US2877393A - Semi-conductor device - Google Patents
Semi-conductor device Download PDFInfo
- Publication number
- US2877393A US2877393A US474257A US47425754A US2877393A US 2877393 A US2877393 A US 2877393A US 474257 A US474257 A US 474257A US 47425754 A US47425754 A US 47425754A US 2877393 A US2877393 A US 2877393A
- Authority
- US
- United States
- Prior art keywords
- semi
- envelope
- glass
- conductive body
- conductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title description 7
- 239000011521 glass Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical group [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/42—Mounting, supporting, spacing, or insulating of electrodes or of electrode assemblies
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/04—Joining glass to metal by means of an interlayer
- C03C27/042—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts
- C03C27/046—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts of metals, metal oxides or metal salts only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2893/00—Discharge tubes and lamps
- H01J2893/0001—Electrodes and electrode systems suitable for discharge tubes or lamps
- H01J2893/0002—Construction arrangements of electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Definitions
- the invention relates to a semi-conductor device, and in particular to an electrode system comprising a semiconductive body arranged in an envelope consisting at least in part of glass, a plurality of leads being sealed into this glass part.
- a semiconductive body arranged in an envelope consisting at least in part of glass, a plurality of leads being sealed into this glass part.
- Such a device may be a crystal diode or a transistor.
- the glass part may, for example, be a glass cover arranged on another part of the envelope which may likewise consist of glass but may alternatively be made of metal.
- the leads consist of metal wire from which the coating has been removed internally of the envelope and the core of which extends continuously.
- coating is to be understood to mean the surface part of the wire.
- This part may consist of a metal difierent from that of the core, for example of copper.
- the use of such wire for manufacturing through-glass lead-ins is well-known.
- at least the core consists of a metal of low thermal conductivity, for example of a nickel-iron alloy.
- the entire wire may consist of this alloy.
- Such an alloy has the advantage that the heat required for sealing the cover to the other part of the envelope is only transmitted to the semi-conductive body to a slight extent.
- the coating portion or the coating can be removed in a simple manner by etching.
- glass as used herein is to be understood also to mean ceramic material.
- the transistor comprises a semi-conductive body 1 consisting, for example, of germanium and having two electrodes 2 and 3 fused to it.
- a semi-conductive body 1 consisting, for example, of germanium and having two electrodes 2 and 3 fused to it.
- thin conductive supply leads 4 are secured by soldering which at their upper ends terminate in thicker leads 5 which are sealed in a glass cover 6.
- This cover is arranged in a flanged rim 7 of a metal can 8 closed at the bottom and is sealed to this rim by means of glaze.
- the bottom part of the can contains a filler 9 enclosing the semi-conductive body and acting to improve the heat dissipation.
- a filler use may be made of the so-called silicone grease.
- the assembly consisting of the leads 4 and 5 and the cover 6 is made as follows. Three wires comprising a core which consists of an alloy containing 42% of nickel and 58% of iron and is 0.3 mm. in diameter and a copper coating 0.05 mm. in diameter are sealed into a glass disc 6 moulded into the shape shown. Subsequently the lower ends of the wires are dipped in an etching bath dissolving the copper, for example in dilute nitric acid.
- the leads 4 and 5 from homogeneous material, for example entirely from a nickel-iron alloy, and to arrange the lower ends to be thinner, which again can be elfected in a simple manner by etching.
- use may also be made of wire the coating and the core of which consist of difierent metals, not only the coating but also part of the core being re moved at the inner end.
- a semi-conductor device comprising an envelope including a portion of glass, a semi-conductive body within said envelope, and a plurality of conductive members heat sealed through and within said glass portion of the envelope and coupled to said semi-conductive body, said conductive members each comprising a single metal wire having a first outer portion of larger diameter sealed in the glass portion and extending externally of the envelope but spaced from the semi-conductive body and a second continuous core portion of smaller diameter within the envelope extending to the semi-conductive body and extending continuously within the first outer portion externally of the envelope, thereby to reduce the transfer of heat from the envelope to the semi-conductive body.
- a semi-conductor device comprising an envelope including a portion of glass, a semi-conductive body within said envelope, and a plurality of conductive members heat-sealed through and within said glass portion of the envelope and coupled to said semi-conductive body, said conductive members each comprising a single metal wire having a first outer portion of larger diameter sealed in the glass portion and extending externally of the envelope but spaced from the semi-conductive body and a single continuous core portion of smaller diameter within the envelope extending to the semi-conductive body and extending continuously within the first outer portion externally of the envelope, thereby to reduce the transfer of heat from the envelope to the semi-conductive body, said continuous core being constituted of a nickel-iron alloy, and said first portion including a copper coating on the nickel-iron core.
Description
March 10, 1959 w. A. RVOOVERS 2,877,393
SEMI-CONDUCTOR DEVICE Filed Dec. 9, 1954 INVENTOR WILHELMUS ANTONIUS ROOVERS United States Patent SEMI-CONDUCTOR DEVICE Wilhelmus Antonius Roovers, Eindhoven, Netherlands, assignor, by mesne assignments, to North American Philips Company, Inc., New York, N. Y., a corporation of Delaware Application December 9, 1954, Serial No. 474,257
Claims priority, application Netherlands December 22, 1953 3 Claims. (Cl. 317-234) The invention relates to a semi-conductor device, and in particular to an electrode system comprising a semiconductive body arranged in an envelope consisting at least in part of glass, a plurality of leads being sealed into this glass part. Such a device may be a crystal diode or a transistor. The glass part may, for example, be a glass cover arranged on another part of the envelope which may likewise consist of glass but may alternatively be made of metal.
It is well known to arrange such leads to be comparatively rigid and to weld thinner leads to their ends required to be arranged internally of the envelope in a manner similar to that used in many electric discharge tubes. However, this construction requires a comparatively large amount of space. It is desirable for these leads internally of the envelope to be thin in order to transmit a minimum amount of heat to the semi-conductive body in the process of arranging the cover onto the other part of the envelope, which is usually effected by heat-sealing, and also in order to arrange these leads to be very flexible in order to prevent an excessive mechanical load from being imposed on the soldering joints to the semi-conductive body.
It is an object of the invention to provide a construction which occupies very little space and can be manufactured in a simple manner.
According to the invention the leads consist of metal wire from which the coating has been removed internally of the envelope and the core of which extends continuously.
The term coating as used herein is to be understood to mean the surface part of the wire. This part may consist of a metal difierent from that of the core, for example of copper. The use of such wire for manufacturing through-glass lead-ins is well-known. Preferably at least the core consists of a metal of low thermal conductivity, for example of a nickel-iron alloy.
If required, the entire wire may consist of this alloy. Such an alloy has the advantage that the heat required for sealing the cover to the other part of the envelope is only transmitted to the semi-conductive body to a slight extent.
The coating portion or the coating can be removed in a simple manner by etching.
It should be noted that the term glass as used herein is to be understood also to mean ceramic material.
The invention will now be explained with reference to the accompanying drawing, in which an embodiment thereof is shown by way of example, and the single figure of which is a cross-sectional view of a transistor on an enlarged scale.
The transistor comprises a semi-conductive body 1 consisting, for example, of germanium and having two electrodes 2 and 3 fused to it. To these parts thin conductive supply leads 4 are secured by soldering which at their upper ends terminate in thicker leads 5 which are sealed in a glass cover 6. This cover is arranged in a flanged rim 7 of a metal can 8 closed at the bottom and is sealed to this rim by means of glaze. The bottom part of the can contains a filler 9 enclosing the semi-conductive body and acting to improve the heat dissipation. As a filler use may be made of the so-called silicone grease.
The assembly consisting of the leads 4 and 5 and the cover 6 is made as follows. Three wires comprising a core which consists of an alloy containing 42% of nickel and 58% of iron and is 0.3 mm. in diameter and a copper coating 0.05 mm. in diameter are sealed into a glass disc 6 moulded into the shape shown. Subsequently the lower ends of the wires are dipped in an etching bath dissolving the copper, for example in dilute nitric acid.
The fact that the welds hitherto used in such constructions to join two different kinds of wire are eliminated enables the length to be shorter and the wires to be sealed into the glass in closer proximity to each other. In addition, the likelihood of stresses in the glass is reduced, While finally the likelihood of poor welding joints is entirely eliminated.
It is also possible to manufacture the leads 4 and 5 from homogeneous material, for example entirely from a nickel-iron alloy, and to arrange the lower ends to be thinner, which again can be elfected in a simple manner by etching. Finally, use may also be made of wire the coating and the core of which consist of difierent metals, not only the coating but also part of the core being re moved at the inner end.
In all these cases the advantage is obtained that the heat produced when sealing the cover to the can is transmitted to the semi-conductive body to a slight extent only.
What is claimed is:
1. A semi-conductor device comprising an envelope including a portion of glass, a semi-conductive body within said envelope, and a plurality of conductive members heat sealed through and within said glass portion of the envelope and coupled to said semi-conductive body, said conductive members each comprising a single metal wire having a first outer portion of larger diameter sealed in the glass portion and extending externally of the envelope but spaced from the semi-conductive body and a second continuous core portion of smaller diameter within the envelope extending to the semi-conductive body and extending continuously within the first outer portion externally of the envelope, thereby to reduce the transfer of heat from the envelope to the semi-conductive body.
2. A semi-conductor device as set forth in claim 1 wherein at least the second portion of the metal wire consists of a nickel-iron alloy.
3. A semi-conductor device comprising an envelope including a portion of glass, a semi-conductive body within said envelope, and a plurality of conductive members heat-sealed through and within said glass portion of the envelope and coupled to said semi-conductive body, said conductive members each comprising a single metal wire having a first outer portion of larger diameter sealed in the glass portion and extending externally of the envelope but spaced from the semi-conductive body and a single continuous core portion of smaller diameter within the envelope extending to the semi-conductive body and extending continuously within the first outer portion externally of the envelope, thereby to reduce the transfer of heat from the envelope to the semi-conductive body, said continuous core being constituted of a nickel-iron alloy, and said first portion including a copper coating on the nickel-iron core.
References Cited in the file of this patent UNITED STATES PATENTS
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL789675X | 1953-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2877393A true US2877393A (en) | 1959-03-10 |
Family
ID=19832378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US474257A Expired - Lifetime US2877393A (en) | 1953-12-22 | 1954-12-09 | Semi-conductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US2877393A (en) |
| DE (1) | DE976643C (en) |
| FR (1) | FR1116097A (en) |
| GB (1) | GB789675A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL27132C (en) * | 1961-11-13 | |||
| DE1208818B (en) * | 1962-11-30 | 1966-01-13 | Telefunken Patent | Electrolytic capacitor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2790941A (en) * | 1952-03-27 | 1957-04-30 | Sylvania Electric Prod | Terminal lead construction and method, and semiconductor unit |
| US2827598A (en) * | 1953-03-19 | 1958-03-18 | Raytheon Mfg Co | Method of encasing a transistor and structure thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE278655C (en) * | ||||
| DE856918C (en) * | 1952-10-02 | N. V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Electric discharge tube | |
| DE295472C (en) * | ||||
| NL16155C (en) * | 1924-10-07 | |||
| GB251706A (en) * | 1925-02-11 | 1926-05-11 | Percie Vaughan Castell Evans | A method of mounting crystals for wireless rectification |
| NL61585C (en) * | 1943-08-13 | 1947-11-15 | ||
| GB616065A (en) * | 1946-08-23 | 1949-01-17 | Gen Electric Co Ltd | Improvements in and relating to crystal contact devices |
| DE931907C (en) * | 1952-07-24 | 1955-08-18 | Telefunken Gmbh | Process for the production of a crystallode |
-
1954
- 1954-12-09 US US474257A patent/US2877393A/en not_active Expired - Lifetime
- 1954-12-19 DE DEN9932A patent/DE976643C/en not_active Expired
- 1954-12-20 FR FR1116097D patent/FR1116097A/en not_active Expired
- 1954-12-22 GB GB37112/54A patent/GB789675A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2790941A (en) * | 1952-03-27 | 1957-04-30 | Sylvania Electric Prod | Terminal lead construction and method, and semiconductor unit |
| US2827598A (en) * | 1953-03-19 | 1958-03-18 | Raytheon Mfg Co | Method of encasing a transistor and structure thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB789675A (en) | 1958-01-29 |
| DE976643C (en) | 1964-01-16 |
| FR1116097A (en) | 1956-05-03 |
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