US6207936B1  Modelbased predictive control of thermal processing  Google Patents
Modelbased predictive control of thermal processing Download PDFInfo
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 US6207936B1 US6207936B1 US08791134 US79113497A US6207936B1 US 6207936 B1 US6207936 B1 US 6207936B1 US 08791134 US08791134 US 08791134 US 79113497 A US79113497 A US 79113497A US 6207936 B1 US6207936 B1 US 6207936B1
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 G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
 G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
 G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
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 G—PHYSICS
 G05—CONTROLLING; REGULATING
 G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
 G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
 G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
 G05B13/0265—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric the criterion being a learning criterion
 G05B13/027—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric the criterion being a learning criterion using neural networks only
Abstract
Description
This application is a continuationinpart of U.S. patent application Ser. No. 08/597,438 now abandoned, filed on Jan. 31, 1996, assigned to the same assignee of this application.
1. Field of the Invention
The invention relates to automatic feedback control of thermal processing. In particular, the invention pertains to modelbased predictive temperature control of thermal process reactors such as used in semiconductor processing.
2. Description of the Related Art
Until recently, most of the high temperature processing necessary for integrated circuit fabrication was performed in hotwall, resistanceheated batch reactors. Controlling the wafer temperature uniformity (withinwafer, pointtopoint) in these reactors was generally not considered an issue, because the reactors were substantially isothermal. The downboat (wafertowafer) temperature uniformity could be controlled effectively by dividing the cylindrical heating coil into several zones, each with its own temperature sensor controller and power supply. The outer zones were typically adjusted to compensate for heat losses at the furnace ends. Independent, singleloop, offtheshelf PID controllers suffice for these purposes. The trend to larger wafer diameters, the demanding uniformity requirements for ULSI applications, and the demands for reduced thermal budget all led to an increased use of singlewafer process reactors. For commercially feasible throughput, it is highly desirable to minimize the process cycle time by heating substantially only the wafer and its immediate environment. In many cases, singlewafer reactors are of the coldwall or warmwall type, in which quartz or stainless steel process chambers are water or air cooled. Under such circumstances, the system is no longer isothermal and temperature uniformity control becomes an issue of considerable concern and technical difficulty. A recent technical review of the field is provided in “Rapid Thermal Processing Systems: A Review with Emphasis on Temperature Control,” F. Roozeboorn N. Parekh, J. Voc. Sci. Technol. B 8(6), 12491259, 1990.
Specific physical process characteristics serve to exemplify the need for precise temperature uniformity. Homoepitaxial deposition of silicon should be performed in a manner which minimizes crystalline growth defects, such as lattice slip. Such defects are induced by thermal rents in the wafer during high temperature processing, becoming more sensitive to gradients as temperature increases. For example, while gradients of about 100° C. across an 8inch wafer may be tolerable at a process temperature of 900° C., respective gradients of only 23° C. are allowable at process temperatures of 1100° C. There is some experimental evidence to indicate that gradients of approximately 10° C. may be tolerable for a few seconds. The deposition of polycrystalline silicon (polysilicon) typically takes place at 600700° C. where as a rule of thumb a 2% uniformity degradation is incurred for every degree of temperature gradient. Moreover, in heterodeposition processes such as polysilicon deposition, multiple reflections and optical interference within the deposited overlayers can give rise to emissive or absorptive changes with overlayer thickness, exacerbating the problem of maintaining temperature uniformity (J. C. Liao, T. I. Kamins, “Power Absorption During Polysilicon Deposition in a LampHeated CVD Reactor, J. Appld. Phys., 67(8), 38483852 (1990)). Furthermore, patterned layers can also lead to variations in light absorption across the wafer, creating local temperature gradients. (P. Vandenabeele, K Maex, “Temperature NonUniformities During Rapid Thermal Processing of Patterned Wafers,” Rapid Thermal Processing SPIE, Vol. 1189, pp. 84103, 1989).
The aforementioned actors complicating the control system design are not only manifest for rapid thermal chemical vapor deposition (RTCVD) systems, but apply to thermal processing (UP) systems in general, where the need for precise process control is balanced by the demand for minimal process cycle times. The generally short process cycle times and fast dynamics of the singlewafer systems render dynamic control of temperature uniformity a necessity of considerable technical difficulty. The radiant heating systems used for rapid wafer heating comprise either arc lamps or banks of linear tungstenhalogen lamps divided into several independentlycontrollable heating zones. The wafer itself, in principle, represents a complex thermal system whose interaction with the radiant energy is inherently nonlinear. Furthermore, since the requirements for power distribution over the wafer are different for dynamic compared to steadystate uniformity, it does not suffice to deduce the required power settings from a wafer temperature measurement at a single point. In general, multiple sensors are required to measure and maintain a uniform temperature distribution over the wafer. These considerations render temperature control an essentially multiinput, multioutput (MIMO) or multivariable problem. Due to the large interaction between zones inherently present in radially heated systems, the conventional control techniques, for example, using singleloop, coupled or masterslave type PID control, cannot be expected to provide thermal process reactor systems with the required control specifications for all operating conditions. Conventional PID control techniques are susceptible to lag, overshoot and instability at the desirable process rates, and therefore become limiting factors in singlewafer process reactors. Thus, there is a clear need in electronic materials processing for systems which can maintain precise, dynamic multivariant control while providing commercially viable wafer throughput
The foregoing discussion has clearly outlined the need for effective uniformity control in thermal process reactors using a multivariable approach. This view is endorsed by many authors. See, for instance, several contributions in the Rapid Thermal and Integrated Processing Symposium. ed. J. C. Gelpey, et al., Mater. Res. Soc. Symp. Proc., Vol. 224, 1991. In particular, articles by Moslehi et al. (pp. 143156), Apte, et al. p. 209214), and Norman et a. (pp. 177183), discuss various aspects of multivariable temperature control. Several attempts to develop models for RTP and RTCVD systems are reported in the literature. Two examples, Norman and Gyurcsik, et al., developed different models, both using a firstprinciples approach, and applied the models to uniformity optimization (S. A. Norman, “Optimization of Wafer Temperature Uniformity in Rapid Thermal Processing Systems,” ISL Tech Rep. No. 91SAN1, Subm. to IEEE Trous. on Electron Devices, 1991; R. S. Gyurcsik, T. J. Riley, R. Y. Sorrel, “A Model for Rapid Thermal Processing: Achieving Uniformity Through Lamp Control,” IEEE Trans. on Semicon. Manf., Vol. 4(1), 1991). The model of Norman (1991) consists of two components. The first component models the (twodimensional) heat balance of the wafer and is used to compute the steadystate wafer temperature profile for a given heat flux from the lamps. The second component models the heat flux from the lamps as a function of the individual lamp powers. A leastsquares method is used to fit a quadratic relationship between the desired temperature at discrete radial positions on the wafer and the flux density due to the lamps. Next, the lamp model is used to determine optimal relative power settings for the lamps that approximate the required flux. This method only applies to the uniformity control in steadystate, i.e., constant input However, Norman, et al. (1991), consider not only the steadystate optimization problem, but also the problem of designing an optimal trajectory. For this purpose the dynamic model is a finitedifference approximation to the onedimensional heat equation, including the effects of conduction in the wafer, convective heat loss from the wafer, and radiative transfer. A minimax solution is chosen for the steadystate uniformity optimization and trajectory following.
Dynamic system modeling is an essential ingredient of predictive control laws, which provide the fundamental structure for a unique class of contemporary control algorithms. In essence, system or plant control strategies are based on predicted future plant behavior predicated on a suitably accurate dynamic plant model. The future control strategies are not static and do not extend arbitrarily to future time slots; but rather are periodically updated in accordance with the plant model in a socalled receding horizon fashion. For a number of years, predictive control has been the subject of extensive research and development Indeed, predictive control is the central theme behind the benchmark works of Cutler and Ramaker in their Dynamic Matrix Control (DMC) algorithm (C. Cutler, B. L. Ramaker, “Dynamic Matrix Control—A Computer Control Algorithm,” Joint Automatic Controls Conference Proceedings, San Francisco, 1980) and Richalet, et al., in their Model Algorithmic Control (MAC) algorithm (J. A. Richalet, A. Rault J. D. Testud, J. Papon, “Model Predictive Heuristic Control: Application to Industrial Processes,” Automatic Vol. 14, No. 413, 1978). Further predictive and adaptive characteristics are incorporated by R. M. C. de Keyser, et al., “SelfTuning Predictive Control,” Journal A. Vol. 22, No. 4, pp. 167174, 1981; and more recently by Clarke, et al., in their Generalized Predictive Control (GPC) algorithm (D. W. Clarke, C. Mohtadi, P. S. Tuffs, “Generalized Predictive Control. Part I: The Basic Algorithm,” Automatica, Vol. 23, No. 2, pp. 137148, 1987). Much of the contemporary control work in the literature is to some extent based on these approaches.
In DMC and other similar approaches, plant models are identified and cast in the form of deterministic impulseresponse or stepresponse models. While these model forms are wellunderstood, they are often computationally cumbersome and present significant compromises between accuracy and response for longrange model predictions. Further, DMC appears to be incapable of handling nonminimum phase and openloop unstable plants. A significant redeeming feature of DMC is that of the receding horizon, after which control increments are assumed to be zero. This advantageous assumption is incorporated in GPC, which in various derivations also utilizes extensions of AutoRegressive Moving Average (ARMA) plant models such as CARMA or CARIMA (Controlled AutoRegressive Moving Average, CARIntegratedMA). The ARMA plant models are generally represented by expressions involving polynomials A, B and C of the timeshift operator q^{−1}. The shift operator q^{−1 }acts on a function of a discrete time variable f(t), such that q^{−1}f(t)=f(t−1) and in general q^{−u }f(t)=f(t−u). The model polynomials A, B and C act on process inputs u(t), process outputs y(t) and process disturbances e(t) such that:
Such models represent both the plant dynamics via the polynomials A,B and the disturbance via A,C. A particular advantage is that the number of parameters in the model is minimal so that they can be estimated with high efficiency. As outlined by Clarke, et al., the longrange plant predictions are best accomplished by recursion of an associated Diophantine equation involving the model parameters. A similar ARMA model and recursive model prediction is also found in U.S. Pat. No. 5,301,101 by MacArthur, et al., which discloses an adaptive receding horizonbased controller incorporating means for operating cost minimization.
Nevertheless, in spite of the recent effort to develop new, useful multivariant control techniques, until now there has been little success in applying them to the demanding conditions imposed by commercial thermal process reactors. The only apparent successes to date has involved the use of physical models rather than the black box models employed herein (see e.g. Cole Porter et. al., “Improving Furnaces with ModelBased Temperature Control”, Solid State Technology November 1996, page 119).
It is an object of the present invention to provide a method and apparatus for a more effective temperature control system in multivariant thermal processes.
In accordance with one aspect of the present invention, a temperature controlled thermal process reactor comprises a chamber within which a thermal process is executed, a source of thermal energy, a thermal sensor, and a modelbased predictive temperature controller One preferred embodiment of the temperature controlled thermal process (TP) reactor comprises a multivariable temperature controlling arrangement. The temperature controller preferably comprises a multivariable thermal process model that relates multivariable process input thermal energy to multivariable process output temperature. The temperature controller also preferably comprises a prediction calculator that uses the process model to calculate a predicted temperature output over a predetermined future time period or prediction horizon. The preferred temperature controller additionally comprises a control calculator that uses the predicted temperature output to calculate an optimum control strategy by which to control the source of thermal energy. The control calculator preferably calculates an optimum future control strategy by comparing the predicted process output variables to a set of desired future process output variables.
In accordance with another aspect of the present invention, a temperature control system for controlling a thermal process comprises a controllable source of thermal energy, a temperature sensor, and a modelbased predictive temperature controller. The modelbased predictive temperature controller comprises a thermal process model that relates process input thermal energy to process output temperature and a prediction calculator that uses the thermal process model to calculate a predicted nominal temperature output over a predetermined future time period. The temperature controller further comprises a control calculator that uses the predicted nominal temperature output to calculate an optimum strategy by which to control the source of thermal energy. Preferably, the control calculator compares the predicted temperature output to the desired temperature output to derive the optimum control strategy. In a preferred temperature control system, the prediction calculator periodically updates the predictions in accordance with an autoregressive moving average calculator. In a preferred arrangement, predictions are executed over a predetermined future time period, which is updated in accordance with the autoregressive moving average.
In still another aspect of the present invention, a method of controlling a thermal process comprises the steps of measuring a process output temperature and using this information in predicting a future process output temperature. The method further comprises calculating an optimum process input control strategy and controlling a process input thermal energy using the calculated optimum process input control strategy. In a preferred embodiment of the method, predicting a future process output temperature comprises identifying a thermal process model relating process input thermal energy to process output temperature. The preferred method of prediction further comprises recursive application of the thermal process model over a predetermined future time period, or prediction horizon. The predictions are furthermore periodically updated in accordance with an autoregressive moving average calculator. Another preferred method of rapid thermal process control comprises calculating an optimum process input control strategy by comparing the predicted future process output temperature to a desired future process output temperature.
In accordance with another aspect of the present invention, a temperature control system for controlling a thermal process comprises a controllable source of thermal energy, a temperature sensor, and a nonlinear, modelbased predictive temperature controller. The modelbased predictive temperature controller comprises a nonlinear thermal process model that relates process input thermal energy to process output temperature and a prediction calculator that uses the thermal process model to calculate a predicted nominal temperature output over a predetermined future time period The nonlinear model further comprises a neural network In a particularly preferred embodiment, the neural network comprises hidden neurons that are of the sigmoid type.
In accordance with yet another aspect of the present invention, a temperature control system for controlling a thermal process comprises a controllable source of thermal energy, a temperature sensor, a modelbased predictive temperature controller, and a softsensor model that relates susceptor temperatures to wafer temperatures. The softsensor model provides an estimate of the unmeasurable wafer surface temperatures. In a preferred embodiment, the softsensor model is an FIR model. The model coefficients for the softsensor FIR filter are obtained through the use of an instrumented wafer.
In accordance with yet another aspect of the present invention, a temperature control system for controlling a thermal process comprises a controllable source of thermal energy, a temperature sensor, a modelbased predictive temperature controller, a softsensor model that relates susceptor temperatures to wafer temperatures and a setpoint generator that uses the output of the softsensor model, and the recipe to adjust the setpoints so that the wafer surface tics will be closer to the values specified in the recipe.
The modelbased predictive temperature controller comprises a nonlinear thermal process model that relates process input thermal energy to process output temperature and a prediction calculator that uses the thermal process model to calculate a predicted nominal temperature output over a predetermined future time period. The nonlinear model further comprises a neural network. In a particularly preferred embodiment, the neural network comprises hidden neurons that are of the sigmoid type.
FIG. 1 is a schematic perspective view of a singlewafer rapid thermal chemical vapor deposition reactor.
FIG. 2 is a schematic diagram of a prior art temperature control system used in singlewafer reactors.
FIG. 3 shows representative data characterizing the tracking and response of a prior art multivariable temperature control system.
FIG. 4 is a basic block diagram of a modelbased multivariable temperature control system.
FIG. 5 is a block diagram of a multivariable modelbased predictive temperature control system.
FIG. 6 is a flow chart representing a preferred predictor and controller algorithm.
FIG. 7 is a system diagram of a preferred multivariable modelbased predictive temperature control system.
FIGS. 8A and 8B illustrate an exemplary input/output identification data set for the center zone, showing system stimuli (B) and response (A).
FIG. 9 illustrates an exemplary system output simulation using system input data for the center zone.
FIG. 10 illustrates an exemplary residual correlation for the system center zone input/output data set.
FIG. 11 illustrates an exemplary model prediction data set compared to system output data
FIG. 12A illustrates an exemplary command sequence and output response for each reactor zone.
FIG. 12B illustrates an exemplary input response to the command sequence of FIG. 12A.
FIG. 13A illustrates exemplary data characterizing the tracking and response to each system output variable.
FIG. 13B illustrates exemplary data characterizing the tracking and response of each system input variable to the command sequence of FIG. 13A.
FIG. 14A is a block diagram that illustrates an overview of a fabrication system.
FIG. 14B is a block diagram that illustrates, in greater detail than FIG. 14A, the various hardware, software, and conceptual components of a fabrication system comprising a nonlinear, neural network based controller.
FIG. 15 illustrates a block diagram of the nonlinear process model.
FIG. 16 illustrates a typical typical neural network.
FIG. 17A is a block diagram of the parallel model network.
FIG. 17B is a block diagram of the seriesparallel model network.
FIG. 18 is a flowchart that illustrates the process for computing a new set of predictions for n(t+kt), u(t+kt), and y(t+k″T) at each timestep t.
FIG. 19 illustrates a simple neural network having one hidden neuron.
FIG. 20 illustrates the waveforms in the single input, single output (SISO) controller.
FIG. 21 is a flowchart illustrating the steps necessary to compute the step responses in the MIMO predictor.
FIG. 22 illustrates the sigmoid function used in the neural network of FIG. 16.
FIG. 23 (comprising FIGS. 23A and 23B) is a flowchart illustrating the pseudo least squares GELS) procedure.
FIG. 24 is a block diagram that illustrates an extension of the basic fabrication system to a softsensor fabrication system.
The modelbased predictive control system of the present invention is herein illustrated in the context of rapid thermal processing (RTP) systems, and in particular a rapid thermal chemical vapor deposition (RTCVD) system, which itself makes advantageous use of the superior degree of temperature uniformity provided by the present invention. In the description and drawings, the apparatus is shown in generally schematic fashion, and only those portions necessary to illustrate the inventive concepts disclosed herein have been included. In particular, it is to be understood that the apparatus is intended to be enclosed within and supported by a surrounding enclosure (not shown) in and on which necessary gaseous reactant flow controls, process controls, instrumentation, and other attendant mechanisms are intended to be housed and mounted.
The RTCVD system 30 illustrated in FIG. 1 comprises a reaction chamber 30 of the horizontal flow type formed of a material transparent to radiant heat energy, such as fused quartz. The reaction chamber 30 may comprises a tubular shaft having a crosssection defining a reactant gas flow passage 28. The substrate or wafer 22 may be supported in the center of reaction chamber 30 by a circular, slablike susceptor 24 held in place by a rotatable driveshaft assembly 26 extending out of the reaction chamber 30. The susceptor 24 is generally fabricated from a material which is opaque to the radiant heat energy supplied from the radiant heat source, and is preferably thermally conductive. For example, the susceptor 24 may be fabricated from a material such as graphite. A plurality of thermocouples 44, 46, 48, 50 are imbedded in the susceptor 24 for determining the local substrate temperature at predetermined positions on the substrate 22, shown here at respective wafer locations center 44, front 46, side 48, and rear 50. The thermocouple signals are supplied to the temperature controller discussed below.
The radiant heating systems used for rapid wafer heating in general comprise either arc lamps or banks of elongated tungstenhalogen lamps divided into several independentlycontrollable heating zones. The radiant heat source shown in FIG. 1 comprises two banks of highpower elongated tungstenhalogen lamps located above and below the reaction chamber 30. The upper bank of lamps is oriented parallel to the process gas flow 28 and the plurality of upper bank lamps are divided into portions comprising a center zone 34 and two side zones 40, corresponding to their relative proximity with respect to the wafer 22 and gas flow 28. Analogously, the lower bank of lamps is oriented orthogonal to the process gas flow 28, and the plurality of lower bank lamps are divided into portions comprising a center zone 32, a front zone 38 and a rear zone 36, corresponding to their relative proximity with respect to the wafer 22 and gas flow 28. The electrical power supplied to the lamps by lamp drivers (discussed below) is typically controlled by a plurality of SC power packs (discussed below) configured to control the duty cycle or phase angle over which the electrical power is supplied to combinations of lamps affecting specific heating zones. The SCR firing phase angle is preferably adjusted to render a linearized power input to the lamps as done, for example, in socalled V^{2 }or V*I modes of operation.
In operation, the substrate 22 is placed into the reaction chamber 30 and onto the susceptor 24 at the beginning of a process cycle. A reactant gas flows through the reaction chamber 30 in the direction indicated by the gas flow arrow 28 to deposit materials on the substrate 22. During a process cycle, a desired sequence of thermal process steps proceeds in concert with the reactive gas processing. The thermal processing sequence is performed by adjusting the power level of the lamps to achieve a desired wafer temperature at a specific time in the process cycle. The radiant heat energy supplied to various heating zones is controlled on the basis of temperature measurements within the respective heating zones, which information is supplied to the temperature control system discussed below. The substrate 22 is removed from the reaction chamber 30 upon completion of the process cycle.
As discussed earlier, the coldwall and warmwall reaction chambers such as that shown in FIG. 1 are inherently nonisothermal. Thus, achieving a uniform temperature distribution is complicated by nonuniform heat flow, wafer geometry and attendant optical properties. The position, orientation and power level of lamps shown in FIG. 1 are in principle configured to provide a uniform temperature distribution over the wafer 22 by supplying an appropriate spatial and temporal distribution of heat energy. The plurality of lamps comprising different zones, for example, the side zones 40, as well as those of front and back zones 38 and 36, are supplied with varying electrical power levels comprising the multivariable control inputs. These control inputs produce varying radiant power levels in different heating zones to affect the temperature distribution over the substrate 22 during wafer processing. The various lamp operating powers are adjusted by a temperature controller operating on the basis of realtime temperature feedback provided by thermocouples 44, 46, 48 and 50 comprising the multivariable control output. The action of the temperature control system preferably compensates the aforementioned nonuniform thermal characteristics of the wafer 22 and the reactor 20 to affect a uniform wafer temperature distribution.
As shown in FIG. 2, an exemplary prior art multivariable temperature control system for an RTCVD reactor may comprise a plurality of ProportionalIntegralDifferential (PID) controllers wellknown in the art, and configured in a socalled masterslave arrangement. A top view of the wafer 22 shows the relative positions of the lamp heating zones 32, 34, 36, 38, 40 and 42 and the sensing thermocouples 44, 46, 48 and 50 with respect to the wafer 22 and the gas flow vector 28, as previously described. The temperature sensors 44, 46,48 and 50 are connected to supply respective PID controllers 64, 66, 68, and 70 with signals indicative of the local wafer 22 temperature. The PID controllers 64, 66, 68 and 70 are also connected to sources of reference signals, which supply each PID controller with a respective temperature reference signal or setpoint In the socalled masterslave arrangement shown here, a process controller 62 is connected to supply the center PID controller 64 with the global or master setpoint information, while the PID controllers 66, 68 and 70 are connected and referenced to the center temperature sensor 44 of the wafer 22. The output signals of the PID controllers 64, 66, 68 and 70 are in turn connected to respective sets of Silicon Controlled Rectifier (SCR) power packs 84, 86, 88 and 80, which control the lamp electrical power for respective heating zones 32/34, 36, 40/42 and 38.
In general, the PID controllers shown in FIG. 2 operate to minimize the error signals which are the differences between the respective reference temperatures and the respective measured temperatures by a negative feedback adjustment of the respective lamp powers. The feedback signal produced by a particular PID controller is determined by the response characteristics of the controller and reactor, and, as such, generally represent a considerable challenge to optimize. Several measures may be employed to characterize the dynamic system response, such as speed of response, accuracy, relative stability and sensitivity. For example, such a controller will provide a feedback signal consisting of three terms, a first term proportional to the error signal, a second term proportional to the timeintegral of the error signal and a third term proportional to the timederivative of the error signal. All three proportionality constants require adjustment. Under static or steady state conditions, it would be expected that the center PID controller 64 maintain the center wafer temperature at a predetermined reference value, and the slave PID controllers 66, 68, 70 maintain the peripheral zones at the center zone temperature. As shown in FIG. 3, the curve 90 depicts a step in the setpoint wafer temperature, and the curve 92 represents the time response of the center zone 44 to that step, indicating a stable steadystate center zone temperature after a sufficiently long settling time period. A peripheral zone time response is represented by the curve 94, which also displays stable steadystate behavior at long times. However, even an optimally adjusted PRD controller system is limited by inherent time delays, characteristic response times and overshoot, as indicated by the transient time response of the curve 92. Moreover, since the heating zones are strongly coupled, a change in one zone will influence the transient control of other zones, at least temporarily inducing temperature gradients as shown by the curve 96. Coupled PID systems, such as shown in FIG. 2, exacerbate the response challenge and are commonly detuned to avoid instability at a sacrifice to wafer throughput.
As shown in the basic block diagram of FIG. 4, a thermal process reactor incorporating a preferred embodiment of the modelbased predictive control system of the present invention utilizes heat zone temperature sensors 44, 46, 48, 50 as the multivariable control inputs. The temperature sensors provide a modelbased predictive controller 100 with information about the state of the system, namely the zone temperatures of the substrate 22. Based on this information the modelbased predictive controller 100 computes an optimum sequence of future control strategy comprising electrical power inputs to the separate heat zone lamps 32, 34, 36, 38, and 40. The process controller 62 is connected to the model based predictive control system 100 and provides it with the desired process temperature sequence.
The multivariable control techniques disclosed herein exhibit improved control performance in comparison to conventional PIDtype controllers because they contain more information about the system dynamics. This information is utilized in an Auto Regressive Moving Average (ARMA) model, hence the name modelbased predictive control. Feedforward or predictive compensation up to a predetermined receding prediction horizon provides improved control performance since it allows the controller to react before a measurable disturbance has effected the system. The sequence of control predictions is established in a recursive fashion vis a vis the ARMA model, thus increasing controller response time and flexibility.
One embodiment of the control system of the present invention is described with reference to the block diagram of FIG. 5, which shows that the temperature controller 100 (FIG. 4) comprises several interacting components. The overall block diagram of the dynamic system (e.g., the controller, the reactor, the lamps and the sensors) comprises both the controller 100 and the plant or reactor 20 for which the controller is responsible. The reactor 20 may be exposed to uncontrolled disturbances 104 which influence the reactor state response through disturbance signal input e(t) 124. The disturbance signal 124 may affect the state of the reactor 20, as measured by the plurality of process control inputs y(t) 116 (or process outputs), in this case comprising an array of the measurements made by temperature sensors 44, 46, 48, 50 at the discrete time variable t. The control input 116 is provided to the temperature controller 100 through the predictor 108. The temperature controller comprises principally interacting components: the predictor 108, the model 110, a controller or control law processor 112, and is supplied with a command sequence W(t) 122 from a process controller 106 in accordance with the predefined sequence of desired process temperatures. The predictor 108 computes a sequence of future reactor states y(t+kt) (120), where k is a discrete time index referenced to time t As defined herein, a predicted functional value f(t+k) made at time t is denoted by f(t+kt). The predictions y(t+kt) are made through any formulation based on the model 126, coupled with the control input 116 and control strategy u(t) 118. The predictor output 120 extends forward in time from t to t+N, where N is the prediction horizon The predictions y(t+kt) are reciprocally supplied as input to the control law processor 112. The control law processor 112 computes an optimal control strategy u(t) 118 based on a predetermined control criterion (discussed later), the supplied predictor output 120 and the supplied command sequence W(t) 122. The optimal control strategy 118 is supplied as a process input to a lamp driver 102 which converts the control signals 118 to electrical power input signals P(t) 114. The lamp input signals 114 are supplied to the reactor lamps, thereby affecting the radiant heat distribution within the reactor 20.
The following detailed description provides a functional explanation of the algorithm used in the modelbased predictive controller. A brief derivation of the algorithm serves to exemplify the application to temperature control in general, as well as to the preferred embodiments of RTP temperature control. For clarity, the derivation begins with a singleinput, singleoutput (SISO) process model, subsequently generalized to the multiinput, multioutput (MIMO) case.
In this section the general formulation for the linear singleinput, singleoutput (SISO) polynomial model will be described.
A preferred SISO polynomial model has the following general form:
where y(t) is the control input, u(t) is the process input, e(t) is a zeromean gaussian white noise sequence, t is the discrete time index (t=. . . −2, −1, 0, 1, 2, . . . ), q^{−1 }is the backwardshift operator q^{−1}y(t)=y(t−1), and A(q^{−1}), B(q^{−1}), C(q^{−1}), D(q^{−1}), and F(q^{−1}) are the polynomials
Here the polynomials C(q^{−1}) and F(q^{−1}) are asymptotically stable polynomials with all their zeros strictly inside the unit circle, and D(q^{−1}) is a stable polynomial with its zeros inside or on the unit circle. The A(q^{−1}) polynomial may contain unstable process poles, and the B(q^{−1}) polynomial may contain nonimmunephase zeros. The C(q^{−1}) and D(q^{−1}) polynomials are herein defined as design polynomials. An advantageous feature of the present preferred model formulation is the definition and inclusion of polynomials D(q^{−1}) and F(q^{−1}). Their influence in the model behavior more effectively decouples any correlation between the noise input e(t) and process input u(t). It is believed that such decoupling more accurately reflects the true behavior of a thermal process reactor.
To facilitate the model predictions, the filtered signals y_{f}(t) and u_{f}(t) are defined as
Consequently, Equation (1) can be rewritten as
Hence, another advantageous feature of the present preferred model formulation is the definition and use of the filtered signals y_{f}(t) and u_{f}(t). As disclosed herein, the filtered signals y_{f}(t) and u_{f}(t) provide convenient closedform solutions for the predicted response y(t+kt). As previously defined, y(t+kt) denotes the predicted value of y(t+k) based on measurements available at time t, i.e., {y(t), y(t−1), . . . , u(t−1), u(t−2), . . . } and (postulated) future values of the process input { u(tt), u(t+1t), . . . u(t+kt)}. From the expression for the filtered output at time t+k, namely
it follows that the optimal kstepahead predictor is simply given as
where e(t) is assumed to be pure white noise. For k≦0 the predictor is given by
In terms of the unfiltered process output, Equations (5) and (6) can be written as
and
Equation (8) plays an essential role in the proper initialization of the difference equation (7). The filter y_{f}(t+kt) is reinitialized at each step t and gives consecutively all values in the whole prediction range {y(t+kt)} for k=1 . . . N, where N is the prediction horizon.
The structure of the predictor algorithm is substantially as that shown in the dashed block 148 of the flow chart shown in FIG. 6. The process control begins with an initialization block 127 followed by a computation of the forced response gain vector K 129 (to be discussed below in connection with the control law). At each time step t, the process input y(t) and output u(t) vectors, as well as the filtered vectors y_{f}(t) and u_{f}(t), are shifted in the time index as indicated by the shift block 128, in accordance with the receding horizon formulation. The following process steps exemplify the predictor structure:
(1) Measure y(t) at a process block 130 and store the data in a database { y(t),y(t−1), . . . ; u(t−1), u(t−2), . . . }, as indicated by a process block 132;
(2) Postulate the future control policy { u(tt), u(t+1t), . . . u(t+Nt)} in a process block 134.
The simplest assumption to make about the future process inputs is that they will remain constant Thus, u(t−1)=u(t1)=u(t+1t)=. . . =u(t+Nt).
As elaborated in the next section C, the assumptions made here lead to a computation of the free response of the system, which is subsequently compared to the desired response in order to deduce an optimal control strategy.
(3) Compute the vector of filtered inputs { u_{f}(tt), u_{f}(t+1t), . . . u_{f}(t+Nt)} in a process block 136 in accordance with Equation (3) using:
where
and
and where b_{0 }(since b_{0}=0) and f_{c0}=1 (since f_{0}=1, and c_{0}=1).
Store the result in a database {u_{f}(t)} in a process block 138;
(4) Compute y_{f}(t) in a process block 140 in accordance with Equation (2) using
where
and a_{0}=1 (since a_{0}=1, and d_{0}=1);
Store the result in a database {y(t)}, as indicated by a process block 142;
(5) Set the filtered process output y_{f}(t+kt) equal to the filtered process input u_{f}(t+Nt) in a process block 144 in accordance with Equation (5):
(6) Compute the predictions {y(t+1t), y(t+2t), . . . , y(t+Nt) } in process block 146 from Equations (7) and (8) using:
Note that only u_{f}(t) and yet) have to be saved for the next time step (t+1). All other predicted data, indicated with (t+kt), can be forgotten after time t The set of predictions y(t+kt) is supplied to the predictive controller, described in the following section.
The predictive controller of the present invention determines the control strategy u(t) which minimizes the cost function H, defined as:
subject to
where w(t) is the actual set point, N is the prediction horizon, and N_{u}is the control horizon, Δu(t)=u(t)−u(t−1), and Δu(t+kt)=u(t+kt)−u(t+k−1t). The cost function H comprises terms quadratic in [w(t+k)−y(t+k)] and [u(t+k)−u(t+k−1)]. The set of terms involving the control input y(t) reflects the predicted controller tracking error, which is desirably minimized with respect to future control moves u(t+kt). The set of terms involving the control strategy u(t) reflects the effort to achieve a given level of tracking error. The prefactor λ is preferably tuned to provide the desired level of controller response. In a presently disclosed exemplary embodiment, λ=0.
Since the model of the system is linear, the future response y(t+kt) can be considered as a superposition of two separate contributions:
Here, the free response, y_{0}(t+kt), is the result of past process inputs {u(t−1), u(t−2), . . . , } assuming that all future control moves are zero (i.e., Δu(tt)=Δu(t+1t . . . =0, or equivalently, u(tt)=u(t−1), u(t+1t)=u(t), . . . ), and of the disturbances acting on the system. The free response is computed with the procedure given in the previous section, using the prediction horizon N, and u(tt)=u(t+1t)=. . . =u(t+Nt)=u(t−1).
The forced response, y_{p}(t+kt) is the result of future control moves Δu(tt), Δu(tt), Δu(t+1t), . . . , Δu(t+N_{u}−1t). It is the effect of a sequence of step inputs to the system: a step with amplitude Δu(tt) at time t, resulting in a contribution g_{k}Δu(tt) to the predicted output at time (t+k), plus a step with amplitude Δu(t+1t) at time (t+k), etc. The total effect is thus
where
G(q^{−1})=g_{0}+g_{1}q^{−1}+g_{2}q^{−2}+. . .
is the step response of the system B(q^{−1})/(A(q^{−1})F(q^{−1}(). Since b_{0}=0, then g_{0}=0. Moreover g_{k}=0 for k<0. Using matrix notation and assuming N≧N_{u }results in the following expression for the vector of forced response contributions to the predictions:
In matrix notation, the vector of predicted errors can be written as:
Or, equivalently, with obvious definitions for the newly introduced variables, as
In the same fashion, and at the same time using Equation (12), the cost function (9) can be written as
Minimizing H with respect to U gives the solution
Only the first element of U* is actually required to compute the control input:
At the next time slot (t+1), the whole procedure is repeated, taking into account the new measurement information y(t+1) and new set point data w(t+N+1), in accordance with the receding horizon principle.
Denoting the first row of (G^{T}G+λI)^{−1}G^{T }by K, the control law is given by
The gain vector K is computed in accordance with the foregoing matrix expression. Note that this gain vector has to be computed only once in the nonadaptive case, i.e., the case in which the model parameters remain fixed. This computation can be done in the initialization phase of the algorithm as previously mentioned and shown in process block 128 of FIG. 6. Alternatively, the gain vector can be precomputed offline and stored in memory. Adaptive extension of the foregoing control law would, in essence, provide for periodic adjustment of the gain vector K.
A dashed portion 166 of the flow chart in FIG. 6 corresponds to the predictive controller and is supplied with the process output predictions y(t+kt) 120 generated in the dashed portion 148. Because the postulated future control input u(t+kt) is assumed constant and equal to u(t−1) (process block 134 ), then the predicted output y(t+kt) is equivalent to the future free response of the system y_{0}(t+kt). In a process block 150, the system free response is set to the previously computed predictions y(t+kt) (block 146). The system free response is supplied to a process block 152, along with the current set point information firm a block 154. At the process block 152, the optimum process control input U*(t) is computed using y_{0}(t+kt), W(t), u(t−1) and the gain vector K initially computed in block 128. The optimum control input U*(t) is used to adjust the lamp drivers at time=t in a process block 158. Additionally, the value of U*(t) is incorporated in the process input matrix {u(t)} in the block 156 which is subsequently supplied to the process block 134 in preparation for the next timestep operation. Following the lamp bank control adjustment in the block 158, a decision block 162 may test to determine whether the process cycle is complete. If not, then a timestep increment is made in a block 160, which then shifts the setpoint matrix in the block 154, as well as process input/output matrix at the block 129.
It will be appreciated that the formulation of the modelbased predictive control algorithm for multiinput, multioutput (O) systems is an extension of the SISO case. Those skilled in the art of control systems will know how to extend the previously described computational formalism to multivariant systems.
The MMO control systems modeled by the methods of the present invention are those characterized by a plurality of input u_{i}(t) variables and output y_{j}(t) variables, where the variable indices i, j run up to the number of respective input and output variables m, n. Each output of the MIMO is related to all inputs via a dynamic relationship of the form (1):
Here, m denotes the number of inputs and n denotes the number of outputs. Both m and n are four in the case of the exemplary RTCVD system shown in FIG. 1. The MIMO multistep predictor is conveniently considered as a consecutively applied predictor of a multiinput, singleoutput (WISO) mode. Therefore, equations (15) can be considered as a set of coupled MISO models. Defining the filtered signals as
and
the filtered process output signal is written as:
analogous to that shown in Equation (4).
Thus, the kstepahead predictor for the j^{th }process output is given by
Similarly, the MISO equivalent of Equations (7) and (8) is given by
The action produced by the MIMO predictive controller preferably minimizes the multivariant cost function analogous to Equations (9) and (10):
with respect to Δu_{i}(t+kt) and subject to:
Introducing the following notation for the step response coefficients related to input j and output j
the forced response of output j due to postulated future variations of the control inputs
can be written as:
with similar expressions for the other zones. The vector of predicted errors for the first process output in the time frame of interest can now be written as:
or, equivalently, using matrix notation by analogy to Equation (12),
with similar expressions for the other process outputs. Using the same notation, the cost function (24) can be written as:
The general solution to the minimization of Equation (28), subject to the criteria of Equation (27) and similar equations for the other process outputs, is found to be
with I the identity matrix of appropriate dimension, and
Finally, the control output is calculated via
In practice, exemplary model parameters may for example comprise multiinput, multioutput (MIMO) 3rd order polynomial model coefficients defined by
with
A_{j}=1,
D_{j}=1−q^{−1},
C_{j}=(1−C_{1}q^{−1})(1−C_{1}q^{−1})
for all j, and n=m=4 for the exemplary embodiment described earlier. Empirical testing of a particular reactor will determine the most appropriate values for the coefficients as outlined below.
The foregoing description of a preferred model and algorithm for a multivariable modelbased predictive control system is general in nature. It can be applied to a variety of systems having input/output relationships characterized by a suitably accurate model implemented in an ARMA fashion. The longrange predictive nature of the modelbased control algorithm provides fast response and robust behavior in addition to the flexibility afforded by the ARMA model.
The following system description incorporates the foregoing algorithm, model and model implementation to provide static and dynamic temperature uniformity control in rapid thermal processing reactors.
As shown in FIG. 7, a multivariable temperature control system for a rapid thermal process reactor comprises a temperature sensor array disposed within the process reactor 20. The temperature sensors may comprise thermocouples or other such equivalents. In the present embodiments, thermocouples 180, 182, 184, and 186 or other such temperature sensors are connected to the susceptor 24 as previously described in FIG. 1. The temperature sensors 180, 182, 184, 186 are each connected to a data bus via input/output devices such as buffer amplifiers and analogtodigital (A/D) converters 188, 190, 192 and 194. The temperature sensor input/output devices 188, 190, 192 and 194 are preferably housed in a temperature data acquisition assembly 172 and are located in the vicinity of the reactor 20 to minimize measurement error. The outputs of the A/D converters 188, 190, 192, 194 are connected to a data bus 195 which in turn connects to an input/output port 167 of the system temperature controller 170. The temperature controller 170 comprises a processor 165, a data storage device 169, and data input/output devices 167, 168 which provide hardware/software implementation of the foregoing modelbased predictive control algorithm. The output of system controller 170 are connected to a plurality of lamp drivers 174 via a data bus 198 and provide the lamp drivers with their reeve control signals Y(t). As previously mentioned, the plurality of lamp drivers may comprise a bank of SCR power regulators configured in a predetermined manner to supply electrical power to the plurality of lamps in reactor 20. Preferably, the SCR's and lamps are connected to supply radiant energy to the plurality of reactor heat zones in accordance with the preferred radiant heat distribution within the reactor 20. The lamp driver outputs P(t) 200 are connected to the lamps in accordance with this plan, thereby completing the temperature control loop.
In operation, the temperature sensors 180,182, 184 and 186 provide analog signals indicative of the wafer temperature in respective zones center, side, front and rear. As shown in FIG. 7, the analog signals are filtered (buffered) and converted to digital signals by the respective A/D converters 188, 190, 192 and 194. The digitized temperature information Y(t) is transmitted via the data bus 196 to the system controller 170 which computes the optimal control strategy Lr(t) using the foregoing modelbased predictive control algorithm and dynamic system model. The information necessary for future processing, namely Y(t) and U*(t), is retained in the controller data storage device. The system controller 170 transmits the control input U*(t) via the data bus 198 to the lamp driver assembly 174 whereupon the control signals U(t) are distributed to the appropriate SCR packs 171, 173, 175. The SCR's convert the control signals U*(t) to the lamp drive signals P(t) as previously discussed in connection with the prior art system of FIG. 2. The lamp drive signals P(t) are transmitted to and distributed among the lamp banks in reactor 20 via the bus 200. The lamp banks and lamp drive signals are configured spatially and temporally, in part by the temperature controller 170, to provide a predetermined spatial and temporal temperature profile over wafer 22.
The present section discloses exemplary identification and modeling procedures in order to arrive at a model that accurately describes the dynamics of a multivariable rapid thermal reactor. The ensuing model resides at the core of the modelbased predictive temperature control system of the present invention. The test arrangement and conditions are first described, after which the model structure and order selection procedures are discussed. The model is then presented along with exemplary model validation.
For modeling and identification, a PCbased Data Acquisition and Control (SA&C) system (not shown) is connected to the RTCVD reactor. A software based system is used to provide the interface between the DA&C hardware and the user. The PC is used to control the temperature in the reactor, for example, by using a conventional softwarebased PID algorithm. The DA&C system is also capable of injecting stimuli, in the form of appropriate test signals, into the system in openloop mode and detecting the response of the temperature sensors. This openloop mode comprises a substantial portion of the system operation during the identification experiments. The inputs to the system, such as SCR drive signals, and the outputs, such as thermocouple readings, are stored in a data file. Analysis of the signals and modeling are performed offline using softwarebased analysis familiar to those skilled in the art of model identification. The identification experiments will result in a model for the transfer function from the four control signals for the center, front, side, and rear zones to the center 44, front 46, side 48, and rear 50 thermocouples.
Identification experiments on the RTCVD reactor are conducted at atmospheric pressure and at a temperature between 600° C.800° C., which is a typical temperature range for polysilicon deposition. The controller zone ratio settings are optimized for steadystate uniformity at 650° C. and are maintained constant during the experiment. The system is set for 6″ wafer processing. A nitrogen purge flow of 20 slm is used throughout the experiment. Identification experiments are also performed in H_{2 }ambients both at 1 atm and reduced pressure at about 200° C. for typical epitaxial deposition conditions. The lampbank configuration may be adjusted and in general may differ from that previously shown in FIG. 2 in terms of zone distribution and lamp power. Those skied in the art of reactor design will appreciate that a variety of lamp bank distributions are possible. In particular, an exemplary lamp distribution may have all lamps operating at the same nominal power rating of between 3 kW and 7 kW, with some modification in the distribution of SCR lamp drivers to lamp heating zones. Additionally, the SCR/lamp wiring may differ between zones to facilitate the power distribution between lamps. The preferred lamp bank distribution, power and wiring will in general depend on the desired thermal processing and reactor geometry. For the purposes of the present preferred embodiments, the preferred design criteria result in a lamp bank configuration having better controllability of the peripheral zones and having reduced temperature differences across the wafer as well as between wafer and susceptor.
Careful experimental design for dynamic system identification is paramount to obtaining a good model. Several design variables must be considered: the type and shape of input signal, its spectrum, the sample rate, the number of samples, and the antialiasing presampling filters. Essentially, the experiment must be designed such that it is informative, i.e., that it provides the experimenter with the desired information about the system. For an experiment to be informative, the input stimuli must be persistently exciting. Basically, this means that the input signals must have enough spectral content to excite all relevant modes of the system. A detailed treatment on system identification and experiment design is provided in L. Ljung, System Identification: Theory for the User, PrenticeHall Englewood Cliffs, N.J. (1987). Classical system identification makes use of stepsignals, pulses or sine waves as test signals for identification purposes. The modem equivalent of these signals for identification of multivariable systems is the PseudoRandom Binary Signal ORBS), having a signal level that alternates between two levels at random times. In the exemplary test shown here, the PRBSs are allocated peaktopeak amplitudes of about 1.5 V in order to provide sufficient system excitation. Mean signal levels are chosen to correspond to the steadystate controller output voltage levels corresponding to a temperature of about 650° C. The sampling rate is taken to be about 0.5 Hz. A onehour run is recorded. The resulting data set is split in two, the first half being used for identification purposes and the second half for model validation purposes. DCoffsets are eliminated from all input and output signals.
An exemplary input/output identification data set for the center zone is shown in FIGS. 8A and 8B, showing the first 200 seconds of system stimuli (FIG. 8B) and response (FIG. 8A). Corresponding identification data sets for the front, side, and rear zones are obtained in the same manner and display substantially similar characteristics.
Once the identification data set has been collected, the next step is to choose a model structure. Generally, this involves three steps:
1. Choosing the type of model set (e.g., linear or nonlinear, inputoutput, blackbox or physically parameterized statespace models).
2. Choosing the size of the model set. This is called the modelorder selection and determines the number of free parameters in the model description.
3. Choosing the model parameterization. That is, choosing the positions of the free parameters in the selected model structure.
The choice of model structure will likely involve a tradeoff between flexibility and parsimony. A higherorder model will be more flexible, but may lead to unnecessarily many parameters being used to describe the true system. Moreover, a highorder model is more difficult for online use in a modelbased controller. The principles and guidelines for system modeling are wellknown to those skilled in the art of system control. Again, for a more indepth treatment of the topic of model structure selection one is referred to Ljung (1987).
As described above in Section III.D., the present embodiment of the multiinput, multioutput, modelbased predictive controller utilized a multiinput, multioutput polynomial model in an autoregressive moving average representation in Equation (15). The model is advantageously considered as a set of coupled linear multiinput, singleoutput polynomials which allow convenient description of the filter process signals (Y_{f})_{j }and (U_{f})_{j }(see Equations (17) and (18)).
The exemplary model parameters provided in Table I below refer to a multiinput, multioutput (MINO) 3rd order polynomial model coefficients defined by
with
n=m=4, and
A_{j}=1,
D_{j}=1−1 ^{−1},
C_{j}=(1−C_{1}q^{−1})(1−C_{1}q^{−1})
for all j.
TABLE I  
F_{11 }= [ 1.000  −1.7566  0.7613],  
B_{11 }= [ 0 0.2226  0.0617],  
F_{12 }= [ 1.000  −1.8167  0.8197],  
B_{12 }= [ 0 0.1158  0.0281],  
F_{13 }= [ 1.000  −1.8577  0.8599],  
B_{13 }= [ 0 0.0974  −0.0038],  
F_{14 }= [ 1.000  −1.8297  0.8325],  
B_{14 }= [ 0 0.2638  0.0386],  
F_{21 }= [ 1.000  −1.8813  0.8832],  
B_{21 }= [ 0 0.0231  0.0622],  
F_{22 }= [ 1.000  −1.8433  0.8470],  
B_{22 }= [ 0 0.3518  0.2178],  
F_{23 }= [ 1.000  −1.8728  0.8748],  
B_{23 }= [ 0 −0.0629  0.1559],  
F_{24 }= [ 1.000  −1.8889  0.8903],  
B_{24 }= [ 0 0.0031  0.0773],  
F_{31 }= [ 1.000  −1.8516  0.8543],  
B_{31 }= [ 0 0.0430  0.0723],  
F_{32 }= [ 1.000  −1.8633  0.8656],  
B_{32 }= [ 0 0.0686  0.0617],  
F_{33 }= [ 1.000  −1.8507  0.8537],  
B_{33 }= [ 0 −0.0404  0.1992],  
F_{34 }= [ 1.000  −1.8772  0.8798],  
B_{34 }= [ 0 0.0610  0.2238],  
F_{41 }= [ 1.000  −1.7650  0.7696],  
B_{41 }= [ 1.000  −1.7650  0.7696],  
B_{41 }= [ 0 0.1305  0.0149],  
F_{42 }= [ 1.000  −1.7605  0.7643],  
B_{42 }= [ 0 0.0878  −0.0020],  
F_{43 }= [ 1.000  −1.8488  0.8520],  
B_{43 }= [ 0 0.2827  −0.1662),  
F_{44 }= [ 0 −1.6447  0.6587],  
B_{44 }= [ 0 2.1642  0.3143].  
In the present exemplary system, i and j may correspond to the zone number (i.e., I=center, 2=front, 3=side, 4=rear).
Once a model structure has been selected and a parameterization has been found, the proposed model is preferably validated. Standard techniques for model validation include simulation, residual analysis, and crosscorrelation analysis.
In simulation, usually a fresh data set is used, i.e., data from the real system that was not used in the identification phase. The model is fed with the same inputs as the actual system and a comparison is made between model outputs and system outputs. Such an exemplary comparison is made in FIG. 9, again for the center zone, using the data of the last 30 minutes of the experiment which were not used for model building purposes. In FIG. 9, both model output 302 and system output 300, in this case the center thermocouple reading after subtraction of the steadystate value, are plotted versus time (measured in samples, where the sampling interval is a fixed time interval). A measure of fit is derived from curves 300 and 302. The curves shown have a meansquaredeviation of about 3.5, where a lower value indicates a better fit Corresponding validation for the front, side, and rear zones should obtain substantially the same degree of fit.
Residual analysis is used to check whether there is any structural information left unexplained by the model. Ideally, the residuals (difference between model predictions and system output) should be white or random with time and independent of the inputs for the model to correctly describe the system. The curve 304 in FIG. 10 shows the correlation function of the residual for the center zone output for time lags up to 25 sampling intervals. Dotted lines indicate 99% confidence limits, assuming the residuals are indeed white. Cross correlation between system inputs and residuals should also show a zero mean with an RMS deviation staying well below the 99% confidence. Such behavior, as indicated by a curve 306 in FIG. 10, should be observed for all crosscorrelated quantities, which indicates there is no significant systematic unaccounted input/output correlation.
As a final test for the model validation, the model is used to predict thermocouple readings using information on past inputs and outputs. A fresh data set, as used in FIG. 9, is also used in the present comparison shown in FIG. 11. FIG. 11 shows the system output (center thermocouple) and the oneminute ahead predictions of the system output made using the model predictor. Notice that the predictive capabilities of the model are excellent. Prediction results for the front, side, and rear zones (not included) show similar behavior.
Using identification and verification techniques described herein, the model described above has been found to provide a very accurate description of system dynamics for an exemplary RTP reactor at atmospheric pressure and in a temperature range of 600800° C. The ARMAX model is shown to have predictive capabilities particularly advantageous for the present preferred embodiment of a modelbased predictive controller. The lookahead feature of the model can be used, for instance, to minimize overshoot, thus improving recovery time and minimizing recipe cycle times. It will be appreciated that the precise form of the model can vary appreciably without departing from the spirit and scope of the present invention. In general the model form will be dictated by demands on a variety of factors including flexibility, accuracy, sensitivity, robustness and speed. One alternative preferred embodiment is to reduce the model order for minimizing computational overhead, without significant loss of accuracy. Additional preferred embodiments comprise:
Extending tee predictive controller to include adaptive behavior, whereby model parameters are themselves subject to realtime assessment and modification
Utilizing constraint input optimization. The optimal control strategy (29) does not take into account constants on input energy to the system (linearity assumption). This may lead to lessthanoptimal behavior during fast heatup and cooldown. This situation is improved by checking the proposed control moves for constraint violations. If a control move violates a constraint, it is set to the limit value and the remaining “free” future moves are recomputed. This process is iterative and ends when all future moves are at their limit value or an iteration no longer adds new constraint moves. This simple new technique is substantially easier to implement than the conventional quadratic programming solution.
Extending the linear model to a nonlinear model, preferably by utilizing neural networks to model the static gain (nonlinear) in series with the ARMAX model.
As previously seen, a preferred embodiment of the dynamic system model is capable of tracking and predicting the dynamic behavior of multiple heat zones within reactor 20. Likewise, a preferred multivariant temperature control system of the present invention is capable of maintaining a predetermined temporal sequence of temperatures for each heat zone of the reactor 20 as exemplified by FIG. 12A The solid curves 400, 402, 404, 406 of FIG. 12A indicate the temperature setpoint sequence to be followed by independent heat zones: center, side, front and rear respectively. The dashed curves 401, 403, 405 and 407 are the respective temper e profiles followed by the center, side, front and rear heat zones as a result of action by the temperature controller 170. Time lag between zones is substantially eliminated due to the predictive action by controller 170 operating on all zones in parallel. Furthermore, temperature differences between zones, as intentionally programmed in FIG. 12A, become a relatively simple matter of zonetozone offset control. As shown in FIG. 12B, the temperature controller 170 supplies the plurality of SCRs with drive signals appropriate for the respective heat zones at a given time. The curves 410, 412, 414 and 416 correspond to the center, side, front and rear SCR drive signals respectively. Thus, while the temporal setpoint sequence and actual temperature profile is qualitatively similar for each of the four heat zones (FIG. 12A), the SCR drive signals for each zone display very different behavior as determined by the temperature controller 170.
An exemplary demonstration of predictive control versatility is seen in FIG. 13A, wherein each zone separately is provided with a temperature step sequence, initially positive then negative. As seen in FIG. 13A, initially the center zone (1) is programed for a positive temperature excursion, then a negative temperature excursion, followed in succession by the side (2), front (3) and rear (4) zones. The controller 170 provides the necessary control signals concurrently to all four zones such that each zone, independently, maintains the programmed temperature profile. Note that while a specific zone is ramped up or down, the other zone temperatures are substantially unchanged, indicating the substantially complete decoupling of heat zones as a result of the modelbased predictive control. As shown in FIG. 13B, the exceptional temperature control displayed by the preferred embodiment is also manifest in the control signals. To account for the strong thermal coupling between zones, the controller compensates by diving each zone with a signal appropriate to maintain the prescribed temperature profile, both spatially and temporally. Evidently, the modelbased predictive control system of the present invention, implemented in a rapid thermal process reactor, substantially optimizes process cycle time as well as spatial temperature uniformity.
In yet another embodiment of model basedpredictive controllers, the linear model disclosed above can be further enhanced by using a nonlinear model of the process reactor. A preferred method for implementing the nonlinear model involves the use of neural networks. A preferred embodiment of the neural network based nonlinear predictive controller is a Neural Extended Prediction control (NEPco) neural model based predictive controller for the susceptor temperature control of the ASMA reactor.
FIG. 14A is a block diagram that illustrates a fabrication system 1400. A recipe block 1401 provides input into a NEPco process block 1402. The NEPco process 1402 outputs control signals to one or more SCR's that operate one or more lamps 1403. The lamps 1403 provide heat to a reactor 20 which is represented by a reactor process block 1404. A group of unmeasurable outputs from the reactor process block 1404 are the wafer surface temperatures 1405. A group of measurable outputs from the reactor process block 1404 are the susceptor temperatures 1406. The susceptor temperatures are fed back into the NEPco process block 1402 to facilitate temperature control of the wafer 22 and the susceptor 24.
The temperature of the wafer surface is of major importance for the deposition process. However, the wafer temperature is not measured during normal operation. The only signals which are directly measured for control purposes are the susceptor temperatures. Experiments have indicated that these susceptor temperatures provide a reasonable approximation of the unknown wafer temperature distribution. Experimental results indicate that good susceptor control alone is not sufficient to obtain very tight wafer control.
The NEPco embodiment of the present invention discloses a procedure for improved control of the susceptor temperature signals 1406. This improvement provides the immediate benefits of improving the temperature control of the susceptor 24 and therefore the wafer 22, and it sets the stage for improvements using various models based on the soft sensor principle.
FIG. 14B illustrates an overview of the hardware, software, and conceptual components that comprise the system 1400. The reader is urged to refer back to FIG. 14B before reading each section below in order to place the section about to be read in context. FIG. 14B shows a three layer structure of elements that comprise the system 1400. Lower levels in the structure represent, at greater levels of detail, the internal elements of the upper layers. A controller system layer 1410 comprises the system 1400 and is the topmost level of the system 1400. Working downward, the next level is the predictive modeling level 1411 which comprises a predictor process 1500, a series parallel predictor 1801, a parallel predictor 1800, and a neural network 1600. The lowest of the three levels is a training layer 1412 which comprises a pseudo least squares (PLS) block 2300, a pulsetest experiment block 1900, and an initial estimate block 2400.
Retuning to the predictive modeling layer 1411, the predictor process 1500 is shown as being part of the NEPco process block 1402. The seriesparallel predictor 1801 and the parallel predictor 1800 are shown as being different implementations of the predictor process 1500. A unit step response 2100 is shown as being an internal component of the parallelpredictor 1800. The neural network 1600 is shown as being a part of the parallel predictor 1800.
Returning to the training layer, the PLS training method block 2300 is shown as applying to the neural network 1600. The pulsetest experiment block 1900 and the initial estimate block 2400 are shown as being inputs to the PLS training method block 2300.
FIG. 15 illustrates a block diagram of the nonlinear process model 1500. A process input u(t) 1501 is the sole input to a model process block 1502. The process input 1501 appears in the equations as u(t) and is typically a voltage to the lamp driver SCRS. The model process block 1502 exhibits a nonlinear transfer function f( . . . ). A model output x(t) 1504 is an output of the process block 1502. The model output x(t) 1503 appears in the equations that follow as x(t) and is typically a temperature expressed in ° C. The model output x(t) 1503 and a process disturbance n(t) 1503 are added together at a summing junction 1506. The output of the summing junction 1506 is a process output y(t) 1505. The process disturbance 1503 is expressed in the equations that follow as n(t) and is typically expressed as a temperature in ° C. The process output 1505 is expressed in the equations that follow as y(t) and is typically the susceptor temperature measurements expressed as a temperature in ° C. Thus, as shown in FIG. 15, the process output 1505 can be expressed mathematically as y(t)=x(t)+n(t).
The process distance n(t) 1503 includes all effects in the process output y(t) 1505 which do not come from the model output x(t) 1504. The process disturbance n(t) 1503 is a fictitious (unmeasurable) signal which includes such disturbance effects as deposition, gas flow, measurement noise, model errors, etc. These disturbances typically have a stochastic character with nonzero average value. The disturbances can usually be modeled by a colored noise process given by:
where:
e(t)=white noise (uncorrelated noise with zero mean value)
As in the linear case, q^{−1 }is the backward shift operator where q^{−n}s(t)=s(t−n) and s(t) is a timedependent signal were t denotes a discrete time index (t−0, 1, 2, . . . ). The filter C(q^{−1})/D(q^{−1}) is a disturbance model. While many acceptable disturbance models are possible, in the preferred embodiment for the ASMA application it has the structure:
where c and d are design parameters (preferred values are: c=d=0).
The model output x(t) 1504 represents the effect of the power input u(t) 1501 on the susceptor (thermocouple) temperature. This is an unmeasurable signal, as only the combined effect of control action plus disturbances is measurable via the thermocouple sensors 44, 46, 48, and 50.
The relationship between the input u(t) and the output x(t) is a dynamic relationship in that the present temperature x(t) does not depend on the present input u(t), but on the previous temperatures {(x(t−1), x(t−2), . . . } and the previous inputs {u(t−1), u(t−2), . . . }. Moreover, experimental measurements show that for a typical ASMA reactor, the relationship between u(t) and x(t) is also strongly nonlinear. For example, in one experiment the effect of a specific power input variation on the resulting temperature was found to be quite different around 800° C. as compared to 1100 ° C. These temperatures are by way of example only since different reactors will exhibit different properties.
The effect u(t)→x(t) can thus be represented by a nonlinear dynamic model where the transfer function f[. . . ] 1502 is an unknown nonlinear function, such that:
In the preferred embodiment, the function f[. . . ] is implemented as a neural network.
FIG. 16 illustrates a typical typical neural network. In FIG. 16, the set of past model outputs 1604 {x(t−1), x(t−2), . . . } and the set of past model inputs {u(t−1), u(t−2), . . . } are shown as inputs to a layer of input neurons 1601. The input neurons 1601 are connected to a layer of hidden neurons 1602 such that every one of the input neurons 1601 is connected to every one of the hidden neurons 1602. The hidden layer 1602 contains three hidden neurons 1610, 1611, and 1612. The hidden neurons 1602 have outputs labeled z_{1 }. . . z_{i}, . . . z_{n }such that z_{i }is the output of the first hidden neuron 1610 and z_{n }is the output of the last hidden neuron 1612. The connections between the input neurons 1601 and the hidden neurons 1602 are labeled w_{ij} ^{[1]} where i indicates the hidden neuron having the output z_{i }and j indicates which of the input neurons 1601 is being connected. The superscript [1 ] indicates the connection starts from the first layer of neurons. All of the hidden neurons 1602 are connected to an output neuron 1613 by connections labeled w_{i} ^{[2]} where i indicates the hidden neuron output z_{i }that is being connected to the output neuron 1613. The superscript [2 ] indicates the connections from the second layer of neurons of neurons.
The input neurons 1601 are nonactive neurons in that the neurons do not perform any computation, they only distribute the input signals to the hidden neurons 1602. In the preferred embodiment of the ASMA application, a third order model is used, meaning the six input neurons 1601 corresponding to the three previous values of x(t), namely x(t−1), x(t−2) and x(t−3), and the three previous values of u(t), namely u(t−1), u(t−2), and u(t−3), are provided as inputs to the input layer 1601.
The hidden layer preferably contains nonlinear sigmoidtype neurons. Sigmoid neurons are well known in the art (see e.g., James A. Freeman and David M. Skapura, “Neural Networks” Addison Wesley, 1991). The hidden neuron outputs z_{i }are computed as follows:
Where I is an input vector given by:
and W_{i} ^{[1]} is a weight vector given by:
W_{i} ^{[1]}=[w_{i1} ^{[1]}w_{i1} ^{[1]}w_{i3} ^{[1]}w_{i4} ^{[1]}w_{i5} ^{[1]}w_{i6} ^{[1]}].
The function s(x) is a sigmoid function shown graphically in FIG. 22 and given mathematically by the equation:
The parameters in the weight vectors W_{i} ^{[1]} (i=1 . . . n) and the biases b_{i} ^{[1](i=}1 . . . n) are unknown and must be estimated from experimental data during the training of the neural net. The biases b_{i} ^{[1]} are used to compensate for an offset in the process model. The offset arises from the fact that, in reality, the output x(t) is not necessarily zero when he input u(t) is zero.
FIG. 19 shows a simple neural network 1900. The simple neural network 1900 comprises a single hidden neuron 1904 of the sigmoid type. The hidden neuron 1904 has a group of inputs 1901 comprised of model outputs x,(t−1), x,(t−2), and x_{1}(t−3). The hidden neuron 1904 also has a group of model inputs 1902 comprised of model inputs u_{1}(t−1), u_{1}(t−2), and u_{1}(t−3). The hidden neuron 1904 also has a group of model inputs 1903 comprised of model inputs u_{4}(t−1), u_{4}(t−2), and u_{4}(t−3). FIG. 19 further illustrates that the hidden neuron 1904 has inputs comprised of model inputs u_{2}(t−1 ), u_{2}(t−2), u_{2}(t−3), u_{3}(t−1), u_{3}(t−2), and u_{3}(t−3). An output of the hidden neuron 1904 feeds a linear output neuron 1905. The neural network 1900 has a single output x_{1}(t) 1906.
The most simple neural net has only one neuron in the hidden layer 1602 (n=1) and thus only one output z_{1}. It was found experimentally that the simple neuron network 1900 (where n=1) is a good choice for the ASMA application: Additional hidden neurons provide improvement of the control performance, but the computational load and the modeling effort both increase dramatically.
The output layer contains the single linear output neuron 1613. The output of the output neuron 1613 is computed as follows:
where
and
For the ASMA application with only one neuron in the hidden layer (n−1), equation (33) reduces to
The weight and bias of the output neuron should be identified together with those of the hiddenlayer neuron. In fact, all of the weight and bias parameters together constitute the model of the unknown process dynamics.
As in the linear case, the notation y(t+kt) denotes the predicted value of y(t+k) at time t, for k=1 . . . N_{2 }where N_{2 }is the prediction horizon,. Thus, y(t+kt) is based on:
measurements available at time t, i.e., {y(t), y(t−1), . . . , u(t−1), u(t−2), . . . }; and
future (postulated) values of the input {u(tt), u(t−1t), . . . }.
In other words, the notation ( . . . t) means ‘postulated at time t’. Using the process model 1500, from FIG. 15, it follows that:
Of the many possible configurations known in the art for recursion of a nonlinear network model, the two most preferred configurations for modeling the ASMA reactor are a parallel model and a seriesparallel model There is no requirement that the nonlinear model 1502 be based upon a neural network. However, the preferred embodiment uses a neural network. For convenience and clarity of presentation herein, the model will assumed to be implemented using neural network, with the understanding that other (nonneural network) implementations are possible.
FIGS. 17A and 17B show block diagrams of two common recursion networks. FIG. 17A is a block diagram of the parallel model network. In FIG. 17A, the model 1701 is shown as a neural network (NN) process block with an input vector 1707 and a single output x(t+k)t) 1704. The input vector 1707 has a group of inputs 1702 comprising model outputs 1504. The model outputs 1504 comprise (x(t+k−1t), x(t+k−2t), and x(t+k−3t). The input vector 1707 has a group of process inputs 1703 comprising process inputs 1501. The inputs 1501 comprise (u(t+k−1t), u(t+k−2t), and u(t+k−3t). FIG. 17B shows the seriesparallel model neural network as an NNblock 1751, which is a process block with an NNinput vector 1757 and a single output x(t+k)t) 1754. The NNinput vector 1757 has a group of inputs 1752 comprising process outputs 1505. The inputs 1505 comprise (y(t+k−1t), y(t+k−2t), and (t+k−3t). The NNinput vector 1757 also has a group of inputs 1702 comprising process inputs u(t+k−1t), u(t+k−2t) and u(t+k−3t).
The parallel model, also known in the art as the independent model, preferably should be used only for stable processes. The seriesparallel model can also be used for unstable processes. To obtain similar control performance with both models, the disturbance model C(q^{−1})/D(q^{−1}) should be chosen differently. Both models are useful for the the ASMA application; however, the parallel model is preferred and so it is described in greater detail herein.
At each sampling instant t, the recursion is started with k=0 and x(tt) is computed using the NN input vector 1707 [x(t−1) x(t−2) x(t−3) u(t−1) u(t−2) u(t−3)], which contains values from the past, thus known at time t. Notice that x(t)≡x (tt) and that this value can be saved in the database for further use at future sampling instants.
Then for k−1, the previously computed x(tt) is used at the NN input to compute x(t+1t), etc. Notice that x(t+1);k x(t+1t), but x(t+1) x(t+1t+1). The value x(t+1t) can thus be discarded after time t. The recursion is restarted at each sampling instant, because x(t+kt+1)≠x(t+kt) for k>0. Indeed, x( . . . t+1) is computed based on information available and postulated at time t+1 while x( . . . t) is based on information that was available and postulated at time t. This information is different, as the knowledge base is updated at every sampling instant with new information coming from the sensor data.
At time t, using the data [x(t−1), x(t−2), x(t−3), u(t−1), u(t−2), u(t−3)], x(t) is computed using the NNmodel 1701. Using the measured value y(t), the current value of the disturbance n(t) 1503 is computed using the process model: n(t)=y(t)−x(t). Notice that the previous values of n(t), namely {n(t−1), n(t−2), . . . } are available in the computer memory.
The filtered disturbance signal
is computed using the difference equation:
Since the disturbance model is:
then the signal n_{f}(t)=e(t). As white noise is, by definition, uncorrelated, the best prediction of the white noise is the mean value, which is zero. Thus:
The best prediction of the disturbance is obtained from:
which can be computed using the difference equation:
The recursion goes from k−1 . . . N_{2}. The recursion starts with k=1. The signal values in the righthand side, namely n(tt), n(t−1t), . . . , n_{f}(tt), n_{f}(t−1t), . . . are known, while n_{f}(t+1t)=0. The computed value n(t+1t) is then used in the righthand side, together with n_{f}(t+2t)=0 in order to compute n(t+2t), etc.
FIG. 18 is a flowchart that illustrates the process for computing a new set of predictions for n(t+kt), u(t+kt), and y(t+kt) at each timestep t.
(1) Measure y(t) at a process block 1801 and store the data in a database containing {y(t), y (t−1), . . . }.
(2) Measure u(t−1) at a process block 1802 and store in a database containing {u(t−1), u(t−2), . . . }.
(3) Postulate a future control policy {u(tt), u(t+1t), . . . , u(t+N_{2}t)} in a process block 1803.
(4) In a process block 1804, compute the current model output x(t):
where s( . . . ) denotes the sigmoid function;
W^{[1]}=[w_{1} ^{[1]w} _{2} ^{[1]}w_{3} ^{[1]}w_{4} ^{[1]}w_{5} ^{[1]}w_{6} ^{[1]}], b^{[1]}, w^{[2]}, b^{[2]} are the NN weight and bias parameters. Notice that x(tt) is not really a prediction because it depends only on past values and not on the future control inputs, so x(tt) ≡x(t). The value x(tt) is saved in a database containing {x(t), x(t−1), x(t−2), . . . } because it is used again at the next sampling instant.
(5) Compute n(t) y(t)−x(t) in a process block 1805 and save the value in a database containing {n(t), n(t−1), n(t−2), . . . }.
(6) In a process block 1806, compute the filtered disturbance signal n_{f}(t) from:
and save in a database containing {n_{f}(t), n_{f}(t−1), n_{f}(t−2) . . . }.
(7) In a process block 1807, reset the prediction values
(8) In a process block 1808, compute the predictions n(t+1t), n(t+2t) . . . , n(t+N_{2}t) from:
(9) In a process block 1809, compute the predictions x(t+1↑t), x(t+2t), x(t+N_{2}t) from:
with
with
with
Note that all data indicated with (. . . t) can in principle be discarded after time t because these data depend on information available at time t and are recomputed at every sampling instant, after new measurement information is obtained.
As with the linear case, the single input, single output (SISO) controller will be discussed first because it is simpler than the more general multiple input, multiple output model, and yet illustrates the basic principles. FIG. 20 illustrates the waveforms in the SISO controller for α=0 (defined belw). FIG. 20 shows a twoaxis plot having an xaxis 2001 showing, having a yaxis 2002 showing a curve 2003 representing u, a curve 2004 representing, and a horizontal line 2005 representing the curve w/r. The yaxis 2002 is positioned on the xaxis 2001 at time L. Therefore, time values on the xaxis 2001 that lie to the right of the yaxis 2002 represent the future, such as u(t+kt ). Similarly, points on the xaxis 2001 that lie to the left of the yaxis 2002 represent the past.
The ultimate objective of the SISO controller is to find the control input u(tt) which minimizes the cost function:
where:
The design parameters are and preferred values are:
N_{2}=the prediction horizon (preferred values=3 . . . 9)
N_{u }=the control horizon (preferred value=1)
N_{1 }. . . N_{2}=the coincidence horizon (preferred values=1 . . . N_{2})
λ=the weight parameter (preferred value=0)
α=the filter parameter (preferred value=0)
Conceptually, the sure response y(t+kt) can be considered as the sum of two separable effects, namely the free response and the forced response, where:
The free response y_{free}(t+kt) is a direct result of: (1) the effect of past control {u(t−1), u(t−2), . . . } as if {Δu(tt)=Δu(t+1t)=. . . =Δu(t+N_{u}−1t)≡0} or {u(tt)=u(t−1),u(t+1t)=u(t−1), }; and (2) the effect of future distances n(t+kt). The free response y_{f}ee(t+kt) can be computed with the procedure described in FIG. 18, with
The forced response y_{f} _{forced}(t+kt) is a direct result of: (1) the effect of future control actions {Δu(tt),Δu(t+1t), . . . Δu(t+N_{u}−1t)}. In the preferred embodiment, the forced response y_{forced}(t+kt) is the effect of a sequence of step inputs 1920 having:
(1) a step with amplitude Δu(tt) at a time t, resulting in a contribution g_{k}Δu(tt) to the predicted process output at time (t+k) (=k sampling periods later);
(2) a step with amplitude Δu(f+1t) at time (t+1), resulting in a contribution
(3) etc., such that the total effect is:
The parameters g_{1}, _{2}. . . , gk, gN_{2 }are the coefficients of the unit step response of the system. Where the unit step response is the response of the system output for a stepwise change of the system input (with amplitude 1). For a nonlinear system, such as a NN, the unit step response is different for each operating point. Thus it should be computed at each sampling instant by applying a fictitious stepwise change to the current process input 1501 and computing its effect on the process output 1505, using the NNmodel 1701. Finally, note that g_{0}=g_{−1}=. .. ≡0.
In expanded matrix notation, the forced response is expressed as:
Now changing notation for simplicity let {overscore (y)}(t+kt) y_{free }(t+kt) then:
or using compact matrix notation:
With this notation, the cost function becomes:
Minimization with respect to U gives an optimal solution:
where I is the identity matrix.
The following comments are in order. First only the first element, Δu(tt), in U* is required to compute the control input u(t)=u(t−1)+Δu(tt). At the next sampling instant (t+1), the whole procedure is repeated taking into account, the new measurement information y(t+1). This is called the “receding horizon” principle of MBPC. Second, the matrix [G^{T}G+λI] which must be inverted has dimension N_{u}×N_{u}. For the default case, where N_{u}=1, this results in the scalar control law:
Finally, the notation w( . . . t) means the future setpoint as postulated at time t. If the setpoint is preprogrammed, the future setpoint values w(t+k) can be used for w(t+kt): w(t+kt)=w(t+k), k=1 . . . N_{2}. The predictive control strategy will then taking action in advance, before the actual setpoint change occurs. If this is not desired, then the current setpoint value is used for w(t+kt) is:
In this section the SISO principles discussed above are extended to MIMO systems. For simplicity a two input, two output system is discussed first. The extension to the ASMA application with four inputs and four outputs will then follow in a straightforward manner.
With two inputs, and two outputs, the process model is now:
where;
As before, the functions f_{1}[. . . ] and f_{2}[. . . ] are nonlinear unknown process models. In the SISO case, only one neural network was necessary, in the present case, with two outputs, two neural networks are necessary.
Assuming a pair of white noise signals e_{1}, and e_{2}, the stochastic disturbances are modeled by colored noise processes:
As with the SISO case, the objective is to find the control inputs u_{1}(tt) and u_{2}(tt) which minimize the cost function
where Δu_{1}(t+kt)≡0 and Δu_{2}(t+kt)≡0 for k≧N_{u}.
For a 2×2 system, four step responses can be defined, describing the effect of a stepwise change of each of the two inputs on each of the two outputs. The coefficients of the step response of input j to output i are denoted by: {g_{1} ^{ij }g_{2} ^{ij }g_{3} ^{ij }. . . }
Introducing the usual matrix notation, the forced response in y_{1}(t+kt) due to postulated future variations for both control inputs is:
A similar expression exists for Y_{2forced}(t+kt)
Denote the free response in y_{1}(t+kt) by {overscore (y)}_{1}(t+kt). Setting all future input variations equal to 0, such that u_{1}(tt)=u_{1}(t+1t)=. . . =u_{1}(t−1) and u_{2}(tt)=u_{2}(t+1t)=. . . =u_{2}(t−1), gives:
or using matrix notation.
and similarly for the 2nd output:
With this compact notation, the cost function introduced above can be rewritten as:
A compound matrix G_{1 }is defined as G_{1}=[G_{11 G} _{12}], a compound matrix G_{2 }is defined as G_{2}=[G_{21}G_{22}] and a compound vector U is defined as U=[U_{1} ^{T}U_{2} ^{T}]^{T }
Using these compound values, the expressions for the predicted error vectors then become:
and the cost function becomes:
Minimization of this scalar expression with respect to the vector U (by setting
leads to the optimal solution:
Note that even in the preferred case where N_{u}≡1, a matrix inversion is required, in this case a 2×2 matrix. In the general case, where n_{u }is the number of control inputs, a matrix of dimension (N_{u}·n_{u})×(N_{u}·n_{u}) must be inverted. Only two elements in U* are used for applying the control at time t:
Extension of the two input, two output case to four inputs (j=1 . . . 4) and four outputs (i=1 . . . 4) is straightforward:
where:
At each sampling inset there are 16 step responses
relating each of the four SCR inputs to each of the four susceptor temperature sensor outputs 44, 46, 48, and 50. The step responses are calculated by entering, for each input u_{j}, j=1 . . . 4, a step with size S_{j }in the four process models relating to the four neural nets, one for each output x_{i}, (i=1 . . . 4).
FIG. 21 is a flowchart illustrating the steps necessary to compute the step responses. The process begins at a loop control block 2101. In the loop control block 2101, a loop counter n is set to the value 1, representing the first input. The process then advances to a process block 2102 where u,(t+kt) is initialized as follows:
Processing then proceeds to a process block 2103 where the outputs of the neural network are computed, resulting in:
Processing then proceeds to a loop control block 2104 which increments the loop counter n to indicate the next input. Processing then returns to the process block 2102 where u_{2}(t+kt) is initialized as follows:
Processing then advances to the process block 2103 where the networks are used to calculate:
The above process is repeated until all of the inputs have been traversed by the loop counter n. When, in the process block 2104, the loop index n becomes larger than the number of neural networks, then the process proceeds to a process block 2105. In the process block 2105, set:
and then proceed to a process block 2106.
In the process block 2106, calculate with the four NNmodels:
The responses {x_{1 } ^{[0]}(t+kt) . . . x_{4} ^{[0]}(t+kt)} are the free responses of the neural networks and are used to calculate the system free responses {overscore (y)}(t+kt), where {overscore (y)}(t+kt)=x^{[0]}(t+kt)+n(t+kt). Processing then proceeds to a process block 2107 where the effect of a stepwise variation of an input, meaning the difference between the NNoutput with a step input and the NNoutput without a step input (the free response), is computed by:
where i=1 . . . 4 denotes output number, j=1 . . . 4 denotes the input number and division by the step size S_{j}is necessary to obtain the effect of a unit step. For nonlinear systems, the magnitude of the step sizes S_{j}, j=1 . . . 4 should be chosen according to the real input variations Δu_{j }that are expect to apply to the specific system. For the ASMA application, an appropriate choice is S_{1}=S_{2}=S_{3}=S_{4}=1 (as the range for the SCR inputs is (0 . . . 5).
Model Based Predictive Control (MBPC) is a control strategy which relies heavily on the availability of the model 1502. The preceding sections have largely assumed the existence of the model 1502, preferably based on a neural network 1600, without elaborating how the model is generated. This section begins with a brief discussion of the advantages of using a neural network 1600 as the basis for the model 1502 and then describes how the model is generated. Since the model is based on a neural network 1600, generation of the model is largely a process of training of the neural network. Training the neural network corresponds to the training layer 1612 of FIG. 14B, and requires the PLS training method 2300, the pulsetest experiment 1900, and the initial estimates 2400 shown in that Figure.
Modeling of a physical system for control purposes requires the finding of a mathematical relationship (a model) between the system's inputs and outputs. For the ASMA application modeling entails construction of a mathematical model that describes the effect of the SCRsignals (the inputs) on the susceptor thermocouple signals 44, 46, 48, and 50 (the outputs). The model depends on the underlying physical characteristics of the process, which in this case, is mainly a thermal process. Instead of building a first principles model, starting from complicated physicalchemical laws, the preferred approach is to use a black box model (a neural network) and train that network using experimental data obtained from the reactor during an identification experiment.
The obtained model should be quite general in that it should be valid for other experimental data than those used during the identification experiment, as long as the reactor is operating in similar conditions of temperature range and reactor configuration. If essential changes occur, the process will generally need to be remodeled. The modeling of a typical ASMA reactor takes less than 1 hour, including the required identification experiment.
In a preferred embodiment, a Pseudo Least Squares (PLS) method is used to train the neural network 1600 as a nonlinear model for the ASMA reactor. The NNmodel is then further used in the NEPco predictive control strategy as shown in FIG. 14B.
The training procedure consists of the following general steps of:
(1) performing an experiment with the reactor to obtain the modeling data, in the preferred embodiment this experiment is a pulsetest experiment 1900;
(2) training the neural network (NN) 1600 using the data obtained from the pulsetest experiment 1900, in the preferred embodiment the NN model is trained using a pseudo least squares (PLS) method 2300; and
(3) validation of the resulting model.
The pulsetest experiment 1900 and PLS method 2300 are described in detail below. In a preferred embodiment, the software necessary to perform the modeling tasks is implemented using MATLAB®. However, the preferred embodiment could be recoded in other languages without difficulty.
In the preferred embodiment, the ASMA reactor is a system with four inputs (SCRsignals) and 4 outputs (thermocouple signals) as listed in Table II.
TABLE II  
The four input ASMA reactor system  
The inputs are denoted as:  The outputs are denoted as: 
u_{1}(t): center SCR signal (05V)  y_{1}(t): center thermocouple signal (° C.) 
u_{2}(t): front SCR signal (05V)  y_{2}(t): front thermocouple signal (° C.) 
u_{3}(t): side SCR signal (05V)  y_{3}(t): side thermocouple signal (° C.) 
u_{4}(t): rear SCR signal (05V)  y_{4}(t): rear thermocouple signal (° C.) 
The reactor is computercontrolled and all signals are sampled on a discretetime basis. The symbol t denotes the discretetime index (1,2,3, . . . ). Training the neural network 1600 requires that a set of modeling coefficients {W^{[1]}, b^{[1]}, W^{[2]}, b^{[2]}} be generated. The modeling coefficients depend on a sample period, SamplePeriod. In the preferred embodiment, the SamplePeriod is 2 seconds. The numerical values in the model depend on this sampling period. This means that the control, which is based on this model, should also be executed with a sampling period of 2 seconds. The sample period can be changed without ill effect, but if the control sampling period is changed, remodeling to compute a new set of coefficients is prudent A characteristic of the model is that each output {y_{1 }. . . y_{4}} depends on all four inputs {u_{1 }. . . u_{4}}. In order to identify these relationships, it is necessary to do an experiment with the reactor in order to obtain useful identification data. A particularly preferred experiment is the pulsetest, which consists of sending consecutively a pulse in each SCR input and measuring each thermocouple reaction. In order to cover the entire nonlinear operating range of the reactor (e.g. 800° C. to 1100° C.), the test is repeated at several base values of the SCR inputs. A parameter Duration determines how many samples each pulse lasts. In a preferred embodiment, the Duration is five samples (10 seconds).
A parameter BaseValues is a row vector containing one or more base values for the SCR inputs, in volts (V). Typical BaseValues are [0.8, 1.3, 2.0 ], corresponding approximately to reactor temperatures [800, 950, 1100 ] (in ° C). More than three base values can be used, leading to higher accuracy, however, this requires a correspondingly longer experiment. The pulses are executed successively for each base value. The time between two pulses, specified as a number of samples in a parameter Period, depends on the settling time of the reactor. For a common reactor, typical values for the parameter Period are between 60 and 120 samples. None of these parameter values are critical and wide variation in values will yield acceptable results.
The duration of the pulsetest experiment is N samples (2* N seconds), where N=Duration*Period*Nbase, where Nbase is the number of entries in the vector BaseValues. The result of the pulsetest experiment 1900 is a dataset containing all input and output samples of the pulsetest experiment. This dataset can be used by the modeling software to train the NN model.
The preferred embodiment of a feed forward neural network for temperature control, as shown in FIG. 16, comprises: n inputs x_{j }where k−1 . . . n; one hidden layer with m nonlinear sigmoid type neurons; and a linear output layer with one output y. The input layer is a layer of nonactive neurons. The nonactive neurons do not perform any computation, they only distribute the input signals to the neurons in the hidden layer. The hidden neurons have outputs z_{i}, where i=1 and i refers to a specific hidden neuron. The outputs z_{i }are computed as follows:
The parameters in the weight vectors W_{i } ^{1}(i=1 . . . m) and the biases b_{i} ^{[1]}(i=1 . . . m) are unknown and must be estimated from experimental data The biases are desirable in order to compensate for the fact that the output y is not necessarily zero when the input x is zero.
The output layer contains a single linear neuron. The output y is computed as follows:
Here again, training the NN involves estimating the weights W and biases b.
For the estimation of all of these parameters, a set of training data from the pulsetest experiment is used. The data from the pulsetest experiment includes the experimental inputs XERO, and the corresponding outputs T(k); k=1 . . . N. Thus, T(k) are target values and N is the number of samples. The training of the NN consists of estimating a set of parameters W_{i} ^{[1 ]}, b_{i} ^{[1]}W^{[2]}, and b^{[2]} where i=1 . . . m and such that, given a set of inputs X(k), the outputs y(k), k=1 . . . N are as close as possible to the target values T(k), k=1 . . . N.
The phrase “as close as possible” is generally quantified by a Sum of Squared Errors (SSE) value V given by:
The NN herein is nonlinear, and thus no closed form method is currently known for estimating W_{i} ^{[1]}, b_{i} ^{[1]}, W^{[2]} and b^{[2]}. However, a heuristic training method, called Pseudo Least Squares (PLS), has been found to work well in this application.
The PLS method has the advantages of simplicity, ease of programming and fast training speed. The PLS method, described in more detail below, involves finding an initial set of estimates, and then using an iterative procedure to refine the initial estimates. Briefly, the iterative procedure involves starting at the hidden layer of neurons and working forward, thought the NN, towards the output neuron, refining the parameters W and b for each layer. The following sections herein present the PLS method and a procedure for implementing the method
The parameters {W^{[2]}, b^{[2]}} of the output layer are estimated in order to minimize the SSE loss value V:
All other network parameters {W_{i} ^{[1]}, b_{i} ^{[1]}; i=1 . . . m} are assumed to be known at time L. Minimization is obtained by setting the derivatives of V(W^{[2]}, b^{[2]}) with respect to {W^{[2]},b^{[2]}} equal to zero:
For ease of notation, two extended vectors [{tilde over (W)}^{[2]}=[W^{[2]}b^{[2]}] and
are defined. Then the output y can be written in terns of the extended vectors as:
and thus the two conditions above can be combined as
leading to
With
this gives:
A least squares solution to the above equation is:
The parameters W_{i} ^{[1]}, and b_{i} ^{[1]} of neuron i (i=1 . . . m) in the bidden layer are estimated in order to minimize the SSE loss function:
All other network parameters W_{i} ^{[1]}, b_{i} ^{[1]}; . . . ; W_{1−1} ^{[1], b} _{i−1} ^{[1]}; W_{i+1} ^{[1]}, b_{i+1} ^{[1]}; . . . ; W_{m} ^{[1]}, b_{m} ^{[1]}; W^{[2]}, b^{[2]} are assumed to be known. Minimization is obtained by putting the derivatives of V(W_{i} ^{[1]},b_{i} ^{[1]},) with respect to {W_{i} ^{[1]}, b_{i} ^{[1]}} equal to zero, such that:
For ease of notation, define two extended vectors {tilde over (W)}_{i} ^{[1]}=[W_{i} ^{[1]}b_{i} ^{[1]}] and
are defined. Then,
The condition
gives
Using the chain rule for differentiation, the above derivative is found to be:
leading to the nonlinear estimator equations
Now introducing a backpropagated error term δ_{i}, defined as:
results in
Now introduce a minimum backpropagation error:
where ε is a small number (e.g., ε=10^{−4}). This guarantees that each δ_{i}(k); k=1 . . . N is a small number. The equation for the estimator then becomes:
or
FIG. 22 illustrates the sigmoid function FIG. 22 shows the sigmoid function plotted on an X axis 2201 ranging from −3 to 3, and a Y axis 2202 ranging from −1 to 1. A neuron input n 2203 and corresponding neuron output z 2206 are shown on the X axis 2201 and Y axis 2202 respectively. Slightly displaced from the neuron input n 2203 and corresponding output z 2206 are a fictitious neuron input n* 2204 and a corresponding fictitious neuron output z* 2205.
The neuron output z 2206 corresponds to fictitious neuron output z* 2205 according to the relationship z_{i}*(k)=z_{i}(k)+δ_{i}*(k). Thus n_{i}*(k) is such that z_{i}* (k)=s[n_{i}*(k).].
Note that given z* it is easy to compute n* as:
Since the difference z*−z=δ* is very small, it can be stated, with arbitrary accuracy, that:
The estimator equations thus become
and with n_{i}(k)=W_{i} ^{[1]}·{tilde over (X)}(k) thus leading to the least squares solution
In this section, divorced from the theoretical development above, is a summary of the PLS method to estimate the vectors W and b. FIG. 23 is a flowchart illustrating the PLS procedure. The PLS method does requires an initial estimate for each of the vectors. Since there are many methods that can be employed to develop the initial estimates, the process of developing the estimates is not, strictly speaking, a part of the PLS method. Therefore, the PLS method presented here merely assumes that an initial estimate is available. A preferred method for developing the initial estimates is described below.
In a process block 2301, compute a suitable stating set of initial estimates {W_{i} ^{[1]}, b_{i} ^{[1]}, W^{[2]}, b^{[2]}}
Proceeding to a process block 2302, compute an initial hidden neuron input vector N(k), for k−1 . . . N from:
and an initial hidden neuron output vector Z(k), for k=1 . . . N from:
and an initial neural network output y(k) for k=1 . . . N;
and finally, a current SSE loss value V_{old }from:
Proceeding to a process block 2303, for each hidden neuron (i=1 . . . m), compute the following items:
the derivative s′[n_{i }(k)]=1 −s[n_{i}(k)]^{2}=1−z_{i}(k)^{2 }for k=1 . . . N;
the back propagation error:
the scaled value:
the fictitious input and output:
new weights and biases for neuron i from:
the corresponding new neuron input:
the corresponding new neuron output:
the new network output:
and a corresponding new SSE value V_{new};
Proceeding to a decision block 2307, if V_{new }is smaller than V_{old}, then proceed to a process block 2308, otherwise, jump to a process block 2309. In the process block 2308 replace the old values of W^{[1]}, b^{[1]}, y(k) and V_{old }with the new values of W^{[1]}, b^{[1]}, y(k), and V_{new}. Then proceed to the process block 2309.
In the process block 2309, for the output neuron, compute s′[n_{i}(k)], δ_{i}(k), δ_{i}*(k), z_{i}*(k) using W^{[1]}, and b^{[1]}. Also in the process block 2309, for the output neuron, compute W_{new} ^{[2]}, and b_{i,new} ^{[2]} and use them to compute z_{i}(k) and n_{i}(k), y_{new}(k) and V_{new}. In the process block 2313, the new weights and bias for the output neuron are given by:
where
and the new network output is given by:
Then proceed to a decision block 2313. In the decision block 2313, if V_{new }is less than V_{old }then proceed to a process block 2314, otherwise jump to a decision block 2315. In the process block 2314 replace the old values of W^{[2]}, b^{[2]}, y(k) and V_{old }with the new values of W^{[2]}, b^{[2]}, y(k), and V_{new}.
In the decision block 2315, if the value of V_{old }has not stopped changing or reached some specified small value then processing returns to the process block 2302 for another iteration, otherwise, the process advanced to an end block 2316 and terminates.
The result of the procedure in FIG. 23 is a new set of parameters [W^{[1]},b^{[1]}, W^{[2]}, b^{[2]}] and related network internal variables {N(k), Z(k)} and output values {y(k), V}. As indicated in decision block 2315, The whole procedure can be repeated a number of times until the decrease of V is zero or less than a specified small value. As is always the case with nonlinear search procedures, the choice of a good set of initial values is of utmost importance in order to reduce the number of iterations and to prevent getting stuck in local minima.
A preferred approach to the initialization problem is to start from the parameters of the linear model:
(1) Compute the parameters {tilde over (W)}=[W b] by minimizing the SSE loss V, where:
leading to the least squares solution
(2) Select m positive random numbers {a_{1}, . . . , a_{i}, . . . , a_{m}} such that
Set {tilde over (W)}_{i} ^{[1]}=a_{i}. {tilde over (W)} and:
This selection assures that each hidden neuron input, being given by
lies between −0.1 and +0.1, so that the values are in the linear zone around 0 on the sigmoid curve, thus:
The neural net output for this choice of initial values, being given by:
will thus be close to the linear model output, which is a reasonable start condition.
In yet another embodiment of model basedpredictive controllers, the linear and nonlinear models disclosed above can be further enhanced by adding a softsensor model to the basic MBPC fabrication system 1400.
The temperature of the wafer surface is of major importance for the deposition process. However, the pointtopoint wafer temperature is not measured during normal operation. Experiments have indicated that the susceptor temperatures give a reasonable approximation of the unknown wafer temperature distribution There are also experimental results which indicate that good susceptor control alone is not sufficient to obtain very tight wafer control.
Temperature transients (rampup/rampdown) are typical situations m which wafer and susceptor temperatures might differ considerably. This is due to the different mass (heat capacity) of susceptor and wafer. Good susceptor control with no (or very low) temperature overshoot does not necessary lead to wafer control with low overshoot. Moreover the front 46, side 48 and rear 50 susceptor setpoints require the specification of an offset with respect to the center 44 susceptor setpoint in order to result in a good temperature uniformity over the wafer surface. In the prior art these offsets are found by trial and error.
The more more systematic method and apparatus presented here, which solves the above problems, is the use of MBPC combined with the softsensor principle. The concept is that the unmeasured wafer temperature can be replaced by the outcome of a model describing the dynamic relationship between susceptor and wafer temperatures. In the preferred embodiment, this softsensor model is identified using data obtained from experiments with an instrumented wafer.
FIG. 24 is a block diagram that illustrates an extension of the basic fabrication system 1400 to a softsensor fabrication system 2400. A recipe block 2401 provides input into a setpoint generator block 2410. An output of the setpoint generator block provides input to a MBPC process block 2402 and a softsensor process block 2412. An output of the sour process block 2412 is a wafer estimate 2414. The output of the wafer estimate 2414 is fed back into the setpoint generator block 2410. The MBPC process block 2402 outputs control signals to a reactor and lamp system 2404. A group of unmeasurable outputs from the reactor process block 2404 are the wafer surface temperatures 2405. A group of measurable outputs from the reactor process block 2404 are the susceptor temperatures 2406. The susceptor temperatures are fed back into the MBPC process block 2402 to facilitate temperature control of the wafer 22 and the susceptor 24.
The recipe 2501 is used as setpoint for the susceptor temperature. Then, in the basic control structure, the recipe is interpreted as setpoint for the wafer temperature. The setpoints for the susceptor control are then computed internally in the control strategy, using the softsensor principle.
A model, describing the dynamic relationship between susceptor setpoints and wafer temperatures, is identified using an instrumented wafer. The instrumented wafer is a special wafer which has temperature sensors on the surface of the wafer 20. This allows actual wafer surface temperatures to be measured. These measured values are used to obtain modeling coefficients for the softsensor process block 2412. During normal operation of the reactor, the softsensor process block 2412, being a part of the control software, can be used to generate an estimate of the wafer temperature.
An inverse softsensor model is then used to generate intermediate signals, which are further used as setpoints for the standard susceptor controller. In a preferred embodiment, the setpoints generator 2410 is a PID filter and the softsensor block 2414 is a linear FIR filter.
The result is that the wafer temperatures, and not the susceptor temperatures, are controlled towards the values specified in the recipe. This procedure also computes, automatically, the necessary of sets for center 44, front 46, side 48 and rear 50 susceptor setpoints in order to bring all wafer temperatures close to the recipe. This leads to better uniformity of the temperatures over the wafer surface.
While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit, scope and teaching of the invention. Accordingly, the embodiments herein disclosed are to be considered merely as illustrative and limited in scope only as specified in the appended claims.
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Cited By (91)
Publication number  Priority date  Publication date  Assignee  Title 

US20010034686A1 (en) *  19971210  20011025  Eder Jeff Scott  Method of and system for defining and measuring the real options of a commercial enterprise 
US6343183B1 (en) *  19950901  20020129  Asm America, Inc.  Wafer support system 
US6373033B1 (en)  19960131  20020416  Asm America, Inc.  Modelbased predictive control of thermal processing 
US20020046143A1 (en) *  19951003  20020418  Eder Jeffrey Scott  Method of and system for evaluating cash flow and elements of a business enterprise 
US6401003B1 (en) *  19971230  20020604  Samsung Electronics Co., Ltd.  Alarm system for semiconductor device fabrication facility 
US6438430B1 (en) *  19960506  20020820  Pavilion Technologies, Inc.  Kiln thermal and combustion control 
US20020128805A1 (en) *  20001226  20020912  Insyst Intelligent Systems Ltd.  Model predictive control (MPC) system using DOE based model 
US6453219B1 (en)  19990923  20020917  Kic Thermal Profiling  Method and apparatus for controlling temperature response of a part in a conveyorized thermal processor 
US6465761B2 (en) *  20000724  20021015  Asm America, Inc.  Heat lamps for zone heating 
US6469284B1 (en) *  19991125  20021022  Nec Corporation  Lamp annealer and method for controlling processing temperature thereof 
US6470239B1 (en)  19990923  20021022  Kic Thermal Profiling  Method for maximizing throughput of a part in a conveyorized thermal processor 
WO2002097540A1 (en) *  20010525  20021205  Parametric Optimization Solutions Ltd.  Improved process control 
US20030009241A1 (en) *  20010616  20030109  Klaus Kruger  Openloop and closedloop control method, and a control device for starting up and shutting down a process component of a technical process 
US20030014131A1 (en) *  19960506  20030116  Havener John P.  Method for optimizing a plant with multiple inputs 
US20030028266A1 (en) *  20010629  20030206  Robert Jacques  Tuning control parameters of vibration reduction and motion control systems for fabrication equipment and robotic systems 
US6522990B1 (en)  19991203  20030218  General Electric Company  Methods and apparatus for reducing temperature overshoot 
US20030083757A1 (en) *  20010914  20030501  Card Jill P.  Scalable, hierarchical control for complex processes 
US20030100974A1 (en) *  20011129  20030529  Alvarez Eduardo Gallestey  Optimal operation of a power plant 
US20030125905A1 (en) *  20011228  20030703  Patanian John Jacob  Method and apparatus for assessing performance of combined cycle powerplants 
US20030125906A1 (en) *  20011228  20030703  Guaglardi Paul A.  Method and apparatus for assessing the impact of individual parts of a gas turbine component on the overall thermal performance of a gas turbine 
US6596973B1 (en)  20020307  20030722  Asm America, Inc.  Pyrometer calibrated wafer temperature estimator 
US6606537B1 (en) *  20010419  20030812  Kic Thermal Profiling  Method for correcting process temperature profile in a multizone thermal processor 
US6642486B1 (en) *  20021107  20031104  Illinois Tool Works, Inc.  Method and apparatus for replicating heat profile of infrared oven 
US20030209327A1 (en) *  20020508  20031113  Vladamir Kuznetsov  Temperature control for single substrate semiconductor processing reactor 
US6694289B1 (en) *  19990701  20040217  International Business Machines Corporation  Fast simulation method for single and coupled lossy lines with frequencydependent parameters based on triangle impulse responses 
US6703592B2 (en)  20000201  20040309  Asm America, Inc.  System of controlling the temperature of a processing chamber 
US20040088239A1 (en) *  19991020  20040506  Eder Jeff S.  Automated method of and system for identifying, measuring and enhancing categories of value for a valve chain 
US20040098145A1 (en) *  20021114  20040520  Liu Zhenduo  Hybrid cascade modelbased predictive control system 
US6746237B2 (en)  20010516  20040608  Asm International N.V.  Method and device for heat treating substrates 
US20040148037A1 (en) *  20020725  20040729  Nathaniel Frampton  System and method for model based control of a mechanical device 
US20040144770A1 (en) *  20010518  20040729  Shigeru Kasai  Method and device for vacuum treatment 
US20040181300A1 (en) *  20030311  20040916  Clark Robert L.  Methods, apparatus and computer program products for adaptively controlling a system by combining recursive system identification with generalized predictive control 
US20040215522A1 (en) *  20011226  20041028  Eder Jeff Scott  Process optimization system 
US20040215495A1 (en) *  19990416  20041028  Eder Jeff Scott  Method of and system for defining and measuring the elements of value and real options of a commercial enterprise 
US6818864B2 (en)  20020809  20041116  Asm America, Inc.  LED heat lamp arrays for CVD heating 
US6819963B2 (en) *  20001206  20041116  Advanced Micro Devices, Inc.  Runtorun control method for proportionalintegralderivative (PID) controller tuning for rapid thermal processing (RTP) 
US20050016704A1 (en) *  20011019  20050127  Taisto Huhtelin  Method and apparatus for controlling the operation of stock preparation of a paper machine 
US20050044892A1 (en) *  20030828  20050303  George Stephan P.  Method and apparatus for heating glass sheets 
US20050115945A1 (en) *  20031114  20050602  Kesteren Tom A.V.  Heat treatment apparatus with temperature control system 
US6911628B1 (en) *  20010125  20050628  Yamatake Corporation  Control system and control unit 
US20050145150A1 (en) *  20031231  20050707  Mortell Heather S.  Process for making a garment having hanging legs 
US20050256593A1 (en) *  20040514  20051117  Ogunnaike Babatunde A  Predictive regulatory controller 
US20060020563A1 (en) *  20040726  20060126  Coleman Christopher R  Supervised neural network for encoding continuous curves 
US20060018566A1 (en) *  20040726  20060126  Coleman Christopher R  System and method for adding spatial frequency into an image 
US20060017740A1 (en) *  20040726  20060126  Coleman Christopher R  Diurnal variation of geospecific terrain temperatures in realtime infrared sensor simulation 
US20060059028A1 (en) *  20020909  20060316  Eder Jeffrey S  Context search system 
US20060054088A1 (en) *  20040914  20060316  Sumco Corporation  Vapor phase epitaxial growth apparatus and semiconductor wafer production method 
US7022627B2 (en)  20031031  20060404  Asm International N.V.  Method for the heat treatment of substrates 
US20060110944A1 (en) *  20041122  20060525  Asm International N.V.  Dummy substrate for thermal reactor 
US20060143115A1 (en) *  20001017  20060629  Eder Jeffrey S  Enterprise risk management system 
US20060141808A1 (en) *  20031031  20060629  Asm International N.V., A Netherlands Corporation  Method for the heat treatment of substrates 
US20060167591A1 (en) *  20050126  20060727  Mcnally James T  Energy and cost savings calculation system 
US20060224255A1 (en) *  20030821  20061005  Masato Tanaka  Pid parameter adjustment device 
US20060272772A1 (en) *  20050602  20061207  Applied Materials, Inc.  Vacuum reaction chamber with xlamp heater 
US20060289795A1 (en) *  20050602  20061228  Dubois Dale R  Vacuum reaction chamber with xlamp heater 
US20070022062A1 (en) *  20030527  20070125  Ralph Grothmann  Method computer program with program code means, and computer program product for determining a future behavior of a dynamic system 
US20070036467A1 (en) *  20040726  20070215  Coleman Christopher R  System and method for creating a high resolution material image 
US20070078529A1 (en) *  20050930  20070405  FisherRosemount Systems, Inc.  Online adaptive model predictive control in a process control system 
US20070239581A1 (en) *  20060402  20071011  Eder Jeff S  A data processing framework for financial services 
US20070260346A1 (en) *  20050811  20071108  University Of South Florida  System for Multiresolution Analysis Assisted Reinforcement Learning Approach to RunByRun Control 
US20070291818A1 (en) *  20040809  20071220  Applied Materials Inc.  Method Of Determining Thermal Property Of Substrate And Method Of Deciding Heat Treatment Condition 
US20080004922A1 (en) *  19970106  20080103  Jeff Scott Eder  Detailed method of and system for modeling and analyzing business improvement programs 
US20080077257A1 (en) *  20060922  20080327  Peterson Tod J  Model predictive controller solution analysis process 
US20080183413A1 (en) *  20070130  20080731  Tokyo Electron Limited  Method of Using a WaferTemperatureDependant Profile Library 
US7427329B2 (en)  20020508  20080923  Asm International N.V.  Temperature control for single substrate semiconductor processing reactor 
US20080256069A1 (en) *  20020909  20081016  Jeffrey Scott Eder  Complete Context(tm) Query System 
US20090018891A1 (en) *  20031230  20090115  Jeff Scott Eder  Market value matrix 
US20090034948A1 (en) *  20070720  20090205  Ushio Denki Kabushiki Kaisha  Light emitting type heat treatment apparatus 
US7493470B1 (en)  20011207  20090217  Arc International, Plc  Processor apparatus and methods optimized for control applications 
US20090147819A1 (en) *  20071207  20090611  Asm America, Inc.  Calibration of temperature control system for semiconductor processing chamber 
US20090287320A1 (en) *  20080513  20091119  Macgregor John  System and Method for the Model Predictive Control of Batch Processes using Latent Variable Dynamic Models 
US20090299543A1 (en) *  20080530  20091203  Apple Inc.  Thermal management techniques in an electronic device 
US20090313041A1 (en) *  20021210  20091217  Jeffrey Scott Eder  Personalized modeling system 
US20100114793A1 (en) *  20040601  20100506  Jeffrey Scott Eder  Extended management system 
US20100143579A1 (en) *  20081210  20100610  Sumco Techxiv Corporation  Method and apparatus for manufacturing epitaxial silicon wafer 
US20110040631A1 (en) *  20050709  20110217  Jeffrey Scott Eder  Personalized commerce system 
US20110223548A1 (en) *  20081125  20110915  Utc Fire & Security Corporation  Oxygen trim controller tuning during combustion system commissioning 
US20110273682A1 (en) *  20070814  20111110  Asml Netherlands B.V.  Lithographic Apparatus and Thermal Optical Manipulator Control Method 
US20120219921A1 (en) *  20091225  20120830  Canon Anelva Corporation  Temperature control method for substrate heat treatment apparatus, semiconductor device manufacturing method, temperature control program for substrate heat treatment apparatus, and recording medium 
US20130055021A1 (en) *  19960506  20130228  Rockwell Automation Technologies, Inc.  Method and apparatus for minimizing error in dynamic and steadystate processes for prediction, control, and optimization 
US20140032010A1 (en) *  20120725  20140130  Broadcom Corporation  System and Method for Supervised Thermal Management 
US20140088787A1 (en) *  20120924  20140327  Nestec S.A.  Methods and systems for energy balance control for feed flow and feed temperature disturbances 
US8713025B2 (en)  20050331  20140429  Square Halt Solutions, Limited Liability Company  Complete context search system 
US20140365413A1 (en) *  20130606  20141211  Qualcomm Incorporated  Efficient implementation of neural population diversity in neural system 
US20150148981A1 (en) *  20131124  20150528  Qualcomm Incorporated  System and method for multicorrelative learning thermal management of a system on a chip in a portable computing device 
US20150300888A1 (en) *  20140421  20151022  National Taiwan University  Temperature prediction system and method thereof 
CN105751470A (en) *  20160323  20160713  广西科技大学  Realtime temperature control method for injection molding machine 
US9476584B2 (en)  20131212  20161025  General Electric Company  Controlling boiler drum level 
US20160365891A1 (en) *  20131213  20161215  Sharp Kabushiki Kaisha  Basestation device, terminal device, transmission method, and reception method 
WO2016207012A1 (en) *  20150626  20161229  Bayer Cropscience Ag  Method for controlling technical processes by means of linearization 
US9546914B2 (en)  20081013  20170117  Apple Inc.  Method for estimating temperature at a critical point 
Families Citing this family (56)
Publication number  Priority date  Publication date  Assignee  Title 

US7610108B2 (en) *  19960506  20091027  Rockwell Automation Technologies, Inc.  Method and apparatus for attenuating error in dynamic and steadystate processes for prediction, control, and optimization 
EP0907117A1 (en) *  19970905  19990407  Communauté Européenne (CE)  Nonlinear neural predictive control system 
US6453308B1 (en)  19971001  20020917  Aspen Technology, Inc.  Nonlinear dynamic predictive device 
JP4551515B2 (en) *  19981007  20100929  株式会社日立国際電気  Semiconductor manufacturing device and its temperature control method 
DE19855637A1 (en) *  19981202  20000615  Aixtron Ag  Method and system for producing semiconductor crystal with temperature management 
JP2001210596A (en) *  20000128  20010803  Hitachi Kokusai Electric Inc  Temperature control method of semiconductor manufacturing apparatus, semiconductor manufacturing apparatus, and manufacturing method of semiconductor device 
US6554196B2 (en) *  20000502  20030429  Nishiyama Corporation  Temperature control device 
EP1295185B9 (en) *  20000629  20050105  Aspen Technology, Inc.  Computer method and apparatus for constraining a nonlinear approximator of an empirical process 
DE10032465A1 (en) *  20000704  20020131  Steag Rtp Systems Gmbh  Method and apparatus for thermal treatment of objects 
CN1288519C (en) *  20010713  20061206  Fsi国际股份有限公司  Robotic system control 
US6616759B2 (en)  20010906  20030909  Hitachi, Ltd.  Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 
EP1343061A1 (en) *  20020308  20030910  Siemens Aktiengesellschaft  Method for simulating a technical system and simulator 
US7505877B2 (en) *  20020308  20090317  Johnson Controls Technology Company  System and method for characterizing a system 
US6864897B2 (en) *  20020412  20050308  Mitsubishi Electric Research Labs, Inc.  Analysis, synthesis and control of data signals with temporal textures using a linear dynamic system 
US7668702B2 (en) *  20020719  20100223  Applied Materials, Inc.  Method, system and medium for controlling manufacturing process using adaptive models based on empirical data 
US7050863B2 (en) *  20020911  20060523  FisherRosemount Systems, Inc.  Integrated model predictive control and optimization within a process control system 
US7272459B2 (en) *  20021115  20070918  Applied Materials, Inc.  Method, system and medium for controlling manufacture process having multivariate input parameters 
DE10329107B4 (en) *  20021223  20150528  Mattson Thermal Products Gmbh  A method for determining at least one state variable of a model of an RTP system 
KR101018234B1 (en) *  20021223  20110303  맷슨 써멀 프로덕츠 게엠베하  Method for determining the temperature of a semiconductor wafer in a rapid thermal processing system 
US7619184B2 (en) *  20030304  20091117  Micron Technology, Inc.  Multiparameter process and control method 
US20040181498A1 (en) *  20030311  20040916  Kothare Simone L.  Constrained system identification for incorporation of a priori knowledge 
JP4698578B2 (en) *  20030321  20110608  アスペン テクノロジー インコーポレイテッド  It detects collinearity, a method for validating, and repairing the article 
US7181296B2 (en) *  20030806  20070220  Asml Netherlands B.V.  Method of adaptive interactive learning control and a lithographic manufacturing process and apparatus employing such a method 
US7447664B2 (en) *  20030828  20081104  Boeing Co  Neural network predictive control cost function designer 
US7187989B2 (en)  20031222  20070306  Fakhruddin T Attarwala  Use of core process models in model predictive controller 
US7101816B2 (en) *  20031229  20060905  Tokyo Electron Limited  Methods for adaptive real time control of a thermal processing system 
EP1553470B1 (en) *  20040109  20081231  Abb Research Ltd.  Process control system 
US7025280B2 (en) *  20040130  20060411  Tokyo Electron Limited  Adaptive real time control of a reticle/mask system 
US6943327B2 (en) *  20040204  20050913  Lear Corporation  Method for the progressive control of heating elements 
WO2005077038A3 (en) *  20040206  20071129  Wisconsin Alumni Res Found  Siso model predictive controller 
US7203554B2 (en) *  20040316  20070410  United Technologies Corporation  Model predictive controller with life extending control 
US7415312B2 (en) *  20040525  20080819  Barnett Jr James R  Process module tuning 
US7502715B1 (en) *  20040921  20090310  Asml Netherlands B.V  Observability in metrology measurements 
US7751908B2 (en) *  20041202  20100706  Taiwan Semiconductor Manufacturing Co., Ltd.  Method and system for thermal process control 
JP4839702B2 (en) *  20050704  20111221  オムロン株式会社  Temperature control method, the adjusting device, a temperature controller, a program, a recording medium and a heat treatment apparatus 
GB2430764B (en) *  20050930  20110309  Fisher Rosemount Systems Inc  Online adaptive model predictive control in a process control system 
US7957847B2 (en) *  20050930  20110607  Hitachi Global Storage Technologies Netherlands, B.V.  Voltage regulating systems responsive to feedforward information from deterministic loads 
US8527252B2 (en) *  20060728  20130903  Emerson Process Management Power & Water Solutions, Inc.  Realtime synchronized control and simulation within a process plant 
DE102006036585B4 (en) *  20060804  20080417  Mattson Thermal Products Gmbh  Method and device for determining measured values 
US20090076773A1 (en) *  20070914  20090319  Texas Tech University  Method for identifying unmeasured disturbances in process control test data 
EP2091030B1 (en) *  20080215  20100106  Siemens Aktiengesellschaft  Robust evaluation of a temperature measurement signal by means of dynamic adjustment of a computational model 
WO2009114941A1 (en) *  20080320  20090924  University Of New Brunswick  Method of multidimensional nonlinear control 
US8209045B2 (en) *  20080407  20120626  Honeywell International Inc.  System and method for discrete supply chain control and optimization using model predictive control 
JP5562529B2 (en) *  20080417  20140730  大日本スクリーン製造株式会社  Heat treatment apparatus 
JP5251267B2 (en) *  20080604  20130731  富士電機株式会社  Control device 
US8260440B2 (en) *  20081205  20120904  The Regents Of The University Of Michigan  Adaptive control based on retrospective cost optimization 
DE102009016138A1 (en) *  20090403  20101014  Ipsen International Gmbh  A method and computer program for controlling the heat treatment of metallic workpieces 
US20120284216A1 (en) *  20090812  20121108  International Business Machines Corporation  KnowledgeBased Models for Data Centers 
US8244502B2 (en) *  20090812  20120814  International Business Machines Corporation  Knowledgebased models for data centers 
US20130130184A1 (en) *  20111121  20130523  Taiwan Semiconductor Manufacturing Company, Ltd.  Apparatus and Method for Controlling Wafer Temperature 
US8809747B2 (en) *  20120413  20140819  Lam Research Corporation  Current peak spreading schemes for multiplexed heated array 
US9189575B2 (en)  20130311  20151117  Toyota Motor Engineering & Manufacturing North America, Inc.  SVR dynamic system modeling with delayed output measurements 
DE102014201567A1 (en)  20140129  20150730  Bayerische Motoren Werke Aktiengesellschaft  Modelbased predictive control starter of an internal combustion engine 
US9715221B2 (en)  20140501  20170725  Aspen Technology, Inc.  Online control calculation for models containing near colinearity and uncertainty 
US9541906B2 (en) *  20140911  20170110  HongTe SU  Controller capable of achieving multivariable controls through singlevariable control unit 
JPWO2016092872A1 (en) *  20141211  20170810  富士電機株式会社  Controller, the program, a plant control method 
Citations (29)
Publication number  Priority date  Publication date  Assignee  Title 

US3836751A (en)  19730726  19740917  Applied Materials Inc  Temperature controlled profiling heater 
US4255133A (en)  19780410  19810310  Hitachi, Ltd.  Method for controlling furnace temperature of multizone heating furnace 
EP0037579A2 (en)  19800407  19811014  Juan Martin Sanchez  Adaptivepredictive control method and adaptivepredictive control system 
US4349869A (en)  19791001  19820914  Shell Oil Company  Dynamic matrix control method 
US4358822A (en)  19760804  19821109  Sanchez Juan M  Adaptivepredictive control system 
US4616308A (en)  19831115  19861007  Shell Oil Company  Dynamic process control 
US4634946A (en)  19851002  19870106  Westinghouse Electric Corp.  Apparatus and method for predictive control of a dynamic system 
US4639853A (en)  19830603  19870127  Omron Tateisi Electronics Co.  Timediscrete adaptive switching onoff controller 
US4680451A (en)  19850729  19870714  A. G. Associates  Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers 
US4688180A (en)  19841219  19870818  Ohkura Electric Co., Ltd.  Patternswitching temperature control apparatus 
US4694390A (en)  19850628  19870915  Electric Power Research Institute, Inc.  Microprocessorbased control and diagnostic system for motor operated valves 
US4714988A (en)  19820326  19871222  Kabushiki Kaisha Toshiba  Feedforward feedback control having predictive disturbance compensation 
US4720807A (en)  19850520  19880119  Vacuum General, Inc.  Adaptive pressure control system 
US4736316A (en)  19860806  19880405  Chevron Research Company  Minimum time, optimizing and stabilizing multivariable control method and system using a constraint associated control code 
US4761538A (en)  19851121  19880802  Dainippon Screen Mfg. Co., Ltd.  Method and apparatus for controlling the temperature of a radiantly heated object 
US4769766A (en)  19860911  19880906  Tung Hsien Hsin  Robust model reference controller 
US4904912A (en)  19871009  19900227  Nobuo Yamamoto  Control mechanism employing internal model coordination feedforward method 
US4959767A (en)  19881123  19900925  Elsag International B.V.  Parameter estimation technique for closed loop system 
US4975561A (en)  19870618  19901204  Epsilon Technology Inc.  Heating system for substrates 
US5032977A (en)  19890613  19910716  Elsag International B.V.  System for modeling and control for delignification of pulping 
US5099442A (en)  19891104  19920324  Ohkura Electric Co., Ltd.  Furnace temperature control apparatus using adjustment input 
CA2054423A1 (en)  19910809  19930210  Robert J. Schurko  Adaptive control for reheat furnace 
US5291514A (en)  19910715  19940301  International Business Machines Corporation  Heater autotone control apparatus and method 
US5301101A (en)  19900621  19940405  Honeywell Inc.  Receding horizon based adaptive control having means for minimizing operating costs 
US5488561A (en)  19920819  19960130  Continental Controls, Inc.  Multivariable process control method and apparatus 
US5660472A (en)  19941219  19970826  Applied Materials, Inc.  Method and apparatus for measuring substrate temperatures 
EP0829784A1 (en)  19960912  19980318  Applied Materials, Inc.  Adaptive temperature controller and method of operation 
US5755511A (en)  19941219  19980526  Applied Materials, Inc.  Method and apparatus for measuring substrate temperatures 
US5790750A (en)  19931029  19980804  Applied Materials, Inc.  Profiled substrate heating utilizing a support temperature and a substrate temperature 
Family Cites Families (2)
Publication number  Priority date  Publication date  Assignee  Title 

JPS62192281U (en)  19860527  19871207  
JP3956057B2 (en)  19960131  20070808  エイエスエム アメリカ インコーポレイテッド  Model Reference predictive control of heat treatment 
Patent Citations (30)
Publication number  Priority date  Publication date  Assignee  Title 

US3836751A (en)  19730726  19740917  Applied Materials Inc  Temperature controlled profiling heater 
US4358822A (en)  19760804  19821109  Sanchez Juan M  Adaptivepredictive control system 
US4255133A (en)  19780410  19810310  Hitachi, Ltd.  Method for controlling furnace temperature of multizone heating furnace 
US4349869A (en)  19791001  19820914  Shell Oil Company  Dynamic matrix control method 
EP0037579A2 (en)  19800407  19811014  Juan Martin Sanchez  Adaptivepredictive control method and adaptivepredictive control system 
US4714988A (en)  19820326  19871222  Kabushiki Kaisha Toshiba  Feedforward feedback control having predictive disturbance compensation 
US4639853A (en)  19830603  19870127  Omron Tateisi Electronics Co.  Timediscrete adaptive switching onoff controller 
US4616308A (en)  19831115  19861007  Shell Oil Company  Dynamic process control 
US4688180A (en)  19841219  19870818  Ohkura Electric Co., Ltd.  Patternswitching temperature control apparatus 
US4720807A (en)  19850520  19880119  Vacuum General, Inc.  Adaptive pressure control system 
US4694390A (en)  19850628  19870915  Electric Power Research Institute, Inc.  Microprocessorbased control and diagnostic system for motor operated valves 
US4680451A (en)  19850729  19870714  A. G. Associates  Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers 
US4634946A (en)  19851002  19870106  Westinghouse Electric Corp.  Apparatus and method for predictive control of a dynamic system 
US4761538A (en)  19851121  19880802  Dainippon Screen Mfg. Co., Ltd.  Method and apparatus for controlling the temperature of a radiantly heated object 
US4736316A (en)  19860806  19880405  Chevron Research Company  Minimum time, optimizing and stabilizing multivariable control method and system using a constraint associated control code 
US4769766A (en)  19860911  19880906  Tung Hsien Hsin  Robust model reference controller 
US4975561A (en)  19870618  19901204  Epsilon Technology Inc.  Heating system for substrates 
US4904912A (en)  19871009  19900227  Nobuo Yamamoto  Control mechanism employing internal model coordination feedforward method 
US4959767A (en)  19881123  19900925  Elsag International B.V.  Parameter estimation technique for closed loop system 
US5032977A (en)  19890613  19910716  Elsag International B.V.  System for modeling and control for delignification of pulping 
US5099442A (en)  19891104  19920324  Ohkura Electric Co., Ltd.  Furnace temperature control apparatus using adjustment input 
US5301101A (en)  19900621  19940405  Honeywell Inc.  Receding horizon based adaptive control having means for minimizing operating costs 
US5291514A (en)  19910715  19940301  International Business Machines Corporation  Heater autotone control apparatus and method 
CA2054423A1 (en)  19910809  19930210  Robert J. Schurko  Adaptive control for reheat furnace 
US5488561A (en)  19920819  19960130  Continental Controls, Inc.  Multivariable process control method and apparatus 
US5790750A (en)  19931029  19980804  Applied Materials, Inc.  Profiled substrate heating utilizing a support temperature and a substrate temperature 
US5660472A (en)  19941219  19970826  Applied Materials, Inc.  Method and apparatus for measuring substrate temperatures 
US5755511A (en)  19941219  19980526  Applied Materials, Inc.  Method and apparatus for measuring substrate temperatures 
EP0829784A1 (en)  19960912  19980318  Applied Materials, Inc.  Adaptive temperature controller and method of operation 
US5793022A (en)  19960912  19980811  Applied Materials, Inc.  Adaptive temperture controller and method of operation 
NonPatent Citations (23)
Title 

A. Karaduman et al.; "Nonlinear Model Predictive Temperature Control Of A Batch Polymerization Reactor"; ICHEMEAdvances in Process Control 4;XP002081211. 
A. Karaduman et al.; "Nonlinear Model Predictive Temperature Control Of A Batch Polymerization Reactor"; ICHEME—Advances in Process Control 4;XP002081211. 
Bruce P. Gibbs et al.; "Application Of Nonlinear ModelBased Predictive Control To Fossil Power Plants"; T354:20; Proceedings of the 30th IEEE Conference On Decision And Control, Dec. 1113, 1991, Metropole Hotel, Brighton, England; vol. 2 of 3; CH30767/91/100001850; 1991 IEEE. 
D. J. Cloud, et al., "Characteristic decomposition and the multivariable generalisation of predictive selftuning control," IEE Proceedings, vol. 135, Pt. D, No. 3, May 1988, pp. 165181. 
D.W. Clarke, et al., "Generalized Predictive ControlPart I. The Basic Algorithm," Automatica vol. 23, No. 2, pp. 137148, 1987. 
D.W. Clarke, et al., "Generalized Predictive ControlPart II. Extensions and Interpretations," Automatica, vol. 23, No. 2, pp. 149160, 1987. 
D.W. Clarke, et al., "Generalized Predictive Control—Part I. The Basic Algorithm," Automatica vol. 23, No. 2, pp. 137148, 1987. 
D.W. Clarke, et al., "Generalized Predictive Control—Part II. Extensions and Interpretations," Automatica, vol. 23, No. 2, pp. 149160, 1987. 
David W. Clarke, "Application of Generalized Predictive Control to Industrial Processes", IEEE, Control Systems Rajatine, vol. 8, pp. 4955, 1988. 
Deng Xiaosong et al.; "RealTime Identification And Control Of A Continuous Stirred Tank Reactor With Neural Network"; XP002081212; 078032081Jun. 1995; 1995 IEEE. 
F. Lebourgeois, "IDCOM Applications and Experiences on a PVC Production Plants", RhonePoulenc Industries, StFons, France, FA9C. 
F. Roozeboom, et al., "Rapid thermal processing systems: A review with emphasis on temperature control", J.Vac.Sci. Technol. B 8 (6), Nov./Dec. 1990, pp. 12491259. 
J. Bordeneuve et al.; "Longrange predictive control of a rapid thermal processor"; XP002081214; Int. J. Systems SCI. 1991; vol. 22, No. 12.23772391. 
J. Richalet, et al., "Model Predictive Heuristic Control: Applications to Industrial Processes", Automatica, vol. 14, pp. 413428, 1978. 
J.A. Rossiter, et al., "Application of generalised predictive control to a boilerturbine unit for electricity generation". 
J.C. Engrand, "Applications of Multivariable Control in a Refinery and Implementation on a Dedicated Minicomputer," C.F.R. Raffinerie de Normandie, Harfleur, France, FA9D. 
Kwaku O. Temeng et al.; "Model predictive control of an industrial packed bed reactor using neural networks"; Butterworth Heinemann; J. Proc. Cont. vol. 5, No. 1.; 1995 Elsevier Science Ltd. 
Mohammed Douas, et al., "Adaptive Predictive Control of the First Spanish Installation for the Official Approval of Nuclear Equipment," Presented at the Cambridge Workshop on "Inductrial Applications of Model Based Predictive Control," Jul. 67, 1992. 
Robin De Keyser, et al., "Opportunities for Model Based Predictive Control in Semiconductor Processing Industry," presented at seminar in Brussels, Belgium, Sep. 2425, 1996. 
S.L. Shah, et al., "Multivariable adaptive control without a prior knowledge of the delay matrix," Systems & Control Letters 9 (1987) pp. 295306. 
Terence Breedijk et al.; "A Model Predictive Controller for Multivariable Temperature Control in Rapid Thermal Processing"; Proceedings of the 1993 American Control Conference at The Westlin St. Francis Hotel, San Francisco, California; Jun. 24, 1993; vol. 3 of 3; Publication Date Feb. 6, 1993. 
V.R. Karla et al.; "Neuralnetworkbased Model Predictive Control: A Case Study"; XP002081213; 0818671742/95; 1995 IEEE. 
William L. Brogan, et al., "Control Systems," Systems Chapter X, Section 93, Electrical Engineering Handbook, Richard C. Dorf, EditorinChief, 1993, pp. 20992153. 
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US6491757B2 (en) *  19950901  20021210  Asm America, Inc.  Wafer support system 
US6343183B1 (en) *  19950901  20020129  Asm America, Inc.  Wafer support system 
US20020046143A1 (en) *  19951003  20020418  Eder Jeffrey Scott  Method of and system for evaluating cash flow and elements of a business enterprise 
US6373033B1 (en)  19960131  20020416  Asm America, Inc.  Modelbased predictive control of thermal processing 
US20030018399A1 (en) *  19960506  20030123  Havener John P.  Method for optimizing a plant with multiple inputs 
US6438430B1 (en) *  19960506  20020820  Pavilion Technologies, Inc.  Kiln thermal and combustion control 
US9329582B2 (en) *  19960506  20160503  Rockwell Automation Technologies, Inc.  Method and apparatus for minimizing error in dynamic and steadystate processes for prediction, control, and optimization 
US20130055021A1 (en) *  19960506  20130228  Rockwell Automation Technologies, Inc.  Method and apparatus for minimizing error in dynamic and steadystate processes for prediction, control, and optimization 
US7139619B2 (en)  19960506  20061121  Pavilion Technologies, Inc.  Kiln free lime control 
US20030014131A1 (en) *  19960506  20030116  Havener John P.  Method for optimizing a plant with multiple inputs 
US7110834B2 (en)  19960506  20060919  Pavilion Technologies, Inc.  Kiln thermal and combustion control 
US20060100720A1 (en) *  19960506  20060511  Pavilion Technologies, Inc.  Kiln free lime control 
US20040059441A1 (en) *  19960506  20040325  Martin Gregory D.  Kiln thermal and combustion control 
US6950711B2 (en) *  19960506  20050927  Pavilion Technologies  Method for optimizing a plant with multiple inputs 
US20040210509A1 (en) *  19970106  20041021  Eder Jeff Scott  Automated method of and system for identifying, measuring and enhancing categories of value for a value chain 
US20040172319A1 (en) *  19970106  20040902  Eder Jeff Scott  Value chain system 
US20080004922A1 (en) *  19970106  20080103  Jeff Scott Eder  Detailed method of and system for modeling and analyzing business improvement programs 
US20010034686A1 (en) *  19971210  20011025  Eder Jeff Scott  Method of and system for defining and measuring the real options of a commercial enterprise 
US6401003B1 (en) *  19971230  20020604  Samsung Electronics Co., Ltd.  Alarm system for semiconductor device fabrication facility 
US20040215495A1 (en) *  19990416  20041028  Eder Jeff Scott  Method of and system for defining and measuring the elements of value and real options of a commercial enterprise 
US6694289B1 (en) *  19990701  20040217  International Business Machines Corporation  Fast simulation method for single and coupled lossy lines with frequencydependent parameters based on triangle impulse responses 
US6470239B1 (en)  19990923  20021022  Kic Thermal Profiling  Method for maximizing throughput of a part in a conveyorized thermal processor 
US6453219B1 (en)  19990923  20020917  Kic Thermal Profiling  Method and apparatus for controlling temperature response of a part in a conveyorized thermal processor 
US6560514B1 (en)  19990923  20030506  Kic Thermal Profiling  Method and apparatus for optimizing control of a part temperature in conveyorized thermal processor 
US20040088239A1 (en) *  19991020  20040506  Eder Jeff S.  Automated method of and system for identifying, measuring and enhancing categories of value for a valve chain 
US6469284B1 (en) *  19991125  20021022  Nec Corporation  Lamp annealer and method for controlling processing temperature thereof 
US6522990B1 (en)  19991203  20030218  General Electric Company  Methods and apparatus for reducing temperature overshoot 
US6703592B2 (en)  20000201  20040309  Asm America, Inc.  System of controlling the temperature of a processing chamber 
US6465761B2 (en) *  20000724  20021015  Asm America, Inc.  Heat lamps for zone heating 
US20060184449A1 (en) *  20001017  20060817  Eder Jeff S  A risk management system for securities 
US20090132448A1 (en) *  20001017  20090521  Jeffrey Scott Eder  Segmented predictive model system 
US8185486B2 (en)  20001017  20120522  Asset Trust, Inc.  Segmented predictive model system 
US20080288394A1 (en) *  20001017  20081120  Jeffrey Scott Eder  Risk management system 
US8694455B2 (en)  20001017  20140408  Asset Reliance, Inc.  Automated risk transfer system 
US20090070182A1 (en) *  20001017  20090312  Jeffrey Scott Eder  Organization activity management system 
US20060143115A1 (en) *  20001017  20060629  Eder Jeffrey S  Enterprise risk management system 
US6819963B2 (en) *  20001206  20041116  Advanced Micro Devices, Inc.  Runtorun control method for proportionalintegralderivative (PID) controller tuning for rapid thermal processing (RTP) 
US20020128805A1 (en) *  20001226  20020912  Insyst Intelligent Systems Ltd.  Model predictive control (MPC) system using DOE based model 
US7092863B2 (en) *  20001226  20060815  Insyst Ltd.  Model predictive control (MPC) system using DOE based model 
US6911628B1 (en) *  20010125  20050628  Yamatake Corporation  Control system and control unit 
US6606537B1 (en) *  20010419  20030812  Kic Thermal Profiling  Method for correcting process temperature profile in a multizone thermal processor 
US20040195737A1 (en) *  20010516  20041007  Arjen Storm  Method and device for heat treating substrates 
US6964751B2 (en)  20010516  20051115  Asm International N.V.  Method and device for heat treating substrates 
US6746237B2 (en)  20010516  20040608  Asm International N.V.  Method and device for heat treating substrates 
US6977359B2 (en)  20010518  20051220  Tokyo Electron Limited  Method and device for vacuum treatment 
US20040144770A1 (en) *  20010518  20040729  Shigeru Kasai  Method and device for vacuum treatment 
WO2002097540A1 (en) *  20010525  20021205  Parametric Optimization Solutions Ltd.  Improved process control 
US20050107895A1 (en) *  20010525  20050519  Efstratios Pistikopoulos  Process control 
US7433743B2 (en)  20010525  20081007  Imperial College Innovations, Ltd.  Process control using coordinate space 
US20030009241A1 (en) *  20010616  20030109  Klaus Kruger  Openloop and closedloop control method, and a control device for starting up and shutting down a process component of a technical process 
US6917838B2 (en) *  20010616  20050712  Abb Research Ltd.  Openloop and closedloop control method, and a control device for starting up and shutting down a process component of a technical process 
US20030028266A1 (en) *  20010629  20030206  Robert Jacques  Tuning control parameters of vibration reduction and motion control systems for fabrication equipment and robotic systems 
US7158840B2 (en) *  20010629  20070102  Cymer, Inc.  Tuning control parameters of vibration reduction and motion control systems for fabrication equipment and robotic systems 
US20030083757A1 (en) *  20010914  20030501  Card Jill P.  Scalable, hierarchical control for complex processes 
US6810291B2 (en) *  20010914  20041026  Ibex Process Technology, Inc.  Scalable, hierarchical control for complex processes 
US20050016704A1 (en) *  20011019  20050127  Taisto Huhtelin  Method and apparatus for controlling the operation of stock preparation of a paper machine 
US20030100974A1 (en) *  20011129  20030529  Alvarez Eduardo Gallestey  Optimal operation of a power plant 
US7426456B2 (en) *  20011129  20080916  Abb Research Ltd  Optimal operation of a power plant 
US7493470B1 (en)  20011207  20090217  Arc International, Plc  Processor apparatus and methods optimized for control applications 
US20040215522A1 (en) *  20011226  20041028  Eder Jeff Scott  Process optimization system 
US20030125905A1 (en) *  20011228  20030703  Patanian John Jacob  Method and apparatus for assessing performance of combined cycle powerplants 
US20030125906A1 (en) *  20011228  20030703  Guaglardi Paul A.  Method and apparatus for assessing the impact of individual parts of a gas turbine component on the overall thermal performance of a gas turbine 
US6785633B2 (en) *  20011228  20040831  General Electric Company  Method and apparatus for assessing performance of combined cycle powerplants 
US6596973B1 (en)  20020307  20030722  Asm America, Inc.  Pyrometer calibrated wafer temperature estimator 
US6924463B2 (en)  20020307  20050802  Asm America, Inc.  Pyrometer calibrated wafer temperature estimator 
US7427329B2 (en)  20020508  20080923  Asm International N.V.  Temperature control for single substrate semiconductor processing reactor 
US20030209327A1 (en) *  20020508  20031113  Vladamir Kuznetsov  Temperature control for single substrate semiconductor processing reactor 
US6843201B2 (en)  20020508  20050118  Asm International Nv  Temperature control for single substrate semiconductor processing reactor 
US20040148037A1 (en) *  20020725  20040729  Nathaniel Frampton  System and method for model based control of a mechanical device 
US20050077280A1 (en) *  20020809  20050414  Ptak John C.  LED heat lamp arrays for CVD heating 
US20070116443A1 (en) *  20020809  20070524  Asm America, Inc.  Led heat lamp arrays for cvd heating 
US7173216B2 (en)  20020809  20070206  Asm America, Inc.  LED heat lamp arrays for CVD heating 
US6818864B2 (en)  20020809  20041116  Asm America, Inc.  LED heat lamp arrays for CVD heating 
US20080256069A1 (en) *  20020909  20081016  Jeffrey Scott Eder  Complete Context(tm) Query System 
US20060059028A1 (en) *  20020909  20060316  Eder Jeffrey S  Context search system 
US20090171740A1 (en) *  20020909  20090702  Jeffrey Scott Eder  Contextual management system 
US20080027769A1 (en) *  20020909  20080131  Jeff Scott Eder  Knowledge based performance management system 
US6642486B1 (en) *  20021107  20031104  Illinois Tool Works, Inc.  Method and apparatus for replicating heat profile of infrared oven 
US20040098145A1 (en) *  20021114  20040520  Liu Zhenduo  Hybrid cascade modelbased predictive control system 
US7006900B2 (en)  20021114  20060228  Asm International N.V.  Hybrid cascade modelbased predictive control system 
US20090313041A1 (en) *  20021210  20091217  Jeffrey Scott Eder  Personalized modeling system 
US20040181300A1 (en) *  20030311  20040916  Clark Robert L.  Methods, apparatus and computer program products for adaptively controlling a system by combining recursive system identification with generalized predictive control 
US20070022062A1 (en) *  20030527  20070125  Ralph Grothmann  Method computer program with program code means, and computer program product for determining a future behavior of a dynamic system 
US7464061B2 (en) *  20030527  20081209  Siemens Aktiengesellschaft  Method, computer program with program code means, and computer program product for determining a future behavior of a dynamic system 
US20060224255A1 (en) *  20030821  20061005  Masato Tanaka  Pid parameter adjustment device 
US7346403B2 (en) *  20030821  20080318  Yamatake Corporation  Pid parameter adjustment device 
US20050044892A1 (en) *  20030828  20050303  George Stephan P.  Method and apparatus for heating glass sheets 
US20060141808A1 (en) *  20031031  20060629  Asm International N.V., A Netherlands Corporation  Method for the heat treatment of substrates 
US7022627B2 (en)  20031031  20060404  Asm International N.V.  Method for the heat treatment of substrates 
US7410355B2 (en)  20031031  20080812  Asm International N.V.  Method for the heat treatment of substrates 
US6940047B2 (en)  20031114  20050906  Asm International N.V.  Heat treatment apparatus with temperature control system 
US20050115945A1 (en) *  20031114  20050602  Kesteren Tom A.V.  Heat treatment apparatus with temperature control system 
US20090018891A1 (en) *  20031230  20090115  Jeff Scott Eder  Market value matrix 
US20050145150A1 (en) *  20031231  20050707  Mortell Heather S.  Process for making a garment having hanging legs 
US7203555B2 (en) *  20040514  20070410  University Of Delaware  Predictive regulatory controller 
US7486998B2 (en)  20040514  20090203  University Of Delaware  Predictive regulatory controller 
US20070191971A1 (en) *  20040514  20070816  Ogunnaike Babatunde A  Predictive regulatory controller 
US20050256593A1 (en) *  20040514  20051117  Ogunnaike Babatunde A  Predictive regulatory controller 
US20100114793A1 (en) *  20040601  20100506  Jeffrey Scott Eder  Extended management system 
US20060020563A1 (en) *  20040726  20060126  Coleman Christopher R  Supervised neural network for encoding continuous curves 
US20070036467A1 (en) *  20040726  20070215  Coleman Christopher R  System and method for creating a high resolution material image 
US20060017740A1 (en) *  20040726  20060126  Coleman Christopher R  Diurnal variation of geospecific terrain temperatures in realtime infrared sensor simulation 
US20060018566A1 (en) *  20040726  20060126  Coleman Christopher R  System and method for adding spatial frequency into an image 
US20070291818A1 (en) *  20040809  20071220  Applied Materials Inc.  Method Of Determining Thermal Property Of Substrate And Method Of Deciding Heat Treatment Condition 
US8308350B2 (en)  20040809  20121113  Applied Materials, Inc.  Method of determining thermal property of substrate and method of deciding heat treatment condition 
US20060054088A1 (en) *  20040914  20060316  Sumco Corporation  Vapor phase epitaxial growth apparatus and semiconductor wafer production method 
US7217670B2 (en)  20041122  20070515  Asm International N.V.  Dummy substrate for thermal reactor 
US20060110944A1 (en) *  20041122  20060525  Asm International N.V.  Dummy substrate for thermal reactor 
US7451017B2 (en)  20050126  20081111  Siemens Building Technologies, Inc.  Energy and cost savings calculation system 
US20070244604A1 (en) *  20050126  20071018  Siemens Corporation  Energy and cost savings calculation system 
US20060167591A1 (en) *  20050126  20060727  Mcnally James T  Energy and cost savings calculation system 
US8713025B2 (en)  20050331  20140429  Square Halt Solutions, Limited Liability Company  Complete context search system 
US20060272772A1 (en) *  20050602  20061207  Applied Materials, Inc.  Vacuum reaction chamber with xlamp heater 
US20060289795A1 (en) *  20050602  20061228  Dubois Dale R  Vacuum reaction chamber with xlamp heater 
US7777197B2 (en) *  20050602  20100817  Applied Materials, Inc.  Vacuum reaction chamber with xlamp heater 
US20110040631A1 (en) *  20050709  20110217  Jeffrey Scott Eder  Personalized commerce system 
US7672739B2 (en) *  20050811  20100302  University Of South Florida  System for multiresolution analysis assisted reinforcement learning approach to runbyrun control 
US20070260346A1 (en) *  20050811  20071108  University Of South Florida  System for Multiresolution Analysis Assisted Reinforcement Learning Approach to RunByRun Control 
US7856281B2 (en)  20050930  20101221  FisherRosemount Systems, Inc.  Online adaptive model predictive control in a process control system 
US20090143872A1 (en) *  20050930  20090604  FisherRosemount Systems, Inc.  OnLine Adaptive Model Predictive Control in a Process Control System 
US7451004B2 (en) *  20050930  20081111  FisherRosemount Systems, Inc.  Online adaptive model predictive control in a process control system 
US20070078529A1 (en) *  20050930  20070405  FisherRosemount Systems, Inc.  Online adaptive model predictive control in a process control system 
US20070239581A1 (en) *  20060402  20071011  Eder Jeff S  A data processing framework for financial services 
US8498915B2 (en)  20060402  20130730  Asset Reliance, Inc.  Data processing framework for financial services 
US20080077257A1 (en) *  20060922  20080327  Peterson Tod J  Model predictive controller solution analysis process 
US7949417B2 (en)  20060922  20110524  Exxonmobil Research And Engineering Company  Model predictive controller solution analysis process 
US7451054B2 (en) *  20070130  20081111  Tokyo Electron Limited  Method of using a wafertemperaturedependent profile library 
US20080183413A1 (en) *  20070130  20080731  Tokyo Electron Limited  Method of Using a WaferTemperatureDependant Profile Library 
US20090034948A1 (en) *  20070720  20090205  Ushio Denki Kabushiki Kaisha  Light emitting type heat treatment apparatus 
US8315510B2 (en) *  20070720  20121120  Ushio Denki Kabushiki Kaisha  Light emitting type heat treatment apparatus 
US8861102B2 (en) *  20070814  20141014  Asml Netherlands B.V.  Lithographic apparatus and thermal optical manipulator control method 
US20110273682A1 (en) *  20070814  20111110  Asml Netherlands B.V.  Lithographic Apparatus and Thermal Optical Manipulator Control Method 
US20090147819A1 (en) *  20071207  20090611  Asm America, Inc.  Calibration of temperature control system for semiconductor processing chamber 
US8047706B2 (en)  20071207  20111101  Asm America, Inc.  Calibration of temperature control system for semiconductor processing chamber 
US20090287320A1 (en) *  20080513  20091119  Macgregor John  System and Method for the Model Predictive Control of Batch Processes using Latent Variable Dynamic Models 
US8554389B2 (en)  20080530  20131008  Apple Inc.  Thermal management techniques in an electronic device 
US8315746B2 (en) *  20080530  20121120  Apple Inc.  Thermal management techniques in an electronic device 
US20090299543A1 (en) *  20080530  20091203  Apple Inc.  Thermal management techniques in an electronic device 
US9546914B2 (en)  20081013  20170117  Apple Inc.  Method for estimating temperature at a critical point 
US8439667B2 (en) *  20081125  20130514  Utc Fire & Security Corporation  Oxygen trim controller tuning during combustion system commissioning 
US20110223548A1 (en) *  20081125  20110915  Utc Fire & Security Corporation  Oxygen trim controller tuning during combustion system commissioning 
US9758871B2 (en) *  20081210  20170912  Sumco Techxiv Corporation  Method and apparatus for manufacturing epitaxial silicon wafer 
US20100143579A1 (en) *  20081210  20100610  Sumco Techxiv Corporation  Method and apparatus for manufacturing epitaxial silicon wafer 
US9431281B2 (en) *  20091225  20160830  Canon Anelva Corporation  Temperature control method for substrate heat treatment apparatus, semiconductor device manufacturing method, temperature control program for substrate heat treatment apparatus, and recording medium 
US20120219921A1 (en) *  20091225  20120830  Canon Anelva Corporation  Temperature control method for substrate heat treatment apparatus, semiconductor device manufacturing method, temperature control program for substrate heat treatment apparatus, and recording medium 
US20140032010A1 (en) *  20120725  20140130  Broadcom Corporation  System and Method for Supervised Thermal Management 
US9158313B2 (en) *  20120725  20151013  Broadcom Corporation  System and method for supervised thermal management 
US20140088787A1 (en) *  20120924  20140327  Nestec S.A.  Methods and systems for energy balance control for feed flow and feed temperature disturbances 
US9791870B2 (en) *  20120924  20171017  Nestec S.A.  Methods and systems for energy balance control for feed flow and feed temperature disturbances 
US20140365413A1 (en) *  20130606  20141211  Qualcomm Incorporated  Efficient implementation of neural population diversity in neural system 
US20150148981A1 (en) *  20131124  20150528  Qualcomm Incorporated  System and method for multicorrelative learning thermal management of a system on a chip in a portable computing device 
US9476584B2 (en)  20131212  20161025  General Electric Company  Controlling boiler drum level 
US20160365891A1 (en) *  20131213  20161215  Sharp Kabushiki Kaisha  Basestation device, terminal device, transmission method, and reception method 
US20150300888A1 (en) *  20140421  20151022  National Taiwan University  Temperature prediction system and method thereof 
WO2016207012A1 (en) *  20150626  20161229  Bayer Cropscience Ag  Method for controlling technical processes by means of linearization 
CN105751470B (en) *  20160323  20171212  广西科技大学  An injection machine in real time temperature control method 
CN105751470A (en) *  20160323  20160713  广西科技大学  Realtime temperature control method for injection molding machine 
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