US20140138790A1 - Inter-Layer Insulator for Electronic Devices and Apparatus for Forming Same - Google Patents
Inter-Layer Insulator for Electronic Devices and Apparatus for Forming Same Download PDFInfo
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- US20140138790A1 US20140138790A1 US13/682,826 US201213682826A US2014138790A1 US 20140138790 A1 US20140138790 A1 US 20140138790A1 US 201213682826 A US201213682826 A US 201213682826A US 2014138790 A1 US2014138790 A1 US 2014138790A1
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- 239000012212 insulator Substances 0.000 title claims description 11
- 239000011229 interlayer Substances 0.000 title abstract description 4
- 239000010410 layer Substances 0.000 claims abstract description 207
- 239000012528 membrane Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 6
- 230000006870 function Effects 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000013626 chemical specie Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical class FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Definitions
- This disclosure relates generally to improved semiconductor products that employ air gaps as inter-layer insulators, and methods and apparatus for making such semiconductor products.
- Modern semiconductor devices comprise vast numbers of individual structures or components disposed on one or more layers. To ensure that a semiconducting device functions properly, most, if not all, of the individual structures or components need to be electrically isolated from each other. Traditionally, such isolation is accomplished through the use of materials such as dielectric films to act as inter-layer insulators between the various components that make up a typical device. However, as device size decreases, the existing materials have been found to result in a number of problems such as leakage, noise, and a capacitive effect, for example.
- One approach used to ameliorate the problems associated with the use of dielectric materials as insulators has been to instead use air gaps as insulators.
- the pinching method is dependent on the physical layout of the structures that form the semiconductor device; malformed air gaps can be produced when the individual structures are too close or too far from one another. There are also other uncontrollable aspects of the deposition process and the fabrication process that can result in malformed air gaps. Accordingly, new devices and methods as well as method and apparatuses for producing such devices that do not suffer from the same drawbacks as the existing methods are desired.
- Embodiments of the invention include apparatuses and methods of producing semiconductor devices that use an gaps as electrical insulators. Embodiments also include such semiconductor devices.
- the method may include forming a sacrificial layer between a first structure and a second structure.
- a membrane layer can be formed over the sacrificial layer.
- the membrane can be porous to an etch product.
- the sacrificial layer may then be etched away to create an air gap without etching the membrane layer or the buffer layer.
- a cap layer may be disposed on top of the membrane layer according to various embodiments.
- a buffer layer may be formed between the sacrificial layer and the first and second structures.
- a semiconducting device that uses air gaps as electrical insulators.
- the device may include an air gap insulator disposed between a first and second structure of the semiconducting device.
- the device also includes a membrane layer disposed above the air gap and between the first and second structures.
- the membrane layer is porous to an etching product that is capable of etching the sacrificial layer without etching the membrane layer.
- the device may also include a cap layer disposed on top of the membrane layer.
- a buffer layer may be formed between the first and second structures and the air gap.
- FIG. 1 illustrates a semiconductor device with air gaps created according to the pinch method.
- FIGS. 2 a - 2 i illustrate a semiconductor device after performing various steps in the manufacture process according to embodiments of the present invention.
- FIG. 3 is a flow chart illustrating a method of producing a semiconducting device with air gaps used as insulators according to embodiments of the invention.
- FIG. 4 is a functional block diagram of an apparatus used to produce a semiconducting device according to embodiments of the invention.
- FIG. 1 illustrates a semiconducting device with air gap insulators produced according to an existing non-conformal “pinching method.”
- the device 100 includes a number of structures 104 a , 104 b , and 104 c (collectively referred to herein as structures 104 ).
- the structures 104 are disposed on top of a base 102 , which may comprise a semiconductor substrate. Between each of the structures 104 is a gap 110 a , 110 b which separates the structures 104 from each other. Additionally, the structures 104 have a buffer layer 106 disposed on top of them. In this case, it can be seen that buffer layer 106 is non-conformally deposited.
- a conformal film is a film that is deposited on an uneven surface, but that has an even thickness. While few films are truly conformal when deposited (due to slight uncontrollable variations in their thickness), as used herein, conformal refers to films that have substantially even thicknesses. Non-conformal films, conversely, are films that have an uneven thickness—i.e., they are thicker at some points and thinner at others. Buffer layer 106 as depicted in FIG. 1 is such a non-conformal film because, as can be seen, it is thicker toward the top of structures 104 and thinner toward the base 102 . Typically, buffer layer 106 comprises a dielectric such as Si0 2 .
- the structures 104 a , 104 b , and 104 c are not evenly spaced, which can result in errors and inconsistencies in the production process when using the existing pinching method.
- gap 110 a is open at the top because the buffer layer 106 does not touch as it should at point 108 a .
- Gap 110 b is closed by the “pinching” of the buffer layer 106 between structures 104 b and 104 c at pinch point 108 b .
- an air gap is properly formed between structures 104 b and 104 c (although other problems may exist such as leakage or unwanted capacitance at pinch point 108 b ).
- the buffer layer 106 cannot “pinch” at a pinch point.
- the “pinching” method is dependent, to a certain extent, on the physical dimensions of the various structures 104 that comprise the semiconducting device 100 . While gap 110 a does constitute an air gap and it can insulate structure 104 a from 104 b , the open top can sometimes foreclose the possibility of another layer, such as a cap layer, being formed over the gap 110 a at point 108 a . As depicted in FIG.
- the efficacy of the pinch method of creating air gaps is, at least in part, dependent on the actual physical geometry of the semiconducting device. It would be desirable to have a method of creating air gaps that is independent of the physical geometry of the semiconducting device.
- FIGS. 2 a - 2 f depict a semiconducting device 200 with air gaps as insulators.
- FIG. 2 a depicts device 200 that includes a number of different structures 204 a , 204 b , and 204 c (hereinafter collectively referred to as structures 204 ).
- the structures 204 could be, for instance, any combination of various circuit components such as transistors, capacitors, electrodes, contacts, interconnects, etc. Indeed, the structures 204 may include any device component that requires electrical insulation from its neighboring components.
- the structures 204 are disposed on a base 202 , which may comprise a semiconducting substrate, the top of another layer of device components, or the like. Additionally, gaps 210 a and 210 b (collectively referred to as gaps 210 , herein) are positioned between structures 204 a and 204 b and between structures 204 b and 204 c , respectively.
- a buffer layer 206 is disposed over the structures 204 .
- the buffer layer 206 may comprise a suitable dielectric film composed of, for instance, silicon dioxide (SiO 2 ) that is confomally formed on top of the structures 204 .
- the buffer layer 206 may be formed using any of the well-known method such as deposition.
- Deposition can comprise any process that grows, coats, or transfers material onto a substrate.
- Some well-known technologies include physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE), atomic layer deposition (ALD), and plasma-enhanced CVD (PECVD), amongst others.
- the buffer layer 206 may be used in embodiments where additional protection is required for structures 204 is required during etching of the sacrificial layer 208 . This is required, for instance, when the etching product that is used to etch the sacrificial layer 208 would also etch structures 204 .
- the buffer layer 206 either does not react with the etch product at all or reacts at a slower rate than the with the etch product than sacrificial layer 208 . Accordingly, the buffer layer 206 serves to isolate the structures 204 from the effects of the etching products or chemicals.
- FIG. 2 b depicts the device 200 after a sacrificial layer 208 has been formed on top of the structures 204 and between them in gaps 210 a and 210 b .
- the sacrificial layer 208 comprises a material that has etching selectivity (i.e., can be etched separately) with the buffer layer 206 .
- sacrificial layer 208 and buffer layer 206 are formed from different materials such that etching, products can etch one but not the other.
- the sacrificial layer 208 can comprise silicon (Si), Aluminum (Al), Germanium (Ge), or an organic film such as photo resist. As shown in FIG.
- the same material is used for the sacrificial layer 208 to fill in gaps 210 a and 210 b .
- different materials can be used for different gaps. For instance, silicon could be used as the sacrificial layer 208 for gap 210 a and photoresist as the sacrificial layer 208 for gap 210 b , according to some embodiments.
- FIG. 2 c shows the device 200 after removal of the portion of sacrificial layer 208 extending beyond the structures 204 .
- the sacrificial layer 208 can be planarized with polish or etch back to be roughly even with the tops of the structures 204 or the buffer 206 disposed on top of the structures 204 . While the sacrificial layer 208 is preferably planarized, according to various embodiments, the step may be neither necessary nor desirable and may, therefore, be omitted.
- FIG. 2 d depicts the device 200 after membranes 212 a and 212 b (collectively referred to herein as membrane layer 212 ) have been formed on top of the sacrificial layer 208 .
- the membrane layer 212 is preferably a material that is porous to chemical species and etch products that can be used to etch the sacrificial layer 208 .
- the membrane layer 212 can be formed out of a native oxide of Si or Al by light oxidation of the surface of the sacrificial layer 208 using oxidation species generated in plasma, a radical environment, or ozone.
- the membrane layer 212 can be formed onto the sacrificial layer by sputtering or deposition (e.g., chemical vapor deposition).
- the membrane layer 212 may have a thickness around 5 to 200 ⁇ (0.5 to 20 nm), but it can be thicker or thinner according to various embodiments.
- the membrane layer 212 can also be formed by forming a native oxide using a wet chemical treatment according to various embodiments. This native oxide formed by a wet chemical treatment will be a membrane with the thickness ranged 5 to 20 ⁇ (0.5 to 2 nm).
- the wet chemical treatment can be implemented for inorganic materials such as Si, Al, and Ge of sacrificial layer.
- the wet chemical treatment may comprise a liquid that includes actively oxidize-spices such as H 2 O, H 2 O 2 , H 2 SO 4 , NH 4 OH, HNO 3 .
- FIG. 2 e depicts the device 200 after the sacrificial layer 208 has been etched leaving gaps 210 a and 210 b .
- the sacrificial layer 208 is preferably etched using an etch product for which the membrane layer 212 is porous and that does not etch buffer layer 206 .
- the sacrificial layer 208 may be etched using Cl 2 , KOH, TMAH (tetra-methyl-amino-hydroxyl), or using gas phase etching with, for instance, H 2 , HCl, O 2 , H 2 O (vapor or gas), O 3 , HF, F 2 , and Carbon-Fluoride compounds with Cl2 and XeF 2 .
- a combination of etching products may be used.
- FIG. 2 f depicts the device 200 after a cap layer 214 has been formed on top of the buffer layer 206 and the membrane layer 212 .
- the cap layer 214 can be employed to seal the air gaps (the membrane 212 may be porous to air and thus not serve to seal the air gaps).
- the cap layer 214 can be formed using any material and process such as CVD of SiO 2 , sputtered Al 2 O 3 , or SiN by high viscosity liquid source.
- the cap layer 214 preferably comprises a dielectric material, however, it may comprise any suitable material.
- the cap layer 214 may comprise metal layers, semiconducting layers, or a combination of dielectric, metal, and semiconducting layers, depending on the various requirements.
- a semiconducting device 200 has been formed with a number of air gaps 210 after performing the steps depicted in FIGS. 2 a - 2 c .
- air gaps 210 a and 210 b are covered by membrane layers 21 a and 212 b , respectively and by the cap layer 214 .
- the air gaps 210 are entirely closed by the membrane layers 212 irrespective of the physical geometry of the placement of the structures 204 relative to one another.
- the semiconducting device 200 depicted in FIG. 2 f therefore, has reduced noise coupling and leakage when compared to the semiconducting device 100 from FIG. 1 , and the formation is more controllable and can be accomplished with varying physical geometry.
- FIGS. 2 g - 2 i depict an alternative embodiment where membrane layer 212 is deposited over the entire surface of device 200 .
- FIG. 2 g depicts the device 200 after membrane 212 has been formed on top of the sacrificial layer 208 .
- membrane layer 212 is preferably a material that is porous to chemical species and etch products that can be used to etch the sacrificial layer 208 .
- the membrane layer 212 can be formed out of a native oxide of Si or Al by light oxidation of the surface of the sacrificial layer 208 using oxidation species generated in plasma, a radical environment, or ozone.
- the membrane layer 212 can be formed onto the sacrificial layer by sputtering or deposition (e.g., chemical vapor deposition).
- the membrane layer 212 may have a thickness around 5 to 200 ⁇ (0.5 to 20 nm), but it can be thicker or thinner according to various embodiments.
- the membrane layer 212 can also be formed by forming a native oxide using a wet chemical treatment according to various embodiments. This native oxide formed by a wet chemical treatment will be a membrane with the thickness ranged 5 to 20 ⁇ (0.5 to 2 nm).
- the wet chemical treatment can be implemented for inorganic materials such as Si, Al, and Ge of sacrificial layer.
- the wet chemical treatment may comprise a liquid that includes actively oxidize-spices such as H 2 O, H 2 O 2 , H 2 SO 4 , NH 4 OH, HNO 3 .
- FIG. 2 h depicts the device 200 after the sacrificial layer 208 has been etched leaving gaps 210 a and 210 b .
- the device 200 at this point is similar to the device 200 depicted in FIG. 2 e , except that the membrane 212 layer is continuous.
- the sacrificial layer 208 is preferably etched using an etch product for which the membrane layer 212 is porous and that does not etch buffer layer 206 .
- the sacrificial layer 208 may be etched using Cl 2 , KOH, TMAH (tetra-methyl-amino-hydroxyl), or using gas phase etching with, for instance, H 2 , HCl, O 2 , H 2 O (vapor or gas), O 3 , HF, F 2 , and Carbon-Fluoride compounds with Cl2 and XeF 2 .
- TMAH tetra-methyl-amino-hydroxyl
- gas phase etching with, for instance, H 2 , HCl, O 2 , H 2 O (vapor or gas), O 3 , HF, F 2 , and Carbon-Fluoride compounds with Cl2 and XeF 2 .
- a combination of etching products may be used.
- FIG. 2 i depicts the device 200 after a cap layer 214 has been formed on top of the buffer layer 206 and the membrane layer 212 .
- the device 200 depicted in FIG. 2 i is similar to the device 200 depicted in 2 f except that the membrane layer 212 is continuous.
- the cap layer 214 can be employed to seal the air gaps (the membrane 212 may be porous to air and thus not serve to seal the air gaps).
- the cap layer 214 can be formed using any material and process such as CVD of SiO 2 , sputtered Al 2 O 3 , or SiN by high viscosity liquid source.
- the cap layer 214 preferably comprises a dielectric material, however, it may comprise any suitable material.
- the cap layer 214 may comprise metal layers, semiconducting layers, or a combination of dielectric, metal, and semiconducting layers, depending on the various requirements.
- FIG. 3 is a flowchart illustrating a process 300 of constructing a semiconducting device that uses an air gap as insulation according to various embodiments.
- flowchart 300 will be described with continuing reference to FIGS. 2 a - 2 f , though the invention is not limited to this example.
- a buffer layer 206 can be formed on semiconductor device structures 204 ( FIG. 2 a ).
- the buffer layer 206 preferably comprises a dielectric such as SiO 2 and is conformal.
- the buffer layer 206 can be formed by deposition using CVD, PECVD, ALD, or any of the other well-known deposition methods outlined above.
- a sacrificial layer 208 is deposited on top of the buffer layer 206 and between device structures 204 ( FIG. 2 b ).
- the sacrificial layer 208 may comprise any material that has an etching or polishing selectivity with the buffer layer 206 . That is, the sacrificial layer 208 may be any material that can be etched by processes or means that have will little or no effect on the buffer layer 206 .
- the sacrificial layer 208 may comprise Si, Al, or an organic film such as photo resist.
- the excess sacrificial layer 208 is removed by, for instance, polishing or etching ( FIG. 2 c ).
- the sacrificial layer 208 can be removed so that the top of the structures 204 are exposed and that the sacrificial layer 208 is substantially flush with the top of the structure 204 or the buffer layer 206 .
- the sacrificial layer 208 can be removed such that it is concave with respect to the top of the structures 204 or buffer layer 206 .
- the membrane layer 212 can be formed over the remaining portion of the sacrificial layer 208 ( FIG. 2 d ). According to some embodiments, the membrane layer 212 may be formed over the entirety of the device—i.e., over both the sacrificial layer and the top portion of the structures 204 /buffer layer 206 .
- the membrane layer 212 may be comprised of any material that will allow etch chemical species and/or etch product to pass through to the sacrificial layer 208 .
- the membrane layer 212 comprises a native oxide of Si or Al (depending on the composition of the sacrificial material) and can be formed by light oxidation of the surface of the using oxidation species that are generated in a plasma/radical environment or in ozone.
- the membrane layer 212 may be formed onto the sacrificial layer 208 by sputtering or deposition.
- the sacrificial layer 208 can be removed from the device 200 by selective etching thereby leaving air gaps 210 in the spaces 210 once occupied by the sacrificial layer 208 ( FIG. 2 e ).
- the sacrificial layer 208 may be etched using gasses that pass through the membrane layer 212 and react with the materials of the sacrificial layer 208 , but that do not or substantially do not react with the material comprising the membrane 212 or buffer 206 . That is, the process of etching the sacrificial material 208 leaves the membrane layer 212 and buffer 206 intact.
- the buffer layer 206 does not react with the products used to etch the sacrificial layer 208 according to various embodiments and can, therefore, use to isolate the structures 204 from the effects of the etching product. According to some embodiments, the buffer layer 206 may partially react or react more slowly with the etching product than the sacrificial layer 208 . However, in such embodiments, the buffer layer 206 can be made of sufficient thickness to still isolate the structures 204 from the effects of the etching product.
- a cap layer is formed or top of the membrane layer the cap layer 214 can be employed to deal the air gaps.
- the cap layer 214 can be used for any material and process such as CVD of SiO 2 , sputtered Al 2 O 3 , or SiN by high viscosity liquid source. While, in an embodiment, the cap layer 214 comprises a dielectric material, it may sometimes be desirable to form it of metal layers, depending on the various requirements.
- FIG. 4 is a functional block diagram of an apparatus 400 for producing a semiconducting device such as device 200 according to various embodiments of the invention.
- the apparatus includes a control module 402 connected to a fabrication module 404 by a communication link 406 .
- the control module 402 may comprise any well-known general purpose computer containing a memory that stores computer instructions and a processor for executing the computer instructions.
- the fabrication module 404 can include semiconductor fabrication equipment of any number of well-known types.
- the control module 402 can contain computer instructions, that when executed, cause control signals to be sent to the fabrication module 404 via the communication link 406 .
- the control signals can cause the fabrication module 404 to produce a semiconducting device according to method 300 depicted in FIG. 3 and as shown in FIGS. 2 a - 2 f , according to embodiments.
- the signals could be configured to cause the fabrication module 404 to form a sacrificial layer 208 between two structures 204 in a semiconducting device 200 .
- the signals could cause the fabrication module 404 to form a membrane layer 212 over the sacrificial layer, where the membrane layer is porous to an etch product.
- the fabrication module 404 could also be made to etch the sacrificial layer 208 through the membrane layer 212 and between the structures 204 to create an air gap 210 .
- the sacrificial layer 208 is etched without etching the membrane layer 212 or a buffer layer 206 .
Abstract
Description
- 1. Technical Field
- This disclosure relates generally to improved semiconductor products that employ air gaps as inter-layer insulators, and methods and apparatus for making such semiconductor products.
- 2. Related Art
- Modern semiconductor devices comprise vast numbers of individual structures or components disposed on one or more layers. To ensure that a semiconducting device functions properly, most, if not all, of the individual structures or components need to be electrically isolated from each other. Traditionally, such isolation is accomplished through the use of materials such as dielectric films to act as inter-layer insulators between the various components that make up a typical device. However, as device size decreases, the existing materials have been found to result in a number of problems such as leakage, noise, and a capacitive effect, for example. One approach used to ameliorate the problems associated with the use of dielectric materials as insulators has been to instead use air gaps as insulators.
- Existing methods for forming air gaps and using them as insulation have drawbacks. For instance, existing methods of air-gap formation rely on the so-called “pinching method” whereby a non-conformal (i.e., uneven) film deposition over structures of a semiconducting device is used to create an air gap. In short, this works by depositing the dielectric film more thickly at the top of the structures and more thinly towards the base of the structure. When two structures are adjacent to each other, the thick parts of the film touch at a “pinch point” thereby closing off an air gap beneath the pinch point. However, air gaps created through the pinching method still suffer from various problems. For instance, such air gaps can have problems associated with noise coupling and leakage through pinching portions. Additionally, the pinching method is dependent on the physical layout of the structures that form the semiconductor device; malformed air gaps can be produced when the individual structures are too close or too far from one another. There are also other uncontrollable aspects of the deposition process and the fabrication process that can result in malformed air gaps. Accordingly, new devices and methods as well as method and apparatuses for producing such devices that do not suffer from the same drawbacks as the existing methods are desired.
- Embodiments of the invention include apparatuses and methods of producing semiconductor devices that use an gaps as electrical insulators. Embodiments also include such semiconductor devices. According to some embodiments, the method may include forming a sacrificial layer between a first structure and a second structure. A membrane layer can be formed over the sacrificial layer. Preferably, the membrane can be porous to an etch product. The sacrificial layer may then be etched away to create an air gap without etching the membrane layer or the buffer layer. A cap layer may be disposed on top of the membrane layer according to various embodiments. According to some embodiments, a buffer layer may be formed between the sacrificial layer and the first and second structures.
- According to some embodiments of the invention, a semiconducting device that uses air gaps as electrical insulators is provided. The device may include an air gap insulator disposed between a first and second structure of the semiconducting device. The device also includes a membrane layer disposed above the air gap and between the first and second structures. The membrane layer is porous to an etching product that is capable of etching the sacrificial layer without etching the membrane layer. According to various embodiments, the device may also include a cap layer disposed on top of the membrane layer. A buffer layer may be formed between the first and second structures and the air gap.
- Further features and advantages of embodiments of the invention, as well as the structure and operation of various embodiments of the invention, are described in detail below with reference to the accompanying drawings. It is noted that the invention is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative purposes only Additional embodiments will be apparent to a person skilled in the relevant art(s) based on the teachings contained herein.
- Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts. Further, the accompanying drawings, which are incorporated herein and form part of the specification, illustrate embodiments of the present invention, and, together with the description, further serve to, explain the principles of the invention and to enable a person skilled in the relevant art(s) to make and use the invention.
-
FIG. 1 illustrates a semiconductor device with air gaps created according to the pinch method. -
FIGS. 2 a-2 i illustrate a semiconductor device after performing various steps in the manufacture process according to embodiments of the present invention. -
FIG. 3 is a flow chart illustrating a method of producing a semiconducting device with air gaps used as insulators according to embodiments of the invention. -
FIG. 4 is a functional block diagram of an apparatus used to produce a semiconducting device according to embodiments of the invention. - The features and advantages of embodiments of the present invention will become more apparent from the detailed description set forth below when taken in conjunction with the drawings, in which like reference characters identify corresponding elements throughout. In the drawings, like reference numbers generally indicate identical, functionally similar, and/or structurally similar elements.
- The following detailed description refers to the accompanying drawings that illustrate exemplary embodiments consistent with this invention. Other embodiments are possible, and modifications can be made to the embodiments within the spirit and scope of the invention. Therefore, the detailed description is not meant to limit the invention. Rather, the scope of the invention is defined by the appended claims.
-
FIG. 1 illustrates a semiconducting device with air gap insulators produced according to an existing non-conformal “pinching method.” Thedevice 100 includes a number ofstructures base 102, which may comprise a semiconductor substrate. Between each of the structures 104 is agap buffer layer 106 disposed on top of them. In this case, it can be seen thatbuffer layer 106 is non-conformally deposited. A conformal film is a film that is deposited on an uneven surface, but that has an even thickness. While few films are truly conformal when deposited (due to slight uncontrollable variations in their thickness), as used herein, conformal refers to films that have substantially even thicknesses. Non-conformal films, conversely, are films that have an uneven thickness—i.e., they are thicker at some points and thinner at others.Buffer layer 106 as depicted inFIG. 1 is such a non-conformal film because, as can be seen, it is thicker toward the top of structures 104 and thinner toward thebase 102. Typically,buffer layer 106 comprises a dielectric such as Si02. - As shown in
FIG. 1 , thestructures FIG. 1 ,gap 110 a is open at the top because thebuffer layer 106 does not touch as it should atpoint 108 a. Thus, an air gap is not properly formed between the structures, 104 a and 104 b.Gap 110 b, on the other hand, is closed by the “pinching” of thebuffer layer 106 betweenstructures pinch point 108 b. Thus, an air gap is properly formed betweenstructures pinch point 108 b). - Stated another way, there is no pinch point associated with
air gap 110 a because the distance betweenstructure buffer layer 106 coveringstructures buffer layer 106 cannot “pinch” at a pinch point. As can be seen, the “pinching” method is dependent, to a certain extent, on the physical dimensions of the various structures 104 that comprise thesemiconducting device 100. Whilegap 110 a does constitute an air gap and it can insulate structure 104 a from 104 b, the open top can sometimes foreclose the possibility of another layer, such as a cap layer, being formed over thegap 110 a atpoint 108 a. As depicted inFIG. 1 , the efficacy of the pinch method of creating air gaps is, at least in part, dependent on the actual physical geometry of the semiconducting device. It would be desirable to have a method of creating air gaps that is independent of the physical geometry of the semiconducting device. -
FIGS. 2 a-2 f depict asemiconducting device 200 with air gaps as insulators. -
Semiconductor 200 was formed using a manufacturing process according to embodiments of the present invention.FIG. 2 a depictsdevice 200 that includes a number ofdifferent structures - The structures 204 are disposed on a
base 202, which may comprise a semiconducting substrate, the top of another layer of device components, or the like. Additionally,gaps structures structures - As shown in
FIG. 2 a, abuffer layer 206 is disposed over the structures 204. Thebuffer layer 206 may comprise a suitable dielectric film composed of, for instance, silicon dioxide (SiO2) that is confomally formed on top of the structures 204. According to some embodiments, thebuffer layer 206 may be formed using any of the well-known method such as deposition. Deposition can comprise any process that grows, coats, or transfers material onto a substrate. Some well-known technologies include physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE), atomic layer deposition (ALD), and plasma-enhanced CVD (PECVD), amongst others. Any of these methods may be used according to various embodiments. Thebuffer layer 206 may be used in embodiments where additional protection is required for structures 204 is required during etching of thesacrificial layer 208. This is required, for instance, when the etching product that is used to etch thesacrificial layer 208 would also etch structures 204. Thebuffer layer 206 either does not react with the etch product at all or reacts at a slower rate than the with the etch product thansacrificial layer 208. Accordingly, thebuffer layer 206 serves to isolate the structures 204 from the effects of the etching products or chemicals. -
FIG. 2 b depicts thedevice 200 after asacrificial layer 208 has been formed on top of the structures 204 and between them ingaps sacrificial layer 208 comprises a material that has etching selectivity (i.e., can be etched separately) with thebuffer layer 206. In other words,sacrificial layer 208 andbuffer layer 206 are formed from different materials such that etching, products can etch one but not the other. According to various embodiments, thesacrificial layer 208 can comprise silicon (Si), Aluminum (Al), Germanium (Ge), or an organic film such as photo resist. As shown inFIG. 2 b, the same material is used for thesacrificial layer 208 to fill ingaps sacrificial layer 208 forgap 210 a and photoresist as thesacrificial layer 208 forgap 210 b , according to some embodiments. -
FIG. 2 c shows thedevice 200 after removal of the portion ofsacrificial layer 208 extending beyond the structures 204. According to various embodiments, thesacrificial layer 208 can be planarized with polish or etch back to be roughly even with the tops of the structures 204 or thebuffer 206 disposed on top of the structures 204. While thesacrificial layer 208 is preferably planarized, according to various embodiments, the step may be neither necessary nor desirable and may, therefore, be omitted. -
FIG. 2 d depicts thedevice 200 aftermembranes sacrificial layer 208. Themembrane layer 212 is preferably a material that is porous to chemical species and etch products that can be used to etch thesacrificial layer 208. According to some embodiments, themembrane layer 212 can be formed out of a native oxide of Si or Al by light oxidation of the surface of thesacrificial layer 208 using oxidation species generated in plasma, a radical environment, or ozone. According to other embodiments, themembrane layer 212 can be formed onto the sacrificial layer by sputtering or deposition (e.g., chemical vapor deposition). In an embodiment, themembrane layer 212 may have a thickness around 5 to 200 Å (0.5 to 20 nm), but it can be thicker or thinner according to various embodiments. Themembrane layer 212 can also be formed by forming a native oxide using a wet chemical treatment according to various embodiments. This native oxide formed by a wet chemical treatment will be a membrane with the thickness ranged 5 to 20 Å (0.5 to 2 nm). The wet chemical treatment can be implemented for inorganic materials such as Si, Al, and Ge of sacrificial layer. According to various embodiments, the wet chemical treatment may comprise a liquid that includes actively oxidize-spices such as H2O, H2O2, H2SO4, NH4OH, HNO3. -
FIG. 2 e depicts thedevice 200 after thesacrificial layer 208 has been etched leavinggaps sacrificial layer 208 is preferably etched using an etch product for which themembrane layer 212 is porous and that does not etchbuffer layer 206. For instance, according to some embodiments, thesacrificial layer 208 may be etched using Cl2, KOH, TMAH (tetra-methyl-amino-hydroxyl), or using gas phase etching with, for instance, H2, HCl, O2, H2O (vapor or gas), O3, HF, F2, and Carbon-Fluoride compounds with Cl2 and XeF2. Additionally, according to some embodiments, a combination of etching products may be used. -
FIG. 2 f depicts thedevice 200 after acap layer 214 has been formed on top of thebuffer layer 206 and themembrane layer 212. Thecap layer 214 can be employed to seal the air gaps (themembrane 212 may be porous to air and thus not serve to seal the air gaps). According to various embodiments, thecap layer 214 can be formed using any material and process such as CVD of SiO2, sputtered Al2O3, or SiN by high viscosity liquid source. Thecap layer 214 preferably comprises a dielectric material, however, it may comprise any suitable material. For instance, according to some embodiments, thecap layer 214 may comprise metal layers, semiconducting layers, or a combination of dielectric, metal, and semiconducting layers, depending on the various requirements. - Thus, as can be seen in
FIG. 2 f, asemiconducting device 200 has been formed with a number of air gaps 210 after performing the steps depicted inFIGS. 2 a-2 c. As shown inFIG. 2 f,air gaps membrane layers 21 a and 212 b, respectively and by thecap layer 214. In contrast to the air gaps 110 depicted inFIG. 1 , the air gaps 210 are entirely closed by the membrane layers 212 irrespective of the physical geometry of the placement of the structures 204 relative to one another. That is, despite the fact thatstructures structures membrane layer 212 and thecap layer 214. Thesemiconducting device 200 depicted inFIG. 2 f, therefore, has reduced noise coupling and leakage when compared to thesemiconducting device 100 fromFIG. 1 , and the formation is more controllable and can be accomplished with varying physical geometry. -
FIGS. 2 g-2 i depict an alternative embodiment wheremembrane layer 212 is deposited over the entire surface ofdevice 200.FIG. 2 g depicts thedevice 200 aftermembrane 212 has been formed on top of thesacrificial layer 208. As with the previous embodiments,membrane layer 212 is preferably a material that is porous to chemical species and etch products that can be used to etch thesacrificial layer 208. According to some embodiments, themembrane layer 212 can be formed out of a native oxide of Si or Al by light oxidation of the surface of thesacrificial layer 208 using oxidation species generated in plasma, a radical environment, or ozone. According to other embodiments, themembrane layer 212 can be formed onto the sacrificial layer by sputtering or deposition (e.g., chemical vapor deposition). In an embodiment, themembrane layer 212 may have a thickness around 5 to 200 Å (0.5 to 20 nm), but it can be thicker or thinner according to various embodiments. Themembrane layer 212 can also be formed by forming a native oxide using a wet chemical treatment according to various embodiments. This native oxide formed by a wet chemical treatment will be a membrane with the thickness ranged 5 to 20 Å (0.5 to 2 nm). The wet chemical treatment can be implemented for inorganic materials such as Si, Al, and Ge of sacrificial layer. According to various embodiments, the wet chemical treatment may comprise a liquid that includes actively oxidize-spices such as H2O, H2O2, H2SO4, NH4OH, HNO3. -
FIG. 2 h depicts thedevice 200 after thesacrificial layer 208 has been etched leavinggaps device 200 at this point is similar to thedevice 200 depicted inFIG. 2 e, except that themembrane 212 layer is continuous. As discussed above, thesacrificial layer 208 is preferably etched using an etch product for which themembrane layer 212 is porous and that does not etchbuffer layer 206. For instance, according to some embodiments, thesacrificial layer 208 may be etched using Cl 2, KOH, TMAH (tetra-methyl-amino-hydroxyl), or using gas phase etching with, for instance, H2, HCl, O2, H2O (vapor or gas), O3, HF, F2, and Carbon-Fluoride compounds with Cl2 and XeF2. Additionally, according to some embodiments, a combination of etching products may be used. -
FIG. 2 i depicts thedevice 200 after acap layer 214 has been formed on top of thebuffer layer 206 and themembrane layer 212. Again, thedevice 200 depicted inFIG. 2 i is similar to thedevice 200 depicted in 2 f except that themembrane layer 212 is continuous. As previously discussed, thecap layer 214 can be employed to seal the air gaps (themembrane 212 may be porous to air and thus not serve to seal the air gaps). According to various embodiments, thecap layer 214 can be formed using any material and process such as CVD of SiO2, sputtered Al2O3, or SiN by high viscosity liquid source. Thecap layer 214 preferably comprises a dielectric material, however, it may comprise any suitable material. For instance, according to some embodiments, thecap layer 214 may comprise metal layers, semiconducting layers, or a combination of dielectric, metal, and semiconducting layers, depending on the various requirements. -
FIG. 3 is a flowchart illustrating aprocess 300 of constructing a semiconducting device that uses an air gap as insulation according to various embodiments. For the purposes of illustration,flowchart 300 will be described with continuing reference toFIGS. 2 a-2 f, though the invention is not limited to this example. At step 302 abuffer layer 206 can be formed on semiconductor device structures 204 (FIG. 2 a). Thebuffer layer 206 preferably comprises a dielectric such as SiO2 and is conformal. According to some embodiments, thebuffer layer 206 can be formed by deposition using CVD, PECVD, ALD, or any of the other well-known deposition methods outlined above. - At
step 304, asacrificial layer 208 is deposited on top of thebuffer layer 206 and between device structures 204 (FIG. 2 b). Thesacrificial layer 208 may comprise any material that has an etching or polishing selectivity with thebuffer layer 206. That is, thesacrificial layer 208 may be any material that can be etched by processes or means that have will little or no effect on thebuffer layer 206. In some embodiments, thesacrificial layer 208 may comprise Si, Al, or an organic film such as photo resist. - At
step 306, the excesssacrificial layer 208 is removed by, for instance, polishing or etching (FIG. 2 c). According to embodiments of the invention, thesacrificial layer 208 can be removed so that the top of the structures 204 are exposed and that thesacrificial layer 208 is substantially flush with the top of the structure 204 or thebuffer layer 206. Alternatively, thesacrificial layer 208 can be removed such that it is concave with respect to the top of the structures 204 orbuffer layer 206. - At
step 308, themembrane layer 212 can be formed over the remaining portion of the sacrificial layer 208 (FIG. 2 d). According to some embodiments, themembrane layer 212 may be formed over the entirety of the device—i.e., over both the sacrificial layer and the top portion of the structures 204/buffer layer 206. Themembrane layer 212 may be comprised of any material that will allow etch chemical species and/or etch product to pass through to thesacrificial layer 208. For instance, according to some embodiments, themembrane layer 212 comprises a native oxide of Si or Al (depending on the composition of the sacrificial material) and can be formed by light oxidation of the surface of the using oxidation species that are generated in a plasma/radical environment or in ozone. In some embodiments, themembrane layer 212 may be formed onto thesacrificial layer 208 by sputtering or deposition. - At
step 310, thesacrificial layer 208 can be removed from thedevice 200 by selective etching thereby leaving air gaps 210 in the spaces 210 once occupied by the sacrificial layer 208 (FIG. 2 e). Thesacrificial layer 208 may be etched using gasses that pass through themembrane layer 212 and react with the materials of thesacrificial layer 208, but that do not or substantially do not react with the material comprising themembrane 212 orbuffer 206. That is, the process of etching thesacrificial material 208 leaves themembrane layer 212 and buffer 206 intact. Thebuffer layer 206 does not react with the products used to etch thesacrificial layer 208 according to various embodiments and can, therefore, use to isolate the structures 204 from the effects of the etching product. According to some embodiments, thebuffer layer 206 may partially react or react more slowly with the etching product than thesacrificial layer 208. However, in such embodiments, thebuffer layer 206 can be made of sufficient thickness to still isolate the structures 204 from the effects of the etching product. - At
step 312, a cap layer is formed or top of the membrane layer thecap layer 214 can be employed to deal the air gaps. According to various embodiments, thecap layer 214 can be used for any material and process such as CVD of SiO2, sputtered Al2O3, or SiN by high viscosity liquid source. While, in an embodiment, thecap layer 214 comprises a dielectric material, it may sometimes be desirable to form it of metal layers, depending on the various requirements. -
FIG. 4 is a functional block diagram of anapparatus 400 for producing a semiconducting device such asdevice 200 according to various embodiments of the invention. The apparatus includes acontrol module 402 connected to afabrication module 404 by acommunication link 406. According to various embodiments, thecontrol module 402 may comprise any well-known general purpose computer containing a memory that stores computer instructions and a processor for executing the computer instructions. - The
fabrication module 404 can include semiconductor fabrication equipment of any number of well-known types. Thecontrol module 402 can contain computer instructions, that when executed, cause control signals to be sent to thefabrication module 404 via thecommunication link 406. The control signals can cause thefabrication module 404 to produce a semiconducting device according tomethod 300 depicted inFIG. 3 and as shown inFIGS. 2 a-2 f, according to embodiments. For instance, the signals could be configured to cause thefabrication module 404 to form asacrificial layer 208 between two structures 204 in asemiconducting device 200. Additionally, according to embodiments, the signals could cause thefabrication module 404 to form amembrane layer 212 over the sacrificial layer, where the membrane layer is porous to an etch product. Thefabrication module 404 could also be made to etch thesacrificial layer 208 through themembrane layer 212 and between the structures 204 to create an air gap 210. According to embodiments, thesacrificial layer 208 is etched without etching themembrane layer 212 or abuffer layer 206. - It is to be appreciated that the Detailed Description section, and not the Summary and Abstract sections, is intended to be used to interpret the claims. The Summary and Abstract sections may set forth one or more but not all exemplary embodiments of the present invention as contemplated by the inventor(s), and thus, are not intended to limit the present invention and the appended claims in any way.
- Embodiments of the present invention have been described above with the aid of functional building blocks illustrating the implementation of specified functions and relationships thereof The boundaries of these functional building blocks have been arbitrarily defined herein for the convenience of the description. Alternate boundaries can be defined so long as the specified functions and relationships thereof are appropriately performed.
- The foregoing description of the specific embodiments will so fully reveal the general nature of the invention that others can, by applying knowledge within the skill of the art, readily modify and/or adapt for various applications such specific embodiments, without undue experimentation, without departing from the general concept of the present invention. Therefore, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed embodiments, based on the teaching and guidance presented herein. It is to be understood that the phraseology or terminology herein is for the purpose of description and not of limitation, such that the terminology or phraseology of the present specification is to be interpreted by the skilled artisan in light of the teachings and guidance.
- The breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
Claims (22)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/682,826 US20140138790A1 (en) | 2012-11-21 | 2012-11-21 | Inter-Layer Insulator for Electronic Devices and Apparatus for Forming Same |
PCT/US2013/070309 WO2014081634A1 (en) | 2012-11-21 | 2013-11-15 | Inter-layer insulator for electronic devices and apparatus for forming same |
US16/154,907 US11430689B2 (en) | 2012-11-21 | 2018-10-09 | Inter-layer insulator for electronic devices and apparatus for forming same |
Applications Claiming Priority (1)
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US13/682,826 US20140138790A1 (en) | 2012-11-21 | 2012-11-21 | Inter-Layer Insulator for Electronic Devices and Apparatus for Forming Same |
Related Child Applications (1)
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US16/154,907 Continuation US11430689B2 (en) | 2012-11-21 | 2018-10-09 | Inter-layer insulator for electronic devices and apparatus for forming same |
Publications (1)
Publication Number | Publication Date |
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US20140138790A1 true US20140138790A1 (en) | 2014-05-22 |
Family
ID=50727163
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/682,826 Abandoned US20140138790A1 (en) | 2012-11-21 | 2012-11-21 | Inter-Layer Insulator for Electronic Devices and Apparatus for Forming Same |
US16/154,907 Active US11430689B2 (en) | 2012-11-21 | 2018-10-09 | Inter-layer insulator for electronic devices and apparatus for forming same |
Family Applications After (1)
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US16/154,907 Active US11430689B2 (en) | 2012-11-21 | 2018-10-09 | Inter-layer insulator for electronic devices and apparatus for forming same |
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US (2) | US20140138790A1 (en) |
WO (1) | WO2014081634A1 (en) |
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Also Published As
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US11430689B2 (en) | 2022-08-30 |
US20190043751A1 (en) | 2019-02-07 |
WO2014081634A1 (en) | 2014-05-30 |
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