US6741446B2 - Vacuum plasma processor and method of operating same - Google Patents
Vacuum plasma processor and method of operating same Download PDFInfo
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- US6741446B2 US6741446B2 US09/821,026 US82102601A US6741446B2 US 6741446 B2 US6741446 B2 US 6741446B2 US 82102601 A US82102601 A US 82102601A US 6741446 B2 US6741446 B2 US 6741446B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Definitions
- One of the elements of memory system 24 typically read-only memory 30 , stores preprogrammed values for controlling the output power of amplifier 102 and/or 132 during a step of the recipe of plasma 50 processing workpiece 54 .
- the preprogrammed values thereby control the amount of power that coil 48 and/or electrode 56 supply to the plasma 50 in chamber 40 to enable the power that coil 48 and/or electrode 56 supplies to the plasma to change as a function of time in accordance with a preprogrammed predetermined function.
- arrays of mutually electrically insulated electrodes are instrumental in providing control of the plasma electric properties and/or the workpiece temperature.
- An array of such electrodes can be provided in the workpiece holder or as a reactance at the top of the chamber for coupling AC plasma excitation energy to gas in the chamber.
- the electrodes supply AC power to the plasma and can be arranged to provide electrostatic chucking of the workpiece and/or form part of each of the thermoelectric devices, and/or part of sensors for the workpiece position relative to the workpiece holder.
- An AC source arrangement preferably drives each of the electrodes so that different electrodes of the arrays are supplied with AC power having differing frequencies and/or magnitudes.
- Semiconductor structures 226 and 228 and electrodes 202 , 204 and 206 of temperature controllers 220 , 222 and 224 are thermally connected to the localized portions of workpiece 54 immediately above electrodes 202 , 204 and 206 , respectively; that is, there is a heat transfer relation between the temperature controllers and the localized portions of the workpiece immediately above the electrodes of each of the temperature controllers.
- Microprocessor 20 responds to the power, impedance and energy values determined in accordance with Equations 1, 2 and 3 to control the gain and hence output power of amplifier 250 and/or the connections provided by switch array 248 between RF sources 242 , 244 and 246 and electrode 202 .
- FIG. 5 is a top view of electrode array 300 , a second preferred embodiment of an electrode array in accordance with the present invention.
- the specific, illustrated embodiment of electrode array 300 is for use in connection with circular workpieces, but it is to be understood that similar principles can be employed with rectangular workpieces.
- Each of the electrodes of stripes 302 and 304 is connected by way of a network similar to networks 256 , 258 and 260 to an AC source arrangement similar to source arrangement 240 , to a switch array similar to switch array 248 , and to a separate power amplifier similar to power amplifiers 250 , 252 and 254 .
- each of the electrodes of stripes 302 and 304 is preferably associated with a temperature sensor similar to temperature sensors 234 and a thermoelectric temperature controller similar to thermoelectric temperature controllers 220 , 222 and 224 . Because of the small area of the electrodes of stripes 302 and 304 relative to the electrodes of array 200 , array 300 can provide much more accurate control of the plasma energy and density coupled to workpiece 54 , and of the workpiece temperature, than is attained by array 200 .
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
A vacuum plasma processor includes an electrode array with plural mutually-insulated electrodes forming a bottom or top electrode of the plasma processor. When the electrode array is part of the bottom electrode, the electrodes of the array are parts of a thermoelectric, Peltier effect arrangement responsive to localized temperature sensors and are parts of an electrostatic chuck. The thermoelectric arrangement controls localized temperature of workpieces and the chucking voltages indicate workpiece position relative to a workpiece holder including the electrodes. The electrodes of the arrays are coupled to circuitry for determining and/or controlling at least one localized plasma electric parameter at different locations of a workpiece and/or the plasma. The circuitry simultaneously supplies RF power having differing frequencies and/or power levels to different electrodes of the arrays and includes separate matching networks connected to the different electrodes of the array.
Description
The present invention relates generally to vacuum plasma processors and more particularly to a vacuum plasma processor including an electrode array with plural mutually-insulated electrodes forming a bottom or top electrode of the plasma processor.
Another aspect of the invention relates to a vacuum plasma processor including a thermoelectric, Peltier effect arrangement for localized temperature control of workpieces.
An additional aspect of the invention relates to a vacuum plasma processor including a sensor arrangement and method for determining at least one localized processing parameter at different locations of a workpiece and/or plasma.
A further aspect of the invention relates to a vacuum plasma processor for controlling at least one localized electric parameter of a plasma processing workpiece.
Still another aspect of the invention relates to a vacuum plasma processor with control of at least one localized electric parameter of plasma coupled to different locations of a workpiece.
An added aspect of the invention relates to a plasma processor with sensing of workpiece position relative to a chucking electrode array with plural mutually insulated electrodes.
FIGS. 1 and 2 are schematic diagrams of two types of prior art vacuum plasma processors. The workpiece processor illustrated in FIG. 1 includes vacuum plasma processing chamber assembly 10, a first circuit 12 for driving a reactance for exciting ionizable gas in chamber assembly 10 to a plasma state, a second circuit 14 for applying RF bias to a workpiece holder in chamber assembly 10, and a controller arrangement 16 responsive to sensors for various parameters associated with chamber assembly 10 for deriving control signals for devices affecting the plasma in chamber assembly 10. Controller 16 includes microprocessor 20 which responds to various sensors associated with chamber assembly 10, as well as circuits 12 and 14, and signals from operator input 22, which can be in the form, for example, of a keyboard. Microprocessor 20 is coupled with memory system 24 including hard disk 26, random access memory (RAM) 28 and read only memory (ROM) 30. Microprocessor 20 responds to the various signals supplied to it to drive display 32, usually a typical computer monitor.
The upper face of base 44 carries holder, i.e. chuck, 52 for workpiece 54, which is typically a circular semiconductor wafer or a rectangular dielectric plate such as used in flat panel displays. Robotic arm 53 inside chamber 40 or coupled through a suitable air lab to the chamber interior responds to position control signals microprocessor 20 derives to correctly position workpiece 54 on chuck 52 so the center of the workpiece and chuck are vertically aligned. Microprocessor 20 derives the position control signals in response to position sensors (e.g., photodetectors) for sensing the relative positions of workpiece 54 and chuck 52. Chuck 52 typically includes metal plate 56 that forms an electrode (a reactive element). Electrode 56 carries dielectric layer 58 and sits on dielectric layer 60, which is carried by the upper face of base 44. Workpiece 54 is cooled by supplying helium from a suitable source 62 to the underside of dielectric layer 58 via conduit 64 and grooves (not shown) in electrode 56 and by supplying a liquid from a suitable source (not shown) to conduits (not shown) in chuck 52. With workpiece 54 in place on dielectric layer 58, DC source 66 supplies a suitable voltage through a switch (not shown) to electrode 56 to clamp, i.e., chuck, workpiece 54 to chuck 52. Chuck 52 can be monopolar or bipolar. When chuck 52 is bipolar, and designed for use with semiconductor wafers, electrode 56 includes two or more concentric, mutually-insulated circular metal elements having differing DC voltages applied to them.
With workpiece 54 secured in place on chuck 52, one or more ionizable gases from one or more sources 68 flow into the interior of chamber 40 through conduit 70 and port 72. For convenience, port 72 is shown as being in sidewall 42 but it is to be understood that gas usually is distributed by a manifold in the top of chamber 40. For convenience, only one gas source 68 is shown in FIG. 1, but it is to be understood that usually there are several gas sources of different species, e.g. etchants, such as SF6, CH4, C12 and HBr, dilutants such as Ar or He, and O2 as a passivation gas. The interior of conduit 70 includes valve 74 and flow rate gauge 76 for respectively controlling the flow rate of gas flowing through port 72 into chamber 40 and measuring the gas flow rate through port 72. Valve 74 responds to a signal microprocessor 20 derives, while gauge 76 supplies the microprocessor with an electric signal indicative of the gas flow rate in conduit 70. Memory system 24 stores for each recipe step of each workpiece 54 processed in chamber 40 a signal indicative of desired gas flow rate in conduit 70. Microprocessor 20 responds to the signal that memory system 24 stores for desired flow rate and the monitored flow rate signal gauge 76 derives to control valve 74 accordingly.
For any particular recipe, memory system 24 stores a signal for desired output powers of amplifier 102. Memory system 24 supplies the desired output power of amplifier 102 to the amplifier by way of microprocessor 20. The output power of amplifier 102 can be controlled in an open loop manner in response to the signals stored in memory system 24 or control of the output power of amplifier 102 can be on a closed loop feedback basis. As the output power of amplifier 102 changes, the density of plasma 50 changes accordingly, as disclosed by Patrick et al., U.S. Pat. No. 6,174,450.
The output power of amplifier 102 drives coil 48 via cable 106 and matching network 108. Matching network 108, typically configured as a “T,” includes two series legs including variable capacitor 112 and fixed capacitor 116, as well as a shunt leg including variable capacitor 114. Coil 48 includes input and output terminals 122 and 124, respectively connected to one electrode of capacitor 112 and to a first electrode of series capacitor 126, having a grounded second electrode. The value of capacitor 126 is preferably selected as described in the commonly assigned, previously mentioned, Holland et al. patent.
To control motors 118 and 120 to maintain a matched condition for the impedance seen looking into the output terminals of amplifier 132 and the impedance amplifier 132 drives, microprocessor 20 responds to signals from conventional sensor arrangement 104 indicative of the impedance seen looking from cable 106 into matching network 108. Alternatively, sensors can be provided for deriving signals indicative of the power that amplifier 102 supplies to its output terminals and the power reflected by matching network 108 back to cable 106. Typically, sensor arrangement 104 includes detectors for current and voltage magnitude and for the phase angle between the current and voltage. Microprocessor 20 responds, in one of several known manners, to the sensed signals that sensor arrangement 104 derives to control motors 118 and 120 to attain the matched condition.
Alternatively, RF source 130 is a source arrangement having two or more sources, operating at different frequencies, such as 4.0 MHz, 13.56 MHz and 27.1 MHz. Source 130 simultaneously supplies these different frequencies through different power amplifiers, directional couplers, cables, sensors and matching networks to electrode 56. The lower frequencies cause ion energy in the plasma in proximity to workpiece 54 to increase, while the higher frequencies cause an increase in ion density of the plasma in proximity to workpiece 54.
For each process recipe step, memory system 24 stores set point signals for the net power coupled by directional coupler 134 to cable 136. The net power coupled by directional coupler 134 to cable 136 equals the output power of amplifier 132 minus the power reflected from the load and matching network 138 back through cable 136 to the terminals of directional coupler 134 connected to cable 136. Memory system 24 supplies the net power set point signal associated with circuit 14 to microprocessor 20. Microprocessor 20 also responds to output signals directional coupler 134 supplies to power sensor arrangement 141. Sensor arrangement 141 derives signals indicative of output power of amplifier 132 and power reflected by cable 136 back toward the output terminals of amplifier 132.
One of the elements of memory system 24, typically read-only memory 30, stores preprogrammed values for controlling the output power of amplifier 102 and/or 132 during a step of the recipe of plasma 50 processing workpiece 54. The preprogrammed values thereby control the amount of power that coil 48 and/or electrode 56 supply to the plasma 50 in chamber 40 to enable the power that coil 48 and/or electrode 56 supplies to the plasma to change as a function of time in accordance with a preprogrammed predetermined function.
A problem with the prior art processors is that ions in the plasma in proximity to workpiece 54 have differing energies and densities at different localized portions of the workpiece. In addition, there are frequently temperature variations at different localized portions of the workpiece. Consequently, when the prior art processors are used for etching purposes, different portions of workpiece 54 are etched differentially and when the processors are used for deposition purposes different amounts of materials are deposited on different portions of the workpiece. While considerable improvement has been made in reducing the differential variations of the processing at different localized portions of the workpiece, problems still remain.
I am aware that Dhindsa, U.S. Pat. No. 5,740,016, discloses an arrangement wherein a workpiece in a plasma processing chamber deals with the problem of different localized portions of the workpiece having different temperatures. The '016 patent deals with the problem by providing a plurality of thermoelectric modules of the Peltier effect type in heat transfer contact with a workpiece holder in the vacuum processing chamber. A current supply interface, connected to the plurality of thermoelectric modules, applies controlled currents to the modules to control the temperature of the workpiece holder and to provide a desired temperature distribution across the workpiece during workpiece processing. The '016 patent assumes that different portions of the workpiece always have the same relative temperature distribution. A controller stores signals indicative of the relative temperature distribution of the different workpiece portions. A single sensor for the entire workpiece temperature controls the level of the signals the controller supplies to the thermoelectric modules. Hence, if the assumption that different portions of the workpiece always have the same relative temperature distribution is not accurate for a particular situation, the approach the '016 patent discloses may not provide optimum temperature control of the workpiece.
It is, accordingly, an object of the present intention to provide a new and improved plasma processor and method of operating same.
Another object of the invention is to provide a new and improved plasma processor apparatus for and method of providing greater uniformity of ion energy and/or ion density of a plasma coupled to a workpiece being processed.
An additional object of the invention is to provide a new and improved electrode arrangement for a plasma processor which enables workpieces to be processed in such a manner that there is greater uniformity of ion energy and/or ion density of plasma coupled to a workpiece being processed.
A further object of the invention is to provide a new and improved plasma processor apparatus for and method of monitoring and controlling localized temperature dependence of a workpiece being processed.
Still an additional object of the invention is to provide a new and improved plasma processor apparatus for and method of providing greater uniformity of ion energy and/or ion density of a plasma coupled to a workpiece being processed, while providing greater temperature uniformity of the processed workpiece.
Yet a further object of the invention is to provide a new and improved electrode arrangement for a plasma processor which enables workpieces to be processed in such a manner that there is greater temperature uniformity of the processed workpiece.
Still an added object of the invention is to provide a new and improved electrode arrangement for a plasma processor, which electrode arrangement enables greater uniformity of ion energy and/or ion density of a plasma coupled to a workpiece being processed, while providing greater temperature uniformity of the processed workpiece.
An added object of the invention is to provide a new and improved plasma processor apparatus for and method of positioning a workpiece on a workpiece holder without using dedicated position transducers.
According to one aspect of the invention, a sensor arrangement detects electric properties of different localized portions of an AC plasma of a vacuum plasma processor, wherein the processor includes a reactance for exciting gas in a vacuum chamber to the AC plasma. The sensor arrangement derives signals indicative of the detected electric properties.
According to another aspect of the invention, different localized electric properties of an AC plasma of a vacuum plasma processor are controlled. The controlled electric properties are typically plasma density, plasma energy, and/or plasma impedance coupled to an electrode array. In one preferred embodiment, control of the different localized electric properties of the AC plasma is in response to signals the sensor arrangement derives indicative of the detected electric properties. In another embodiment of the invention, such control is in response to signals a memory stores, wherein the signals the memory stores were collected prior to processing of the workpiece being currently processed by the controlled plasma.
According to a further aspect of the invention, temperature properties of different localized portions of a workpiece on a workpiece holder in the chamber are controlled by sensing temperatures of different localized portions of the workpiece. The control of the temperature properties of different localized portions of the workpiece is preferably provided by separate thermoelectric devices of the Peltier effect type in response to sensed temperature at different localized regions of the workpiece.
In the preferred embodiment, arrays of mutually electrically insulated electrodes are instrumental in providing control of the plasma electric properties and/or the workpiece temperature. An array of such electrodes can be provided in the workpiece holder or as a reactance at the top of the chamber for coupling AC plasma excitation energy to gas in the chamber. When the electrodes are included in the workpiece holder, the electrodes supply AC power to the plasma and can be arranged to provide electrostatic chucking of the workpiece and/or form part of each of the thermoelectric devices, and/or part of sensors for the workpiece position relative to the workpiece holder. An AC source arrangement preferably drives each of the electrodes so that different electrodes of the arrays are supplied with AC power having differing frequencies and/or magnitudes. An impedance matching network is preferably connected between each of the electrodes and an AC source of the AC source arrangement. Reactances of the matching network are controlled in response to indications of the degree of impedance match between the AC source and the load the particular impedance matching network drives, that is, the electrode connected to the impedance matching network and the plasma load driven by that electrode. The frequency and/or magnitude of the AC power driving a particular electrode are controlled by the power in the plasma and/or the impedance loading that electrode.
The above and still further objects, features and advantages of the present invention will become apparent upon consideration of the following detailed description of specific embodiments thereof, especially when taken in conjunction with the accompanying drawings.
FIGS. 1 and 2, as previously described, are schematic diagrams of prior art plasma processors respectively including a plasma excitation coil and a top plasma excitation electrode;
FIG. 3 is a front view of one embodiment of an electrode array in accordance with a preferred embodiment of the invention, wherein the array includes three mutually insulated, concentric circular electrodes which can replace electrode 56 of FIG. 1 or electrode 55 of FIG. 2;
FIG. 4 is a partially schematic electric diagram of an arrangement for driving the array of FIG. 3 and schematically includes representations of thermoelectric devices for controlling the localized temperature of a workpiece;
FIG. 5 is a front view of a second embodiment of an electrode array in accordance with a preferred embodiment of the invention, wherein the array includes electrodes having a rectangular shape arranged as a pair of stripes extending at right angles to each other, wherein the stripes intersect at a point aligned with the center of a workpiece holder; and
FIG. 6 is a front view of a third embodiment of an electrode array in accordance with a preferred embodiment of the invention, wherein the electrodes have a rectangular shape and are arranged as a matrix of rows and columns.
Reference is now made to FIG. 3 of the drawing wherein electrode array 200 is illustrated as including mutually insulated electrodes 202, 204 and 206. Each of electrodes 202, 204 and 206 is concentric with center 208 of electrode array 200 and has a circular periphery so that electrode 202 is shaped as a circle and each of electrodes 204 and 206 is shaped as a ring. Electric insulator 210, shaped as a ring, connects the periphery of electrode 202 to the inner circumference of electrode 204, while ring shaped electric insulator 212 connects the periphery of electrode 204 to the interior circumference of electrode 206. Typically radii of electrodes 202 and 204 are respectively one third and two thirds of the radius of the exterior of electrode 206.
The circular configuration of electrode array 200 is used with chambers 40 for processing circular workpieces, such as semiconductor wafers. If chamber 40 is used for processing workpieces having a rectangular configuration, such as glass substrates for flat-panel displays, in which case the chamber has a rectangular, rather than circular, configuration, the circular shape of array 200 is replaced with an array having a rectangular shape.
When electrode array 200 is used as bottom electrode 56, the dimensions of the exterior perimeter 206 are the same as the exterior dimensions of workpiece 54 and each of electrodes 202, 204 and 206 is formed of metal, preferably copper. When workpiece 54 is correctly positioned on chuck 56, the centers of array 200 and the workpiece are aligned. Electrodes 202, 204 and 206 of bottom electrode 56 form a bipolar electrostatic chuck and thus are driven by DC voltages having sufficient magnitude to clamp workpiece 54 to workpiece holder 52. Electrodes 202, 204 and 206 of bottom electrode 56 are also driven by AC power that can have differing magnitudes and/or frequency to establish a DC bias voltage on the bottom electrode. In addition, electrodes 202, 204 and 206 of bottom electrode 56 can be part of thermoelectric devices of the Peltier effect type. In such a case, each of the electrodes 202, 204 and 206 includes at least one radially extending slit (not shown) so that opposite parallel, elongated edges of each slit are electrically insulated from each other for DC purposes. The portion of each of electrodes 202, 204 and 206 at the edge of each slit carries a semiconductor, such as bismuth telluride, that exhibits thermoelectric properties when connected to the metal forming the electrodes.
Reference is now made to FIG. 4 of the drawing, a schematic diagram of circuitry for driving electrodes 202, 204 and 206 when array 200 is included in chuck 52. To facilitate the presentation, electrodes 202, 204 and 206 are illustrated in FIG. 4 as rectangular plates, but is to be understood that the electrodes are configured as discussed above in connection with FIG. 3. To provide consistency with FIG. 1, electrodes 202, 204 and 206 are immediately below electric insulating plate 58, which has a sufficiently high thermal conductivity so there is a substantially constant temperature across the plate, which is preferably made of mica to achieve this result. Electrodes 202, 204 and 206 electrostatically clamp workpiece 54 in place on the upper surface of insulating plate 58 by virtue of DC power supplies 214 and 216 being connected so that the negative and positive electrodes of power supply 214 are respectively connected to electrodes 202 and 204, while the negative and positive electrodes of power supply 216 are respectively connected to electrodes 204 and 206. DC voltmeters 217 and 219 are connected between electrodes 202, 204 and 206, such that voltmeter 217 is connected between electrodes 202 and 204 while voltmeter 219 is connected between electrodes 206 and 208. Voltmeters 217 and 219 effectively monitor the electrostatic clamping forces electrodes 202, 204 and 206 apply to the regions of workpiece 54 respectively above the electrodes. Because of the symmetrical nature of chamber 40, chuck 52 and workpiece 54, differences in the voltages that meters 217 and 219 detect indicate the relative position of workpiece 54 relative to electrodes 202, 204 and 206. Meters 217 and 219 supply to microprocessor 20 signals indicative of the voltages the meters detect. Microprocessor 20 responds to these voltages to derive signals indicative of the workpiece position relative to workpiece holder (i.e., chuck) 52.
Each of temperature controllers 220, 222 and 224 includes a DC power supply 230 and a DC voltage controller 232 which responds to a temperature indicating voltage that temperature sensor 234 derives. Temperature sensor 234 responds to the localized temperature of the portion of workpiece 54 directly above the electrode 202, 204 or 206 with which the temperature controller including the particular temperature sensor is associated. Temperature sensor 234 can be a heat responsive element embedded in insulator plate 58 or can include a fiber optic element having one end embedded in plate 58, in combination with a thermal radiation responsive element coupled to the other end of the fiber optic element.
If the control function is included in microprocessor 20, the signals that temperature sensors 234 derive are supplied to the microprocessor. In such a case, microprocessor 20 controls the voltages DC power supplies 230 supply to semiconductor structures 226 and 228. The microprocessor responds to the signals from the temperature sensors 234 of thermoelectric controllers 220, 222 and 224 and can combine them to obtain an average value of the temperature of workpiece 54 at the three localized portions of the workpiece which are monitored by the temperature sensors. The microprocessor responds to the average temperature value and the temperature values indicated by the sensors associated with each of thermoelectric controllers 220, 222 and 224 to control the magnitude and polarity of the DC voltage that voltage controllers 232 supply to the semiconductor structures 226 and 228 of the individual thermoelectric devices.
The remaining circuitry illustrated in FIG. 4 is concerned with maintaining the plasma processing of workpiece 54 substantially uniform over the entire area of the workpiece. To this end, the remaining circuitry illustrated in FIG. 4, in combination with the processing by microprocessor 20 and signals stored in memory system 24, effectively controls the electric properties of plasma 50 in proximity to the localized portions of workpiece 54 respectively above electrodes 202, 204 and 206 when array 200 is part of chuck 52. The remaining circuitry illustrated in FIG. 4 can also be used to drive electrode array 200 when array 200 replaces top electrode 55, FIG. 2. In such a situation, the remaining circuitry illustrated in FIG. 4 provides localized control for different portions of plasma 50 in proximity to the localized portions of top electrode 55, respectively below electrodes 202, 204 and 206.
The remaining circuitry illustrated in FIG. 4 includes an AC source arrangement 240 including two or more RF sources, in particular 4.0 MHz source 242, 13.56 MHz source 244 and 27.1 MHz source 246. Outputs of sources 242, 244 and 246 drive switch array 248 having control input signals which microprocessor 20 derives. The control signals from microprocessor 20 activate switch array 248 so that the outputs of sources 242, 244 and 246 are selectively applied to networks which ultimately drive electrodes 202, 204 and 206. Microprocessor 20 responds to signals indicative of the plasma impedance and plasma power separately loading each of electrodes 202, 204 and 206 to determine the density and energy in the ions of the plasma load separately coupled to each of the electrodes. Alternatively, ROM 30 and/or hard disk 26 of memory system 24 store (1) signals representing the impedance separately loading each of electrodes 202, 204 and 206 for the particular recipe step being performed by plasma 50 on workpiece 54 or (2) signals representing desired energy of different localized regions of the plasma. In both cases, microprocessor 20 responds to the stored signals to control the desired density and energy in the ions of the plasma load separately coupled to each of electrodes 202, 204 and 206.
If plasma in different portions of chamber 40 has a tendency to have different energies and it is desired for the plasma coupled to different portions of workpiece 54 to have substantially the same energy, microprocessor 20 controls switch array 248 to achieve such a result. If, on the other hand, it is desired for the plasma coupled to different portions of workpiece 54 to have substantially different energies, microprocessor 20 controls switch array 248 to achieve that result.
Plasma energy in different localized portions of the plasma can also be controlled by varying the RF power applied to each of the electrodes of array 200. To this end, the three output leads of switch array 248 which supply RF to electrodes 202, 204 and 206 drive variable power gain amplifiers 250, 252 and 254, respectively. Microprocessor 20 controls the gains of power amplifiers 250, 252 and 254 in response to signals ROM 30 or hard disk 26 of memory system 24 supplies to the microprocessor or in response to signals supplied to the microprocessor indicative of the power in the plasma respectively loading electrodes 202, 204 and 206. Microprocessor 20 integrates over time the power representing signals associated with each of electrodes 202, 204 and 206 to provide measures of the energies in the plasma separately loading each of the separate electrodes.
where:
|V|=magnitude of sensed voltage,
|I|=magnitude of sensed current, and
ø=the phase angle between the sensed voltage and current.
where:
T1 and T2 are the boundaries of each integration period.
The output of matching network 264 drives electrode 202 by way of blocking capacitor 271. Capacitor 271 prevents the DC voltage of chucking power supplies 214 and 216, as well as the DC voltages of supplies 230 of thermoelectric controllers 220, 222 and 224 from being coupled to matching network 264.
FIG. 5 is a top view of electrode array 300, a second preferred embodiment of an electrode array in accordance with the present invention. The specific, illustrated embodiment of electrode array 300 is for use in connection with circular workpieces, but it is to be understood that similar principles can be employed with rectangular workpieces.
Each of the electrodes of stripes 302 and 304 is connected by way of a network similar to networks 256, 258 and 260 to an AC source arrangement similar to source arrangement 240, to a switch array similar to switch array 248, and to a separate power amplifier similar to power amplifiers 250, 252 and 254. In addition, each of the electrodes of stripes 302 and 304 is preferably associated with a temperature sensor similar to temperature sensors 234 and a thermoelectric temperature controller similar to thermoelectric temperature controllers 220, 222 and 224. Because of the small area of the electrodes of stripes 302 and 304 relative to the electrodes of array 200, array 300 can provide much more accurate control of the plasma energy and density coupled to workpiece 54, and of the workpiece temperature, than is attained by array 200.
While there have been described and illustrated specific embodiments of the invention, it will be clear that variations in the details of the embodiments specifically illustrated and described may be made without departing from the true spirit and scope of the invention as defined in the appended claims. For example, because of the symmetrical nature of chamber 40 and the plasma in chamber 40, it can usually be assumed that the plasma coupled to one quadrant of workpiece 54 is similar to the plasma coupled to the remaining quadrants of the workpieces. Consequently, once microprocessor 20 determines the correct information for driving sector 331, FIG. 5, the same information can be used for driving sectors 332, 333 and 334. Because of the detailed information obtained during the processing of the workpieces, particularly with electrode arrays 300 or 400, the necessity to over etch to clear stringers from a slow etch area of the workpieces is obviated; stringer is a term of art frequently used to designate a very narrow line that was not properly etched.
Claims (4)
1. A vacuum plasma processor for processing a workpiece comprising a vacuum chamber having a gas inlet port, a vacuum port, a workpiece holder, a reactance for exciting gas in the chamber to an AC plasma, and a controller arrangement for controlling temperature properties of different localized portions of a workpiece on the holder, the controller arrangement including a temperature sensor for different localized portions of the workpiece on the holder, the controller including a plurality of thermoelectric devices associated with the different localized portions of the workpiece on the holder, each thermoelectric device including a pair of first and second semiconductor structures, a DC voltage source connected between the first and second semiconductor structures; the electrodes, semiconductor structures and DC voltage source being arranged to cause the first structure to supply heat to the first segment for a first polarity of the voltage and the second structure to remove heat from the second segment for a second polarity of the voltage.
2. A vacuum plasma processor for processing a workpiece comprising a vacuum chamber having a gas inlet port, a vacuum port, a workpiece holder, a reactance for exciting gas in the chamber to plasma, an array of mutually electrically insulated rectangular electrodes for supplying electric fields to the plasma, an AC source arrangement, the electrodes being arranged in a pair of stripes extending at right angles to each other, the stripes intersecting at a region aligned with the center of the workpiece holder, and circuitry for causing differential power to be applied by the AC source arrangement to separate electrodes of the array.
3. The vacuum plasma processor of claim 2 wherein the stripes are included in a matrix of rows and columns.
4. The vacuum plasma processor of claim 3 wherein the workpiece, when processed, includes plural dies, the electrodes being arranged to be aligned with the plural dies of the workpiece when the workpiece is properly positioned on the workpiece holder.
Priority Applications (6)
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US09/821,026 US6741446B2 (en) | 2001-03-30 | 2001-03-30 | Vacuum plasma processor and method of operating same |
CNB028096541A CN100431129C (en) | 2001-03-30 | 2002-03-29 | Vacuum plasma processor and method of operating same |
TW091106387A TW554646B (en) | 2001-03-30 | 2002-03-29 | Vacuum plasma processor and method of operating same |
AU2002306930A AU2002306930A1 (en) | 2001-03-30 | 2002-03-29 | Plasma processor and method for operating same |
PCT/US2002/009585 WO2002080265A2 (en) | 2001-03-30 | 2002-03-29 | Plasma processor and method for operating same |
US10/832,286 US7206184B2 (en) | 2001-03-30 | 2004-04-27 | Vacuum plasma processor and method of operating same |
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US09/821,026 US6741446B2 (en) | 2001-03-30 | 2001-03-30 | Vacuum plasma processor and method of operating same |
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US10/832,286 Continuation US7206184B2 (en) | 2001-03-30 | 2004-04-27 | Vacuum plasma processor and method of operating same |
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US6741446B2 true US6741446B2 (en) | 2004-05-25 |
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US10/832,286 Expired - Lifetime US7206184B2 (en) | 2001-03-30 | 2004-04-27 | Vacuum plasma processor and method of operating same |
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CN (1) | CN100431129C (en) |
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Also Published As
Publication number | Publication date |
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TW554646B (en) | 2003-09-21 |
US20020159216A1 (en) | 2002-10-31 |
WO2002080265A3 (en) | 2003-03-27 |
AU2002306930A1 (en) | 2002-10-15 |
CN100431129C (en) | 2008-11-05 |
US20040252439A1 (en) | 2004-12-16 |
CN1608317A (en) | 2005-04-20 |
WO2002080265A2 (en) | 2002-10-10 |
WO2002080265B1 (en) | 2004-07-01 |
US7206184B2 (en) | 2007-04-17 |
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