  • spin and spray process manufacturers spin the workpiece at high velocities while spraying water onto the workpiece in an ozone-enriched ambient.
  • the velocity of the spinning workpiece controls the thickness of a water boundary layer formed thereon.
  • the manufacturers attempted to reduce the ability of the water to decompose the ozone before the ozone could reach the workpiece. This reduction in the ability of the water to decompose ozone helps provide ozone concentrations above the typical limit of the water.
  • the spin and spray process has a variety of drawbacks.
  • the workpiece in order to provide the desired water boundary layer thickness, the workpiece needs to spin at velocities greater than approximately 800 rpm.
  • Such spinning requires a large amount of mechanical complexity and poses a significant risk of damage to the workpiece. While mechanical complexity greatly increases the cost of the process chamber, damage to the workpiece lowers yield rates.
  • One aspect of the invention is to provide an apparatus and method for delivering highly concentrated dissolved ozone to a workpiece in order to increase the ozone reaction therewith.
  • the apparatus includes a process chamber employing an array of spray nozzles that spray a thin water boundary layer onto the workpiece.
  • the water boundary layer transports ozone from the ozone-rich ambient to the workpiece.
  • the workpiece is held substantially stationary.
  • fluid is pulsed through the spray nozzles.
  • the pulsing of the water comprises a limited duty cycle.
  • the wafers are slowly rotated to ensure the water boundary layer on the workpiece is sufficiently uniform.
  • the pulsing of water through the spray nozzles advantageously increases the water's ability to wash away the interfering byproducts of the ozone reaction without increasing the overall amount of water used. This is advantageous because it allows the water boundary layer on the wafers to be very thin.
  • the thin water boundary layer transports ozone from the ozone-rich ambient to the workpiece without supplying enough water to detrimentally decompose the ozone.
  • highly concentrated dissolved ozone reacts with the workpiece without including the drawbacks of mechanical complexity and risk associated with the spin and spray process.
  • an apparatus comprises a pulsator that pulses a solution into an ozone-rich environment to create an ozone-rich solution.
  • an apparatus comprises a sprayer that periodically pulses an ozone-rich solution onto a wafer.
  • an apparatus comprises a rotating platform that is configured to rotate the workpiece.
  • the apparatus further comprises a pulsator that pulses a solution into an ozone-rich environment to create an ozone-rich solution on the workpiece.
  • the apparatus pulses an ozone-rich solution onto the workpiece.
  • One aspect of the invention relates to a method for stripping a layer from a semiconductor wafer.
  • the method comprises introducing ozone into a process chamber and activating a water spray for a first predetermined amount of time, thereby creating a water layer on a semiconductor wafer, wherein the water layer transports high concentrations of the ozone to the semiconductor wafer.
  • the method further comprises deactivating the water spray for a second predetermined amount of time, thereby controlling a thickness of the water layer; and re-activating and re-deactivating the water spray until the ozone substantially removes portions of the layer from the semiconductor wafer.
  • an ozone shower system that comprises an ozone source.
  • the ozone source is configured to supply ozone to a process chamber.
  • the ozone shower system also comprises a sprayer connected to a fluid source such that fluid sprays over a workpiece in the process chamber.
  • the ozone shower system further comprises a pump connected to the fluid source, and a selector valve connected to the pump. The selector valve is configured to selectively pulse the fluid through the sprayer.
  • An additional aspect of the invention relates to a method that comprises introducing a reagent to an ambient and activating a solution spray in the ambient for a first time period.
  • the method also comprises deactivating the solution spray for a second time period, thereby increasing the efficiency of a reaction of the reagent and a workpiece.
  • reaction chamber that comprises a gas input and a plurality of nozzles connected to a nozzle manifold.
  • the reaction chamber further comprises a wafer cartridge that holds wafers.
  • the reaction chamber also comprises a first fluid line connected to the nozzle manifold.
  • a second fluid line is configured to divert water flow away from the first water line.
  • Yet another embodiment of the invention is a reaction chamber that comprises at least one nozzle connected to a fluid supply wherein the nozzle is configured to pulse fluid onto a workpiece.
  • the reaction chamber also comprises a rotator that rotates the workpiece at a velocity ranging from approximately 100 rpm to stationary.
  • Another aspect of the invention relates to an apparatus that comprises at least one wafer-processing chamber wherein an ozone rich environment exists within the wafer-processing chamber.
  • the apparatus further comprises a sprayer, and a pulsating fluid source.
  • the pulsating fluid source is configured to pulse a solution through the sprayer into the ozone rich environment.
  • An additional aspect of the invention relates to an apparatus that comprises at least one semiconductor processing chamber and a pulsating fluid source.
  • the pulsating fluid source is configured to pulse an ozone-rich solution into the semiconductor processing chamber.
  • Yet another aspect of the invention relates to a method that comprises introducing a reagent into an ambient, and pulsing a solution spray in the ambient, thereby increasing the efficiency of a reaction of the reagent.
  • Another embodiment of the invention relates to an ozone shower system that comprises a process chamber and a pump.
  • the pump is connected to the process chamber and configured to pulse a solution into the process chamber.
  • FIG. 1 illustrates a flow diagram of a pulsing process according to one embodiment of the invention
  • FIG. 2 illustrates a schematic of an ozone shower system, in accordance with another embodiment of the invention
  • FIG. 3 illustrates a process chamber of FIG. 2
  • FIG. 4 illustrates a chamber lid of FIG. 3
  • FIG. 5 illustrates a rotation mechanism of FIG. 2 .
  • the skilled artisan will find application for delivery of highly concentrated dissolved ozone in a wide variety of contexts.
  • the disclosed delivery of highly concentrated dissolved ozone has utility in many cleaning, etching, and stripping processes involved in the fabrication of a wide variety of workpieces.
  • the delivery of highly concentrated dissolved ozone has utility in PC Board fabrication and the like.
  • FIG. 1 illustrates a flow diagram of a pulsing process 10 according to one embodiment of the invention.
  • Step S 1 introduces a reagent into an environment where the reagent can react.
  • Step S 2 activates a solution spray.
  • Step S 3 deactivates the solution spray.
  • Decision S 4 determines if enough time has elapsed to substantially complete a desired reaction. If enough time has elapsed, the pulsing process 10 ends. However, if more time is required, the pulsing process 10 returns to Step S 2 , activates the solution spray, and repeats the steps disclosed above.
  • the reagent is ozone being introduced into the environment for any of a wide variety of reasons.
  • the ozone could be used to clean or sterilize the workpiece.
  • the ozone could also be used to etch a semiconductor layer on, or strip another layer from the workpiece.
  • the ozone strips a photoresist layer from the semiconductor wafer.
  • the solution includes deionized water.
  • the deionized water acts both as a carrier of the ozone to the semiconductor wafer and as a cleaning solution for the byproducts of an ozone-photoresist reaction.
  • Step S 2 activation
  • Step S 3 deactivation
  • Decision S 4 the water spray is pulsed over the photoresist.
  • the pulsing of the water establishes at least the following advantageous characteristics.
  • the pulsing of the water advantageously provides less overall water to the photoresist. Less water creates a water boundary layer on the photoresist, thereby allowing the ozone to supersaturate the water above the water's normal ozone concentration capacity. This supersaturation, or highly concentrated dissolved ozone, increases the amount of ozone reaching the photoresist, thereby dramatically decreasing the time needed for the ozone to react with substantially all of the photoresist.
  • the pulsing of the water increases its ability to wash away or remove the leftover and interfering byproducts of the ozone-photoresist reaction.
  • the water boundary layer pulses from the activation and deactivation of the spray. The pulsing helps loosen and break “chunks” of photoresist from the semiconductor substrate. The water boundary layer then washes away the chunks from interfering with further ozone-photorcsist reactions, thereby increasing the effectiveness of the already highly concentrated dissolved ozone reaching the semiconductor wafer.
  • the pulsing process 10 decreases the time needed to substantially strip photoresist from the semiconductor wafer.
  • the decrease in time advantageously speeds overall semiconductor fabrication process flows, thereby decreasing the overall cost of fabrication.
  • the pulsing process 10 includes a duty cycle and a pulse rate.
  • the duty cycle is the ratio between the time the water spray is activated, e.g., StepS 2 , and the cycle time, e.g., StepS 2 +StepS 3 .
  • the pulse rate is the inverse of the cycle time, i.e., 1 StepS2 + StepS3 .
  • the pulsing process 10 employs a 20% duty cycle. In this embodiment, approximately 5 seconds of water spray activation and is followed by approximately 20 seconds of water spray deactivation. Therefore, the pulse rate is approximately one pulse every 25 seconds.
  • the time needed to substantially strip photoresist from the semiconductor wafer is dramatically decreased.
  • approximately 12.6 k ⁇ of hard baked (130° C. for 90 sec.) 10 i photoresist can be substantially stripped from a selection of semiconductor wafers in 20 minutes.
  • the above-disclosed pulsing process 10 is employed, the same 12.6 k ⁇ of 10 i photoresist is substantially stripped from the selection of semiconductor wafers in just 5 minutes.
  • the pulsing process 10 employs a 50% duty cycle wherein one second of spray activation is followed by approximately one second of water spray deactivation. Therefore, the pulse rate is approximately one pulse every 2 seconds. In yet other embodiments, the pulsing process 10 employs approximately an 8% duty cycle wherein five seconds of spray activation is followed by approximately sixty seconds of water spray deactivation. Therefore, the pulse rate is approximately one pulse every 60 seconds.
  • pulse ranges can vary over a vide range including, but not limited to, approximately one pulse per minute to as many as 30 pulses per minute. In addition, the skilled artisan will recognize that the duty cycles can range from 3 percent up to 97 percent.
  • the temperature of the water is heated from approximately 60° C. to approximately 95° C. In other embodiments, the water is maintained at an ambient temperature of approximately 20° C. In yet other embodiments, the water is maintained at sub-ambient temperatures less than 20° C. Thus, the temperature of the water can be calibrated to a wide range of temperatures including, but not limited to from less that 20° C. to more than 95° C.
  • FIG. 2 illustrates a schematic of an ozone shower system 15 in accordance with one embodiment of the invention.
  • the ozone shower system 15 includes a process chamber 20 having a chamber lid 25 , a full chamber 30 , and a short chamber 35 .
  • a pump 40 pumps water from the full chamber 30 to a heater 45 . As the water passes through the heater 45 , the heater 45 raises the water temperature to desired levels. The water then travels through a flush valve 50 .
  • the flush valve 50 allows for the addition of water to the ozone shower system 15 .
  • the water then flows through a filter 55 and on to a selector valve 60 .
  • the selector valve 60 directs the water into one of two paths.
  • the filtered heated water directed through the first path travels to the chamber lid 25 and eventually to the full chamber 30 .
  • the water in the first path completes a water cycle from the fill chamber 30 , through the pump 40 , through a first path, and back to the fiull chamber 30 .
  • the selector valve 60 could also direct the filtered heated water through a second path.
  • the filtered heated water directed through the second path travels to a drain valve 65 .
  • the drain valve 65 allows for excess water removal from the ozone shower system 15 .
  • the filtered heated water in the second path then travels to the short chamber 35 . After the short chamber 35 fills with water, excess water spills over into the full chamber 30 .
  • the water in the second path also completes a water cycle from the full chamber 30 , through the pump 40 , through the second path, and back to the full chamber 30 .
  • an ozone source supplies ozone to the ambient in the full chamber 30 through the chamber lid 25 .
  • the ozone shower system 15 circulates water through the first or second path while an ozone rich environment exists in the full chamber 30 .
  • the ozone from the ozone source is injected into the fluid in the first path, the second path or both paths. The injected ozone creates an ozone rich fluid that is applied to a workpiece as described in further detail below.
  • the pump 40 is a bellow pump commercially available from White Knight Fluid Handling, Inc.
  • the heater 45 is an in-line heater commercially available from Santa Clara Plastics.
  • the flush valve 50 , the selector valve 60 and the drain valve 65 are three-way valves commercially available from Fluoroware.
  • the filter 55 is an inert particle filter commercially available from Pall Corporation.
  • the ozone source is an Astex 8200 Ozone Generator configured to peak performance recommendations by the manufacturer.
  • the oxygen and nitrogen supplies are set to supply approximately greater than 13 percent by weight ozone concentration to the ambient.
  • ozone sources filters, valves, heaters, and pumps could be advantageously employed in the ozone shower system 15 .
  • the pump 40 could be a centrifuge pump.
  • the heater 45 could be a heat exchanger.
  • the valves could be two-way valves.
  • the filter 55 could be a charged particle filter.
  • the ozone source could be an electrolytic type generator.
  • FIG. 3 illustrates one embodiment of the process chamber 20 .
  • the process chamber 20 includes the chamber lid 25 covering the full chamber 30 and the short chamber 35 .
  • the full chamber 30 and the short chamber 35 are separated by a wall 68 .
  • the wall 68 has a height less than that of the full chamber 30 such that a space exists between the top of the wall 68 and the chamber lid 25 .
  • the chamber lid 25 includes a water manifold 70 having an array of spray nozzles 75 .
  • the spray nozzles 75 are configured such that when the chamber lid 25 covers the full chamber 30 and the short chamber 35 , the spray nozzles 75 extend above the full chamber 30 .
  • the full chamber 30 holds wafers 80 in a cassette 85 .
  • the cassette 85 rests on a stand 90 .
  • the stand 90 in turn rests on the bottom of the full chamber 30 .
  • a pump pool 95 fills the bottom of the full chamber 30 to a height less than that of the stand 90 such that the pump pool 95 does not reach the cassette 85 or the wafers 80 .
  • a diverted pool 98 fills the short chamber 35 .
  • the spray nozzles 75 in the spray lid 25 are cone spray nozzles commercially available from Santa Clara Plastics.
  • the chamber lid 25 could employ shower massage nozzles, knife-edge nozzles, or the like.
  • the spray nozzles 75 attach to the water manifold 70 such that when activated, a substantially uniform water boundary layer forms on each of the wafers 80 .
  • the cassette 85 holds 13 of the wafers 80 and is commercially available from Santa Clara Plastics.
  • Santa Clara Plastics a variety of cassettes or other devices could be used to hold a wide number of the wafers 80 .
  • the number of the wafers 80 for a given cassette is often simply vendor dependent.
  • the cassette 85 may be altogether avoided and the process chamber 20 could employ robot arms or the like.
  • a robot arm for holding and exchanging the wafers 80 is commercially available from Submicron Systems.
  • FIG. 4 illustrates an array of the spray nozzles 75 on the spray lid 25 , according to one embodiment of the invention.
  • FIG. 4 illustrates the array comprising six rows and four columns. The six rows and four columns are depicted from the perspective of the wafers 80 such that the wafers 80 align parallel to the rows.
  • the spray nozzles 75 in the 6 rows are separated from each other by 1.75 inches and the spray nozzles 75 in the 4 columns are separated from each other by 2.5 inches.
  • a wide variety of patterns and distances could be used arrange the spray nozzles 75 in order to provide the substantially uniform water boundary layer on the wafers 80 .
  • the spray lid 25 further includes an ozone nozzle 100 .
  • the ozone nozzle 100 and the spray nozzles 75 are the same, outside of the fact that the ozone nozzle 100 does not connect to the water manifold 70 . Rather, the ozone nozzle 100 connects to the ozone source such that the ozone nozzle 100 supplies ozone into the ambient in the full chamber 30 .
  • the ozone source could supply ozone to the process chamber 20 .
  • the ozone nozzle 100 could be entirely different from the spray nozzles 75 and enter the process chamber 20 from a position other than the center of the array of the spray nozzles 75 .
  • the chamber lid 25 could comprise multiple ozone nozzles 100 creating multiple entry points for the ozone into the full chamber 30 .
  • the ozone shower system 15 employs the pulsing process 10 in order to decrease the time needed to strip photoresist from the wafers 80 .
  • the ozone source of the ozone shower system 15 pumps ozone into the full chamber 30 through the ozone nozzle 100 .
  • the ozone concentration is at least 13 weight percent.
  • the pump 40 begins pumping water from the pump pool 95 through the heater 45 .
  • the heater 45 heats the water to approximately 60-95° C.
  • the pump 40 then pumps the water though the filter 55 to remove contaminates.
  • the selector valve 60 directs the now filtered heated water through the first path to the chamber lid 25 and the water manifold 70 .
  • the water manifold 70 distributes the filtered heated water to the array of the spray nozzles 75 .
  • the spray nozzles 75 spray the filtered heated water on the wafers 80 such that the water sheets over the photoresist, thereby forming the water boundary layer.
  • As the filtered heated water sheets off the wafers 80 it falls through or around the cassette 85 and the stand 905 such that the filtered heated water collects in the pump pool 95 .
  • the selector valve 60 continues to direct the filtered heated water through the first path for approximately 5 seconds.
  • Step S 3 the selector valve 60 redirects the filtered heated water into the second path, thereby shutting off the supply of water to the spray nozzles 75 .
  • This redirection effectively deactivates the spray nozzles 75 .
  • the filtered heated water travels through the second path to the short chamber 35 where it flows into the diverted pool 98 .
  • the diverted pool 98 becomes deeper than the height of the wall 68
  • the filtered heated water in the diverted pool 98 spills over the wall 68 and into the pump pool 95 in the full chamber 30 .
  • the water spilling over the wall 68 does not touch or effect the wafers 80 , rather, it simply adds to the pump pool 95 .
  • the selector valve 60 continues to direct the filtered heated water through the second path for 20 seconds.
  • Step S 4 the ozone shower system 15 determines whether five minutes has elapsed since first activating the pump 40 . If so, the pump 40 shuts down. On the other hand, if 5 minutes has not elapsed, the selector valve 60 redirects the filtered heated water back through the first path and reactivates the spray nozzles 75 , thereby restarting Step S 2 .
  • Using the selector valve 60 to redirect the filtered heated water advantageously makes continued starting and stopping the pump 40 unnecessary. By using redirection, the pump 40 continues to pump throughout the ozone-photoresist reaction time. Furthermore, the employment of the pump pool 95 advantageously ensures the pump 40 will not run dry and allows for recycling of the filtered heated water.
  • employing the pulsing process 10 in the ozone shower system 15 advantageously reduces the time needed to strip substantially all the photoresist from the wafers 80 .
  • the pulsing process 10 accomplishes this reduction without rotating the wafers 80 at high velocities.
  • the wafers 80 are held stationary.
  • the water boundary layer should be as uniform as possible. Thicker areas of the water boundary layer can effect the ability of the water to transport the highly concentrated dissolved ozone to the photoresist, thereby slowing the stripping process.
  • the water boundary layer may vary in thickness in at least two places.
  • the cassette 85 typically uses two horizontal rods contacting the wafers 80 . The surface tension of the horizontal rods contacting the wafers 80 tends to thicken the water boundary layer in those areas.
  • gravity can cause the water boundary layer to “channel” towards a point near the bottom of the wafers 80 , thereby thickening the water boundary layer in that area as well.
  • FIG. 5 illustrates a side view of the wafer 80 and the cassette 85 .
  • the cassette 85 includes a portion 87 that holds each wafer 80 .
  • the portion 87 could be the above-mentioned horizontal rods, or as shown in FIG. 5, the portion 87 could comprise a concave slot substantially matching the curvature of the bottom of the wafer 80 .
  • Each concave slot could correspond to each wafer 80 in the cassette.
  • two rotating axles 120 contact the wafers 80 .
  • the two rotating axles 120 substantially support the wafers 80 allowing for a gap 125 to exist between the cassette 85 and the wafers 80 .
  • the two rotating axles 120 rotate in the one direction such that the wafers 80 rotate in the other.
  • the two rotating axles 120 rotate to the left, thereby rotating the wafers 80 to the right.
  • rotating mechanisms could be used to rotate the wafers 80 .
  • the cassette 85 includes horizontal rods to support the wafers 80 , those horizontal rods themselves could be rotated.
  • the two rotating axles 120 rotate the wafers 80 at velocities ranging from about 100 revolutions per minute (rpm) to stationary. According to one embodiment, the two rotating axles 120 rotate the wafers 80 at approximately 3 rpm.
  • the slow rotation of the wafers 80 changes both the area where the cassette 85 contacts the wafers 80 , and which area of the wafers 80 comprises the bottom. Therefore, by slowly rotating the wafers 80 , the ozone shower system 15 advantageously provides a more uniform water boundary layer. Through the more uniform water boundary layer, the ozone shower system 15 provides efficient transport of highly concentrated dissolved ozone to the photoresist on the wafers 80 . The efficient transport dramatically reduces the processing time for the ozone-photoresist reaction, thereby increasing semiconductor process flow efficiency. Also, slow rotation of the wafers 80 avoids the mechanical complexity and risk of damage associated with very high rotation velocities.
  • the ozone shower system 15 employs slow rotation of the wafers 80
  • the ozone shower system 15 could employ rotating spray nozzles 75 that correct for channeling and gravity problems.
  • the ozone shower system 15 could aim the spray nozzles 75 such that the water spray contacts the wafers 80 in a manner that causes a slow rotation.
  • knife-edge spray nozzles could provide a spray that contacts only one side of the each wafer 80 , thereby slowly rotating the wafer inside the cassette 85 . Such an embodiment avoids the use of the two rotating axles 120 .
  • the ozone shower system 15 could employ tipping mechanism that tips the wafers 80 from side to side in order to create uniform water boundary layers. Further, the ozone shower system 15 could employ non-mechanical means to combat non-uniformity. For example, surfactants, acid spiking, water vapor, heated workpiece, and very hot water could also be included to help improve the ozone-photoresist reactions.
  • the ozone could also be pulsed into the process chamber 20 and the ozone pulse could also have a limited duty cycle.
  • other combinations, omissions, substitutions and modification will be apparent to the skilled artisan, in view of the disclosure herein. Accordingly, the present invention is not intended to be limited by the recitation of the preferred embodiments, but is instead to be defined by reference to the appended claims.
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US20030196678A9 (en) 2003-10-23
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US20040194883A1 (en) 2004-10-07
US20010037816A1 (en) 2001-11-08

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