US2896086A - Attenuator network - Google Patents

Attenuator network Download PDF

Info

Publication number
US2896086A
US2896086A US669149A US66914957A US2896086A US 2896086 A US2896086 A US 2896086A US 669149 A US669149 A US 669149A US 66914957 A US66914957 A US 66914957A US 2896086 A US2896086 A US 2896086A
Authority
US
United States
Prior art keywords
attenuator
network
resistance
light
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US669149A
Inventor
Wunderman Irwin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Priority to US669149A priority Critical patent/US2896086A/en
Application granted granted Critical
Publication of US2896086A publication Critical patent/US2896086A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24Frequency- independent attenuators
    • H03H7/27Frequency- independent attenuators comprising a photo-electric element

Definitions

  • This invention relates generally to an attenuator network and more particularly to a photoresistive attenuator network.
  • Attenuator networks are employed to introduce a known amount of loss when working with resistive impedances.
  • attenuator networks have input and output impedances which are suitably matched to the associated source and load irnpedances It is a general object of the present invention to provide an attenuator in which the attenuation and impedance may be optically controlled.
  • the photoconductive material forms the resistive elements of the attenuator network.
  • Light serves to vary the resistance of portions of the photoresistive material to give the desired attenuation and terminating impedances.
  • Figure 1 is a plan view of a suitable gridnetwork
  • Figure 2 is a sectional view taken along the line 22 of Figure 1;
  • Figure 3 is a plan view showing a light pattern striking the photoconductive material
  • Figure 4 shows an attenuator in which the light is controlled by means of a filter
  • Figure 5 shows a plan view of a graded light filter which may be used in Figure 4;
  • Figure 6 shows an attenuator which is controlled by means of a light cam
  • Figure 7 shows an attenuator which is controlled by the illumination from a pair of lights
  • Figure 8 shows an attenuator in which the illumination is controlled by mechanical movement of the network
  • Figure 9 is an equivalent circuit diagram of an attenuator constructed in accordance with Figures 1 and 2.
  • the grid network 10 shown in Figure 1 comprises independent conductive grids 11, 12, 13 and 14 which are covered with a layer of photoconductive material, to be presently described.
  • the grid 13 is interlaced with the grid 11 to form one of the optically controlled photoresistive elements of the attenuator
  • the grid 12 is interlaced with the grid 13 to form another optically controlled photoresistive element
  • the grid 14 is interlaced with the grid 13 to form a third photoresistive element.
  • the photoresistive elements, as illustrated, are connected to form an unbalanced T attenuator.
  • An equivalent circuit is shown in Figure 9 wherein the resistors 16, 17 and 18 represent the photoresistive elements which form the T network.
  • Each of the photoresistive elements is indicated as being variable, corresponding to the optical variation of resistance.
  • the grid network is covered with a layer of photoresistive material 15 (Figure 2) whereby adjacent grids are interconnected through the material.
  • the photoresistive material may be in the form of a powder which is dispersed in a binder and applied to the surface to form a relatively thin film.
  • the powder may be dispersed in a carrier and applied to the grid network and the assembly is placed in an oven and baked at a relatively high temperature to form a sintered photoconductive layer.
  • the shaded area 19 represents a light beam which is impinging upon the photoconductive layer 15.
  • the resistance of the layer interconnecting the grids 13 and 14 is lowered.
  • the resistance 18 represents the resistance between these grids.
  • the resistance 18 is considerably lowered whereby maximum attenuation is obtained in the attenuator.
  • the shunt resistance 18 is raised and the series resistances 16 and 17 are lowered.
  • the shunt resistance is at its maximum and the series resistances 16 and 17 are at a minimum.
  • the attenuation introduced by the attenuator is at a minimum.
  • the geometry of the light pattern and the grid can be varied as desired to give the desired variation in resistance between the various elements to thereby control the input and output impedance as well as the attenuation introduced.
  • a light filter 21 is interposed between the light source 22 and the attenuating network 23.
  • the illumination on various portions of the photoresistive material may be altered to control the resistance between the related grid elements.
  • the filter 21 may be graded as shown in Figure 5 whereby a de-- sired variation of resistance with movement of the filter may be obtained.
  • FIG 6 another means is shown for controlling the light incident upon the photoconductive material.
  • An opaque shutter 2-6 having an optical cam 27 is moved as indicated by the arrow 28 between the light source and the material.
  • an opaque bafile 29 is interposed between a pair of lights 31 and 32 which may be independently controlled.
  • the intensity of the lights 31 and 32 the attenuation and impedance of the attenuator network may be controlled.
  • the attenuation may be controlled by moving the attenuator network.
  • the network is pivoted about the point 33.
  • the illumination may be electronically controlled by controlling the motion of the filter or shutter.
  • one or more lights may be arranged whereby the attenuation can be controlled by controlling the power supplied to the light, as illustrated in Figure 7.
  • an attenuator in which the resistance elements are optically controlled.
  • the attenuation may be electronically controlled by electronically controlling the motion of the filter or shutter, or by controlling the intensity of the lights.
  • the resistance may be mechanically controlled by moving the various elements as desired.
  • the resistance arms of the attenuator network may be varied in accordance with any desired function by suitably, contouring the light cam, grading the filter or choosing the shape of the light beam.
  • a network comprising an interlaced grid network of conductive material, photoconductive material serv-g ing to interconnect the grids'of said network, said gridl network comprising four separate grids so disposed as to. form together with said photoconductive.material the resistive elements of a T-network, a light source, and means for controlling the light incident upon said photo-l conductive material whereby the attenuation and impedance level may be controlled as desired.

Description

July 21, 1959 WUNDERMAN 2,896,086
ATTENUATOR NETWORK FiledJuly 1, 1957 F 1 l3 E LIGHT DEAM nor/av F l E E INVENTOR.
/rw/'n Wunaerman l /5 ATTOR/VE Y5 United States Patent Ofiice 2,896,086 Patented July 21, 1 959 ATIENUATOR NETWORK Irwin Wunderman, Mountain View, Calif., assignor to Hewlett-Packard Company, Palo Alto, Calili, a corporation of California Application July 1, 1957, Serial No. 669,149
Claims. (Cl. 250-211) This invention relates generally to an attenuator network and more particularly to a photoresistive attenuator network.
As is well known, attenuator networks are employed to introduce a known amount of loss when working with resistive impedances. In general, attenuator networks have input and output impedances which are suitably matched to the associated source and load irnpedances It is a general object of the present invention to provide an attenuator in which the attenuation and impedance may be optically controlled.
It is another object of the present invention to provide an attenuator network which includes a conductive grid network having a predetermined configuration which is covered by photoconductive material. The photoconductive material forms the resistive elements of the attenuator network. Light serves to vary the resistance of portions of the photoresistive material to give the desired attenuation and terminating impedances.
These and other objects of the invention will become more clearly apparent from the following description when taken in conjunction with the accompanying drawmg.
Referring to the drawing:
Figure 1 is a plan view of a suitable gridnetwork;
Figure 2 is a sectional view taken along the line 22 of Figure 1;
Figure 3 is a plan view showing a light pattern striking the photoconductive material;
Figure 4 shows an attenuator in which the light is controlled by means of a filter;
Figure 5 shows a plan view of a graded light filter which may be used in Figure 4;
Figure 6 shows an attenuator which is controlled by means of a light cam;
Figure 7 shows an attenuator which is controlled by the illumination from a pair of lights;
Figure 8 shows an attenuator in which the illumination is controlled by mechanical movement of the network; and
Figure 9 is an equivalent circuit diagram of an attenuator constructed in accordance with Figures 1 and 2.
The grid network 10 shown in Figure 1 comprises independent conductive grids 11, 12, 13 and 14 which are covered with a layer of photoconductive material, to be presently described. The grid 13 is interlaced with the grid 11 to form one of the optically controlled photoresistive elements of the attenuator, the grid 12 is interlaced with the grid 13 to form another optically controlled photoresistive element, and the grid 14 is interlaced with the grid 13 to form a third photoresistive element. The photoresistive elements, as illustrated, are connected to form an unbalanced T attenuator. An equivalent circuit is shown in Figure 9 wherein the resistors 16, 17 and 18 represent the photoresistive elements which form the T network. Each of the photoresistive elements is indicated as being variable, corresponding to the optical variation of resistance.
The grid network is covered with a layer of photoresistive material 15 (Figure 2) whereby adjacent grids are interconnected through the material. When the photoresistive material is dark, the resistance between grid elements is relatively high. With increasing illumination, the resistance is lowered an amount corresponding to the intensity and area of the illumination. The photoresistive material may be in the form of a powder which is dispersed in a binder and applied to the surface to form a relatively thin film. Alternatively, the powder may be dispersed in a carrier and applied to the grid network and the assembly is placed in an oven and baked at a relatively high temperature to form a sintered photoconductive layer.
Referring to Figure 3, the shaded area 19 represents a light beam which is impinging upon the photoconductive layer 15. The resistance of the layer interconnecting the grids 13 and 14 is lowered. The resistance 18 represents the resistance between these grids. Thus, with the light as shown, the resistance 18 is considerably lowered whereby maximum attenuation is obtained in the attenuator. As the light beam is moved to the left, the shunt resistance 18 is raised and the series resistances 16 and 17 are lowered. With the light illuminating the photoconductive material interconnecting the grids 11, 12 and 13, the shunt resistance is at its maximum and the series resistances 16 and 17 are at a minimum.. The attenuation introduced by the attenuator is at a minimum.
The geometry of the light pattern and the grid can be varied as desired to give the desired variation in resistance between the various elements to thereby control the input and output impedance as well as the attenuation introduced.
Referring to Figure 4, an alternative means for controlling the attenuation is shown. A light filter 21 is interposed between the light source 22 and the attenuating network 23. By moving the filter as indicated by the arrow 24, the illumination on various portions of the photoresistive material may be altered to control the resistance between the related grid elements. The filter 21 may be graded as shown in Figure 5 whereby a de-- sired variation of resistance with movement of the filter may be obtained.
In Figure 6 another means is shown for controlling the light incident upon the photoconductive material. An opaque shutter 2-6 having an optical cam 27 is moved as indicated by the arrow 28 between the light source and the material. In Figure 7 an opaque bafile 29 is interposed between a pair of lights 31 and 32 which may be independently controlled. By controlling the intensity of the lights 31 and 32, the attenuation and impedance of the attenuator network may be controlled. The attenuation may be controlled by moving the attenuator network. Thus, in Figure 8 the network is pivoted about the point 33.
The illumination may be electronically controlled by controlling the motion of the filter or shutter. Alternatively, one or more lights may be arranged whereby the attenuation can be controlled by controlling the power supplied to the light, as illustrated in Figure 7.
It is, of course, apparent that although a three terminal attenuator network has been described that other attenuator networks with more or less terminals may be constructed in accordance with the teaching of the invention.
It is seen that an attenuator is provided in which the resistance elements are optically controlled. The attenuation may be electronically controlled by electronically controlling the motion of the filter or shutter, or by controlling the intensity of the lights. The resistance may be mechanically controlled by moving the various elements as desired. The resistance arms of the attenuator network may be varied in accordance with any desired function by suitably, contouring the light cam, grading the filter or choosing the shape of the light beam.
I claim: I
1. A network comprising an interlaced grid network of conductive material, photoconductive material serv-g ing to interconnect the grids'of said network, said gridl network comprising four separate grids so disposed as to. form together with said photoconductive.material the resistive elements of a T-network, a light source, and means for controlling the light incident upon said photo-l conductive material whereby the attenuation and impedance level may be controlled as desired.
2. An attenuator network as in claim 1 wherein saidlight source emits a beam of predetermined pattern, and means are included for moving said beam relative to the interlaced grid network; V
3. An attenuator network as in claim 1 wherein said References Cited in the file of this patent UNITED STATES PATENTS 1,937,796 Smith et al. Dec. 5, 1933 2,643,297 Goldstein et al. June 23, 1953 2,674,154 Crandell Apr. 6, 1954 2,700,318 Snyder Jan. 25, 1955 2,768,310 Kazan et a1 Oct. 23, 1956 2,836,766 Halstead May 27, ,1958 2,856,589 Kazan Oct, 14,, 1958
US669149A 1957-07-01 1957-07-01 Attenuator network Expired - Lifetime US2896086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US669149A US2896086A (en) 1957-07-01 1957-07-01 Attenuator network

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US669149A US2896086A (en) 1957-07-01 1957-07-01 Attenuator network

Publications (1)

Publication Number Publication Date
US2896086A true US2896086A (en) 1959-07-21

Family

ID=24685248

Family Applications (1)

Application Number Title Priority Date Filing Date
US669149A Expired - Lifetime US2896086A (en) 1957-07-01 1957-07-01 Attenuator network

Country Status (1)

Country Link
US (1) US2896086A (en)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3072795A (en) * 1961-05-12 1963-01-08 Altec Lansing Corp Remote volume control
US3087069A (en) * 1959-08-12 1963-04-23 Giannini Controls Corp Radiation-controlled variable resistance
US3093741A (en) * 1960-09-02 1963-06-11 Meyer John Stirling Photovoltaic device for translating signals
US3121795A (en) * 1961-05-05 1964-02-18 Ncr Co Photovoltaic apparatus for measuring displacement of an element
US3128386A (en) * 1959-09-22 1964-04-07 Harold K Hughes Radiation sensitive low-torque transducer
US3134907A (en) * 1960-02-08 1964-05-26 Gen Dynamics Corp Character generator
US3146352A (en) * 1962-05-18 1964-08-25 Ncr Co Electro-optical multivibrator using electroluminescent and photoconductive elements
US3159750A (en) * 1962-10-01 1964-12-01 Eugene I Kazan Photoelectric pressure transducer
US3171034A (en) * 1961-12-21 1965-02-23 Tomasulo Walter Electro-optical control
US3192393A (en) * 1962-01-17 1965-06-29 Gen Precision Inc Optical phase sensitive incremental encoder
US3193686A (en) * 1963-05-07 1965-07-06 Western Electric Co Photosensitive detectors and methods utilizing photosensitive detectors for positioning articles
US3194967A (en) * 1960-02-26 1965-07-13 Ass Elect Ind Variable electrical impedances
US3196278A (en) * 1961-09-12 1965-07-20 Cutler Hammer Inc Area type photo-electric control device
US3202827A (en) * 1961-06-29 1965-08-24 Cummins Chicago Corp Photocell for detecting limited moving shadow areas
US3222601A (en) * 1962-07-10 1965-12-07 Martin Marietta Corp Antenna beam scanner
US3223846A (en) * 1962-01-02 1965-12-14 Giannini Controls Corp Photosensitive optical fluid stream direction indicator
US3225206A (en) * 1962-03-14 1965-12-21 Borg Warner Photosensitive inspection apparatus for filamentary material
US3258601A (en) * 1966-06-28 Photosensitive variable resistance device
DE1238224B (en) * 1962-03-14 1967-04-06 Borg Warner Device for testing the thickness of thread-like material
US3639769A (en) * 1969-04-10 1972-02-01 William D Clark Photoconductive potentiometer using variable transmittance control strips
US3761718A (en) * 1972-09-07 1973-09-25 Honeywell Inc Detector apparatus using semiconductor laminae
US3806895A (en) * 1971-09-16 1974-04-23 Nippon Musical Instruments Mfg Photoconductive memory device
US3868658A (en) * 1971-09-27 1975-02-25 Siemens Ag Device for optical superheterodyne information reading
US4114035A (en) * 1976-01-30 1978-09-12 Rca Corporation Position encoder employing charge transfer circuit
US4260256A (en) * 1978-11-17 1981-04-07 Eastman Kodak Company Apparatus for measuring illuminance
US5315104A (en) * 1990-05-01 1994-05-24 Bt&D Technologies Photodiode photodetector with adjustable active area
US5376785A (en) * 1992-10-02 1994-12-27 Chin; Philip K. Optical displacement sensor utilizing optical diffusion
US5703357A (en) * 1993-09-27 1997-12-30 Shih; Ishiang Methods for wavelength discrimination of monochromatic light beams
US5999271A (en) * 1998-06-01 1999-12-07 Shih; Ishiang Methods and devices to determine the wavelength of a laser beam
US6573488B1 (en) * 1998-10-13 2003-06-03 Hamamatsu Photonics K.K. Semiconductor position sensitive detector

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1937796A (en) * 1931-01-23 1933-12-05 Int Communications Lab Inc Attenuating and selecting circuts
US2643297A (en) * 1948-12-03 1953-06-23 Fed Telecomm Lab Inc Gas discharge transmission arrangement
US2674154A (en) * 1949-05-21 1954-04-06 Photo Res Corp Photometric device
US2700318A (en) * 1951-10-03 1955-01-25 Snyder James Gun muzzle blast azimuth indicator
US2768310A (en) * 1954-12-28 1956-10-23 Rca Corp Distributed gap electroluminescent device
US2836766A (en) * 1956-05-15 1958-05-27 Gen Electric Electroluminescent devices and circuits
US2856589A (en) * 1954-04-20 1958-10-14 Rca Corp Light-controlled waveguide attenuator

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1937796A (en) * 1931-01-23 1933-12-05 Int Communications Lab Inc Attenuating and selecting circuts
US2643297A (en) * 1948-12-03 1953-06-23 Fed Telecomm Lab Inc Gas discharge transmission arrangement
US2674154A (en) * 1949-05-21 1954-04-06 Photo Res Corp Photometric device
US2700318A (en) * 1951-10-03 1955-01-25 Snyder James Gun muzzle blast azimuth indicator
US2856589A (en) * 1954-04-20 1958-10-14 Rca Corp Light-controlled waveguide attenuator
US2768310A (en) * 1954-12-28 1956-10-23 Rca Corp Distributed gap electroluminescent device
US2836766A (en) * 1956-05-15 1958-05-27 Gen Electric Electroluminescent devices and circuits

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3258601A (en) * 1966-06-28 Photosensitive variable resistance device
US3087069A (en) * 1959-08-12 1963-04-23 Giannini Controls Corp Radiation-controlled variable resistance
US3128386A (en) * 1959-09-22 1964-04-07 Harold K Hughes Radiation sensitive low-torque transducer
US3134907A (en) * 1960-02-08 1964-05-26 Gen Dynamics Corp Character generator
US3194967A (en) * 1960-02-26 1965-07-13 Ass Elect Ind Variable electrical impedances
US3093741A (en) * 1960-09-02 1963-06-11 Meyer John Stirling Photovoltaic device for translating signals
US3121795A (en) * 1961-05-05 1964-02-18 Ncr Co Photovoltaic apparatus for measuring displacement of an element
US3072795A (en) * 1961-05-12 1963-01-08 Altec Lansing Corp Remote volume control
US3202827A (en) * 1961-06-29 1965-08-24 Cummins Chicago Corp Photocell for detecting limited moving shadow areas
US3196278A (en) * 1961-09-12 1965-07-20 Cutler Hammer Inc Area type photo-electric control device
US3171034A (en) * 1961-12-21 1965-02-23 Tomasulo Walter Electro-optical control
US3223846A (en) * 1962-01-02 1965-12-14 Giannini Controls Corp Photosensitive optical fluid stream direction indicator
US3192393A (en) * 1962-01-17 1965-06-29 Gen Precision Inc Optical phase sensitive incremental encoder
DE1238224B (en) * 1962-03-14 1967-04-06 Borg Warner Device for testing the thickness of thread-like material
US3225206A (en) * 1962-03-14 1965-12-21 Borg Warner Photosensitive inspection apparatus for filamentary material
US3146352A (en) * 1962-05-18 1964-08-25 Ncr Co Electro-optical multivibrator using electroluminescent and photoconductive elements
US3222601A (en) * 1962-07-10 1965-12-07 Martin Marietta Corp Antenna beam scanner
US3159750A (en) * 1962-10-01 1964-12-01 Eugene I Kazan Photoelectric pressure transducer
US3193686A (en) * 1963-05-07 1965-07-06 Western Electric Co Photosensitive detectors and methods utilizing photosensitive detectors for positioning articles
US3639769A (en) * 1969-04-10 1972-02-01 William D Clark Photoconductive potentiometer using variable transmittance control strips
US3806895A (en) * 1971-09-16 1974-04-23 Nippon Musical Instruments Mfg Photoconductive memory device
US3868658A (en) * 1971-09-27 1975-02-25 Siemens Ag Device for optical superheterodyne information reading
US3761718A (en) * 1972-09-07 1973-09-25 Honeywell Inc Detector apparatus using semiconductor laminae
US4114035A (en) * 1976-01-30 1978-09-12 Rca Corporation Position encoder employing charge transfer circuit
US4260256A (en) * 1978-11-17 1981-04-07 Eastman Kodak Company Apparatus for measuring illuminance
US5315104A (en) * 1990-05-01 1994-05-24 Bt&D Technologies Photodiode photodetector with adjustable active area
US5376785A (en) * 1992-10-02 1994-12-27 Chin; Philip K. Optical displacement sensor utilizing optical diffusion
US5703357A (en) * 1993-09-27 1997-12-30 Shih; Ishiang Methods for wavelength discrimination of monochromatic light beams
US5999271A (en) * 1998-06-01 1999-12-07 Shih; Ishiang Methods and devices to determine the wavelength of a laser beam
US6573488B1 (en) * 1998-10-13 2003-06-03 Hamamatsu Photonics K.K. Semiconductor position sensitive detector

Similar Documents

Publication Publication Date Title
US2896086A (en) Attenuator network
JP2532212B2 (en) Variable attenuator
US3296546A (en) Transistor circuit constructions for active type band pass filters
US3528040A (en) Electronically variable filter
GB1522100A (en) Bidirectional filter circuit
US3289120A (en) Variable electric attenuator networks
GB1203104A (en) Improvements in the trimming to value of thin film circuit components
US3241079A (en) Extended-range square-law detector
GB466092A (en) Improvements in variable attenuators of electric alternating signals
US3152258A (en) Electro-optical switching device
US3453529A (en) Attenuators having constant output resistance
US3568073A (en) Logarithmic attenuator
US3423579A (en) Electronic divider and multiplier using photocells
US3102242A (en) Oscillator with electroluminescent and photoconductive elements
US2884541A (en) Electroluminescent image device
DE1414963B2 (en) OPTOELECTRONIC CIRCUIT AND SOLID IMAGE AMPLIFIER CONSTRUCTED FROM IT
US2137633A (en) Low frequency tone control system
US3473141A (en) Active rc-filter of a wanted degree
JPS58200623A (en) Variable attenuator circuit
US3176237A (en) Telecommunication receivers
US3146352A (en) Electro-optical multivibrator using electroluminescent and photoconductive elements
US3043961A (en) Electroluminescent device and circuits therefor
US3596198A (en) Volume controller
JP3234777B2 (en) Variable attenuator for microwave
US2785316A (en) Electro-optical system