US20140306474A1 - Spring retained end effector contact pad - Google Patents
Spring retained end effector contact pad Download PDFInfo
- Publication number
- US20140306474A1 US20140306474A1 US13/861,737 US201313861737A US2014306474A1 US 20140306474 A1 US20140306474 A1 US 20140306474A1 US 201313861737 A US201313861737 A US 201313861737A US 2014306474 A1 US2014306474 A1 US 2014306474A1
- Authority
- US
- United States
- Prior art keywords
- contact pad
- end effector
- retaining
- spring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
- B25J15/0014—Gripping heads and other end effectors having fork, comb or plate shaped means for engaging the lower surface on a object to be transported
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S294/00—Handling: hand and hoist-line implements
- Y10S294/902—Gripping element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
Definitions
- the disclosure relates generally to wear-resistant composite structures, and more particularly to a composite end effector having a retaining spring for removably attaching a removable contact pad to the end effector.
- end effectors are adapted for lifting and moving the substrates. Since substrates can reach high temperatures during processing (e.g., >500° C.), end effectors generally are made from materials that exhibit good thermal stability and wear resistance at high temperatures. Examples of such materials include alumina, zirconia, silicon nitride, silicon carbide, and other ceramics.
- composite end effectors offer several advantages relative to one-piece end effectors, still they have shortcomings.
- the low thermal expansion and low tensile strength properties of ceramics relative to metals makes it difficult to achieve a secure, rigid connection between the two materials as is required for the construction of a composite end effector.
- Prior designs have employed threaded connections, press-fit pads, and retaining rings.
- threaded fasteners can impart stresses on ceramic contact pads during thermal cycling, which may result in cracking of the contact pads. Threaded fasteners may also become loose over time due to vibrations and/or thermal cycling. Press-fit pads typically cannot be made from ceramic are difficult to remove when replacement become necessary.
- An exemplary end effector in accordance with the present disclosure may include an end effector body, a contact pad pocket formed in the end effector body, a spring retaining pocket formed in the end effector body adjacent the contact pad pocket and extending to an edge of the end effector body, and a pair of through-holes extending from the spring retaining pocket to the contact pad pocket.
- the end effector may further include a contact pad seated within the contact pad pocket, the contact pad having at least one retaining channel formed therein, and a retaining spring having a pair of retaining arms extending from the retaining spring pocket through the through-holes and into the contact pad pocket.
- the retaining arms may extend at least partially into the at least one retaining channel of the contact pad and may thereby restrict movement of the contact pad.
- FIG. 1 is a perspective view illustrating an exemplary embodiment of an end effector in accordance with the present disclosure.
- FIG. 2 is an exploded perspective view illustrating a lift arm and a corresponding contact pad installation of the end effector shown in FIG. 1 .
- FIG. 3 is a cross-sectional view illustrating an exemplary contact pad for use with the end effector shown in FIG. 1 .
- FIG. 4 is an exploded perspective view illustrating the exemplary contact pad of FIG. 3 and a corresponding contact pad pocket of the end effector shown in FIG. 1 .
- FIG. 5 is a top view illustrating an exemplary retaining spring for use with the end effector shown in FIG. 1 .
- FIG. 6 is a detailed perspective view illustrating installation of the contact pad of FIG. 3 with the end effector shown in FIG. 1 , including the retaining spring in an uninstalled position.
- FIG. 7 is a top view illustrating a retaining spring pocket and a contact pad pocket of the end effector shown in FIG. 1 .
- FIG. 8 is a cross-sectional view taken along line 8 - 8 of FIG. 7 illustrating the contact pad pocket shown in FIG. 7 .
- FIG. 9 is a detailed perspective view illustrating a fully assembled contact pad installation in the end effector shown in FIG. 1 .
- FIG. 1 illustrates an exemplary embodiment of a composite end effector 10 in accordance with the present disclosure.
- terms such as “front,” “rear,” “top,” “bottom,” “right,” “left,” “up,” “down,” “inwardly,” “outwardly,” “lateral” and “longitudinal” will be used herein to describe the relative placement and orientation of components of the end effector 10 , each with respect to the geometry and orientation of the end effector 10 as it appears in FIG. 1 .
- Said terminology will include the words specifically mentioned, derivatives thereof, and words of similar import.
- the exemplary composite end effector 10 disclosed herein is configured for handling a variety of substrates, which in an exemplary embodiment includes silicon wafers. It will be appreciated by those of ordinary skill in the art that this particular configuration is disclosed by way of example only, and that the below-described arrangement for removably coupling the different components of the end effector 10 to one another may be similarly implemented in virtually any type of composite end effector configuration and, more generally, in other types of composite structures in which components that are formed of dissimilar materials must be coupled to one another. All such embodiments are contemplated and may be implemented without departing from the scope of the present disclosure.
- the end effector 10 may include a substantially planar, V-shaped end effector body portion 12 .
- the end effector body portion 12 may have a mounting portion 22 having a plurality of apertures 24 formed therethrough for facilitating attachment to a robotic arm, for example.
- a pair of laterally-spaced lift arms 26 and 28 may extend from the mounting portion 22 and may be adapted for engaging and lifting a substrate.
- a plurality of cutouts 30 may be formed in the end effector body portion 12 for reducing the overall weight of the end effector 10 , but this is not critical.
- the particular shape and configuration of the end effector body portion 12 is presented by way of example only and may be varied to suit a particular application.
- the end effector body portion 12 may be formed of any material that is suitably rigid, durable, and temperature-resistant (i.e., hot and/or cold resistant) for a particular application, such as supporting a hot silicon wafer that is disposed in close proximity to a top surface thereof while the wafer is being supported or moved by the end effector 10 .
- the end effector body portion 12 may be formed of various metals, plastics, ceramics, or composite materials that exhibit good thermal stability and wear resistance at temperatures below ⁇ 100° C. and up to and exceeding 500° C.
- the end effector 10 may further include a plurality of contact pad regions 13 , 15 , and 17 .
- a first contact pad region 13 is disposed in a forward segment of the base portion 22
- second and third contact pad regions 15 , 17 are disposed on respective lift arms 26 and 28 .
- the positioning of the contact pad regions 13 , 15 and 17 is such that contact pads disposed therein can engage and lift a substrate when the end effector 10 is moved.
- Each contact pad region 13 , 15 , and 17 may receive respective contact pads 16 , 18 , and 20 that are removably attached to the end effector body portion 12 as will be further described below.
- the exemplary end effector 10 includes three contact pad regions 13 , 15 , and 17 , but it will be appreciated that alternative end effector configurations may be implemented that include a greater or fewer number of contact pad installations as may be desired for a particular application.
- an end effector that is adapted for a “gripping” application i.e., for grasping workpieces
- FIG. 2 shows the exemplary contact pad region 15 located on the left lift arm 26 of the end effector body portion 12 shown in FIG. 1 .
- the contact pad regions 13 and 17 may be substantially the same as the contact pad region 15 , and it will therefore be understood that the following description of the contact pad region 15 may apply equally to the contact pad regions 13 and 17 .
- the contact pad region 15 may include the contact pad 18 (introduced above), a contact pad pocket 30 , a retaining spring 32 , and a spring pocket 34 , each of which will now be described in-turn.
- the contact pad 18 may be a substantially cylindrical member including an annular retaining channel 36 formed in a sidewall 37 thereof, and a locating cavity 38 formed in a bottom portion thereof, the purposes of which will be described below.
- the contact pad 18 may additionally include a convex, top surface 40 for directly engaging a substrate positioned thereon, but this shape is not critical.
- the top surface 40 of the contact pad 18 may be flat, peaked (i.e. cone-shaped), irregular, or may feature a plurality of protrusions for engaging a workpiece.
- the contact pad 18 is shown as having a circular cross-sectional shape, but it is contemplated that the contact pad 18 may alternatively have a cross-sectional shape that is rectangular, triangular, oval, irregular, etc. It is further contemplated that instead of having a single, annular retaining channel 36 , the contact pad 18 may have two separate, diametrically-opposite retaining channels formed in its sidewall 37 as will become apparent below.
- the contact pad 18 may be formed of any material that is suitably rigid, durable, and temperature-resistant for a particular application, such as directly engaging a bottom surface of a hot substrate while the substrate is being supported or moved by the end effector 10 .
- the contact pad 18 may be formed of various metals, plastics, ceramics, or composite materials that exhibit good thermal stability and wear resistance at temperatures below 100° C. and up to and exceeding 500° C.
- the contact pad 18 is made from a ceramic material.
- the contact pad pocket 30 may be a cavity formed in the top surface of the left lift arm 26 .
- the contact pad pocket 30 may have a tapered-oblong shape defined by opposing sidewalls 42 and 44 that converge as they extend away from an outer edge 45 ( FIG. 1 ) of the left lift arm 26 .
- the rounded end 47 of the contact pad pocket 30 nearest the outer edge 45 of the left lift arm 26 (hereinafter referred to as “the proximal end”) may have a radius that is slightly greater than the radius of the contact pad 18 , and may have a depth “D” ( FIG. 8 ) that is less than the total height “H” ( FIG. 3 ) of the contact pad 18 .
- the contact pad pocket 30 may further include opposing undercuts 46 and 48 formed in the sidewalls 42 and 44 , respectively, for receiving first and second retaining arms 60 and 62 of retaining spring 32 as further described below.
- a cylindrical locating post 54 having a diameter and a height configured to be received in the locating cavity 38 of the contact pad 18 may extend upwardly from a bottom surface 55 of the proximal end of the contact pad pocket 30 .
- the locating post 54 may thus be adapted for matingly engaging the locating cavity 38 of the contact pad 18 as further described below.
- the contact pad 18 When the end effector 10 is fully assembled, the contact pad 18 may be seated within the proximal end of the contact pad pocket 30 (as best shown in FIG. 6 ), with the locating post 54 of the contact pad pocket 30 extending into the locating cavity 38 of the contact pad 18 .
- the locating post 54 thereby secures the contact pad 18 against lateral movement within the contact pad pocket 30 and further prevents the contact pad 18 from being installed in the contact pad pocket 30 in an upside-down orientation.
- the sidewall 37 of the contact pad 18 may be disposed in a close clearance relationship with the sidewalls 42 and 44 , the retaining channel 36 may be vertically aligned with the undercuts 46 and 48 , and the top surface 40 of the contact pad 18 may extend above the top surface of the end effector body portion 12 .
- the locating cavity 38 and locating post 54 are shown in FIGS. 3 and 4 as being substantially cylindrical in shape, but it is contemplated that the locating cavity 38 and locating post 54 may have any shape or configuration that facilitates mating engagement therebetween for securing the lateral position of the contact pad 18 within the contact pad pocket 30 .
- the contact pad 18 may include a plurality of locating cavities 38 and wherein the contact pad pocket 30 may include a plurality of corresponding locating posts 54 .
- the locating cavity 38 and locating post 54 may be entirely omitted from the contact pad 18 and contact pad pocket 30 , respectively.
- the retaining spring 32 may be a substantially U-shaped member having two laterally-spaced, substantially parallel retaining arms 60 and 62 extending from the ends of a cross member 64 .
- the lateral distance between the retaining arms 60 and 62 may be slightly greater than the inner diameter of the annular retaining channel 36 ( FIG. 3 ) of the contact pad 18 , and each of the retaining arms 60 and 62 may have a cross-sectional size and shape that allow the retaining arms 60 and 62 to be at least partially received within the retaining channel 36 as further described below.
- the retaining arms 60 and 62 may include respective, inwardly-curved portions 66 and 68 immediately adjacent the cross member 64 that define respective locking pockets 70 and 72 .
- the retaining spring 32 may be formed of any material that is suitably resilient and durable and that is also sufficiently flexible for allowing the retaining arms 60 and 62 to be flexed apart (as further described below) upon the application of moderate manual force by a human of average strength.
- the retaining spring 32 may be formed of various metals, plastics, or composite materials that provide the retaining spring 32 with a suitable, spring-like quality.
- the spring pocket 34 may be a recess formed in a top surface of the left lift arm 26 and that extends from the outer edge 45 of the left lift arm 26 toward the contact pad pocket 30 .
- the spring pocket 34 may be defined by a pair of opposing sidewalls 74 and 76 and an end wall 78 located adjacent the contact pad pocket 30 .
- the end wall 78 may include a pair of laterally-spaced locating notches 80 and 82 formed therein, the purpose of which will be described below.
- Through-holes 84 and 86 may extend from respective locating notches 80 and 82 through the end wall 78 to respective undercuts 46 and 48 of the contact pad pocket 30 (as best shown in FIG.
- Each of the through-holes 84 and 86 may have a diameter or cross-sectional size and shape that are adapted to axially receive a respective one of the retaining arms 60 and 62 in a close clearance relationship therewith as further described below.
- Laterally-spaced locking posts 88 and 90 may extend upwardly from a bottom surface 35 of the spring pocket 34 , adjacent the outer edge of the left lift arm 26 .
- the locking posts 88 and 90 may be sized and shaped to interact with respective locking pockets 70 and 72 of the retaining spring 32 .
- the locking posts 88 and 90 may be spaced apart by an amount roughly equal to the lateral distance between the locking pockets 70 and 72 .
- the locking posts 88 and 90 are shown in the figures as having a circular-cylindrical shape, and the locking pockets 70 and 72 are shown as having rounded counters, but this is not critical.
- the shapes of the locking posts 88 and 90 and locking pockets 70 and 72 may be varied as long as the locking posts 88 and 90 can be received and retained within the locking pockets 70 and 72 as further described below.
- the locking posts 88 and 90 may have a square shape and the locking pockets 70 and 72 may alternatively have corresponding square contours.
- the retaining arms 60 and 62 of the retaining spring 32 may be inserted into the respective through-holes 84 and 86 and the retaining spring 32 may be manually pushed in the direction of arrow “A” into the spring pocket 34 . If, upon an attempt to insert the retaining arms 60 and 62 into the through-holes 84 and 86 , the tips of the retaining arms 60 and 62 are not initially aligned with the through-holes 84 and 86 sufficiently to allow such insertion, the contours of the end wall 78 that define the locating notches 80 and 82 may provide assistance by guiding the tips of the retaining arms 60 and 62 into the respective through-holes 84 and 86 . It will therefore be appreciated that the locating notches 80 and 82 may be formed with any type of tapered or converging shape or configuration, such as a V-shape or a cone shape, which is suitable for providing such a guiding function.
- the inwardly-curved portions 66 and 68 of the retaining arms 60 and 62 may be brought into engagement with the locking posts 88 and 90 .
- the inwardly-curved portions 66 and 68 of the spring may be caused to flex outwardly around the locking posts 88 and 90 as they pass the posts.
- the portions 66 , 68 pass the posts 88 , 90 , they may flex back inward, locking the spring within the spring pocket 34 to assume the assembled position shown in FIG. 9 .
- the retaining spring 32 is thus secured further movement absent the application additional manual force.
- the retaining arms 60 and 62 extend into the converging undercuts 46 and 48 of the tapered contact pad pocket 30 (see FIG. 8 ).
- the inter-engagement between the undercuts 46 , 48 and the retaining arms 60 and 62 forces the arms laterally-inwardly toward one another so that they engage the retaining channel 36 ( FIG. 3 ) of the contact pad 18 .
- the engagement between the retaining arms 60 and 62 and the retaining channel 36 thus locks the contact pad 18 vertically with respect to the contact pad pocket 30 .
- the contact pad 18 can also be secured against lateral movement by mating engagement between the locating cavity 38 and locating post 64 (see FIGS. 3 and 4 ).
- the contact pad 18 and end effector body portion 12 are able to expand and contract relative to one another, such as may occur during thermal cycling, with the retaining arms 60 and 62 flexing outwardly and inwardly to accommodate such expansion and contraction without the contact pad's attachment to the end effector body portion 12 becoming loose and without causing damage to the contact pad 18 or to the end effector body portion 12 .
- the disclosed arrangement ensures that any particulate matter that may be produced by engagement between the contact pad 18 and substrates, or by frictional engagement between the contact pad 18 and the retaining spring 32 that may result from acceleration and/or thermal expansion forces, may fall into into the contact pad pocket 30 where it may be collected and removed. This prevents the particulate from raining down on other substrates or other surfaces in the associated load lock.
- the retaining spring 32 may be manually withdrawn (e.g., pulled in the opposite direction of arrow “A” in FIG. 6 ) from the retaining spring pocket 34 and the contact pad 18 may be removed from the contact pad pocket 30 .
- a new contact pad may then be placed in the contact pad pocket 30 and the retaining spring 32 may be reinserted into the retaining spring pocket 30 in the manner described above.
- the composite end effector 10 of the present disclosure thus provides a convenient arrangement for securely and removably attaching material-contacting portions of the end effector 10 to a non-material-contacting portion of the end effector 10 .
- the disclosed arrangement also permits relative thermal expansion and contraction of the material-contacting portions and non-material-contacting portion without the pad becoming loose or damaging the end effector 10 and/or a carried substrate.
- the composite end effector 10 of the present disclosure can mitigate the dispersion of particulate matter generated during substrate transfer and processing operations.
Abstract
Description
- The disclosure relates generally to wear-resistant composite structures, and more particularly to a composite end effector having a retaining spring for removably attaching a removable contact pad to the end effector.
- During production, substrates are often handled by robotic arms that are equipped with specialized tools, or “end effectors,” that are adapted for lifting and moving the substrates. Since substrates can reach high temperatures during processing (e.g., >500° C.), end effectors generally are made from materials that exhibit good thermal stability and wear resistance at high temperatures. Examples of such materials include alumina, zirconia, silicon nitride, silicon carbide, and other ceramics.
- Conventional high-temperature end effectors are often made entirely from ceramic. One problem associated with such a construction is that when the substrate-contacting portions of such end effectors become excessively worn or contaminated from use, the entire end effector must be replaced. Such replacement can be expensive as well as wasteful, since the non-material-contacting portions of the end effector may exhibit little or no wear at the time of replacement.
- One approach to this problem has been to use composite end effectors, which include substrate-contacting portions that are removably attached to non-material-contacting portions. In some cases, several small contact pads formed of ceramic material are removably attached to the end effector body, which can be made of metal. During use, only the ceramic contact pads contact with hot substrates and thus experience wear over time. When the contact pads become worn or contaminated they are removed and replaced with new contact pads. The end effector body itself needn't be replaced and is thereby preserved.
- Although composite end effectors offer several advantages relative to one-piece end effectors, still they have shortcomings. For example, the low thermal expansion and low tensile strength properties of ceramics relative to metals makes it difficult to achieve a secure, rigid connection between the two materials as is required for the construction of a composite end effector. Prior designs have employed threaded connections, press-fit pads, and retaining rings. Each of these fastening arrangements, however, exhibits particular deficiencies. For example, threaded fasteners can impart stresses on ceramic contact pads during thermal cycling, which may result in cracking of the contact pads. Threaded fasteners may also become loose over time due to vibrations and/or thermal cycling. Press-fit pads typically cannot be made from ceramic are difficult to remove when replacement become necessary. Retaining rings that clamp pads to an end effector can generate particles due to relative motion. Such particles can rain down on other silicon wafers which can be detrimental to their quality. Thus, there is a need for an improved design for a replaceable contact pad that overcomes the deficiencies associated with prior designs.
- In view of the foregoing, it would be advantageous to provide a composite end effector having material-contacting portions that are securely attached to a non-material-contacting portion. It would further be advantageous to provide such an end effector wherein the material-contacting portions may be easily removed from the non-material-contacting portion and replaced. It would also be advantageous to provide such an end effector wherein the arrangement for attaching the material-contacting portions to the non-material-contacting portion permits relative thermal expansion and contraction without loosening, and without damaging the end effector. It would further be advantageous to provide such an end effector that mitigates the dispersion of particulate matter.
- An exemplary end effector in accordance with the present disclosure may include an end effector body, a contact pad pocket formed in the end effector body, a spring retaining pocket formed in the end effector body adjacent the contact pad pocket and extending to an edge of the end effector body, and a pair of through-holes extending from the spring retaining pocket to the contact pad pocket. The end effector may further include a contact pad seated within the contact pad pocket, the contact pad having at least one retaining channel formed therein, and a retaining spring having a pair of retaining arms extending from the retaining spring pocket through the through-holes and into the contact pad pocket. The retaining arms may extend at least partially into the at least one retaining channel of the contact pad and may thereby restrict movement of the contact pad.
-
FIG. 1 is a perspective view illustrating an exemplary embodiment of an end effector in accordance with the present disclosure. -
FIG. 2 is an exploded perspective view illustrating a lift arm and a corresponding contact pad installation of the end effector shown inFIG. 1 . -
FIG. 3 is a cross-sectional view illustrating an exemplary contact pad for use with the end effector shown inFIG. 1 . -
FIG. 4 is an exploded perspective view illustrating the exemplary contact pad ofFIG. 3 and a corresponding contact pad pocket of the end effector shown inFIG. 1 . -
FIG. 5 is a top view illustrating an exemplary retaining spring for use with the end effector shown inFIG. 1 . -
FIG. 6 is a detailed perspective view illustrating installation of the contact pad ofFIG. 3 with the end effector shown inFIG. 1 , including the retaining spring in an uninstalled position. -
FIG. 7 is a top view illustrating a retaining spring pocket and a contact pad pocket of the end effector shown inFIG. 1 . -
FIG. 8 is a cross-sectional view taken along line 8-8 ofFIG. 7 illustrating the contact pad pocket shown inFIG. 7 . -
FIG. 9 is a detailed perspective view illustrating a fully assembled contact pad installation in the end effector shown inFIG. 1 . - An improved composite end effector in accordance with the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The disclosed end effector, however, may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, like numbers refer to like elements throughout.
-
FIG. 1 illustrates an exemplary embodiment of acomposite end effector 10 in accordance with the present disclosure. For the sake of convenience and clarity, terms such as “front,” “rear,” “top,” “bottom,” “right,” “left,” “up,” “down,” “inwardly,” “outwardly,” “lateral” and “longitudinal” will be used herein to describe the relative placement and orientation of components of theend effector 10, each with respect to the geometry and orientation of theend effector 10 as it appears inFIG. 1 . Said terminology will include the words specifically mentioned, derivatives thereof, and words of similar import. - The exemplary
composite end effector 10 disclosed herein is configured for handling a variety of substrates, which in an exemplary embodiment includes silicon wafers. It will be appreciated by those of ordinary skill in the art that this particular configuration is disclosed by way of example only, and that the below-described arrangement for removably coupling the different components of theend effector 10 to one another may be similarly implemented in virtually any type of composite end effector configuration and, more generally, in other types of composite structures in which components that are formed of dissimilar materials must be coupled to one another. All such embodiments are contemplated and may be implemented without departing from the scope of the present disclosure. - The
end effector 10 may include a substantially planar, V-shaped endeffector body portion 12. The endeffector body portion 12 may have amounting portion 22 having a plurality ofapertures 24 formed therethrough for facilitating attachment to a robotic arm, for example. A pair of laterally-spacedlift arms mounting portion 22 and may be adapted for engaging and lifting a substrate. A plurality ofcutouts 30 may be formed in the endeffector body portion 12 for reducing the overall weight of theend effector 10, but this is not critical. Again, the particular shape and configuration of the endeffector body portion 12 is presented by way of example only and may be varied to suit a particular application. - The end
effector body portion 12 may be formed of any material that is suitably rigid, durable, and temperature-resistant (i.e., hot and/or cold resistant) for a particular application, such as supporting a hot silicon wafer that is disposed in close proximity to a top surface thereof while the wafer is being supported or moved by theend effector 10. For example, it is contemplated that the endeffector body portion 12 may be formed of various metals, plastics, ceramics, or composite materials that exhibit good thermal stability and wear resistance at temperatures below −100° C. and up to and exceeding 500° C. - The
end effector 10 may further include a plurality ofcontact pad regions contact pad region 13 is disposed in a forward segment of thebase portion 22, while second and thirdcontact pad regions respective lift arms contact pad regions end effector 10 is moved. Eachcontact pad region respective contact pads effector body portion 12 as will be further described below. Theexemplary end effector 10 includes threecontact pad regions -
FIG. 2 shows the exemplarycontact pad region 15 located on theleft lift arm 26 of the endeffector body portion 12 shown inFIG. 1 . Thecontact pad regions 13 and 17 (shown inFIG. 1 ) may be substantially the same as thecontact pad region 15, and it will therefore be understood that the following description of thecontact pad region 15 may apply equally to thecontact pad regions - The
contact pad region 15 may include the contact pad 18 (introduced above), acontact pad pocket 30, a retainingspring 32, and aspring pocket 34, each of which will now be described in-turn. - As shown in
FIGS. 3 and 4 , thecontact pad 18 may be a substantially cylindrical member including anannular retaining channel 36 formed in asidewall 37 thereof, and a locatingcavity 38 formed in a bottom portion thereof, the purposes of which will be described below. Thecontact pad 18 may additionally include a convex,top surface 40 for directly engaging a substrate positioned thereon, but this shape is not critical. In some embodiments thetop surface 40 of thecontact pad 18 may be flat, peaked (i.e. cone-shaped), irregular, or may feature a plurality of protrusions for engaging a workpiece. - The
contact pad 18 is shown as having a circular cross-sectional shape, but it is contemplated that thecontact pad 18 may alternatively have a cross-sectional shape that is rectangular, triangular, oval, irregular, etc. It is further contemplated that instead of having a single, annular retainingchannel 36, thecontact pad 18 may have two separate, diametrically-opposite retaining channels formed in itssidewall 37 as will become apparent below. - As with the end effector body portion 12 (described above), the
contact pad 18 may be formed of any material that is suitably rigid, durable, and temperature-resistant for a particular application, such as directly engaging a bottom surface of a hot substrate while the substrate is being supported or moved by theend effector 10. For example, it is contemplated that thecontact pad 18 may be formed of various metals, plastics, ceramics, or composite materials that exhibit good thermal stability and wear resistance at temperatures below 100° C. and up to and exceeding 500° C. In one exemplary embodiment thecontact pad 18 is made from a ceramic material. - Referring to
FIG. 4 , thecontact pad pocket 30 may be a cavity formed in the top surface of theleft lift arm 26. Thecontact pad pocket 30 may have a tapered-oblong shape defined by opposingsidewalls FIG. 1 ) of theleft lift arm 26. Therounded end 47 of thecontact pad pocket 30 nearest theouter edge 45 of the left lift arm 26 (hereinafter referred to as “the proximal end”) may have a radius that is slightly greater than the radius of thecontact pad 18, and may have a depth “D” (FIG. 8 ) that is less than the total height “H” (FIG. 3 ) of thecontact pad 18. - Referring to
FIGS. 4 and 8 , thecontact pad pocket 30 may further include opposingundercuts sidewalls arms spring 32 as further described below. A cylindrical locatingpost 54 having a diameter and a height configured to be received in the locatingcavity 38 of thecontact pad 18 may extend upwardly from abottom surface 55 of the proximal end of thecontact pad pocket 30. The locatingpost 54 may thus be adapted for matingly engaging the locatingcavity 38 of thecontact pad 18 as further described below. - When the
end effector 10 is fully assembled, thecontact pad 18 may be seated within the proximal end of the contact pad pocket 30 (as best shown inFIG. 6 ), with the locatingpost 54 of thecontact pad pocket 30 extending into the locatingcavity 38 of thecontact pad 18. The locatingpost 54 thereby secures thecontact pad 18 against lateral movement within thecontact pad pocket 30 and further prevents thecontact pad 18 from being installed in thecontact pad pocket 30 in an upside-down orientation. With thecontact pad 18 installed thusly, thesidewall 37 of thecontact pad 18 may be disposed in a close clearance relationship with thesidewalls channel 36 may be vertically aligned with theundercuts top surface 40 of thecontact pad 18 may extend above the top surface of the endeffector body portion 12. - The locating
cavity 38 and locatingpost 54 are shown inFIGS. 3 and 4 as being substantially cylindrical in shape, but it is contemplated that the locatingcavity 38 and locatingpost 54 may have any shape or configuration that facilitates mating engagement therebetween for securing the lateral position of thecontact pad 18 within thecontact pad pocket 30. Furthermore, alternative embodiments of theend effector 10 are contemplated wherein thecontact pad 18 may include a plurality of locatingcavities 38 and wherein thecontact pad pocket 30 may include a plurality of corresponding locating posts 54. Still further, it is contemplated that the locatingcavity 38 and locatingpost 54 may be entirely omitted from thecontact pad 18 andcontact pad pocket 30, respectively. - Referring to
FIGS. 5 and 6 , the retainingspring 32 may be a substantially U-shaped member having two laterally-spaced, substantially parallel retainingarms cross member 64. The lateral distance between the retainingarms FIG. 3 ) of thecontact pad 18, and each of the retainingarms arms channel 36 as further described below. The retainingarms curved portions cross member 64 that define respective locking pockets 70 and 72. - The retaining
spring 32 may be formed of any material that is suitably resilient and durable and that is also sufficiently flexible for allowing the retainingarms spring 32 may be formed of various metals, plastics, or composite materials that provide the retainingspring 32 with a suitable, spring-like quality. - Referring to
FIGS. 6 and 7 , thespring pocket 34 may be a recess formed in a top surface of theleft lift arm 26 and that extends from theouter edge 45 of theleft lift arm 26 toward thecontact pad pocket 30. Thespring pocket 34 may be defined by a pair of opposingsidewalls end wall 78 located adjacent thecontact pad pocket 30. Theend wall 78 may include a pair of laterally-spacedlocating notches holes respective locating notches end wall 78 torespective undercuts FIG. 9 ), thereby forming continuous channels from thespring pocket 34 to thecontact pad pocket 30. Each of the through-holes arms - Laterally-spaced locking posts 88 and 90 may extend upwardly from a
bottom surface 35 of thespring pocket 34, adjacent the outer edge of theleft lift arm 26. The locking posts 88 and 90 may be sized and shaped to interact with respective locking pockets 70 and 72 of the retainingspring 32. In an embodiment, the locking posts 88 and 90 may be spaced apart by an amount roughly equal to the lateral distance between the locking pockets 70 and 72. - The locking posts 88 and 90 are shown in the figures as having a circular-cylindrical shape, and the locking pockets 70 and 72 are shown as having rounded counters, but this is not critical. The shapes of the locking posts 88 and 90 and locking
pockets - Referring to
FIGS. 6 and 9 , the retainingarms spring 32 may be inserted into the respective through-holes spring 32 may be manually pushed in the direction of arrow “A” into thespring pocket 34. If, upon an attempt to insert the retainingarms holes arms holes end wall 78 that define the locatingnotches arms holes notches - As the retaining
spring 32 is slid into thespring pocket 34, the inwardly-curved portions arms spring 32 in the direction of insertion (i.e., arrow “A” inFIG. 6 ), the inwardly-curved portions portions posts spring pocket 34 to assume the assembled position shown inFIG. 9 . The retainingspring 32 is thus secured further movement absent the application additional manual force. - With the retaining
spring 32 installed in the manner described above, the retainingarms FIG. 8 ). The inter-engagement between theundercuts arms FIG. 3 ) of thecontact pad 18. The engagement between the retainingarms channel 36 thus locks thecontact pad 18 vertically with respect to thecontact pad pocket 30. As described above, thecontact pad 18 can also be secured against lateral movement by mating engagement between the locatingcavity 38 and locating post 64 (seeFIGS. 3 and 4 ). - Since the retaining
spring 32 is flexible, thecontact pad 18 and endeffector body portion 12 are able to expand and contract relative to one another, such as may occur during thermal cycling, with the retainingarms effector body portion 12 becoming loose and without causing damage to thecontact pad 18 or to the endeffector body portion 12. - In addition, the disclosed arrangement ensures that any particulate matter that may be produced by engagement between the
contact pad 18 and substrates, or by frictional engagement between thecontact pad 18 and the retainingspring 32 that may result from acceleration and/or thermal expansion forces, may fall into into thecontact pad pocket 30 where it may be collected and removed. This prevents the particulate from raining down on other substrates or other surfaces in the associated load lock. - To replace the
contact pad 18, such as may be desired where thecontact pad 18 is damaged, becomes excessively worn, or is excessively contaminated, the retainingspring 32 may be manually withdrawn (e.g., pulled in the opposite direction of arrow “A” inFIG. 6 ) from the retainingspring pocket 34 and thecontact pad 18 may be removed from thecontact pad pocket 30. A new contact pad may then be placed in thecontact pad pocket 30 and the retainingspring 32 may be reinserted into the retainingspring pocket 30 in the manner described above. - The
composite end effector 10 of the present disclosure thus provides a convenient arrangement for securely and removably attaching material-contacting portions of theend effector 10 to a non-material-contacting portion of theend effector 10. The disclosed arrangement also permits relative thermal expansion and contraction of the material-contacting portions and non-material-contacting portion without the pad becoming loose or damaging theend effector 10 and/or a carried substrate. In addition, thecomposite end effector 10 of the present disclosure can mitigate the dispersion of particulate matter generated during substrate transfer and processing operations. - As used herein, an element or step recited in the singular and proceeded with the word “a” or “an” should be understood as not excluding plural elements or steps, unless such exclusion is explicitly recited. Furthermore, references to “one embodiment” of the present invention are not intended to be interpreted as excluding the existence of additional embodiments that also incorporate the recited features.
- While certain embodiments of the disclosure have been described herein, it is not intended that the disclosure be limited thereto, as it is intended that the disclosure be as broad in scope as the art will allow and that the specification be read likewise. Therefore, the above description should not be construed as limiting, but merely as exemplifications of particular embodiments. Those skilled in the art will envision other modifications within the scope and spirit of the claims appended hereto.
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/861,737 US8864202B1 (en) | 2013-04-12 | 2013-04-12 | Spring retained end effector contact pad |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/861,737 US8864202B1 (en) | 2013-04-12 | 2013-04-12 | Spring retained end effector contact pad |
Publications (2)
Publication Number | Publication Date |
---|---|
US20140306474A1 true US20140306474A1 (en) | 2014-10-16 |
US8864202B1 US8864202B1 (en) | 2014-10-21 |
Family
ID=51686280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/861,737 Active 2033-06-05 US8864202B1 (en) | 2013-04-12 | 2013-04-12 | Spring retained end effector contact pad |
Country Status (1)
Country | Link |
---|---|
US (1) | US8864202B1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170144313A1 (en) * | 2015-11-24 | 2017-05-25 | Hirata Corporation | Hand Member and Hand |
KR20180069728A (en) * | 2016-12-15 | 2018-06-25 | 자빌 인코퍼레이티드 | Apparatus, system and method for providing a conformable vacuum cup for an end effector |
KR20190002297A (en) * | 2017-06-29 | 2019-01-08 | 니혼 덴산 산쿄 가부시키가이샤 | Hand of industrial robot and industrial robot |
US20200105571A1 (en) * | 2018-09-27 | 2020-04-02 | Semes Co., Ltd. | Transfer robot and apparatus for treating substrate with the robot |
WO2020176674A1 (en) * | 2019-02-27 | 2020-09-03 | Applied Materials, Inc. | Replaceable end effector contact pads, end effectors, and maintenance methods |
WO2021257488A1 (en) * | 2020-06-14 | 2021-12-23 | Fabworx Solutions, Inc. | Robotic end effector equipped with replaceable wafer contact pads |
Families Citing this family (331)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
SG194239A1 (en) * | 2012-04-09 | 2013-11-29 | Semiconductor Tech & Instr Inc | End handler |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
JP6224437B2 (en) * | 2013-11-26 | 2017-11-01 | 東京エレクトロン株式会社 | Substrate transfer device |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9343350B2 (en) * | 2014-04-03 | 2016-05-17 | Asm Ip Holding B.V. | Anti-slip end effector for transporting workpiece using van der waals force |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
JP6305272B2 (en) * | 2014-08-14 | 2018-04-04 | 株式会社ディスコ | Transport device |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10231777B2 (en) * | 2014-08-26 | 2019-03-19 | Covidien Lp | Methods of manufacturing jaw members of an end-effector assembly for a surgical instrument |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102300403B1 (en) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing thin film |
KR102263121B1 (en) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor device and manufacuring method thereof |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US9779977B2 (en) * | 2015-04-15 | 2017-10-03 | Lam Research Corporation | End effector assembly for clean/dirty substrate handling |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10737923B2 (en) | 2016-03-16 | 2020-08-11 | Cascade Corporation | Cast contact pads |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (en) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming metal interconnection and method of fabricating semiconductor device using the same |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
JP6833350B2 (en) * | 2016-06-01 | 2021-02-24 | キヤノン株式会社 | Manufacturing methods for holding devices, transport devices, lithography equipment, and articles |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US9757865B1 (en) * | 2017-03-03 | 2017-09-12 | Well Thin Technology, Ltd. | Carrier plate assembly for a wafer |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10399231B2 (en) * | 2017-05-22 | 2019-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate handling contacts and methods |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
CN109461693B (en) * | 2017-09-06 | 2023-06-02 | 台湾积体电路制造股份有限公司 | Wafer transfer apparatus, wafer processing system and method |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7206265B2 (en) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | Equipment with a clean mini-environment |
CN111316417B (en) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | Storage device for storing wafer cassettes for use with batch ovens |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
CN111630203A (en) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | Method for depositing gap filling layer by plasma auxiliary deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
KR20190128558A (en) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TW202349473A (en) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
TW202013553A (en) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
CN112292478A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
TW202104632A (en) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TW202121506A (en) | 2019-07-19 | 2021-06-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
TW202115273A (en) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210078405A (en) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
JP7415782B2 (en) * | 2020-05-11 | 2024-01-17 | 東京エレクトロン株式会社 | Substrate transfer mechanism and substrate transfer method |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
TW202212623A (en) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming metal silicon oxide layer and metal silicon oxynitride layer, semiconductor structure, and system |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
TW202235675A (en) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Injector, and substrate processing apparatus |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913646A (en) * | 1974-05-09 | 1975-10-21 | Robert E Grayson | Fingertip nut and bolt holding tool |
US5783834A (en) * | 1997-02-20 | 1998-07-21 | Modular Process Technology | Method and process for automatic training of precise spatial locations to a robot |
US6116848A (en) * | 1997-11-26 | 2000-09-12 | Brooks Automation, Inc. | Apparatus and method for high-speed transfer and centering of wafer substrates |
US6216883B1 (en) * | 1998-07-24 | 2001-04-17 | Mitsubishi Denki Kabushiki Kaisha | Wafer holding hand |
US6962477B2 (en) * | 1997-05-15 | 2005-11-08 | Tokyo Electron Limited | Apparatus for and method of transferring substrates |
US20060113806A1 (en) * | 2004-11-29 | 2006-06-01 | Asm Japan K.K. | Wafer transfer mechanism |
US7055875B2 (en) * | 2003-07-11 | 2006-06-06 | Asyst Technologies, Inc. | Ultra low contact area end effector |
US20070128008A1 (en) * | 2005-12-06 | 2007-06-07 | Tokyo Electron Limited | Substrate transfer method and substrate transfer apparatus |
US7384083B2 (en) * | 2005-07-15 | 2008-06-10 | Fabworx Solutions, Inc. | O-ring locking mount |
US7654596B2 (en) * | 2003-06-27 | 2010-02-02 | Mattson Technology, Inc. | Endeffectors for handling semiconductor wafers |
US7748760B2 (en) * | 2006-10-27 | 2010-07-06 | Daihen Corporation | Work holding mechanism |
US20120315113A1 (en) * | 2010-02-05 | 2012-12-13 | Tokyo Electron Limited | Substrate holder, substrate transfer apparatus, and substrate processing apparatus |
US8454068B2 (en) * | 2009-12-01 | 2013-06-04 | Kawasaki Jukogyo Kabushiki Kaisha | Edge grip device and robot including the same |
US8752872B2 (en) * | 2009-09-14 | 2014-06-17 | Fabworx Solutions, Inc. | Edge grip end effector |
US8764085B2 (en) * | 2012-10-19 | 2014-07-01 | Sinfonia Technology Co., Ltd. | Clamping device and workpiece conveying robot |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5279211A (en) | 1992-04-24 | 1994-01-18 | Cummins Engine Company, Inc. | Mechanically retained wear-resistant ceramic pad |
-
2013
- 2013-04-12 US US13/861,737 patent/US8864202B1/en active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913646A (en) * | 1974-05-09 | 1975-10-21 | Robert E Grayson | Fingertip nut and bolt holding tool |
US5783834A (en) * | 1997-02-20 | 1998-07-21 | Modular Process Technology | Method and process for automatic training of precise spatial locations to a robot |
US6962477B2 (en) * | 1997-05-15 | 2005-11-08 | Tokyo Electron Limited | Apparatus for and method of transferring substrates |
US6116848A (en) * | 1997-11-26 | 2000-09-12 | Brooks Automation, Inc. | Apparatus and method for high-speed transfer and centering of wafer substrates |
US6216883B1 (en) * | 1998-07-24 | 2001-04-17 | Mitsubishi Denki Kabushiki Kaisha | Wafer holding hand |
US7654596B2 (en) * | 2003-06-27 | 2010-02-02 | Mattson Technology, Inc. | Endeffectors for handling semiconductor wafers |
US7055875B2 (en) * | 2003-07-11 | 2006-06-06 | Asyst Technologies, Inc. | Ultra low contact area end effector |
US20060113806A1 (en) * | 2004-11-29 | 2006-06-01 | Asm Japan K.K. | Wafer transfer mechanism |
US7384083B2 (en) * | 2005-07-15 | 2008-06-10 | Fabworx Solutions, Inc. | O-ring locking mount |
US20070128008A1 (en) * | 2005-12-06 | 2007-06-07 | Tokyo Electron Limited | Substrate transfer method and substrate transfer apparatus |
US7748760B2 (en) * | 2006-10-27 | 2010-07-06 | Daihen Corporation | Work holding mechanism |
US8752872B2 (en) * | 2009-09-14 | 2014-06-17 | Fabworx Solutions, Inc. | Edge grip end effector |
US8454068B2 (en) * | 2009-12-01 | 2013-06-04 | Kawasaki Jukogyo Kabushiki Kaisha | Edge grip device and robot including the same |
US20120315113A1 (en) * | 2010-02-05 | 2012-12-13 | Tokyo Electron Limited | Substrate holder, substrate transfer apparatus, and substrate processing apparatus |
US8764085B2 (en) * | 2012-10-19 | 2014-07-01 | Sinfonia Technology Co., Ltd. | Clamping device and workpiece conveying robot |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106783715A (en) * | 2015-11-24 | 2017-05-31 | 平田机工株式会社 | Hand component and hand |
KR20170060575A (en) * | 2015-11-24 | 2017-06-01 | 히라따기꼬오 가부시키가이샤 | Hand member and hand |
US9776333B2 (en) * | 2015-11-24 | 2017-10-03 | Hirata Corporation | Hand member and hand |
TWI624899B (en) * | 2015-11-24 | 2018-05-21 | Hirata Spinning | Hand components and hand |
KR101882903B1 (en) * | 2015-11-24 | 2018-07-27 | 히라따기꼬오 가부시키가이샤 | Hand member and hand |
US20170144313A1 (en) * | 2015-11-24 | 2017-05-25 | Hirata Corporation | Hand Member and Hand |
JP7180975B2 (en) | 2016-12-15 | 2022-11-30 | ジャビル インク | Apparatus and method for providing matching vacuum cups for end effectors |
KR20180069728A (en) * | 2016-12-15 | 2018-06-25 | 자빌 인코퍼레이티드 | Apparatus, system and method for providing a conformable vacuum cup for an end effector |
JP2018108638A (en) * | 2016-12-15 | 2018-07-12 | ジャビル インク | Device and method for imparting adaptable vacuum cup for end effector |
KR102496933B1 (en) | 2016-12-15 | 2023-02-06 | 자빌 인코퍼레이티드 | Apparatus, system and method for providing a conformable vacuum cup for an end effector |
KR20190002297A (en) * | 2017-06-29 | 2019-01-08 | 니혼 덴산 산쿄 가부시키가이샤 | Hand of industrial robot and industrial robot |
KR102071791B1 (en) | 2017-06-29 | 2020-01-30 | 니혼 덴산 산쿄 가부시키가이샤 | Hand of industrial robot and industrial robot |
US10923384B2 (en) * | 2018-09-27 | 2021-02-16 | Semes Co., Ltd. | Transfer robot and apparatus for treating substrate with the robot |
US20200105571A1 (en) * | 2018-09-27 | 2020-04-02 | Semes Co., Ltd. | Transfer robot and apparatus for treating substrate with the robot |
WO2020176674A1 (en) * | 2019-02-27 | 2020-09-03 | Applied Materials, Inc. | Replaceable end effector contact pads, end effectors, and maintenance methods |
CN113543940A (en) * | 2019-02-27 | 2021-10-22 | 应用材料公司 | Replaceable end effector contact pad, end effector and maintenance method |
US11600580B2 (en) | 2019-02-27 | 2023-03-07 | Applied Materials, Inc. | Replaceable end effector contact pads, end effectors, and maintenance methods |
WO2021257488A1 (en) * | 2020-06-14 | 2021-12-23 | Fabworx Solutions, Inc. | Robotic end effector equipped with replaceable wafer contact pads |
Also Published As
Publication number | Publication date |
---|---|
US8864202B1 (en) | 2014-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8864202B1 (en) | Spring retained end effector contact pad | |
US5221099A (en) | Device for conducting forces into movable objects | |
EP2629327B1 (en) | Semiconductor manufacturing apparatus | |
US7384083B2 (en) | O-ring locking mount | |
KR20070041594A (en) | Toolholder and cutting insert for a toolholder assembly | |
CN108006348B (en) | Male connector and connection system for cooling tube | |
EP3051199B1 (en) | Grip elements for grip ring | |
MX2007001572A (en) | Device for supporting an item on a structure. | |
SG144821A1 (en) | High temperature robot end effector | |
KR20190026898A (en) | Apparatus for handling semiconductor wafers in epitaxial reactors and method for manufacturing semiconductor wafers having epitaxial layers | |
CN101273208A (en) | Clamping part and retention device having a clamping part ofthis type | |
US20050121902A1 (en) | Fitting for ENT tubing | |
JPH0390793A (en) | Rapid mounting and demounting bit | |
US5129613A (en) | Fixture for attaching contact material | |
KR102612953B1 (en) | Replaceable end effector contact pads, end effectors and maintenance methods | |
WO2002005326A2 (en) | Robotic end effector provided with wafer supporting pads elastically mounted | |
JP4358607B2 (en) | Retainer | |
US20230249360A1 (en) | Robotic end effector equipped with replaceable wafer contact pads | |
CN212377042U (en) | Clip type pipe sleeve structure | |
US8678716B2 (en) | Cutting tool assembly with removable tool head | |
US6511227B1 (en) | Removable bearing | |
US20230339123A1 (en) | Suction head for a waste sorting system | |
WO2018223659A1 (en) | Deposition ring and chuck assembly | |
KR101495901B1 (en) | Ceramic material structure and the bonding method combines the boat | |
JP2021050774A (en) | Fixture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., M Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SCHRAMEYER, MICHAEL A.;REEL/FRAME:030346/0003 Effective date: 20130426 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551) Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |