US20200308700A1 - Film-forming device - Google Patents
Film-forming device Download PDFInfo
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- US20200308700A1 US20200308700A1 US16/901,566 US202016901566A US2020308700A1 US 20200308700 A1 US20200308700 A1 US 20200308700A1 US 202016901566 A US202016901566 A US 202016901566A US 2020308700 A1 US2020308700 A1 US 2020308700A1
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- chamber
- film
- forming device
- inner chamber
- workpieces
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- 239000007789 gas Substances 0.000 claims description 62
- 238000000231 atomic layer deposition Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 description 37
- 230000008021 deposition Effects 0.000 description 35
- 239000000463 material Substances 0.000 description 19
- 239000003607 modifier Substances 0.000 description 18
- 239000012159 carrier gas Substances 0.000 description 14
- 238000012423 maintenance Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- FBSNEJXXSJHKHX-UHFFFAOYSA-N CC1=C(C(C=C1)([Pt]C)C)C Chemical compound CC1=C(C(C=C1)([Pt]C)C)C FBSNEJXXSJHKHX-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
Definitions
- the present invention relates to a film-forming device based on atomic layer deposition.
- Atomic layer deposition is known as a method of forming an oxide film on a substrate such as a semiconductor wafer.
- Patent Literature 1 JP 5221089 B discloses a film-forming device that forms a metal oxide film by ALD.
- the film-forming device disclosed in Patent Literature 1 includes a processing container having a vertical cylindrical shape and capable of maintaining a vacuum inside the processing container, a holding member that holds objects to be processed in multiple stages in the processing container, a heating device on an outer periphery of the processing container, a deposition material supply mechanism that supplies a deposition material to the processing container, an oxidant supply mechanism that supplies an oxidant to the processing container, a purge gas supply mechanism that supplies a purge gas to the processing container, an exhaust mechanism that exhausts gas in the processing container, and a control mechanism that controls the deposition material supply mechanism, the oxidant supply mechanism, the purge gas supply mechanism, and the exhaust mechanism.
- a wafer board on which wafers as objects to be processed are arranged in multiple stages can be inserted from below into the processing container.
- the wafer board with multiple wafers thereon is loaded into the processing container by being moved upward from below, and the processing container is hermetically sealed.
- a power supply to the heating device is controlled to increase the temperature of the wafer to maintain a process temperature, and the wafer board is rotated to start deposition in this state.
- the size of the film-forming device increases in the height direction as the number of objects to be processed (hereinafter also referred to as “workpieces”) increases, which makes it difficult to place and remove the workpieces. Further, an increased size of the film-forming device in the height direction creates, for example, the need to search for a building with a higher ceiling. Thus, environments in which the film-forming device can be placed are limited. In addition, maintenance and the like which require a worker to work underneath the chamber is dangerous.
- the present invention was made to solve the above problem, and aims to provide a film-forming device that allows workpieces to be easily placed and removed and that is reduced in size in the height direction.
- the film-forming device of the present invention is a film-forming device based on atomic layer deposition, which includes a chamber having a horizontal central axis, capable of maintaining a vacuum, and movable along the horizontal central axis, the chamber including an inner chamber and an outer chamber that houses the inner chamber; a workpiece holder that aligns and holds workpieces to be processed in multiple stages in the inner chamber; and a heater that heats an inside of the chamber.
- the film-forming device of the present invention further includes a control mechanism for controlling a pressure in the outer chamber to be higher than a pressure in the inner chamber.
- the workpiece holder aligns and holds the workpieces in multiple stages such that main surfaces of the workpieces are oriented in a vertical direction relative to the central axis of the chamber.
- the workpiece holder is constructed so as to be removably placed into and out of the inner chamber.
- the heater is removably attached to an outer wall of the inner chamber.
- the inner chamber is separately removable from the outer chamber, and is further horizontally pivotable relative to the outer chamber when separated therefrom.
- the present invention provides a film-forming device that allows workpieces to be easily placed and removed and that is reduced in size in the height direction.
- FIG. 1 is a schematic perspective view of a film-forming device according to an embodiment of the present invention.
- FIG. 2 is a schematic perspective view of a state in which a chamber is open in the film-forming device shown in FIG. 1 .
- FIG. 3 is a schematic perspective view of an example of a workpiece holder holding workpieces.
- FIG. 4 is a schematic perspective view of an example of a heater to be attached to an outer wall of an inner chamber.
- FIG. 5 is a perspective view of a state in which the inner chamber is moved horizontally in the film-forming device shown in FIG. 1 .
- FIG. 6 is a perspective view of a state in which the inner chamber is pivoted horizontally in the film-forming device shown in FIG. 1 .
- the film-forming device of the present invention is described below.
- the present invention is not limited to the following preferred embodiments, and may be suitably modified without departing from the gist of the present invention. Combinations of two or more preferred features described in the following preferred features are also within the scope of the present invention.
- horizontal does not necessarily refer to a strict horizontal direction.
- vertical does not necessarily refer to a strict vertical direction.
- the term includes a direction inclined by about ⁇ 10° relative to the vertical direction.
- the film-forming device of the present invention is a film-forming device based on atomic layer deposition (ALD).
- the film-forming device includes a chamber capable of maintaining a vacuum, a workpiece holder that aligns and holds workpieces to be processed in multiple stages in the chamber, and a heater that heats the inside of the chamber.
- the film-forming device of the present invention further includes a gas supply mechanism that supplies various gases into the chamber, and an exhaust mechanism that exhausts gas from the chamber.
- the film-forming device of the present invention further includes a rotation mechanism to rotate the workpiece holder.
- FIG. 1 is a schematic perspective view of a film-forming device according to an embodiment of the present invention.
- FIG. 2 is a schematic perspective view of a state in which a chamber is open in the film-forming device shown in FIG. 1 .
- a film-forming device 1 shown in FIG. 1 and FIG. 2 includes a chamber 10 capable of maintaining a vacuum therein, a workpiece holder 20 that aligns and holds workpieces W in multiple stages in the chamber 10 , and a heater 30 that heats the inside of the chamber 10 .
- the film-forming device 1 further includes a gas supply pipe group 40 that supplies various gases into the chamber 10 , an exhaust pipe 50 that exhausts gas from the chamber 10 , and a rotation mechanism 60 to rotate the workpiece holder 20 .
- the chamber has its central axis aligned horizontally and preferably is a cylindrical body.
- the chamber 10 includes an inner chamber 11 in which the workpiece holder 20 (see FIG. 2 ) is placed and an outer chamber 12 that houses the inner chamber 11 .
- the inner chamber 11 includes a first lid 11 a defining one side of the cylindrical body, a second lid 11 b defining the other side of the cylindrical body, and a chamber body 11 c defining a peripheral surface of the cylindrical body.
- the first lid 11 a is fixed to the film-forming device 1
- the second lid 11 b is removably connected to a flange of the chamber body 11 c .
- the chamber body 11 c is removably connected to the first lid 11 a , and is movable horizontally along with the second lid 11 b (see FIG. 2 ).
- the outer chamber 12 includes a first lid 12 a defining one side of the cylindrical body, a second lid 12 b defining the other side of the cylindrical body, and a chamber body 12 c defining the peripheral surface of the cylindrical body.
- the first lid 12 a is fixed to the film-forming device 1
- the second lid 12 b is removably connected to a flange of the chamber body 12 c .
- the chamber body 12 c is removably connected to the first lid 12 a , and is movable horizontally along with the second lid 12 b (see FIG. 2 ).
- the film-forming device 1 includes a guide 13 .
- the second lid 11 b and the chamber body 11 c of the inner chamber 11 are movable horizontally on the guide 13 along with the second lid 12 b and the chamber body 12 c of the outer chamber 12 by the driving of a motor (not shown). The driving is stopped after these members are moved to predetermined positions, whereby the chamber 10 is opened.
- the chamber when the chamber is a horizontal type and is movable horizontally, it provides enough space so that the workpieces can be easily placed and removed. Even when the number of workpieces is large, the size of the film-forming device can be reduced in the height direction. Thus, environments in which the film-forming device can be placed are less limited.
- the phrase that “the chamber is movable horizontally” includes not only a case where the chamber is entirely movable horizontally but also a case where a portion of the chamber is fixed to the film-forming device. Thus, in FIG. 2 , both the inner chamber and the outer chamber are considered to be movable horizontally.
- the chamber including the inner chamber and the outer chamber can reduce or prevent leakage of harmful gases such as a deposition gas containing a deposition material or a modifier. As a result, a deposition gas atmosphere in the chamber is stabilized.
- the film-forming device of the present invention further includes a control mechanism that performs control such that the pressure in the outer chamber is higher than the pressure in the inner chamber.
- the gas is less likely to flow from the inner chamber to the outer chamber, which provides safety during deposition, and reduces or prevents attachment of the deposition material or the like to an inner surface of the outer chamber.
- the pressure in the outer chamber can be made higher than the pressure in the inner chamber by, for example, controlling the emission and gas supply in the outer chamber and the inner chamber separately while the chamber is closed.
- the workpiece holder is removably placed in the inner chamber.
- the workpiece holder 20 is removably connected to the first lid 11 a of the inner chamber 11 .
- the workpiece holder 20 is not connected to the second lid 11 b of the inner chamber 11 , and is thus cantilever-supported by the first lid 11 a .
- the workpiece holder may be directly placed in the chamber or may be placed via a support jig fixed in the chamber.
- the workpiece holder aligns and holds workpieces in multiple stages such that main surfaces of the workpieces are oriented vertically relative to the central axis of the chamber. In this case, these workpieces are arranged so as to be spaced apart from each other, with their main surfaces opposing each other.
- FIG. 3 is a schematic perspective view of an example of a workpiece holder holding workpieces.
- the workpiece holder 20 shown in FIG. 3 includes a pair of support plates 20 a and 20 b and multiple support posts 20 c 1 , 20 c 2 , 20 c 3 , and 20 c 4 coupled to the support plates 20 a and 20 b .
- the support posts 20 c 1 , 20 c 2 , 20 c 3 , and 20 c 4 each include multiple grooves 25 to hold the workpieces W.
- the workpieces W are held with their main surfaces oriented vertically.
- the support post 20 c 1 is removable.
- the position of a heater is not limited as long as the heater can heat the inside of the chamber.
- the heater is attached to an outer wall of the inner chamber.
- the heater is removably attached to the outer wall of the inner chamber.
- the temperature in the inner chamber is stabilized by the heater attached to the outer wall of the inner chamber, which enables uniform deposition.
- the heater is removable, it makes maintenance easy.
- FIG. 4 is a schematic perspective view of an example of the heater to be attached to the outer wall of the inner chamber.
- a heater 30 a is attached to cover the outer wall of the first lid 11 a of the inner chamber; a heater 30 b is attached to cover the outer wall of the second lid 11 b of the inner chamber; and heaters 30 c 1 and 30 c 2 are attached to cover the outer wall of the chamber body 11 c of the inner chamber.
- the heaters 30 c 1 and 30 c 2 each include heater wires 35 in three separate blocks, i.e., the center and ends thereof when viewed in the longitudinal direction of the chamber body 11 c . These blocks are separately controllable.
- the film-forming device of the present invention further includes a gas supply mechanism that supplies various gases to the inner chamber.
- the film-forming device further includes gas supply pipes that supply various gases to the inner chamber, such as the gas supply pipe group 40 shown in FIG. 2 .
- Each gas supply pipe usually includes multiple gas outlets.
- the gas supply pipe group 40 is connected to the first lid 11 a of the inner chamber 11 .
- the gas supply pipe group 40 is not connected to the second lid 11 b of the inner chamber 11 , and is thus cantilever-supported by the first lid 11 a.
- gas supply pipes include the following three types: a deposition material supply pipe, a modifier supply pipe, and a carrier gas supply pipe.
- the number of the carrier gas supply pipes is the largest.
- the deposition material supply pipe is a gas supply pipe that supplies a gas containing a deposition material that is a precursor of a compound to be deposited.
- ALD can deposit metal oxides such as alumina (Al 2 O 3 ) and silica (SiO 2 ); metal nitrides such as titanium nitride (TiN); and metals such as platinum (Pt).
- metal oxides such as alumina (Al 2 O 3 ) and silica (SiO 2 ); metal nitrides such as titanium nitride (TiN); and metals such as platinum (Pt).
- the deposition material examples include trimethylaluminum (TMA: Al(CH 3 ) 3 ) to deposit alumina, trisdimethylaminosilane (SiH[N(CH 3 ) 2 ] 3 ) to deposit silica, titanium tetrachloride (TiCl 4 ) to deposit titanium nitride, and (trimethyl)methylcyclopentadienyl platinum (MeCpPtMe 3 ) to deposit platinum.
- TMA trimethylaluminum
- SiH[N(CH 3 ) 2 ] 3 trisdimethylaminosilane
- TiCl 4 titanium tetrachloride
- MeCpPtMe 3 platinum
- a carrier gas is also supplied with the deposition material through the deposition material supply pipe.
- a mixed gas of the deposition material and a carrier gas is prepared outside the film-forming device, and the mixed gas is supplied into the chamber through the deposition material supply pipe.
- the modifier supply pipe is a gas supply pipe that supplies a gas as a modifier that modifies a precursor of a compound to be deposited in order to obtain a compound to be deposited.
- gas as a modifier examples include ozone, oxygen, water (steam), and ammonia.
- alumina in the case of alumina deposition, alumina can be deposited on workpieces by using TMA as a precursor and using ozone gas or water as a modifier.
- silica can be deposited on workpieces by using trisdimethylaminosilane as a precursor and using ozone gas as a modifier.
- titanium nitride can be deposited on workpieces by using titanium tetrachloride as a precursor and using ammonia gas as a modifier.
- platinum can be deposited on workpieces by using MeCpPtMe 3 as a precursor and using oxygen gas as a modifier.
- a carrier gas is also supplied with the modifier through the modifier supply pipe.
- a mixed gas of the modifier and a carrier gas is prepared outside the film-forming device, and the mixed gas is supplied into the chamber through the modifier supply pipe.
- the carrier gas supply pipe is a gas supply pipe that supplies a carrier gas as a purge gas after a deposition material is accumulated on the workpieces, and as a purge gas after a compound to be deposited is accumulated on the workpieces by a reaction of a modifier with the deposition material.
- the carrier gas examples include inert gases such as nitrogen gas and argon gas.
- the same type of carrier gas as the carrier gas supplied through the carrier gas supply pipe is introduced into the deposition material supply pipe and the modifier supply pipe.
- the carrier gas is constantly introduced through the three types of gas supply pipes.
- Clogging of the gas supply pipes by the deposition material or the modifier can be prevented by constantly introducing the carrier gas through the three types of gas supply pipes.
- the film-forming device of the present invention further includes an exhaust mechanism that exhausts gas from the inner chamber and gas from the outer chamber separately.
- the film-forming device further includes an exhaust pipe that exhausts gas in the inner chamber, such as the exhaust pipe 50 shown in FIG. 2 .
- the exhaust pipe includes multiple air inlets, and is connected to an exhaust device such as a vacuum pump at an end (located outside of the chamber) of the pipe so that gases in the inner chamber can be exhausted.
- the exhaust pipe 50 is connected to the first lid 11 a of the inner chamber 11 .
- the exhaust pipe 50 is not connected to the second lid 11 b of the inner chamber 11 , and is thus cantilever-supported by the first lid 11 a.
- the film-forming device of the present invention further includes a flow direction regulator that changes the direction of gas flow from the gas supply pipes such that the gas flow is directed to the exhaust pipes.
- the film-forming device of the present invention further includes a rotation mechanism to rotate the workpiece holder, such as the rotation mechanism 60 shown in FIG. 2 .
- the rotation mechanism includes a horizontal rotation axis.
- a motor or the like can be used to rotate the workpiece holder.
- Rotating the workpiece holder in the chamber allows the gases in the chamber to flow uniformly, so that films deposited on the main surfaces of the workpieces W can have a uniform thickness.
- the rotation mechanism 60 is provided on the first lid 11 a of the inner chamber 11 , and is capable of rotating the workpiece holder 20 cantilever-supported by the first lid 11 a.
- the chamber is further pivotable horizontally.
- the direction of the chamber can be changed to a position suitable for work, which makes maintenance easy.
- FIG. 5 is a perspective view of a state in which the inner chamber is moved horizontally in the film-forming device shown in FIG. 1 .
- the second lid 11 b and the chamber body 11 c of the inner chamber are moved horizontally along with the second lid 12 b of the outer chamber.
- the first lid 11 a (not shown) of the inner chamber and the first lid 12 a and the chamber body 12 c of the outer chamber are fixed. In this case, only the inner chamber is considered to be moved horizontally.
- FIG. 6 is a perspective view of a state in which the inner chamber is pivoted horizontally in the film-forming device shown in FIG. 1 .
- the second lid 11 b and the chamber body 11 c in the inner chamber are pivoted horizontally along with the second lid 12 b of the outer chamber. In this case, only the inner chamber is considered to be pivoted horizontally.
- the pivot angle is not limited, but is preferably 70 degrees to 110 degrees in order to make maintenance easy.
- the deposition method by ALD workpieces are set in a chamber capable of maintaining a vacuum, and the vacuum is maintained in the chamber.
- the method includes supplying a deposition material into the chamber and supplying a modifier into the chamber. The method repeats these steps several times to form a reaction film on each workpiece.
- the following shows an example of a deposition process using the film-forming device of the present invention.
- the chamber is moved horizontally by the motor and the guide and opened.
- the workpiece holder in which workpieces are set in advance is placed in a position on the film-forming device so as to be placed in the chamber.
- the chamber is moved horizontally back to the original position and closed.
- the inside of the chamber is heated by the heater.
- the chamber is vented to atmosphere.
- the chamber is moved horizontally by the motor and the guide and opened.
- the following shows an example of a maintenance process of the film-forming device of the present invention.
- the film-forming device of the present invention is not limited to the above preferred embodiments. Various modifications and changes can be made to the structure and the like of the film-forming device without departing from the gist of the present invention.
- the inner chamber and the outer chamber are separately movable horizontally.
- the inner chamber and the outer chamber may move horizontally together, or only the inner chamber may move horizontally.
- the inner chamber and the outer chamber are separately pivotable horizontally.
- the inner chamber and the outer chamber may pivot horizontally together, or only the inner chamber may pivot horizontally.
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Abstract
Description
- The present application is a continuation of International application No. PCT/JP2018/044922, filed Dec. 6, 2018, which claims priority to Japanese Patent Application No. 2017-246512, filed Dec. 22, 2017, the entire contents of each of which are incorporated herein by reference.
- The present invention relates to a film-forming device based on atomic layer deposition.
- Atomic layer deposition (ALD) is known as a method of forming an oxide film on a substrate such as a semiconductor wafer.
- Patent Literature 1 (JP 5221089 B) discloses a film-forming device that forms a metal oxide film by ALD. The film-forming device disclosed in
Patent Literature 1 includes a processing container having a vertical cylindrical shape and capable of maintaining a vacuum inside the processing container, a holding member that holds objects to be processed in multiple stages in the processing container, a heating device on an outer periphery of the processing container, a deposition material supply mechanism that supplies a deposition material to the processing container, an oxidant supply mechanism that supplies an oxidant to the processing container, a purge gas supply mechanism that supplies a purge gas to the processing container, an exhaust mechanism that exhausts gas in the processing container, and a control mechanism that controls the deposition material supply mechanism, the oxidant supply mechanism, the purge gas supply mechanism, and the exhaust mechanism. - In the film-forming device disclosed in
Patent Literature 1, a wafer board on which wafers as objects to be processed are arranged in multiple stages can be inserted from below into the processing container. During deposition, the wafer board with multiple wafers thereon is loaded into the processing container by being moved upward from below, and the processing container is hermetically sealed. - Then, while the processing container is vacuumed and maintained at a predetermined process pressure, a power supply to the heating device is controlled to increase the temperature of the wafer to maintain a process temperature, and the wafer board is rotated to start deposition in this state.
- In the case of a vertical processing container (hereinafter also referred to as a “chamber”) as in the film-forming device disclosed in
Patent Literature 1, the size of the film-forming device increases in the height direction as the number of objects to be processed (hereinafter also referred to as “workpieces”) increases, which makes it difficult to place and remove the workpieces. Further, an increased size of the film-forming device in the height direction creates, for example, the need to search for a building with a higher ceiling. Thus, environments in which the film-forming device can be placed are limited. In addition, maintenance and the like which require a worker to work underneath the chamber is dangerous. - The present invention was made to solve the above problem, and aims to provide a film-forming device that allows workpieces to be easily placed and removed and that is reduced in size in the height direction.
- The film-forming device of the present invention is a film-forming device based on atomic layer deposition, which includes a chamber having a horizontal central axis, capable of maintaining a vacuum, and movable along the horizontal central axis, the chamber including an inner chamber and an outer chamber that houses the inner chamber; a workpiece holder that aligns and holds workpieces to be processed in multiple stages in the inner chamber; and a heater that heats an inside of the chamber.
- Preferably, the film-forming device of the present invention further includes a control mechanism for controlling a pressure in the outer chamber to be higher than a pressure in the inner chamber.
- In the film-forming device of the present invention, preferably, the workpiece holder aligns and holds the workpieces in multiple stages such that main surfaces of the workpieces are oriented in a vertical direction relative to the central axis of the chamber.
- In the film-forming device of the present invention, preferably, the workpiece holder is constructed so as to be removably placed into and out of the inner chamber.
- In the film-forming device of the present invention, preferably, the heater is removably attached to an outer wall of the inner chamber.
- In the film-forming device of the present invention, preferably, the inner chamber is separately removable from the outer chamber, and is further horizontally pivotable relative to the outer chamber when separated therefrom.
- The present invention provides a film-forming device that allows workpieces to be easily placed and removed and that is reduced in size in the height direction.
-
FIG. 1 is a schematic perspective view of a film-forming device according to an embodiment of the present invention. -
FIG. 2 is a schematic perspective view of a state in which a chamber is open in the film-forming device shown inFIG. 1 . -
FIG. 3 is a schematic perspective view of an example of a workpiece holder holding workpieces. -
FIG. 4 is a schematic perspective view of an example of a heater to be attached to an outer wall of an inner chamber. -
FIG. 5 is a perspective view of a state in which the inner chamber is moved horizontally in the film-forming device shown inFIG. 1 . -
FIG. 6 is a perspective view of a state in which the inner chamber is pivoted horizontally in the film-forming device shown inFIG. 1 . - The film-forming device of the present invention is described below.
- The present invention is not limited to the following preferred embodiments, and may be suitably modified without departing from the gist of the present invention. Combinations of two or more preferred features described in the following preferred features are also within the scope of the present invention.
- The term “horizontally” as used herein does not necessarily refer to a strict horizontal direction. For example, the term includes a direction inclined by about ±10° relative to the horizontal direction. Similarly, the term “vertically” as used herein does not necessarily refer to a strict vertical direction. For example, the term includes a direction inclined by about ±10° relative to the vertical direction.
- The film-forming device of the present invention is a film-forming device based on atomic layer deposition (ALD). The film-forming device includes a chamber capable of maintaining a vacuum, a workpiece holder that aligns and holds workpieces to be processed in multiple stages in the chamber, and a heater that heats the inside of the chamber. The film-forming device of the present invention further includes a gas supply mechanism that supplies various gases into the chamber, and an exhaust mechanism that exhausts gas from the chamber. Preferably, the film-forming device of the present invention further includes a rotation mechanism to rotate the workpiece holder.
-
FIG. 1 is a schematic perspective view of a film-forming device according to an embodiment of the present invention.FIG. 2 is a schematic perspective view of a state in which a chamber is open in the film-forming device shown inFIG. 1 . - A film-forming
device 1 shown inFIG. 1 andFIG. 2 includes achamber 10 capable of maintaining a vacuum therein, aworkpiece holder 20 that aligns and holds workpieces W in multiple stages in thechamber 10, and aheater 30 that heats the inside of thechamber 10. The film-formingdevice 1 further includes a gassupply pipe group 40 that supplies various gases into thechamber 10, anexhaust pipe 50 that exhausts gas from thechamber 10, and arotation mechanism 60 to rotate theworkpiece holder 20. - In the film-forming device of the present invention, the chamber has its central axis aligned horizontally and preferably is a cylindrical body. In
FIG. 1 , thechamber 10 includes aninner chamber 11 in which the workpiece holder 20 (seeFIG. 2 ) is placed and anouter chamber 12 that houses theinner chamber 11. - In
FIG. 2 , theinner chamber 11 includes afirst lid 11 a defining one side of the cylindrical body, asecond lid 11 b defining the other side of the cylindrical body, and achamber body 11 c defining a peripheral surface of the cylindrical body. Thefirst lid 11 a is fixed to the film-formingdevice 1, and thesecond lid 11 b is removably connected to a flange of thechamber body 11 c. Thechamber body 11 c is removably connected to thefirst lid 11 a, and is movable horizontally along with thesecond lid 11 b (seeFIG. 2 ). - Similarly, the
outer chamber 12 includes afirst lid 12 a defining one side of the cylindrical body, asecond lid 12 b defining the other side of the cylindrical body, and achamber body 12 c defining the peripheral surface of the cylindrical body. Thefirst lid 12 a is fixed to the film-formingdevice 1, and thesecond lid 12 b is removably connected to a flange of thechamber body 12 c. Thechamber body 12 c is removably connected to thefirst lid 12 a, and is movable horizontally along with thesecond lid 12 b (seeFIG. 2 ). - The film-forming
device 1 includes aguide 13. Thesecond lid 11 b and thechamber body 11 c of theinner chamber 11 are movable horizontally on theguide 13 along with thesecond lid 12 b and thechamber body 12 c of theouter chamber 12 by the driving of a motor (not shown). The driving is stopped after these members are moved to predetermined positions, whereby thechamber 10 is opened. - As described above, when the chamber is a horizontal type and is movable horizontally, it provides enough space so that the workpieces can be easily placed and removed. Even when the number of workpieces is large, the size of the film-forming device can be reduced in the height direction. Thus, environments in which the film-forming device can be placed are less limited.
- The phrase that “the chamber is movable horizontally” includes not only a case where the chamber is entirely movable horizontally but also a case where a portion of the chamber is fixed to the film-forming device. Thus, in
FIG. 2 , both the inner chamber and the outer chamber are considered to be movable horizontally. - In addition, the chamber including the inner chamber and the outer chamber can reduce or prevent leakage of harmful gases such as a deposition gas containing a deposition material or a modifier. As a result, a deposition gas atmosphere in the chamber is stabilized.
- Although not shown in
FIG. 1 andFIG. 2 , preferably, the film-forming device of the present invention further includes a control mechanism that performs control such that the pressure in the outer chamber is higher than the pressure in the inner chamber. - When the pressure in the outer chamber is higher than the pressure in the inner chamber, the gas is less likely to flow from the inner chamber to the outer chamber, which provides safety during deposition, and reduces or prevents attachment of the deposition material or the like to an inner surface of the outer chamber.
- The pressure in the outer chamber can be made higher than the pressure in the inner chamber by, for example, controlling the emission and gas supply in the outer chamber and the inner chamber separately while the chamber is closed.
- In the film-forming device of the present invention, preferably, the workpiece holder is removably placed in the inner chamber. In
FIG. 2 , theworkpiece holder 20 is removably connected to thefirst lid 11 a of theinner chamber 11. Theworkpiece holder 20 is not connected to thesecond lid 11 b of theinner chamber 11, and is thus cantilever-supported by thefirst lid 11 a. The workpiece holder may be directly placed in the chamber or may be placed via a support jig fixed in the chamber. - The direction in which the workpiece holder holds the workpieces is not limited. Yet, as shown in
FIG. 2 , preferably, the workpiece holder aligns and holds workpieces in multiple stages such that main surfaces of the workpieces are oriented vertically relative to the central axis of the chamber. In this case, these workpieces are arranged so as to be spaced apart from each other, with their main surfaces opposing each other. - When deposition is performed on workpieces arranged with their main surfaces oriented vertically, particles as impurities are less likely to remain on the main surfaces of the workpieces. In addition, there is no risk of the workpieces falling from an upper portion of the chamber as compared to the case where the workpieces are stacked vertically. Thus, work can be performed safely.
-
FIG. 3 is a schematic perspective view of an example of a workpiece holder holding workpieces. - The
workpiece holder 20 shown inFIG. 3 includes a pair ofsupport plates support plates multiple grooves 25 to hold the workpieces W. The workpieces W are held with their main surfaces oriented vertically. The support post 20 c 1 is removable. - In the film-forming device of the present invention, the position of a heater is not limited as long as the heater can heat the inside of the chamber. Yet, preferably, the heater is attached to an outer wall of the inner chamber. In particular, preferably, the heater is removably attached to the outer wall of the inner chamber.
- The temperature in the inner chamber is stabilized by the heater attached to the outer wall of the inner chamber, which enables uniform deposition. In particular, when the heater is removable, it makes maintenance easy.
-
FIG. 4 is a schematic perspective view of an example of the heater to be attached to the outer wall of the inner chamber. - In
FIG. 4 , aheater 30 a is attached to cover the outer wall of thefirst lid 11 a of the inner chamber; aheater 30 b is attached to cover the outer wall of thesecond lid 11 b of the inner chamber; and heaters 30 c 1 and 30 c 2 are attached to cover the outer wall of thechamber body 11 c of the inner chamber. The heaters 30 c 1 and 30 c 2 each includeheater wires 35 in three separate blocks, i.e., the center and ends thereof when viewed in the longitudinal direction of thechamber body 11 c. These blocks are separately controllable. - Preferably, the film-forming device of the present invention further includes a gas supply mechanism that supplies various gases to the inner chamber. In particular, preferably, the film-forming device further includes gas supply pipes that supply various gases to the inner chamber, such as the gas
supply pipe group 40 shown inFIG. 2 . Each gas supply pipe usually includes multiple gas outlets. - In
FIG. 2 , the gassupply pipe group 40 is connected to thefirst lid 11 a of theinner chamber 11. The gassupply pipe group 40 is not connected to thesecond lid 11 b of theinner chamber 11, and is thus cantilever-supported by thefirst lid 11 a. - Examples of the gas supply pipes include the following three types: a deposition material supply pipe, a modifier supply pipe, and a carrier gas supply pipe.
- There are no limitations as to how many of which types of gas supply pipes are included in the gas
supply pipe group 40 shown inFIG. 2 . Yet, preferably, the number of the carrier gas supply pipes is the largest. - In deposition by ALD, the deposition material supply pipe is a gas supply pipe that supplies a gas containing a deposition material that is a precursor of a compound to be deposited.
- ALD can deposit metal oxides such as alumina (Al2O3) and silica (SiO2); metal nitrides such as titanium nitride (TiN); and metals such as platinum (Pt).
- Examples of the deposition material include trimethylaluminum (TMA: Al(CH3)3) to deposit alumina, trisdimethylaminosilane (SiH[N(CH3)2]3) to deposit silica, titanium tetrachloride (TiCl4) to deposit titanium nitride, and (trimethyl)methylcyclopentadienyl platinum (MeCpPtMe3) to deposit platinum.
- Preferably, a carrier gas is also supplied with the deposition material through the deposition material supply pipe.
- In this case, preferably, a mixed gas of the deposition material and a carrier gas is prepared outside the film-forming device, and the mixed gas is supplied into the chamber through the deposition material supply pipe.
- In deposition by ALD, the modifier supply pipe is a gas supply pipe that supplies a gas as a modifier that modifies a precursor of a compound to be deposited in order to obtain a compound to be deposited.
- Examples of the gas as a modifier include ozone, oxygen, water (steam), and ammonia.
- In the case of alumina deposition, alumina can be deposited on workpieces by using TMA as a precursor and using ozone gas or water as a modifier.
- In the case of silica deposition, silica can be deposited on workpieces by using trisdimethylaminosilane as a precursor and using ozone gas as a modifier.
- In the case of titanium nitride deposition, titanium nitride can be deposited on workpieces by using titanium tetrachloride as a precursor and using ammonia gas as a modifier.
- In the case of platinum deposition, platinum can be deposited on workpieces by using MeCpPtMe3 as a precursor and using oxygen gas as a modifier.
- Preferably, a carrier gas is also supplied with the modifier through the modifier supply pipe.
- In this case, preferably, a mixed gas of the modifier and a carrier gas is prepared outside the film-forming device, and the mixed gas is supplied into the chamber through the modifier supply pipe.
- In deposition by ALD, the carrier gas supply pipe is a gas supply pipe that supplies a carrier gas as a purge gas after a deposition material is accumulated on the workpieces, and as a purge gas after a compound to be deposited is accumulated on the workpieces by a reaction of a modifier with the deposition material.
- Examples of the carrier gas include inert gases such as nitrogen gas and argon gas.
- Preferably, the same type of carrier gas as the carrier gas supplied through the carrier gas supply pipe is introduced into the deposition material supply pipe and the modifier supply pipe. Preferably, the carrier gas is constantly introduced through the three types of gas supply pipes.
- Clogging of the gas supply pipes by the deposition material or the modifier can be prevented by constantly introducing the carrier gas through the three types of gas supply pipes.
- Preferably, the film-forming device of the present invention further includes an exhaust mechanism that exhausts gas from the inner chamber and gas from the outer chamber separately. In particular, preferably, the film-forming device further includes an exhaust pipe that exhausts gas in the inner chamber, such as the
exhaust pipe 50 shown inFIG. 2 . Usually, the exhaust pipe includes multiple air inlets, and is connected to an exhaust device such as a vacuum pump at an end (located outside of the chamber) of the pipe so that gases in the inner chamber can be exhausted. - In
FIG. 2 , theexhaust pipe 50 is connected to thefirst lid 11 a of theinner chamber 11. Theexhaust pipe 50 is not connected to thesecond lid 11 b of theinner chamber 11, and is thus cantilever-supported by thefirst lid 11 a. - Preferably, gases supplied into the chamber through the gas supply pipes are retained on the workpieces and then flow into the exhaust pipe. Thus, although not shown in
FIG. 1 andFIG. 2 , preferably, the film-forming device of the present invention further includes a flow direction regulator that changes the direction of gas flow from the gas supply pipes such that the gas flow is directed to the exhaust pipes. - Preferably, the film-forming device of the present invention further includes a rotation mechanism to rotate the workpiece holder, such as the
rotation mechanism 60 shown inFIG. 2 . When the workpiece holder aligns and holds the workpieces in multiple stages such that the main surfaces of the workpieces are oriented vertically, the rotation mechanism includes a horizontal rotation axis. For example, a motor or the like can be used to rotate the workpiece holder. - Rotating the workpiece holder in the chamber allows the gases in the chamber to flow uniformly, so that films deposited on the main surfaces of the workpieces W can have a uniform thickness.
- In
FIG. 2 , therotation mechanism 60 is provided on thefirst lid 11 a of theinner chamber 11, and is capable of rotating theworkpiece holder 20 cantilever-supported by thefirst lid 11 a. - In the film-forming device of the present invention, preferably, the chamber is further pivotable horizontally.
- When the chamber is pivotable horizontally, the direction of the chamber can be changed to a position suitable for work, which makes maintenance easy.
-
FIG. 5 is a perspective view of a state in which the inner chamber is moved horizontally in the film-forming device shown inFIG. 1 . - In
FIG. 5 , thesecond lid 11 b and thechamber body 11 c of the inner chamber are moved horizontally along with thesecond lid 12 b of the outer chamber. In contrast, thefirst lid 11 a (not shown) of the inner chamber and thefirst lid 12 a and thechamber body 12 c of the outer chamber are fixed. In this case, only the inner chamber is considered to be moved horizontally. -
FIG. 6 is a perspective view of a state in which the inner chamber is pivoted horizontally in the film-forming device shown inFIG. 1 . - In
FIG. 6 , thesecond lid 11 b and thechamber body 11 c in the inner chamber are pivoted horizontally along with thesecond lid 12 b of the outer chamber. In this case, only the inner chamber is considered to be pivoted horizontally. - In the film-forming device of the present invention, when the chamber is pivotable horizontally, the pivot angle is not limited, but is preferably 70 degrees to 110 degrees in order to make maintenance easy.
- The following describes how to use the film-forming device of the present invention, separately for deposition and for maintenance.
- Before describing deposition using the film-forming device of the present invention, a deposition method by ALD is described.
- According to the deposition method by ALD, workpieces are set in a chamber capable of maintaining a vacuum, and the vacuum is maintained in the chamber. In this state, the method includes supplying a deposition material into the chamber and supplying a modifier into the chamber. The method repeats these steps several times to form a reaction film on each workpiece.
- The following shows an example of a deposition process using the film-forming device of the present invention.
- 1. The chamber is moved horizontally by the motor and the guide and opened.
- 2. The workpiece holder in which workpieces are set in advance is placed in a position on the film-forming device so as to be placed in the chamber.
- 3. The chamber is moved horizontally back to the original position and closed.
- 4. A vacuum is created in the chamber.
- 5. The inside of the chamber is heated by the heater.
- 6. When a predetermined pressure is reached in the chamber, a gas containing a deposition material and a gas containing a modifier are alternately introduced into the chamber.
- 7. Gas supply is repeated until a predetermined film is formed.
- 8. Heating in the chamber is stopped.
- 9. The chamber is vented to atmosphere.
- 10. The chamber is moved horizontally by the motor and the guide and opened.
- 11. The workpiece holder is removed.
- The following shows an example of a maintenance process of the film-forming device of the present invention.
- 1. Only the inner chamber is moved horizontally by the motor and the guide, while the outer chamber is left unmoved.
- 2. Maintenance is performed on the outer chamber and/or the inner chamber.
- 3. When the inner chamber is pivotable, it makes maintenance easy. When the heater is removably attached to the outer wall of the inner chamber, it makes maintenance even easier.
- The film-forming device of the present invention is not limited to the above preferred embodiments. Various modifications and changes can be made to the structure and the like of the film-forming device without departing from the gist of the present invention.
- In the film-forming device of the present invention, preferably, the inner chamber and the outer chamber are separately movable horizontally. For example, the inner chamber and the outer chamber may move horizontally together, or only the inner chamber may move horizontally.
- In the film-forming device of the present invention, when the chamber is horizontally pivotable, preferably, the inner chamber and the outer chamber are separately pivotable horizontally. For example, the inner chamber and the outer chamber may pivot horizontally together, or only the inner chamber may pivot horizontally.
-
-
- 1 film-forming device
- 10 chamber
- 11 inner chamber
- 11 a first lid of inner chamber
- 11 b second lid of inner chamber
- 11 c chamber body of inner chamber
- 12 outer chamber
- 12 a first lid of outer chamber
- 12 b second lid of outer chamber
- 12 c chamber body of outer chamber
- 13 guide
- 20 workpiece holder
- 20 a, 20 b support plate
- 20 c 1, 20 c 2, 20 c 3, 20 c 4 support post
- 25 groove
- 30, 30 a, 30 b, 30 c 1, 30 c 2 heater
- 35 heater wire
- 40 gas supply pipe group
- 50 exhaust pipe
- 60 rotation mechanism
- W workpiece
Claims (12)
Applications Claiming Priority (3)
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JP2017-246512 | 2017-12-22 | ||
JP2017246512 | 2017-12-22 | ||
PCT/JP2018/044922 WO2019124098A1 (en) | 2017-12-22 | 2018-12-06 | Film-forming device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2018/044922 Continuation WO2019124098A1 (en) | 2017-12-22 | 2018-12-06 | Film-forming device |
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US20200308700A1 true US20200308700A1 (en) | 2020-10-01 |
US11891692B2 US11891692B2 (en) | 2024-02-06 |
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US16/901,566 Active 2040-03-11 US11891692B2 (en) | 2017-12-22 | 2020-06-15 | Film-forming device |
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JP (2) | JP6988916B2 (en) |
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US11377731B2 (en) * | 2017-12-22 | 2022-07-05 | Murata Manufacturing Co., Ltd. | Film-forming device |
CN115323358A (en) * | 2021-05-10 | 2022-11-11 | 皮考逊公司 | Substrate processing apparatus and method |
US11891692B2 (en) | 2017-12-22 | 2024-02-06 | Murata Manufacturing Co., Ltd. | Film-forming device |
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US11891692B2 (en) | 2024-02-06 |
JP7184145B2 (en) | 2022-12-06 |
CN111433390A (en) | 2020-07-17 |
WO2019124098A1 (en) | 2019-06-27 |
JP2022033870A (en) | 2022-03-02 |
CN111433390B (en) | 2022-09-27 |
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