US20240178092A1

US20240178092A1 - Sic-based electronic device with multilayer and multifunctional passivation, and method of manufacturing the electronic device

Info

Publication number: US20240178092A1
Application number: US18/505,569
Authority: US
Inventors: Gabriele BELLOCCHI; Simone RASCUNA'; Valeria Puglisi
Original assignee: STMicroelectronics International NV
Current assignee: STMicroelectronics International NV
Priority date: 2022-11-25
Filing date: 2023-11-09
Publication date: 2024-05-30
Also published as: IT202200024396A1; EP4451323A2; EP4386829A2; EP4451323A3; EP4521456A3; EP4521456A2; EP4386829A3

Abstract

Electronic device, comprising: a solid body including a Silicon Carbide substrate, and further including an electrical terminal of the electronic device on the substrate; a passivation layer on the electrical terminal, of a first material; and a first adhesion improving layer coupled to the passivation layer and to the solid body, of a second material having predefined characteristics of adhesion to the first material, and configured to bond together the passivation layer and the solid body.

Description

BACKGROUND

Technical Field

The present disclosure relates to an electronic device and to a method of manufacturing the electronic device, in particular wherein a passivation layer of the electronic device is provided with one or more adhesion improving layers.

Description of the Related Art

Silicon Carbide (SiC) is gaining considerable interest in the semiconductor industry, in particular for the manufacture of electronic components such as diodes or transistors, especially for power applications.
Electronic devices formed in a silicon carbide substrate, in its different polytypes (for example, 3C—SiC, 4H—SiC, 6H—SiC), have numerous advantages such as low output resistance in conduction, low leakage current, resistance at high operating temperatures and high operating frequencies.
However, the development and the manufacture of SiC-based electronic devices are limited by factors such as the electrical and mechanical properties of passivation layers (comprised in such electronic devices and, for example, extending on SiC semiconductor bodies of electronic devices). In particular, it is known to form the passivation layers using polymeric materials (e.g., polyimide) which allow to withstand high operating temperatures of the electronic devices and have high dielectric strength, for example higher than 400 kV/mm. In detail, the high dielectric strength of polymeric materials ensures that the passivation layers withstand high electric fields, and therefore high potential differences thereacross, without breaking or perforating (“electrical breakdown”), and therefore without becoming electrically conductive.
However, polymeric materials have high coefficients of thermal expansion (CTE) (e.g., CTE=43e⁻⁶1/K for Polybenzobisoxazole material, or “PIX”), and it causes adhesion problems of the passivation layer to SiC, which has a lower coefficient of thermal expansion (CTE=3.8e−6 1/K).
In particular, such adhesion problems between the passivation layer and the SiC may arise during thermal cycling tests (performed for example between about −50° C. and about +150° C.) or during use of the electronic device, when the latter is subject to high thermal excursions (e.g., it is subject to operating temperature differences equal to, or greater than, about 200° C.). Due to the high difference in CTE between the passivation layer and the SiC, such high thermal excursions generate mechanical stresses at an interface between the passivation layer and the SiC, which may lead to a(n) (at least partial) delamination of the passivation layer with respect to the SiC semiconductor body.
If this delamination were sufficiently extended (e.g., it were such that no portion of the passivation layer is interposed between two metallizations of the electronic device set at different potentials, which are therefore separated from each other only by air), electric discharges may generate at said interface, leading to the damage of the same electronic device. In particular, the risk of damaging the electronic device increases when the latter is used in reverse bias conditions, due to the high voltage difference (e.g., greater than 1000 V) to withstand.
Known solutions to this problem comprise the use of a plurality of dielectric layers of materials different from each other (e.g., Silicon Nitride, Silicon oxide and polyamide in succession to each other) to form a passivation multi-layer for limiting the mechanical stresses at the interface with the SiC semiconductor body.

BRIEF SUMMARY

According to the present disclosure, an electronic device and a method of manufacturing the electronic device are provided. An electronic device comprises a passivation layer on the electrical terminal of a first material. It also comprises a first adhesion improving layer coupled to the passivation layer and to the solid body, of a second material having selected characteristics of adhesion to the first material, and configured to bond together the passivation layer and the solid body.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

For a better understanding of the present disclosure, a preferred embodiment is now described, purely by way of non-limiting example, with reference to the attached drawings, wherein:

FIG. 1 illustrates, in a cross-sectional view, an electronic device of known type; and

FIG. 2 illustrates, in a cross-sectional view, an electronic device in accordance with an embodiment of the present disclosure;

FIG. 3 illustrates, in a cross-sectional view, an electronic device in accordance with another embodiment of the present disclosure;

FIG. 4 illustrates in a cross-sectional view, an electronic device in accordance with another embodiment of the present disclosure;

FIG. 5 illustrates in a cross-sectional view, an electronic device in accordance with another embodiment of the present disclosure;

FIG. 6 illustrates in a cross-sectional view, an electronic device in accordance with another embodiment of the present disclosure;

FIG. 7 illustrates in a cross-sectional view, an electronic device in accordance with another embodiment of the present disclosure;

FIG. 8 illustrates, in cross-sectional view, respective electronic devices according to respective embodiments of the present disclosure.

DETAILED DESCRIPTION

FIG. 1 shows, in lateral sectional view in a Cartesian (triaxial) reference system of axes X, Y, Z, a portion of an electronic device (here exemplarily a JBS, “Junction Barrier Schottky,” diode) 1 of a known type.
The JBS device 1 comprises a semiconductor body 3, of N-type SiC, provided with a surface 3 a opposite to a surface 3 b. The semiconductor body includes, for example, a substrate and one or more regions epitaxially grown on the substrate, of the N-type and having respective doping concentration values. The JBS device 1 also comprises multiple junction-barrier (JB) elements 9 in the semiconductor body 3, facing the top surface 3 a and each including a respective region implanted in the semiconductor body 3, of the P-type, and an ohmic contact on the implanted region, at the level of the top surface 3 a of the semiconductor body 3. The JBS device 1 further comprises a first metallization 8, which extends on the top surface 3 a, in electrical contact with the junction-barrier elements 9 through the respective ohmic contacts. The JBS device 1 further comprises an edge termination region 10 (or guard ring), in particular a P-type implanted region, which completely surrounds the JB elements 9.
Schottky diodes 12 are formed at the interface between the anode metallization 8 and the semiconductor body 3, where semiconductor-metal Schottky junctions are formed. The region of the MPS device 1 which includes the JB elements 9 and the Schottky diodes 12 (i.e., the region contained within the guard ring 10) is an active area 4 of the JBS device 1.
The JBS device 1 further comprises a second metallization 6, which extends on the bottom surface 3 b. The first and the second metallizations 8, 6 form, respectively, anode and cathode electrical terminals, biasable during use of the JBS device 1.
An electrically passive region 16 extends outside the edge termination region 10.
An insulating layer 18, of insulating or dielectric material, in particular Silicon Oxide (SiO₂), extends partially above the edge termination region 10.
The first metallization 8 is in electrical contact with a portion of the edge termination region 10 where the latter is not covered by the insulating layer 18, and also extends partially above the insulating layer 18. An interface layer 20, here of Silicon Nitride (SiN), extends above the first metallization 8 and the insulating layer 18. Furthermore, the JBS device 1 comprises a passivation layer 22, in particular of polyimide, which extends above the interface layer 20. In other words, the interface layer 20 acts as an interface between the passivation layer 22 and the underlying layers, here the first metallization 8 and the insulating layer 18. The interface layer 20 may be omitted; however, the Applicant has verified that the interface layer 20 improves the adhesion of the passivation layer 22 with the underlying layers.
A protection layer 24, of a resin such as for example Bakelite, extends above the passivation layer 22, to protect the JBS device 1 when inserted in a package (not shown).
However, although the interface layer 20 improves, as said, the adhesion of the passivation layer 22 with the underlying layers, some critical conditions of use or of thermal or thermo-mechanical test of the JBS device 1 may cause a delamination or partial detachment of the passivation layer 22 from the interface layer 20 (due to the stress generated by the tests). This occurs in particular under conditions of stress caused by high use temperatures (e.g., above 150° C.) and/or high thermal excursion (e.g., higher than 200° C.). This effect, in addition to making the JBS 1 device structurally fragile, may be a contributing factor in the occurrence of undesired electric discharges which affect the electrical operation of the JBS 1 device. In fact, the Applicant has verified that in some conditions of thermo-mechanical or mechanical stress process following the assembling process, the interface layer 20 has one or more local cracks throughout the entire thickness which, at the first metal layer 8, cause the generation of such electric discharges. These problems are all the more evident when the electronic device 1 is subject to high thermal excursions and high voltage differences under reverse bias conditions.
The benefit to overcoming the aforementioned problems is therefore felt.
FIG. 2 shows, in lateral-sectional view in the same Cartesian (triaxial) reference system of axes X, Y, Z, of FIG. 1 , an electronic device 50 according to an aspect of the present disclosure. In particular, the device 50 is a JBS diode, in analogy to what has been described with reference to FIG. 1 ; however, the present disclosure is not limited to this device and also finds application to other types of electronic devices, in particular power devices, such as for example MOSFET, IGBT, MPS, Schottky diode, PN diode, PiN diode, etc.
The electronic device 50 comprises the elements described hereinbelow, illustrated with reference to FIG. 2 .
A semiconductor body 53 (e.g., including a substrate 53′ and, optionally, one or more epitaxial layers 53″ grown thereon), of N-type or P-type SiC (hereinafter non-limiting reference will be made to the sole N-type), is provided with a front surface 53 a opposite to a rear surface 53 b along the direction of the Z axis. The semiconductor body 53 includes, in the example illustrated in FIG. 2 , the substrate 53′ having the epitaxial layer 53″ grown thereon acting as a drift layer of the electronic device 50, both of N-type SiC (in particular 4H—SiC, however other polytypes may be used such as, but not limited to, 2H—SiC, 3C—SiC and 6H—SiC). For example, the substrate 53′ has an N-type dopant concentration comprised between 1-10¹⁹at/cm³and 1-10²²at/cm³and has a thickness, measured along the Z axis between the surfaces 53 a and 53 b, comprised between 300 μm and 450 μm, and in particular equal to about 360 μm. The drift layer 53″ has a respective dopant concentration lower than the dopant concentration of the substrate and a thickness comprised, for example, between 5 and 15 μm.
An ohmic contact layer 56 (for example of Nickel Silicide) extends on the rear surface 53 b, and a metallization 57, in this example a cathode metallization, for example of Ti/NiV/Ag or Ti/NiV/Au, extends on the ohmic contact region 56.
One or more P-type doped regions 59′ extend in the semiconductor body 53 (in particular in the drift layer), facing the top surface 53 a; each doped region 59′ houses a respective ohmic contact (not shown and of known type) such that each doped region 59′ forms a respective Junction-Barrier (JB) element 59. An edge termination region, or guard ring, 60, in particular a further P-type doped region, extends in the drift layer, faces the top surface 53 a and completely surrounds (in plan view, on an XY plane defined by the axes X and Y) the JB elements 59. The edge termination region 60 may be omitted.
An insulating layer 61 (of insulating or dielectric material, e.g. Silicon Oxide, TEOS) extends on the top surface 53 a in such a way as to completely surround (in view on the XY plane) the JB elements 59 and to be partially superimposed on the guard ring 60 (when present).
A metallization 58, in this example an anode metallization, for example of Ti/AlSiCu or Ni/AlSiCu, extends on a portion of the top surface 53 a delimited externally by the insulating layer 61 (i.e., at the JB elements 59/active area 54) and, partially, on the insulating layer 61.
A passivation layer 69 of polymeric material such as polyimide (e.g., PIX) extends on the anode metallization 58 and on the insulating layer 61.
The passivation layer 69 may alternatively be of a material from among: HfO₂, ZrO₂, TiO₂, Ta₂O₅, TiN, ZnO, AZO, GZO.
The passivation layer 69 is delimited by a top side 69 a, a bottom side 69 b, opposite to the top side 69 a along the direction of the Z axis, and by lateral portions 69 c which connect the top side 69 a to the bottom side 69 b.
One or more Schottky diodes 62 are formed at the interface between the semiconductor body 53 and the anode metallization 58, laterally to the doped regions 59′. In particular, Schottky junctions (semiconductor-metal) are formed by portions of the semiconductor layer 53 in direct electrical contact with respective portions of the anode metallization 58.
Furthermore, each ohmic contact extending in the respective doped region 59′ provides an electrical connection having an electrical resistivity value lower than the electrical resistivity value of the doped region 59′ housing it. The JB elements 59 are therefore P-i-N diodes.
The region of the electronic device 50 which includes the JB elements 59 and the Schottky diodes 62 (i.e., the region delimited by the guard ring 60) is an active area 54 of the electronic device 50.
Outside the active area 54, i.e. beyond the edge termination region 60, a lateral surface 53 c of the semiconductor body 53 is present, for example extending substantially orthogonally to the top surface 53 a. The lateral surface 53 c is formed following a dicing, or singulation, step of a SiC wafer wherein a plurality of electronic devices 50 are provided. The dicing step has the function of separating an electronic device 50 from another device 50 of the same wafer. The dicing occurs at a scribe line (not shown) of the SiC wafer wherefrom the electronic device 50 is obtained; this scribe line surrounds at a distance, on the XY plane, the active region 54, the guard ring 60 and the insulating layer 61.
A protection layer 74, of a resin such as for example Bakelite, extends above the passivation layer 69, to protect the electronic device 50 when inserted in a package (not shown).
According to one aspect of the present disclosure, the passivation layer 69 is at least in part covered by an encapsulation structure 82 which extends below the passivation layer 69 and above the passivation layer 69. The encapsulation structure has the function of improving the adhesion of the passivation layer 69 to the rest of the electronic device 50 and therefore hereinafter it, and the layers forming it, will also be referred to as “adhesion improving structure,” or “adhesion improving layers,” respectively.
The encapsulation structure 82 comprises, in particular, a first portion 82 a (first encapsulation layer or first adhesion improving layer) extending above the anode metallization 58 and the insulating layer 61 (in particular, in direct contact with the anode metallization 58 and the insulating layer 61), and below the passivation layer 69 (in particular, in direct contact with the passivation layer 69). In other words, the first encapsulation layer 82 a acts as an interface between the passivation layer 69 and the underlying layers, herein the metallization 58 and the insulating layer 61.
In one embodiment (FIG. 2 ) the first encapsulation layer 82 a extends throughout the entire extension of the bottom side 69 b of the passivation layer 69; in particular, the first encapsulation layer 82 a has a greater extension than the corresponding extension of the bottom side 69 b of the passivation layer 69 (i.e., the first encapsulation layer 82 a extends beyond the lateral portions 69 c).
The encapsulation structure 82 further comprises a second portion 82 b (second encapsulation layer or second adhesion improving layer) extending on the top side 69 a of the passivation layer 69 and on the lateral portions 69 c, up to reaching and contacting the first encapsulation layer 82 a wherein the first encapsulation layer protrudes beyond the lateral portions 69 c. In this manner, contact regions 70 between the first and the second encapsulation layers 82 a, 82 b provide a physical coupling element between the first and the second encapsulation layers 82 a, 82 b, configured to bond the second encapsulation layer 82 b to the first encapsulation layer 82 a, thus obviating a possible detachment of the passivation layer 69.
The first and the second encapsulation layers 82 a, 82 b do not extend at the regions dedicated to housing the scribe line.
In a further embodiment, illustrated in FIG. 3 (elements common to those of FIG. 2 are identified with the same reference numerals and are not further described), the first encapsulation layer 82 a extends throughout the entire extension of the bottom side 69 b of the passivation layer 69 and, in particular, has an extension equal to the corresponding extension of the bottom side 69 b of the passivation layer 69 (i.e., the first encapsulation layer 82 a does not extend beyond the lateral portions 69 c). The second encapsulation layer 82 b extends, as well as on the passivation layer 69, also on the top surface 53 a of the semiconductor body 53 on the right side of the representation of FIG. 3 , and on the metallization 58 on the left side of the representation of FIG. 3 , forming respective coupling regions 72. The coupling regions 72 comprise a respective contact portion 72 a between the second encapsulation layer 82 b and the underlying layers (top surface of the substrate 53 c/metallization 58), and a respective lateral contact portion 72 b between the second encapsulation layer 82 b and the first encapsulation layer 82 a. In this manner, the passivation layer 69 is encapsulated, thus obviating a possible detachment of the passivation layer 69.
The aspects discussed hereinbelow apply to all embodiments of the present disclosure, in particular to those of FIGS. 2 and 3 described above and to those of FIGS. 4-6 described below.
According to one aspect of the present disclosure, the encapsulation structure 82 extends around the passivation layer 69 without interruptions (seamlessly) and without interfaces; in this case, both the first and the second encapsulation layers 82 a, 82 b are of a same material. In this embodiment, at the end of the manufacturing steps, the first and the second encapsulation layers 82 a, 82 b form a single body.
In a further aspect of the present disclosure, the first and the second encapsulation layers 82 a, 82 b are of respective materials different from each other.
In general, the materials of the first and the second encapsulation layers 82 a, 82 b are configured to have predetermined characteristics of adhesion to the material of the passivation layer 69 and to the underlying layers (here, the layers 58 and 61), in order to prevent delaminations and/or detachments of the passivation layer 69. The first and the second encapsulation layers 82 a, 82 b also act as protection for the passivation layer 69 to prevent cracks of the same.
Materials for the aforementioned purposes include aluminum oxide (or alumina) Al₂O₃and hafnium oxide Hf₂O₃, in particular in case the passivation layer 69 is of a material from among polyimide, HfO₂, ZrO₂, TiO₂, Ta₂O₅, TiN, ZnO, AZO, GZO.
The Applicant has verified that a deposition by ALD (Atomic Layer Deposition) technique is effective in forming encapsulation layers 82 a, 82 b with characteristics of adhesion and protection suitable for the purposes of the present disclosure. The encapsulation layers 82 a, 82 b have, for example, a thickness comprised between 8 nm and 100 nm, in particular between 10 nm and 50 nm.
In one aspect of the present disclosure, the first and the second encapsulation layers 82 a, 82 b are both of Al₂O₃.
In a further aspect of the present disclosure, the first and the second encapsulation layers 82 a, 82 b are both of Hf₂O₃.
In a further aspect of the present disclosure, the first encapsulation layer 82 a is of Al₂O₃and the second encapsulation layer 82 b is of Hf₂O₃.
In a further aspect of the present disclosure, the first encapsulation layer 82 a is of Hf₂O₃and the second encapsulation layer 82 b is of Al₂O₃.
It is evident that other materials having characteristics of adhesion to the passivation layer 69 may be chosen according to the material used for the passivation layer 69.
In addition to the aforementioned characteristics of adhesion, the Applicant has verified that Hf₂O₃and Al₂O₃possess humidity barrier properties.
FIG. 4 illustrates a further embodiment. Elements common to FIGS. 2 and 3 are illustrated with the same reference numerals and are not further described. It should be noted that, although FIG. 4 illustrates coupling regions 72 of the type illustrated in FIG. 3 , the embodiment of FIG. 4 is not limited to this aspect. In fact, coupling regions of the type illustrated in FIG. 2 with the reference numeral 70 may equally apply to the embodiment of FIG. 4 .
In the embodiment illustrated in FIG. 4 , one or more anchor elements 84 are formed between the second encapsulation layer 82 b and the passivation layer 69. Referring to FIG. 4 , each anchor element 84 extends through an opening or indentation 86 formed through the passivation layer 69. The opening 86 has a shape freely chosen during the design step, for example a circular, oval, generically polygonal, or irregular shape.
Each anchor element 84 follows the shape of the opening 86 and is for further improving the bonding (adhesion) of the second encapsulation layer 82 b to the passivation layer 69. The cavity 86 which houses the respective anchor element 84 therefore has a complementary shape with respect to the shape of the anchor element 84. In other words, each anchor element 84 completely fills the cavity housing it.
Each anchor element 84 is of the same material as the second encapsulation layer 82 b and therefore forms a single body, or monolithic structure, with the second encapsulation layer 82 b. Each anchor element 84 is formed simultaneously with the second encapsulation layer 82 b, for example during the step of forming (depositing) the material of the second encapsulation layer 82 b.
The openings 86 may be replaced by a general roughness or granularity of the top surface of the passivation layer 69.
As previously said, the Applicant has verified that characteristics of adhesion for the purpose of the present disclosure may be obtained, in one embodiment, by ALD deposition of the second encapsulation layer 82 b; however, in the case of FIG. 4 , other types of deposition may be used, for example CVD deposition, since the presence of the anchor elements 84 is per se sufficient to obtain the aforementioned characteristics of adhesion.
FIG. 5 (elements common to FIGS. 2-4 have the same reference numerals and are not further described) illustrates a further embodiment, wherein a physical anchor 88 is formed between the passivation layer 69 and the semiconductor body 53. The anchor 88 of FIG. 5 may apply to any of the previously described embodiments. The anchor element 88 protrudes from the passivation layer 69 (in particular, along the direction of the Z axis) and extends, through the first encapsulation layer 82 a, inside the insulating layer 61, up to reaching the top surface 53 a of the semiconductor body 53. The anchor element 88 anchors and bonds the passivation layer 69 to the insulating layer 61. The anchor element 88 is integral with the passivation layer 69 and, in particular, is an extension of the same passivation layer 69. The anchor element 88 therefore extends from the passivation layer 69 without interruptions (seamlessly) and without interfaces and is of the same material as the passivation layer 69. In other words, the anchor element 88 and the passivation layer 69 form a single, or monolithic, body. The anchor element 82 extends in, and fills, a through hole formed through the encapsulation layer 82 a. This through hole has a shape freely chosen during the design step, for example a circular, oval or polygonal shape, with a diameter along the X axis equal to a few micrometers, for example between 2 and 5 μm. The anchor element 88 is formed outside the active area 54, and in particular outside the edge termination region 60; in other words, the anchor element 88 is interposed between the edge termination region 60 and the lateral surface 53 c. In the event that the edge termination region 60 is not present, the anchor element 88 is formed outside the active area 54, i.e. between the active area 54 and the lateral surface 53 c in an electrically passive region of the device. The anchor element 88 is patterned in such a way as to bond the passivation layer 69 to the insulating layer 61 and is for further improving the adhesion of the passivation layer 69, preventing and/or avoiding the delamination and/or the detachment of the passivation layer 69. In particular, the anchor element 88 is housed and fit into a housing or cavity extending in the insulating layer 61, in such a way as to couple and make the passivation layer 69 and the insulating layer 61 integral with each other. The cavity which houses the anchor element 88 has a complementary shape with respect to the shape of the anchor element 88. In other words, the anchor element 88 completely fills the cavity housing it.
FIG. 6 (elements common to FIGS. 2-5 have the same reference numerals and are not further described) illustrates a further embodiment, wherein one or more anchor elements 92 extend in respective one or more trenches 94 which traverse the passivation layer 69 throughout the entire thickness along the Z axis. In this embodiment, the anchor elements 92 connect the first encapsulation layer 82 a to the second encapsulation layer 82 b.
In this embodiment, the trenches 94 are formed by steps of etching the passivation layer 69 and then the anchor elements 92 are formed by filling these trenches 94 during the step of forming the second encapsulation layer 82 b and with the same material used to form the second encapsulation layer 82 b. If allowed by the extension along the Z axis of the trenches 94, the anchor elements 92 and the second encapsulation layer 82 b are formed simultaneously by ALD deposition; alternatively, a CVD deposition may be used to fill the trenches 94, forming the anchor elements 92, and to form simultaneously the second encapsulation layer 82 b.
According to a non-limiting aspect of this embodiment, since the thickness of the passivation layer 69 might not be (typically, is not) uniform along the entire extension of the same, such trenches 94 and relative anchor elements 92 may be formed at the thinner portions (along the Z axis) of the passivation layer 69.
Anchor elements of the type illustrated in FIG. 6 may also be implemented in any of the embodiments previously described, in a per se evident manner.
The anchor elements 92 between the first and the second encapsulation layers 82 a, 82 b provide respective physical coupling elements between the first and the second encapsulation layers 82 a, 82 b, configured to bond the second encapsulation layer 82 b to the first encapsulation layer 82 a, encapsulating the passivation layer 69 and thus obviating a possible detachment of the passivation layer 69.
The embodiment of FIG. 7 is based on FIG. 6 (elements common with FIG. 6 have the same reference numerals and are not further described). In the embodiment of FIG. 7 , the connection regions 70 or 72 of FIGS. 2 or 3 are omitted. In other words, the second encapsulation layer does not extend on the lateral walls 69 c of the passivation layer 69, or it extends only in part on the lateral walls 69 c.
FIG. 7 shows a further embodiment of an electronic device 100, according to a further aspect of the present disclosure.
FIG. 7 shows, in lateral sectional view in the same Cartesian (triaxial) reference system of axes X, Y, Z, of FIGS. 1-6 , the electronic device 100. In particular, the device 100 is a JBS diode, in analogy to what has been described with reference to FIGS. 1-6 ; however, the embodiment of FIG. 7 is not limited to this JBS device and also finds application to other types of electronic devices, in particular power devices, such as for example MOSFET, IGBT, MPS, Schottky diode, PN diode, PiN diode, etc.
The electronic device 100 comprises the elements described hereinafter, wherein elements common to the embodiments of FIGS. 2-6 are identified with the same reference numerals.
A semiconductor body 53 (e.g., including a substrate 53′ and, optionally, one or more epitaxial layers 53″ grown thereon), of N-type or P-type SiC (hereinafter non-limiting reference will be made to the sole N-type), is provided with a front surface 53 a opposite to a rear surface 53 b along the direction of the Z axis. The semiconductor body 53 includes the substrate 53′ having the epitaxial layer 53″ grown thereon acting as a drift layer of the electronic device 100, both of N-type SiC (in particular 4H—SiC, however other polytypes may be used such as, but not limited to, 2H—SiC, 3C—SiC and 6H—SiC). For example, the substrate 53′ has an N-type dopant concentration comprised between 1-10¹⁹at/cm³and 1-10²²at/cm³and has a thickness, measured along the Z axis between the surfaces 53 a and 53 b, comprised between 300 μm and 450 μm, and in particular equal to about 360 μm. The drift layer 53″ has a respective dopant concentration lower than the dopant concentration of the substrate and a thickness comprised, for example, between 5 and 15 μm.
An ohmic contact layer 56 (for example of Nickel Silicide) extends on the rear surface 53 b, and a metallization 57, in this example a cathode metallization, for example of Ti/NiV/Ag or Ti/NiV/Au, extends on the ohmic contact region 56.
One or more P-type doped regions 59′ extend in the semiconductor body 53 (in particular in the drift layer), facing the top surface 53 a; each doped region 59′ houses a respective ohmic contact (not shown and of known type) such that each doped region 59′ forms a respective Junction-Barrier (JB) element 59. An edge termination region, or guard ring, 60, in particular a further P-type doped region, extends in the drift layer, faces the top surface 53 a and completely surrounds (in plan view, on an XY plane defined by the axes X and Y) the JB elements 59. The edge termination region 60 may be omitted.
An insulating layer 61 (of insulating or dielectric material, e.g. Silicon Oxide, TEOS) extends on the top surface 53 a in such a way as to completely surround (in view on the XY plane) the JB elements 59 and to be partially superimposed on the guard ring 60 (when present).
A metallization 58, in this example an anode metallization, for example of Ti/AlSiCu or Ni/AlSiCu, extends on a portion of the top surface 53 a delimited externally by the insulating layer 61 (i.e., at the JB elements 59/active area 54) and, partially, on the insulating layer 61.
A passivation layer 69 of polymeric material such as polyimide (e.g., PIX), extends on the anode metallization 58 and on the insulating layer 61. The passivation layer 69 is delimited by a top side 69 a, a bottom side 69 b, opposite to the top side 69 a along the Z axis direction, and by lateral portions 69 c connecting the top side 69 a to the bottom side 69 b.
One or more Schottky diodes 62 are formed at the interface between the semiconductor body 53 and the anode metallization 58, laterally to the doped regions 59′. In particular, Schottky junctions (semiconductor-metal) are formed by portions of the semiconductor layer 53 in direct electrical contact with respective portions of the anode metallization 58.
Furthermore, each ohmic contact extending in the respective doped region 59′ provides an electrical connection having an electrical resistivity value lower than the electrical resistivity value of the doped region 59′ housing it. The JB elements 59 are therefore P-i-N diodes.
The region of the electronic device 100 that includes the JB elements 59 and the Schottky diodes 62 (i.e., the region delimited by the guard ring 60) is an active area 54 of the electronic device 100.
Outside the active area 54, i.e. beyond the edge termination region 60, a lateral surface 53 c of the semiconductor body 53 is present, for example extending substantially orthogonally to the top surface 53 a. The lateral surface 53 c is formed following a dicing, or singulation, step of a SiC wafer wherein a plurality of electronic devices 100 are provided. The dicing step has the function of separating an electronic device 100 from another device 100 of the same wafer. The dicing occurs at a scribe line (not shown) of the SiC wafer wherefrom the electronic device 100 is obtained; this scribe line surrounds at a distance, on the XY plane, the active region 54, the guard ring 60 and the insulating layer 61.
A protection layer 74, of a resin such as for example Bakelite, extends above the passivation layer 69, to protect the electronic device 50 when inserted in a package (not shown).
According to one aspect of the present disclosure, an interface layer 102 extends continuously between the passivation layer 69 and the underlying metallization 58 and insulating layers 61. In particular, the interface layer 102 is in direct contact with the anode metallization 58 and the insulating layer 61 on one side, and with the passivation layer 69 on the opposite side.
The interface layer 102 extends at least throughout the entire extension of the bottom side 69 b of the passivation layer 69. The interface layer 102 does not extend at the regions dedicated to housing the scribe line.
According to one aspect of the present disclosure, the interface layer 102 is of a material configured to have predetermined characteristics of adhesion to the material of the passivation layer 69 and to the layers 58 and 61, in order to prevent delaminations and/or detachments of the passivation layer 69. Materials for this purpose include aluminum oxide (or alumina) Al₂O₃and hafnium oxide Hf₂O₃. The Applicant has verified that a deposition by ALD (Atomic Layer Deposition) technique is effective in forming encapsulation layers 82 a, 82 b with characteristics of adhesion and protection suitable for the purposes of the present disclosure. The interface layer 102 has, for example, a thickness comprised between 8 nm and 100 nm, in particular between 10 nm and 50 nm. In addition to the aforementioned characteristics of adhesion, the Applicant has verified that the interface layer 102 of Hf₂O₃or Al₂O₃possesses humidity barrier properties.
An anchor element 88, as described with reference to FIG. 5 , may be implemented in the embodiment of FIG. 7 , in a per se evident manner and therefore not further described.
FIG. 8 shows a further embodiment of an electronic device 110, according to a further aspect of the present disclosure.
FIG. 8 shows, in lateral sectional view in the same Cartesian (triaxial) reference system of axes X, Y, Z, of FIGS. 1-7 , the electronic device 110. In particular, the device 110 is a JBS diode, in analogy to what has been described with reference to FIGS. 1-7 ; however, the embodiment of FIG. 8 is not limited to this JBS device and also finds application to other types of electronic devices, in particular power devices, such as for example MOSFET, IGBT, MPS, Schottky diode, PN diode, PiN diode, etc.
The electronic device 110 comprises the elements described hereinafter, wherein elements common to the embodiments of FIGS. 2-6 are identified with the same reference numerals.
A semiconductor body 53 (e.g., including a substrate 53′ and, optionally, one or more epitaxial layers 53″ grown thereon), of N-type or P-type SiC (hereinafter non-limiting reference will be made to the sole N-type), is provided with a front surface 53 a opposite to a rear surface 53 b along the direction of the Z axis. The semiconductor body 53 includes the substrate 53′ having the epitaxial layer 53″ grown thereon acting as a drift layer of the electronic device 110, both of N-type SiC (in particular 4H—SiC, however other polytypes may be used such as, but not limited to, 2H—SiC, 3C—SiC and 6H—SiC). For example, the substrate 53′ has an N-type dopant concentration comprised between 1-10¹⁹at/cm³and 1-10²²at/cm³and has a thickness, measured along the Z axis between the surfaces 53 a and 53 b, comprised between 300 μm and 450 μm, and in particular equal to about 360 μm. The drift layer 53″ has a respective dopant concentration lower than the dopant concentration of the substrate and a thickness comprised, for example, between 5 and 15 μm.
An ohmic contact layer 56 (for example of Nickel Silicide) extends on the rear surface 53 b, and a metallization 57, in this example a cathode metallization, for example of Ti/NiV/Ag or Ti/NiV/Au, extends on the ohmic contact region 56.
One or more P-type doped regions 59′ extend in the semiconductor body 53 (in particular in the drift layer), facing the top surface 53 a; each doped region 59′ houses a respective ohmic contact (not shown and of known type) such that each doped region 59′ forms a respective Junction-Barrier (JB) element 59. An edge termination region, or guard ring, 60, in particular a further P-type doped region, extends in the drift layer, faces the top surface 53 a and completely surrounds (in plan view, on an XY plane defined by the axes X and Y) the JB elements 59. The edge termination region 60 may be omitted.
An insulating layer 61 (of insulating or dielectric material, e.g. Silicon Oxide, TEOS) extends on the top surface 53 a in such a way as to completely surround (in view on the XY plane) the JB elements 59 and to be partially superimposed on the guard ring 60 (when present).
A metallization 58, in this example an anode metallization, for example of Ti/AlSiCu or Ni/AlSiCu, extends on a portion of the top surface 53 a delimited externally by the insulating layer 61 (i.e., at the JB elements 59/active area 54) and, partially, on the insulating layer 61.
A passivation layer 69 of polymeric material such as polyimide (e.g., PIX), extends on the anode metallization 58 and on the insulating layer 61. The passivation layer 69 is delimited by a top side 69 a, a bottom side 69 b, opposite to the top side 69 a along the Z axis direction, and by lateral portions 69 c connecting the top side 69 a to the bottom side 69 b.
An interface layer 63, here of Silicon Nitride (SiN), extends above the anode metallization 58 and the insulating layer 61, and below the passivation layer 69. In other words, the interface layer 63 acts as an interface between the passivation layer 69 and the underlying layers, here the metallization 58 and the insulating layer 61 and allows the adhesion of the overlying passivation layer 69.
One or more Schottky diodes 62 are formed at the interface between the semiconductor body 53 and the anode metallization 58, laterally to the doped regions 59′. In particular, Schottky junctions (semiconductor-metal) are formed by portions of the semiconductor layer 53 in direct electrical contact with respective portions of the anode metallization 58.
Furthermore, each ohmic contact extending in the respective doped region 59′ provides an electrical connection having an electrical resistivity value lower than the electrical resistivity value of the doped region 59′ housing it. The JB elements 59 are therefore P-i-N diodes.
The region of the electronic device 100 that includes the JB elements 59 and the Schottky diodes 62 (i.e., the region delimited by the guard ring 60) is an active area 54 of the electronic device 110.
Outside the active area 54, i.e. beyond the edge termination region 60, a lateral surface 53 c of the semiconductor body 53 is present, for example extending substantially orthogonally to the top surface 53 a. The lateral surface 53 c is formed following a dicing, or singulation, step of a SiC wafer wherein a plurality of electronic devices 110 are provided. The dicing step has the function of separating an electronic device 110 from another device 110 of the same wafer. The dicing occurs at a scribe line (not shown) of the SiC wafer wherefrom the electronic device 110 is obtained; this scribe line surrounds at a distance, on the XY plane, the active region 54, the guard ring 60 and the insulating layer 61.
A protection layer 74, of a resin such as for example Bakelite, extends above the passivation layer 69, to protect the electronic device 110 when inserted in a package (not shown).
According to the present disclosure, the electronic device 110 further comprises a covering layer or cap layer 112 which extends on the top side 69 a of the passivation layer 69 and on the lateral portions 69 c, up to reaching and contacting the top surface 53 a of the semiconductor body 53 on the right side of the representation of FIG. 8 , and on the metallization 58 on the left side of the representation of FIG. 8 , forming respective coupling regions 114. In this manner, the coupling regions 114 provide respective physical coupling elements between the cap layer 112 and the underlying layers, laterally to the passivation layer 69, to bond or maintain the passivation layer 69 in position, thus obviating a possible detachment or delamination of the passivation layer 69.
The cap layer 112 does not extend at the regions dedicated to housing the scribe line.
The material of the cap layer 112 is configured to have predetermined characteristics of adhesion to the material to the passivation layer 69 and underlying layers at coupling regions 114 (here, layers 58 and 53″).
Materials for the aforementioned purposes include aluminum oxide (or alumina) Al₂O₃and hafnium oxide Hf₂O₃, in particular in case the passivation layer 69 is of a material from among polyimide, HfO₂, ZrO₂, TiO₂, Ta₂O₅, TiN, ZnO, AZO, GZO.
The Applicant has verified that a deposition by ALD (Atomic Layer Deposition) technique is effective in forming the cap layer 112 with characteristics of adhesion and protection suitable for the purposes of the present disclosure. The cap layer 112 has, for example, a thickness comprised between 8 nm and 100 nm, in particular between 10 nm and 50 nm.
In addition to the aforementioned characteristics of adhesion, the Applicant has verified that the cap layer 112 of Hf₂O₃or Al₂O₃possesses humidity barrier properties.
In a per se evident manner and therefore not further described, it is possible to implement, in the embodiment of FIG. 8 , the indentations 86 with the respective elements 84 described with reference to FIG. 4 and/or the anchor element 88 described with reference to FIG. 5 .
From an examination of the characteristics of the present disclosure made according to the present disclosure the advantages that it affords are evident.
In particular, the one or more adhesion improving layers described improve the adhesion of the passivation layer 69 to the rest of the device, preventing delamination phenomena. It is thus possible to form the passivation layer 69 in polymeric materials, ensuring high electrical performances of the electronic device 50, 100 (due to the high dielectric strength of the passivation layer 69) and eliminating, at the same time, structural problems linked to the possible detachment of the passivation layer 69 (e.g., following thermal or use cycles of the electronic device 50, 100).
Consequently, the risk of damaging the electronic device 50, 100 as a result of electric discharges between metallizations set at different potentials (e.g., between the EQR metallization and the anode metallization 58) is avoided, and therefore the reliability of the electronic device 50, 100 increases, in particular when subject to high thermal excursions and operated in reverse bias condition.
The manufacturing steps described allow manufacturing the electronic device 50 and, respectively, 100 comprising the respective adhesion improvement elements starting from a SiC wafer, without limitations resulting from the starting material (SiC).
Finally, it is clear that modifications and variations may be made to the present disclosure described and illustrated herein without thereby departing from the scope of the present disclosure, as defined in the attached claims.
In particular, although the present disclosure has been described with explicit reference to SiC as the starting substrate material, the present disclosure also applies to devices based on substrates of other semiconductor materials, such as for example Silicon, GaN, etc.
An electronic device (50; 100; 110), may be summarized as including a solid body (53, 58, 61) including an electrical terminal (58) of the electronic device on the solid body (53); and a passivation layer (69) on the electrical terminal (58), of a first material, characterized in that it also includes a first adhesion improving layer (82; 102; 112) coupled to the passivation layer (69) and to the solid body (53), of a second material having predefined or selected characteristics of adhesion to the first material, and configured to bond together the passivation layer (69) and the solid body (53).
The second material may be one of Al₂O₃and Hf₂O₃.
The first adhesion improving layer (82 a; 102; 112) may extend between the solid body (53, 58, 61) and the passivation layer (69), in direct contact with the passivation layer (69).
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), and the first adhesion improving layer (82; 102; 112) may extend continuously on the top surface (69 a) of the passivation layer (69), on the lateral surfaces (69 c) of the passivation layer (69), and on the solid body (53, 58, 61) laterally to said lateral surfaces (69 c) of the passivation layer (69).
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), may further include a second adhesion improving layer (82 b) which may extend continuously on the top surface (69 a) of the passivation layer (69), on the lateral surfaces (69 c) of the passivation layer (69) and on the solid body (53, 58, 61) laterally to said lateral surfaces (69 c) of the passivation layer (69).
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), wherein the first adhesion improving layer (82 a) extends at the bottom surface (69 b) of the passivation layer (69) and on the solid body laterally to the lateral surfaces (69 c) of the passivation layer (69), may further include a second adhesion improving layer (82 b) which may extend continuously on the top surface (69 a) of the passivation layer (69), on the lateral surfaces (69 c) of the passivation layer (69) and on the first adhesion improving layer (82; 102; 112) laterally to the lateral surfaces (69 c) of the passivation layer (69).
The first and the second adhesion improving layers (82 a, 82 b) may be of a same material or of different materials, from among Al₂O₃and Hf₂O₃.
The electronic device may further include one or more coupling structures (92, 94) passing through the passivation layer (69), physically coupled to the first adhesion improving layer (82 a) and to the second adhesion improving layer (82 b).
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), may further include a second adhesion improving layer (82 b) which may extend continuously on the top surface (69 a) of the passivation layer (69) and, at least in part, on the lateral surfaces (69 c) of the passivation layer (69), said second adhesion improving layer (82 b) being absent on the solid body (53, 58, 61) laterally to said lateral surfaces (69 c) of the passivation layer (69), may further include one or more coupling structures (92, 94) passing through the passivation layer (69), physically coupled to the first adhesion improving layer (82 a) and to the second adhesion improving layer (82 b).
The one or more coupling structures (92, 94) may be columns of the same material as the second adhesion improving layer (82 b).
The top surface (69 a) of the passivation layer (69) may have one or more indentations (86) or roughness.
The solid body may include a semiconductor body (53) of Silicon Carbide and an insulating layer (61) on a surface (53 a) of the semiconductor body (53), the electrical terminal (58) extending in part on the surface (53 a) of the semiconductor body (53) and in part on the insulating layer (61), said passivation layer completely covering the electrical terminal (58) and the insulating layer (61), and said first adhesion improving layer (82 a) extending in direct contact with the electrical terminal (58) and the insulating layer (61) forming a first interface between the electrical terminal (58) and a second interface between the passivation layer (69) and the insulating layer (61).
The electronic device, may further include an anchor element (88) which protrudes from the passivation layer (69) towards the insulating layer (61) and extends completely through an opening of the first adhesion improving layer (82 a) and terminates within the first insulating layer (61).
The material of the passivation layer (69) may include polymeric material.
The electronic device, chosen from the group may include: a Schottky diode, a PiN diode, a PN diode, an MPS device, a JBS diode, a MOSFET, an IGBT, a power device.
A method for manufacturing an electronic device (50; 100; 110), may be summarized as including the steps of: providing a solid body (53, 58, 61) including an electrical terminal (58) of the electronic device on the solid body (53); and forming a passivation layer (69), of a first material, on the electrical terminal (58), characterized in that it also includes the step of coupling a first adhesion improving layer (82; 102; 112) to the passivation layer (69) and to the solid body (53), wherein the first adhesion improving layer (82; 102; 112) is of a second material having predefined or selected characteristics of adhesion to the first material, and is configured to bond together the passivation layer (69) and the solid body (53).
The first adhesion improving layer (82; 102; 112) may be of a material chosen from among Al₂O₃and Hf₂O₃.
The first adhesion improving layer (82 a; 102; 112) may be formed on the solid body (53, 58, 61) before the step of forming the passivation layer (69), said passivation layer being formed in direct contact with the first adhesion improving layer.
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), and the first adhesion improving layer (82; 102; 112) may extend continuously on the top surface (69 a) of the passivation layer (69), on the lateral surfaces (69 c) of the passivation layer (69) and on the solid body (53, 58, 61) laterally to said lateral surfaces (69 c) of the passivation layer (69).
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), and may further include the step of forming a second adhesion improving layer (82 b) which extends continuously on the top surface (69 a) of the passivation layer (69), on the lateral surfaces (69 c) of the passivation layer (69) and on the solid body (53, 58, 61) laterally to said lateral surfaces (69 c) of the passivation layer (69).
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), wherein the first adhesion improving layer (82 a) further extends on the solid body laterally to the lateral surfaces (69 c) of the passivation layer (69), the method may further include the step of forming a second adhesion improving layer (82 b) which extends on the top surface (69 a) of the passivation layer (69), on the lateral surfaces (69 c) of the passivation layer (69), and on the first adhesion improving layer (82; 102; 112) laterally to the lateral surfaces (69 c) of the passivation layer (69).
The first and the second adhesion improving layers (82 a, 82 b) may be of a same material or of different materials, from among Al₂O₃and Hf₂O₃.
The method may further include the step of forming, on the top surface (69 a) of the passivation layer (69), one or more indentations (86) or roughness.
The material of the passivation layer (69) may include polymeric material.
The method may further include the step of forming one or more coupling structures (92, 94) passing through the passivation layer (69), physically coupled to the first adhesion improving layer (82 a) and to the second adhesion improving layer (82 b).
The passivation layer (69) may have a top surface (69 a), a bottom surface (69 b) facing the solid body and lateral surfaces (69 c) which connect the top surface (69 a) to the bottom surface (69 b), may further include forming a second adhesion improving layer (82 b) which extends continuously on the top surface (69 a) of the passivation layer (69) and, at least in part, on the lateral surfaces (69 c) of the passivation layer (69), said second adhesion improving layer (82 b) being absent on the solid body (53, 58, 61) laterally to said lateral surfaces (69 c) of the passivation layer (69), and may further include the step of forming one or more coupling structures (92, 94) passing through the passivation layer (69), physically coupled to the first adhesion improving layer (82 a) and to the second adhesion improving layer (82 b).
The step of forming said one or more coupling structures (92, 94) may be performed simultaneously with the step of forming the second adhesion improving layer (82 b) and may include a CVD or ALD deposition step.
The first adhesion improving layer (82 a) may be formed by ALD technique.
The second adhesion improving layer (82 b) may be formed by ALD technique.
The various embodiments described above can be combined to provide further embodiments. Aspects of the embodiments can be modified, if necessary to employ concepts of the various patents, applications and publications to provide yet further embodiments.
These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure.

Claims

1. An electronic device, comprising:

a solid body including an electrical terminal of the electronic device on the solid body;

a passivation layer on the electrical terminal, of a first material, the passivation layer having a top surface, a bottom surface facing the solid body, and lateral surfaces which connect the top surface to the bottom surface; and

a first adhesion improving layer coupled to the passivation layer and to the solid body, the first adhesion improving layer comprising a second material having selected characteristics of adhesion to the first material, and configured to bond together the passivation layer and the solid body.

2. The electronic device according to claim 1, wherein the first adhesion improving layer extends between the solid body and the passivation layer, in direct contact with the passivation layer.

3. The electronic device according to claim 1, wherein the first adhesion improving layer extends continuously on the top surface of the passivation layer, on the lateral surfaces of the passivation layer, and on the solid body laterally to said lateral surfaces of the passivation layer.

4. The electronic device according to claim 2, further comprising a second adhesion improving layer which extends continuously on the top surface of the passivation layer, on the lateral surfaces of the passivation layer and on the solid body laterally to said lateral surfaces of the passivation layer.

5. The electronic device according to claim 2, wherein the first adhesion improving layer extends at the bottom surface of the passivation layer and on the solid body laterally to the lateral surfaces of the passivation layer,

further comprising a second adhesion improving layer which extends continuously on the top surface of the passivation layer, on the lateral surfaces of the passivation layer and on the first adhesion improving layer laterally to the lateral surfaces of the passivation layer.

6. The electronic device according to claim 4, further comprising one or more coupling structures passing through the passivation layer, physically coupled to the first adhesion improving layer and to the second adhesion improving layer.

7. The electronic device according to claim 6, wherein the one or more coupling structures are columns of the same material as the second adhesion improving layer.

8. The electronic device according to claim 3, wherein the top surface of the passivation layer has one or more indentations or roughness.

9. The electronic device according to claim 1, wherein the solid body comprises a semiconductor body of Silicon Carbide and an insulating layer on a surface of the semiconductor body, the electrical terminal extending in part on the surface of the semiconductor body and in part on the insulating layer,

wherein the passivation layer completely covers the electrical terminal and the insulating layer and the first adhesion improving layer extends in direct contact with the electrical terminal and the insulating layer forming a first interface between the electrical terminal and a second interface between the passivation layer and the insulating layer.

10. The electronic device according to claim 9, further comprising an anchor element which protrudes from the passivation layer towards the insulating layer and extends completely through an opening of the first adhesion improving layer and terminates within the first insulating layer.

11. A method for manufacturing an electronic device, comprising:

forming, in a solid body, a plurality of ohmic contacts;

forming an electrical terminal of the electronic device coupled to the plurality of ohmic contacts on the solid body; forming a passivation layer, of a first material, on the electrical terminal, the passivation layer having a first surface, a second surface opposite the first surface facing the solid body, and a plurality of lateral surfaces coupling the first surface to the second surface; and

forming a first adhesion improving layer directly coupled to the passivation layer and to the solid body, wherein the first adhesion improving layer is of a second material having selected characteristics of adhesion to the first material, and is configured to bond together the passivation layer and the solid body.

12. The method according to claim 11, further comprising forming a second adhesion improving layer which extends continuously on the first surface of the passivation layer, on the plurality of lateral surfaces of the passivation layer and on the solid body laterally to the plurality of lateral surfaces of the passivation layer.

13. The method according to claim 11, wherein the material of the passivation layer comprises polymeric material.

14. The method according to claim 12, further comprising forming one or more coupling structures passing through the passivation layer, physically coupled to the first adhesion improving layer and to the second adhesion improving layer.

15. The method according to claim 14, wherein the forming the one or more coupling structures is performed simultaneously with the forming the second adhesion improving layer and comprises a CVD or ALD deposition step.

16. The method according to claim 11, wherein the first adhesion improving layer is formed by ALD technique.

17. A device, comprising:

a substrate with a first surface opposite a second surface in a first direction;

a plurality of ohmic contacts in the first surface of the substrate, the plurality of ohmic contacts spaced from one another along a second direction transverse to the first direction;

an insulating layer on the first surface of the substrate, the insulating layer spaced along the second direction from the plurality of ohmic contacts;

a conductive layer on the first surface of the substrate, the conductive layer having a first surface opposite a second surface, the second surface of the conductive layer being coupled directly to the plurality of ohmic contacts and partially covering the insulating layer along the second direction;

a passivation layer coupled to the first surface of the conductive layer; and

a first encapsulation layer coupled between the passivation layer and the first surface of the conductive layer.

18. The device of claim 17, wherein the first encapsulation layer is coupled directly to the conductive layer, the insulating layer, and the first surface of the substrate.

19. The device of claim 18, comprising a second encapsulation layer, the second encapsulation layer being directly coupled to a first sidewall of the passivation layer, a second sidewall of the passivation layer, a first surface of the passivation layer, and the first encapsulation layer.

20. The device of claim 17, comprising an edge termination region in the substrate coplanar with the first surface of the substrate, the insulation layer partially covering the edge termination region along the first direction.