Connect public, paid and private patent data with Google Patents Public Datasets

Semiconductor sensor manufactured through anodic-bonding process

Download PDF

Info

Publication number
US5528070A
US5528070A US08321829 US32182994A US5528070A US 5528070 A US5528070 A US 5528070A US 08321829 US08321829 US 08321829 US 32182994 A US32182994 A US 32182994A US 5528070 A US5528070 A US 5528070A
Authority
US
Grant status
Grant
Patent type
Prior art keywords
substrate
glass
bonding
diaphragm
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US08321829
Inventor
Sean S. Cahill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Meter Co Ltd
Original Assignee
Yazaki Meter Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Abstract

A semiconductor sensor comprising a semiconductor substrate and a glass substrate. The semiconductor substrate includes a support member having an opening centrally defined therein, a diaphragm positioned in the opening of the support member, and a flexible supporting means for supporting and coupling the diaphragm and the support member. The glass substrate includes a portion facing the diaphragm and the supporting means and at least one recess defined in this portion which faces the entirety of the supporting means. The glass substrate also includes a metal layer deposited on a surface of the glass substrate and a dielectric layer deposited on the metal layer such that the dielectric layer faces the diaphragm.

Description

This is a divisional of application No. 08/141,054 filed Oct. 26, 1993.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a semiconductor sensor consisting of a silicon wafer and a glass substrate and a method for manufacturing the same, whereby, when a silicon wafer having a diaphragm is bonded with a glass substrate through anodic bonding process, the glass substrate contains a dielectric material and a recess or a cavity so as to prevent a bond from occurring between the glass substrate and the silicon wafer.

2. Related Art

In FIG. 6, anodic-bonding process proceeds with the following steps. A silicon wafer 201 having a smooth surface 201a and a diaphragm 201b is bonded to a glass substrate 202 (for example, pyrex glass). After that, a unit containing the silicon wafer 201 and the glass substrate 202 is heated in the range of 300° C. -400° C. by a hot plate 204. Under this condition, when a negative voltage within 500-1000 V is applied to the glass substrate 202 by a negative electrode 203, a large electrostatic attracting force is generated between the silicon wafer 201 and the glass substrate 202 so that the chemical bonding occurs between the silicon wafer 201 and the glass substrate 202 at a boundary surface. However, in this voltage applying step, the diaphragm 201b serving as an undesired bonding portion at the time of performing the anodic bonding process is bonded to the glass substrate 202, because the large electrostatic attracting force is generated between the silicon wafer 201 and the glass substrate 202.

In view of this problem, for example, in Unexamined Japanese Utility Model Application No. sho. 3-88137, an oxide layer is formed on both sides of the diaphragm so as to prevent a bond from occurring between the diaphragm 201b and the glass substrate 202. However, if this structure is employed, it is difficult to ensure the sufficient sensitive characteristic.

SUMMARY OF THE INVENTION

In view of the forgoing problem, one object of the present invention is to provide a method for anodic-bonding of a silicon wafer to a glass substrate without bonding at an undesired portion defined therebetween.

Another object of the present invention is to provide a semiconductor sensor with a dielectric layer and a cavity without a bond occurs therebetween when anodic-bonding is applied.

According to one aspect of the preset invention, there is provided a semiconductor sensor comprising a semiconductor substrate including: a support member having a opening centrally defined therein; a diaphragm positioned in the opening of the support member; supporting means for supporting and coupling the diaphragms with the support member; a glass substrate having a cavity defined thereon in such a manner that the cavity is confronted to the supporting means, the glass substrate including: a metal layer deposited on a surface of the glass substrate; a dielectric layer deposited on the metal layer, the glass substrate being confronted to the diaphragms.

According to another aspect of the present invention, there is provided a method for bonding a silicon substrate and a glass substrate through anodic-bonding process, the method comprising the steps of: forming at least two holes onto the glass substrate; forming a recess on the glass substrate, the recess being confronted to an undesired bonding portion defined in the silicon substrate; depositing a metal layer onto the glass substrate with the predetermined pattern; depositing a dielectric layer onto the metal layer, the insulating layer covering substantially the whole surface of the metal layer; and bonding the glass substrate and the semiconductor material through a predetermined condition.

According to the present invention, the silicon substrate is bonded to the glass substrate through the anodic-bonding process without bonding the diaphragm or the corrugation such as undesired bonding portion onto the glass substrate.

According to the present invention, the silicon substrate contains the corrugation so that the displacement of the diaphragm with respect to the pressure is increased so as to obtain a increased travel distance per unit of applied force.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-4 are sectional views of a process used in anodic bonding of the present invention;

FIG. 5 is a sectional view of a semiconductor sensor of an example of the present invention; and

FIG. 6 is showing a diagram of the prior art anodic bonding process.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

A preferred embodiment of the present invention will now be described with reference with the drawings.

One example of a semiconductor sensor of the present invention is shown in FIG. 5. A silicon substrate 1 on which a diaphragm 2 is formed is bonded to the substrate 101 through the anodic-bonding process. A corrugation 3 and the diaphragm 2 serving as undesired bonding portions when anodic-bonding is performed are formed on the silicon substrate 1 by the micro machining process.

The glass substrate 101 manufacturing process shown in FIGS. 1-4 is described hereinbelow.

In FIG. 1, two holes are precisely machined onto a glass substrate 101 (having a thickness of approximately 400-500 μm). In FIG. 2, the glass substrate 101 is patterned on a top surface which is confronted to the silicon substrate 1 with a mask for forming a recess 103 such that the recess 103 faces the corrugation 3 formed on the substrate 1. This recess 103 prevents the undesired bonding of the corrugation 3 to the glass substrate 101.

Next, in FIG. 3, a metal, for example aluminum, is evaporated on a top surface of the glass substrate 101 to form a metal layer 104. At this time, a bottom surface and inner portions of the holes 102 are evaporated so as to electrically bond the metal layers formed on the top surface and inner portion of the holes to the glass substrate 101 to the glass substrate.

Thereafter, in FIG. 4, a dielectric material 105, for example alumina, is formed or deposited on all surfaces of the metal layer 104 which face the silicon substrate 1.

Thus, when the silicon substrate 1 is bonded to the glass substrate 101 through the anodic-bonding process, the diaphragm 2 and corrugation 3 is not bonded to the glass substrate 101.

As described above, according to the present invention, when the silicon substrate is bonded to the glass substrate through the anodic-bonding process, undesired bonding portions such as the corrugation and diaphragm are not bonded to the glass substrate.

Of course, the concept of the present invention is not limitted by this embodiment. For instance, it is possible to form the dielectric layer on surface of the diaphragm, which is confronted to the glass substrate.

Moreover, according to the present invention, the silicon substrate. contains the corrugation so that the displacement of the diaphragm with respect to the pressure is increased so as to obtain a increased travel distance per unit of applied force.

Claims (5)

What is claimed is:
1. A semiconductor sensor comprising:
a semiconductor substrate including:
a support member having an opening centrally defined therein;
a diaphragm positioned in the opening of the support member;
a flexible supporting means for supporting and coupling the diaphragm with the support member, wherein said flexible supporting means is more flexible than said diaphragm;
a glass substrate having a portion facing said diaphragm and said flexible supporting means and at least one recess defined in said portion in such a manner that said at least one recess faces the entirety of said flexible supporting means, the glass substrate having a through hole and including:
a metal layer deposited on a surface of the glass substrate;
a dielectric layer deposited on the metal layer, the dielectric layer facing the diaphragm, wherein said recess and said dielectric layer prevent said diaphragm and said flexible supporting means from bonding to said glass substrate during an anodic-bonding process.
2. A semiconductor sensor as claimed in claim 1, wherein the flexible supporting means includes a corrugation member.
3. A semiconductor sensor as claimed in claim 1, wherein said recess is annular.
4. A semiconductor sensor as claimed in claim 1, further comprising a plurality of holes formed in the glass substrate, wherein said metal layer is further deposited on inner surfaces of the holes.
5. A semiconductor sensor as claimed in claim 2, wherein said corrugation member is annular.
US08321829 1993-10-26 1994-10-06 Semiconductor sensor manufactured through anodic-bonding process Expired - Fee Related US5528070A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US08141054 US5545594A (en) 1993-10-26 1993-10-26 Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented
US08321829 US5528070A (en) 1993-10-26 1994-10-06 Semiconductor sensor manufactured through anodic-bonding process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08321829 US5528070A (en) 1993-10-26 1994-10-06 Semiconductor sensor manufactured through anodic-bonding process

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US08141054 Division US5545594A (en) 1993-10-26 1993-10-26 Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented

Publications (1)

Publication Number Publication Date
US5528070A true US5528070A (en) 1996-06-18

Family

ID=22493961

Family Applications (2)

Application Number Title Priority Date Filing Date
US08141054 Expired - Fee Related US5545594A (en) 1993-10-26 1993-10-26 Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented
US08321829 Expired - Fee Related US5528070A (en) 1993-10-26 1994-10-06 Semiconductor sensor manufactured through anodic-bonding process

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US08141054 Expired - Fee Related US5545594A (en) 1993-10-26 1993-10-26 Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented

Country Status (2)

Country Link
US (2) US5545594A (en)
JP (1) JPH07221324A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373115B1 (en) * 1998-08-27 2002-04-16 Siemens Aktiengesellschaft Micromechanical structure, sensor and method for manufacturing the same
US6475326B2 (en) 2000-12-13 2002-11-05 Applied Materials, Inc. Anodic bonding of a stack of conductive and glass layers

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2754386B1 (en) * 1996-10-03 1998-10-30 Commissariat Energie Atomique Structure comprising an isolated portion in a solid substrate and method of making such a structure
US6160936A (en) * 1997-01-19 2000-12-12 Samsung Electronics Co., Ltd. Apparatus and method for combining optical waveguide and optical fiber
US6232150B1 (en) 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
US6901807B1 (en) * 2003-12-30 2005-06-07 Honeywell International Inc. Positive and negative pressure sensor
US6886410B1 (en) * 2003-12-30 2005-05-03 Honeywell International Inc. Modified dual diaphragm pressure sensor
US7345867B2 (en) * 2005-11-18 2008-03-18 Alps Electric Co., Ltd Capacitive pressure sensor and method of manufacturing the same
US8464589B2 (en) * 2010-10-14 2013-06-18 Solid State System Co., Ltd. Micro-electromechanical systems (MEMS) structure

Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800413A (en) * 1969-10-27 1974-04-02 Rosemount Inc Differential pressure transducer
US3983022A (en) * 1970-12-31 1976-09-28 International Business Machines Corporation Process for planarizing a surface
US4168517A (en) * 1977-11-10 1979-09-18 Lee Shih Y Capacitive pressure transducer
US4196632A (en) * 1978-08-14 1980-04-08 The Boeing Company Dual capacitance type bonded pressure transducer
US4301492A (en) * 1980-01-28 1981-11-17 Paquin Maurice J Pressure-sensing transducer
US4425799A (en) * 1982-06-03 1984-01-17 Kavlico Corporation Liquid capacitance pressure transducer technique
US4458537A (en) * 1981-05-11 1984-07-10 Combustion Engineering, Inc. High accuracy differential pressure capacitive transducer
US4467394A (en) * 1983-08-29 1984-08-21 United Technologies Corporation Three plate silicon-glass-silicon capacitive pressure transducer
US4606228A (en) * 1985-01-07 1986-08-19 General Signal Corporation Diaphragm for transducer measuring low pressure differentials
US4609966A (en) * 1984-10-11 1986-09-02 Vaisala Oy Absolute pressure transducer
US4612812A (en) * 1985-08-15 1986-09-23 Rosemount Inc. Stress reducing stop for unstretched pressure sensing diaphragm
US4754365A (en) * 1987-06-15 1988-06-28 Fischer & Porter Company Differential pressure transducer
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
US4790192A (en) * 1987-09-24 1988-12-13 Rosemount Inc. Silicon side by side coplanar pressure sensors
US4829826A (en) * 1987-05-07 1989-05-16 Fischer & Porter Company Differential-pressure transducer
US4872945A (en) * 1986-06-25 1989-10-10 Motorola Inc. Post seal etching of transducer diaphragm
US4905575A (en) * 1988-10-20 1990-03-06 Rosemount Inc. Solid state differential pressure sensor with overpressure stop and free edge construction
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US5056369A (en) * 1989-04-14 1991-10-15 Fuji Electric Co., Ltd. Capacitive differential pressure detector
US5114664A (en) * 1991-05-06 1992-05-19 General Electric Company Method for in situ evaluation of capacitive type pressure transducers in a nuclear power plant
US5161532A (en) * 1990-04-19 1992-11-10 Teknekron Sensor Development Corporation Integral interstitial fluid sensor
US5169599A (en) * 1990-08-30 1992-12-08 Teknekron Sensor Development Corporation Method and apparatus for optically detecting presence of immunological components
US5177579A (en) * 1989-04-07 1993-01-05 Ic Sensors, Inc. Semiconductor transducer or actuator utilizing corrugated supports
US5178015A (en) * 1991-07-22 1993-01-12 Monolithic Sensors Inc. Silicon-on-silicon differential input sensors
US5209118A (en) * 1989-04-07 1993-05-11 Ic Sensors Semiconductor transducer or actuator utilizing corrugated supports
US5211058A (en) * 1990-10-05 1993-05-18 Yamatake-Honeywell Co., Ltd. Capacitive pressure sensor and method of manufacturing the same
US5216273A (en) * 1990-11-10 1993-06-01 Robert Bosch Gmbh Microvalve of multilayer silicon construction
US5264075A (en) * 1992-11-06 1993-11-23 Ford Motor Company Fabrication methods for silicon/glass capacitive absolute pressure sensors
US5277068A (en) * 1990-10-05 1994-01-11 Yamatake-Honeywell Co., Ltd. Capacitive pressure sensor and method of manufacturing the same
US5320705A (en) * 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
US5323656A (en) * 1992-05-12 1994-06-28 The Foxboro Company Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same

Patent Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800413A (en) * 1969-10-27 1974-04-02 Rosemount Inc Differential pressure transducer
US3983022A (en) * 1970-12-31 1976-09-28 International Business Machines Corporation Process for planarizing a surface
US4168517A (en) * 1977-11-10 1979-09-18 Lee Shih Y Capacitive pressure transducer
US4196632A (en) * 1978-08-14 1980-04-08 The Boeing Company Dual capacitance type bonded pressure transducer
US4301492A (en) * 1980-01-28 1981-11-17 Paquin Maurice J Pressure-sensing transducer
US4458537A (en) * 1981-05-11 1984-07-10 Combustion Engineering, Inc. High accuracy differential pressure capacitive transducer
US4425799A (en) * 1982-06-03 1984-01-17 Kavlico Corporation Liquid capacitance pressure transducer technique
US4467394A (en) * 1983-08-29 1984-08-21 United Technologies Corporation Three plate silicon-glass-silicon capacitive pressure transducer
US4609966A (en) * 1984-10-11 1986-09-02 Vaisala Oy Absolute pressure transducer
US4606228A (en) * 1985-01-07 1986-08-19 General Signal Corporation Diaphragm for transducer measuring low pressure differentials
US4612812A (en) * 1985-08-15 1986-09-23 Rosemount Inc. Stress reducing stop for unstretched pressure sensing diaphragm
US4872945A (en) * 1986-06-25 1989-10-10 Motorola Inc. Post seal etching of transducer diaphragm
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
US4829826A (en) * 1987-05-07 1989-05-16 Fischer & Porter Company Differential-pressure transducer
US4754365A (en) * 1987-06-15 1988-06-28 Fischer & Porter Company Differential pressure transducer
US4790192A (en) * 1987-09-24 1988-12-13 Rosemount Inc. Silicon side by side coplanar pressure sensors
US5320705A (en) * 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
US4905575A (en) * 1988-10-20 1990-03-06 Rosemount Inc. Solid state differential pressure sensor with overpressure stop and free edge construction
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US5209118A (en) * 1989-04-07 1993-05-11 Ic Sensors Semiconductor transducer or actuator utilizing corrugated supports
US5177579A (en) * 1989-04-07 1993-01-05 Ic Sensors, Inc. Semiconductor transducer or actuator utilizing corrugated supports
US5056369A (en) * 1989-04-14 1991-10-15 Fuji Electric Co., Ltd. Capacitive differential pressure detector
US5161532A (en) * 1990-04-19 1992-11-10 Teknekron Sensor Development Corporation Integral interstitial fluid sensor
US5169599A (en) * 1990-08-30 1992-12-08 Teknekron Sensor Development Corporation Method and apparatus for optically detecting presence of immunological components
US5211058A (en) * 1990-10-05 1993-05-18 Yamatake-Honeywell Co., Ltd. Capacitive pressure sensor and method of manufacturing the same
US5277068A (en) * 1990-10-05 1994-01-11 Yamatake-Honeywell Co., Ltd. Capacitive pressure sensor and method of manufacturing the same
US5216273A (en) * 1990-11-10 1993-06-01 Robert Bosch Gmbh Microvalve of multilayer silicon construction
US5114664A (en) * 1991-05-06 1992-05-19 General Electric Company Method for in situ evaluation of capacitive type pressure transducers in a nuclear power plant
US5178015A (en) * 1991-07-22 1993-01-12 Monolithic Sensors Inc. Silicon-on-silicon differential input sensors
US5323656A (en) * 1992-05-12 1994-06-28 The Foxboro Company Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
US5264075A (en) * 1992-11-06 1993-11-23 Ford Motor Company Fabrication methods for silicon/glass capacitive absolute pressure sensors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373115B1 (en) * 1998-08-27 2002-04-16 Siemens Aktiengesellschaft Micromechanical structure, sensor and method for manufacturing the same
US6475326B2 (en) 2000-12-13 2002-11-05 Applied Materials, Inc. Anodic bonding of a stack of conductive and glass layers
US20030037871A1 (en) * 2000-12-13 2003-02-27 Gross Harald S. Anodically bonded device structure
US6972154B2 (en) 2000-12-13 2005-12-06 Applied Materials, Inc. Anodically bonded device structure

Also Published As

Publication number Publication date Type
US5545594A (en) 1996-08-13 grant
JPH07221324A (en) 1995-08-18 application

Similar Documents

Publication Publication Date Title
US6171881B1 (en) Acceleration sensor and process for the production thereof
US5596243A (en) Crystal oscillator
US6210514B1 (en) Thin film structure machining and attachment
US5369544A (en) Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
US5277068A (en) Capacitive pressure sensor and method of manufacturing the same
US4386453A (en) Method for manufacturing variable capacitance pressure transducers
US20010055836A1 (en) Semiconductor dynamic sensor and method of manufacturing the same
US6060336A (en) Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
US4617606A (en) Capacitive pressure transducer
US5515732A (en) Capacitive pressure sensor and reference with stress isolating pedestal
US5629538A (en) Semiconductor sensor having a protective layer
US6035714A (en) Microelectromechanical capacitive accelerometer and method of making same
US6391673B1 (en) Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level
US5479827A (en) Capacitive pressure sensor isolating electrodes from external environment
US6759309B2 (en) Micromachined structures including glass vias with internal conductive layers anodically bonded to silicon-containing substrates
US6255741B1 (en) Semiconductor device with a protective sheet to affix a semiconductor chip
US5447076A (en) Capacitive force sensor
US4812199A (en) Rectilinearly deflectable element fabricated from a single wafer
US4531267A (en) Method for forming a pressure sensor
US6392158B1 (en) Structure equipped with electric contacts formed through said structure substrate and method for obtaining said structure
US20020059722A1 (en) Method of mounting a semiconductor device to a substrate and a mounted structure
US5317922A (en) Capacitance transducer article and method of fabrication
US20060241354A1 (en) Electromagnetically coupled hermetic chamber
US5614742A (en) Micromechanical accelerometer with plate-like semiconductor wafers
US4467394A (en) Three plate silicon-glass-silicon capacitive pressure transducer

Legal Events

Date Code Title Description
FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
FP Expired due to failure to pay maintenance fee

Effective date: 20080618