New! View global litigation for patent families

US3694972A - Method and apparatus for subdividing a crystal wafer - Google Patents

Method and apparatus for subdividing a crystal wafer Download PDF

Info

Publication number
US3694972A
US3694972A US5018170A US3694972A US 3694972 A US3694972 A US 3694972A US 5018170 A US5018170 A US 5018170A US 3694972 A US3694972 A US 3694972A
Authority
US
Grant status
Grant
Patent type
Prior art keywords
wafer
griddle
crystal
slits
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
Inventor
Reimer Emeis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
REIMER EMEIS
Original Assignee
REIMER EMEIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24CABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C3/00Abrasive blasting machines or devices; Plants
    • B24C3/32Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
    • B24C3/322Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Abstract

A body, such as a crystalline semiconductor body for the production of diodes, transistors, thyristors or other electronic components, is severed from a crystal wafer by placing the wafer face-to-face onto the surface of a griddle which has a slit along each cutting line. A sandblast is directed from a jet nozzle upon the top face of the wafer above the slit, and relative movement is imparted between griddle and jet nozzle in a direction lengthwise of the slit, simultaneously exhausting the sand out of the slit. In this manner, the crystal body is separated from the rest of the wafer along the slit. Preferably, the device for performing the method is provided with a griddle whose top surface has a group of parallel slits extending crosswise to another group of parallel slits, a comb structure, also with intersecting slits, being mounted above the griddle surface proper. Such apparatus is capable of simultaneously severing a multiplicity of individual bodies from a crystal wafer.

Description

United States Patent on 3,694,972

Emeis 51 Oct. 3, 1972 1541 mmron AND APPARATUS son SUBDIVIDING A CRYSTAL WAFER [7 21 Inventor: Reimer Emeis, Feuersteinstr. 12,

8553 Ebermannstadt, Germany [22] Filed: June 26, 1970 211 Appl. No.: 50,181

[52] US. Cl ..Sl/3l9, 51/8 [51] Int. Cl. ..B24b l/00, B24c 1/00 [58] Field of Search ..51/3l9, 320, 8

[56] References Cited UNITED STATES PATENTS 587,892 8/1897 Walter ..5l/8 X 1,664,159 3/1928 Chase ..5l/8 3,187,412 6/1965 Tiemann ..5l/319 X 3,205,104 9/1965 Sibley ..51/319 X 3,262,234 7/1966 Roach ..5l/320 3,453,781 7/1969 Greenman ..51/3l9 X 3,516,204 6/1970 Kulischenko ..5 1/8 FORElGN PATENTS OR APPLICATIONS 794,528 5/1958 Great Britain ..51/8

Primary Examiner-James L. Jones, Jr. Attorney-Curt M. Avery, Arthur E. Wilfond, Herbert L. Lerner and Daniel J. Tick ABSTRACT A body, such as a crystalline semiconductor body for the production of diodes, transistors, thyristors or other electronic components, is severed from a crystal wafer by placing the wafer face-to-face onto the surface of a griddle which has a slit along each cutting line. A sandblast is directed from a jet nozzle upon the top face of the wafer above the slit, and relative movement is imparted between griddle and jet nozzle in a direction lengthwise of the slit, simultaneously exhausting the sand out of the slit. In this manner, the crystal body is separated from the rest of the wafer along the slit. Preferably, the device for performing the method is provided with a griddle whose top surface has a group of parallel slits extending crosswise to another group of parallel slits, a comb structure, also with intersecting slits, being mounted above the griddle surface proper. Such apparatus is capable of simultaneously severing a multiplicity of individual bodies from a crystal wafer.

2 Claim, 6 Drawing Figures METHOD AND APPARATUS FOR SUBDIVIDING A CRYSTAL WAFER My invention relates to a method of severing crystalline bodies from a crystal slice or wafer.

In electrical appliances for industrial, kitchen and other purposes, it has become increasingly desirable to employ semiconductor circuit components whose power demand is relatively low and whose external dimensions, therefore, may be relatively small.

The use of such small-area semiconductor components in electrical appliances on the one hand, and the large number of these components required for such uses, are predicated upon the availability of particularly economical mass production methods. These must be of such character, however, as to avoid appreciable deleterious effect upon the properties, particularly the electrical qualities, of the semiconductor components produced. The electrical properties of a semiconductor component are particularly liable to be impaired when the crystalline body of this component is cut from a large-area crystalline slice or wafer that incorporates a sequence of parallel zones having alternate different types of conductivity parallel to the wafer main faces. When severing the semiconductor components by sawing or breaking, the separating edge and surface portion of the resulting bodies is subjected to deeply penetrating damage and destruction of the crystalline lattice structure which may virtually form short-circuits across the p-n junctions where these emerge at the surface so that the junctions no longer possess a sufficient if any blocking ability. Although the damaged crystal layers at the surface of the severed semiconductor components can be eliminated by etching, this method requires the use of acidic etchants, for example a mixture of hydrofluoric acid and nitric acid, as well as long periods of etching time so that any contact electrodes of metal on the semiconductor component are attacked by the etchant.

It is an object of my invention to devise a different method which, on the one hand, secures an improved economy of manufacture and, on the other hand, avoids or minimizes the occurrence of crystalline damage at the severing edges that require subsequent treatment by acidic etchant.

To this end, and in accordance with a feature of my invention, l sever a crystal body from a crystal slice or wafer by placing the wafer face-to-face onto a surface area of a griddle which is slitted in that area. I further direct from a nozzle a jet of sandblast upon the other face of the wafer above each slit and impart a relative motion between the griddle and the jet in a direction lengthwise of the slit. Simultaneously, I exhaust the sand out of the slit. As a result, the crystal body is severed from the wafer along the slit.

With such a method, the damages to the crystal lattice structure at the cutting edge of the bodies separated from the crystal wafer are extremely slight and can be removed within a minimum of time with the aid of alkaline etchants which do not attack any metal electrodes attached to the crystal bodies. Consequently, the blocking ability of any p-n junctions that may emerge at the severing faces remains fully effective or does not exhibit appreciable deterioration. Furthermore, cuts of a sharp contour are produced in the crystal wafers, and the edges of the separated bodies are free of broken-away localities.

According to further features of my invention, I perform the above-described method with the aid of a device which has a griddle whose supporting surface for the crystalline wafer is provided with crosswise arrays of parallel slits, the device further comprising a group of metal combs which form a crosswise design matching that of the slitted griddle and which are stationarily fixed in a frame.

According to another feature of the invention, a griddle arrangement particularly simple to manufacture is made of a metal block which has crosswise parallel incisions at the supporting surface for the crystalline wafer and whose bottom is traversed by exhaust bores communicating with the incisions.

The above-mentioned and further objects, advantages and features of my invention will be apparent from the following description of embodiments of processing equipment according to the invention illustrated by way of example on the accompanying drawings in which:

FIG. 1 is a lateral view of apparatus for severing crystal bodies from a crystal wafer.

FIG. 2 is a perspective view of the griddle structure in apparatus according to FIG. 1.

FIG. 3 shows on a larger scale a portion of the wafersupporting griddle surface corresponding to FIG. 2.

FIG. 4 is a vertical section through FIG. 3, the lefthand portion of FIG. 4 being sectioned along the line A-B, and the right-hand portion of FIG. 4 being sectioned along the line B-C of FIG. 2.

FIG. 5 is a schematic and perspective view of another embodiment of a griddle applicable in apparatus otherwise corresponding to FIG. 1.

FIG. 6 is a lateral view, partly in section, of a device according to FIG. 5, the section being taken along the line DD of FIG. 5.

The apparatus according to FIG. 1 comprises a support 2 with an opening 3 to which a downwardly extending exhaust pipe 4 is connected by means of a duct flange. Mounted on the support 2 above the exhaust opening 3 is a griddle 5. The griddle is fastened on the support 2 by two angle pieces 7 located opposite each other and entering into recesses 6 at correspondingly opposite lateral faces of the griddle 5. The angle pieces 7 are secured to the support 2 by mounting screws such as those visible in FIG. 2. The recesses 6 permit an adjustable fastening of the griddle 5 to the support 2.

The supporting surface 8 on top of the griddle 5 is preferably lapped to planar shape. Four crystal slices or wafers 9 which, for simplicity, are shown only by dotand-dash lines, are placed face-to-face on top of the griddle. The wafers 9 are preferably cemented by cellulose varnish to the supporting surface 8 which is only slightly roughened by the lapping treatment. The crystal wafers 9, for example, may consist of silicon and may have metal coatings on their main faces so as to contain a sequence of zones having alternately different conductivity types and extending parallel to the main faces. It is the purpose of the apparatus shown in FIG. 1 to separate the silicon wafers 9 into a multiplicity of small silicon components for electronic semiconductor purposes.

Mounted above the support 2 is a sandblasting device 10 with a jet nozzle 11 directed vertically toward the supporting surface 8 of the griddle 5. Preferably the nozzle 11 has a slot-shaped orifice. The

sandblasting device is adjustably mounted on a horizontal holder rod 12 and is connected at the top with a sandblast supply hose 14. The rod 12 is adjustably mounted on a holder structure 13 which can be displaced in the direction of the arrow 18 within the plane of illustration, and which can also be displaced in a direction perpendicular to the plane of illustration, each time in parallel relation to the supporting surface 8 of the griddle 5. As is shown in FIGS. 2 and 3, the griddle comprises a frame structure 5a in which a packet of identical metal combs are firmly clamped. The tips of the teeth on these metal combs 15, in totality, constitute the above-mentioned supporting surface 8 of the griddle for accommodating the crystal wafers 9.

The support 2 is rotatable in a plane parallel to the supporting surface 8. The support 2 has a lug projecting from the periphery. The angular movement of the lug is limited by two fixed stops 18 so that the support 2 can be turned a maximum angular amount of 90.

As will be seen from the section A-B in FIG. 4, a strip-shaped spacer 16 is arranged on both sides of the griddle 5. Each spacer is located between two combs IS. The spacer strips thus provide for slits 21 which are parallel to the combs and interrupt the supporting surface 8. The section B-C shown in FIG. 4 indicates that the interspaces between the individual teeth of the combs I5 form further slits 24 perpendicular to the combs 15.

After the crystal wafers 9 are cemented to the supporting surface 8 of the griddle 5, the sandblasting device is so set that the orifice of the blast nozzle 11 is located above one of the slits 21. When the holder 13 is shifted in the direction of the arrow 18 along the slit 21, starting from the frame 5a of the griddle 5 and moving at uniform speed, the sandblast cuts through two wafers 9 located above the slit 21. The sand of the blast is exhausted from beneath the griddle 5 through the slit 2] and the exhaust duct 4. This prevents the sand from backing up and collecting in the slit.

After thus producing the severing cut above the slit 2 I, the holder 13 is shifted perpendicularly to the plane of illustration (FIG. 1), Le. in the direction of the arrow 25 in FIG. 2, so that the orifice of the jet nozzle 11 is located above slit 21. Now the cutting operation is repeated, again starting from the frame 5a of the griddle 5 by shifting the holder 13 together with the sandblasting device in the direction of the arrow 18 along the other slit 2! at uniform speed. This produces another severing cut through two crystal wafers 9.

After the cuts are completed along all of the parallel slits 21, the support 2 is turned 90. Thereafter, the crystal wafers 9 are cut in the same manner as described above, but now along the slits 24 perpendicular to the slits 21. Subsequently, the small silicon bodies cut from the wafers 9 are removed from the griddle 8, for example, with the aid of acetone.

A cutting rate of 3 to 5 cm per minute has been found well suitable for severing crystal wafers 9 or 0.3 mm thick silicon having a nickel layer of 3 to 5 micron thickness on each of the two main faces. The width of the severing cut is preferably 0.2 mm. This cutting width is obtained with a jet nozzle 11 whose slotted orifice has a width of about 0. l5 mm. The width of the slits 21 and 24 in the griddle is preferably twice to three times the width of the slit-shaped nozzle orifice. The sand employed preferably has a grain size of IO to 30 microns, preferably about 20 microns.

After severing the crystal bodies from the silicon wafers 9, the small silicon bodies already provided with area electrodes, are etched for l to 2 minutes in an aqueous solution of KOH or NaOH The crystal damages caused by the sandblasting at the surface of these silicon bodies are so slight that all of the damaged lattice structure is removed by this treatment, and the full blocking ability of the p-n junctions emerging at the cutting faces is preserved without damage to the metal electrodes.

The sandblasting device 10 may also be provided with several jet nozzles 11' located beside one another, as shown in FIG. 6, so that simultaneously several parallel cuts can be passed through the crystal wafers 9.

The further embodiment of the griddle shown in FIG. 5 and applicable in apparatus otherwise corresponding to FIG. 1, comprises essentially a prismatic block 31 which is provided at the supporting surface for the semiconductor wafers 9 with a number of crosswise and parallel incisions 32 and 33. The other components of the griddle device according to FIG. 5 are denoted by the same reference numerals as those used in FIGS. 1 and 2 for corresponding items respectively.

As will be seen from the cross section illustrated in FIG. 6, the crosswise parallel incisions 32 and 33 extend downward to approximately one-half the height of the metal block 31. The bottom portion of the block 31 is provided with suction bores 34 which preferably are arranged precisely beneath the intersection points of the crosswise parallel incisions 32, 33.

The griddle according to FIGS. 5 and 6 can be fastened, in the same manner as the griddle 5 of F IG. 2, above the suction opening 3 on the support 2.

To those skilled in the art it will be obvious upon a study of this disclosure that my invention permits of various modifications and hence may be given embodiments other than particularly illustrated and described herein, without departing from the essential features of my invention and within the scope of the claims annexed hereto.

lclaim:

l. The method of subdividing a thin semiconductive crystal wafer into individual semiconductor members by forming cuts in the wafer perpendicularly to the faces thereof which comprises cementing a face of the wafer onto a planar support formed with an array of slits extending in direction in which the cuts are to be formed in the wafer, disposing a sandblast nozzle having an elongated outlet opening, that is narrower than the width of the slits formed in the support directly above the opposite face of the wafer and in alignment with one of the slits, blasting a jet of sand having a grain size of substantially ID to 30 p. from the nozzle onto the opposite face of the wafer along the respective slit, and then passing the nozzle along the respective slit and parallel to the faces of the wafer so as to form a severing cut in the wafer, and simultaneously removing sand by suction from the respective slit wherein sand from the nozzle has accumulated.

2. The method of claim 1 wherein the slits are arranged in parallel criss-cross relationship, and which comprises disposing a plurality of the sandblast nozzles in alignment with a corresponding plurality of the slits, blasting a corresponding plurality of jets of the sand from the nozzles onto the wafer along the respective plurality of slits, and then passing the plurality of the nozzles along the respective slits to form severing cuts 5 in the wafer, and simultaneously sucking the sand accumulating in the respective slits out of the same.

Patent No 3, 9", 97

and that said Letters Patent are hereby Dated 00 Inventor (s) REII IER EMEIS It is ac iced that error appear Germany Signed and sealed this nth day of (SEAL) Attest:

EDWARD M.FLETCH\3R,JR. Attesting Officer in the a corrected as shown below:

tober 3, 1972 Dove-identified patent the printed specification there should Berlin and Munchen,

June 197 C MARSHALL DANN Commissioner of Patents

Claims (2)

1. The method of subdividing a thin semiconductive crystal wafer into individual semiconductor members by forming cuts in the wafer perpendicularly to the faces thereof which comprises cementing a face of the wafer onto a planar support formed with an array of slits extending in direction in which the cuts are to be formed in the wafer, disposing a sandblast nozzle having an elongated outlet opening, that is narrower than the width of the slits formed in the support directly above the opposite face of the wafer and in alignment with one of the slits, blasting a jet of sand having a grain size of substantially 10 to 30 Mu from the nozzle onto the opposite face of the wafer along the respective slit, and then passing the nozzle along the respective slit and parallel to the faces of the wafer so as to form a severing cut in the wafer, and simultaneously removing sand by suction from the respective slit wherein sand from the nozzle has accumulated.
2. The method of claim 1 wherein the slits are arranged in parallel criss-cross relationship, and which comprises disposing a plurality of the sandblast nozzles in alignment with a corresponding plurality of the slits, blasting a corresponding plurality of jets of the sand from the nozzles onto the wafer along the respective plurality of slits, and then passing the plurality of the nozzles along the respective slits to form severing cuts in the wafer, and simultaneously sucking the sand accumulating in the respective slits out of the same.
US3694972A 1969-06-20 1970-06-26 Method and apparatus for subdividing a crystal wafer Expired - Lifetime US3694972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19691931335 DE1931335B2 (en) 1969-06-20 1969-06-20 A method for separating a body from a scheibenfoermigen crystal and apparatus for carrying out this method

Publications (1)

Publication Number Publication Date
US3694972A true US3694972A (en) 1972-10-03

Family

ID=5737534

Family Applications (1)

Application Number Title Priority Date Filing Date
US3694972A Expired - Lifetime US3694972A (en) 1969-06-20 1970-06-26 Method and apparatus for subdividing a crystal wafer

Country Status (6)

Country Link
US (1) US3694972A (en)
JP (1) JPS5013510B1 (en)
DE (1) DE1931335B2 (en)
FR (1) FR2046967B1 (en)
GB (1) GB1259249A (en)
NL (1) NL7008966A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778935A (en) * 1972-01-26 1973-12-18 Pennwalt Corp Abrading apparatus with rotary index table
US3866357A (en) * 1974-06-06 1975-02-18 Pennwalt Corp Abrading apparatus
US3888054A (en) * 1973-11-16 1975-06-10 Western Electric Co Method for abrasive cutting in a liquid
US3953941A (en) * 1973-10-11 1976-05-04 Bbc Brown Boveri & Company Limited Method and apparatus for making a groove in a semi-conductor element
US4047286A (en) * 1975-05-20 1977-09-13 Siemens Aktiengesellschaft Process for the production of semiconductor elements
US4738056A (en) * 1984-12-28 1988-04-19 Fuji Seiki Machine Works, Ltd. Method and blasting apparatus for preparation of silicon wafer
US5052155A (en) * 1989-08-10 1991-10-01 Emc Technology, Inc. Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material
US5505653A (en) * 1992-10-17 1996-04-09 Saechsische Werkzeug Und Sondermaschinen Gmbh Abrasive/water jet cutting apparatus
US6676486B1 (en) * 2000-10-20 2004-01-13 Lightwave Microsystems Corporation Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials
WO2004025724A1 (en) * 2002-09-13 2004-03-25 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US20050126472A1 (en) * 2002-09-13 2005-06-16 Towa Intercon Technology, Inc. Jet singulation
US20060180579A1 (en) * 2005-02-11 2006-08-17 Towa Intercon Technology, Inc. Multidirectional cutting chuck
US20070170597A1 (en) * 2003-08-18 2007-07-26 Markus Vos Process for producing components
EP1873824A1 (en) * 2002-09-13 2008-01-02 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US20080282855A1 (en) * 2007-05-16 2008-11-20 Disco Corporation Water jet cutting method
US20090013839A1 (en) * 2007-06-14 2009-01-15 Disco Corporation Water jet processing method
US20130303053A1 (en) * 2012-05-08 2013-11-14 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656791A (en) * 1984-09-27 1987-04-14 Libbey-Owens-Ford Company Abrasive fluid jet cutting support
CA1252711A (en) * 1984-09-27 1989-04-18 Richard A. Herrington Ultra-high pressure abrasive jet cutting of glass
US4702042A (en) * 1984-09-27 1987-10-27 Libbey-Owens-Ford Co. Cutting strengthened glass

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US587892A (en) * 1897-08-10 M a t iiia s w a l t e k
US1664159A (en) * 1926-04-23 1928-03-27 Elroy A Chase Apparatus for producing ornamental background on stone
GB794528A (en) * 1955-10-07 1958-05-07 William Howard Mead Improvements in receivers for particulate material
US3187412A (en) * 1963-04-26 1965-06-08 Gen Electric Method of mounting and aligning transducers on delay lines
US3205104A (en) * 1961-07-10 1965-09-07 Litton Industries Inc Fabrication of interdigital delay lines
US3262234A (en) * 1963-10-04 1966-07-26 Int Rectifier Corp Method of forming a semiconductor rim by sandblasting
US3453781A (en) * 1966-03-30 1969-07-08 Ibm Tailoring microminiature components
US3516204A (en) * 1967-08-21 1970-06-23 Pennwalt Corp Abrading apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US587892A (en) * 1897-08-10 M a t iiia s w a l t e k
US1664159A (en) * 1926-04-23 1928-03-27 Elroy A Chase Apparatus for producing ornamental background on stone
GB794528A (en) * 1955-10-07 1958-05-07 William Howard Mead Improvements in receivers for particulate material
US3205104A (en) * 1961-07-10 1965-09-07 Litton Industries Inc Fabrication of interdigital delay lines
US3187412A (en) * 1963-04-26 1965-06-08 Gen Electric Method of mounting and aligning transducers on delay lines
US3262234A (en) * 1963-10-04 1966-07-26 Int Rectifier Corp Method of forming a semiconductor rim by sandblasting
US3453781A (en) * 1966-03-30 1969-07-08 Ibm Tailoring microminiature components
US3516204A (en) * 1967-08-21 1970-06-23 Pennwalt Corp Abrading apparatus

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778935A (en) * 1972-01-26 1973-12-18 Pennwalt Corp Abrading apparatus with rotary index table
US3953941A (en) * 1973-10-11 1976-05-04 Bbc Brown Boveri & Company Limited Method and apparatus for making a groove in a semi-conductor element
US3888054A (en) * 1973-11-16 1975-06-10 Western Electric Co Method for abrasive cutting in a liquid
US3866357A (en) * 1974-06-06 1975-02-18 Pennwalt Corp Abrading apparatus
US4047286A (en) * 1975-05-20 1977-09-13 Siemens Aktiengesellschaft Process for the production of semiconductor elements
US4738056A (en) * 1984-12-28 1988-04-19 Fuji Seiki Machine Works, Ltd. Method and blasting apparatus for preparation of silicon wafer
US5052155A (en) * 1989-08-10 1991-10-01 Emc Technology, Inc. Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material
US5505653A (en) * 1992-10-17 1996-04-09 Saechsische Werkzeug Und Sondermaschinen Gmbh Abrasive/water jet cutting apparatus
US6676486B1 (en) * 2000-10-20 2004-01-13 Lightwave Microsystems Corporation Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials
US6676485B1 (en) * 2000-10-20 2004-01-13 Lightwave Microsystems Corporation Wet injecting fine abrasives for water jet curved cutting of very brittle materials
EP1873824A1 (en) * 2002-09-13 2008-01-02 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US20050126472A1 (en) * 2002-09-13 2005-06-16 Towa Intercon Technology, Inc. Jet singulation
US20050145166A1 (en) * 2002-09-13 2005-07-07 Towa Intercon Tools, Inc. Jet singulation
US7059940B2 (en) 2002-09-13 2006-06-13 Towa Intercon Technology, Inc. Jet singulation
WO2004025724A1 (en) * 2002-09-13 2004-03-25 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US20060194514A1 (en) * 2002-09-13 2006-08-31 Towa Intercon Technology, Inc., A California Corporation Jet singulation
US7153186B2 (en) 2002-09-13 2006-12-26 Towa Intercon Technology, Inc. Jet singulation
US7357694B2 (en) 2002-09-13 2008-04-15 Towa Corporation Jet singulation
US7736995B2 (en) 2003-08-18 2010-06-15 Schott Ag Process for producing components
US20070170597A1 (en) * 2003-08-18 2007-07-26 Markus Vos Process for producing components
CN1835823B (en) 2003-08-18 2011-02-09 肖特股份公司 Method for the production of components
US20060180579A1 (en) * 2005-02-11 2006-08-17 Towa Intercon Technology, Inc. Multidirectional cutting chuck
US20080282855A1 (en) * 2007-05-16 2008-11-20 Disco Corporation Water jet cutting method
US7585201B2 (en) * 2007-06-14 2009-09-08 Disco Corporation Water jet processing method
US20090013839A1 (en) * 2007-06-14 2009-01-15 Disco Corporation Water jet processing method
US20130303053A1 (en) * 2012-05-08 2013-11-14 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate
US9333624B2 (en) * 2012-05-08 2016-05-10 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate and protecting regions on the substrate
US20160243673A1 (en) * 2012-05-08 2016-08-25 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate

Also Published As

Publication number Publication date Type
NL7008966A (en) 1970-12-22 application
FR2046967B1 (en) 1974-09-20 grant
GB1259249A (en) 1972-01-05 application
DE1931335A1 (en) 1970-12-23 application
DE1931335B2 (en) 1976-03-11 application
FR2046967A1 (en) 1971-03-12 application
JPS5013510B1 (en) 1975-05-20 grant

Similar Documents

Publication Publication Date Title
US4589194A (en) Ultrasonic scribing of thin film solar cells
US3288662A (en) Method of etching to dice a semiconductor slice
US3437543A (en) Apparatus for polishing
US6295978B1 (en) Method for reducing damage to wafer cutting blades during wafer dicing
US5901399A (en) Flexible-leaf substrate edge cleaning apparatus
US3979230A (en) Method of making isolation grids in bodies of semiconductor material
US3765969A (en) Precision etching of semiconductors
US3816906A (en) Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3040489A (en) Semiconductor dicing
US5196378A (en) Method of fabricating an integrated circuit having active regions near a die edge
US3133336A (en) Semiconductor device fabrication
US6582983B1 (en) Method and wafer for maintaining ultra clean bonding pads on a wafer
US6399464B1 (en) Packaging die preparation
US20060286769A1 (en) Wafer demounting method, wafer demounting device, and wafer demounting and transferring machine
US4971920A (en) Gettering method for semiconductor wafers
US6521513B1 (en) Silicon wafer configuration and method for forming same
US3579057A (en) Method of making a semiconductor article and the article produced thereby
US5096855A (en) Method of dicing semiconductor wafers which produces shards less than 10 microns in size
JP2003179005A (en) Method and device for separating semiconductor devices
US20050101109A1 (en) Controlled fracture substrate singulation
US2970730A (en) Dicing semiconductor wafers
US5003374A (en) Semiconductor wafer
JP2002087836A (en) Method of machining brittle non-metallic material
US6227944B1 (en) Method for processing a semiconductor wafer
US6250192B1 (en) Method for sawing wafers employing multiple indexing techniques for multiple die dimensions