US6744142B2 - Flip chip interconnection structure and process of making the same - Google Patents
Flip chip interconnection structure and process of making the same Download PDFInfo
- Publication number
- US6744142B2 US6744142B2 US10/248,992 US24899203A US6744142B2 US 6744142 B2 US6744142 B2 US 6744142B2 US 24899203 A US24899203 A US 24899203A US 6744142 B2 US6744142 B2 US 6744142B2
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- layer
- tin
- copper
- intermetallic compound
- carrier substrate
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- 238000000034 method Methods 0.000 title abstract description 30
- 230000008569 process Effects 0.000 title abstract description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910000679 solder Inorganic materials 0.000 claims abstract description 61
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 30
- 239000002131 composite material Substances 0.000 claims abstract description 25
- 239000010949 copper Substances 0.000 claims description 49
- 229910052802 copper Inorganic materials 0.000 claims description 45
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 44
- 229910052718 tin Inorganic materials 0.000 claims description 27
- 239000011651 chromium Substances 0.000 claims description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910018471 Cu6Sn5 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 46
- 238000004901 spalling Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 9
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910017755 Cu-Sn Inorganic materials 0.000 description 6
- 229910017927 Cu—Sn Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000000872 buffer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- -1 Cu—Sn compound Chemical class 0.000 description 1
- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910018532 Ni—Sn Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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Definitions
- the invention relates generally to flip chip interconnection structure and a manufacture process of the flip chip interconnection structure that prevent spalling effects. More particularly, the invention forms a composite intermetallic compound in the flip chip interconnection structure to prevent spalling effects.
- solder material In the semiconductor packaging process, the use of lead-free solder material has met concrete developments in respect of certain aspects such as for attachments of ball grid array (BGA) packages or surface mount dies.
- BGA ball grid array
- C 4 controlled collapse chip connection
- the skilled artisan knows that the use of lead-free solder material for the connecting bumps between the chip and the carrier substrate causes spalling effects of the UBM layer. This consequently deteriorates in substantial manner the strength of the solder joint within the flip chip interconnection structure.
- FIG. 1 is a schematic view that illustrates a conventional flip chip interconnection structure.
- a conventional flip chip interconnection structure usually attaches a chip 100 through bumps 108 to a carrier substrate 110 .
- An underfill material 114 is further filled between the chip 100 and the carrier substrate 110 to buffer the mechanical stresses induced in the bumps 108 due to thermal mismatch between the chip 100 and the carrier substrate 110 .
- An active surface 100 a of the chip 100 includes bonding pads 102 and a passivation layer 104 that has openings 105 exposing the bonding pads 102 .
- the carrier substrate 110 includes contact pads 112 that correspond to the bonding pads 102 .
- an under bump metallization (UBM) layer 106 is commonly interfaced between each bonding pad 102 and bump 108 .
- a structure of UBM layer 106 known in the prior art comprises a chromium (Cr) layer 106 a , a copper (Cu) layer 106 b and a gold (Au) layer 106 c , while the bumps 108 are commonly made of a solder material.
- the chip 100 is mounted on the carrier substrate 110 and a reflow process is performed to turn the solder material to solder bumps 108 .
- a double-layers structure of the UBM layer comprising chromium/nickel is also known in the prior art.
- the UBM layer comprises a triple-layers structure of Cr/Cu/Au
- tin (Sn) in the solder material will typically react with copper of the UBM layer to form copper-tin (Cu—Sn) intermetallic compound.
- tin (Sn) of the solder material will typically react with nickel (Ni) of the solder material to form a tin-nickel (Sn—Ni) intermetallic compound.
- the known intermetallic compound has high interfacial energy with chromium of the UBM layer.
- the Cu—Sn or Sn—Ni intermetallic compound spalls and becomes spherical, and then peels from the surface of the chromium layer of the UBM layer to flow into the solder material. This spalling and peeling effect seriously deteriorates the strength of the solder joint in the flip chip package.
- An aspect of the invention is therefore to provide a flip chip interconnection structure and a process for fabricating the same flip chip interconnection structure, in which a composite intermetallic compound is formed to prevent spalling effects.
- a flip chip interconnection structure of the invention comprises at least a tin-containing solder bump that is selectively formed between a bonding pad of an electronic chip and a contact pad of a carrier substrate.
- the tin-containing solder bump is formed on an under bump metallization (UBM) layer itself formed on the bonding pad of the chip.
- UBM under bump metallization
- a composite intermetallic is interfaced between the tin-containing solder bump and the UBM layer to prevent the occurrence of spalling effects of the UBM layer.
- An underfill material is further filled between the chip and the carrier substrate to encapsulate the tin-containing solder bump.
- the invention further provides a manufacture process of a flip chip interconnection structure suitable for flip chip bonding of an electronic chip to a carrier substrate.
- a UBM layer is formed on at least a bonding pad of the chip, and a tin-containing solder material is formed on the UBM layer.
- the chip is mounted on the carrier substrate by alignment of the bonding pad with a contact pad of the carrier substrate.
- a copper reservoir is further provided in proximity of the tin-containing solder material.
- a reflow process then is performed to respectively turn the tin-containing solder material to a tin-containing solder bump and form a composite intermetallic compound between the tin-containing solder bump and the UBM layer to prevent spalling effects.
- the UBM layer includes a nickel (Ni) layer that reacts with tin (Sn) of the solder material and copper (Cu) of the copper reservoir during reflowing to form the composite intermetallic compound.
- Ni nickel
- a portion of the composite intermetallic compound adjacent to the UBM layer thereby includes Cu 6 Sn 5 while a portion of the composite intermetallic compound adjacent to the tin-containing solder bump includes (Cu, Ni) 6 Sn 5 .
- the nickel layer of the UBM layer is isolated from the solder material, which therefore prevents spalling of the UBM layer.
- the copper reservoir is constituted via introducing copper particles in the tin-containing solder material formed on the UBM layer.
- the copper reservoir is constituted via having the contact pad of the carrier substrate made of copper.
- FIG. 1 is a schematic view that illustrates a conventional flip chip interconnection structure
- FIG. 2 is a flow chart that illustrates a manufacture process of a flip chip interconnection structure according to an embodiment of the invention
- FIG. 3 is a schematic view of a stage in the manufacture process according to an embodiment of the invention, in which a tin-containing solder material includes copper particles as copper reservoir;
- FIG. 4 is a schematic view of another stage in the manufacture process of the invention subsequent to the stage shown in FIG. 3, in which a bump and a composite intermetallic compound are formed by reflow process;
- FIG. 5 is a flow chart that illustrates a manufacture process of a flip chip interconnection structure according to another embodiment of the invention.
- FIG. 6 is a schematic view of a stage in a manufacture process according to an embodiment of the invention, in which a copper contact pad of the carrier substrate is used as copper reservoir;
- FIG. 7 is a schematic view of another stage in the manufacture process of the invention subsequent to the stage shown in FIG. 6, in which a bump and a composite intermetallic compound are formed by reflow process.
- FIG. 2 through FIG. 4 describe the manufacture process of a flip chip interconnection structure according to an embodiment of the invention.
- FIG. 2 is a flow chart of the manufacture process of the flip chip interconnection structure. As illustrated, the manufacture process comprises:
- an active surface of a chip 200 includes at least a bonding pad 202 and, for example, a passivation layer 204 that covers the active surface 200 a and is provided with at least an opening 205 that exposes the bonding pad 202 .
- the bonding pad 202 may be made of, for example, aluminum, copper, or other adequate metals.
- a UBM layer 206 is formed on the bonding pad 202 .
- the UBM layer 206 is, for example, a double-layers structure preferably including a chromium (Cr) layer 206 a (adhesion layer) and a nickel (Ni) layer 206 b .
- the chromium layer 206 a is, for example, 500 ⁇ -thick, and the UBM layer 206 is, for example, 2000 ⁇ -thick.
- a tin-containing solder material 208 a that includes copper particles 220 .
- the solder material 208 a is formed via, for example, screen printing.
- the solder material 208 a is preferably lead-free solder such as, for example, SnAg 3.5 , and the copper particles 220 may consist of, for example, high-purity (99.99%) copper.
- a provided carrier substrate 210 includes at least a contact pad 212 .
- the contact pad 212 can be made of adequate metals such as copper.
- the surface of the contact pad 212 may be further plated with a nickel film 216 .
- the chip 200 then is mounted on the carrier substrate 210 by alignment of the bonding pad 202 with the contact pad 212 . A reflow process is subsequently performed.
- a copper reservoir is provided in proximity of the solder material 208 a to trigger a reaction that forms a protective composite intermetallic compound.
- the copper reservoir is constituted via the introduction of copper atoms under the form of particles 220 in the solder material 208 a .
- the added copper atoms diffuse within the entire solder material, and a nickel-containing (Ni—Sn) intermetallic compound is formed on the nickel layer 206 b .
- the solder material further reacts with the copper atoms to progressively deposit a copper-tin (Cu—Sn) intermetallic compound on the nickel-containing intermetallic compound, forming a composite intermetallic compound 218 .
- Cu—Sn copper-tin
- the above deposition of Cu—Sn intermetallic compound on the nickel-containing intermetallic compound isolates the nickel layer 206 b from the solder material and effectively prevents a reaction there between. Furthermore, a solidification reaction occurs between the nickel layer 206 b and the Cu—Sn intermetallic compound and the nickel-containing intermetallic compound, which further slows down the reaction involving the nickel layer 206 b . The consumption of the nickel layer 206 b is thereby prevented, which therefore substantially limits spalling of the UBM layer 206 .
- the tin-containing solder material 208 a is turned to a tin-containing solder bump 208 b while the composite intermetallic compound 218 between the solder bump 208 b and the nickel layer 206 b includes two different types of material.
- a portion of the composite intermetallic compound adjacent to the nickel layer 206 b includes Cu 6 Sn 5 while a portion of the composite intermetallic compound adjacent to the solder bump 208 b includes (Cu, Ni) 6 Sn 5 , formed by solidification.
- an underfill material 214 is formed between the chip 200 and the substrate 210 .
- the underfill material 214 can be, for example, polyimide.
- the underfill material 214 buffers the mechanical stresses induced in the solder bump 208 b due to thermal mismatch between the chip 200 and the carrier substrate 210 , which thereby improves the reliability of the interconnection structure.
- FIG. 5 through FIG. 7 describe the manufacture process of a flip chip interconnection structure that reduces the spalling effects according to another embodiment of the invention.
- FIG. 5 is a flow chart illustrating the manufacture process of this variant embodiment of the invention. As illustrated, the manufacture process of this variant embodiment comprises:
- This embodiment differs from the previous embodiment in that the copper reservoir needed to form the composite intermetallic compound is embodied through a contact pad of the carrier substrate that is made of copper.
- an active surface of a chip 300 includes at least a bonding pad 302 and a passivation layer 304 that covers the active surface 300 a and is provided with at least an opening 305 that exposes the bonding pad 302 .
- a UBM layer 306 is formed on the bonding pad 302 .
- the UBM layer 306 may have, for example, a double-layers structure including a chromium (Cr) layer 306 a and a nickel (Ni) layer 306 b .
- a tin-containing solder material 308 a is formed on the UBM layer 206 by, for example, screen printing.
- the tin-containing solder material 308 a is preferably lead-free solder such as, for example, SnAg 3.5 .
- a provided carrier substrate 310 includes at least a contact pad 312 preferably made of copper. Copper of the contact pad 312 preferably has a high purity of about 99.99%.
- a nickel film 316 is formed on the surface of the copper contact pad 312 and includes an opening 317 that partially exposes the copper contact pad 312 .
- the chip 300 is mounted on the carrier substrate 310 by alignment of the bonding pad 302 with the copper contact pad 312 . A reflow process then is performed.
- the copper reservoir of the copper contact pad 312 provides the copper atoms needed to form a composite intermetallic compound 318 in a manner similar to that described in the previous embodiment.
- solder material 308 a is turned to a tin-containing bump 308 b .
- An underfill material 314 then is formed between the chip 300 and the carrier substrate 310 .
- the invention therefore provides a structure of flip chip interconnection that favorably prevents spalling of the UBM layer by interfacing a composite intermetallic compound between the UBM layer and the solder bump.
- the composite intermetallic compound is formed through a reaction between nickel from a nickel layer of the UBM layer, tin from the solder material, and copper from a copper reservoir.
- the copper reservoir may be embodied under different forms.
- the copper reservoir is formed via adding copper particles in the solder material of the tin-containing bump.
- the copper reservoir is embodied through a contact pad of the carrier substrate that is made of copper.
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Abstract
Description
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US10/248,992 US6744142B2 (en) | 2002-06-19 | 2003-03-07 | Flip chip interconnection structure and process of making the same |
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US10/065,297 US6642079B1 (en) | 2002-06-19 | 2002-10-01 | Process of fabricating flip chip interconnection structure |
US10/248,992 US6744142B2 (en) | 2002-06-19 | 2003-03-07 | Flip chip interconnection structure and process of making the same |
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