US20170127360A1 - Power amplifying apparatus and method using same - Google Patents
Power amplifying apparatus and method using same Download PDFInfo
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- US20170127360A1 US20170127360A1 US14/927,968 US201514927968A US2017127360A1 US 20170127360 A1 US20170127360 A1 US 20170127360A1 US 201514927968 A US201514927968 A US 201514927968A US 2017127360 A1 US2017127360 A1 US 2017127360A1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/04—TPC
- H04W52/52—TPC using AGC [Automatic Gain Control] circuits or amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/534—Transformer coupled at the input of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
Definitions
- a radio frequency (RF) power amplifier has a variety of applications in the field of wireless data communications.
- an RF signal transmitter of a mobile telecommunications device is implemented by using the RF power amplifier.
- LTE long-term evolution
- W-CDMA wideband code division multiple access
- DPD digital predistortion
- FIG. 1 illustrates a simplified schematic block diagram of a cellular mobile system in accordance with a representative embodiment.
- FIG. 2 illustrates a schematic view of an RF power amplifier in accordance with an embodiment.
- FIG. 3 shows a schematic view of an RF power amplifier in accordance with an embodiment.
- FIG. 4 illustrates a schematic view of an RF power amplifier with a plurality of output stage amplifying circuits in accordance with an embodiment of the present teachings.
- FIG. 5 illustrates a schematic view of an RF power amplifier with alternative counterpart waveform generator in accordance with an embodiment of the present teachings.
- FIG. 6 illustrates a flow chart of a method for amplifying a power signal in accordance with an embodiment of the present teachings.
- FIG. 7A represents a frequency spectrum of an RF input signal which is inputted to an amplifying transistor in general.
- FIG. 7B shows a frequency spectrum of an RF waveform caused by an amplifying transistor in general.
- FIG. 8 shows a schematic view of an RF power amplifier without a counterpart waveform generator.
- FIG. 9 depicts a schematic view of an equivalent circuit of the RF amplifier structure of FIG. 8 in view of its frequency component F C .
- FIGS. 10A and 10B illustrate results of continuous wave (CW) simulation and 2-tone simulation performed with 40 MHz of tone spacing on RF power amplifiers.
- FIGS. 11A and 11B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier without the counterpart waveform generator.
- FIGS. 12A and 12B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier with the counterpart waveform.
- a device may include a single or plural devices.
- first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present teachings.
- FIG. 1 a cellular mobile system in accordance with an embodiment of the present teachings is explained with reference to FIG. 1 .
- FIG. 1 illustrates a simplified schematic block diagram of a cellular mobile system in accordance with a representative embodiment.
- the cellular mobile system 1 may be at least a portion of a wireless communications system which is implemented to support standards for wireless communication such as 3G WCDMA, 4G LTE, etc.
- the cellular mobile system 1 may comprise an RF signal transmitter 10 .
- another component 11 within the purview of one of ordinary skill in the art may be incorporated into the cellular mobile system 1 without departing from the scope of the present teachings.
- Such component 11 may be a power source, a display, an interface, a keyboard, an audio/video subsystem, and/or any other component for enabling the cellular mobile system 1 to function as e.g., a mobile phone.
- the RF signal transmitter 10 may comprise an RF power amplifier 100 and an antenna 110 . Further, in various embodiments, the RF signal transmitter 10 may further comprise an additional component 120 , which may include, but is not limited to, a transmission line for transferring the RF signal, an impedance matching network for the antenna and/or a filter for filtering e.g., noises transferred together with the RF signal, or a combination thereof.
- an additional component 120 may include, but is not limited to, a transmission line for transferring the RF signal, an impedance matching network for the antenna and/or a filter for filtering e.g., noises transferred together with the RF signal, or a combination thereof.
- the RF power amplifier 100 is configured to output an RF signal.
- the RF power amplifier 100 may comprise one of RF power amplifiers 100 a , 100 b , 100 c , 100 d and their variants shown in subsequent drawings in FIGS. 2 to 4 .
- the RF power amplifiers 100 a , 100 b , 100 c , 100 d and their variants will be discussed later.
- the antenna 110 is configured to transmit the RF signal wirelessly.
- FIG. 2 illustrates a schematic view of an RF power amplifier in accordance with an embodiment of the present teachings.
- the RF power amplifier 100 a may be an example of the RF power amplifier 100 discussed earlier with reference to FIG. 1 .
- the RF power amplifier 100 a may be a cellular power amplifier.
- the RF power amplifier 100 a as shown in FIG. 2 may comprise an output stage amplifying circuit 101 and a counterpart waveform generator 102 .
- the RF power amplifier 100 a may further comprise a compensation circuit 103 , a bias circuit 104 and/or an impedance matching circuit 105 (which may also be referred to as “input matching circuit” hereinafter).
- the output stage amplifying circuit 101 , the counterpart waveform generator 102 , the compensation circuit 103 , the bias circuit 104 and the input matching circuit 105 may be coupled electrically or magnetically as illustrated in FIG. 2 .
- the inter-connections between the circuits will be detailed later.
- the output stage amplifying circuit 101 may comprise an input node N 1 and an output node N out , and receive a waveform RF 1 through an input node N 1 and amplify the waveform RF 1 so as to output an RF signal (e.g., an amplified waveform RF out ) through an output node N out .
- the waveform RF 1 may be a modulated envelope waveform in a communication system employing envelope tracking.
- the output stage amplifying circuit 101 may comprise a transistor such as a bipolar junction transistor (BJT).
- the transistor may be a heterojunction bipolar transistor (HBT), a metal-oxide semiconductor FET (MOSFET), a high electron mobility transistor (HEMT), a pseudomorphic HEMT (pHEMT), a heterostructure FET (HFET), etc.
- HBT heterojunction bipolar transistor
- MOSFET metal-oxide semiconductor FET
- HEMT high electron mobility transistor
- pHEMT pseudomorphic HEMT
- HFET heterostructure FET
- the counterpart waveform generator 102 may be configured to generate a counterpart waveform in accordance with a specific portion of frequency components of the waveform RF 1 such that the counterpart waveform is adaptable to substantially compensate, cancel out or eliminate the specific portion of frequency components of the waveform RF 1 and to generate an output signal (e.g., an amplified waveform RF out ) that is substantially independent from the specific portion of frequency components of the waveform RF 1 .
- the counterpart waveform generator 102 may be configured such that a waveform RF 2 corresponding to the specific portion of frequency components of the waveform RF 1 is generated from the counterpart waveform generator 102 per se or from another component, e.g., the bias circuit 104 .
- substantially compensate may depend on the context and may not mean completely compensate, completely cancel or completely eliminate.
- signal “A” substantially cancels signal “B”
- a first order of the signal B may be canceled but a second order non-linearity portion of signal “B” may remain.
- frequency component F C The specific portion of frequency components of the waveform RF 1 will be detailed later in reference to FIG. 8B , and may also be referred to hereinafter as “frequency component F C ” for purposes of discussion. (In other words, the waveform RF 1 comprises the frequency component F C .)
- the counterpart waveform generator 102 and the output stage amplifying circuit 101 may be electrically coupled such that the waveform RF 2 is applied to the input node N 1 of the output stage amplifying circuit 101 to substantially compensate, cancel out or eliminate a portion of frequency components (e.g., the frequency component F C ) of the waveform RF 1 , as detailed later.
- the waveform RF 2 is applied to the input node N 1 of the output stage amplifying circuit 101 to substantially compensate, cancel out or eliminate a portion of frequency components (e.g., the frequency component F C ) of the waveform RF 1 , as detailed later.
- the counterpart waveform generator 102 may comprise an inductor L b .
- the inductor L b may be electrically coupled to the output stage amplifying circuit 101 (e.g., the input node N 1 thereof).
- the inductor L b may be configured to induce the waveform RF 2 from a magnetic coupling provided thereto.
- the inductor L b may be electrically coupled between the bias circuit 104 and the output stage amplifying circuit 101 (e.g., the input node N 1 thereof).
- the inductor L b may have an inductance whose value is set such that a portion of frequency components (e.g., the frequency component F C ) of the waveform RF 1 is substantially eliminated.
- the inductor L b of the counterpart waveform generator 102 may be electrically coupled to the bias circuit 104 and the output stage amplifying circuit 101 in different way from what is discussed above. Specifically, such inductor may be configured to generate an intermediate waveform that causes the bias circuit to output the waveform RF 2 .
- the counterpart waveform generator 102 may further comprise an additional component such as a capacitor, etc., which will be detailed later with reference to in an example shown in FIG. 5 .
- the compensation circuit 103 may be configured to receive the waveform RF 1 and substantially compensate a portion of frequency components (e.g., the frequency component F C ) of the waveform RF 1 provided thereto.
- the compensation circuit 103 may be configured to also receive the waveform RF 2 .
- the compensation circuit 103 may be an input terminal comprising the input node N 1 of the output stage amplifying circuit 101 .
- the compensation circuit 103 may be a portion of the output stage amplifying circuit 101 a or the bias circuit 104 a where mixing of the signals takes place.
- the bias circuit 104 may be configured to bias the output stage amplifying circuit 101 .
- the bias circuit 104 may be electrically coupled to the input node N 1 of the output stage amplifying circuit 101 . Such electrical coupling therebetween can be direct or indirect depending on embodiments.
- the input matching circuit 105 may be configured to perform impedance matching for the output stage amplifying circuit 101 .
- the input matching circuit 105 may be electrically coupled to the input node N 1 of the output stage amplifying circuit 101 .
- the input matching circuit 105 may comprise an inductor L match , and in such case, the magnetic coupling may be provided between the inductor L b and the inductor L match with a specific coefficient which is set such that a portion of frequency components (e.g., the frequency component F C ) of the waveform RF 1 is substantially eliminated.
- FIG. 3 shows a schematic view of an RF power amplifier in accordance with an embodiment of the present teachings.
- the RF power amplifier 100 b may be an example of the RF power amplifiers 100 , 100 a discussed above in reference with FIGS. 1 and 2 .
- the RF power amplifier 100 b may comprise an output stage amplifying circuit 101 a , a counterpart waveform generator 102 a , a bias circuit 104 a and an input matching circuit 105 a .
- the RF power amplifier 100 a may further comprise a resistor R b , a capacitor C 1 , an input port IN, an output port OUT and/or an output matching circuit 106 .
- the output stage amplifying circuit 101 a may be an example of the output stage amplifying circuit 101 discussed above with reference to FIG. 2 .
- the output stage amplifying circuit 101 a may comprise an amplifying transistor Q m .
- the amplifying transistor Q m is configured to receive e.g., a modulated RF signal (e.g., the modulated envelope waveform as discussed earlier) as the waveform RF 1 via one of its terminals and to output an amplified RF signal (e.g., an amplified waveform RF out ) as the signal RF out via another terminal thereof.
- the amplifying transistor Q m comprises terminals T m1 , T m2 , T m3 .
- the amplifying transistor Q m may be a bipolar junction transistor (BJT) such as a heterojunction bipolar transistor (HBT).
- BJT bipolar junction transistor
- HBT heterojunction bipolar transistor
- the terminals T m1 , T m2 , T m3 are a base, a collector and an emitter, respectively.
- the base T m1 is electrically connected to the node N 1 to receive the waveform RF 1 .
- the base T m1 is the node N 1 per se.
- the collector T m2 outputs therethrough the amplified RF signal.
- the emitter T m3 is electrically coupled to the ground potential.
- other amplifying transistors may be employed and the interconnection may differ from the embodiment shown in FIG. 3 .
- the input matching circuit 105 a may be an example of the impedance matching circuit 105 discussed above with reference to FIG. 2 .
- the input matching circuit 105 a is configured to perform impedance matching on the amplifying transistor Q m .
- the impedance matching circuit 105 a may comprise a node N 2 and an inductor L match which is electrically coupled to a ground potential.
- the electrical path P 1 shown in FIG. 3 may refer to a series of components and/or electrical couplings therebetween which are provided to transmit the modulated RF signal to the amplifying transistor Q m .
- the electrical path P 1 may cover the nodes N 1 , N 2 and the capacitor C 1 , and is electrically coupled to (or further cover) the terminal T m1 of the amplifying transistor Q m .
- the electrical path P 2 shown in FIG. 3 may refer to a series of components and/or electrical couplings therebetween which are provided to transmit a bias voltage V cc and/or a waveform RF 2 to the terminal T m1 of the amplifying transistor Q m .
- the electrical path P 2 may cover the node N 1 , the resistor R b and an inductor L b , and is electrically coupled to (or further cover) the terminal T m1 of the amplifying transistor Q m .
- the node N 1 is provided on the electrical path P 1 , and serves as a portion of the compensation circuit 103 a which is an example of the compensation circuit 103 discussed above in reference to FIG. 2 .
- the node N 1 is electrically coupled between the terminal T m1 of the amplifying transistor Q m and the input matching circuit 105 a . Also, the node N 1 is disposed between the terminal T m1 of the amplifying transistor Q m and the node N 2 .
- the node N 2 is provided on the electrical path P 1 .
- the node N 2 is electrically coupled to the capacitor C 1 and the inductor L match of the input matching circuit 105 a.
- the capacitor C 1 for e.g., DC decoupling and matching, is provided as a passive capacitor on the electrical path while being electrically coupled between the nodes N 1 , N 2 .
- the bias circuit 104 a may be an example of the bias circuit 104 discussed above in reference to FIG. 2 .
- the bias circuit 104 a is configured to bias the amplifying transistor Q m via e.g., the node N 1 .
- the bias circuit 104 a is electrically coupled to the node N 1 via the electrical path P 2 .
- the bias circuit 104 a comprises input terminals T cc , T reg , an output terminal T out , a transistor Q b , a capacitor C 2 , diodes D and/or a resistor R 1 as shown in FIG. 3 .
- the input terminal T cc is configured to receive a bias voltage V cc
- the input terminal T reg is configured to receive a regulated voltage V reg
- the output terminal T out is electrically coupled to the node N 1 and/or the electrical path P 2 .
- the transistor Q b of the bias circuit 104 a comprises terminals T b1 , T b2 , T b3 .
- the terminal T b1 is electrically coupled to the capacitor C 2 , the diodes D and the resistor R 1 .
- the terminal T b2 is electrically coupled to the input terminal T cc and a terminal T b3 is electrically coupled to the output terminal T out of the bias circuit 104 a .
- the transistor Q b may be a BJT, such as an HBT.
- the terminals T b1 , T b2 , T b1 of the transistor Q b may be a base, a collector, and an emitter, respectively.
- the transistor Qb may not be a BJT but other types of transistor.
- the capacitor C 2 of the bias circuit 104 a may be electrically coupled to the terminal T b1 .
- the capacitor C 2 is electrically coupled between the terminal T b1 of the transistor Q b and the ground potential.
- the resistor R 1 of the bias circuit 104 a may be electrically coupled to the terminal T b1 .
- the resistor R 1 is electrically coupled between the terminal T b1 of the transistor Q b and the input terminal T reg .
- the counterpart waveform 102 a may be an example of the counterpart waveform 102 discussed above with reference to FIG. 2 .
- the counterpart waveform generator 102 a is configured to reduce the i.e., the frequency component F C of the waveform RF 1 swinging at the node N 1 .
- the counterpart waveform generator 102 a comprises an inductor L b .
- the inductor L b is electrically coupled between the bias circuit 104 a and the node N 1 .
- the inductor L b is disposed on the electrical path P 2 .
- the inductor L b has an inductance whose values is set such that the frequency component F C of the waveform RF 1 is reduced, and substantially eliminated.
- the inductor L b is configured to be magnetically coupled with the inductor L match of the input matching circuit 105 a.
- the inductor L b and the inductor L match are magnetically coupled with a preset coupling coefficient which is set such that that the frequency component F C ) of the waveform RF 1 is reduced, and substantially, eliminated.
- the inductors L b and L match may be a pair of coils magnetically coupled to each other while being arranged with a gap therebetween.
- the resistor R b for e.g., resistor ballasting, is provided to be electrically coupled between the inductor L b and the node N 1 .
- the capacitor C 1 is provided to be electrically coupled between the nodes N 1 , N 2 .
- the input port IN is provided to the RF power amplifier 100 b to receive an RF input signal (e.g., the modulated RF signal discussed above with reference to FIG. 2 ).
- the input port IN is electrically coupled to the node N 2 .
- the output port OUT is provided to the RF power amplifier to output an RF output signal (e.g., the modulated RF signal discussed above with reference to FIG. 2 ).
- the output port OUT is electrically coupled to the terminal T m2 of the amplifying transistor Q m via the output matching circuit 106 .
- FIG. 4 illustrates a schematic view of an RF power amplifier 100 c with a plurality of output stage amplifying circuits in accordance with an embodiment of the present teachings. For purposes of convenience in discussion, differences between the RF power amplifiers 100 b and 100 c are mainly explained herein.
- the output stage amplifying circuits 101 a - 1 to 101 a - n are electrically coupled in parallel while sharing the input port IN, the input matching circuit 105 a , a node N 2 , the counterpart waveform generator 102 a , the bias circuit 104 a , a node N out , the output matching circuit 106 and the output port OUT.
- the output stage amplifying circuits 101 a - 1 to 101 a - n may comprise amplifying transistors Qm-1 to Qm-n, respectively.
- Each of the amplifying transistors Qm-1 to Qm-n may be identical to the amplifying transistor Q m discussed above in reference to FIG. 3 in their structures and functions.
- the terminals T m1 -1 to T m1 -n of the amplifying transistors Q m -1 to Q m -n are electrically coupled to the node N 2 via the capacitors C 1 -1 to C 1 -n, respectively.
- the capacitors C 1 -1 to C 1 -n may be identical to the capacitor C 1 discussed above in reference to FIG. 3 in their structures and functions.
- the capacitors C 1 -1 to C 1 -n are provided for DC decoupling between the terminals T m1 -1 to T m1 -n.
- the terminals T m2 -1 to T m2 -n of the amplifying transistors Q m -1 to Q m -n are electrically coupled to the output port OUT through the node N out .
- the output matching circuit 106 may be electrically coupled between the node N out and the output port OUT, as shown in FIG. 4 .
- the terminals T m3 -1 to T m3 -n of the amplifying transistors Q m -1 to Q m -n are grounded.
- Nodes N 1 -1 to N 1 -n are electrically coupled between the capacitors C 1 -1 to C 1 -n and the terminals T m1 -1 to T m1 -n, respectively. Further, the counterpart waveform generator 102 a is electrically coupled to the nodes N 1 -n to N 1 -n via the resistors R 1 -1 to R 1 -n, respectively for base ballasting and preventing thermal run-away.
- FIG. 5 illustrates a schematic view of an RF power amplifier with alternative counterpart waveform generator in accordance with an embodiment of the present teachings.
- the counterpart waveform generator 102 b is electrically coupled to the capacitor C 2 and the diodes D in parallel between the terminal L b1 of the transistor Q b and the ground potential.
- the counterpart waveform generator 102 b may comprise an inductor L b ′ and a capacitor C 3 .
- the capacitor C 3 is electrically connected between the ground potential and the inductor L b ′ as a DC decoupling cap.
- the inductor L b ′ is electrically coupled between the capacitor C 3 and the terminal T b1 of the transistor Q b .
- the counterpart waveform generator 102 b may be configured to generate an intermediate waveform RF 2 ′ that causes the bias circuit 104 a to output the waveform RF 2 .
- the coefficient k′ of the magnetic coupling between them may have a different value from the coefficient k discussed above with reference to FIG. 3 depending on a given condition.
- the present teachings are not limited to the RF power amplifier and the apparatus using same.
- a device for use in an RF power amplifier is also within the present teachings.
- the device may comprise a first electrical path configured to transmit an RF signal to a terminal of an amplifying transistor of the RF power amplifier, the first electrical path comprising a first node and a second node, the first node being disposed between the terminal of the amplifying transistor and the second node; a second electrical path configured to transmit a bias voltage to the first terminal of the amplifying transistor, the second electrical path being electrically coupled to the first node; a first inductor electrically coupled between the second node and a ground potential; and a counterpart waveform generator configured to reduce a portion of frequency waveform of the RF signal swinging at the first node, wherein the counterpart waveform generator comprise a second inductor disposed on the second electrical path, and the first inductor and the second inductor are magnetically
- the coupling coefficient is set such that the portion of frequency waveform becomes zero.
- the magnetic coupling member may comprise a pair of coils magnetically coupled to each other with a gap therebetween, the coils being electrically coupled to the first inductor and the second inductor, respectively.
- the device may further comprise a capacitor electrically coupled between the first node and the second node; and a resistor electrically coupled between the second inductor and the first node.
- the first electrical path is electrically coupled to a bipolar junction transistor (BJT) as the amplifying transistor, the terminal thereof to which the RF signal is transmitted being a base of the BJT.
- BJT bipolar junction transistor
- the device may further comprise a bias circuit configured to bias the amplifying transistor, the bias circuit being electrically coupled to the first node via the second electrical path, wherein the bias circuit comprises a first input terminal configured to receive the bias voltage; a second input terminal configured to receive a regulated voltage; an output terminal electrically coupled to the second electrical path; an additional transistor comprising a first terminal, a second terminal electrically coupled to the first input terminal, and a third terminal electrically coupled to the output terminal; a capacitor electrically coupled between the first terminal of the additional transistor and the ground potential; and a resistor electrically coupled between the first terminal of the additional transistor and the second input terminal.
- the bias circuit comprises a first input terminal configured to receive the bias voltage; a second input terminal configured to receive a regulated voltage; an output terminal electrically coupled to the second electrical path; an additional transistor comprising a first terminal, a second terminal electrically coupled to the first input terminal, and a third terminal electrically coupled to the output terminal; a capacitor electrically coupled between the first terminal of the additional transistor and the ground
- FIG. 6 illustrates a flow chart of a method for amplifying a power signal in accordance with an embodiment of the present teachings.
- the method may comprise steps S 100 , S 200 and S 300 . It is noted that the steps and their sub-steps explained below are explained and illustrated in a certain order, however, such order is an example merely for purpose of explanation. The steps and the sub-steps can be performed at least partially in different order, and/or at the same time. They also can be repeated depending on the given power signal.
- an envelope modulated signal is amplified by using an output stage amplifying circuit (e.g., one of those discussed above).
- the envelope modulated signal comprises a carrier radio frequency portion and an envelope frequency component.
- impedance matching is also performed for the output stage amplifying circuit by using an impedance matching circuit (e.g., one of those discussed above) which is electrically coupled to the output stage amplifying circuit.
- the impedance matching circuit comprises an additional inductor (e.g., one of those discussed above).
- a corresponding frequency waveform (e.g., the waveform RF 2 ) which corresponds to a portion of frequency components (e.g., the first frequency component F C ) of the envelope modulated signal (e.g., the first waveform RF 1 ) is generated.
- the corresponding frequency waveform is induced, by using an inductor (e.g., one of those discussed above), from a magnetic coupling provided to the inductor at this step S 200 .
- a coefficient of the magnetic coupling may be set such that the first frequency component of the envelope modulated signal is substantially eliminated.
- an inductance of the inductor may be set such that the first frequency component of the envelope modulated signal is substantially eliminated.
- the magnetic coupling is provided between the inductor for inducing the corresponding frequency waveform and the additional inductor of the impedance matching circuit.
- the corresponding frequency waveform is applied to the output stage amplifying circuit so as to generate a power output that is substantially independent of the first frequency component of the envelope modulated signal.
- the envelope frequency component is substantially eliminated such that the power output corresponds substantially to the carrier radio frequency portion of the envelope modulated signal.
- a specific portion of the frequency components of the waveform RF 1 i.e., the frequency component F C discussed above
- the waveform RF 1 refers to the signal transmitted through the node N 1 (or the nodes N 1 -1 to N 1 -n) and amplified by the output stage amplifying circuit.
- the waveform RF 1 comprises an envelope-modulated RF signal, especially for the cellular power amplifier.
- This signal corresponds to an RF (carrier) frequency component F A in FIG. 7A showing a frequency spectrum of an RF input signal which is inputted to an amplifying transistor in general.
- the waveform RF 1 may further comprise another frequency component for some reasons.
- FIG. 7B shows a frequency spectrum of an RF waveform caused by an amplifying transistor in general.
- the RF waveform caused by an amplifying transistor comprises a carrier frequency component F B , which is desired to be transmitted as an output signal.
- second order nonlinearity of the RF power amplifier causes intermodulation components such as frequency components F C and F D .
- the frequency component located at lower domain than that of the RF carrier frequency component F B in FIG. 7B is transmitted through the terminal T m1 and the node N 1 .
- This frequency component existing as the portion of frequency components of the waveform RF 1 at the node N 1 is what is referred to above as the frequency component F C . While at least a portion of frequency components F C and F D outputted toward the output port OUT can be removed by e.g., a filter, such filter cannot remove the frequency component F C at the terminal T m1 and the node N 1 .
- the RF power amplifier For linear amplification, it is required that the RF power amplifier has a fixed bias voltage. However, in the presence of the frequency component F C , the bias voltage is modulated by frequency component F C , and then the RF power amplifier operates in different bias conditions depending on the frequency component F C . For example, as the envelope modulation signal bandwidth goes up, the frequency component F C starts to be distorted by resistive-capacitive (RC) delay between the capacitor C 1 and the amplifying transistor Q m . As a result, an RC delayed signal modulates the RF power amplifier and generates the memory effect.
- RC resistive-capacitive
- the memory effect may refer to a waveform distortion caused by a mutual relation between the nonlinear characteristics of the circuit and various frequency characteristics of the circuit.
- the RF power amplifier may behave as if an RF output signal therefrom is not determined by an RF input signal that is currently given, but by a series of RF input signals that have been received so far. Such behavior results in various outputs even for the same input, and, thus leads to degraded linearity (e.g., dispersed or spread output signals as shown in FIGS. 11A and 11B ).
- FIG. 8 shows a schematic view of an RF power amplifier 100 ′ which is similar to what is depicted in FIG. 3 except that the counterpart waveform generator 102 a shown in FIG. 3 does not exist. Then, by way of analysis, the given RF power amplifier 100 ′ is simplified as an equivalent circuit such as what is shown in FIG. 9 .
- FIG. 9 depicts a schematic view of an equivalent circuit of the RF amplifier structure of FIG. 8 in view of its frequency component F C .
- the equivalent circuit 100 ′′ shown in FIG. 9 comprises current sources I b , I m , capacitors C 1 , C 2 ′ and (constant) resistors R m , R b , R 1 ′.
- the equivalent circuit further comprises nodes N 1 to N 8 provided at least for the purpose of explanation.
- the capacitor C 1 may be electrically coupled between the nodes N 1 , N 2 .
- the node N 1 is also electrically coupled to the nodes N 3 , N 4
- the node N 2 is also electrically coupled to the ground potential.
- the amplifying transistor Q m in FIG. 8 is replaced by a corresponding circuit portion Q m ′ which comprises the nodes N 4 , N 6 , the current source I m and the resistor R m .
- the amplifying transistor Q m is a transistor, and its junction between terminals T m1 and T m3 (e.g., a base-emitter junction when the transistor is BJT) can be considered as a diode.
- the amplifying transistor Q m can be simplified into a nonlinear resistive component and a parasitic capacitive component which are electrically coupled in parallel.
- the parasitic capacitive component is not considerably big enough at the frequency range of the frequency component F C , it can be omitted, and thus, the amplifying transistor Q m can be further simplified into the resistor R m and the current source I m which come from the nonlinear resistive component.
- the resistor R m and the current source I m are electrically coupled to each other in parallel between the nodes N 3 , N 5 .
- the output stage amplifying circuit 101 a in FIG. 8 is replaced by a circuit portion 101 a ′ which comprises the circuit portion Q m ′ and the ground potential which are electrically coupled to each other in series.
- the transistor Q b of the bias circuit 104 a in FIG. 8 is substituted with a corresponding circuit portion Q b ′ which comprises the nodes N 3 , N 5 , the current source I b and the resistor R b .
- the resistor R b and the current source I b are electrically coupled to each other in parallel between the nodes N 3 and N 5 , as shown in FIG. 9 .
- the node N 5 is electrically connected to the node N 7 .
- the remaining components C 2 , D, R 1 of the bias circuit 104 a in FIG. 8 which are electrically coupled to the terminal T b1 of the transistor Q b as shown in FIG. 8 can be simplified into a corresponding circuit portion O b which comprises resistor R 1 ′, the capacitor C 2 ′ and the nodes N 7 , N 8 .
- the resistor R 1 ′ and the capacitor C 2 ′ which are electrically coupled to each other in parallel between the nodes N 7 , N 8 .
- the node N 8 is electrically connected to the ground potential.
- the bias circuit 104 a in FIG. 8 is replaced by a circuit portion 104 a ′ which comprises the circuit portions Q b ′ and O b and the ground potential which are electrically coupled to one another in series and in that order.
- the (shunt) inductor L match of the impedance matching circuit 105 a in FIG. 8 is considered as a short circuit at the frequency range of the envelope component F C . Accordingly, in the equivalent circuit in FIG. 9 , the impedance matching circuit 105 a is replaced by a circuit portion 105 a ′ which comprises the node N 2 electrically coupled to the ground potential. The capacitor C 1 is electrically coupled between the nodes N 1 and N 2 . In addition, the resistor R b in FIG. 8 is omitted in the equivalent circuit shown in FIG. 9 since its value is small enough to be ignored in this analysis.
- a node voltage at the node N 1 corresponds to the frequency component F C transmitted through the node N 1 (and the terminal T m1 ) in FIG. 3 . Since the frequency component F C is one of factors causing the memory effect as discussed above, reducing the node voltage V 1 corresponding to this frequency component can be an option to reduce the memory effect. Further, if possible, it can be considered to make the node voltage V 1 zero.
- V 7 Z Ob + V 1 Z Qm ′ I Im , where ⁇ ⁇ R m // C 1 ( 2 )
- V 7 denotes a node voltage at the node N 7 ;
- Z Ob denotes an impedance of the circuit portion O b ;
- R Rb denotes a resistance value of the resistor R b ;
- L Im denotes a current value of the current source I m ;
- Z Qm ′ denotes an impedance of the circuit portion Q m ′;
- I Im denotes a current value of the current source I m .
- V 1 Z Qm ′ Z Qm ′ + R Rb + Z Ob ⁇ ⁇ ( R Rb + Z Ob ) ⁇ I Im - R Rb ⁇ I Ib ⁇ ( 3 )
- Imag(Z Ob ) denotes an imaginary part of “Z Ob ”
- Real(Z Ob ) denotes an real part thereof.
- inductive signal injection technique is applied as shown in FIG. 3 and/or FIG. 5 .
- the inductors L match and L b are magnetically coupled with a specific coupling coefficient k.
- voltage swing at the inductor L match is applied to the inductor L b and the transistor Q b , which generates large current value I Ib .
- an optimum current value I Ib can be found to satisfy the equation (6).
- equations (5) and (6) are met by adding the inductor L b and by using the inductive signal injection technique as described above. As a result, the memory effect can be minimized.
- influence of the counterpart waveform generator which is obtained by the aforementioned analysis, on another frequency components F B and F D is not considerably large. Further, even in case where such influence is considerably large, it can be resolved by optimizing the configurations of the input matching circuit.
- FIGS. 10A and 10B illustrate results of continuous wave (CW) simulation and 2-tone simulation performed with 40 MHz of tone spacing on RF power amplifiers.
- an RF power amplifier without the counterpart waveform generator (e.g. the RF power amplifier 100 ′ as shown in FIG. 8 ) operates such that a bias voltage at the node N 1 in the entire frequency range of the waveform F C is compressed as the output power is increased. Then, represented by a curve B′ shown in FIG. 10B , the bias voltage at the node N 1 is also compressed at the time (25 ns) when the large RF input signal is applied.
- the bias voltage can be controlled from the compressed condition to boosted condition. After optimizing the amount of coupling, bias voltage is boosted.
- 2-tone simulation as shown in FIG. 10B shows that the fluctuation of the bias voltage is minimized which is optimal condition for reducing memory effect and thereby improving linearity of the entire RF power amplifier.
- FIGS. 11A and 11B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier without the counterpart waveform generator
- FIGS. 12A and 12B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier with the counterpart waveform generator discussed above. While, dots in FIGS. 11A and 11B are relatively dispersed in proportion to the amount of the memory effect, the RF power amplifier show less dispersion. The biggest differences in the memory effect are shown at low dynamic output power region in the AM-PM graphs.
- the protection circuit can be implemented in a variety of elements and variant structures. Further, the various elements, structures and parameters are included for purposes of illustrative explanation only and not in any limiting sense. In view of this disclosure, those skilled in the art may be able to implement the present teachings in determining their own applications and needed elements and equipment to implement these applications, while remaining within the scope of the appended claims.
- coefficient, interconnection between circuit blocks in various embodiments may improve linearity and may eliminate memory effect.
Abstract
Description
- A radio frequency (RF) power amplifier has a variety of applications in the field of wireless data communications. For example, an RF signal transmitter of a mobile telecommunications device is implemented by using the RF power amplifier.
- Throughout the generations of mobile telecommunications technology development, the RF power amplifier has been required to support increasingly wider modulation signal bandwidth in order to accommodate increasingly higher speed data communications. For instance, the specification of the long-term evolution (LTE), commonly marketed as 4G LTE, requires a signal bandwidth of up to 20 MHz, which is several times larger than what is required in 3G wideband code division multiple access (W-CDMA) technology.
- In designing a wideband RF power amplifier with a wider bandwidth, however, it tends to be more difficult to secure a required linearity within the entire range of the signal bandwidth due to various factors. Also, when discussing phenomena exhibited in relation to such factors, the concept of so-called ‘memory effect’ has been used.
- Several solutions have been introduced to secure the required linearity. For instance, certain RF power amplifiers have employed digital predistortion (DPD) technique. However, in case the memory effect becomes severe, the advantage of the DPD technique is limited even after nonlinearity is maximally compensated by the DPD technique.
- What is needed, therefore, is an apparatus and/or a method that overcomes at least the shortcomings of the RF power amplifier discussed above.
- The exemplary embodiments provided herein may be best understood when read with the accompanying drawings. It should be noted that various features depicted therein are not necessarily drawn to scale, for the sake of clarity and discussion. Wherever applicable and practical, like reference numerals refer to like elements.
-
FIG. 1 illustrates a simplified schematic block diagram of a cellular mobile system in accordance with a representative embodiment. -
FIG. 2 illustrates a schematic view of an RF power amplifier in accordance with an embodiment. -
FIG. 3 shows a schematic view of an RF power amplifier in accordance with an embodiment. -
FIG. 4 illustrates a schematic view of an RF power amplifier with a plurality of output stage amplifying circuits in accordance with an embodiment of the present teachings. -
FIG. 5 illustrates a schematic view of an RF power amplifier with alternative counterpart waveform generator in accordance with an embodiment of the present teachings. -
FIG. 6 illustrates a flow chart of a method for amplifying a power signal in accordance with an embodiment of the present teachings. -
FIG. 7A represents a frequency spectrum of an RF input signal which is inputted to an amplifying transistor in general. -
FIG. 7B shows a frequency spectrum of an RF waveform caused by an amplifying transistor in general. -
FIG. 8 shows a schematic view of an RF power amplifier without a counterpart waveform generator. -
FIG. 9 depicts a schematic view of an equivalent circuit of the RF amplifier structure ofFIG. 8 in view of its frequency component FC. -
FIGS. 10A and 10B illustrate results of continuous wave (CW) simulation and 2-tone simulation performed with 40 MHz of tone spacing on RF power amplifiers. -
FIGS. 11A and 11B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier without the counterpart waveform generator. -
FIGS. 12A and 12B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier with the counterpart waveform. - In the following detailed description, for purposes of explanation but not limitation, representative embodiments disclosing specific details are set forth in order to facilitate a better understanding of the present invention. However, it will be apparent to one having ordinary skill in the art having had the benefit of the present disclosure that other embodiments in accordance with the present teachings that depart from the specific details disclosed herein may still remain within the scope of the appended claims. Moreover, descriptions of well-known apparatuses and methods may be omitted so as not to obscure the description of the representative embodiments.
- It is to be understood that the terminology used herein is for purposes of describing particular embodiments only, and is not intended to be limiting. Any defined terms are in addition to the technical and scientific meanings of the defined terms as commonly understood and accepted in the technical field of the present invention.
- As used in the specification and appended claims, the terms “a,” “an” and “the” include both singular and plural referents, unless the context clearly dictates otherwise. Thus, for example, “a device” may include a single or plural devices.
- Although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present teachings.
- It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.).
- Hereinafter, a cellular mobile system in accordance with an embodiment of the present teachings is explained with reference to
FIG. 1 . -
FIG. 1 illustrates a simplified schematic block diagram of a cellular mobile system in accordance with a representative embodiment. Illustratively, the cellularmobile system 1 may be at least a portion of a wireless communications system which is implemented to support standards for wireless communication such as 3G WCDMA, 4G LTE, etc. - Referring to
FIG. 1 , the cellularmobile system 1 may comprise anRF signal transmitter 10. Further, in various embodiments,another component 11 within the purview of one of ordinary skill in the art may be incorporated into the cellularmobile system 1 without departing from the scope of the present teachings.Such component 11 may be a power source, a display, an interface, a keyboard, an audio/video subsystem, and/or any other component for enabling the cellularmobile system 1 to function as e.g., a mobile phone. - In accordance with a representative embodiment, the
RF signal transmitter 10 may comprise anRF power amplifier 100 and anantenna 110. Further, in various embodiments, theRF signal transmitter 10 may further comprise anadditional component 120, which may include, but is not limited to, a transmission line for transferring the RF signal, an impedance matching network for the antenna and/or a filter for filtering e.g., noises transferred together with the RF signal, or a combination thereof. - The
RF power amplifier 100 is configured to output an RF signal. TheRF power amplifier 100 may comprise one ofRF power amplifiers 100 a, 100 b, 100 c, 100 d and their variants shown in subsequent drawings inFIGS. 2 to 4 . TheRF power amplifiers 100 a, 100 b, 100 c, 100 d and their variants will be discussed later. Further, theantenna 110 is configured to transmit the RF signal wirelessly. - Meanwhile, an RF power amplifier in accordance with of an embodiment of the present teachings is discussed hereinafter in reference with
FIG. 2 . -
FIG. 2 illustrates a schematic view of an RF power amplifier in accordance with an embodiment of the present teachings. - Referring to
FIG. 2 , the RF power amplifier 100 a may be an example of theRF power amplifier 100 discussed earlier with reference toFIG. 1 . The RF power amplifier 100 a may be a cellular power amplifier. The RF power amplifier 100 a as shown inFIG. 2 may comprise an outputstage amplifying circuit 101 and acounterpart waveform generator 102. Optionally, in various embodiments, the RF power amplifier 100 a may further comprise acompensation circuit 103, abias circuit 104 and/or an impedance matching circuit 105 (which may also be referred to as “input matching circuit” hereinafter). - The output
stage amplifying circuit 101, thecounterpart waveform generator 102, thecompensation circuit 103, thebias circuit 104 and theinput matching circuit 105 may be coupled electrically or magnetically as illustrated inFIG. 2 . The inter-connections between the circuits will be detailed later. - The output
stage amplifying circuit 101 may comprise an input node N1 and an output node Nout, and receive a waveform RF1 through an input node N1 and amplify the waveform RF1 so as to output an RF signal (e.g., an amplified waveform RFout) through an output node Nout. For instance, the waveform RF1 may be a modulated envelope waveform in a communication system employing envelope tracking. In the embodiment shown inFIG. 2 , the outputstage amplifying circuit 101 may comprise a transistor such as a bipolar junction transistor (BJT). However, in another embodiment, other types of transistor such as a field effect transistor (FET) and/or specific types of the BJT and the FET within the purview of one of ordinary skill in the art may be incorporated into the outputstage amplifying circuit 101. For instance, the transistor may be a heterojunction bipolar transistor (HBT), a metal-oxide semiconductor FET (MOSFET), a high electron mobility transistor (HEMT), a pseudomorphic HEMT (pHEMT), a heterostructure FET (HFET), etc. - In the representative embodiment of
FIG. 2 , thecounterpart waveform generator 102 may be configured to generate a counterpart waveform in accordance with a specific portion of frequency components of the waveform RF1 such that the counterpart waveform is adaptable to substantially compensate, cancel out or eliminate the specific portion of frequency components of the waveform RF1 and to generate an output signal (e.g., an amplified waveform RFout) that is substantially independent from the specific portion of frequency components of the waveform RF1. For instance, thecounterpart waveform generator 102 may be configured such that a waveform RF2 corresponding to the specific portion of frequency components of the waveform RF1 is generated from thecounterpart waveform generator 102 per se or from another component, e.g., thebias circuit 104. The word “substantially compensate”, “substantially cancel”, and “substantially eliminate” may depend on the context and may not mean completely compensate, completely cancel or completely eliminate. For example, when signal “A” substantially cancels signal “B”, a first order of the signal B may be canceled but a second order non-linearity portion of signal “B” may remain. - The specific portion of frequency components of the waveform RF1 will be detailed later in reference to
FIG. 8B , and may also be referred to hereinafter as “frequency component FC” for purposes of discussion. (In other words, the waveform RF1 comprises the frequency component FC.) - In various embodiments, the
counterpart waveform generator 102 and the outputstage amplifying circuit 101 may be electrically coupled such that the waveform RF2 is applied to the input node N1 of the outputstage amplifying circuit 101 to substantially compensate, cancel out or eliminate a portion of frequency components (e.g., the frequency component FC) of the waveform RF1, as detailed later. - The
counterpart waveform generator 102 may comprise an inductor Lb. The inductor Lb may be electrically coupled to the output stage amplifying circuit 101 (e.g., the input node N1 thereof). The inductor Lb may be configured to induce the waveform RF2 from a magnetic coupling provided thereto. Further, the inductor Lb may be electrically coupled between thebias circuit 104 and the output stage amplifying circuit 101 (e.g., the input node N1 thereof). The inductor Lb may have an inductance whose value is set such that a portion of frequency components (e.g., the frequency component FC) of the waveform RF1 is substantially eliminated. - Alternatively, in other embodiments, the inductor Lb of the
counterpart waveform generator 102 may be electrically coupled to thebias circuit 104 and the outputstage amplifying circuit 101 in different way from what is discussed above. Specifically, such inductor may be configured to generate an intermediate waveform that causes the bias circuit to output the waveform RF2. In such case, thecounterpart waveform generator 102 may further comprise an additional component such as a capacitor, etc., which will be detailed later with reference to in an example shown inFIG. 5 . - The
compensation circuit 103 may be configured to receive the waveform RF1 and substantially compensate a portion of frequency components (e.g., the frequency component FC) of the waveform RF1 provided thereto. Thecompensation circuit 103 may be configured to also receive the waveform RF2. In the embodiment shown inFIG. 2 , thecompensation circuit 103 may be an input terminal comprising the input node N1 of the outputstage amplifying circuit 101. In other embodiments, thecompensation circuit 103 may be a portion of the outputstage amplifying circuit 101 a or thebias circuit 104 a where mixing of the signals takes place. - The
bias circuit 104 may be configured to bias the outputstage amplifying circuit 101. Thebias circuit 104 may be electrically coupled to the input node N1 of the outputstage amplifying circuit 101. Such electrical coupling therebetween can be direct or indirect depending on embodiments. - The
input matching circuit 105 may be configured to perform impedance matching for the outputstage amplifying circuit 101. Theinput matching circuit 105 may be electrically coupled to the input node N1 of the outputstage amplifying circuit 101. Theinput matching circuit 105 may comprise an inductor Lmatch, and in such case, the magnetic coupling may be provided between the inductor Lb and the inductor Lmatch with a specific coefficient which is set such that a portion of frequency components (e.g., the frequency component FC) of the waveform RF1 is substantially eliminated. - Next, an RF power amplifier in accordance with an embodiment is detailed hereinafter.
-
FIG. 3 shows a schematic view of an RF power amplifier in accordance with an embodiment of the present teachings. - As shown in
FIG. 3 , the RF power amplifier 100 b may be an example of theRF power amplifiers 100, 100 a discussed above in reference withFIGS. 1 and 2 . Referring toFIG. 3 , the RF power amplifier 100 b may comprise an outputstage amplifying circuit 101 a, acounterpart waveform generator 102 a, abias circuit 104 a and aninput matching circuit 105 a. Optionally, the RF power amplifier 100 a may further comprise a resistor Rb, a capacitor C1, an input port IN, an output port OUT and/or anoutput matching circuit 106. - The output
stage amplifying circuit 101 a may be an example of the outputstage amplifying circuit 101 discussed above with reference toFIG. 2 . The outputstage amplifying circuit 101 a may comprise an amplifying transistor Qm. The amplifying transistor Qm is configured to receive e.g., a modulated RF signal (e.g., the modulated envelope waveform as discussed earlier) as the waveform RF1 via one of its terminals and to output an amplified RF signal (e.g., an amplified waveform RFout) as the signal RFout via another terminal thereof. The amplifying transistor Qm comprises terminals Tm1, Tm2, Tm3. - In the embodiment shown in
FIG. 3 , the amplifying transistor Qm may be a bipolar junction transistor (BJT) such as a heterojunction bipolar transistor (HBT). In such case, the terminals Tm1, Tm2, Tm3 are a base, a collector and an emitter, respectively. The base Tm1 is electrically connected to the node N1 to receive the waveform RF1. As illustrated in the embodiment shown inFIG. 3 , the base Tm1 is the node N1 per se. The collector Tm2 outputs therethrough the amplified RF signal. The emitter Tm3 is electrically coupled to the ground potential. Alternatively, in other embodiments, other amplifying transistors may be employed and the interconnection may differ from the embodiment shown inFIG. 3 . - The
input matching circuit 105 a may be an example of theimpedance matching circuit 105 discussed above with reference toFIG. 2 . Theinput matching circuit 105 a is configured to perform impedance matching on the amplifying transistor Qm. Theimpedance matching circuit 105 a may comprise a node N2 and an inductor Lmatch which is electrically coupled to a ground potential. - The electrical path P1 shown in
FIG. 3 may refer to a series of components and/or electrical couplings therebetween which are provided to transmit the modulated RF signal to the amplifying transistor Qm. For this purpose, the electrical path P1 may cover the nodes N1, N2 and the capacitor C1, and is electrically coupled to (or further cover) the terminal Tm1 of the amplifying transistor Qm. - The electrical path P2 shown in
FIG. 3 may refer to a series of components and/or electrical couplings therebetween which are provided to transmit a bias voltage Vcc and/or a waveform RF2 to the terminal Tm1 of the amplifying transistor Qm. For this purpose, the electrical path P2 may cover the node N1, the resistor Rb and an inductor Lb, and is electrically coupled to (or further cover) the terminal Tm1 of the amplifying transistor Qm. - The node N1 is provided on the electrical path P1, and serves as a portion of the
compensation circuit 103 a which is an example of thecompensation circuit 103 discussed above in reference toFIG. 2 . The node N1 is electrically coupled between the terminal Tm1 of the amplifying transistor Qm and theinput matching circuit 105 a. Also, the node N1 is disposed between the terminal Tm1 of the amplifying transistor Qm and the node N2. - The node N2 is provided on the electrical path P1. The node N2 is electrically coupled to the capacitor C1 and the inductor Lmatch of the
input matching circuit 105 a. - The capacitor C1 for e.g., DC decoupling and matching, is provided as a passive capacitor on the electrical path while being electrically coupled between the nodes N1, N2.
- The
bias circuit 104 a may be an example of thebias circuit 104 discussed above in reference toFIG. 2 . Thebias circuit 104 a is configured to bias the amplifying transistor Qm via e.g., the node N1. For this, thebias circuit 104 a is electrically coupled to the node N1 via the electrical path P2. Thebias circuit 104 a comprises input terminals Tcc, Treg, an output terminal Tout, a transistor Qb, a capacitor C2, diodes D and/or a resistor R1 as shown inFIG. 3 . Specifically, the input terminal Tcc is configured to receive a bias voltage Vcc, and the input terminal Treg is configured to receive a regulated voltage Vreg. The output terminal Tout is electrically coupled to the node N1 and/or the electrical path P2. - The transistor Qb of the
bias circuit 104 a comprises terminals Tb1, Tb2, Tb3. The terminal Tb1 is electrically coupled to the capacitor C2, the diodes D and the resistor R1. The terminal Tb2 is electrically coupled to the input terminal Tcc and a terminal Tb3 is electrically coupled to the output terminal Tout of thebias circuit 104 a. In the embodiment shown inFIG. 3 , the transistor Qb may be a BJT, such as an HBT. In such case, the terminals Tb1, Tb2, Tb1 of the transistor Qb may be a base, a collector, and an emitter, respectively. In other embodiment, the transistor Qb may not be a BJT but other types of transistor. - The capacitor C2 of the
bias circuit 104 a may be electrically coupled to the terminal Tb1. For example, in the embodiment shown inFIG. 3 , the capacitor C2 is electrically coupled between the terminal Tb1 of the transistor Qb and the ground potential. Further, the resistor R1 of thebias circuit 104 a may be electrically coupled to the terminal Tb1. As shown inFIG. 3 , the resistor R1 is electrically coupled between the terminal Tb1 of the transistor Qb and the input terminal Treg. - The
counterpart waveform 102 a may be an example of thecounterpart waveform 102 discussed above with reference toFIG. 2 . Thecounterpart waveform generator 102 a is configured to reduce the i.e., the frequency component FC of the waveform RF1 swinging at the node N1. In the embodiment, thecounterpart waveform generator 102 a comprises an inductor Lb. - The inductor Lb is electrically coupled between the
bias circuit 104 a and the node N1. In the embodiment, the inductor Lb is disposed on the electrical path P2. The inductor Lb has an inductance whose values is set such that the frequency component FC of the waveform RF1 is reduced, and substantially eliminated. The inductor Lb is configured to be magnetically coupled with the inductor Lmatch of theinput matching circuit 105 a. - In the embodiment, the inductor Lb and the inductor Lmatch are magnetically coupled with a preset coupling coefficient which is set such that that the frequency component FC) of the waveform RF1 is reduced, and substantially, eliminated. For instance, the inductors Lb and Lmatch may be a pair of coils magnetically coupled to each other while being arranged with a gap therebetween. In such case, the coefficient of the magnetic coupling can be represented by using e.g., a coupling constant k (which is, in general, a value defined between zero and one while satisfying a certain equation, e.g., k=M·(La·Lb)1/2 where La and Lb denotes inductance of two coils and M denotes mutual inductance between them). The operations of the
counterpart waveform generator 102 a will be explained later in more detail. - As mentioned above, there may be one or more additional components in addition to the above explained components depending on embodiments. In the embodiment, for instance, the resistor Rb for e.g., resistor ballasting, is provided to be electrically coupled between the inductor Lb and the node N1. Also, the capacitor C1 is provided to be electrically coupled between the nodes N1, N2. Furthermore, the input port IN is provided to the RF power amplifier 100 b to receive an RF input signal (e.g., the modulated RF signal discussed above with reference to
FIG. 2 ). The input port IN is electrically coupled to the node N2. In addition, the output port OUT is provided to the RF power amplifier to output an RF output signal (e.g., the modulated RF signal discussed above with reference toFIG. 2 ). The output port OUT is electrically coupled to the terminal Tm2 of the amplifying transistor Qm via theoutput matching circuit 106. - In addition, the RF power amplifier may further comprise one or more additional of output stage amplifying circuits to obtain higher power for instance.
FIG. 4 illustrates a schematic view of anRF power amplifier 100 c with a plurality of output stage amplifying circuits in accordance with an embodiment of the present teachings. For purposes of convenience in discussion, differences between theRF power amplifiers 100 b and 100 c are mainly explained herein. - Referring to
FIG. 4 , the outputstage amplifying circuits 101 a-1 to 101 a-n are electrically coupled in parallel while sharing the input port IN, theinput matching circuit 105 a, a node N2, thecounterpart waveform generator 102 a, thebias circuit 104 a, a node Nout, theoutput matching circuit 106 and the output port OUT. - Specifically, the output
stage amplifying circuits 101 a-1 to 101 a-n may comprise amplifying transistors Qm-1 to Qm-n, respectively. Each of the amplifying transistors Qm-1 to Qm-n may be identical to the amplifying transistor Qm discussed above in reference toFIG. 3 in their structures and functions. - The terminals Tm1-1 to Tm1-n of the amplifying transistors Qm-1 to Qm-n are electrically coupled to the node N2 via the capacitors C1-1 to C1-n, respectively. The capacitors C1-1 to C1-n may be identical to the capacitor C1 discussed above in reference to
FIG. 3 in their structures and functions. The capacitors C1-1 to C1-n are provided for DC decoupling between the terminals Tm1-1 to Tm1-n. The terminals Tm2-1 to Tm2-n of the amplifying transistors Qm-1 to Qm-n are electrically coupled to the output port OUT through the node Nout. In various embodiments, theoutput matching circuit 106 may be electrically coupled between the node Nout and the output port OUT, as shown inFIG. 4 . The terminals Tm3-1 to Tm3-n of the amplifying transistors Qm-1 to Qm-n are grounded. - Nodes N1-1 to N1-n are electrically coupled between the capacitors C1-1 to C1-n and the terminals Tm1-1 to Tm1-n, respectively. Further, the
counterpart waveform generator 102 a is electrically coupled to the nodes N1-n to N1-n via the resistors R1-1 to R1-n, respectively for base ballasting and preventing thermal run-away. - Alternatively, the counterpart waveform generator in accordance with the present teaching can be implemented in another way. For instance,
FIG. 5 illustrates a schematic view of an RF power amplifier with alternative counterpart waveform generator in accordance with an embodiment of the present teachings. Thecounterpart waveform generator 102 b is electrically coupled to the capacitor C2 and the diodes D in parallel between the terminal Lb1 of the transistor Qb and the ground potential. Thecounterpart waveform generator 102 b may comprise an inductor Lb′ and a capacitor C3. The capacitor C3 is electrically connected between the ground potential and the inductor Lb′ as a DC decoupling cap. The inductor Lb′ is electrically coupled between the capacitor C3 and the terminal Tb1 of the transistor Qb. In the aforementioned configuration of thecounterpart waveform generator 102 b can also play almost same role as that of thecounterpart waveform generator 102 a shown inFIG. 3 except that, thecounterpart waveform generator 102 b may be configured to generate an intermediate waveform RF2′ that causes thebias circuit 104 a to output the waveform RF2. Further, the coefficient k′ of the magnetic coupling between them may have a different value from the coefficient k discussed above with reference toFIG. 3 depending on a given condition. - Meanwhile, the present teachings are not limited to the RF power amplifier and the apparatus using same. For instance, a device for use in an RF power amplifier is also within the present teachings. Such device may be implemented by using the components discussed above. For example, the device may comprise a first electrical path configured to transmit an RF signal to a terminal of an amplifying transistor of the RF power amplifier, the first electrical path comprising a first node and a second node, the first node being disposed between the terminal of the amplifying transistor and the second node; a second electrical path configured to transmit a bias voltage to the first terminal of the amplifying transistor, the second electrical path being electrically coupled to the first node; a first inductor electrically coupled between the second node and a ground potential; and a counterpart waveform generator configured to reduce a portion of frequency waveform of the RF signal swinging at the first node, wherein the counterpart waveform generator comprise a second inductor disposed on the second electrical path, and the first inductor and the second inductor are magnetically coupled with a preset coupling coefficient. The coupling coefficient is set such that the portion of frequency waveform becomes zero. The magnetic coupling member may comprise a pair of coils magnetically coupled to each other with a gap therebetween, the coils being electrically coupled to the first inductor and the second inductor, respectively. The device may further comprise a capacitor electrically coupled between the first node and the second node; and a resistor electrically coupled between the second inductor and the first node. The first electrical path is electrically coupled to a bipolar junction transistor (BJT) as the amplifying transistor, the terminal thereof to which the RF signal is transmitted being a base of the BJT. The device may further comprise a bias circuit configured to bias the amplifying transistor, the bias circuit being electrically coupled to the first node via the second electrical path, wherein the bias circuit comprises a first input terminal configured to receive the bias voltage; a second input terminal configured to receive a regulated voltage; an output terminal electrically coupled to the second electrical path; an additional transistor comprising a first terminal, a second terminal electrically coupled to the first input terminal, and a third terminal electrically coupled to the output terminal; a capacitor electrically coupled between the first terminal of the additional transistor and the ground potential; and a resistor electrically coupled between the first terminal of the additional transistor and the second input terminal.
- Meanwhile, a method in accordance with an embodiment of the present teachings is explained with reference to
FIG. 6 which illustrates a flow chart of a method for amplifying a power signal in accordance with an embodiment of the present teachings. - Referring to
FIG. 6 , the method may comprise steps S100, S200 and S300. It is noted that the steps and their sub-steps explained below are explained and illustrated in a certain order, however, such order is an example merely for purpose of explanation. The steps and the sub-steps can be performed at least partially in different order, and/or at the same time. They also can be repeated depending on the given power signal. - At step S100, an envelope modulated signal is amplified by using an output stage amplifying circuit (e.g., one of those discussed above). The envelope modulated signal comprises a carrier radio frequency portion and an envelope frequency component. In the method, impedance matching is also performed for the output stage amplifying circuit by using an impedance matching circuit (e.g., one of those discussed above) which is electrically coupled to the output stage amplifying circuit. The impedance matching circuit comprises an additional inductor (e.g., one of those discussed above).
- Meanwhile, at step S200, a corresponding frequency waveform (e.g., the waveform RF2) which corresponds to a portion of frequency components (e.g., the first frequency component FC) of the envelope modulated signal (e.g., the first waveform RF1) is generated. For example, the corresponding frequency waveform is induced, by using an inductor (e.g., one of those discussed above), from a magnetic coupling provided to the inductor at this step S200. For this, a coefficient of the magnetic coupling may be set such that the first frequency component of the envelope modulated signal is substantially eliminated. Also, an inductance of the inductor may be set such that the first frequency component of the envelope modulated signal is substantially eliminated. The magnetic coupling is provided between the inductor for inducing the corresponding frequency waveform and the additional inductor of the impedance matching circuit.
- Then, at step S300, the corresponding frequency waveform is applied to the output stage amplifying circuit so as to generate a power output that is substantially independent of the first frequency component of the envelope modulated signal. For instance, the envelope frequency component is substantially eliminated such that the power output corresponds substantially to the carrier radio frequency portion of the envelope modulated signal.
- Hereinafter, how the embodiments discussed above provide improved linearity is explained hereinafter in more detail.
- As discussed above, a specific portion of the frequency components of the waveform RF1 (i.e., the frequency component FC discussed above) is reduced, or substantially eliminated. This is done by generating a counterpart signal (i.e., the waveform RF2 and/or the corresponding frequency waveform referred to above) that is substantially similar to the frequency component of the waveform RF1.
- Here, the waveform RF1 refers to the signal transmitted through the node N1 (or the nodes N1-1 to N1-n) and amplified by the output stage amplifying circuit. As discussed above, the waveform RF1 comprises an envelope-modulated RF signal, especially for the cellular power amplifier. This signal corresponds to an RF (carrier) frequency component FA in
FIG. 7A showing a frequency spectrum of an RF input signal which is inputted to an amplifying transistor in general. - However, the waveform RF1 may further comprise another frequency component for some reasons.
FIG. 7B shows a frequency spectrum of an RF waveform caused by an amplifying transistor in general. Referring toFIG. 7B , the RF waveform caused by an amplifying transistor comprises a carrier frequency component FB, which is desired to be transmitted as an output signal. Also, second order nonlinearity of the RF power amplifier causes intermodulation components such as frequency components FC and FD. Especially, the frequency component located at lower domain than that of the RF carrier frequency component FB inFIG. 7B is transmitted through the terminal Tm1 and the node N1. This frequency component existing as the portion of frequency components of the waveform RF1 at the node N1 is what is referred to above as the frequency component FC. While at least a portion of frequency components FC and FD outputted toward the output port OUT can be removed by e.g., a filter, such filter cannot remove the frequency component FC at the terminal Tm1 and the node N1. - For linear amplification, it is required that the RF power amplifier has a fixed bias voltage. However, in the presence of the frequency component FC, the bias voltage is modulated by frequency component FC, and then the RF power amplifier operates in different bias conditions depending on the frequency component FC. For example, as the envelope modulation signal bandwidth goes up, the frequency component FC starts to be distorted by resistive-capacitive (RC) delay between the capacitor C1 and the amplifying transistor Qm. As a result, an RC delayed signal modulates the RF power amplifier and generates the memory effect.
- The memory effect may refer to a waveform distortion caused by a mutual relation between the nonlinear characteristics of the circuit and various frequency characteristics of the circuit. In the presence of the memory effect, the RF power amplifier may behave as if an RF output signal therefrom is not determined by an RF input signal that is currently given, but by a series of RF input signals that have been received so far. Such behavior results in various outputs even for the same input, and, thus leads to degraded linearity (e.g., dispersed or spread output signals as shown in
FIGS. 11A and 11B ). - In order to reduce and substantially minimize the memory effect, analysis of given circuits for amplifying an RF signal may be a prerequisite. The analysis may be demonstrated using the circuit shown in
FIG. 8 .FIG. 8 shows a schematic view of anRF power amplifier 100′ which is similar to what is depicted inFIG. 3 except that thecounterpart waveform generator 102 a shown inFIG. 3 does not exist. Then, by way of analysis, the givenRF power amplifier 100′ is simplified as an equivalent circuit such as what is shown inFIG. 9 . -
FIG. 9 depicts a schematic view of an equivalent circuit of the RF amplifier structure ofFIG. 8 in view of its frequency component FC. Theequivalent circuit 100″ shown inFIG. 9 comprises current sources Ib, Im, capacitors C1, C2′ and (constant) resistors Rm, Rb, R1′. The equivalent circuit further comprises nodes N1 to N8 provided at least for the purpose of explanation. - As shown in
FIG. 9 , the capacitor C1 may be electrically coupled between the nodes N1, N2. The node N1 is also electrically coupled to the nodes N3, N4, and the node N2 is also electrically coupled to the ground potential. - Further, the amplifying transistor Qm in
FIG. 8 is replaced by a corresponding circuit portion Qm′ which comprises the nodes N4, N6, the current source Im and the resistor Rm. Particularly, the amplifying transistor Qm is a transistor, and its junction between terminals Tm1 and Tm3 (e.g., a base-emitter junction when the transistor is BJT) can be considered as a diode. Accordingly, in a desired equivalent circuit, the amplifying transistor Qm can be simplified into a nonlinear resistive component and a parasitic capacitive component which are electrically coupled in parallel. However, the parasitic capacitive component is not considerably big enough at the frequency range of the frequency component FC, it can be omitted, and thus, the amplifying transistor Qm can be further simplified into the resistor Rm and the current source Im which come from the nonlinear resistive component. The resistor Rm and the current source Im are electrically coupled to each other in parallel between the nodes N3, N5. As a result, the outputstage amplifying circuit 101 a inFIG. 8 is replaced by acircuit portion 101 a′ which comprises the circuit portion Qm′ and the ground potential which are electrically coupled to each other in series. - Likewise, the transistor Qb of the
bias circuit 104 a inFIG. 8 is substituted with a corresponding circuit portion Qb′ which comprises the nodes N3, N5, the current source Ib and the resistor Rb. The resistor Rb and the current source Ib are electrically coupled to each other in parallel between the nodes N3 and N5, as shown inFIG. 9 . The node N5 is electrically connected to the node N7. - The remaining components C2, D, R1 of the
bias circuit 104 a inFIG. 8 , which are electrically coupled to the terminal Tb1 of the transistor Qb as shown inFIG. 8 can be simplified into a corresponding circuit portion Ob which comprises resistor R1′, the capacitor C2′ and the nodes N7, N8. The resistor R1′ and the capacitor C2′ which are electrically coupled to each other in parallel between the nodes N7, N8. The node N8 is electrically connected to the ground potential. As a result, thebias circuit 104 a inFIG. 8 is replaced by acircuit portion 104 a′ which comprises the circuit portions Qb′ and Ob and the ground potential which are electrically coupled to one another in series and in that order. - The (shunt) inductor Lmatch of the
impedance matching circuit 105 a inFIG. 8 is considered as a short circuit at the frequency range of the envelope component FC. Accordingly, in the equivalent circuit inFIG. 9 , theimpedance matching circuit 105 a is replaced by acircuit portion 105 a′ which comprises the node N2 electrically coupled to the ground potential. The capacitor C1 is electrically coupled between the nodes N1 and N2. In addition, the resistor Rb inFIG. 8 is omitted in the equivalent circuit shown inFIG. 9 since its value is small enough to be ignored in this analysis. - In the above equivalent circuit, a node voltage at the node N1 (hereinafter, also referred to as “V1”) corresponds to the frequency component FC transmitted through the node N1 (and the terminal Tm1) in
FIG. 3 . Since the frequency component FC is one of factors causing the memory effect as discussed above, reducing the node voltage V1 corresponding to this frequency component can be an option to reduce the memory effect. Further, if possible, it can be considered to make the node voltage V1 zero. - By using Ohm's law, the relationship between current and voltage in the equivalent circuit in
FIG. 9 can be described as following equations (1) and (2): -
- where “V7” denotes a node voltage at the node N7; “ZOb” denotes an impedance of the circuit portion Ob; “RRb” denotes a resistance value of the resistor Rb; “LIm” denotes a current value of the current source Im; and “ZQm′” denotes an impedance of the circuit portion Qm′; “IIm” denotes a current value of the current source Im.
- Then, the node voltage V1 is derived by combining two equations (1) and (2) as follows:
-
- In order to make the node voltage V1 zero in equation (3), the following equation (4) should be satisfied:
-
(R Rb +Z Ob)·I Im −R Rb ·I Ib=0 (4) - From equation (4), the two conditions are derived as conditions for making the node voltage V1 zero, as provided below:
-
Imag(Z Ob)=0 (5) -
(R Rb+Real(Z Ob))·I Im =R Rb ·I Ib (6) - where “Imag(ZOb)” denotes an imaginary part of “ZOb”; and “Real(ZOb)” denotes an real part thereof.
- In view of equations (5) and (6), however, the node voltage V1 cannot be zero from the
equivalent circuit 100″ inFIG. 9 because the circuit portion Ob is composed of the resistor R1 and the capacitor C2. In order to resolve this, the inductor Lb as shown inFIG. 3 is added. Then, Imaginary part of ZOb can be zero at the frequency range of the frequency component FC by optimizing its inductance value. - However, this solution may cause another problem that the inductor Lb blocks RF signal excursion from the output stage amplifying circuit to the bias circuit. Then, nonlinear mixing process in the transistor Qb is suppressed and thus, a resultant current from current source Ib is also reduced. Accordingly, equation (6) cannot be met and the frequency component FC and the memory effect cased thereby still remains.
- In order to resolve this, inductive signal injection technique is applied as shown in
FIG. 3 and/orFIG. 5 . For instance, the inductors Lmatch and Lb are magnetically coupled with a specific coupling coefficient k. Then, voltage swing at the inductor Lmatch is applied to the inductor Lb and the transistor Qb, which generates large current value IIb. By optimizing the coupling coefficient k, an optimum current value IIb can be found to satisfy the equation (6). As a result, equations (5) and (6) are met by adding the inductor Lb and by using the inductive signal injection technique as described above. As a result, the memory effect can be minimized. - In addition, influence of the counterpart waveform generator, which is obtained by the aforementioned analysis, on another frequency components FB and FD is not considerably large. Further, even in case where such influence is considerably large, it can be resolved by optimizing the configurations of the input matching circuit.
-
FIGS. 10A and 10B illustrate results of continuous wave (CW) simulation and 2-tone simulation performed with 40 MHz of tone spacing on RF power amplifiers. - As represented by a curve B shown in
FIG. 10A , an RF power amplifier without the counterpart waveform generator (e.g. theRF power amplifier 100′ as shown inFIG. 8 ) operates such that a bias voltage at the node N1 in the entire frequency range of the waveform FC is compressed as the output power is increased. Then, represented by a curve B′ shown inFIG. 10B , the bias voltage at the node N1 is also compressed at the time (25 ns) when the large RF input signal is applied. - Furthermore, as represented by curves C, C′ shown in
FIGS. 10A and 10B , when the inductor Lb is added to theRF power amplifier 100′ as shown inFIG. 8 without applying the inductive signal injection technique (e.g., the magnetic coupling between the inductors Lb and Lmatch), the bias voltage is further compressed as explained above. - Contrarily, as represented by curves A, A′ shown in
FIGS. 10A and 10B , when the magnetic coupling as well as the inductor Lb is added, the bias voltage can be controlled from the compressed condition to boosted condition. After optimizing the amount of coupling, bias voltage is boosted. Especially, 2-tone simulation as shown inFIG. 10B shows that the fluctuation of the bias voltage is minimized which is optimal condition for reducing memory effect and thereby improving linearity of the entire RF power amplifier. -
FIGS. 11A and 11B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier without the counterpart waveform generator, andFIGS. 12A and 12B show measured dynamic AM-AM and AM-PM characteristics of the RF power amplifier with the counterpart waveform generator discussed above. While, dots inFIGS. 11A and 11B are relatively dispersed in proportion to the amount of the memory effect, the RF power amplifier show less dispersion. The biggest differences in the memory effect are shown at low dynamic output power region in the AM-PM graphs. - In view of this disclosure, it is to be noted that the protection circuit can be implemented in a variety of elements and variant structures. Further, the various elements, structures and parameters are included for purposes of illustrative explanation only and not in any limiting sense. In view of this disclosure, those skilled in the art may be able to implement the present teachings in determining their own applications and needed elements and equipment to implement these applications, while remaining within the scope of the appended claims.
- Different aspects, embodiments or implementations may, but need not, yield one or more of the following advantages. For example, the coefficient, interconnection between circuit blocks in various embodiments may improve linearity and may eliminate memory effect.
Claims (20)
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