US20170351360A1 - Electrostatic capacitance input device and electro-optical device having input device - Google Patents

Electrostatic capacitance input device and electro-optical device having input device Download PDF

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Publication number
US20170351360A1
US20170351360A1 US15/684,447 US201715684447A US2017351360A1 US 20170351360 A1 US20170351360 A1 US 20170351360A1 US 201715684447 A US201715684447 A US 201715684447A US 2017351360 A1 US2017351360 A1 US 2017351360A1
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input
substrate
region
wires
electrostatic capacitance
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US15/684,447
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Takeshi Kurashima
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Japan Display Inc
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Japan Display Inc
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Priority to JP2009173984A priority Critical patent/JP5300640B2/en
Priority to JP2009-173984 priority
Priority to US12/839,790 priority patent/US8482301B2/en
Priority to US13/916,220 priority patent/US8836346B2/en
Priority to US14/457,795 priority patent/US20140347580A1/en
Priority to US14/856,211 priority patent/US9778805B2/en
Priority to US15/684,447 priority patent/US20170351360A1/en
Application filed by Japan Display Inc filed Critical Japan Display Inc
Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KURASHIMA, TAKASHI
Assigned to Japan Display West Inc. reassignment Japan Display West Inc. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SONY CORPORATION
Assigned to JAPAN DISPLAY INC. reassignment JAPAN DISPLAY INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: Japan Display West Inc.
Publication of US20170351360A1 publication Critical patent/US20170351360A1/en
Assigned to SONY CORPORATION reassignment SONY CORPORATION CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING OF THE INVENTOR'S FIRST NAME FROM TAKASHI TO TAKESHI PREVIOUSLY RECORDED ON REEL 043880 FRAME 0156. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: KURASHIMA, TAKESHI
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    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Abstract

Disclosed herein is an electrostatic capacitance input device including: an input region of a substrate, in which a plurality of input position detection electrodes are provided; a plurality of wires that are electrically connected to the plurality of input position detection electrodes and extend outside the input region of the substrate; and a shield electrode that overlaps the wires on the input operation side.

Description

    CROSS REFERENCES TO RELATED APPLICATIONS
  • The present application is a continuation of U.S. application Ser. No. 14/856,211, filed on Sep. 16, 2015, which application is a continuation of U.S. application Ser. No. 14/457,795, filed on Aug. 12, 2014, which application is a continuation of U.S. application Ser. No. 13/916,220, filed on Jun. 12, 2013, issued as U.S. Pat. No. 8,836,346 on Sep. 16, 2014, which application is a continuation of U.S. application Ser. No. 12/839,790, filed on Jul. 20, 2010, issued as U.S. Pat. No. 8,482,301 on Jul. 9, 2013, which claims priority to Japanese Priority Patent Application JP 2009-173984 filed in the Japan Patent Office on Jul. 27, 2009, the entire content of which is hereby incorporated by reference.
  • BACKGROUND
  • The present application relates to an electrostatic capacitance input device for detecting an input position based on the change in electrostatic capacitance connected to input position detection electrodes and an electro-optical device equipped with an input device having the electrostatic capacitance input device.
  • Some of electronic equipment such as mobile phones, car navigators, personal computers, ticket vendors and bank terminals incorporate an input device called a touch panel, for example, on the surface of a liquid crystal device so that one can enter information as one views an image displayed on an image display region of the liquid crystal device. An electrostatic capacitance input device is among such types of input devices and monitors the electrostatic capacitance connected to each of a plurality of input position detection electrodes. Therefore, when a finger approaches one of the plurality of input position detection electrodes, the electrostatic capacitance connected to the electrode in question increases by the amount of electrostatic capacitance formed between the electrode and finger, thus allowing for the electrode in question to be identified.
  • Such an electrostatic capacitance input device is susceptible to electromagnetic noise because it detects the changes in capacitance coupled to the input position detection electrodes. For this reason, it has been proposed to provide a shield electrode over the entire surface of the side opposite to the input operation side of the electrostatic capacitance input device (see JP-T-2003-511799, hereinafter referred to as Patent Document 1).
  • SUMMARY
  • However, the shield structure described in Patent Document 1 has a problem in that it cannot shut out electromagnetic noise trying to find its way into the electrostatic capacitance input device from the input operation side.
  • In light of the foregoing, it is desirable to provide an electrostatic capacitance input device and an electro-optical device equipped with an input device having the electrostatic capacitance input device that are more immune to electromagnetic noise trying to find its way into the electrostatic capacitance input device from the input operation side.
  • In order to solve the above problem, an electrostatic capacitance input device according to an embodiment of the present application is characterized in that it includes an input region, a plurality of wires and a shield electrode. A plurality of input position detection electrodes are provided in the input region of a substrate. The plurality of wires are electrically connected to the plurality of input position detection electrodes and extend outside the input region of the substrate. The shield electrode overlaps the wires on the input operation side.
  • The present application breaks away from the existing idea that a shield electrode cannot be provided on the input operation side of an electrostatic capacitance input device. Therefore, a shield electrode is provided on the input operation side for wires provided outside the input region. This shuts out electromagnetic noise trying to find its way into the wires from the input operation side, thus ensuring immunity to electromagnetic waves trying to find their way from the input operation side. Therefore, the electrostatic capacitance input device according to an embodiment of the present application is unlikely to malfunction due to electromagnetic noise. No shield electrode is provided in the input region on the input operation side, thus posing no hindrance to input position detection based on electrostatic capacitance.
  • In the present application, the shield electrode should preferably be provided all along the outer periphery of the substrate. This configuration more positively shuts out electromagnetic waves from the input operation side.
  • In the present application, a first conductive film, interlayer insulating film and second conductive film should preferably be formed in this order from the substrate side on the substrate. Of the first and second conductive films, at least either of the two conductive films should preferably be used to form the input position detection electrodes. Of the first and second conductive films, the conductive film on the side opposite to the input operation side should preferably be used to form the wires. Of the first and second conductive films, the conductive film on the input operation side should preferably be used to form the shield electrode. This configuration permits formation of the shield electrode with the conductive film formed on the substrate, thus eliminating the need to provide a shield electrode externally.
  • In an embodiment, of the first and second conductive films, the conductive film on the side opposite to the input operation side should preferably be used to form a shielding auxiliary electrode on the outer periphery side of the wires on the substrate. The shielding auxiliary electrode and shield electrode should preferably overlap and be electrically connected together in the region free from the interlayer insulating film. This configuration provides substantially reduced resistance of the shield electrode. Further, this configuration suppresses electromagnetic noise from finding its way into the wires from the surrounding environment.
  • In an embodiment, the shielding auxiliary electrode should preferably be formed along all the sides of the substrate, and the shielding auxiliary electrode and shield electrode should preferably overlap and be electrically connected together all along the longitudinal direction of the shielding auxiliary electrode. This configuration provides substantially reduced resistance of the shield electrode. Further, this configuration more positively suppresses electromagnetic noise from finding its way into the wires from the surrounding environment.
  • In an embodiment, of the first and second conductive films, at least either of the two conductive films should preferably be used to provide first and second mounting terminals outside the input region of the substrate. The first mounting terminals should preferably be connected to the wires, and the second mounting terminals to the shield electrode. This configuration permits external application of a potential to the shield electrode, for example, via a flexible wiring board connected to the substrate as with the first mounting terminals, thus allowing for easy application of a potential to the shield electrode. Further, this configuration permits connection of a common flexible wiring board to the first and second mounting terminals.
  • In an embodiment, of the first and second conductive films, at least either of the two conductive films should preferably be used to provide, on the substrate, a plurality of first input position detection electrodes and a plurality of second input position detection electrodes as the input position detection electrodes. The first input position detection electrodes extend in a first direction in an in-plane direction of the substrate. The second input position detection electrodes extend in a second direction that intersects the first direction in the in-plane direction of the substrate. A junction portion, interruption portion and relay electrode should preferably be provided at each of the intersecting portions between the first and second input position detection electrodes. The junction portion allows for one of the first and second input position detection electrodes to be continuous and includes the one of the first and second conductive films. The interruption portion is a portion where the other of the first and second input position detection electrodes is interrupted. The relay electrode overlaps the junction portion via the interlayer insulating film to electrically connect the interruption portion of the other of the first and second input position detection electrodes. The relay electrode includes the other of the first and second conductive films.
  • In an embodiment, the first conductive film, interlayer insulating film and second conductive film can be formed on a substrate surface on the input operation side of the substrate. The wires can be formed with the first conductive film, and the shield electrode with the second conductive film.
  • In an embodiment, the first conductive film, interlayer insulating film and second conductive film may be formed on the surface of the substrate on the side opposite to the input operation side. The wires may be formed with the second conductive film, and the shield electrode with the first conductive film.
  • In an embodiment, a signal having the same waveform and phase as a position detection signal applied to the input position detection electrodes should preferably be applied to the shield electrode. This configuration ensures freedom from parasitic capacitance between the shield electrode and input position detection electrodes.
  • The electrostatic capacitance input device to which the present application is applied is used to make up an electro-optical device equipped with an input device. In the electro-optical device equipped with an input device, an electro-optical panel adapted to generate an image is formed on the side opposite to the input operation side with respect to the substrate.
  • The electro-optical device equipped with an input device to which the present application is applied is used, for example, for mobile phones, car navigators, personal computers, ticket vendors and bank terminals.
  • Additional features and advantages are described herein, and will be apparent from the following Detailed Description and the figures.
  • BRIEF DESCRIPTION OF THE FIGURES
  • FIGS. 1A to 1C are explanatory diagrams of an electrostatic capacitance input device of an embodiment;
  • FIGS. 2A and 2B are explanatory diagrams schematically illustrating the cross-sectional configuration of electro-optical device equipped with an input device of an embodiment;
  • FIGS. 3A to 3D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device according to embodiment 1;
  • FIG. 4 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of electrodes and other components formed on a substrate of the electrostatic capacitance input device according to embodiment 1;
  • FIGS. 5A to 5C are explanatory diagrams illustrating the cross-sectional configuration of the substrate of the electrostatic capacitance input device according to embodiment 1;
  • FIGS. 6A to 6C are explanatory diagrams illustrating the configuration of wires formed on the substrate of the electrostatic capacitance input device according to embodiment 1;
  • FIGS. 7A to 7D are explanatory diagrams schematically illustrating the two-dimensional configuration of an electrostatic capacitance input device according to embodiment 2;
  • FIG. 8 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate of the electrostatic capacitance input device according to embodiment 2;
  • FIGS. 9A to 9C are explanatory diagrams schematically illustrating the cross-sectional configuration of the substrate of the electrostatic capacitance input device according to embodiment 2;
  • FIGS. 10A to 10D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device according to embodiment 3;
  • FIG. 11 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate of the electrostatic capacitance input device according to embodiment 3;
  • FIGS. 12A to 12C are explanatory diagrams schematically illustrating the cross-sectional configuration of the substrate of the electrostatic capacitance input device according to embodiment 3;
  • FIGS. 13A to 13D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device according to embodiment 4;
  • FIG. 14 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate of the electrostatic capacitance input device according to embodiment 4;
  • FIGS. 15A to 15C are explanatory diagrams illustrating the cross-sectional configuration of the electrostatic capacitance input device according to embodiment 4;
  • FIGS. 16A to 16D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device according to embodiment 5;
  • FIG. 17 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate of the electrostatic capacitance input device according to embodiment 5;
  • FIGS. 18A to 18C are explanatory diagrams schematically illustrating the cross-sectional configuration of the substrate of the electrostatic capacitance input device according to embodiment 5; and
  • FIGS. 19A to 19C are explanatory diagrams of electronic equipment having the electrostatic capacitance input device of an embodiment.
  • DETAILED DESCRIPTION
  • The present application will be described below with reference to the accompanying drawings according to an embodiment. It should be noted that, in the figures referred to in the description given below, the layers and members are plotted on different scales so that they are shown in recognizable sizes. The basic configuration common to all the embodiments will be described first. Then, a detailed description will be made of each of the embodiments.
  • [Basic Configuration]
  • (Overall Configuration of the Electro-Optical Device Equipped with an Input Device)
  • FIGS. 1A to 1C are explanatory diagrams of an electrostatic capacitance input device to which the present application is applied. FIG. 1A is an explanatory diagram schematically illustrating the overall configuration of an electro-optical device equipped with an input device having the electrostatic capacitance input device according to the present embodiment. FIG. 1B is an explanatory diagram schematically illustrating the electrical configuration of the electrostatic capacitance input device. FIG. 1C is an explanatory diagram of potentials supplied to the electrostatic capacitance input device. FIGS. 2A and 2B are explanatory diagrams schematically illustrating the cross-sectional configuration of an electro-optical device equipped with an input device to which the present application is applied. FIG. 2A is an explanatory diagram of a configuration example in which an embodiment of the input position detection electrodes are provided on a first surface that is on the input operation side of the substrate. FIG. 2B is an explanatory diagram of a configuration example in which the input position detection electrodes are provided on a second surface that is on the side opposite to the input operation side of the substrate.
  • In FIG. 1A, an electro-optical device 100 equipped with an input device according to the present embodiment generally includes an image generating device 5 and electrostatic capacitance input device 1. The image generating device 5 is made up, for example, of a liquid crystal device. The electrostatic capacitance input device 1 is stacked on the surface of the image generating device 5 on the display light emission side. The electrostatic capacitance input device 1 includes an input panel 2 (touch panel). The image generating device 5 includes a liquid crystal panel serving as an electro-optical panel 5 a (display panel). In the present embodiment, both the input panel 2 and electro-optical panel 5 a are rectangular in plan view. The region at the center of the electrostatic capacitance input device 1 and electro-optical device 100 equipped with an input device as seen in plan view is an input region 2 a. On the other hand, the region of the same devices 5 and 100 overlapping the input region 2 a as seen in plan view is an image formation region. A flexible wiring board 35 is connected to the input panel 2 on the side of an edge portion 20 e. A flexible wiring board 73 is connected to the electro-optical panel 5 a on the side of the edge portion 20 e.
  • As illustrated in FIG. 1B, a control IC 10 adapted to detect the input operation on the input panel 2 is electrically connected to the electrostatic capacitance input device 1 via the flexible wiring board 35. A potential which will be described later with reference to FIG. 1C is supplied from the IC 10 to the input panel 2.
  • In FIGS. 1A, 2A and 2B, the image generating device 5 is a transmissive or semi-transmissive active matrix liquid crystal display device. A backlight device (not shown) is provided on the side opposite to that (side opposite to the display light emission side) on which the input panel 2 is provided. The backlight device includes a light-transmitting light guide plate and light source. The light-transmitting light guide plate is provided on the side of the electro-optical panel 5 a opposite to that on which the electrostatic capacitance input device 1 is provided. The light source includes an LED adapted to emit white light toward the side edge portions of the light guide plate. Light emitted from the light source enters the light guide plate from its side edge portions, being emitted toward the electro-optical panel 5 a while propagating through the light guide plate. An optical member in a sheet form such as a light-scattering sheet or prism sheet may be arranged between the light guide plate and electro-optical panel 5 a.
  • In the image generating device 5, a first polarizer 81 is stacked on the display light emission side of the electro-optical panel 5 a, and a second polarizer 82 on the side of the electro-optical panel 5 a opposite to the display light emission side. Therefore, the electrostatic capacitance input device 1 is glued to the first polarizer 81 with a light-transmitting adhesive (not shown) such as acrylic resin-based adhesive. The electro-optical panel 5 a includes a light-transmitting element substrate 50 and light-transmitting opposed substrate 60. The light-transmitting element substrate 50 is provided on the display light emission side. The opposed substrate 60 is provided to be opposed to the element substrate 50. The element substrate 50 and opposed substrate 60 are bonded together with a sealing material 71 in the form of a rectangular frame. A liquid crystal layer 55 is held in the region surrounded by the sealing material 71 between the opposed substrate 60 and element substrate 50. A plurality of pixel electrodes 58 are formed on the surface of the element substrate 50 opposed to the opposed substrate 60. The pixel electrodes 58 are formed with a light-transmitting conductive film such as ITO (Indium Tin Oxide) film. A common electrode 68 is formed on the surface of the opposed substrate 60 opposed to the element substrate 50. The common electrode 68 is formed with a light-transmitting conductive film such as ITO (Indium Tin Oxide) film. It should be noted that if the image generating device 5 is an IPS (In Plane Switching) or FFS (Fringe Field Switching) device, the common electrode 68 is provided on the element substrate 50. On the other hand, the element substrate 50 may be provided on the display light emission side. In the element substrate 50, a drive IC 75 is COG-mounted in an overhanging section 59 hanging over the edge of the opposed substrate 60. Further, a flexible wiring board 73 is connected to the overhanging section 59. It should be noted that drive circuits may be formed on the element substrate 50 concurrently with switching elements on the same substrate 50.
  • In the electro-optical device 100 equipped with an input device configured as described above, a light-transmitting conductive layer 99 (not shown in FIGS. 1A to 1C, refer to FIGS. 2A and 2B) made, for example, of an ITO film is provided between the electro-optical panel 5 a and input panel 2. The conductive layer 99 prevents electromagnetic noise emitted from the electro-optical panel 5 a from entering the input panel 2.
  • (Detailed Configuration of the Input Device 1)
  • In the electrostatic capacitance input device 1 illustrated in FIGS. 2A and 2B, the input panel 2 includes a light-transmitting substrate 20 made, for example, of a glass or plastic plate. In the present embodiment, a glass substrate is used as the substrate 20. It should be noted that when the substrate 20 includes a plastic material, a heat-resistant and light-transmitting sheet made of PET (polyethylene terephthalate), PC (polycarbonate), PES (polyethersulphone), PI (polyimide) or cyclic olefin resin such as polynorbornene can be used as the plastic material. A description will be given below assuming that the surface of the substrate 20 on the input operation side is a first surface 20 a and that the surface thereof on the side opposite to the input operation side is a second surface 20 b.
  • In the configuration example of the electrostatic capacitance input device 1 shown in FIG. 2A of the two examples illustrated in FIGS. 2A and 2B, a first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are formed, from bottom to top as seen from the substrate 20, on the first surface 20 a of the substrate 20. Input position detection electrodes 21 are formed with at least one of the first and second conductive films 4 a and 4 b. The flexible wiring board 35 is connected to the first surface 20 a on the edge portion 20 e of the substrate 20. A light-transmitting and insulating cover 90 is glued to the first surface 20 a of the substrate 20, for example, with an adhesive 90 e. An insulating light-shielding layer 90 a is printed in the region of the cover 90 overlapping an outer region 2 b on the first surface 20 a of the substrate 20. The input region 2 a is surrounded by the light-shielding layer 90 a. The light-shielding layer 90 a overlaps the outer region of the electro-optical panel 5 a, shutting out light leaking from the light source and the edge portions of the light guide of the image generating section 5.
  • On the other hand, the light-transmitting conductive layer 99 is formed roughly over the entire second surface 20 b of the substrate 20 to prevent electromagnetic noise emitted from the electro-optical panel 5 a from entering the input panel 2. Wires 35 a of the flexible wiring board 35 are connected to the conductive layer 99, thus allowing a shield potential, which will be described later, to be applied to the conductive layer 99 via the flexible wiring board 35.
  • In the configuration example shown in FIG. 2B, the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are formed, from bottom to top as seen from the substrate 20, on the second surface 20 a of the substrate 20, as described in detail later. Of the first and second conductive films 4 a and 4 b, at least one of the two films is used to form the input position detection electrodes 21. In this configuration, the flexible wiring board 35 is connected to the second surface 20 b on the edge portion 20 e of the substrate 20. In the present embodiment, the light-transmitting and insulating cover 90 is also glued to the first surface 20 a of the substrate 20, for example, with the adhesive 90 e. The insulating light-shielding layer 90 a is printed in the region of the cover 90 overlapping the outer region 2 b on the first surface 20 a of the substrate 20.
  • On the other hand, the light-transmitting conductive layer 99 is formed roughly over the entire surface of the element substrate 50 on the side of the input panel 2 to prevent electromagnetic noise emitted from the electro-optical panel 5 a from entering the input panel 2. The wires 35 a of the flexible wiring board 35 are connected to the conductive layer 99, thus allowing the shield potential, which will be described later, to be applied to the conductive layer 99 via the flexible wiring board 35
  • A description will be given below of examples, as embodiments 1, 2 and 3, in which the present application is applied to the embodiments of forming the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b on the first surface 20 a of the substrate 20 (embodiment shown in FIG. 2A). On the other hand, a description will be given below of examples, as embodiments 4 and 5, in which the present application is applied to the embodiments of forming the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b on the second surface 20 b of the substrate 20 (embodiment shown in FIG. 2B).
  • Embodiment 1
  • A description will be given below of the type of the electrostatic capacitance input device 1, described with reference to FIG. 2A, with reference to FIGS. 3A to 6C. FIGS. 3A to 3D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device 1 according to embodiment 1 of the present application. FIG. 3A is an explanatory diagram illustrating the two-dimensional positional relationship between the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1. FIG. 3B is an explanatory diagram illustrating the two-dimensional configuration of the first conductive film 4 a formed on the substrate 20. FIG. 3C is an explanatory diagram illustrating the two-dimensional configuration of the interlayer insulating film 214 formed on the substrate 20. FIG. 3D is an explanatory diagram illustrating the two-dimensional configuration of the second conductive film 4 b formed on the substrate 20. FIG. 3A illustrates the elements shown in FIGS. 3B, 3C and 3D in an overlapping fashion.
  • FIG. 4 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 1 of the present application. FIGS. 5A to 5C are explanatory diagrams illustrating the cross-sectional configuration of the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 1 of the present application. FIGS. 5A, 5B and 5C are cross-sectional views of the substrate 20 taken along lines A1-A1′, B1-B1′ and C1-C1′ respectively shown in FIG. 4. FIGS. 6A to 6C are explanatory diagrams illustrating the configuration of wires formed on the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 1 of the present application. FIGS. 6A, 6B and 6C are a plan view of the wires and cross-sectional views thereof taken along lines E-E′ and F-F′, respectively.
  • It should be noted that the first conductive film 4 a is shaded with oblique lines sloping upward to the right, and the second conductive film 4 b with oblique lines sloping downward to the right in FIGS. 3A, 3B, 3D and 4. In FIG. 3C, the interlayer insulating film 214 is shaded with a plurality of dots. In FIGS. 3B, 3C, 3D and 4, the corners of the input region 2 a are shown with markings in the form of letter L. It should be noted that the same is true for the drawings which will be referred to in embodiments 2 to 5 which will be described later.
  • As illustrated in FIGS. 3A to 5C, the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are formed in this order, from bottom to top as seen from the substrate 20, on the second surface 20 a of the substrate 20. In the present embodiment, the first and second conductive films 4 a and 4 b are made of a light-transmitting conductive film of 10 to 40 nm in thickness such as ITO or IZO (Indium Zinc Oxide) film. The interlayer insulating film 214 is made of a light-transmitting insulating film of 40 to 60 nm in thickness such as silicon oxide film. In the present embodiment, a light-transmitting underlying protective film 217 made, for example, of a silicon oxide film is formed over the entire first surface 20 a of the substrate 20. The first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are formed in this order on the light-transmitting underlying protective film 217. As described with reference to FIG. 2A, on the other hand, the light-transmitting conductive layer 99 is formed roughly over the entire second surface 20 b of the substrate 20 to prevent electromagnetic noise emitted from the electro-optical panel 5 a from entering the input panel 2 (refer to FIGS. 5A to 5C).
  • As illustrated in FIG. 3B, the first conductive film 4 a is formed as a plurality of rectangular regions in the input region 2 a first. These rectangular regions make up the input position detection electrodes 21 (pad portions 211 a and 212 a (large area portions) of first and second input position detection electrodes 211 and 212). The pad portions 211 a and 212 a are arranged alternately in the X and Y directions. In the plurality of pad portions 211 a, the same portions 211 a diagonally adjacent to each other are partially connected together by a junction portion 211 c. In the plurality of pad portions 212 a, the same portions 212 a diagonally adjacent to each other are also partially connected together by the junction portion 211 c. Further, the first conductive film 4 a is formed in the outer region 2 b of the input region 2 a as wires 27 extending from the input position detection electrodes 21. The first conductive film 4 a is also formed in a region near the edge portion 20 e overlapping first and second mounting terminals 24 a and 24 b.
  • As illustrated in FIG. 3C, the interlayer insulating film 214 is formed over the entire input region 2 a. Further, the same film 214 is formed over a large region excluding the outer periphery of the substrate 20. Still further, contact holes 214 a are formed in the interlayer insulating film 214, with each set containing the four contact holes 214 a. Here, the gap between the outer periphery of the interlayer insulating film 214 and the edge portion 20 e of the substrate 20 is wider than that between the outer periphery of the interlayer insulating film 214 and other edge portions 20 f, 20 g and 21 h, thus securing a space for forming the first and second mounting terminals 24 a and 24 b.
  • As illustrated in FIG. 3D, the second conductive film 4 b is formed as relay electrodes 215 in the regions of the input region 2 a overlapping the contact holes 214 a shown in FIG. 3C. Further, the same film 4 b is formed in the outer region 2 b of the input region 2 a as a shield electrode 28 in the form of a rectangular frame entirely surrounding the input region 2 a. Still further, the same film 4 b is formed in a region near the edge portion 20 e overlapping the first and second mounting terminals 24 a and 24 b.
  • When the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b, that are configured as described above, are stacked one on top of another, the substrate 20 is configured as illustrated in FIGS. 3A, 4 and 5A to 5C. When seen in plan view, the substrate 20 has the plurality of input position detection electrodes 21 formed in the input region 2 a. In the present embodiment, the input position detection electrodes 21 include the plurality of columns of first and second input position detection electrodes 211 and 212. The first input position detection electrodes 211 (shown by thick solid lines in FIG. 3A) extend in a first direction (direction shown by arrow Y). The second input position detection electrodes 212 (shown by thick dashed lines in FIG. 3A) extend in a second direction (direction shown by arrow X).
  • Of the first and second conductive films 4 a and 4 b, the first conductive film 4 a is used to form the input position detection electrodes 21 (first and second input position detection electrodes 211 and 212). As a result, the input position detection electrodes 21 are made up of the same layer. On the first surface 20 a of the substrate 20, therefore, a plurality of intersecting portions 218 exist between the first and second input position detection electrodes 211 and 212. In the present embodiment, of the first and second input position detection electrodes 211 and 212, the first input position detection electrodes 211 are connected together in the Y direction by the junction portions 211 c made of the first conductive film 4 a at the intersecting portions 218, thus extending in the Y direction. In contrast, interruption portions 218 a are formed at the intersecting portions 218 for the second input position detection electrodes 212. Further, the interlayer insulating film 214, made, for example, of a silicon oxide film, is formed in the overlying layer of the first and second input position detection electrodes 211 and 212. The light-transmitting relay electrodes 215 are formed with the second conductive film 4 b in the overlying layer of the interlayer insulating film 214. The same electrodes 215 electrically connect the second input position detection electrodes 212 which is interrupted at the intersecting portions 218 together via the four contact holes 214 a of the interlayer insulating film 214. As a result, the second input position detection electrodes 212 are electrically connected together in the X direction. It should be noted that the relay electrodes 215 are never likely to be shorted out because the same electrodes 215 overlap the junction portions 211 c via the interlayer insulating film 214.
  • Each of the first and second input position detection electrodes 211 and 212 configured as described above includes the rectangular pad portion 211 a or 212 a having a large area in a region sandwiched between the intersecting portions 218. In the first input position detection electrodes 211, the junction portions 211 c located at the intersecting portions 218 are narrower than the pad portions 211 a and 212 a. Further, the relay electrodes 215 are also formed narrower than the pad portions 211 a and 212 a.
  • (Configuration of the Wires 27 and Shield Electrode 28)
  • In the electrostatic capacitance input device 1 according to the present embodiment, the plurality of wires 27 are formed in the outer region 2 b of the input region 2 a on the first surface 20 a of the substrate 20. Each of the same wires 27 extends from one of the first and second input position detection electrodes 211 and 212 to the edge portion 20 e of the substrate 20. More specifically, the wires 27 connected to the first input position detection electrodes 211 are routed between the input region 2 a and the edge portion 20 e of the substrate 20. On the other hand, the wires 27 connected to the second input position detection electrodes 212 extend linearly between the input region 2 a and the edge portion 20 f or 20 h of the substrate 20 first and then are routed between the input region 2 a and the edge portion 20 e of the substrate 20. In the wires 27 configured as described above, the portions near the edge portion 20 e of the substrate 20 include the first mounting terminals 24 a. The flexible wiring board 35 described with reference to FIGS. 1A to 1C and 2 is connected to the first mounting terminals 24 a.
  • On the other hand, the shield electrode 28 is formed in a region overlapping the wires 27 in the outer region 2 b of the input region 2 a on the first surface 20 a of the substrate 20. In the present embodiment, of the first and second conductive films 4 a and 4 b, the second conductive film 4 b on the input operation side is used to form the shield electrode 28. The interlayer insulating film 214 is provided between the wires 27 and shield electrode 28.
  • In the present embodiment, the wires 27 are formed in the regions corresponding to three sides, i.e., one region sandwiched between the input region 2 a and the edge portion 20 e of the substrate 20, another between the input region 2 a and the edge portion 20 f of the substrate 20, and still another between the input region 2 a and the edge portion 20 h of the substrate 20. In contrast, the shield electrode 28 is formed in the form of a rectangular frame connected in the circumferential direction in the regions corresponding to four sides, i.e., one region sandwiched between the input region 2 a and the edge portion 20 e of the substrate 20, another between the input region 2 a and the edge portion 20 f of the substrate 20, still another between the input region 2 a and the edge portion 20 g of the substrate 20, and still another between the input region 2 a and the edge portion 20 h of the substrate 20. Further, the shield electrode 28 is wider than each of the wires 27. Therefore, the shield electrode 28 is formed in a large region including that in which the wires 27 extend on the input operation side. Still further, the shield electrode 28 hangs over the outer periphery of the interlayer insulating film 214. As a result, the shield electrode 28 covers a side portion 214 e of the interlayer insulating film 214.
  • In the outer region 2 b on the first surface 20 a of the substrate 20, on the other hand, the two second mounting terminals 24 b are formed in such a manner as to sandwich, on both sides, the first mounting terminals 24 a arranged in columns. The first mounting terminals 24 a are electrically connected to the wires 27, and the second mounting terminals 24 b to the shield electrode 28 on both sides of the region where the first mounting terminals 24 a are arranged.
  • (Manufacturing Method of the Substrate 20)
  • The manufacturing method of the substrate 20 configured as described above will be briefly described while at the same time describing, for example, the configuration of the first and second mounting terminals 24 a and 24 b. In order to form the substrate 20, a light-transmitting conductive film is formed first that makes up the first conductive film 4 a. Then, the light-transmitting conductive film is patterned by etching as illustrated in FIG. 3B, thus forming the input position detection electrodes 21 (first and second input position detection electrodes 211 and 212) and wires 27.
  • Next, the interlayer insulating film 214 is formed. Then, the same film 214 is patterned by etching as illustrated in FIG. 3C, thus forming the contact holes 214 a. At the same time, the interlayer insulating film 214 is removed from the edge portions of the substrate 20
  • Next, the light-transmitting conductive film making up the second conductive film 4 b is formed. Then, the same film is patterned by etching as illustrated in FIG. 3D, thus forming the relay electrodes 215 and shield electrode 28. At this time, the shield electrode 28 is formed in such a manner that it hangs over the outer periphery of the interlayer insulating film 214. As a result, the shield electrode 28 covers the side portion 214 e of the interlayer insulating film 214. It should be noted that, in the present embodiment, a light-transmitting top coat layer 219 is formed on top of the second conductive film 4 b. The top coat layer 219 is made, for example, of a resin composition or silicon oxide and formed by applying and hardening a liquid composition.
  • In the present embodiment, the first and second mounting terminals 24 a and 24 b are formed at the same time in the above step. That is, when the input position detection electrodes 21 and wires 27 are formed with the first conductive film 4 a, the same film 4 a is left in a region overlapping the first or second mounting terminal 24 a or 24 b as illustrated in FIGS. 5B and 5C. It should be noted, however, that, in this condition, the first conductive film 4 a left in the region overlapping the first or second mounting terminal 24 a or 24 b will be removed by etching when the relay electrodes 215 and shield electrode 28 are formed with the second conductive film 4 b. In the present embodiment, therefore, the second conductive film 4 b is left in a region overlapping the first or second mounting terminal 24 a or 24 b when the relay electrodes 215 and shield electrode 28 are formed with the second conductive film 4 b. This ensures that the first conductive film 4 a formed in the region overlapping the first or second mounting terminal 24 a or 24 b is left unremoved by etching.
  • It should be noted that when the relay electrodes 215 and shield electrode 28 are formed with the second conductive film 4 b, the second conductive film 4 b left with the second mounting terminal 24 b is connected to the shield electrode 28. In contrast, an interruption portion is provided between the same film 4 b left with the first mounting terminal 24 a and the shield electrode 28. It should be noted, however, that the edge portion of the second conductive film 4 b left with the first mounting terminal 24 a overlaps the interlayer insulating film 214. Therefore, the second conductive film 4 b formed in the region overlapping the first mounting terminal 24 a completely overlaps the first conductive film 4 a formed in the region overlapping the first mounting terminal 24 a. This positively ensures that the first conductive film 4 a is left unremoved in the region overlapping the first mounting terminal 24 a.
  • Further, when the wires 27 are formed in the present embodiment, the first conductive film 4 a should preferably extend along the region where the wires 27 are formed, and a metal layer 4 c made, for example, of chromium, silver, aluminum or silver-aluminum alloy should preferably be provided on top of the first conductive film 4 a so as to extend along the region where the wires 27 are formed, as illustrated in FIGS. 6A to 6C. This multi-layer structure contributes to reduced resistance of the wires 27.
  • (Input Position Detection Operation)
  • In the electrostatic capacitance input device 1 according to the present embodiment, the IC 10 is connected to the first and second mounting terminals 24 a and 24 b of the input panel 2 via the flexible wiring board 35 as illustrated in FIG. 1B. Here, the IC 10 includes terminals 11 a and a terminal 11 b. The terminals 11 a sequentially output a position detection signal VD to the first mounting terminals 24 a via the flexible wiring board 35. The terminal 11 b outputs a shield potential VS to the second mounting terminal 24 b via the flexible wiring board 35. It should be noted that the IC 10 also includes a ground terminal adapted to output a ground potential to the input panel 2. However, this terminal is not directly related to the present application. Therefore, the description and illustration thereof are omitted.
  • In the electrostatic capacitance input device 1 configured as described above, the IC 10 outputs the position detection signal VD, for example, in the form of a rectangular pulse illustrated in FIG. 1C. As a result, when the input position detection electrode 21 has no parasitic capacitance, a signal having a waveform shown by a solid line in FIG. 1C is output from the terminals 11 a. In contrast, if the input position detection electrode 21 has a parasitic capacitance, the waveform is distorted due to the capacitance as illustrated by a dashed line in FIG. 1C. This makes it possible to determine whether the input position detection electrodes 21 have any parasitic capacitance. In the present embodiment, therefore, the position detection signal VD is sequentially output to each of the plurality of input position detection electrodes 21 to monitor the electrostatic capacitance coupled thereto. As a result, when a finger approaches one of the plurality of input position detection electrodes 21, the electrostatic capacitance of the same electrode 21 approached by the finger increases by the amount formed between the electrode and finger, thus allowing for the electrode in question to be identified.
  • (Function and Effect of the Present Embodiment)
  • The electrostatic capacitance input device 1 according to the present embodiment is susceptible to electromagnetic noise because it detects the changes in capacitance coupled to the input position detection electrodes 21. In the present embodiment, therefore, a shield layer 35 b is formed for the wires 35 a that are formed on the flexible wiring board 35. The shield potential VS is applied to the shield layer 35 b via a shielding wire 35 c. In the present embodiment, the potential applied to the shield layer 35 b as the shield potential VS has the same waveform (and phase) as the position detection signal VD supplied to the input position detection electrodes 21. This ensures freedom from parasitic capacitance between the wires 35 a and shield layer 35 b.
  • Further, in the present embodiment, the shield potential VS having the same waveform (and phase) as the position detection signal VD is applied to the shield electrode 28 from the IC 10 via a shielding wire 35 d of the flexible wiring board 35 and the second mounting terminals 24 b. Here, the shield electrode 28 overlaps, on the input operation side, the plurality of wires 27 extending in the outer region 2 b of the input region 2 a of the substrate 20. The shield electrode 28 shuts out electromagnetic noise trying to find its way into the wires 27 from the input operation side, thus making the input panel 2 immune to electromagnetic waves trying to find their way from the input operation side. Therefore, the electrostatic capacitance input device 1 according to the present embodiment is unlikely to malfunction due to electromagnetic noise. Further, the shield electrode 28 is not provided in the input region 2 a on the input operation side, thus posing no hindrance to input position detection based on electrostatic capacitance.
  • Further, the shield potential VS has the same waveform (and phase) as the position detection signal VD supplied to the input position detection electrodes 21. This ensures freedom from parasitic capacitance between the wires 27 and shield electrode 28. As a result, even if the shield electrode 28 is provided, input position detection based on electrostatic capacitance will not be hindered.
  • Further, of the first and second conductive films 4 a and 4 b used to form the first and second input position detection electrodes 211 and 212 and relay electrodes 215, the first conductive film 4 a on the side opposite to the input operation side is used to form the wires 27. In contrast, of the first and second conductive films 4 a and 4 b, the second conductive film 4 b on the input operation side is used to form the shield electrode 28. This provides advantages including no need to provide a shield electrode externally.
  • Further, the shield electrode 28 is provided all along the outer periphery of the substrate 20, thus shutting out electromagnetic noise trying to find its way from the input operation side more positively. Still further, the shield electrode 28 covers the side portion 214 e of the interlayer insulating film 214 near the outer periphery of the substrate 20. This shuts out electromagnetic noise trying to find its way into the wires 27 from the surrounding environment.
  • Further, the first and second mounting terminals 24 a and 24 b are provided in the outer region 2 b of the substrate 20 using both the first and second conductive films 4 a and 4 b. This allows for a potential to be applied externally to the shield electrode 28 via the flexible wiring board 35 connected to the substrate 20, thus making it possible to apply the shield potential VS to the shield electrode 28 with ease. Further, the common flexible wiring board 35 can be connected to the first and second mounting terminals 24 a and 24 b. Moreover, the second mounting terminals 24 b are electrically connected to the shield electrode 28, one on each side of the region where the first mounting terminals 24 a are arranged, thus shutting out electromagnetic noise trying to find its way into the wires 27 from the surrounding environment.
  • Embodiment 2
  • A description will be given of an example based on embodiment 1 in which a shielding auxiliary electrode 29 is added to the substrate 20 with reference to FIGS. 7A to 9C. FIGS. 7A to 7D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device 1 according to embodiment 2 of the present application. FIG. 7A is an explanatory diagram illustrating the two-dimensional positional relationship between the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1. FIG. 7B is an explanatory diagram illustrating the two-dimensional configuration of the first conductive film 4 a formed on the substrate 20. FIG. 7C is an explanatory diagram illustrating the two-dimensional configuration of the interlayer insulating film 214 formed on the substrate 20. FIG. 7D is an explanatory diagram illustrating the two-dimensional configuration of the second conductive film 4 b formed on the substrate 20. FIG. 7A illustrates the elements shown in FIGS. 7B, 7C and 7D in an overlapping fashion.
  • FIG. 8 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 2 of the present application. FIGS. 9A to 9C are explanatory diagrams illustrating the cross-sectional configuration of the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 2 of the present application. FIGS. 9A, 9B and 9C are cross-sectional views of the substrate 20 taken along lines A2-A2′, B2-B2′ and C2-C2′ respectively shown in FIG. 8. It should be noted that the present embodiment is identical in basic configuration to embodiment 1. Therefore, like components are denoted by the same reference numerals, and the description thereof is omitted.
  • In the electrostatic capacitance input device 1 according to the present embodiment, the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are also formed, from bottom to top as seen from the substrate 20, on the first surface 20 a of the substrate 20 as in embodiment 1, as illustrated in FIGS. 7A to 9C.
  • As illustrated in FIG. 7B, the first conductive film 4 a is formed as the pad portions 211 a and 212 a of the first and second input position detection electrodes 211 and 212 and the wires 27 as in embodiment 1. The first conductive film 4 a is also formed in a region near the edge portion 20 e overlapping the first and second mounting terminals 24 a and 24 b.
  • Unlike embodiment 1, the first conductive film 4 a is formed as the shielding auxiliary electrode 29 outside the wires 27 in the outer region 2 b of the substrate 20 in the present embodiment. Here, the wires 27 are formed in the regions corresponding to the three sides of the substrate 20, i.e., one region between the input region 2 a and the edge portion 20 e of the substrate 20, another between the input region 2 a and the edge portion 20 f of the substrate 20, and still another between the input region 2 a and the edge portion 20 h of the substrate 20. In contrast, the shielding auxiliary electrode 29 is formed along all the sides of the substrate 20, i.e., one region sandwiched between the input region 2 a and the edge portion 20 e of the substrate 20, another between the input region 2 a and the edge portion 20 f of the substrate 20, still another between the input region 2 a and the edge portion 20 g of the substrate 20, and still another between the input region 2 a and the edge portion 20 h of the substrate 20. It should be noted that the shielding auxiliary electrode 29 bends midway toward the second mounting terminal 29 in the region sandwiched between the input region 2 a and the edge portion 20 e of the substrate 20. The same electrode 29 is interrupted in the region where the wires 27 extend.
  • As illustrated in FIG. 7C, the interlayer insulating film 214 is formed over a large region excluding the outer periphery of the substrate 20 as in embodiment 1. The contact holes 214 a are formed in the interlayer insulating film 214, with each set containing the four contact holes 214 a. Here, the interlayer insulating film 214 is formed slightly more inward than the outer periphery of the substrate 20. As a result, the interlayer insulating film 214 is not formed near the outer periphery of the substrate 20.
  • As illustrated in FIG. 7D, the second conductive film 4 b is formed as the relay electrodes 215 in the regions of the input region 2 a overlapping the contact holes 214 a shown in FIG. 7C. Further, the same film 4 b is formed in the outer region 2 b of the input region 2 a as the shield electrode 28. Still further, the same film 4 b is formed in a region near the edge portion 20 e overlapping the first and second mounting terminals 24 a and 24 b. A potential having the same waveform (and phase) as the position detection signal supplied to the input position detection electrodes 21 is applied to the shield electrode 28.
  • Further, the two second mounting terminals 24 b are formed in the outer region 2 b on the first surface 20 a of the substrate 20, one on each side of the region where the first mounting terminals 24 a are arranged. The first mounting terminals 24 a are electrically connected to the wires 27, and the second mounting terminals 24 b to the shield electrode 28 on both sides of the region where the first mounting terminals 24 a are arranged. The present embodiment is similar in other configurations to embodiment 1. Therefore, the description thereof is omitted.
  • In the input panel 2 configured as described above, of the first and second conductive films 4 a and 4 b, the first conductive film 4 a on the side opposite to the input operation side is used to form the wires 27 as in embodiment 1. Of the first and second conductive films 4 a and 4 b, the second conductive film 4 b on the input operation side is used to form the shield electrode 28. The same electrode 28 overlaps the wires 27 on the input operation side. This provides the same advantages as in embodiment 1 including shutting out electromagnetic noise trying to find its way into the wires 27 from the input operation side thanks to the shield electrode 28.
  • The shielding auxiliary electrode 29 is formed to the outside of the outer periphery of the interlayer insulating film 214 at the positions corresponding to the four sides of the substrate 20. Part of the same electrode 29 is exposed from the interlayer insulating film 214. On the other hand, the shield electrode 28 is formed to the outside of the outer periphery of the interlayer insulating film 214 at the positions corresponding to the four sides of the substrate 20. Therefore, the shield electrode 28 covers the side portion 214 e on the outer periphery side of the interlayer insulating film 214. The same electrode 28 is connected to the shielding auxiliary electrode 29 exposed from the interlayer insulating film 214 all along the longitudinal direction (extension direction) of the same electrode 29 on the outer periphery side of the interlayer insulating film 214 (in the region free from the interlayer insulating film 214). This provides substantially reduced resistance of the shield electrode 28. Further, the shield electrode 28 and shielding auxiliary electrode 29 suppress electromagnetic noise from finding its way into the wires 27 from the surrounding environment.
  • Embodiment 3
  • A description will be given of an example in which the input position detection electrodes are formed with the second conductive film 4 b in the type of the electrostatic capacitance input device 1 described with reference to FIG. 2A. FIGS. 10A to 10D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device 1 according to embodiment 3 of the present application. FIG. 10A is an explanatory diagram illustrating the two-dimensional positional relationship between the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1. FIG. 10B is an explanatory diagram illustrating the two-dimensional configuration of the first conductive film 4 a formed on the substrate 20. FIG. 10C is an explanatory diagram illustrating the two-dimensional configuration of the interlayer insulating film 214 formed on the substrate 20. FIG. 10D is an explanatory diagram illustrating the two-dimensional configuration of the second conductive film 4 b formed on the substrate 20. FIG. 10A illustrates the elements shown in FIGS. 10B, 10C and 10D in an overlapping fashion.
  • FIG. 11 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 3 of the present application. FIGS. 12A to 12C are explanatory diagrams illustrating the cross-sectional configuration of the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 3 of the present application. FIGS. 12A, 12B and 12C are cross-sectional views of the substrate 20 taken along lines A3-A3′, B3-B3′ and C3-C3′ respectively shown in FIG. 11. It should be noted that the present embodiment is identical in basic configuration to embodiment 1. Therefore, like components are denoted by the same reference numerals, and the description thereof is omitted.
  • In the electrostatic capacitance input device 1 according to the present embodiment, the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are also formed in this order, from bottom to top as seen from the substrate 20, on the first surface 20 a of the substrate 20 as in embodiment 1, as illustrated in FIGS. 10A to 12C.
  • As illustrated in FIG. 10B, the first conductive film 4 a is formed as the plurality of relay electrodes 215 in the input region 2 a first. Further, the same film 4 a is formed as the plurality of wires 27 in the outer region 2 b. Here, the wires 27 have their edge portions located inside the input region 2 a. These edge portions serve as connection portions 27 a that are wider than the wires 27. Further, the first conductive film 4 a is formed as the shielding auxiliary electrode 29 in the regions of the outer region 2 b corresponding to the four sides of the substrate 20 as in embodiment 2.
  • As illustrated in FIG. 10C, the interlayer insulating film 214 is formed only at the intersecting portions 218, which will be described later, in the input region 2 a. The same film 214 is formed in the form of a rectangular frame in the outer region 2 b so as to surround the input region 2 a. Here, the interlayer insulating film 214 is formed slightly more inward than the outer periphery of the substrate 20. As a result, the interlayer insulating film 214 is not formed near the outer periphery of the substrate 20.
  • As illustrated in FIG. 10D, the second conductive film 4 b is formed as a plurality of rectangular regions in the input region 2 a. These rectangular regions make up the pad portions 211 a and 212 a (large area portions) of the first and second input position detection electrodes 211 and 212. Further, the same film 4 b is formed as the shield electrode 28 in the form of a rectangular frame in the outer region 2 b. Still further, the same film 4 b is formed in a region near the edge portion 20 e overlapping the first and second mounting terminals 24 a and 24 b.
  • When the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b, that are configured as described above, are stacked one on top of another, the substrate 20 is configured as illustrated in FIGS. 10A, 11 and 12A to 12C. When seen in plan view, the substrate 20 has the plurality of input position detection electrodes 21 formed in the input region 2 a. In the present embodiment, the input position detection electrodes 21 include the plurality of columns of first and second input position detection electrodes 211 and 212. The first input position detection electrodes 211 (shown by thick solid lines in FIG. 10A) extend in the first direction (direction shown by arrow Y). The second input position detection electrodes 212 (shown by thick dashed lines in FIG. 10A) extend in the second direction (direction shown by arrow X). Here, of the first and second conductive films 4 a and 4 b, the first conductive film 4 a is used to form the input position detection electrodes 21 (first and second input position detection electrodes 211 and 212). As a result, the input position detection electrodes 21 are made up of the same layer. On the first surface 20 a of the substrate 20, therefore, the plurality of intersecting portions 218 exist between the first and second input position detection electrodes 211 and 212. In the present embodiment, of the first and second input position detection electrodes 211 and 212, the first input position detection electrodes 211 are connected in the Y direction by the junction portions 211 c made of the second conductive film 4 b at the intersecting portions 218, thus extending in the Y direction. In contrast, the interruption portions 218 a are formed at the intersecting portions 218 for the second input position detection electrodes 212. Further, the relay electrodes 215 and interlayer insulating film 214 are formed with the first conductive film 4 a at the intersecting portions 218. It should be noted that the second input position detection electrodes 212 are electrically connected together in the X direction by the relay electrodes 215.
  • On the other hand, although the wires 27 are formed with the first conductive film 4 a, the connection portions 27 a are located inside the input region 2 a. Moreover, the overlying layer of the connection portions 27 a is not covered with the interlayer insulating film 214. Therefore, when formed with the second conductive film 4 b, the input position detection electrodes 21 overlap the connection portions 27 a of the wires 27. As a result, the same electrodes 21 are electrically connected to the connection portions 27 a.
  • Further, the two second mounting terminals 24 b are formed in the outer region 2 b on the first surface 20 a of the substrate 20, one on each side of the region where the first mounting terminals 24 a are arranged. The first mounting terminals 24 a are electrically connected to the wires 27, and the second mounting terminals 24 b to the shield electrode 28 on both sides of the region where the first mounting terminals 24 a are arranged. The present embodiment is similar in other configurations to embodiment 1. Therefore, the description thereof is omitted.
  • In the input panel 2 configured as described above, of the first and second conductive films 4 a and 4 b, the first conductive film 4 a on the side opposite to the input operation side is used to form the wires 27 as in embodiments 1 and 2. Of the first and second conductive films 4 a and 4 b, the second conductive film 4 b on the input operation side is used to form the shield electrode 28. The same electrode 28 overlaps the wires 27 on the input operation side. This provides the same advantages as in embodiment 1 including shutting out electromagnetic noise trying to find its way into the wires 27 from the input operation side thanks to the shield electrode 28.
  • Further, the shield electrode 28 covers the side portion 214 e on the outer periphery side of the interlayer insulating film 214 as in embodiment 2. The same electrode 28 is connected to the shielding auxiliary electrode 29 exposed from the interlayer insulating film 214 all along the longitudinal direction (extension direction) of the same electrode 29 on the outer periphery side of the interlayer insulating film 214 (in the region free from the interlayer insulating film 214). This provides substantially reduced resistance of the shield electrode 28. Further, the shield electrode 28 and shielding auxiliary electrode 29 suppress electromagnetic noise from finding its way into the wires 27 from the surrounding environment.
  • Still further, in the present embodiment, the interlayer insulating film 214 is formed only at the intersecting portions 218 in the input region 2 a. Therefore, the same film 214 is hardly formed in positions overlapping the pad portions 211 a and 212 a of the input position detection electrodes 21 (first and second input position detection electrodes 211 and 212). Therefore, the input panel 2 offers high light transmittance, thus allowing for the electro-optical device 100 equipped with an input device according to the present embodiment to display a bright image.
  • Embodiment 4
  • A description will be given below of a configuration example of the type of the electrostatic capacitance input device 1, described with reference to FIG. 2B, with reference to FIGS. 13A to 15C. FIGS. 13A to 13D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device 1 according to embodiment 4 of the present application. FIG. 13A is an explanatory diagram illustrating the two-dimensional positional relationship between the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1. FIG. 13B is an explanatory diagram illustrating the two-dimensional configuration of the first conductive film 4 a formed on the substrate 20. FIG. 13C is an explanatory diagram illustrating the two-dimensional configuration of the interlayer insulating film 214 formed on the substrate 20. FIG. 13D is an explanatory diagram illustrating the two-dimensional configuration of the second conductive film 4 b formed on the substrate 20. FIG. 13A illustrates the elements shown in FIGS. 13B, 13C and 13D in an overlapping fashion.
  • FIG. 14 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 4 of the present application. FIGS. 15A to 15C are explanatory diagrams illustrating the cross-sectional configuration of the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 4 of the present application. FIGS. 15A, 15B and 15C are cross-sectional views of the substrate 20 taken along lines A4-A4′, B4-B4′ and C4-C4′ respectively shown in FIG. 14. It should be noted that the present embodiment is identical in basic configuration to embodiment 1. Therefore, like components are denoted by the same reference numerals, and the description thereof is omitted.
  • In the electrostatic capacitance input device 1 according to the present embodiment, the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are formed in this order, from bottom to top as seen from the substrate 20, on the second surface 20 b of the substrate 20, as illustrated in FIGS. 13A to 15C.
  • As illustrated in FIG. 13B, the first conductive film 4 a is formed as a plurality of rectangular regions in the input region 2 a first. These rectangular regions make up the pad portions 211 a and 212 a (large area portions) of the first and second input position detection electrodes 211 and 212. Further, the first conductive film 4 a is formed as the shield electrode 28 in the outer region 2 b. A potential having the same waveform (and phase) as the position detection signal VD supplied to the input position detection electrodes 21 is applied to the shield electrode 28.
  • As illustrated in FIG. 13C, the interlayer insulating film 214 is formed over a large region excluding the outer periphery of the substrate 20 as in embodiment 1. The contact holes 214 a are formed in the interlayer insulating film 214, with each set containing the four contact holes 214 a. Further, contact holes 214 b are formed at the positions of the interlayer insulating film 214 overlapping the connection portions 27 a of the wires 27 illustrated in FIG. 13D.
  • As illustrated in FIG. 13D, the second conductive film 4 b is formed as the relay electrodes 215 overlapping the contact holes 214 a shown in FIG. 13C in the input region 2 a as in embodiment 1. Further, the same film 4 b is formed in a region near the edge portion 20 e overlapping first and second mounting terminals 24 a and 24 b. Still further, the same film 4 b is formed as the plurality of wires 27 in the outer region 2 b. The wires 27 have their edge portions located inside the input region 2 a. These edge portions serve as the connection portions 27 a that are wider than the wires 27. Moreover, the second conductive film 4 b is formed as the shielding auxiliary electrode 29 in the regions of the outer region 2 b corresponding to the four sides of the substrate 20. Here, the first mounting terminals 24 a are connected to the wires 27, and the second mounting terminals 24 b to the shielding auxiliary electrode 29.
  • When the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b, that are configured as described above, are stacked one on top of another, the substrate 20 is configured as illustrated in FIGS. 13A, 14 and 15A to 15C. As a result, the plurality of input position detection electrodes 21 are formed in the input region 2 a. On the other hand, the input position detection electrodes 21 (first and second input position detection electrodes 211 and 212) are formed with the first conductive film 4 a, and the wires 27 with the second conductive film 4 b. Even in this case, the contact holes 214 b are formed in the interlayer insulating film 214. Therefore, the input position detection electrodes 21 and wires 27 are electrically connected via the contact holes 214 b.
  • Further, the two second mounting terminals 24 b are formed in the outer region 2 b on the first surface 20 a of the substrate 20, one on each side of the region where the first mounting terminals 24 a are arranged. The first mounting terminals 24 a are electrically connected to the wires 27, and the second mounting terminals 24 b to the shield electrode 28 on both sides of the region where the first mounting terminals 24 a are arranged. The present embodiment is similar in other configurations to embodiment 1. Therefore, the description thereof is omitted.
  • In the input panel 2 configured as described above, of the first and second conductive films 4 a and 4 b, the second conductive film 4 b on the side opposite to the input operation side is used to form the wires 27. Of the first and second conductive films 4 a and 4 b, the first conductive film 4 a on the input operation side is used to form the shield electrode 28. The same electrode 28 overlaps the wires 27 on the input operation side. This provides the same advantages as in embodiment 1 including shutting out electromagnetic noise trying to find its way into the wires 27 from the input operation side thanks to the shield electrode 28.
  • On the other hand, the shielding auxiliary electrode 29 is formed to the outside of the outer periphery of the interlayer insulating film 214 at the positions corresponding to the four sides of the substrate 20 as in embodiment 2. Part of the same electrode 29 is exposed from the interlayer insulating film 214. On the other hand, the shield electrode 28 is formed to the outside of the outer periphery of the interlayer insulating film 214 at the positions corresponding to the four sides of the substrate 20. Therefore, the shielding auxiliary electrode 29 covers the side portion 214 e on the outer periphery side of the interlayer insulating film 214. The shield electrode 28 is connected to the shielding auxiliary electrode 29 exposed from the interlayer insulating film 214 all along the longitudinal direction of the same electrode 29 on the outer periphery side of the interlayer insulating film 214 (in the region free from the interlayer insulating film 214). This provides substantially reduced resistance of the shield electrode 28. Further, the shield electrode 28 and shielding auxiliary electrode 29 suppress electromagnetic noise from finding its way into the wires 27 from the surrounding environment.
  • Embodiment 5
  • A description will be given of a configuration example based on embodiment 4 in which the input position detection electrodes 21 are formed with the second conductive film 4 b with reference to FIGS. 16A to 18C. FIGS. 16A to 16D are explanatory diagrams schematically illustrating the two-dimensional configuration of the electrostatic capacitance input device 1 according to embodiment 5 of the present application. FIG. 16A is an explanatory diagram illustrating the two-dimensional positional relationship between the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1. FIG. 16B is an explanatory diagram illustrating the two-dimensional configuration of the first conductive film 4 a formed on the substrate 20. FIG. 16C is an explanatory diagram illustrating the two-dimensional configuration of the interlayer insulating film 214 formed on the substrate 20. FIG. 16D is an explanatory diagram illustrating the two-dimensional configuration of the second conductive film 4 b formed on the substrate 20. FIG. 16A illustrates the elements shown in FIGS. 16B, 16C and 16D in an overlapping fashion.
  • FIG. 17 is an explanatory diagram illustrating, in an enlarged fashion, the two-dimensional configuration of the electrodes and other components formed on the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 5 of the present application. FIGS. 18A to 18C are explanatory diagrams illustrating the cross-sectional configuration of the substrate 20 of the electrostatic capacitance input device 1 according to embodiment 5 of the present application. FIGS. 18A, 18B and 18C are cross-sectional views of the substrate 20 taken along lines A5-A5′, B5-B5′ and C5-C5′ respectively shown in FIG. 17. It should be noted that the present embodiment is identical in basic configuration to embodiment 1. Therefore, like components are denoted by the same reference numerals, and the description thereof is omitted.
  • In the electrostatic capacitance input device 1 according to the present embodiment, the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b are formed in this order, from bottom to top as seen from the substrate 20, on the second surface 20 b of the substrate 20, as illustrated in FIGS. 16A to 18C.
  • As illustrated in FIG. 16B, the first conductive film 4 a is formed as the relay electrodes 215 at the positions of the input region 2 a overlapping the contact holes 214 a which will be described later. Further, the first conductive film 4 a is also formed as the shield electrode 28 in the outer region 2 b.
  • As illustrated in FIG. 16C, the interlayer insulating film 214 is formed over a large region excluding the outer periphery of the substrate 20 as in embodiment 1. The contact holes 214 a are formed in the interlayer insulating film 214, with each set containing the four contact holes 214 a.
  • As illustrated in FIG. 16D, the second conductive film 4 b is formed as a plurality of rectangular regions in the input region 2 a first. These rectangular regions make up the pad portions 211 a and 212 a (large area portions) of the first and second input position detection electrodes 211 and 212. Further, the same film 4 b is formed in a region near the edge portion 20 e overlapping first and second mounting terminals 24 a and 24 b. Still further, the same film 4 b is formed as the plurality of wires 27 in the outer region 2 b. Moreover, the second conductive film 4 b is formed as the shielding auxiliary electrode 29 in the regions of the outer region 2 b corresponding to the four sides of the substrate 20. Here, the first mounting terminals 24 a are connected to the wires 27, and the second mounting terminals 24 b to the shielding auxiliary electrode 29.
  • When the first conductive film 4 a, interlayer insulating film 214 and second conductive film 4 b, that are configured as described above, are stacked one on top of another, the substrate 20 is configured as illustrated in FIGS. 16A, 17 and 18A to 18C. As a result, the plurality of input position detection electrodes 21 (first and second input position detection electrodes 211 and 212) are formed in the input region 2 a.
  • Further, the two second mounting terminals 24 b are formed in the outer region 2 b on the first surface 20 a of the substrate 20, one on each side of the region where the first mounting terminals 24 a are arranged. The first mounting terminals 24 a are electrically connected to the wires 27, and the second mounting terminals 24 b to the shield electrode 28 on both sides of the region where the first mounting terminals 24 a are arranged. The present embodiment is similar in other configurations to embodiment 1. Therefore, the description thereof is omitted.
  • In the input panel 2 configured as described above, of the first and second conductive films 4 a and 4 b, the second conductive film 4 b on the side opposite to the input operation side is used to form the wires 27. Of the first and second conductive films 4 a and 4 b, the first conductive film 4 a on the input operation side is used to form the shield electrode 28. The same electrode 28 overlaps the wires 27 on the input operation side. This provides the same advantages as in embodiment 1 including shutting out electromagnetic noise trying to find its way into the wires 27 from the input operation side thanks to the shield electrode 28.
  • Further, the shielding auxiliary electrode 29 is formed to the outside of the outer periphery of the interlayer insulating film 214 at the positions corresponding to the four sides of the substrate 20 as in embodiment 2. Part of the same electrode 29 is exposed from the interlayer insulating film 214. On the other hand, the shield electrode 28 is formed to the outside of the outer periphery of the interlayer insulating film 214 at the positions corresponding to the four sides of the substrate 20. Therefore, the shielding auxiliary electrode 29 covers the side portion 214 e on the outer periphery side of the interlayer insulating film 214. The shield electrode 28 is connected to the shielding auxiliary electrode 29 exposed from the interlayer insulating film 214 all along the longitudinal direction of the same electrode 29 on the outer periphery side of the interlayer insulating film 214 (in the region free from the interlayer insulating film 214). This provides substantially reduced resistance of the shield electrode 28. Further, the shield electrode 28 and shielding auxiliary electrode 29 suppress electromagnetic noise from finding its way into the wires 27 from the surrounding environment.
  • OTHER EMBODIMENTS
  • In the embodiments described above, only either of the first and second conductive films 4 a and 4 b is used to form the first and second input position detection electrodes 211 and 212. However, both of the first and second conductive films 4 a and 4 b may be used to form the same electrodes 211 and 212. For example, the first conductive film 4 a may be used to form the first input position detection electrodes 211, and the second conductive film 4 b to form the second input position detection electrodes 212.
  • In the embodiments described above, the first or second conductive film 4 a or 4 b is used to form the shield electrode 28 on the input operation side for the wires 27. Alternatively, however, the light-shielding layer 90 a in the cover 90 shown in FIGS. 2A and 2B may be formed with a conductive film such as chromium and used as a shield electrode.
  • In the embodiments described above, a liquid crystal device is used as the image generating device 5. Alternatively, however, an organic electroluminescence device may be used as the image generating device 5.
  • [Examples of Incorporation into Electronic Equipment]
  • A description will be given next of electronic equipment to which the electro-optical device 100 equipped with an input device according to any one of the embodiments described above is applied. FIG. 19A illustrates the configuration of a laptop personal computer having the electro-optical device 100 equipped with an input device. A personal computer 2000 includes the electro-optical device 100 equipped with an input device as a display unit and a main body section 2010. A power switch 2001 and keyboard 2002 are provided on the main body section 2010. FIG. 19B illustrates the configuration of a mobile phone having the electro-optical device 100 equipped with an input device. A mobile phone 3000 includes a plurality of operation buttons 3001 and scroll buttons 3002 and the electro-optical device 100 equipped with an input device as a display unit. The screen displayed on the electro-optical device 100 equipped with an input device can be scrolled by manipulating the scroll buttons 3002. FIG. 19C illustrates the configuration of a personal digital assistant (PDA) to which the electro-optical device 100 equipped with an input device is applied. A PDA 4000 includes a plurality of operation buttons 4001, a power switch 4002 and the electro-optical device 100 equipped with an input device as a display unit. A variety of information such as address book and schedule book is displayed on the electro-optical device 100 equipped with an input device by manipulating the operation buttons 4001.
  • It should be noted that electronic equipment to which the electro-optical device 100 equipped with an input device is applied includes not only those illustrated in FIGS. 19A to 19C but also digital still cameras, liquid crystal TV sets, viewfinders and monitor-direct-viewing video tape recorders, car navigators, pagers, electronic organizers, electronic calculators, word processors, workstations, TV phones, POS terminals and bank terminals. The electro-optical device 100 equipped with an input device is applicable as a display section of these various pieces of electronic equipment.
  • It should be understood that various changes and modifications to the presently preferred embodiments described herein will be apparent to those skilled in the art. Such changes and modifications can be made without departing from the spirit and scope of the present subject matter and without diminishing its intended advantages. It is therefore intended that such changes and modifications be covered by the appended claims.

Claims (6)

The invention is claimed as follows:
1. An electrostatic capacitance input device comprising:
a substrate including an input region where an input operation is detected and an outer region where the input operation is not detected, the input region including a center portion of the substrate as seen in plan view, the outer region being between an outer periphery of the input region and an outer periphery of the substrate as seen in plan view;
a plurality of input position detection electrodes arranged in the input region;
a plurality of first wires that are electrically connected to the plurality of input position detection electrodes and extend in the outer region of the substrate, and each of which has a terminal arranged in the outer region;
a shield electrode that extends in an extending direction of at least one of the first wires, has a terminal arranged in the outer region, and overlaps the at least one of the first wires;
an insulating layer between the shield electrode and the at least one of the first wires; and
a semiconductor chip including a plurality of output terminals, operatively connected to the input position detection electrodes and the shield electrode, and configured to cause a position detection signal to be applied to the input position detection electrodes with a potential having the same waveform and phase as a potential that is applied to the shield electrode,
wherein each of the terminal of the shield electrode and the terminals of the first wires is connected to a corresponding one of the output terminals of the semiconductor chip.
2. The electrostatic capacitance input device of claim 1,
wherein the terminal of the shield electrode and the terminals of the first wires are arrayed along only one side of the substrate.
3. The electrostatic capacitance input device of claim 1, further comprising:
a wiring board; and
a plurality of second wires arranged on the wiring board,
wherein the semiconductor chip is arranged on the wiring board,
wherein each of the terminal of the shield electrode and the terminals of the first wires is connected to a corresponding one of the output terminals of the semiconductor chip via the second wires.
4. The electrostatic capacitance input device of claim 1, further comprising:
a wiring board; and
a plurality of second wires arranged on the wiring board,
wherein the semiconductor chip is arranged on the wiring board,
wherein each of the terminal of the shield electrode and the terminals of the first wires is connected to a corresponding one of the output terminals of the semiconductor chip via the second wires,
wherein the terminal of the shield electrode and the terminals of the first wires are arrayed along only one side of the substrate, and
wherein the wiring board is connected to the one side of the substrate along which the terminal of the shield electrode and the terminals of the first wires are arrayed.
5. The electrostatic capacitance input device of claim 1,
wherein materials making up the shield electrode include metal.
6. The electrostatic capacitance input device of claim 1,
wherein materials making up the first wires include metal.
US15/684,447 2009-07-27 2017-08-23 Electrostatic capacitance input device and electro-optical device having input device Abandoned US20170351360A1 (en)

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JP2009173984A JP5300640B2 (en) 2009-07-27 2009-07-27 Capacitance type input device and electro-optical device with input device
JP2009-173984 2009-07-27
US12/839,790 US8482301B2 (en) 2009-07-27 2010-07-20 Electrostatic capacitance input device and electro-optical device having input device
US13/916,220 US8836346B2 (en) 2009-07-27 2013-06-12 Electrostatic capacitance input device and electro-optical device having input device
US14/457,795 US20140347580A1 (en) 2009-07-27 2014-08-12 Electrostatic capacitance input device and electro-optical device having input device
US14/856,211 US9778805B2 (en) 2009-07-27 2015-09-16 Electrostatic capacitance input device and electro-optical device having input device
US15/684,447 US20170351360A1 (en) 2009-07-27 2017-08-23 Electrostatic capacitance input device and electro-optical device having input device

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US13/916,220 Active US8836346B2 (en) 2009-07-27 2013-06-12 Electrostatic capacitance input device and electro-optical device having input device
US14/457,795 Abandoned US20140347580A1 (en) 2009-07-27 2014-08-12 Electrostatic capacitance input device and electro-optical device having input device
US14/856,211 Active US9778805B2 (en) 2009-07-27 2015-09-16 Electrostatic capacitance input device and electro-optical device having input device
US15/684,447 Abandoned US20170351360A1 (en) 2009-07-27 2017-08-23 Electrostatic capacitance input device and electro-optical device having input device

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US13/916,220 Active US8836346B2 (en) 2009-07-27 2013-06-12 Electrostatic capacitance input device and electro-optical device having input device
US14/457,795 Abandoned US20140347580A1 (en) 2009-07-27 2014-08-12 Electrostatic capacitance input device and electro-optical device having input device
US14/856,211 Active US9778805B2 (en) 2009-07-27 2015-09-16 Electrostatic capacitance input device and electro-optical device having input device

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Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5300640B2 (en) 2009-07-27 2013-09-25 株式会社ジャパンディスプレイウェスト Capacitance type input device and electro-optical device with input device
JP5300684B2 (en) * 2009-10-27 2013-09-25 株式会社ジャパンディスプレイウェスト Capacitance input device, method of manufacturing capacitance input device, and electro-optical device with input function
TWI380210B (en) * 2010-03-11 2012-12-21 Alps Electric Co Ltd
JP5513262B2 (en) * 2010-06-02 2014-06-04 株式会社ジャパンディスプレイ Display device
KR101845480B1 (en) * 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
EP2638453A4 (en) * 2010-11-09 2015-11-25 Tpk Touch Solutions Inc Touch panel device
FR2968421B1 (en) 2010-12-01 2013-04-05 St Microelectronics Rousset CAPACITIVE TOUCH SURFACE CONFIGURED TO MAKE PROXIMITY DETECTION
FR2968487B1 (en) * 2010-12-01 2012-12-21 St Microelectronics Rousset DIRECTIONAL DETECTION DEVICE FOR CAPACITIVE PROXIMITY
FR2968488B1 (en) 2010-12-01 2012-12-21 St Microelectronics Rousset METHOD FOR CONTROLLING A CAPACITIVE TOUCH SURFACE
CN102654798A (en) * 2011-03-03 2012-09-05 宸鸿光电科技股份有限公司 Touch sensing device and manufacturing method thereof
TWI447627B (en) 2011-03-15 2014-08-01 Mstar Semiconductor Inc Touch sensing devices
CN102681712B (en) * 2011-03-18 2016-08-24 宸鸿科技(厦门)有限公司 Contactor control device and manufacture method thereof
JP5168377B2 (en) * 2011-03-24 2013-03-21 大日本印刷株式会社 Touch panel sensor and method for manufacturing touch panel sensor
CN102707823B (en) * 2011-03-28 2016-07-06 晨星软件研发(深圳)有限公司 Touch control sensor
JP2012238066A (en) * 2011-05-10 2012-12-06 Japan Display East Co Ltd Capacitive touch panel and display device
CN102799296A (en) * 2011-05-26 2012-11-28 胜华科技股份有限公司 Touch sensing device and manufacture method thereof
CN102799295A (en) * 2011-05-26 2012-11-28 胜华科技股份有限公司 Touch device and touch display device
CN103324337B (en) * 2011-05-26 2017-02-08 胜华科技股份有限公司 Touch device and touch display device
CN102799294A (en) * 2011-05-26 2012-11-28 胜华科技股份有限公司 Touch device
DE102011078077A1 (en) * 2011-06-24 2012-12-27 Ident Technology Ag Printed circuit board with electrode configuration of a capacitive sensor
CN102855013A (en) * 2011-06-30 2013-01-02 联胜(中国)科技有限公司 Touch device and touch display device
JP5748274B2 (en) * 2011-07-08 2015-07-15 株式会社ワコム Position detection sensor, position detection device, and position detection method
TW201310291A (en) * 2011-08-17 2013-03-01 Wintek Corp Touch display panel
CN102955603B (en) * 2011-08-17 2016-05-25 宸鸿科技(厦门)有限公司 Contact panel and manufacture method thereof
CN102999199B (en) * 2011-09-16 2016-08-10 宸鸿科技(厦门)有限公司 Touch sensing device and electronic installation
JP5617811B2 (en) * 2011-10-05 2014-11-05 三菱電機株式会社 Touch screen, touch panel, and display device including the same
CN103049120A (en) * 2011-10-13 2013-04-17 宸鸿科技(厦门)有限公司 Touch control device structure and manufacture method thereof
JP5667960B2 (en) * 2011-10-14 2015-02-12 株式会社ジャパンディスプレイ Display device, touch detection device, and electronic device
CN103076907B (en) * 2011-10-26 2016-04-06 宸鸿科技(厦门)有限公司 Contactor control device and manufacture method thereof
WO2013088655A1 (en) * 2011-12-16 2013-06-20 パナソニック株式会社 Touch panel and electronic device
JP2015057678A (en) * 2012-01-12 2015-03-26 シャープ株式会社 Touch panel and display divice with touch panel
US9262021B2 (en) * 2012-04-11 2016-02-16 Synaptics Incorporated Two layer capacitive sensor
JP5718282B2 (en) * 2012-05-31 2015-05-13 株式会社東海理化電機製作所 Capacitance detection device
CN102830849B (en) * 2012-09-07 2015-08-19 京东方科技集团股份有限公司 Touch liquid crystal display device, touch LCD display panel and color membrane substrates
CN102830848B (en) * 2012-09-07 2015-12-02 京东方科技集团股份有限公司 Touch liquid crystal display device, display panels, array base palte and color membrane substrates
KR101474064B1 (en) * 2012-09-11 2014-12-17 엘지디스플레이 주식회사 Touch screen panel for display device
JP2015222457A (en) * 2012-09-19 2015-12-10 アルプス電気株式会社 Capacitance sensor
KR20140038822A (en) * 2012-09-21 2014-03-31 삼성전기주식회사 A raw glass plate for manufacturing a touch panel and method for manufacturing touch panel using the same
JP5930061B2 (en) * 2012-10-29 2016-06-08 シャープ株式会社 Touch panel
CN102929470A (en) * 2012-11-21 2013-02-13 南京华显高科有限公司 Method and structure for improving anti-interference of capacitive touch screen
JP5699357B2 (en) * 2012-12-25 2015-04-08 大日本印刷株式会社 Touch panel sensor and method for manufacturing touch panel sensor
US9417740B2 (en) * 2013-01-03 2016-08-16 Nokia Technologies Oy Capacitive sensing apparatus with a shield electrode
JP2014132415A (en) * 2013-01-07 2014-07-17 Tokai Rika Co Ltd Touch type input device
JP6086380B2 (en) * 2013-01-15 2017-03-01 Nltテクノロジー株式会社 Touch panel and display device having touch panel
CN103092414B (en) * 2013-01-17 2015-12-02 北京京东方光电科技有限公司 A kind of external hanging type touch-screen and preparation method thereof, display device
JP5750466B2 (en) 2013-03-04 2015-07-22 アルプス電気株式会社 Capacitive input device
DE102013104640A1 (en) * 2013-05-06 2014-11-06 Polyic Gmbh & Co. Kg Layer electrode for touch screen
DE102013104644B4 (en) 2013-05-06 2020-06-04 Polylc Gmbh & Co. Kg Layer electrode for touch screens
JP5931005B2 (en) * 2013-06-03 2016-06-08 アルプス電気株式会社 Input device
JP6133732B2 (en) * 2013-09-04 2017-05-24 アルプス電気株式会社 Input device and detection method thereof
KR102130592B1 (en) * 2013-09-09 2020-07-06 엘지전자 주식회사 Touch panel and method for manufacturing conductive layer for touch panel
US9516954B2 (en) * 2013-09-11 2016-12-13 GE Lighting Solutions, LLC Showcase member with direct-mounted LED light source
GB2518627A (en) * 2013-09-25 2015-04-01 Nokia Technologies Oy An apparatus
KR101641690B1 (en) 2013-09-25 2016-07-21 엘지디스플레이 주식회사 Display device with integrated touch screen
JP6184317B2 (en) * 2013-12-24 2017-08-23 アルプス電気株式会社 Input device
CN105094473A (en) * 2014-05-20 2015-11-25 晨星半导体股份有限公司 Touch device and method, and method for forming touch device
CN106662941A (en) * 2014-07-03 2017-05-10 夏普株式会社 Touch panel substrate
KR101638336B1 (en) * 2014-07-24 2016-07-12 엘지디스플레이 주식회사 Display device having touch panel
US9285913B1 (en) 2014-12-31 2016-03-15 Lg Display Co., Ltd. Display device and driving method thereof
CN104615318A (en) * 2015-01-23 2015-05-13 深圳市华星光电技术有限公司 Touch screen and terminal provided with same
CN104793828B (en) * 2015-05-08 2018-12-11 上海天马微电子有限公司 array substrate, display panel and display device
KR20170004068A (en) * 2015-07-01 2017-01-11 엘지전자 주식회사 Mobile terminal
JP6578020B2 (en) * 2015-12-28 2019-09-18 アルプスアルパイン株式会社 Input device
CN108780368A (en) * 2016-03-03 2018-11-09 三菱电机株式会社 Touch screen, touch panel, display device and electronic equipment
JP6208314B2 (en) * 2016-11-01 2017-10-04 三菱電機株式会社 Touch panel and display device
JPWO2018190008A1 (en) * 2017-04-14 2020-02-20 パナソニックIpマネジメント株式会社 Touch sensor
TWI629624B (en) * 2017-08-25 2018-07-11 友達光電股份有限公司 Panel having electrostatic protection structure
JP2017212015A (en) * 2017-09-06 2017-11-30 三菱電機株式会社 Touch panel
JP2020095309A (en) * 2018-12-10 2020-06-18 株式会社ジャパンディスプレイ Display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847354B2 (en) * 2000-03-23 2005-01-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Three dimensional interactive display
US20070030019A1 (en) * 2005-08-04 2007-02-08 Micron Technology, Inc. Power sink for IC temperature control

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371746A (en) * 1978-01-05 1983-02-01 Peptek, Incorporated Edge terminations for impedance planes
US5149919A (en) * 1990-10-31 1992-09-22 International Business Machines Corporation Stylus sensing system
US5457289A (en) * 1994-03-16 1995-10-10 Microtouch Systems, Inc. Frontally shielded capacitive touch sensor system
US5548306A (en) * 1994-04-28 1996-08-20 At&T Global Information Solutions Company Visible and touchable touch screen shield
US5998822A (en) * 1996-11-28 1999-12-07 Nippon Steel Semiconductor Corp. Semiconductor integrated circuit and a method of manufacturing the same
US7030860B1 (en) 1999-10-08 2006-04-18 Synaptics Incorporated Flexible transparent touch sensing system for electronic devices
JP2001210729A (en) * 2000-01-24 2001-08-03 Nec Corp Semiconductor storage and its manufacturing method
US7387619B2 (en) * 2001-09-04 2008-06-17 Aluvo Co., Ltd. Capacitance coupled sensor and substance detecting method using capacitance-coupled sensor
US7339579B2 (en) * 2003-12-15 2008-03-04 3M Innovative Properties Company Wiring harness and touch sensor incorporating same
JP4435622B2 (en) * 2004-05-25 2010-03-24 アルプス電気株式会社 Capacitance type detection device
JP4531469B2 (en) * 2004-07-15 2010-08-25 株式会社フジクラ Capacitive proximity sensor
CN101238244B (en) * 2005-01-24 2011-03-30 株式会社昭和 Process for producing crystalline titanium oxide coating film through electrolytic anodizing
JP4591157B2 (en) * 2005-03-31 2010-12-01 パナソニック株式会社 Wiring board, input device using the same, and manufacturing method thereof
DE202005012636U1 (en) * 2005-08-11 2006-12-28 Brose Fahrzeugteile Gmbh & Co. Kommanditgesellschaft, Coburg anti-pinch
US8013943B2 (en) * 2006-03-08 2011-09-06 Sharp Kabushiki Kaisha Display device
JP4721059B2 (en) * 2006-07-19 2011-07-13 株式会社デンソー Vehicle seat device and manufacturing method thereof
JP2008090623A (en) * 2006-10-02 2008-04-17 Sharp Corp Display unit, drive unit thereof, and driving method
JP5008026B2 (en) * 2007-01-30 2012-08-22 ソニーモバイルディスプレイ株式会社 Display device with input function
JP4453710B2 (en) * 2007-03-19 2010-04-21 セイコーエプソン株式会社 Liquid crystal device, electronic apparatus and position detection method
JP2009086240A (en) * 2007-09-28 2009-04-23 Citizen Holdings Co Ltd Liquid crystal module
WO2009044920A1 (en) * 2007-10-04 2009-04-09 Fujikura Ltd. Capacitive proximity sensor and proximity detection method
JP5138529B2 (en) * 2008-10-03 2013-02-06 株式会社ジャパンディスプレイイースト Touch panel
JP5113773B2 (en) * 2009-01-20 2013-01-09 株式会社ジャパンディスプレイイースト Display device
JP5300640B2 (en) * 2009-07-27 2013-09-25 株式会社ジャパンディスプレイウェスト Capacitance type input device and electro-optical device with input device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847354B2 (en) * 2000-03-23 2005-01-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Three dimensional interactive display
US20070030019A1 (en) * 2005-08-04 2007-02-08 Micron Technology, Inc. Power sink for IC temperature control

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US20130271425A1 (en) 2013-10-17
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US20110018560A1 (en) 2011-01-27
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US8836346B2 (en) 2014-09-16
US9778805B2 (en) 2017-10-03

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