US3231795A - Low inductance and capacitance electrical cartridge and method of manufacture - Google Patents

Low inductance and capacitance electrical cartridge and method of manufacture Download PDF

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Publication number
US3231795A
US3231795A US231420A US23142062A US3231795A US 3231795 A US3231795 A US 3231795A US 231420 A US231420 A US 231420A US 23142062 A US23142062 A US 23142062A US 3231795 A US3231795 A US 3231795A
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United States
Prior art keywords
cartridge
spring means
spring
manufacture
cover
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Expired - Lifetime
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US231420A
Inventor
Jr John E Steinhelper
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Bendix Corp
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Bendix Corp
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Publication date
Application filed by Bendix Corp filed Critical Bendix Corp
Priority to US231420A priority Critical patent/US3231795A/en
Priority to GB40502/63A priority patent/GB1016976A/en
Priority to FR950920A priority patent/FR1380633A/en
Priority to US495740A priority patent/US3461458A/en
Application granted granted Critical
Publication of US3231795A publication Critical patent/US3231795A/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Definitions

  • This invention pertains to a low inductance and low capacitance cartridge for holding an electrical element under spring pressure which is constructed to minimize the effect of the spring inductance and capacitance and its method of manufacture.
  • a symmetrical spring member such as a bellows spring provides a low cartridge inductance, for example a maximum of two tenths nanohenries, low cartridge capacitance, for example three tenths picofarads, even in an exceptionally small cartridge such as one having a total volume of one ten thousandth of a cubic inch.
  • such a cartridge is of extremely rugged design.
  • a further object is the method of fluxing in a sealed volume wherein hydrogen is used as the flux because hydrogen vapors are substantially more inert than the vapors of conventional solder fluxes.
  • a still further object of this invention is a method of fluxing in a sealed volume wherein the pressure exteriorally of the volume is reduced prior to freezing of the solder so that the contracting vapors inside of the volume do not create a pressure differential across the freezing solder which would draw gas through the solder thereby causing blow holes.
  • FIGURE 1 is a view in perspective of a preferred embodiment of this invention
  • FIGURE 2 is a section taken at 22 of FIGURE 1;
  • FIGURE 3 is an elevational view of the bellows spring used in this invention.
  • FIGURE 1 Shown in FIGURE 1 is a perspective view of a cartridge 20 having a cover 22 and a support 23.
  • Cover 22 has an annular groove 24 formed therein and cover 23 has an annular groove 25 similar to and opposed to groove 24.
  • Covers 22 and 23 are made of tellurium copper and are spaced apart by an insulative cylinder 26 which is soldered at its ends in the grooves 24 and 25.
  • Cylinder 26 in this preferred embodiment is a ceramic material having approximately 99 percent alumina (A1 0 Shown in FIGURE 2 of the drawing is post 27 in cover 22 which is defined by the inner walls of annular groove 24 and centrally disposed of support 23 is post 28 which is defined by the inner walls of annular groove 25.
  • a bellows spring 29 which is made of gold-plated nickel is fitted over post 27 and soldered thereto at one end and has a copper disc 30 soldered to the other end thereof.
  • the bellows spring 29 has a wall thickness of .0003 inch and is extremely flexible.
  • the spring 29 is perfectly symmetrical about the center line of the cartridge 20 giving the aforementioned low inductance and capacitance values.
  • Post or boss 28 has a gold plate coated or formed thereon and a silicon die 33 having a mesa 34 is soldered to boss 28. This places mesa 34 in spring contact with plate 30 providing an exceptionally low sprung mass on mesa 30 and therefore any vibration, shock, or acceleration will not place any large stress or strain on the silicon mesa 34.
  • a solder washer is placed in each of annular grooves 24 and 25, while disc 30 is precoated with solder and the base portion of die 33 is precoated with solder.
  • the parts are then assembled and the assembly is placed in a furnace where the oxygen is forced out by feeding nitrogen into the furnace several times and after each time drawing a vacuum on the furnace.
  • Hydrogen is then fed into the furnace and reduces the oxides on the surfaces of all of the components hence acting as a flux.
  • the hydrogen flow through the furnace is at two cubic feet per hour.
  • the furnace temperature is regulated at 370 centigrade and held to plus or minus five degrees centigrade of that temperature for five minutes. After five minutes, the hydrogen flow is stopped and according to an object of this invention, a vacuum is drawn on the furnace to prevent a large pressure differential across the molten solder while it is freezing thereby preventing any bubbling through the solder and eliminating resultant blow holes.
  • a further object of this invention is realized since hydrogen is used as the flux, and the hydrogen vapors trapped in the cartridge are substantially inert while the vapors of conventional solder fluxes are chemically harmful to the cartridge parts.
  • a cartridge for an electrical member such as a semiconductor diode comprising a conductive support member for supporting the electrical member
  • symmetrical spring means being connected to said cover and in spring contact with said electrical member, with said spring means having rotational symmetry about its axis so that any plane passing through the axis of said spring means will define a cross section identical to a cross section defined by any other plane passing through the axis of said spring means, said symmetrical spring means providing a minimum inductance and capacitance due to said symmetry.
  • said insulative member comprising an insulative cylinder, the annular ends of which are bonded in the 0pposed annular groove of said support and cover,
  • said bellows spring having one open end fitted over the boss on said cover and the opposite end closed,
  • said electrical member comprising a mesa diode having a base and amesa with said base being electrically bonded to the post of said support and the mesa being in electrical spring contact with the closed end of said bellows.

Description

1966 J E. STEINHELPER, JR 3,231,795
LOW INDUCTANCE AND CAPACITANCE ELECTRICAL CARTRIDGE AND METHOD OF MANUFACTURE Filed Oct. 18, 1962 INVENTOR. JOHN E- STEINHELPER, JR. BY
W T ZRNE;
United States Patent LOW INDUCTANCE AND CAPACITANCE ELEC- TRICAL CARTRIDGE AND METHOD OF MANU- FACTURE John E. Steinhelper, Jr., Detroit, Mich., assignor to The Bendix Corporation, Southfield, Mich., a corporation of Delaware Filed Oct. 18, 1962, Ser. No. 231,420 3 Claims. (Cl. 317-234) This invention pertains to a low inductance and low capacitance cartridge for holding an electrical element under spring pressure which is constructed to minimize the effect of the spring inductance and capacitance and its method of manufacture.
It is an object of this invention to provide a low inductance cartridge for an electricalelement such as a mesa diode which has a symmetrical spring member such as a bellows spring, for causing a pressure contact between the electrical element and the cartridge cover which is otherwise insulated from the electrical element. Use of a symmetrical spring member such as a bellows spring provides a low cartridge inductance, for example a maximum of two tenths nanohenries, low cartridge capacitance, for example three tenths picofarads, even in an exceptionally small cartridge such as one having a total volume of one ten thousandth of a cubic inch. In addition, such a cartridge is of extremely rugged design.
A further object is the method of fluxing in a sealed volume wherein hydrogen is used as the flux because hydrogen vapors are substantially more inert than the vapors of conventional solder fluxes.
A still further object of this invention is a method of fluxing in a sealed volume wherein the pressure exteriorally of the volume is reduced prior to freezing of the solder so that the contracting vapors inside of the volume do not create a pressure differential across the freezing solder which would draw gas through the solder thereby causing blow holes.
These and other objects will become more apparent when a preferred embodiment of this invention is considered in connection with the drawings in which:
FIGURE 1 is a view in perspective of a preferred embodiment of this invention;
FIGURE 2 is a section taken at 22 of FIGURE 1; and
FIGURE 3 is an elevational view of the bellows spring used in this invention.
Shown in FIGURE 1 is a perspective view of a cartridge 20 having a cover 22 and a support 23. Cover 22 has an annular groove 24 formed therein and cover 23 has an annular groove 25 similar to and opposed to groove 24. Covers 22 and 23 are made of tellurium copper and are spaced apart by an insulative cylinder 26 which is soldered at its ends in the grooves 24 and 25. Cylinder 26 in this preferred embodiment is a ceramic material having approximately 99 percent alumina (A1 0 Shown in FIGURE 2 of the drawing is post 27 in cover 22 which is defined by the inner walls of annular groove 24 and centrally disposed of support 23 is post 28 which is defined by the inner walls of annular groove 25.
"ice
A bellows spring 29 which is made of gold-plated nickel is fitted over post 27 and soldered thereto at one end and has a copper disc 30 soldered to the other end thereof. In this embodiment the bellows spring 29 has a wall thickness of .0003 inch and is extremely flexible. The spring 29 is perfectly symmetrical about the center line of the cartridge 20 giving the aforementioned low inductance and capacitance values.
Post or boss 28 has a gold plate coated or formed thereon and a silicon die 33 having a mesa 34 is soldered to boss 28. This places mesa 34 in spring contact with plate 30 providing an exceptionally low sprung mass on mesa 30 and therefore any vibration, shock, or acceleration will not place any large stress or strain on the silicon mesa 34.
In the manufacture of the above device, a solder washer is placed in each of annular grooves 24 and 25, while disc 30 is precoated with solder and the base portion of die 33 is precoated with solder. The parts are then assembled and the assembly is placed in a furnace where the oxygen is forced out by feeding nitrogen into the furnace several times and after each time drawing a vacuum on the furnace. Hydrogen is then fed into the furnace and reduces the oxides on the surfaces of all of the components hence acting as a flux. The hydrogen flow through the furnace is at two cubic feet per hour. The furnace temperature is regulated at 370 centigrade and held to plus or minus five degrees centigrade of that temperature for five minutes. After five minutes, the hydrogen flow is stopped and according to an object of this invention, a vacuum is drawn on the furnace to prevent a large pressure differential across the molten solder while it is freezing thereby preventing any bubbling through the solder and eliminating resultant blow holes.
A further object of this invention is realized since hydrogen is used as the flux, and the hydrogen vapors trapped in the cartridge are substantially inert while the vapors of conventional solder fluxes are chemically harmful to the cartridge parts.
Although this invention has been disclosed and illustrated with reference to particular applications, the principles involved are susceptible of numerous other applications which will be apparent to persons skilled in the art. The invention is, therefore, to be limited only as indicated by the scope of the appended claims.
Having thus described my invention, I claim:
1. A cartridge for an electrical member such as a semiconductor diode comprising a conductive support member for supporting the electrical member,
an insulative member,
a conductive cover spaced from said conductive support by said insulative member,
symmetrical spring means being connected to said cover and in spring contact with said electrical member, with said spring means having rotational symmetry about its axis so that any plane passing through the axis of said spring means will define a cross section identical to a cross section defined by any other plane passing through the axis of said spring means, said symmetrical spring means providing a minimum inductance and capacitance due to said symmetry.
3 2. The cartridge of claim 1 wherein said spring means comprisesa bellows spring.
3. The cartridge of claim 2 wherein said support and said cover have opposed annular grooves formed therein, thereby defining opposed bosses on said support and cover,
said insulative member comprising an insulative cylinder, the annular ends of which are bonded in the 0pposed annular groove of said support and cover,
said bellows spring having one open end fitted over the boss on said cover and the opposite end closed,
said electrical member comprising a mesa diode having a base and amesa with said base being electrically bonded to the post of said support and the mesa being in electrical spring contact with the closed end of said bellows.
References Cited by the Eiraminer UNITED STATES PATENTS Matare et a1 317-236 Oliphant et a1. 29-494 Lair 317236 Demit 317-234 Berg et al. 3l7234 Eannarino 3l7234 Hanks et a1. 29-494 Great Britain.
JOHN W. HUCKERT, Primary Examiner. JAMES D. KALLAM, Examiner.

Claims (1)

1. A CARTRIDGE FOR AN ELECTRICAL MEMBER SUCH AS A SEMICONDUCTOR DIODE COMPRISING A CONDUCTIVE SUPPORT MEMBER SUPPORTING THE ELECTRICAL MEMBER, AN INSULATIVE MEMBER, A CONDUCTIVE COVER SPACED FROM SAID CONDUCTIVE SUPPORT BY SAID INSULATIVE MEMBER, SYMMETRICAL SPRING MEANS BEING CONNECTED TO SAID COVER AND IN SPRING CONTACT WITH SAID ELECTRICAL MEMBER WITH SAID SPRING MEANS HAVING ROTATIONAL SYMMETRY ABOUT ITS AXIS SO THAT ANY PLANE PASSING THROUGH THE AXIS OF SAID SPRING MEANS WILL DEFINE A CROSS SECTION IDENTICAL TO A CROSS SECTION DEFINED BY ANY OTHER PLANE PASSING THROUGH THE AXIS OF SAID SPRING MEANS, SAID SYMMETRICAL SPRING MEANS PROVIDING A MINIMUM INDUCTANCE AND CAPACITANCE DUE TO SAID SYMMETRY.
US231420A 1962-10-18 1962-10-18 Low inductance and capacitance electrical cartridge and method of manufacture Expired - Lifetime US3231795A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US231420A US3231795A (en) 1962-10-18 1962-10-18 Low inductance and capacitance electrical cartridge and method of manufacture
GB40502/63A GB1016976A (en) 1962-10-18 1963-10-14 Low inductance and capacitance electrical cartridge and method of manufacture
FR950920A FR1380633A (en) 1962-10-18 1963-10-17 Low inductance and capacitance case for electronic component and its manufacturing method
US495740A US3461458A (en) 1962-10-18 1965-05-28 Method of joining two surfaces

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US231420A US3231795A (en) 1962-10-18 1962-10-18 Low inductance and capacitance electrical cartridge and method of manufacture
US49574065A 1965-05-28 1965-05-28

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3323358A (en) * 1964-06-02 1967-06-06 Bendix Corp Solid state pressure transducer
US3489960A (en) * 1965-04-27 1970-01-13 Lucas Industries Ltd Semiconductor rectifiers and rectifier assemblies
US3536964A (en) * 1966-07-18 1970-10-27 Siemens Ag Semiconductor device sealed gas-tight by thixotropic material
DE3143335A1 (en) * 1981-10-31 1983-05-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor device
US4748483A (en) * 1979-07-03 1988-05-31 Higratherm Electric Gmbh Mechanical pressure Schottky contact array
US5638259A (en) * 1992-06-04 1997-06-10 Digital Equipment Corporation Enclosure for electronic modules
US5831827A (en) * 1994-04-28 1998-11-03 Dallas Semiconductor Corporation Token shaped module for housing an electronic circuit
WO2019043870A1 (en) * 2017-08-31 2019-03-07 三菱電機株式会社 Spring electrode for press-pack power semiconductor module
WO2019043753A1 (en) * 2017-08-28 2019-03-07 三菱電機株式会社 Spring electrode

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4732699B2 (en) * 2004-02-17 2011-07-27 神港精機株式会社 Soldering method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569570A (en) * 1948-02-18 1951-10-02 Westinghouse Freins & Signaux Crystal diodes and joint contact device
US2800711A (en) * 1954-08-18 1957-07-30 Wall Colmonoy Corp Brazing method
US2878399A (en) * 1954-11-04 1959-03-17 Itt Crystal semiconductor device
GB876133A (en) * 1957-01-28 1961-08-30 Standard Telephones Cables Ltd Improvements in or relating to high power semiconductor rectifiers
US3030558A (en) * 1959-02-24 1962-04-17 Fansteel Metallurgical Corp Semiconductor diode assembly and housing therefor
US3030557A (en) * 1960-11-01 1962-04-17 Gen Telephone & Elect High frequency tunnel diode
US3047781A (en) * 1956-08-15 1962-07-31 Sarkes Tarzian Diode
US3090117A (en) * 1961-08-15 1963-05-21 Gale S Hanks Method of brazing beryllium

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3091845A (en) * 1954-11-26 1963-06-04 Rohr Corp Method for making honeycomb panel
US2978806A (en) * 1955-04-18 1961-04-11 Rohr Aircraft Corp Apparatus and method for making sandwich panels
GB824256A (en) * 1955-09-20 1959-11-25 British Thomson Houston Co Ltd Improvements relating to the brazing of high melting point metals
US3069766A (en) * 1958-04-04 1962-12-25 Rohr Aircraft Corp Method of brazing metals
US3011254A (en) * 1959-04-06 1961-12-05 North American Aviation Inc Double differential pressure honeycomb sandwich panel brazing
US3083451A (en) * 1959-09-21 1963-04-02 Ass Elect Ind Manchester Ltd Beryllium brazing
US3271852A (en) * 1963-09-06 1966-09-13 Whittaker Corp Method and composition for exothermic brazing of metal joints

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569570A (en) * 1948-02-18 1951-10-02 Westinghouse Freins & Signaux Crystal diodes and joint contact device
US2800711A (en) * 1954-08-18 1957-07-30 Wall Colmonoy Corp Brazing method
US2878399A (en) * 1954-11-04 1959-03-17 Itt Crystal semiconductor device
US3047781A (en) * 1956-08-15 1962-07-31 Sarkes Tarzian Diode
GB876133A (en) * 1957-01-28 1961-08-30 Standard Telephones Cables Ltd Improvements in or relating to high power semiconductor rectifiers
US3030558A (en) * 1959-02-24 1962-04-17 Fansteel Metallurgical Corp Semiconductor diode assembly and housing therefor
US3030557A (en) * 1960-11-01 1962-04-17 Gen Telephone & Elect High frequency tunnel diode
US3090117A (en) * 1961-08-15 1963-05-21 Gale S Hanks Method of brazing beryllium

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3323358A (en) * 1964-06-02 1967-06-06 Bendix Corp Solid state pressure transducer
US3489960A (en) * 1965-04-27 1970-01-13 Lucas Industries Ltd Semiconductor rectifiers and rectifier assemblies
US3536964A (en) * 1966-07-18 1970-10-27 Siemens Ag Semiconductor device sealed gas-tight by thixotropic material
US4748483A (en) * 1979-07-03 1988-05-31 Higratherm Electric Gmbh Mechanical pressure Schottky contact array
DE3143335A1 (en) * 1981-10-31 1983-05-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor device
US5638259A (en) * 1992-06-04 1997-06-10 Digital Equipment Corporation Enclosure for electronic modules
US5831827A (en) * 1994-04-28 1998-11-03 Dallas Semiconductor Corporation Token shaped module for housing an electronic circuit
WO2019043753A1 (en) * 2017-08-28 2019-03-07 三菱電機株式会社 Spring electrode
CN111033725A (en) * 2017-08-28 2020-04-17 三菱电机株式会社 Spring electrode
US11228128B2 (en) * 2017-08-28 2022-01-18 Mitsubishi Electric Corporation Spring electrode
CN111033725B (en) * 2017-08-28 2023-09-05 三菱电机株式会社 spring electrode
WO2019043870A1 (en) * 2017-08-31 2019-03-07 三菱電機株式会社 Spring electrode for press-pack power semiconductor module

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US3461458A (en) 1969-08-12
GB1016976A (en) 1966-01-12

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