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Fabrication of insulated gate field-effect transistors involving ion implantation

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US3590471A
US3590471A US3590471DA US3590471A US 3590471 A US3590471 A US 3590471A US 3590471D A US3590471D A US 3590471DA US 3590471 A US3590471 A US 3590471A
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source
drain
type
gate
layer
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Martin P Lepselter
Alfred U Macrae
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Nokia Bell Labs
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Nokia Bell Labs
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/139Schottky barrier
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Abstract

An insulated gate field-effect transistor is made which utilizes both Schottky barrier connections and ion-implanted zones. The resultant structure incorporates source and drain zones, which are formed by ion implantation and whose spacing is fixed by the gate electrode, and source and drain electrodes which make ohmic connection to the implanted source and drain zones and rectifying connections to unimplanted material.

Description

I United States Patent 1 1 3,590,471

[72] Inventors Martin P. Lepselter [56] References Cited New Providence; UNITED STATES PATENTS Alfred U. MacRae, Berkeley Helghts, both 3,252,003 5/1966 Schmidt 7/235 UX 3,290,127 l2/l966 Kahng et al. 317/235 UX 1 1 p 796,404 9 3,463,971 8/1969 Soshea m1. 317/235 ux [221 FM Feb-41196 3,472,712 10/1969 Bower............,.1.1.., 29/578 x [45] Patented July 6, 1971 [73] Assignee Bell Telephone Laboratories, Incorporated Primary Exammer-John F. Campbell Murray Hill, NJ. Assistant ExaminerW. Tupman Attorneys-R. .I. Guenther and Arthur J. Torsiglieri [54] FABRICATION 0F INSULATED GATE FIELD- a EFFECT TRANSISTORS INVOLVING [0N IMPIjANTATIOIF ABSTRACT: An insulated gate fieldl-effect transistor is made 4 Chums 5 Draw'ng Flgs' which utilizes both Schottky barrier connections and ion-im- [52] U.S. Cl 29/571, lanted zones. The resultant structure incorporates source 29/578,29/590, 148/ 1.5, 317/235 and drain zones, which are formed by ion implantation and [5 1] Int. Cl B0lj 17/00, whose spacing is fixed by the gate electrode, and source and H01 g 13/00 drain electrodes which make ohmic connection to the im- [50] Field of Search 29/571, lanted source and drain zones and rectifying connections to 57 8; 317/235 unimplanted material.

Ill/II/I/ II/ III PATENTEUJUL SIB?! 3,590,471

FIG. [8

FIG. IC

FIG. ID

MP LEPSEL 75R INVENTORS A. a MAC RAE ATTORNEY FABRICATION OF INSULATED GATE FIELD-EFFECT TRANSISTORS INVOLVING ION IMPLANTATION FIELD OF THE INVENTION This invention relates to insulated gate field-effect transistors and to a process for their manufacture.

BACKGROUND OF THE INVENTION One form of insulated gate field-effect transistor typically comprises a semiconductive layer which includes source and drain zones of like conductivity type which are separated by an intermediate region of the opposite conductivity type. Source and drain electrodes make ohmic connection to the respective source and drain zones and a gate electrode is deposited over the intermediate region but spaced from the semiconductor by an insulating layer. A voltage applied to the gate electrode is used to introduce into the intermediate region charge carriers of the type in the majority in the source and drain zones to permit current flow therebet ween.

In the interest of high frequency response, it is desirable to keep the length of the intermediate region short and to keep the interelectrode capacitances small. To the latter end, it is important to minimize the overlap of the gate electrode with the source and drain zones.

In the interest of reliable manufacture, it is advantageous to avoid the use of high temperatures in the later steps of the fabrication process since these tend to cause deterioration of the insulating layer.

The present invention is directed to a fabrication process which permits achieving an insulated gate field-effect transistor with good high frequency response in a reliable fashion.

SUMMARY OF THE INVENTION In accordance with an illustrative embodiment of the inventio'n, a genetic oxide layer is formed over one surface of an N- type silicon crystal and spaced source and drain contact holes are formed in the oxide layer. Platinum-silicide films are then deposited in the contact holes to form rectifying barrier contacts with the underlying N-type silicon. Metallic layers are then deposited over portions of the platinum-silicide films to form the source and drain electrodes and over a portion of the oxide layer overlying the region between the source and drain contact holes to form the gate electrode. Then the surface is irradiated with a beam of boron ions to implant such ions selectively in the wafer. In particular, the thicknesses of the various films and layers and the energies of the ions are such that ions in significant numbers do not penetrate the wafer in portions underlying the source, drain, and gate metallic electrodes but do penetrate in portions not masked by such electrodes. As a consequence there are formed in the wafer a pair of P-type zones spaced apart by the N-type region underlying the gate electrode. These two P-type zones make ohmic connection to the platinum silicide films in the source and drain contact holes and serve I as the source and drain regions, respectively.

It is characteristic of this fabrication process that it avoids high temperature treatments subsequent to the formation of the oxide. There is reduced the need for critical mask alignments, the only really critical element being the gate electrode which is used as a mask in fixing the spacing between the source and drain regions. It can be appreciated that this permits close spacing of the source and drain zones together with relatively larger spacing of the source and drain electrodes. Moreover despite the simplification in the processing there is achieved the advantage of having discrete source and drain regions.

DESCRIPTION OF THE DRAWING FIGS. IA through ID show a semiconductive wafer in various stages of its processing to incorporate therein an insulated gate field-effect transistor in accordance with an illustrative embodiment of the invention; and

FIG. 2 shows a plan view of the end product of the process illustrated by FIGS. IA through ID.

DESCRIPTION OF THE INVENTION In the fabrication of an illustrative embodiment of the invention, a oriented silicon crystal having a resistivity of about one ohm-centimeter is heated in an oxidizing atmosphere to form on one surface thereof a genetic silicon oxide layer of about I000 Angstroms thickness and there is then opened in this layer spaced source and drain contact holes by photolithographic techniques. These steps may be of the kind which typically have been used in the fabrication of silicon insulated gate field-effect transistors. The resultant is shown in FIG. 1A with the upper surface of silicon wafer 11 being covered with an oxide insulating layer 12 provided with spaced source and drain contact openings 13 and I4.

Thereafter, there is deposited within each of these openings a film of a material which forms a rectifying or Schottky barrier with the N-type silicon being contacted. Illustratively, this material is platinum silicide, which is a metallic substance which forms strong and intimate bond with silicon and which has a work function insuring a rectifying connection to N-type silicon and an ohmic connection to P-type silicon. Advantageously this film is formed by evaporating a layer of platinum 400 Angstroms thick over the surface of the crystal and then heating to 600 C. for 5 minutes as a result of which the platinum in contact with the exposed silicon in the source and drain contact openings is sintered thereto to form platinum silicide while the platinum overlying the oxide does not adhere thereto and can thereafter be readily removed. In FIG. 18 platinum silicide films l5 and 16 are shown in source and drain contact holes I3 and 14, respectively, the oxide layer 12 being free of the platinum silicide.

Next there are deposited the source, drain, and gate electrodes. The gate electrode is positioned to overlie the central portion of the oxide layer lying between the source and drain contact openings and the source and drain electrodes are positioned to overlie portions of the platinum silicide films, leaving uncovered portions of these films proximate the gate electrode as seen in FIG. 1C where electrodes 17, I8 and 19 are the source, drain and gate electrodes, respectively. These electrodes advantageously comprise composite layers of titanium, platinum and gold, the titanium being bottommost and serving to provide intimate contact with the oxide, the platinum being intermediate and serving primarily as a barrier between the gold and the silicon, and the gold being uppermost and serving to facilitate connection to these electrodes of suitable leads. Advantageously, the composite layer may be about one micron thick with the major part of the thickness being contributed by the gold. The manner of provision of electrodes of this kind is now well known and, for example, may be in the fashion described in US. Pat. Nos. 3,287,612 and 3,335,338 which issued to M. P. Lepselter on Nov. 22, I966 and Aug. 8, I967, respectively.

Next, the wafer is subjected to a beam of acceptor ions for ion implantation in known manner. The energy of the ions is adjusted to be such that none are able to penetrate the relatively impervious electrodes while a substantial number are able to penetrate the relatively permeable platinum silicide and oxide layers, as a result of which there are formed in the wafer boron-rich P-type zones 20 and 21 as seen in FIG. 1D which underlie the portion of the wafer extending between the source and drain electrodes except where covered by the gate electrode.

In one instance, the wafer was irradiated first with a beam of kiloelectron volts energy and a total dose of 1.5Xl0 boron ions per square centimeter and then with a beam of 50 kiloelectron volts energy and total dose of 1.0Xl0 boron ions per square centimeters. Heating a wafer so treated at 350 C. for 30 minutes reduced the radiation damage produced by the ions and left P-type regions of about 10" boron atoms per cubic centimeter about 4000 Angstroms deep. With such a doping, the contact between the platinum silicide films to the boron-rich regions is essentially ohmic. With respect to the unimplanted N-type regions, the contact will remain rectifying. As a consequence, the area of each of the source and drain electrodes to the semiconductor is determined effectively by the area of contact between the platinum silicide film and the contiguous P-type region, which area can be quite small. This in turn makes it possible to keep the interelectrode capacitances small and the high frequency response good.

In this same illustrative example, the source and drain contact openings are 50 microns wide, 200 microns long, and are spaced about 25 microns apart. The gate electrode is about 5 microns wide and 250 microns long and located centrally between the source and drain contact openings. The source and drain electrodes are such as to leave uncovered strips about microns wide of the platinum silicide films so that the effective ohmic contact area of each of the source and drain connections is a strip IOmicrons wide and 200 microns long.

FIG. 2 shows a plan view of the resultant transistor illustrating more clearly the disposition of the source, drain and gate electrodes, l7, l8 and 19, respectively, and the source and drain contact holes 13 and 14, respectively, which are covered with the platinum silicide films.

In many instances it will be desirable to form an array of such transistors in a single wafer with one sequence of steps and then to cut up the wafer into a number of dice each containing one or more such transistors,

In other instances, it will be advantageous to form one or more such field effect transistors in a localized portion of a wafer and to form additionally in other portions one or more other circuit components, such as resistors, capacitors, diodes or bipolar transistors which are interconnected with the fieldeffect transistors, preferably by way of metallic coatings of the type used to form electrodes 17, I8 and 19.

In some instances it may be advantageous to form an N-type epitaxial layer on a P-type substrate and thereafter to localize the field-effect transistor described in such epitaxial layer rather than in a crystal whose bulk is N-type.

In some instances, it may be preferable to form the complementary structure utilizing N-type source and drain regions spaced by a normally P-type region and this can be readily done by obvious modifications including the implantation of donors ions into initially P-type material and the use of an appropriatc metal, such as zirconium, for forming rectifying barrier contacts to P-type material.

Similarly, it is feasible to utilize different materials for the insulation layer, particularly at the region underlying the gate electrode. For example, it is known to employ a composite silicon oxide and aluminum oxide layer to get a lower threshold. Silicon nitride has also proved useful for the gate insulation to minimize sodium contamination problems.

Similarly it is feasible to employ a variety of electrode materials and/or a variety of doping ions, and different semiconductors may be readily employed.

What we claim is: I 1. A method of fabricating an insulated gate field-effect transistor comprising the steps of forming on a surface portion of one conductivity type of semiconductive wafer an insulating layer which includes first and second spaced openings,

forming within each opening a layer of conductive material which forms a rectifying barrier with the contiguous portion of the semiconductive wafer,

depositing a first electrode over a limited portion of the layer of conductive material which is within the first opening, a second electrode over a limited portion of the layer of conductive material which is within the second opening and a third electrode over a portion of the insulating layer between the first and second spaced openings,

and bombarding the surface portion of the semiconductive wafer with ions to convert selectively the material unprotected by said electrodes to the opposite conductivity type, whereby each of the layers of conductive material forms ohmic connection to that part of the contiguous portion of the semiconductive wafer wherein have been implanted bombarding ions and there results a pair of zones of the opposite conductivity separated by a region of the one conductivity type whose length is determined by the width of the third electrode.

2. The method of claim 1 in which the semiconductive wafer is monocrystalline silicon and the insulating layer includes a layer of silicon oxide.

3. The method of claim 2 in which the surface portion of the silicon wafer is N-type and the layers of the conductive material are of platinum silicide.

4. The method of claim 3 in which the ions implanted are boron and the implanted parts of the wafer are made P-type.

Claims (3)

  1. 2. The method of claim 1 in which the semiconductive wafer is monocrystalline silicon and the insulating layer includes a layer of silicon oxide.
  2. 3. The method of claim 2 in which the surface portion of the silicon wafer is N-type and the layers of the conductive material are of platinum silicide.
  3. 4. The method of claim 3 in which the ions implanted are boron and the implanted parts of the wafer are made P-type.
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US3718916A (en) * 1970-02-12 1973-02-27 Nippon Electric Co Semiconductor memory element
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
US3768151A (en) * 1970-11-03 1973-10-30 Ibm Method of forming ohmic contacts to semiconductors
US3775192A (en) * 1970-12-09 1973-11-27 Philips Corp Method of manufacturing semi-conductor devices
US3804681A (en) * 1967-04-18 1974-04-16 Ibm Method for making a schottky-barrier field effect transistor
US3889359A (en) * 1973-12-10 1975-06-17 Bell Telephone Labor Inc Ohmic contacts to silicon
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
US3938178A (en) * 1971-12-22 1976-02-10 Origin Electric Co., Ltd. Process for treatment of semiconductor
US3938243A (en) * 1973-02-20 1976-02-17 Signetics Corporation Schottky barrier diode semiconductor structure and method
US3996657A (en) * 1974-12-30 1976-12-14 Intel Corporation Double polycrystalline silicon gate memory device
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4135295A (en) * 1976-03-01 1979-01-23 Advanced Micro Devices, Inc. Process of making platinum silicide fuse links for integrated circuit devices
US4179792A (en) * 1978-04-10 1979-12-25 The United States Of America As Represented By The Secretary Of The Army Low temperature CMOS/SOS process using dry pressure oxidation
US4280271A (en) * 1979-10-11 1981-07-28 Texas Instruments Incorporated Three level interconnect process for manufacture of integrated circuit devices
US4300152A (en) * 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4354307A (en) * 1979-12-03 1982-10-19 Burroughs Corporation Method for mass producing miniature field effect transistors in high density LSI/VLSI chips
US4373251A (en) * 1980-08-27 1983-02-15 U.S. Philips Corporation Method of manufacturing a semiconductor device
US4400866A (en) * 1980-02-14 1983-08-30 Xerox Corporation Application of grown oxide bumper insulators to a high-speed VLSI SASMESFET
EP0123936A1 (en) * 1983-04-01 1984-11-07 Hitachi, Ltd. Semiconductor device
US4485550A (en) * 1982-07-23 1984-12-04 At&T Bell Laboratories Fabrication of schottky-barrier MOS FETs
US4521795A (en) * 1981-12-07 1985-06-04 U.S. Philips Corporation Insulated-gate field-effect transistors
US4665414A (en) * 1982-07-23 1987-05-12 American Telephone And Telegraph Company, At&T Bell Laboratories Schottky-barrier MOS devices
US4871686A (en) * 1988-03-28 1989-10-03 Motorola, Inc. Integrated Schottky diode and transistor
US5612236A (en) * 1987-04-14 1997-03-18 Kabushiki Kaisha Toshiba Method of forming a silicon semiconductor device using doping during deposition of polysilicon
US5670820A (en) * 1987-05-01 1997-09-23 Inmos Limited Semiconductor element incorporating a resistive device
US5874352A (en) * 1989-12-06 1999-02-23 Sieko Instruments Inc. Method of producing MIS transistors having a gate electrode of matched conductivity type
US6043537A (en) * 1997-01-31 2000-03-28 Samsung Electronics, Co., Ltd. Embedded memory logic device using self-aligned silicide and manufacturing method therefor
US20040026687A1 (en) * 2002-08-12 2004-02-12 Grupp Daniel E. Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US20050093027A1 (en) * 2002-08-12 2005-05-05 Grupp Daniel E. Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US20060084232A1 (en) * 2002-08-12 2006-04-20 Grupp Daniel E Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor
US20070026591A1 (en) * 2002-08-12 2007-02-01 Grupp Daniel E Insulated gate field effect transistor having passivated schottky barriers to the channel
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor

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US4102733A (en) * 1977-04-29 1978-07-25 International Business Machines Corporation Two and three mask process for IGFET fabrication
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Publication number Priority date Publication date Assignee Title
US3804681A (en) * 1967-04-18 1974-04-16 Ibm Method for making a schottky-barrier field effect transistor
US3718916A (en) * 1970-02-12 1973-02-27 Nippon Electric Co Semiconductor memory element
US3768151A (en) * 1970-11-03 1973-10-30 Ibm Method of forming ohmic contacts to semiconductors
US3775192A (en) * 1970-12-09 1973-11-27 Philips Corp Method of manufacturing semi-conductor devices
US3938178A (en) * 1971-12-22 1976-02-10 Origin Electric Co., Ltd. Process for treatment of semiconductor
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
US3938243A (en) * 1973-02-20 1976-02-17 Signetics Corporation Schottky barrier diode semiconductor structure and method
US3889359A (en) * 1973-12-10 1975-06-17 Bell Telephone Labor Inc Ohmic contacts to silicon
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
US3996657A (en) * 1974-12-30 1976-12-14 Intel Corporation Double polycrystalline silicon gate memory device
US4135295A (en) * 1976-03-01 1979-01-23 Advanced Micro Devices, Inc. Process of making platinum silicide fuse links for integrated circuit devices
US4179792A (en) * 1978-04-10 1979-12-25 The United States Of America As Represented By The Secretary Of The Army Low temperature CMOS/SOS process using dry pressure oxidation
US4280271A (en) * 1979-10-11 1981-07-28 Texas Instruments Incorporated Three level interconnect process for manufacture of integrated circuit devices
US4354307A (en) * 1979-12-03 1982-10-19 Burroughs Corporation Method for mass producing miniature field effect transistors in high density LSI/VLSI chips
US4400866A (en) * 1980-02-14 1983-08-30 Xerox Corporation Application of grown oxide bumper insulators to a high-speed VLSI SASMESFET
US4300152A (en) * 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4373251A (en) * 1980-08-27 1983-02-15 U.S. Philips Corporation Method of manufacturing a semiconductor device
US4521795A (en) * 1981-12-07 1985-06-04 U.S. Philips Corporation Insulated-gate field-effect transistors
US4485550A (en) * 1982-07-23 1984-12-04 At&T Bell Laboratories Fabrication of schottky-barrier MOS FETs
US4665414A (en) * 1982-07-23 1987-05-12 American Telephone And Telegraph Company, At&T Bell Laboratories Schottky-barrier MOS devices
EP0123936A1 (en) * 1983-04-01 1984-11-07 Hitachi, Ltd. Semiconductor device
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FR2030293B1 (en) 1976-07-23 grant
BE745398A1 (en) grant
NL7001503A (en) 1970-08-06 application
FR2030293A1 (en) 1970-11-13 application
GB1289786A (en) 1972-09-20 application
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US3652908A (en) 1972-03-28 grant
BE745398A (en) 1970-07-16 grant

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