Connect public, paid and private patent data with Google Patents Public Datasets

Structure for absorption of hydrogen in a package

Download PDF

Info

Publication number
US5861665A
US5861665A US08853735 US85373597A US5861665A US 5861665 A US5861665 A US 5861665A US 08853735 US08853735 US 08853735 US 85373597 A US85373597 A US 85373597A US 5861665 A US5861665 A US 5861665A
Authority
US
Grant status
Grant
Patent type
Prior art keywords
package
hydrogen
layer
member
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08853735
Inventor
Gustav Edward Derkits, Jr.
John Lopata
Franklin Richard Nash
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies General IP (Singapore) Pte Ltd
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Shape of the housing
    • H01S5/02216Butterfly-type, i.e. the housing is generally flat
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02204Mountings; Housings including a getter material to absorb contaminations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02236Mounts or sub-mounts
    • H01S5/02248Mechanically integrated components on a mount or an optical microbench, e.g. optical components, detectors, etc.
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters

Abstract

Disclosed is an optical and/or microelectronics hermetic package which includes a member for absorbing hydrogen from the internal package ambient. The member includes a first layer which forms a hydride and, formed thereover, a second layer which forms solvated hydrogen upon exposure to molecular hydrogen in the package. The second layer acts as a one way valve for transporting hydrogen to the first layer which locks up the hydrogen.

Description

FIELD OF THE INVENTION

This invention relates to optical and/or microelectronics hermetic packages, and in particular, to a structure for reduction or elimination of hydrogen from the package.

BACKGROUND OF THE INVENTION

Hydrogen is a common cause of damage and failure of optical and microelectronic components and circuits. For example, titanium/platinum/gold metallization used in a wide variety of optical and microelectronics packages and hybrid circuits is susceptible to attack. This damage can be significant especially when the components are in an hermetic package, since the packaging material and packaged components can emit hydrogen over a period of time. Hydrogen from the package material can ultimately amount to 1-3 percent of the total pressure inside the package. The problem is particularly troublesome in the area of submarine lightwave systems where the packages cannot be easily repaired or replaced.

It is, therefore, desirable to provide a structure within a package which will reduce or eliminate gaseous hydrogen from the package interior.

SUMMARY OF THE INVENTION

The invention is an hermetic package which includes a housing for enclosing components. Within the housing is a member, separate from the components, which comprises a first layer of a material which forms a hydride when subject to solvated hydrogen, and a second layer formed over the first layer, the second layer comprising a noble metal material which forms solvated hydrogen when subject to molecular hydrogen. The second layer prevents the formation of a surface oxide and acts as a one way valve for the transport of hydrogen from the package ambient to the first layer, which serves to lock-up the hydrogen as a hydride.

BRIEF DESCRIPTION OF THE DRAWING

These and other features of the invention are delineated in detail in the following description. In the drawing:

FIG. 1 is a top view, partly cut away, of a package which includes the present invention in accordance with one embodiment;

FIG. 2 is a side view, partly cut away, of the package shown in FIG. 1;

FIG. 3 is a cross sectional view of a member for the absorption of hydrogen in accordance with the same embodiment; and

FIG. 4 is an energy diagram illustrating operation of the invention in accordance with the same embodiment.

It will be appreciated that, for purposes of illustration, these figures are not necessarily drawn to scale.

DETAILED DESCRIPTION

Referring now to the drawings, in which like reference numerals identify similar or identical elements, FIGS. 1 and 2 illustrate a typical optoelectronics package which includes the invention. In this example, the package, 10, is an optoelectronics package which includes a housing, 11, defining a cavity, 30, for the optoelectronics components. The optoelectronics components include a laser, 12, a spherical lens, 13, for focusing the laser light, and a photodetector,14, for monitoring the laser light. The components, 12-14, are mounted on a substrate, 15, which is typically silicon. The substrate, in turn, is mounted to the bottom surface of the cavity, 30.

As illustrated in FIG. 1, the silicon substrate, 15, includes metallization, 16, on its surface for providing electrical contact to the components, 12 and 14. The metallization, 16, is wire bonded to metallization, 17, on a ledge in the cavity so that the components can be electrically contacted to the outside world through pins, e.g., 18, extending from the sides of the package. The metallization, 16 and 17, is typically made of layers of titanium/platinum/gold. The cavity, 30, is hermetically sealed by means of a lid, 19, which is bonded to the top surface of the housing by solder, 20 as shown in FIG. 2. The laser, 12, is optically coupled to an optical fiber, 22, through an aperture, 21, in a wall, 23, in the cavity,30.

Although the cavity, 30, is hermetically sealed by lid, 19, the metallization, 16 and 17, can be subject to delamination by hydrogen gas since the material of the housing, 11, can itself emit hydrogen gas. In some cases, the amount of hydrogen gas within the package ambient can be as high as 1-3 percent of the total internal pressure.

In order to reduce the amount of hydrogen gas in the cavity, 30, the cavity includes a member, 31, which in this example is attached to the inner surface of the lid, 19, but could be mounted anywhere in the cavity. This member is shown in more detail in FIG. 3. In particular, the member, 31, includes a layer, 32, which is exposed to the package ambient. This layer is preferably a noble metal such as platinum, which typically has a thickness within the range 50 nanometers to 500 nanometers. The layer, 32, is formed on another layer or substrate, 33, typically by vacuum evaporation, sputtering, or other means known to those skilled in the art. The layer, 33, is a hydride forming material such as titanium or zirconium, and typically has a thickness greater than 200 nanometers. The bilayer structure is bonded to the inner surface of the lid, 19, by means of a bonding layer, 34, such as solder. Alternatively, the two layers, 32 and 33, can be deposited onto the lid by standard techniques, such as vacuum evaporation, sputtering, or other means known to those skilled in the art. In order to achieve significant absorption of hydrogen as described below, it is recommended that the member, 31, occupy an area of at least one percent of the interior package area or greater than 10x the total area of exposed at-risk material in the devices to be protected, whichever is the greater. ("At risk" material is the material in the package which is susceptible to hydrogen damage.) In a typical single-circuit or small hybrid electrical package, the area may be 0.1-0.4 cm2.

In operation, hydrogen from the package ambient is adsorbed on the surface of the platinum layer, 32, and is transmitted to the interior of that layer by conversion of molecular hydrogen to solvated hydrogen within the metal structure. This reaction is endothermic, and in the case of platinum, requires approximately 0.5 eV per H atom as illustrated in the energy diagram of FIG. 4. The solvated hydrogen moves into the titanium layer,33, by an exothermic reaction which releases approximately 1.1 eV per atom. The solvated hydrogen then precipitates as titanium hydride in another exothermic reaction which releases approximately 0.2 eV per atom. The exothermic reactions serve to lock up the hydrogen in the titanium layer, 33, and prevent its return to the platinum layer,32, due to the presence of the energy barrier created thereby. Use of the noble metal, 32, prevents the formation of a surface oxide on the reactive (hydride-forming) metal, 33, thereby keeping the surface "open" to admit hydrogen. It may also promote the movement of hydrogen into the hydride-forming metal by the presence of an energy barrier, but that is a secondary function. Thus, the noble metal layer,32 acts as a one way valve for the admission of hydrogen into the hydride forming layer,33.

The element, 31, was incorporated into several standard pump laser packages by depositing the metals on the package lid and hermetically sealing the package so that the internal ambient was primarily N 2. The packages were then aged for 1840 hours at 100 degrees C. These packages had no detectable hydrogen and no significant amount of water vapor formed within the package housing.

Various additional modifications will become apparent to those skilled in the art. For example, the hydride forming layer can be an intermetallic compound or alloy such as Iron-Titanium alloys. In such cases, the alloy could be placed in a vacuum chamber where the surface oxide is sputtered off and Pt or Pd deposited on the surface. The resulting member could be soldered or mechanically attached to one of the package inner walls or to the lid. Further, while the layer, 32, was platinum, a palladium layer is also preferred.

Claims (10)

The invention claimed is:
1. An hermetic package comprising:
a housing for enclosing components; and
a member within the housing and separate from the components, said member comprising a first layer of a material which forms a hydride when subjected to solvated hydrogen, and a second layer formed over the first layer, the second layer comprising a noble metal material which forms solvated hydrogen when subjected to molecular hydrogen and prevents formation of an oxide on the surface of the member.
2. A package according to claim 1 wherein the first layer comprises titanium and the second layer comprises platinum.
3. A package according to claim 1 wherein the first layer has a thickness greater than 200 nanometers, and the second layer has a thickness within the range 50 nanometers to 500 nanometers.
4. A package according to claim 1 wherein the area of the member is at least 1 percent of the interior package area or greater than 10x the total area of exposed at-risk material in the devices to be protected, whichever is the greater.
5. A package according to claim 1 wherein the package includes a lid for sealing the interior of the housing, and the member is mounted to an inner surface of the lid.
6. A package according to claim 5, wherein the member is bonded to the lid by solder.
7. A package according to claim 5 wherein the layers are deposited on the inner surface of the lid.
8. A package according to claim 1 wherein the components include optical and/or microelectronics components.
9. A package according to claim 1 wherein the materials of the layers are such that the transfer of hydrogen from the first layer to the second is endothermic.
10. A package according to claim 1 wherein the member is mechanically affixed to an interior surface of the package.
US08853735 1997-05-13 1997-05-13 Structure for absorption of hydrogen in a package Expired - Lifetime US5861665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08853735 US5861665A (en) 1997-05-13 1997-05-13 Structure for absorption of hydrogen in a package

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08853735 US5861665A (en) 1997-05-13 1997-05-13 Structure for absorption of hydrogen in a package
DE1998609630 DE69809630D1 (en) 1997-05-13 1998-05-12 Structure for absorption of hydrogen in a housing
EP19980303680 EP0878845B1 (en) 1997-05-13 1998-05-12 Structure for absorption of hydrogen in a package
DE1998609630 DE69809630T2 (en) 1997-05-13 1998-05-12 Structure for absorption of hydrogen in a housing
JP12997598A JPH10322044A (en) 1997-05-13 1998-05-13 Hermetic package

Publications (1)

Publication Number Publication Date
US5861665A true US5861665A (en) 1999-01-19

Family

ID=25316764

Family Applications (1)

Application Number Title Priority Date Filing Date
US08853735 Expired - Lifetime US5861665A (en) 1997-05-13 1997-05-13 Structure for absorption of hydrogen in a package

Country Status (4)

Country Link
US (1) US5861665A (en)
JP (1) JPH10322044A (en)
DE (2) DE69809630D1 (en)
EP (1) EP0878845B1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110808A (en) * 1998-12-04 2000-08-29 Trw Inc. Hydrogen getter for integrated microelectronic assembly
US6203869B1 (en) 1996-11-12 2001-03-20 Thomas K. Dougherty Hydrogen getters and methods for fabricating sealed microelectronic packages employing same
US20030138656A1 (en) * 2002-01-07 2003-07-24 Sparks Douglas Ray Method of forming a reactive material and article formed thereby
US6703701B2 (en) * 1998-10-06 2004-03-09 Koninklijke Philips Electronics N.V. Semiconductor device with integrated circuit elements of group III-V comprising means for preventing pollution by hydrogen
US20050156159A1 (en) * 2004-01-12 2005-07-21 Mcdonald Mark E. Hydrogen vent for optoelectronic packages with resistive thermal device (RTD)
US20050253283A1 (en) * 2004-05-13 2005-11-17 Dcamp Jon B Getter deposition for vacuum packaging
US20090215610A1 (en) * 2005-02-17 2009-08-27 Saes Getters S.P.A. Flexible multi-layered getter

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2956521B1 (en) * 2010-02-16 2012-08-17 Thales Sa Device comprising electric, electronic components, electromechanical or electro-optical, a reduced sensitivity at low dose rate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769345A (en) * 1987-03-12 1988-09-06 Olin Corporation Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
US5491361A (en) * 1994-10-14 1996-02-13 The Aerospace Corporation Hydrogen out venting electronic package

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7812244A (en) * 1978-12-18 1980-06-20 Philips Nv Halogen Bulb.
GB8623296D0 (en) * 1986-09-27 1986-10-29 Emi Plc Thorn Hydrogen getter
US5624598A (en) * 1995-04-18 1997-04-29 Shepodd; Timothy J. Materials for the scavanging of hydrogen at high temperatures
US6673400B1 (en) * 1996-10-15 2004-01-06 Texas Instruments Incorporated Hydrogen gettering system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769345A (en) * 1987-03-12 1988-09-06 Olin Corporation Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
US5491361A (en) * 1994-10-14 1996-02-13 The Aerospace Corporation Hydrogen out venting electronic package

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203869B1 (en) 1996-11-12 2001-03-20 Thomas K. Dougherty Hydrogen getters and methods for fabricating sealed microelectronic packages employing same
US6703701B2 (en) * 1998-10-06 2004-03-09 Koninklijke Philips Electronics N.V. Semiconductor device with integrated circuit elements of group III-V comprising means for preventing pollution by hydrogen
US6110808A (en) * 1998-12-04 2000-08-29 Trw Inc. Hydrogen getter for integrated microelectronic assembly
US6369442B1 (en) * 1998-12-04 2002-04-09 Trw Inc. Hydrogen getter for integrated microelectronic assembly
US6548889B2 (en) * 1998-12-04 2003-04-15 Trw Inc. Hydrogen getter for integrated microelectronic assembly
US20030138656A1 (en) * 2002-01-07 2003-07-24 Sparks Douglas Ray Method of forming a reactive material and article formed thereby
US6923625B2 (en) * 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby
US20050156159A1 (en) * 2004-01-12 2005-07-21 Mcdonald Mark E. Hydrogen vent for optoelectronic packages with resistive thermal device (RTD)
US7377961B2 (en) * 2004-01-12 2008-05-27 Intel Corporation Hydrogen vent for optoelectronic packages with resistive thermal device (RTD)
US20050253283A1 (en) * 2004-05-13 2005-11-17 Dcamp Jon B Getter deposition for vacuum packaging
US20090215610A1 (en) * 2005-02-17 2009-08-27 Saes Getters S.P.A. Flexible multi-layered getter
US8986569B2 (en) 2005-02-17 2015-03-24 Saes Getters, S.P.A. Flexible multi-layered getter

Also Published As

Publication number Publication date Type
EP0878845B1 (en) 2002-11-27 grant
EP0878845A2 (en) 1998-11-18 application
DE69809630T2 (en) 2003-10-09 grant
JPH10322044A (en) 1998-12-04 application
EP0878845A3 (en) 2001-07-11 application
DE69809630D1 (en) 2003-01-09 grant

Similar Documents

Publication Publication Date Title
US6888305B2 (en) Encapsulation structure that acts as a multilayer mirror
US6150719A (en) Amorphous hydrogenated carbon hermetic structure and fabrication method
US6534850B2 (en) Electronic device sealed under vacuum containing a getter and method of operation
US6323550B1 (en) Package for sealing an integrated circuit die
US6049132A (en) Multiple metallization structure for a reflection type liquid crystal display
US5022930A (en) Thin film photovoltaic panel and method
US6923625B2 (en) Method of forming a reactive material and article formed thereby
US8203207B2 (en) Electronic device packages and methods of formation
US7262436B2 (en) III-nitride semiconductor light emitting device having a silver p-contact
US5291572A (en) Article comprising compression bonded parts
US5405808A (en) Fluid-filled and gas-filled semiconductor packages
US20020043706A1 (en) Miniature Microdevice Package and Process for Making Thereof
US7045885B1 (en) Placement of absorbing material in a semiconductor device
US5851849A (en) Process for passivating semiconductor laser structures with severe steps in surface topography
US5130889A (en) Integrated circuit protection by liquid encapsulation
US6020628A (en) Optical component package with a hermetic seal
US5513198A (en) Packaging of high power semiconductor lasers
US20030071568A1 (en) Reduction of contamination of light emitting devices
US20090078956A1 (en) Package structure of photoelectronic device and fabricating method thereof
US20030062551A1 (en) Electrode structure including encapsulated adhesion layer
US6897551B2 (en) Support for microelectronic, microoptoelectronic or micromechanical devices
US4769345A (en) Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
US6693337B2 (en) Semiconductor photodetection device
US20070216300A1 (en) Organic opto-electronic device with environmentally protective barrier
US6593160B2 (en) Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power led chip

Legal Events

Date Code Title Description
AS Assignment

Owner name: LUCENT TECHNOLOGIES,INC., NEW JERSEY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DERKITS, GUSTAV EDWARD JR.;LOPATA, JOHN;NASH, FRANKLIN RICHARD;REEL/FRAME:008570/0843;SIGNING DATES FROM 19970508 TO 19970509

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: AGERE SYSTEMS INC., PENNSYLVANIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LUCENT TECHNOLOGIES INC.;REEL/FRAME:017555/0484

Effective date: 20010130

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12

AS Assignment

Owner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AG

Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:LSI CORPORATION;AGERE SYSTEMS LLC;REEL/FRAME:032856/0031

Effective date: 20140506

AS Assignment

Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AGERE SYSTEMS LLC;REEL/FRAME:035365/0634

Effective date: 20140804

AS Assignment

Owner name: AGERE SYSTEMS LLC, PENNSYLVANIA

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039

Effective date: 20160201

Owner name: LSI CORPORATION, CALIFORNIA

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039

Effective date: 20160201

AS Assignment

Owner name: BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:037808/0001

Effective date: 20160201

AS Assignment

Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BANK OF AMERICA, N.A., AS COLLATERAL AGENT;REEL/FRAME:041710/0001

Effective date: 20170119