US5437734A - Solar cell - Google Patents

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Publication number
US5437734A
US5437734A US08/193,467 US19346794A US5437734A US 5437734 A US5437734 A US 5437734A US 19346794 A US19346794 A US 19346794A US 5437734 A US5437734 A US 5437734A
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United States
Prior art keywords
semiconductor layer
layer
semiconductor
solar cell
layers
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Expired - Lifetime
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US08/193,467
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English (en)
Inventor
Takeshi Matsushita
Dharam P. Gosain
Jonathan Westwater
Setsuo Usui
Kunio Hane
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Sony Corp
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Sony Corp
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Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HANE, KUNIO, GOSAIN, DHARAM P., USUI, SETSUO, WESTWATER, JONATHAN, MATSUSHITA, TAKESHI
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the first aspect of the present invention resides in a solar cell which comprises
  • the second, upper solar cell unit comprises
  • FIG. 1 is a schematic partial sectional view showing the basic structure of a solar cell according to the present invention.
  • FIG. 2 is a schematic partial sectional view showing the specific structure of a solar cell according to the first embodiment of the present invention.
  • FIGS. 3(a) and 3(b) are schematic partial sectional views showing the basic and specific structures of the solar cell according to the second embodiment of the present invention.
  • the solar cell according to the present invention has a basic structure as shown in FIG. 1. It is composed basically of a first semiconductor layer (1) of first conductivity type, a second semiconductor layer (2) of second conductivity type, and a third semiconductor layer (3).
  • the third semiconductor layer (3) is formed between the first semiconductor layer (1) and the second semiconductor layer (2), and it has a band gap narrower than that of the first and second semiconductor layers.
  • the third semiconductor layer (3) has a pn junction (4).
  • the solar cell of the present invention further has a first buffer layer (5) and a second buffer layer (6).
  • the consequence is an overall improvement in conversion efficiency of the solar cell.
  • composition of the first (or second) buffer layer changes stepwise or continuously across the thickness from the interface with the first (or second) semiconductor layer toward the interface with the third semiconductor layer.
  • the presence of such buffer layers minimizes the chance that the recombination of minority carriers takes place at the heterojunction interface.
  • the first and second semiconductor layers (1 and 2) are made of silicon having a band gap of 1.1 eV.
  • the third semiconductor layer (3) is made of germanium having a band gap of 0.66 eV.
  • the practical thickness should be greater than ten times that so as to reduce the lattice mismatch as much as possible. If the third semiconductor layer (3) is made of Si 0 .5,Ge 0 .5, for example, it would be possible to make the first and second buffer layers (5 and 6) thinner.
  • the first buffer layer (15) is coated by epitaxial growth with the third semiconductor layer (13A) of P-doped Ge (which is 0.5 ⁇ m thick) and then with the third semiconductor layer (13B) of B-doped Ge (which is 0.5 ⁇ m thick).
  • the third semiconductor layer (13) is formed, which is composed of the P-doped n-type layer (13A) and the B-doped p-type layer (13B), with the pn-junction (14) therebetween.
  • the third semiconductor layer (13) is coated by epitaxial growth with the second buffer layer (16) of B-doped Si x Ge 1-x (which is about 0.1-1.0 ⁇ m thick).
  • the second buffer layer (16) is formed such that the value of X therein increases stepwise or continuously across the thickness over the range from 0 to 1.
  • the substrate (17) and the insulation layer (18) are partly removed by selective etching so that a part of the first semiconductor layer (11) is exposed.
  • the first electrode (19A) is formed on the exposed part.
  • the total thickness from the first semiconductor layer (11) to the second semiconductor layer (12) is about 1.6-3.4 ⁇ m.
  • the substrate (17) is made from single crystal silicon or polycrystalline silicon (produced by casting, electromagnetic casting, or ribbon casting), it is possible to use it as the first semiconductor layer.
  • the insulation layer (18) may be omitted and the first buffer layer (15) may be formed by epitaxial growth directly on the substrate (17).
  • the solar cell is composed of a first semiconductor layer (21), a second semiconductor layer (23), and a buffer layer (25).
  • the first semiconductor layer (21) is composed of a first semiconductor region (21A) of the first conductivity type, which has a first electrode (29A), and a second semiconductor layer (21B) of the second conductivity type (opposite to the first conductivity type), which has a second electrode (29B).
  • the second semiconductor layer (23) is under the first semiconductor layer (21), and the former has a narrower band gap than the latter.
  • the buffer layer (25) is between the first and second semiconductor layers (21 and 23), so that it relieves their lattice mismatch.
  • the solar cell in this example is basically the same in structure as that in Example 1. It may he regarded as being composed of the first electrode (29A), the first semiconductor region (21A), the buffer layer (25), the second semiconductor layer (23), the buffer layer (25), the second semiconductor region (21B), and the second electrode (29B), which are arranged sequentially.
  • the solar cell in this example is constructed as schematically shown in section in FIG. 3(B). It is composed of a substrate (27), an insulation layer (28), a third semiconductor layer (22) of polycrystalline Si having a first conductivity type (e.g., n-type), a second buffer layer (26) of i-Si 1-x Ge x , a second semiconductor layer (23) of i-Ge, a first buffer layer (25) of i-Si x Ge 1-x , and a first semiconductor layer (21) of Si, which are arranged sequentially one on top of the other.
  • the first and second buffer layers (25 and 26) are formed such that the value of X changes stepwise or continuously over the range from 0 to 1.
  • the first semiconductor layer (21) is composed of the first semiconductor region (21A) of first conductivity type (e.g., n + ) and the second semiconductor region (21B) of second conductivity type (e.g., p + ) which is opposite to the first conductivity type.
  • the first and second semiconductor regions (21A and 21B) are provided with the first and second electrodes (29A and 29B), respectively.
  • the first and second semiconductor regions (21A and 21B) may or may not be adjacent to each other.
  • the first semiconductor layer (21) is covered with an antireflection film (30).
  • the first buffer layer (25) is formed to relieve the lattice mismatch between the first and second semiconductor layers (21 and 23). It also reduces the chance that recombination of minority carriers takes place at the heterojunction interface between the first and second semiconductor layers (21 and 23).
  • the second buffer layer (26) be formed to relieve the lattice mismatch between the second and third semiconductor layers (23 and 22) and to prevent defects from occurring in the second semiconductor layer (23). It is also desirable that the third semiconductor layer (22) be formed between the second buffer layer (26) and the insulation layer (28) so as to prevent the recombination of minority carriers at their interface.
  • the second buffer layer (26) is coated by epitaxial growth with the second semiconductor layer (23) of undoped Ge, which is 1 ⁇ m thick.
  • the second semiconductor layer (23) is coated by epitaxial growth with the first buffer layer (25) of undoped Si x Ge 1-x , which is about 0.1-1.0 ⁇ m thick.
  • the first buffer layer (25) is formed such that the value of X increases stepwise or continuously across the thickness over the range from 0 to 1.
  • the first buffer layer (25) is coated by epitaxial growth with the first semiconductor layer (21) of Si, which is about 0.2 ⁇ m thick.
  • the first semiconductor layer (21) is doped with phosphorus and boron to form the first and second semiconductor regions (21A and 21B), respectively.
  • This example illustrates a third embodiment of a solar cell of the present invention.
  • the solar cell is of tandem type composed of two units, the first being the same one as in Example 1 and the second having a pn structure of single crystal silicon or polycrystalline silicon.
  • the first unit is produced in the same manner as in Example 1, and the second unit is formed on the second semiconductor layer of the first unit by the conventional procedure employed to form a pn structure.
  • the first conductivity type may be changed to p-type (or p + -type) and the second conductivity type may be changed to n-type (or n + -type).
  • the second semiconductor layer (23) may be of the second conductivity type, if necessary.

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  • Photovoltaic Devices (AREA)
US08/193,467 1993-02-08 1994-02-08 Solar cell Expired - Lifetime US5437734A (en)

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Application Number Priority Date Filing Date Title
JP5-041764 1993-02-08
JP4176493 1993-02-08

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KR (1) KR100280838B1 (enrdf_load_stackoverflow)
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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926739A1 (en) * 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
US6057506A (en) * 1998-03-23 2000-05-02 The United States Of America As Represented By The United States Department Of Energy Variable current-voltage TPV device for use in a thermophotovoltaic energy conversion system
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
US6559467B2 (en) * 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US20030092226A1 (en) * 2001-11-13 2003-05-15 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the same
US6743974B2 (en) * 2001-05-08 2004-06-01 Massachusetts Institute Of Technology Silicon solar cell with germanium backside solar cell
US20050081910A1 (en) * 2003-08-22 2005-04-21 Danielson David T. High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers
US20050183766A1 (en) * 2004-02-25 2005-08-25 Kazuo Nakajima Multi-element polycrystal for solar cells and method of manufacturing the same
US20090215218A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Method for making solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US20090211623A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US20100037944A1 (en) * 2008-08-14 2010-02-18 Sater Bernard L Photovoltaic cell with buffer zone
US20100037943A1 (en) * 2008-08-14 2010-02-18 Sater Bernard L Vertical multijunction cell with textured surface
US20100037937A1 (en) * 2008-08-15 2010-02-18 Sater Bernard L Photovoltaic cell with patterned contacts
US20100051472A1 (en) * 2008-08-28 2010-03-04 Sater Bernard L Electrolysis via vertical multi-junction photovoltaic cell
US20100267223A1 (en) * 2009-04-16 2010-10-21 Atomic Energy Council-Institute Of Nuclear Energy Research Method of Fabricating Thin Film Interface for Internal Light Reflection and Impurities Isolation
CN101882645A (zh) * 2009-05-08 2010-11-10 安科太阳能公司 具有iv/iii-v族混合合金的反向多结太阳能电池
CN101689572B (zh) * 2007-06-21 2012-08-29 周星工程股份有限公司 太阳能电池及其制造方法与制造装置
US9530921B2 (en) * 2014-10-02 2016-12-27 International Business Machines Corporation Multi-junction solar cell

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101324292B1 (ko) * 2007-05-29 2013-11-01 주성엔지니어링(주) 고효율 태양전지와 그 제조방법 및 이를 위한 태양전지제조장치
KR100999810B1 (ko) 2009-03-31 2010-12-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Citations (2)

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US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559467B2 (en) * 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6287903B1 (en) 1997-12-24 2001-09-11 Texas Instruments Incorporated Structure and method for a large-permittivity dielectric using a germanium layer
US6486520B2 (en) 1997-12-24 2002-11-26 Texas Instruments Incorporated Structure and method for a large-permittivity gate using a germanium layer
EP0926739A1 (en) * 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6180432B1 (en) 1998-03-03 2001-01-30 Interface Studies, Inc. Fabrication of single absorber layer radiated energy conversion device
US6057506A (en) * 1998-03-23 2000-05-02 The United States Of America As Represented By The United States Department Of Energy Variable current-voltage TPV device for use in a thermophotovoltaic energy conversion system
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
US6384313B2 (en) 1998-05-15 2002-05-07 Canon Kabushiki Kaisha Solar cell module and method of producing the same
US6743974B2 (en) * 2001-05-08 2004-06-01 Massachusetts Institute Of Technology Silicon solar cell with germanium backside solar cell
US7368797B2 (en) 2001-11-13 2008-05-06 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the same
US6927417B2 (en) 2001-11-13 2005-08-09 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the same
US20050205960A1 (en) * 2001-11-13 2005-09-22 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the
US20030092226A1 (en) * 2001-11-13 2003-05-15 Toyota Jidosha Kabushiki Kaisha Photoelectric conversion element and method of manufacturing the same
US20050081910A1 (en) * 2003-08-22 2005-04-21 Danielson David T. High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers
US20050183766A1 (en) * 2004-02-25 2005-08-25 Kazuo Nakajima Multi-element polycrystal for solar cells and method of manufacturing the same
US7279632B2 (en) 2004-02-25 2007-10-09 President Of Tohoku University Multi-element polycrystal for solar cells and method of manufacturing the same
CN101689572B (zh) * 2007-06-21 2012-08-29 周星工程股份有限公司 太阳能电池及其制造方法与制造装置
US20090215218A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Method for making solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US8945976B2 (en) 2008-02-25 2015-02-03 Suniva, Inc. Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
US20090211623A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US8076175B2 (en) 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US20100037944A1 (en) * 2008-08-14 2010-02-18 Sater Bernard L Photovoltaic cell with buffer zone
US20100037943A1 (en) * 2008-08-14 2010-02-18 Sater Bernard L Vertical multijunction cell with textured surface
US8106293B2 (en) 2008-08-14 2012-01-31 Mh Solar Co., Ltd. Photovoltaic cell with buffer zone
US20100037937A1 (en) * 2008-08-15 2010-02-18 Sater Bernard L Photovoltaic cell with patterned contacts
US8293079B2 (en) 2008-08-28 2012-10-23 Mh Solar Co., Ltd. Electrolysis via vertical multi-junction photovoltaic cell
US20100051472A1 (en) * 2008-08-28 2010-03-04 Sater Bernard L Electrolysis via vertical multi-junction photovoltaic cell
US8273650B2 (en) * 2009-04-16 2012-09-25 Atomic Energy Council—Institute of Nuclear Energy Research Method of fabricating thin film interface for internal light reflection and impurities isolation
US20100267223A1 (en) * 2009-04-16 2010-10-21 Atomic Energy Council-Institute Of Nuclear Energy Research Method of Fabricating Thin Film Interface for Internal Light Reflection and Impurities Isolation
CN101882645A (zh) * 2009-05-08 2010-11-10 安科太阳能公司 具有iv/iii-v族混合合金的反向多结太阳能电池
CN101882645B (zh) * 2009-05-08 2014-11-05 安科太阳能公司 具有iv族合金的反向多结太阳能电池
US9530921B2 (en) * 2014-10-02 2016-12-27 International Business Machines Corporation Multi-junction solar cell
US10312400B2 (en) 2014-10-02 2019-06-04 International Business Machines Corporation Multi-junction solar cell
US10580926B2 (en) 2014-10-02 2020-03-03 International Business Machines Corporation Multi-junction solar cell

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KR100280838B1 (ko) 2001-02-01
TW240341B (enrdf_load_stackoverflow) 1995-02-11
KR940020465A (ko) 1994-09-16

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