US20180005893A1 - Methods for forming mask layers using a flowable carbon-containing silicon dioxide material - Google Patents
Methods for forming mask layers using a flowable carbon-containing silicon dioxide material Download PDFInfo
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- US20180005893A1 US20180005893A1 US15/703,601 US201715703601A US2018005893A1 US 20180005893 A1 US20180005893 A1 US 20180005893A1 US 201715703601 A US201715703601 A US 201715703601A US 2018005893 A1 US2018005893 A1 US 2018005893A1
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- layer
- silicon dioxide
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- containing silicon
- carbon
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- 238000000034 method Methods 0.000 title claims abstract description 113
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 47
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title description 26
- 230000009969 flowable effect Effects 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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Definitions
- the present disclosure generally relates to the fabrication of integrated circuits, and, more particularly, to various methods for forming mask layers using a flowable carbon-containing silicon dioxide material.
- Transistors come in a variety of shapes and forms, e.g., planar transistors, FinFET transistors, nanowire devices, etc.
- the transistors are typically either NMOS (NFET) or PMOS (PFET) type devices wherein the “N” and “P” designation is based upon the type of dopants used to create the source/drain regions of the devices.
- CMOS Complementary Metal Oxide Semiconductor
- CMOS Complementary Metal Oxide Semiconductor
- each device comprises drain and source regions and a gate electrode structure positioned above and between the source/drain regions.
- a gate electrode structure positioned above and between the source/drain regions.
- a conductive channel region forms between the drain region and the source region.
- FIG. 1 is a perspective view of an illustrative prior art FinFET semiconductor device 100 that is formed above a semiconductor substrate 105 at an intermediate point during fabrication.
- the FinFET device 100 includes three illustrative fins 110 , an isolation material 130 (e.g., silicon dioxide, a low-k material or an ultra-low-k material), a gate structure 115 , sidewall spacers 120 (e.g., silicon nitride) and a gate cap layer 125 (e.g., silicon nitride).
- an isolation material 130 e.g., silicon dioxide, a low-k material or an ultra-low-k material
- sidewall spacers 120 e.g., silicon nitride
- a gate cap layer 125 e.g., silicon nitride
- the fins 110 have a three-dimensional configuration: a height, a width and an axial length.
- the portions of the fins 110 covered by the gate structure 115 are the channel regions of the FinFET device 100 , while the portions of the fins 110 positioned laterally outside of the spacers 120 are part of the source/drain regions of the device 100 .
- the portions of the fins 110 in the source/drain regions may have additional epi semiconductor material formed thereon in either a merged or unmerged condition.
- fins are formed in a regular array.
- the critical dimensions (CD) of the fins in the array are determined by the photolithography process employed in patterning the fins.
- Various techniques may be employed to achieve feature sizes that are smaller than the resolution limit of current photolithography processes.
- Techniques known in the art include double exposure, double patterning, spacer double patterning, self-aligned double patterning and self-aligned quadruple patterning. Due to their process complexities and material limitations, such processes present many challenges with respect to dimensional control, including CD erosion and pitch walking (i.e., non-uniformities in fin pitch and periodicity across the array).
- Another problem area with semiconductor device fabrication in the deep sub-micron range is the patterning of interconnect features for the devices.
- the size of the individual circuit elements is significantly reduced, thereby improving, for example, the switching speed of the transistor elements, the available floor space for interconnect lines electrically connecting the individual circuit elements is also decreased. Consequently, the dimensions of these interconnect lines and the spaces between the metal lines have to be reduced to compensate for a reduced amount of available floor space and for an increased number of circuit elements provided per unit area.
- the present disclosure is directed to various methods and resulting devices that may avoid, or at least reduce, the effects of one or more of the problems identified above.
- One illustrative method includes, among other things, forming a process layer on a substrate.
- a patterned mask layer is formed above the process layer.
- the patterned mask layer includes first openings exposing portions of the process layer.
- a carbon-containing silicon dioxide layer is formed above the patterned mask layer and in the first openings.
- the carbon-containing silicon dioxide layer is planarized to remove portions extending outside the first openings and generate a plurality of mask elements from remaining portions of the carbon-containing silicon dioxide layer.
- the patterned mask layer is removed.
- the process layer is etched using the mask elements as an etch mask.
- Another illustrative method includes, among other things, forming a patterned mask layer above a semiconductor layer.
- the patterned mask layer includes first openings exposing portions of the semiconductor layer.
- a carbon-containing silicon dioxide layer is formed above the patterned mask layer and in the first openings.
- the carbon-containing silicon dioxide layer is planarized to remove portions extending outside the first openings and generate a plurality of mask elements from remaining portions of the carbon-containing silicon dioxide layer.
- the patterned mask layer is removed.
- the semiconductor layer is etched using the mask elements as an etch mask to define a plurality of fins in the semiconductor layer.
- FIG. 1 is a perspective view of one illustrative embodiment of a prior art semiconductor product
- FIGS. 2A-2H depict one illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material
- FIGS. 3A-3F depict another illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material.
- the present disclosure generally relates to various methods of forming mask layers using a flowable carbon-containing silicon dioxide material.
- the present method is applicable to a variety of devices, including, but not limited to, logic devices, memory devices, etc., and the methods disclosed herein may be employed to form N-type or P-type semiconductor devices.
- the methods and devices disclosed herein may be employed in manufacturing products using a variety of technologies, e.g., NMOS, PMOS, CMOS, etc., and they may be employed in manufacturing a variety of different devices, e.g., memory devices, logic devices, ASICs, etc.
- the inventions disclosed herein may be employed in forming integrated circuit products using a variety of so-called 3D devices, such as FinFETs.
- FIGS. 2A-2H depict one illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material for patterning an integrated circuit device product 200 defined on a semiconductor substrate 205 .
- the illustrative product 200 shown in FIG. 2A includes a process layer 210 formed on the substrate 205 .
- the process layer 210 may be part of the substrate 205 , such as an active region layer.
- the process layer 210 may be a material different than the substrate 205 , such as a dielectric layer (e.g., silicon dioxide, a low-k dielectric material, etc.).
- a dielectric layer e.g., silicon dioxide, a low-k dielectric material, etc.
- the substrate 205 may have a variety of configurations, such as the depicted bulk silicon configuration.
- the substrate 205 may also have a silicon-on-insulator (SOI) configuration that includes a bulk silicon layer, a buried insulation layer and an active layer, wherein semiconductor devices are formed in and above the active layer.
- SOI silicon-on-insulator
- the substrate 205 may be formed of silicon or silicon germanium or it may be made of materials other than silicon, such as germanium.
- the terms “substrate” or “semiconductor substrate” should be understood to cover all semiconducting materials and all forms of such materials.
- the substrate 205 may have different layers.
- FIG. 2B illustrates the product 200 after a deposition process was performed to form a carbon-containing silicon dioxide layer 215 above the process layer 210 .
- the carbon-containing silicon dioxide layer 215 may be formed by providing octamethylcyclotetrasiloxane (OMCTS) and tetramethoxysilane (TMOS) precursors at a temperature up to about 100° C. to deposit the layer and then performing a cure treatment at a temperature between about 300° C. and 500° C. for between about 2 minutes and 10 minutes.
- the carbon-containing silicon dioxide layer 215 may be SiOC or SiOCN.
- FIG. 2C illustrates the product 200 after a plurality of processes was performed.
- a first deposition process was performed to form a hard mask layer 220 (e.g., silicon dioxide, silicon nitride, silicon) above the carbon-containing silicon dioxide layer 215 .
- a second deposition process was performed to form a resist layer 225 above the hard mask layer 220 .
- a patterning process (e.g., lithography process) was performed to pattern the resist layer 225 to define openings 230 .
- the openings 230 may be line type openings, via openings, block openings, etc. The pitch and width of the openings 230 may be consistent or they may vary.
- the openings 230 expose portions of the underlying hard mask layer 220 .
- FIG. 2D illustrates the product 200 after an etch process (e.g., oxygen reactive ion etch) was performed to define openings 235 in the hard mask layer 220 corresponding to the openings 230 in the resist layer 225 .
- the openings 235 expose portions of the underlying carbon-containing silicon dioxide layer 215 .
- FIG. 2E illustrates the product 200 after a material modification process 240 was performed to modify the exposed portions of the carbon-containing silicon dioxide layer 215 .
- the material modification process 240 may be an ashing process, where a plasma is generated in a process ambient.
- the plasma is generated in a process ambient including oxygen (e.g., 1 k-4 k sccm) and nitrogen (e.g., 100-500 sccm) using an unbiased power source (e.g., 4 kW-6 kW) at a pressure of about 400-1000 mtorr for about 30 seconds.
- Modified portions 245 of the carbon-containing silicon dioxide layer 215 exhibit a significantly higher wet etch rate as compared to the unmodified portions.
- the wet etch rate in a diluted hydrofluoric acid (100:1) solution is increased from about 0.0014 A/min to over approximately 500 A/min.
- the etch rate in other etch solutions e.g., NH 4 OH:H 2 O 2 :H 2 O (SC 1 ), hot phosphoric acid (HPO)
- SC 1 NH 4 OH:H 2 O 2 :H 2 O
- HPO hot phosphoric acid
- the material modification process 240 also removes the resist layer 225 .
- FIG. 2F illustrates the product 200 after a wet etch process (e.g., DHF) was performed to remove the modified portions 245 and the hard mask layer 220 selectively to the carbon-containing silicon dioxide layer 215 , thereby exposing portions of the underlying process layer 210 through openings 250 .
- a wet etch process e.g., DHF
- FIG. 2G illustrates the product 200 after an etch process was performed to etch the process layer 210 .
- the etch process may define recesses 255 , 260 in the process layer 210 .
- the recess 255 may be a via recess for forming a plug-type contact to an underlying conductive structure (not shown)
- the recess 260 may be a trench recess for forming a conductive line embedded in the process layer 210 .
- the remaining portions of the carbon-containing silicon dioxide layer 215 may be removed.
- FIG. 2H illustrates an alternative embodiment of the product 200 of FIG. 2F after an etch process was performed to etch the process layer 210 .
- the process layer 210 may be silicon, a conductive material, a sacrificial material, etc.
- Raised features 265 may be defined in the process layer 210 (e.g., lines or blocks).
- sacrificial gate electrode or contact features may be defined in an amorphous silicon process layer 210 , and subsequently replaced with metal features later in the process flow.
- the raised features 265 may be fins defined in a silicon or silicon alloy process layer 210 .
- FIGS. 3A-3F depict another illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material for patterning an integrated circuit device product 300 defined on a semiconductor substrate 305 .
- the illustrative product 300 shown in FIG. 3A includes a process layer 310 formed on the substrate 305 .
- the process layer 310 may be part of the substrate 305 , such as an active region layer.
- a deposition process was performed to form a hard mask layer 315 (e.g., silicon dioxide, silicon nitride, silicon) above the process layer 310 .
- a second deposition process was performed to form a resist layer 320 above the hard mask layer 310 .
- a patterning process (e.g., lithography process) was performed to pattern the resist layer 320 to define openings 325 .
- the openings 325 may be line type openings, via openings, block openings, etc.
- the pitch and width of the openings 325 may be consistent or they may vary.
- FIG. 3B illustrates the product 300 after an etch process (e.g., oxygen reactive ion etch) was performed to define openings 330 in the hard mask layer 315 corresponding to the openings 325 in the resist layer 320 .
- the openings 330 expose portions of the underlying process layer 310 .
- FIG. 3C illustrates the product 300 after a plurality of processes was performed.
- An ashing process was performed to remove the resist layer 320 .
- a deposition process was performed to form a carbon-containing silicon dioxide layer 335 above the hard mask layer 315 and in the openings 330 .
- the carbon-containing silicon dioxide layer 335 may be SiOC or SiOCN.
- FIG. 3D illustrates the product 300 after a planarization process was performed to remove portions of the carbon-containing silicon dioxide layer 335 disposed above the hard mask layer 315 and outside the openings 330 .
- FIG. 3E illustrates the product 300 after an etch process was performed to remove the hard mask layer 315 , thereby leaving patterned mask elements 340 from the remaining portions of the carbon-containing silicon dioxide layer 335 .
- the mask elements 340 may be line features, plug features (e.g., with elliptical or rectangular cross sections), etc. In general, the mask elements 340 may be seen as pillars. In the embodiment illustrated in FIG. 3E , the mask elements 340 are line type elements, with axial lengths extending into the page. Although the mask elements 340 are illustrated as having uniform pitch and CD, in some embodiments, these parameters may vary.
- FIG. 3F illustrates the product 300 after an etch process was performed to etch the process layer 310 to transfer the pattern defined by the mask elements 340 to the process layer 310 .
- the process layer 310 may be silicon, a conductive material, a sacrificial material, etc.
- Raised features 345 such as lines, blocks or pillars, may be defined in the process layer 310 .
- fins, sacrificial gate electrodes, contact features, etc. may be defined in the process layer 310 .
- the mask elements 340 may be removed, while in other embodiments, the mask elements 340 may serve as cap layers above the raised features 345 .
- the mask elements 340 may define a template for etching recesses or trenches in the process layer 310 .
- the use of a carbon-containing silicon dioxide material to form mask elements has numerous advantages.
- the carbon-containing silicon dioxide material provides significant etch selectivity characteristics for wet and dry etch processes.
- the flowable nature of the carbon-containing silicon dioxide material when it is deposited provides gap fill capabilities so that the mask elements can be formed by filling in gaps defined in a layer and planarizing the material.
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Abstract
Description
- The present disclosure generally relates to the fabrication of integrated circuits, and, more particularly, to various methods for forming mask layers using a flowable carbon-containing silicon dioxide material.
- In modern integrated circuits, such as microprocessors, storage devices and the like, a very large number of circuit elements, especially transistors, are provided on a restricted chip area. Transistors come in a variety of shapes and forms, e.g., planar transistors, FinFET transistors, nanowire devices, etc. The transistors are typically either NMOS (NFET) or PMOS (PFET) type devices wherein the “N” and “P” designation is based upon the type of dopants used to create the source/drain regions of the devices. So-called CMOS (Comple-mentary Metal Oxide Semiconductor) technology or products refers to integrated circuit products that are manufactured using both NMOS and PMOS transistor devices. Irrespective of the physical configuration of the transistor device, each device comprises drain and source regions and a gate electrode structure positioned above and between the source/drain regions. Upon application of an appropriate control voltage to the gate electrode, a conductive channel region forms between the drain region and the source region.
- In some applications, fins for FinFET devices are formed such that the fin is vertically spaced apart from and above the substrate, with an isolation material positioned between the fin and the substrate.
FIG. 1 is a perspective view of an illustrative prior artFinFET semiconductor device 100 that is formed above asemiconductor substrate 105 at an intermediate point during fabrication. In this example, the FinFETdevice 100 includes threeillustrative fins 110, an isolation material 130 (e.g., silicon dioxide, a low-k material or an ultra-low-k material), agate structure 115, sidewall spacers 120 (e.g., silicon nitride) and a gate cap layer 125 (e.g., silicon nitride). Thefins 110 have a three-dimensional configuration: a height, a width and an axial length. The portions of thefins 110 covered by thegate structure 115 are the channel regions of theFinFET device 100, while the portions of thefins 110 positioned laterally outside of thespacers 120 are part of the source/drain regions of thedevice 100. Although not depicted, the portions of thefins 110 in the source/drain regions may have additional epi semiconductor material formed thereon in either a merged or unmerged condition. - Typically, fins are formed in a regular array. The critical dimensions (CD) of the fins in the array are determined by the photolithography process employed in patterning the fins. Various techniques may be employed to achieve feature sizes that are smaller than the resolution limit of current photolithography processes. Techniques known in the art include double exposure, double patterning, spacer double patterning, self-aligned double patterning and self-aligned quadruple patterning. Due to their process complexities and material limitations, such processes present many challenges with respect to dimensional control, including CD erosion and pitch walking (i.e., non-uniformities in fin pitch and periodicity across the array).
- Another problem area with semiconductor device fabrication in the deep sub-micron range is the patterning of interconnect features for the devices. As the size of the individual circuit elements is significantly reduced, thereby improving, for example, the switching speed of the transistor elements, the available floor space for interconnect lines electrically connecting the individual circuit elements is also decreased. Consequently, the dimensions of these interconnect lines and the spaces between the metal lines have to be reduced to compensate for a reduced amount of available floor space and for an increased number of circuit elements provided per unit area.
- The present disclosure is directed to various methods and resulting devices that may avoid, or at least reduce, the effects of one or more of the problems identified above.
- The following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an exhaustive overview of the invention. It is not intended to identify key or critical elements of the invention or to delineate the scope of the invention. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
- Generally, the present disclosure is directed to various methods of forming mask layers using a flowable carbon-containing silicon dioxide material. One illustrative method includes, among other things, forming a process layer on a substrate. A patterned mask layer is formed above the process layer. The patterned mask layer includes first openings exposing portions of the process layer. A carbon-containing silicon dioxide layer is formed above the patterned mask layer and in the first openings. The carbon-containing silicon dioxide layer is planarized to remove portions extending outside the first openings and generate a plurality of mask elements from remaining portions of the carbon-containing silicon dioxide layer. The patterned mask layer is removed. The process layer is etched using the mask elements as an etch mask.
- Another illustrative method includes, among other things, forming a patterned mask layer above a semiconductor layer. The patterned mask layer includes first openings exposing portions of the semiconductor layer. A carbon-containing silicon dioxide layer is formed above the patterned mask layer and in the first openings. The carbon-containing silicon dioxide layer is planarized to remove portions extending outside the first openings and generate a plurality of mask elements from remaining portions of the carbon-containing silicon dioxide layer. The patterned mask layer is removed. The semiconductor layer is etched using the mask elements as an etch mask to define a plurality of fins in the semiconductor layer.
- The disclosure may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
-
FIG. 1 is a perspective view of one illustrative embodiment of a prior art semiconductor product; -
FIGS. 2A-2H depict one illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material; and -
FIGS. 3A-3F depict another illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material. - While the subject matter disclosed herein is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
- Various illustrative embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
- The present subject matter will now be described with reference to the attached figures. Various structures, systems and devices are schematically depicted in the drawings for purposes of explanation only and so as to not obscure the present disclosure with details that are well known to those skilled in the art. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present disclosure. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the understanding of those words and phrases by those skilled in the relevant art. No special definition of a term or phrase, i.e., a definition that is different from the ordinary and customary meaning as understood by those skilled in the art, is intended to be implied by consistent usage of the term or phrase herein. To the extent that a term or phrase is intended to have a special meaning, i.e., a meaning other than that understood by skilled artisans, such a special definition will be expressly set forth in the specification in a definitional manner that directly and unequivocally provides the special definition for the term or phrase.
- The present disclosure generally relates to various methods of forming mask layers using a flowable carbon-containing silicon dioxide material. Moreover, as will be readily apparent to those skilled in the art upon a complete reading of the present application, the present method is applicable to a variety of devices, including, but not limited to, logic devices, memory devices, etc., and the methods disclosed herein may be employed to form N-type or P-type semiconductor devices. The methods and devices disclosed herein may be employed in manufacturing products using a variety of technologies, e.g., NMOS, PMOS, CMOS, etc., and they may be employed in manufacturing a variety of different devices, e.g., memory devices, logic devices, ASICs, etc. As will be appreciated by those skilled in the art after a complete reading of the present application, the inventions disclosed herein may be employed in forming integrated circuit products using a variety of so-called 3D devices, such as FinFETs.
- The inventions disclosed herein should not be considered to be limited to the illustrative examples depicted and described herein. With reference to the attached figures, various illustrative embodiments of the methods and devices disclosed herein will now be described in more detail.
-
FIGS. 2A-2H depict one illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material for patterning an integratedcircuit device product 200 defined on asemiconductor substrate 205. Theillustrative product 200 shown inFIG. 2A includes aprocess layer 210 formed on thesubstrate 205. In some embodiments, theprocess layer 210 may be part of thesubstrate 205, such as an active region layer. In other embodiments, theprocess layer 210 may be a material different than thesubstrate 205, such as a dielectric layer (e.g., silicon dioxide, a low-k dielectric material, etc.). Additional layers may be present between theprocess layer 210 and thesubstrate 205, such as device layers in which functional devices, such as transistors, are formed, or metallization layers for forming interconnect structures. Thesubstrate 205 may have a variety of configurations, such as the depicted bulk silicon configuration. Thesubstrate 205 may also have a silicon-on-insulator (SOI) configuration that includes a bulk silicon layer, a buried insulation layer and an active layer, wherein semiconductor devices are formed in and above the active layer. Thesubstrate 205 may be formed of silicon or silicon germanium or it may be made of materials other than silicon, such as germanium. Thus, the terms “substrate” or “semiconductor substrate” should be understood to cover all semiconducting materials and all forms of such materials. Thesubstrate 205 may have different layers. -
FIG. 2B illustrates theproduct 200 after a deposition process was performed to form a carbon-containingsilicon dioxide layer 215 above theprocess layer 210. In one embodiment, the carbon-containingsilicon dioxide layer 215 may be formed by providing octamethylcyclotetrasiloxane (OMCTS) and tetramethoxysilane (TMOS) precursors at a temperature up to about 100° C. to deposit the layer and then performing a cure treatment at a temperature between about 300° C. and 500° C. for between about 2 minutes and 10 minutes. In one embodiment, the carbon-containingsilicon dioxide layer 215 may be SiOC or SiOCN. -
FIG. 2C illustrates theproduct 200 after a plurality of processes was performed. A first deposition process was performed to form a hard mask layer 220 (e.g., silicon dioxide, silicon nitride, silicon) above the carbon-containingsilicon dioxide layer 215. A second deposition process was performed to form a resistlayer 225 above thehard mask layer 220. A patterning process (e.g., lithography process) was performed to pattern the resistlayer 225 to defineopenings 230. Theopenings 230 may be line type openings, via openings, block openings, etc. The pitch and width of theopenings 230 may be consistent or they may vary. Theopenings 230 expose portions of the underlyinghard mask layer 220. -
FIG. 2D illustrates theproduct 200 after an etch process (e.g., oxygen reactive ion etch) was performed to defineopenings 235 in thehard mask layer 220 corresponding to theopenings 230 in the resistlayer 225. Theopenings 235 expose portions of the underlying carbon-containingsilicon dioxide layer 215. -
FIG. 2E illustrates theproduct 200 after amaterial modification process 240 was performed to modify the exposed portions of the carbon-containingsilicon dioxide layer 215. In one embodiment, thematerial modification process 240 may be an ashing process, where a plasma is generated in a process ambient. In one embodiment, the plasma is generated in a process ambient including oxygen (e.g., 1 k-4 k sccm) and nitrogen (e.g., 100-500 sccm) using an unbiased power source (e.g., 4 kW-6 kW) at a pressure of about 400-1000 mtorr for about 30 seconds.Modified portions 245 of the carbon-containingsilicon dioxide layer 215 exhibit a significantly higher wet etch rate as compared to the unmodified portions. For example, the wet etch rate in a diluted hydrofluoric acid (100:1) solution is increased from about 0.0014 A/min to over approximately 500 A/min. The etch rate in other etch solutions (e.g., NH4OH:H2O2:H2O (SC1), hot phosphoric acid (HPO)) is also increased, but by a lesser degree. Thematerial modification process 240 also removes the resistlayer 225. -
FIG. 2F illustrates theproduct 200 after a wet etch process (e.g., DHF) was performed to remove the modifiedportions 245 and thehard mask layer 220 selectively to the carbon-containingsilicon dioxide layer 215, thereby exposing portions of theunderlying process layer 210 throughopenings 250. -
FIG. 2G illustrates theproduct 200 after an etch process was performed to etch theprocess layer 210. In an embodiment where theprocess layer 210 is a dielectric layer, the etch process may definerecesses process layer 210. For example, therecess 255 may be a via recess for forming a plug-type contact to an underlying conductive structure (not shown), and therecess 260 may be a trench recess for forming a conductive line embedded in theprocess layer 210. In some embodiments, the remaining portions of the carbon-containingsilicon dioxide layer 215 may be removed. -
FIG. 2H illustrates an alternative embodiment of theproduct 200 ofFIG. 2F after an etch process was performed to etch theprocess layer 210. In the alternative embodiment theprocess layer 210 may be silicon, a conductive material, a sacrificial material, etc. Raised features 265 may be defined in the process layer 210 (e.g., lines or blocks). For example, sacrificial gate electrode or contact features may be defined in an amorphoussilicon process layer 210, and subsequently replaced with metal features later in the process flow. In some embodiments, the raised features 265 may be fins defined in a silicon or siliconalloy process layer 210. -
FIGS. 3A-3F depict another illustrative method disclosed for forming mask layers using a flowable carbon-containing silicon dioxide material for patterning an integratedcircuit device product 300 defined on asemiconductor substrate 305. Theillustrative product 300 shown inFIG. 3A includes aprocess layer 310 formed on thesubstrate 305. In some embodiments, theprocess layer 310 may be part of thesubstrate 305, such as an active region layer. A deposition process was performed to form a hard mask layer 315 (e.g., silicon dioxide, silicon nitride, silicon) above theprocess layer 310. A second deposition process was performed to form a resistlayer 320 above thehard mask layer 310. A patterning process (e.g., lithography process) was performed to pattern the resistlayer 320 to defineopenings 325. Theopenings 325 may be line type openings, via openings, block openings, etc. The pitch and width of theopenings 325 may be consistent or they may vary. -
FIG. 3B illustrates theproduct 300 after an etch process (e.g., oxygen reactive ion etch) was performed to defineopenings 330 in thehard mask layer 315 corresponding to theopenings 325 in the resistlayer 320. Theopenings 330 expose portions of theunderlying process layer 310. -
FIG. 3C illustrates theproduct 300 after a plurality of processes was performed. An ashing process was performed to remove the resistlayer 320. A deposition process was performed to form a carbon-containingsilicon dioxide layer 335 above thehard mask layer 315 and in theopenings 330. In one embodiment, the carbon-containingsilicon dioxide layer 335 may be SiOC or SiOCN. -
FIG. 3D illustrates theproduct 300 after a planarization process was performed to remove portions of the carbon-containingsilicon dioxide layer 335 disposed above thehard mask layer 315 and outside theopenings 330. -
FIG. 3E illustrates theproduct 300 after an etch process was performed to remove thehard mask layer 315, thereby leaving patternedmask elements 340 from the remaining portions of the carbon-containingsilicon dioxide layer 335. Themask elements 340 may be line features, plug features (e.g., with elliptical or rectangular cross sections), etc. In general, themask elements 340 may be seen as pillars. In the embodiment illustrated inFIG. 3E , themask elements 340 are line type elements, with axial lengths extending into the page. Although themask elements 340 are illustrated as having uniform pitch and CD, in some embodiments, these parameters may vary. -
FIG. 3F illustrates theproduct 300 after an etch process was performed to etch theprocess layer 310 to transfer the pattern defined by themask elements 340 to theprocess layer 310. In the alternative embodiment, theprocess layer 310 may be silicon, a conductive material, a sacrificial material, etc. Raised features 345, such as lines, blocks or pillars, may be defined in theprocess layer 310. For example, fins, sacrificial gate electrodes, contact features, etc. may be defined in theprocess layer 310. In some embodiments, themask elements 340 may be removed, while in other embodiments, themask elements 340 may serve as cap layers above the raised features 345. In one embodiment, where theprocess layer 310 is a dielectric layer, themask elements 340 may define a template for etching recesses or trenches in theprocess layer 310. - The use of a carbon-containing silicon dioxide material to form mask elements has numerous advantages. The carbon-containing silicon dioxide material provides significant etch selectivity characteristics for wet and dry etch processes. The flowable nature of the carbon-containing silicon dioxide material when it is deposited provides gap fill capabilities so that the mask elements can be formed by filling in gaps defined in a layer and planarizing the material. These advantages have the propensity to reduce problems associated with erosion or pitch walking.
- The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. For example, the process steps set forth above may be performed in a different order. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Note that the use of terms, such as “first,” “second,” “third” or “fourth” to describe various processes or structures in this specification and in the attached claims is only used as a shorthand reference to such steps/structures and does not necessarily imply that such steps/structures are performed/formed in that ordered sequence. Of course, depending upon the exact claim language, an ordered sequence of such processes may or may not be required. Accordingly, the protection sought herein is as set forth in the claims below.
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US15/175,187 Expired - Fee Related US9793169B1 (en) | 2016-06-07 | 2016-06-07 | Methods for forming mask layers using a flowable carbon-containing silicon dioxide material |
US15/703,601 Abandoned US20180005893A1 (en) | 2016-06-07 | 2017-09-13 | Methods for forming mask layers using a flowable carbon-containing silicon dioxide material |
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CN112216606A (en) * | 2019-07-10 | 2021-01-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
CN112864012A (en) * | 2019-11-27 | 2021-05-28 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
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US6500773B1 (en) * | 2000-11-27 | 2002-12-31 | Applied Materials, Inc. | Method of depositing organosilicate layers |
US20060063387A1 (en) * | 2004-09-21 | 2006-03-23 | Molecular Imprints, Inc. | Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy |
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US20140327117A1 (en) * | 2013-05-03 | 2014-11-06 | Applied Materials, Inc. | Optically tuned hardmask for multi-patterning applications |
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JP2004055781A (en) * | 2002-07-19 | 2004-02-19 | Sony Corp | Method for manufacturing semiconductor device |
JP3778174B2 (en) * | 2003-04-14 | 2006-05-24 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
JP2006165214A (en) * | 2004-12-07 | 2006-06-22 | Sony Corp | Semiconductor device and its fabrication process |
US8536064B2 (en) * | 2010-02-08 | 2013-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double patterning strategy for contact hole and trench in photolithography |
KR20120026313A (en) * | 2010-09-09 | 2012-03-19 | 삼성전자주식회사 | Non-volatile memory device and method of fabricating the same |
US9564367B2 (en) | 2012-09-13 | 2017-02-07 | Globalfoundries Inc. | Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices |
WO2014203303A1 (en) | 2013-06-17 | 2014-12-24 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Semiconductor device manufacturing method and semiconductor device |
US9391141B2 (en) * | 2014-02-24 | 2016-07-12 | Imec Vzw | Method for producing fin structures of a semiconductor device in a substrate |
CN105448917B (en) | 2014-09-01 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
CN105719969B (en) | 2014-12-04 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | The forming method of fin field effect pipe |
EP3035379B1 (en) * | 2014-12-15 | 2020-07-01 | IMEC vzw | Method for blocking a trench portion |
JP2016178222A (en) * | 2015-03-20 | 2016-10-06 | ルネサスエレクトロニクス株式会社 | Method of manufacturing semiconductor device |
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- 2016-06-07 US US15/175,187 patent/US9793169B1/en not_active Expired - Fee Related
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- 2017-09-13 US US15/703,601 patent/US20180005893A1/en not_active Abandoned
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US6500773B1 (en) * | 2000-11-27 | 2002-12-31 | Applied Materials, Inc. | Method of depositing organosilicate layers |
US20060063387A1 (en) * | 2004-09-21 | 2006-03-23 | Molecular Imprints, Inc. | Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy |
US20100015799A1 (en) * | 2006-07-20 | 2010-01-21 | Tokyo Electron Limited | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium |
US20130078778A1 (en) * | 2011-09-23 | 2013-03-28 | United Microelectronics Corp. | Semiconductor process |
US20140327117A1 (en) * | 2013-05-03 | 2014-11-06 | Applied Materials, Inc. | Optically tuned hardmask for multi-patterning applications |
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