US20130228319A1 - Cooling device - Google Patents
Cooling device Download PDFInfo
- Publication number
- US20130228319A1 US20130228319A1 US13/775,557 US201313775557A US2013228319A1 US 20130228319 A1 US20130228319 A1 US 20130228319A1 US 201313775557 A US201313775557 A US 201313775557A US 2013228319 A1 US2013228319 A1 US 2013228319A1
- Authority
- US
- United States
- Prior art keywords
- main body
- pipe
- cooling device
- port
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a cooling device.
- Japanese Laid-Open Patent Publication No. 2008-211147 describes a coupling structure for coupling a pipe to a heat exchanger.
- the coupling structure includes two plates that are pressed and formed in conformance with each other. Each plate includes a peripheral portion and a shallow recess formed by the remaining portion of the plate.
- the peripheral portion includes a groove, which has a semicircular cross-section and connects the edge of the peripheral portion with the recess.
- the two plates are stacked so that their recesses face each other and their grooves face each other.
- a pipe is fitted to the grooves. In this state, the two plates are brazed and fixed to each other so that the plates are in contact with the pipe in a manner impervious to liquids.
- An annular first protrusion which is formed along the outer circumference of the pipe, comes in contact with the edge of the entire groove.
- the pipe may be deformed by heat when brazed. This may result in displacement of the pipe. More specifically, the brazing is performed at, for example, 600° C., at which aluminum components may expand or contract. This may bend the main body of the cooling device and displace the pipe. Further, the heat may deform the pipe.
- one aspect of the present invention is a cooling device provided with a main body including a first shell plate and a second shell plate each having a peripheral portion.
- the first shell plate and the second shell plate are integrated together by brazing the peripheral portions, and the main body includes a coolant passage and a port.
- a pipe is coupled to the main body.
- the pipe allows for circulation of coolant in the coolant passage through the port.
- a resin portion is molded on an outer surface of the main body at where the pipe is coupled to the main body to fix the pipe to the main body.
- FIG. 1A is a front view of an inverter module according to one embodiment of the present invention.
- FIG. 1B is a plan view of the inverter module shown in FIG. 1A ;
- FIG. 2A is a front view of the inverter module shown in FIG. 1A in a state in which a resin portion is eliminated;
- FIG. 2B is a plan view of the inverter module shown in FIG. 1A in a state in which the resin portion is eliminated;
- FIG. 3 is a cross-sectional view showing the inverter module of FIG. 1A where a pipe is coupled;
- FIG. 4 is a circuit diagram of the inverter module shown in FIG. 1A ;
- FIG. 5A is a front view showing a main body and insulating substrates of the cooling device of FIG. 1A ;
- FIG. 5B is a plan view showing the main body and insulating substrates of the cooling device of FIG. 1A ;
- FIG. 6 is a cross-sectional view taken along VI-VI in FIG. 5B ;
- FIG. 7A is a front view illustrating a manufacturing process of the inverter module
- FIG. 7B is a plan view showing the inverter module of FIG. 7A ;
- FIG. 8A is a front view illustrating a manufacturing process of the inverter module
- FIG. 8B is a plan view showing the inverter module of FIG. 8A ;
- FIG. 9 is a cross-sectional view showing the inverter module of FIG. 1A where a pipe is coupled and illustrating a manufacturing process of the inverter module;
- FIG. 10 is a front view showing the inverter module
- FIG. 11 is a front view showing the inverter module
- FIG. 12 is a front view showing the inverter module
- FIG. 13 is a cross-sectional view showing a modification of an inverter module where a pipe is coupled
- FIG. 14 is a partial cross-sectional view showing a modification of an inverter module
- FIG. 15A is a partial cross-sectional view showing a modification of an inverter module
- FIG. 15B is a partial side view showing the inverter module of FIG. 15A ;
- FIG. 16A is a partial cross-sectional view showing a modification of an inverter module.
- FIG. 16B is a partial side view showing the inverter module of FIG. 16A .
- an inverter module 10 includes a cooling device.
- the inverter module 10 is resin-molded and includes substrates on which semiconductor elements (chips) are mounted.
- the inverter module 10 includes a water-cooling type cooling device 20 , four insulating substrates 31 , 32 , 33 and 34 , six transistors (chips) Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 , six diodes (chips) D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 , and a molded resin portion 40 .
- the resin portion 40 may be formed from, for example, epoxy resin.
- FIG. 4 shows the circuit configuration of the inverter module 10 .
- the inverter module 10 includes an inverter 50 , which converts DC power supplied from an external device, to AC power. Then, the inverter 50 supplies the AC power to a travel motor 60 . This drives the motor 60 , which produces rotation.
- the inverter 50 includes a plurality of arms, namely, a U-phase arm, a V-phase arm, and a W-phase arm arranged in parallel between a power supply line and a ground line.
- the arms include two series-connected transistors (IGBT) Q 1 and Q 2 , Q 3 and Q 4 , and Q 5 and Q 6 , respectively.
- Diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 are arranged between the collector and emitter of the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 , respectively. Each diode allows for current to pass from the emitter to the collector of the corresponding transistor.
- the insulating substrates 31 , 32 , 33 , and 34 are formed by direct brazed aluminum (DBA) substrates.
- Each DBA substrate includes a ceramic substrate 35 , an aluminum layer 36 , which is formed on a first surface of the ceramic substrate 35 , and an aluminum layer 37 , which is formed on a second surface of the ceramic substrate 35 .
- the aluminum layer 36 is patterned on the first surface of the ceramic substrate 35 .
- the aluminum layer 37 is patterned on the second surface of the ceramic substrate 35 .
- the cooling device 20 includes a main body 21 , which is a tetragonal box having a low profile, a resin inlet pipe 22 , and a resin outlet pipe 23 .
- the main body 21 of the cooling device 20 is formed from aluminum.
- the main body 21 includes an upper plate 24 , which functions as a first shell plate, a lower plate 25 , which functions as a second shell plate, and inner fins 26 , which are undulated.
- a peripheral portion of the upper plate 24 and a peripheral portion of the lower plate 25 are swaged together. In this state, the peripheral portions of the upper plate 24 and the lower plate 25 are brazed to each other. This brazes the upper plate 24 and the lower plate 25 at their peripheral portions in the main body 21 .
- the inner fins 26 are also brazed to and between the upper plate 24 and lower plate 25 .
- the main body 21 includes a coolant passage P 1 (refer to FIGS. 3 and 6 ).
- the inlet pipe 22 is coupled to the upper surface of the main body 21 and allows for coolant to be supplied into the main body 21 through a first port 90 a (refer to FIGS. 5A and 5B ), which is formed in the main body 21 .
- the outlet pipe 23 is coupled to the upper surface of the main body 21 and allows for coolant to be discharged from the main body 21 through a second port 90 b (refer to FIGS. 5A and 5B ), which is formed in the main body 21 .
- a pump sends coolant into the main body 21 through the inlet pipe 22 and discharges the coolant from the main body 21 through the outlet pipe 23 .
- the pipes 22 and 23 allows for coolant to circulate through the ports 90 a and 90 b, which are formed in the main body 21 .
- the insulating substrates 31 , 32 , 33 , and 34 on which the transistors (chips) Q 1 to Q 6 and the diodes (chips) D 1 to D 6 functioning as semiconductor elements are mounted, are brazed to the surface of the main body 21 .
- the four insulating substrates 31 , 32 , 33 , and 34 are brazed and joined with the upper surface of the main body 21 of the cooling device 20 . That is, the aluminum layer 36 under the ceramic substrate 35 in each of the four insulating substrates 31 , 32 , 33 , and 34 is brazed and joined with the upper surface of the cooling device 20 .
- the aluminum layer 37 on the ceramic substrate 35 in the insulating substrate 31 is a wiring material.
- the transistor (chip) Q 1 and the diode (chip) D 1 are soldered and joined with the upper surface of the aluminum layer 37 .
- the aluminum layer 37 on the ceramic substrate 35 in the insulating substrate 32 is a wiring material.
- the transistor (chip) Q 3 and the diode (chip) D 3 are soldered and joined with the upper surface of the aluminum layer 37 .
- the aluminum layer 37 on the ceramic substrate 35 in the insulating substrate 33 is a wiring material.
- the transistor (chip) Q 5 and the diode (chip) D 5 are soldered and joined with the upper surface of the aluminum layer 37 .
- the aluminum layer 37 on the ceramic substrate 35 in the insulating substrate 34 is a wiring material.
- the transistors (chips) Q 2 , Q 4 , and Q 6 and the diodes (chips) D 2 , D 4 , and D 6 are soldered and joined with the upper surface of the aluminum layer 37
- the collector terminals on the upper surfaces of the transistors Q 1 , Q 3 , and Q 5 and the cathode terminals on the upper surfaces of the diodes D 1 , D 3 , and D 5 are joined with a conductive plate 70 , which functions as an external connection terminal, by solder 71 .
- the collector terminal on the upper surface of the transistor Q 2 , the cathode terminal on the upper surface of the diode D 2 , and the aluminum layer 37 in the insulating substrate 31 (the emitter of the transistor Q 1 and the anode of the diode D 1 ) are joined with a conductive plate 72 , which functions as an external connection terminal, by solder 73 .
- the collector terminal on the upper surface of the transistor Q 4 , the cathode terminal on the upper surface of the diode D 4 , and the aluminum layer 37 in the insulating substrate 32 are joined with a conductive plate 74 , which functions as an external connection terminal, by solder 75 .
- the collector terminal on the upper surface of the transistor Q 6 , the cathode terminal on the upper surface of the diode D 6 , and the aluminum layer 37 in the insulating substrate 33 are joined with a conductive plate 76 , which functions as an external connection terminal, by solder 77 .
- a conductive plate 78 which functions as an external connection terminal, is soldered to the aluminum layer 37 on the ceramic substrate 35 in the insulating substrate 34 .
- the conductive plates 70 , 72 , 74 , 76 , and 78 are formed from copper.
- the conductive plates 70 , 72 , 74 , 76 , and 78 each include a first end a second end.
- the first ends of the conductive plates 70 , 72 , 74 , 76 , and 78 are electrically connected to the corresponding transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 and the corresponding diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 .
- the second end of the conductive plate 70 is bent upward.
- the second end of the conductive plate 72 is bent upward.
- the second end of the conductive plate 74 is bent upward.
- the second end of the conductive plate 76 is bent upward.
- the second end of the conductive plate 78 is bent upward.
- connection pin seats 80 , 81 , 82 , 83 , 84 , and 85 are fixed to the upper surface of the main body 21 of the cooling device 20 .
- Three connection pins 86 which function as external connection terminals, are fixed to each of the connection pin seats 80 , 81 , 82 , 83 , 84 , and 85 .
- the connection pins 86 are formed from copper.
- One of the three connection pins 86 forms a gate voltage application line, and the two remaining connection pins 86 forming an emitter voltage detection line and an emitter temperature detection line.
- the three connection pins 86 include first terminals electrically connected by wires W formed by a wiring material, or wire-bonded, to the transistors (chips) Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 .
- the three connection pins 86 include the first terminals, which are electrically connected to the corresponding transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 , and second terminals, which are bent upward.
- the resin portion 40 covers the components arranged on the upper surface of the main body 21 of the cooling device 20 (i.e., the insulating substrates 31 , 32 , 33 , and 34 , the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 , the diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 , the conductive plates 70 , 72 , 74 , 76 , and 78 , the connection pins 86 , and the wire W).
- the conductive plates 70 , 72 , 74 , 76 , and 78 include upright portions 70 a, 72 a, 74 a, 76 a, and 78 a with upper ends exposed from the resin portion 40 .
- the three connection pins 86 which are connected to each of the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 , include upright portions 86 a with upper ends exposed from the resin portion 40 .
- the portion where the inlet pipe 22 is coupled to the main body 21 of the cooling device 20 and the portion where the outlet pipe 23 is coupled to the main body 21 are formed as shown in FIG. 3 .
- the main body 21 has a top panel 21 a, which includes the first port 90 a and the second port 90 b, and a positioning part 91 , which projects upward and entirely around each of the first port 90 a and second port 90 b.
- the inlet pipe 22 and the outlet pipe 23 each have a thick lower end, which includes a recess 27 open downward and extending along the entire circumference of the pipe.
- the main body 21 closes the opening of the recess 27 .
- the positioning part 91 is arranged in the recess 27 .
- An O-ring 28 is set in the recess 27 .
- the resin portion 40 fixes the main body 21 of the cooling device 20 with the inlet pipe 22 and the outlet pipe 23 .
- the O-ring 28 is in close contact with the top panel 21 a of the main body 21 and also with the bottom surface of the recess 27 .
- the main body 21 and the inlet pipe 22 are in contact with each other in a manner impervious to liquid
- the main body 21 and the outlet pipe 23 are also in contact with each other in a manner impervious to liquid.
- the positioning part 91 which positions the O-ring 28 relative to the main body 21 , is formed on the main body 21 where the inlet pipe 22 is coupled to the main body 21 and where the outlet pipe 23 is coupled to the main body 21 .
- a positioning part 29 which positions the O-ring 28 relative to the main body 21 , is formed on the inlet pipe 22 and the outlet pipe 23 where the inlet pipe 22 is coupled to the main body 21 and where the outlet pipe 23 is coupled to the main body 21 .
- the positioning part 91 positions the O-ring 28 from a radially inner side
- the positioning part 29 positions the O-ring 28 from a radially outer side.
- Coolant is supplied to the inlet pipe 22 of the cooling device 20 .
- the coolant enters the main body 21 of the cooling device 20 through the inlet pipe 22 .
- the coolant flows through the main body 21 of the cooling device 20 toward the outlet pipe 23 .
- the coolant enters the outlet pipe 23 to be discharged from the outlet pipe 23 .
- the six transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 of the inverter module 10 each generate heat when undergoing a switching operation.
- the six diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 generate heat when activated.
- the heat generated by the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 is transferred to the main body 21 of the cooling device 20 through the insulating substrates (DBA substrates) 31 , 32 , 33 , and 34 , which transfer heat to the coolant flowing through the main body 21 of the cooling device 20 .
- the heat generated by the six diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 is transferred to the main body 21 of the cooling device 20 through the insulating substrates (DBA substrates) 31 , 32 , 33 , and 34 , which transfer heat to the coolant flowing through the main body 21 of the cooling device 20 .
- FIGS. 1A to 3 and FIGS. 5A to 9 A method for manufacturing the inverter module 10 will now be described with reference to FIGS. 1A to 3 and FIGS. 5A to 9 .
- the insulating substrates (DBA substrates) 31 , 32 , 33 , and 34 are prepared.
- the aluminum layer 36 is patterned on one surface of the ceramic substrate 35
- the aluminum layer 37 is patterned on the other surface of the ceramic substrate 35 .
- the peripheral portions of the upper plate 24 and lower plate 25 which form the main body 21 of the cooling device 20 , are swaged and brazed together. Further, the undulated inner fins 26 are also brazed between the upper plate 24 and the lower plate 25 .
- the insulating substrates (DBA substrates) 31 , 32 , 33 , and 34 are brazed to the upper surface of the main body 21 of the cooling device 20 .
- the aluminum layer 36 under the ceramic substrate 35 in each of the four insulating substrates 31 , 32 , 33 , and 34 is brazed to the upper surface of the cooling device 20 .
- the brazing is performed at about 600° C. This integrates the main body 21 of the cooling device with the insulating substrates 31 , 32 , 33 , and 34 .
- each of the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 and each of the diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 are soldered to the upper surface of the aluminum layer 37 on the ceramic substrate 35 in the corresponding one of the insulating substrates 31 , 32 , 33 , and 34 .
- connection pin seats 80 , 81 , 82 , 83 , 84 , and 85 , on which the connection pins 86 are fixed, are fixed to the upper surface of the main body 21 of the cooling device 20 .
- connection pins 86 are joined with the corresponding transistors (chips) Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 by the wire W.
- the inlet pipe 22 and the outlet pipe 23 are mounted on the main body 21 of the cooling device 20 .
- the O-ring 28 is held between the main body 21 and the lower end of each of the inlet pipe 22 and outlet pipe 23 . In this state, the inlet pipe 22 and the outlet pipe 23 are arranged upright on the main body 21 of the cooling device 20 .
- the resin portion 40 is used to seal and integrate the components mounted on the main body 21 of the cooling device 20 .
- the components mounted on the main body 21 of the cooling device 20 include the portion where the main body 21 and the inlet pipe 22 are coupled, the portion where the main body 21 and the outlet pipe 23 are coupled, the insulating substrates 31 , 32 , 33 , and 34 , the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 , the diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 , the conductive plates 70 , 72 , 74 , 76 , and 78 , the connection pins 86 , and the wire W.
- the resin portion 40 is molded at about 120° C. This fixes the inlet pipe 22 and the outlet pipe 23 to the main body 21 with the resin portion 40 .
- the inlet pipe 22 and the outlet pipe 23 can be fixed to the main body 21 with the resin portion 40 at the same time as when sealing the semiconductor elements (the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , and Q 6 and the diodes D 1 , D 2 , D 3 , D 4 , D 5 , and D 6 ), which are soldered, with the resin portion 40 .
- the pipes 22 and 23 are fixed to the main body 21 when the main body 21 is resin-sealed.
- the resin-sealing is performed at the same time as when sealing the circuit components of the module (the transistors Q 1 to Q 6 , the diodes D 1 to D 6 , the conductive plates 72 , 74 , 76 , and 78 , the connection pins 86 , and the wire W).
- the pipes 22 and 23 can be exchanged with other pipes whenever necessary using the main body 21 of the cooling device 20 as a common part.
- straight pipes 22 a and 23 a may be coupled to the main body 21 of the cooling device 20 and extended upright from the upper surface of the main body 21 .
- L-shaped pipes 22 b and 23 b may be coupled to the main body 21 so that the pipes 22 b and 23 b extend horizontally and in the longitudinal direction of the main body 21 of the cooling device 20 .
- pipes 22 c and 23 c may be coupled to the main body 21 so that the pipes 22 c and 23 c extend diagonally relative to the upper surface of the main body 21 of the cooling device 20 . More specifically, the upper longitudinal surface of the main body 21 is horizontal, and the pipes 22 c and 23 c are inclined relative to the upper surface of the main body 21 .
- the cooling device 20 includes the main body 21 and pipes (i.e., the inlet pipe 22 and the outlet pipe 23 ).
- the inlet pipe 22 is coupled to the main body 21 and supplies the coolant through the first port 90 a, which is formed in the main body 21 .
- the outlet pipe 23 is coupled to the main body 21 and discharges coolant through the second port 90 b, which is formed in the main body 21 .
- the resin portion 40 is molded onto a coupling portion, that is, the outer surface of the main body 21 where the pipes (i.e., the inlet pipe 22 and the outlet pipe 23 ) are coupled to the main body 21 .
- the conventional structure is susceptible to heat deformation that may occur in a brazing process.
- the present embodiment molds the resin portion 40 subsequent to brazing. This prevents displacement of the inlet pipe 22 and the outlet pipe 23 that would be caused the heat generated during the brazing.
- the brazing is performed at about 600° C.
- the resin molding is performed at about 120° C.
- the structure of the present embodiment is less susceptible to heat deformation that would occur during the brazing.
- the cooling device 20 can coupled the pipes 22 and 23 to the main body 21 while suppressing displacement of the pipes 22 and 23 .
- the conventional structure brazes and fixes coupled portions of a coolant passage.
- the present embodiment increases flexibility at coupled portions of a coolant passage.
- the inlet pipe 22 and the outlet pipe 23 are fixed to the main body 21 when resin-sealing the module components (i.e., the transistors Q 1 to Q 6 , the diodes D 1 to D 6 , the conductive plates 72 , 74 , 76 , and 78 , the connection pins 86 , and the wire W). This reduces processing steps and allows for a decrease in the accuracy required for formation of the brazed components.
- the O-ring 28 which functions as a seal, is arranged between each pipe (i.e., the inlet pipe 22 and the outlet pipe 23 ) and the main body 21 to increase the seal between the pipe and main body 21 .
- the O-ring 28 is used as the seal and thus provides superior sealing.
- the positioning part 91 and positioning part 29 for the O-ring 28 are formed on the pipes (i.e., the inlet pipe 22 and the outlet pipe 23 ) and the main body 21 at each portion where a pipe is coupled to the main body 21 . This facilitates positioning of the O-ring 28 .
- a structure coupling the main body 21 of the cooling device 20 and the pipe 22 ( 23 ) does not need an O-ring. Instead, a flange 95 arranged on the pipe 22 ( 23 ) may be held in contact with the top panel 21 a of the main body 21 , and the resin portion 40 may seal the surrounding of the flange 95 and the top panel 21 a.
- pipes 110 and 111 may be formed integrally with a resin portion 41 . More specifically, a first port 100 and a second port 101 are formed in the top panel 21 a of the main body 21 of the cooling device 20 . The pipes 110 and 111 are simultaneously formed when the resin portion 41 is molded. The first port 100 is in communication with the inlet pipe 110 , and the second port 101 is in communication with the outlet pipe 111 .
- the resin portion 41 may be molded on the outer surface of the main body 21 around the ports formed in the main body 21 (around the first port 100 and second port 101 ).
- the pipes i.e., the inlet pipe 110 in communication with the first port 100 and the outlet pipe 111 in communication with the second port 101 ) may be formed integrally with the resin portion 41 .
- the resin portion 41 is molded after brazing is performed.
- the pipes 110 and 111 are not susceptible to heat deformation because they are coupled to the main body 21 after the upper plate 24 , the lower plate 25 , and the undulated inner fins 26 are brazed together (refer to FIG. 6 ) and the insulating substrates 31 , 32 , 33 , and 34 are brazed to the main body 21 of the cooling device.
- the pipes 110 and 111 can be coupled to the main body 21 without being displaced. This structure also reduces the number of components.
- the inlet pipe 22 and the outlet pipe 23 are formed from resin, the pipes may be formed from other materials.
- the insulating substrates 31 , 32 , 33 , and 34 are DBA substrates
- the insulating substrates may be direct brazed copper (DBC) substrates, each including a ceramic substrate 35 sandwiched by copper layers.
- DBA direct brazed copper
- the ports i.e., the first port 90 a and the second port 90 b
- the ports may be formed in the lower plate 25 .
- the ports i.e., the first port 90 a and the second port 90 b
- the ports may be formed between the upper plate 24 and the lower plate 25 .
- the ports (the first port 100 and the second port 101 ) are formed in the upper plate 24 in FIG. 14 , the ports may be formed in the lower plate 25 . As shown in FIGS. 16 A and 16 B, the ports (i.e., the first port 100 and the second port 101 ) may be formed between the upper plate 24 and the lower plate 25 .
- the ports i.e., the first port 100 and the second port 101
- the first port 100 may be formed in the upper plate 24
- the second port 101 may be formed in the lower plate 25
- the first port 100 may be formed in the lower plate 25
- the second port 101 may be formed in the upper plate 24 .
- the inlet pipe 22 may be coupled to the main body 21 by performing resin molding, and the outlet pipe 23 may be brazed to the main body 21 .
- the outlet pipe 23 may be coupled to the main body 21 by performing resin molding, and the inlet pipe 22 may be brazed to the main body 21 .
- the present invention is applied to an inverter that functions as a power conversion device, the invention may be applied to other types of power conversion device, such as a converter.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
A cooling device includes a main body, a pipe, and a resin portion. The main body includes a first shell plate and a second shell plate each having a peripheral portion. The first shell plate and the second shell plate are integrated together by brazing the peripheral portions, and the main body includes a coolant passage and a port. The pipe is coupled to the main body and allows for circulation of coolant in the coolant passage through the port. The resin portion is molded on an outer surface of the main body at where the pipe is coupled to the main body to fix the pipe to the main body.
Description
- The present invention relates to a cooling device.
- Japanese Laid-Open Patent Publication No. 2008-211147 describes a coupling structure for coupling a pipe to a heat exchanger. The coupling structure includes two plates that are pressed and formed in conformance with each other. Each plate includes a peripheral portion and a shallow recess formed by the remaining portion of the plate. The peripheral portion includes a groove, which has a semicircular cross-section and connects the edge of the peripheral portion with the recess. The two plates are stacked so that their recesses face each other and their grooves face each other. A pipe is fitted to the grooves. In this state, the two plates are brazed and fixed to each other so that the plates are in contact with the pipe in a manner impervious to liquids. An annular first protrusion, which is formed along the outer circumference of the pipe, comes in contact with the edge of the entire groove.
- In the coupling structure, the pipe may be deformed by heat when brazed. This may result in displacement of the pipe. More specifically, the brazing is performed at, for example, 600° C., at which aluminum components may expand or contract. This may bend the main body of the cooling device and displace the pipe. Further, the heat may deform the pipe.
- It is an object of the present invention to provide a cooling device that allows for a pipe to be coupled to its main body without being displaced.
- To achieve the above object, one aspect of the present invention is a cooling device provided with a main body including a first shell plate and a second shell plate each having a peripheral portion. The first shell plate and the second shell plate are integrated together by brazing the peripheral portions, and the main body includes a coolant passage and a port. A pipe is coupled to the main body. The pipe allows for circulation of coolant in the coolant passage through the port. A resin portion is molded on an outer surface of the main body at where the pipe is coupled to the main body to fix the pipe to the main body.
- Other aspects and advantages of the present invention will become apparent from the following description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
-
FIG. 1A is a front view of an inverter module according to one embodiment of the present invention; -
FIG. 1B is a plan view of the inverter module shown inFIG. 1A ; -
FIG. 2A is a front view of the inverter module shown inFIG. 1A in a state in which a resin portion is eliminated; -
FIG. 2B is a plan view of the inverter module shown inFIG. 1A in a state in which the resin portion is eliminated; -
FIG. 3 is a cross-sectional view showing the inverter module ofFIG. 1A where a pipe is coupled; -
FIG. 4 is a circuit diagram of the inverter module shown inFIG. 1A ; -
FIG. 5A is a front view showing a main body and insulating substrates of the cooling device ofFIG. 1A ; -
FIG. 5B is a plan view showing the main body and insulating substrates of the cooling device ofFIG. 1A ; -
FIG. 6 is a cross-sectional view taken along VI-VI inFIG. 5B ; -
FIG. 7A is a front view illustrating a manufacturing process of the inverter module; -
FIG. 7B is a plan view showing the inverter module ofFIG. 7A ; -
FIG. 8A is a front view illustrating a manufacturing process of the inverter module; -
FIG. 8B is a plan view showing the inverter module ofFIG. 8A ; -
FIG. 9 is a cross-sectional view showing the inverter module ofFIG. 1A where a pipe is coupled and illustrating a manufacturing process of the inverter module; -
FIG. 10 is a front view showing the inverter module; -
FIG. 11 is a front view showing the inverter module; -
FIG. 12 is a front view showing the inverter module; -
FIG. 13 is a cross-sectional view showing a modification of an inverter module where a pipe is coupled; -
FIG. 14 is a partial cross-sectional view showing a modification of an inverter module; -
FIG. 15A is a partial cross-sectional view showing a modification of an inverter module; -
FIG. 15B is a partial side view showing the inverter module ofFIG. 15A ; -
FIG. 16A is a partial cross-sectional view showing a modification of an inverter module; and -
FIG. 16B is a partial side view showing the inverter module ofFIG. 16A . - A vehicle inverter according to one embodiment of the present invention will now be described with reference to the drawings.
- Referring to
FIGS. 1A and 1B , aninverter module 10 includes a cooling device. Theinverter module 10 is resin-molded and includes substrates on which semiconductor elements (chips) are mounted. As shown inFIGS. 1A to 2B , theinverter module 10 includes a water-coolingtype cooling device 20, four insulatingsubstrates resin portion 40. Theresin portion 40 may be formed from, for example, epoxy resin. -
FIG. 4 shows the circuit configuration of theinverter module 10. Theinverter module 10 includes aninverter 50, which converts DC power supplied from an external device, to AC power. Then, theinverter 50 supplies the AC power to atravel motor 60. This drives themotor 60, which produces rotation. - In detail, the
inverter 50 includes a plurality of arms, namely, a U-phase arm, a V-phase arm, and a W-phase arm arranged in parallel between a power supply line and a ground line. The arms include two series-connected transistors (IGBT) Q1 and Q2, Q3 and Q4, and Q5 and Q6, respectively. Diodes D1, D2, D3, D4, D5, and D6 are arranged between the collector and emitter of the transistors Q1, Q2, Q3, Q4, Q5, and Q6, respectively. Each diode allows for current to pass from the emitter to the collector of the corresponding transistor. - As shown in
FIGS. 1A to 2B , the insulatingsubstrates ceramic substrate 35, analuminum layer 36, which is formed on a first surface of theceramic substrate 35, and analuminum layer 37, which is formed on a second surface of theceramic substrate 35. Thealuminum layer 36 is patterned on the first surface of theceramic substrate 35. In the same manner, thealuminum layer 37 is patterned on the second surface of theceramic substrate 35. - The
cooling device 20 includes amain body 21, which is a tetragonal box having a low profile, aresin inlet pipe 22, and aresin outlet pipe 23. Themain body 21 of thecooling device 20 is formed from aluminum. As shown inFIG. 6 , themain body 21 includes anupper plate 24, which functions as a first shell plate, alower plate 25, which functions as a second shell plate, andinner fins 26, which are undulated. A peripheral portion of theupper plate 24 and a peripheral portion of thelower plate 25 are swaged together. In this state, the peripheral portions of theupper plate 24 and thelower plate 25 are brazed to each other. This brazes theupper plate 24 and thelower plate 25 at their peripheral portions in themain body 21. Theinner fins 26 are also brazed to and between theupper plate 24 andlower plate 25. - The
main body 21 includes a coolant passage P1 (refer toFIGS. 3 and 6 ). Theinlet pipe 22 is coupled to the upper surface of themain body 21 and allows for coolant to be supplied into themain body 21 through afirst port 90 a (refer toFIGS. 5A and 5B ), which is formed in themain body 21. In the same manner, theoutlet pipe 23 is coupled to the upper surface of themain body 21 and allows for coolant to be discharged from themain body 21 through asecond port 90 b (refer toFIGS. 5A and 5B ), which is formed in themain body 21. More specifically, a pump sends coolant into themain body 21 through theinlet pipe 22 and discharges the coolant from themain body 21 through theoutlet pipe 23. - As described above, the
pipes ports main body 21. - The insulating
substrates main body 21. In detail, the four insulatingsubstrates main body 21 of thecooling device 20. That is, thealuminum layer 36 under theceramic substrate 35 in each of the four insulatingsubstrates cooling device 20. - The
aluminum layer 37 on theceramic substrate 35 in the insulatingsubstrate 31 is a wiring material. The transistor (chip) Q1 and the diode (chip) D1 are soldered and joined with the upper surface of thealuminum layer 37. Thealuminum layer 37 on theceramic substrate 35 in the insulatingsubstrate 32 is a wiring material. The transistor (chip) Q3 and the diode (chip) D3 are soldered and joined with the upper surface of thealuminum layer 37. Thealuminum layer 37 on theceramic substrate 35 in the insulatingsubstrate 33 is a wiring material. The transistor (chip) Q5 and the diode (chip) D5 are soldered and joined with the upper surface of thealuminum layer 37. Thealuminum layer 37 on theceramic substrate 35 in the insulatingsubstrate 34 is a wiring material. The transistors (chips) Q2, Q4, and Q6 and the diodes (chips) D2, D4, and D6 are soldered and joined with the upper surface of thealuminum layer 37. - The collector terminals on the upper surfaces of the transistors Q1, Q3, and Q5 and the cathode terminals on the upper surfaces of the diodes D1, D3, and D5 are joined with a
conductive plate 70, which functions as an external connection terminal, bysolder 71. The collector terminal on the upper surface of the transistor Q2, the cathode terminal on the upper surface of the diode D2, and thealuminum layer 37 in the insulating substrate 31 (the emitter of the transistor Q1 and the anode of the diode D1) are joined with aconductive plate 72, which functions as an external connection terminal, bysolder 73. Further, the collector terminal on the upper surface of the transistor Q4, the cathode terminal on the upper surface of the diode D4, and thealuminum layer 37 in the insulating substrate 32 (i.e., the emitter of the transistor Q3 and the anode of the diode D3) are joined with aconductive plate 74, which functions as an external connection terminal, bysolder 75. The collector terminal on the upper surface of the transistor Q6, the cathode terminal on the upper surface of the diode D6, and thealuminum layer 37 in the insulating substrate 33 (i.e., the emitter of the transistor Q5 and the anode of the diode D5) are joined with aconductive plate 76, which functions as an external connection terminal, bysolder 77. Aconductive plate 78, which functions as an external connection terminal, is soldered to thealuminum layer 37 on theceramic substrate 35 in the insulatingsubstrate 34. Theconductive plates conductive plates conductive plates - The second end of the
conductive plate 70 is bent upward. In the same manner, the second end of theconductive plate 72 is bent upward. The second end of theconductive plate 74 is bent upward. The second end of theconductive plate 76 is bent upward. The second end of theconductive plate 78 is bent upward. - Six connection pin seats 80, 81, 82, 83, 84, and 85 are fixed to the upper surface of the
main body 21 of thecooling device 20. Three connection pins 86, which function as external connection terminals, are fixed to each of the connection pin seats 80, 81, 82, 83, 84, and 85. The connection pins 86 are formed from copper. One of the threeconnection pins 86 forms a gate voltage application line, and the two remaining connection pins 86 forming an emitter voltage detection line and an emitter temperature detection line. The threeconnection pins 86 include first terminals electrically connected by wires W formed by a wiring material, or wire-bonded, to the transistors (chips) Q1, Q2, Q3, Q4, Q5, and Q6. - The three
connection pins 86 include the first terminals, which are electrically connected to the corresponding transistors Q1, Q2, Q3, Q4, Q5, and Q6, and second terminals, which are bent upward. - The
resin portion 40 covers the components arranged on the upper surface of themain body 21 of the cooling device 20 (i.e., the insulatingsubstrates conductive plates conductive plates upright portions resin portion 40. In the same manner, the threeconnection pins 86, which are connected to each of the transistors Q1, Q2, Q3, Q4, Q5, and Q6, includeupright portions 86 a with upper ends exposed from theresin portion 40. - The portion where the
inlet pipe 22 is coupled to themain body 21 of thecooling device 20 and the portion where theoutlet pipe 23 is coupled to themain body 21 are formed as shown inFIG. 3 . - As shown in
FIG. 3 , themain body 21 has atop panel 21 a, which includes thefirst port 90 a and thesecond port 90 b, and apositioning part 91, which projects upward and entirely around each of thefirst port 90 a andsecond port 90 b. Theinlet pipe 22 and theoutlet pipe 23 each have a thick lower end, which includes arecess 27 open downward and extending along the entire circumference of the pipe. Themain body 21 closes the opening of therecess 27. Thepositioning part 91 is arranged in therecess 27. An O-ring 28 is set in therecess 27. - The
resin portion 40 fixes themain body 21 of thecooling device 20 with theinlet pipe 22 and theoutlet pipe 23. The O-ring 28 is in close contact with thetop panel 21 a of themain body 21 and also with the bottom surface of therecess 27. As a result, themain body 21 and theinlet pipe 22 are in contact with each other in a manner impervious to liquid, and themain body 21 and theoutlet pipe 23 are also in contact with each other in a manner impervious to liquid. - Also, the
positioning part 91, which positions the O-ring 28 relative to themain body 21, is formed on themain body 21 where theinlet pipe 22 is coupled to themain body 21 and where theoutlet pipe 23 is coupled to themain body 21. Further, apositioning part 29, which positions the O-ring 28 relative to themain body 21, is formed on theinlet pipe 22 and theoutlet pipe 23 where theinlet pipe 22 is coupled to themain body 21 and where theoutlet pipe 23 is coupled to themain body 21. Thepositioning part 91 positions the O-ring 28 from a radially inner side, and thepositioning part 29 positions the O-ring 28 from a radially outer side. - The operation of the
inverter module 10 will now be described. - Coolant is supplied to the
inlet pipe 22 of thecooling device 20. The coolant enters themain body 21 of thecooling device 20 through theinlet pipe 22. The coolant flows through themain body 21 of thecooling device 20 toward theoutlet pipe 23. Then, the coolant enters theoutlet pipe 23 to be discharged from theoutlet pipe 23. The six transistors Q1, Q2, Q3, Q4, Q5, and Q6 of theinverter module 10 each generate heat when undergoing a switching operation. The six diodes D1, D2, D3, D4, D5, and D6 generate heat when activated. The heat generated by the transistors Q1, Q2, Q3, Q4, Q5, and Q6 is transferred to themain body 21 of thecooling device 20 through the insulating substrates (DBA substrates) 31, 32, 33, and 34, which transfer heat to the coolant flowing through themain body 21 of thecooling device 20. In the same manner, the heat generated by the six diodes D1, D2, D3, D4, D5, and D6 is transferred to themain body 21 of thecooling device 20 through the insulating substrates (DBA substrates) 31, 32, 33, and 34, which transfer heat to the coolant flowing through themain body 21 of thecooling device 20. - A method for manufacturing the
inverter module 10 will now be described with reference toFIGS. 1A to 3 andFIGS. 5A to 9 . - Referring to
FIGS. 5A to 6 , the insulating substrates (DBA substrates) 31, 32, 33, and 34 are prepared. Thealuminum layer 36 is patterned on one surface of theceramic substrate 35, and thealuminum layer 37 is patterned on the other surface of theceramic substrate 35. The peripheral portions of theupper plate 24 andlower plate 25, which form themain body 21 of thecooling device 20, are swaged and brazed together. Further, the undulatedinner fins 26 are also brazed between theupper plate 24 and thelower plate 25. At the same time, the insulating substrates (DBA substrates) 31, 32, 33, and 34 are brazed to the upper surface of themain body 21 of thecooling device 20. In detail, thealuminum layer 36 under theceramic substrate 35 in each of the four insulatingsubstrates cooling device 20. The brazing is performed at about 600° C. This integrates themain body 21 of the cooling device with the insulatingsubstrates - Subsequently, referring to
FIGS. 7A and 7B , each of the transistors Q1, Q2, Q3, Q4, Q5, and Q6 and each of the diodes D1, D2, D3, D4, D5, and D6 are soldered to the upper surface of thealuminum layer 37 on theceramic substrate 35 in the corresponding one of the insulatingsubstrates - At the same time, the
conductive plates main body 21 of thecooling device 20. - Referring to
FIGS. 8A and 8B , the connection pins 86 are joined with the corresponding transistors (chips) Q1, Q2, Q3, Q4, Q5, and Q6 by the wire W. Subsequently, theinlet pipe 22 and theoutlet pipe 23 are mounted on themain body 21 of thecooling device 20. In detail, referring toFIG. 9 , the O-ring 28 is held between themain body 21 and the lower end of each of theinlet pipe 22 andoutlet pipe 23. In this state, theinlet pipe 22 and theoutlet pipe 23 are arranged upright on themain body 21 of thecooling device 20. - As shown in
FIGS. 1A to 2B , theresin portion 40 is used to seal and integrate the components mounted on themain body 21 of thecooling device 20. The components mounted on themain body 21 of thecooling device 20 include the portion where themain body 21 and theinlet pipe 22 are coupled, the portion where themain body 21 and theoutlet pipe 23 are coupled, the insulatingsubstrates conductive plates resin portion 40 is molded at about 120° C. This fixes theinlet pipe 22 and theoutlet pipe 23 to themain body 21 with theresin portion 40. Thus, theinlet pipe 22 and theoutlet pipe 23 can be fixed to themain body 21 with theresin portion 40 at the same time as when sealing the semiconductor elements (the transistors Q1, Q2, Q3, Q4, Q5, and Q6 and the diodes D1, D2, D3, D4, D5, and D6), which are soldered, with theresin portion 40. - In this manner, after brazing the
upper plate 24, thelower plate 25, theinner fins 26, and the insulating substrates (DBA substrates) 31, 32, 33, and 34, which form themain body 21 of thecooling device 20, thepipes main body 21 when themain body 21 is resin-sealed. The resin-sealing is performed at the same time as when sealing the circuit components of the module (the transistors Q1 to Q6, the diodes D1 to D6, theconductive plates pipes main body 21 of thecooling device 20, thepipes main body 21 of thecooling device 20 as a common part. - More specifically, as shown in
FIG. 10 ,straight pipes 22 a and 23 a may be coupled to themain body 21 of thecooling device 20 and extended upright from the upper surface of themain body 21. Alternatively, as shown inFIG. 11 , L-shapedpipes main body 21 so that thepipes main body 21 of thecooling device 20. - As shown in
FIG. 12 ,pipes main body 21 so that thepipes main body 21 of thecooling device 20. More specifically, the upper longitudinal surface of themain body 21 is horizontal, and thepipes main body 21. - The above embodiment has the advantages described below.
- (1) The
cooling device 20 includes themain body 21 and pipes (i.e., theinlet pipe 22 and the outlet pipe 23). Theinlet pipe 22 is coupled to themain body 21 and supplies the coolant through thefirst port 90 a, which is formed in themain body 21. Theoutlet pipe 23 is coupled to themain body 21 and discharges coolant through thesecond port 90 b, which is formed in themain body 21. Theresin portion 40 is molded onto a coupling portion, that is, the outer surface of themain body 21 where the pipes (i.e., theinlet pipe 22 and the outlet pipe 23) are coupled to themain body 21. - The conventional structure is susceptible to heat deformation that may occur in a brazing process. In contrast, the present embodiment molds the
resin portion 40 subsequent to brazing. This prevents displacement of theinlet pipe 22 and theoutlet pipe 23 that would be caused the heat generated during the brazing. In detail, the brazing is performed at about 600° C., whereas the resin molding is performed at about 120° C. Thus, in comparison with the convention structure, the structure of the present embodiment is less susceptible to heat deformation that would occur during the brazing. - In this manner, displacement of the
pipes main body 21 of thecooling device 20 caused by heat is prevented. As a result, thecooling device 20 can coupled thepipes main body 21 while suppressing displacement of thepipes - The conventional structure brazes and fixes coupled portions of a coolant passage. In contrast, the present embodiment increases flexibility at coupled portions of a coolant passage. Further, the
inlet pipe 22 and theoutlet pipe 23 are fixed to themain body 21 when resin-sealing the module components (i.e., the transistors Q1 to Q6, the diodes D1 to D6, theconductive plates - (2) The O-
ring 28, which functions as a seal, is arranged between each pipe (i.e., theinlet pipe 22 and the outlet pipe 23) and themain body 21 to increase the seal between the pipe andmain body 21. In particular, the O-ring 28 is used as the seal and thus provides superior sealing. - (3) The
positioning part 91 and positioningpart 29 for the O-ring 28 are formed on the pipes (i.e., theinlet pipe 22 and the outlet pipe 23) and themain body 21 at each portion where a pipe is coupled to themain body 21. This facilitates positioning of the O-ring 28. - It should be apparent to those skilled in the art that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention. Particularly, it should be understood that the present invention may be embodied in the following forms.
- Referring to
FIG. 13 , a structure coupling themain body 21 of thecooling device 20 and the pipe 22 (23) does not need an O-ring. Instead, aflange 95 arranged on the pipe 22 (23) may be held in contact with thetop panel 21 a of themain body 21, and theresin portion 40 may seal the surrounding of theflange 95 and thetop panel 21 a. - As shown in
FIG. 14 ,pipes resin portion 41. More specifically, afirst port 100 and asecond port 101 are formed in thetop panel 21 a of themain body 21 of thecooling device 20. Thepipes resin portion 41 is molded. Thefirst port 100 is in communication with theinlet pipe 110, and thesecond port 101 is in communication with theoutlet pipe 111. - In this manner, the
resin portion 41 may be molded on the outer surface of themain body 21 around the ports formed in the main body 21 (around thefirst port 100 and second port 101). At the same time, the pipes (i.e., theinlet pipe 110 in communication with thefirst port 100 and theoutlet pipe 111 in communication with the second port 101) may be formed integrally with theresin portion 41. - In this case, the
resin portion 41 is molded after brazing is performed. This prevents theinlet pipe 110 and the outlet pipe 111 (i.e., coolant inlet and outlet) from being deformed by the heat generated in the brazing process. This prevents deformation of the pipes. In detail, thepipes main body 21 after theupper plate 24, thelower plate 25, and the undulatedinner fins 26 are brazed together (refer toFIG. 6 ) and the insulatingsubstrates main body 21 of the cooling device. This prevents displacement of thepipes main body 21 of thecooling device 20 that would be caused by heat. As a result, thepipes main body 21 without being displaced. This structure also reduces the number of components. - Although the
inlet pipe 22 and theoutlet pipe 23 are formed from resin, the pipes may be formed from other materials. - Although the insulating
substrates ceramic substrate 35 sandwiched by copper layers. - Although the ports (i.e., the
first port 90 a and thesecond port 90 b) are formed in theupper plate 24 inFIG. 3 , the ports may be formed in thelower plate 25. Further, as shown inFIGS. 15A and 15B , the ports (i.e., thefirst port 90 a and thesecond port 90 b) may be formed between theupper plate 24 and thelower plate 25. - Although the ports (the
first port 100 and the second port 101) are formed in theupper plate 24 inFIG. 14 , the ports may be formed in thelower plate 25. As shown in FIGS. 16A and 16B, the ports (i.e., thefirst port 100 and the second port 101) may be formed between theupper plate 24 and thelower plate 25. - Although the ports (i.e., the
first port 100 and the second port 101) are formed in theupper plate 24 inFIG. 14 , thefirst port 100 may be formed in theupper plate 24, and thesecond port 101 may be formed in thelower plate 25. Alternatively, thefirst port 100 may be formed in thelower plate 25, and thesecond port 101 may be formed in theupper plate 24. - It is only required that resin be molded over at least one of where the
inlet pipe 22 is coupled to themain body 21 and where theoutlet pipe 23 is coupled and themain body 21 to fix the pipe to themain body 21. More specifically, for example, theinlet pipe 22 may be coupled to themain body 21 by performing resin molding, and theoutlet pipe 23 may be brazed to themain body 21. Alternatively, theoutlet pipe 23 may be coupled to themain body 21 by performing resin molding, and theinlet pipe 22 may be brazed to themain body 21. - Although the present invention is applied to an inverter that functions as a power conversion device, the invention may be applied to other types of power conversion device, such as a converter.
- The present examples and embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalence of the appended claims.
Claims (6)
1. A cooling device comprising:
a main body including a first shell plate and a second shell plate, each having a peripheral portion, wherein the first shell plate and the second shell plate are integrated together by brazing the peripheral portions, and the main body includes a coolant passage and a port;
a pipe coupled to the main body, wherein the pipe allows for circulation of coolant in the coolant passage through the port; and
a resin portion molded on an outer surface of the main body at where the pipe is coupled to the main body to fix the pipe to the main body.
2. The cooling device according to claim 1 , wherein the port is formed in at least one of the first shell plate and the second shell plate.
3. The cooling device according to claim 1 , wherein the port is formed between the first shell plate and the second shell plate.
4. The cooling device according to claim 1 , further comprising a seal arranged between the pipe and the main body.
5. The cooling device according to claim 4 , wherein the main body and the pipe each include a positioning part where the pipe is coupled to the main body, and the positioning part positions the seal.
6. The cooling device according to claim 1 , wherein the pipe is formed integrally with the main body.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-045892 | 2012-03-01 | ||
JP2012045892A JP5821702B2 (en) | 2012-03-01 | 2012-03-01 | Cooler |
Publications (1)
Publication Number | Publication Date |
---|---|
US20130228319A1 true US20130228319A1 (en) | 2013-09-05 |
Family
ID=47826919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/775,557 Abandoned US20130228319A1 (en) | 2012-03-01 | 2013-02-25 | Cooling device |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130228319A1 (en) |
EP (1) | EP2634800A2 (en) |
JP (1) | JP5821702B2 (en) |
KR (1) | KR101482379B1 (en) |
CN (1) | CN103295984A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018092608A1 (en) * | 2016-11-21 | 2018-05-24 | 株式会社デンソー | Laminated heat exchanger |
JP6658710B2 (en) * | 2016-11-21 | 2020-03-04 | 株式会社デンソー | Stacked heat exchanger |
WO2024084972A1 (en) * | 2022-10-21 | 2024-04-25 | 株式会社ティラド | Surface contact heat exchanger |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3305012A (en) * | 1965-04-19 | 1967-02-21 | Henry W Allen | Heat exchanger bundle |
US5262704A (en) * | 1991-03-05 | 1993-11-16 | Tecumseh Products Company | Protection circuit in inverter for refrigerators |
US5348082A (en) * | 1992-04-24 | 1994-09-20 | Valeo Thermique Moteur | Heat exchanger with tubes of oblong cross section, in particular for motor vehicles |
US5978220A (en) * | 1996-10-23 | 1999-11-02 | Asea Brown Boveri Ag | Liquid cooling device for a high-power semiconductor module |
US6367543B1 (en) * | 2000-12-11 | 2002-04-09 | Thermal Corp. | Liquid-cooled heat sink with thermal jacket |
US20070039716A1 (en) * | 2005-08-17 | 2007-02-22 | Man Zai Industrial Co., Ltd. | Heat dissipating unit |
US20070246191A1 (en) * | 2006-04-20 | 2007-10-25 | The Boeing Company | Hybrid ceramic core cold plate |
US7658224B2 (en) * | 2005-09-19 | 2010-02-09 | Dana Canada Corporation | Flanged connection for heat exchanger |
US20100328893A1 (en) * | 2009-06-29 | 2010-12-30 | Honda Motor Co., Ltd. | Cooling device for semiconductor element module and magnetic part |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02146844U (en) * | 1989-05-08 | 1990-12-13 | ||
JP4713025B2 (en) * | 2001-07-31 | 2011-06-29 | 株式会社ティラド | Connection structure between resin pipe and tank |
CN2641833Y (en) * | 2003-06-13 | 2004-09-15 | 宝陆科技有限公司 | Liquid cooling device |
JP4015975B2 (en) * | 2003-08-27 | 2007-11-28 | 三菱電機株式会社 | Semiconductor device |
JP4478618B2 (en) * | 2005-06-28 | 2010-06-09 | 本田技研工業株式会社 | Power semiconductor module |
JP4699820B2 (en) * | 2005-06-28 | 2011-06-15 | 本田技研工業株式会社 | Power semiconductor module |
JP2007019401A (en) * | 2005-07-11 | 2007-01-25 | Daikin Ind Ltd | Resin-sealed substrate and manufacturing method thereof |
JP5094045B2 (en) * | 2005-11-09 | 2012-12-12 | 大成プラス株式会社 | Electronic circuit device having cooling function and manufacturing method thereof |
JP4965242B2 (en) * | 2006-12-27 | 2012-07-04 | 株式会社ティラド | Manufacturing method of aluminum heat sink |
JP4996284B2 (en) * | 2007-02-28 | 2012-08-08 | 株式会社ティラド | Pipe structure for heat exchanger |
JP5267238B2 (en) * | 2009-03-13 | 2013-08-21 | トヨタ自動車株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP5439933B2 (en) * | 2009-04-28 | 2014-03-12 | 株式会社豊田自動織機 | Cooling system |
JP2011192746A (en) * | 2010-03-12 | 2011-09-29 | Toyota Motor Corp | Cooling tube and method of manufacturing the same |
JP5642022B2 (en) * | 2011-06-17 | 2014-12-17 | カルソニックカンセイ株式会社 | Semiconductor device and manufacturing method of semiconductor device |
WO2013140503A1 (en) * | 2012-03-19 | 2013-09-26 | 三菱電機株式会社 | Semiconductor device and semiconductor system |
-
2012
- 2012-03-01 JP JP2012045892A patent/JP5821702B2/en not_active Expired - Fee Related
-
2013
- 2013-02-25 EP EP13156560.8A patent/EP2634800A2/en not_active Withdrawn
- 2013-02-25 US US13/775,557 patent/US20130228319A1/en not_active Abandoned
- 2013-02-27 KR KR20130021575A patent/KR101482379B1/en not_active IP Right Cessation
- 2013-02-27 CN CN2013100619445A patent/CN103295984A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3305012A (en) * | 1965-04-19 | 1967-02-21 | Henry W Allen | Heat exchanger bundle |
US5262704A (en) * | 1991-03-05 | 1993-11-16 | Tecumseh Products Company | Protection circuit in inverter for refrigerators |
US5348082A (en) * | 1992-04-24 | 1994-09-20 | Valeo Thermique Moteur | Heat exchanger with tubes of oblong cross section, in particular for motor vehicles |
US5978220A (en) * | 1996-10-23 | 1999-11-02 | Asea Brown Boveri Ag | Liquid cooling device for a high-power semiconductor module |
US6367543B1 (en) * | 2000-12-11 | 2002-04-09 | Thermal Corp. | Liquid-cooled heat sink with thermal jacket |
US20070039716A1 (en) * | 2005-08-17 | 2007-02-22 | Man Zai Industrial Co., Ltd. | Heat dissipating unit |
US7658224B2 (en) * | 2005-09-19 | 2010-02-09 | Dana Canada Corporation | Flanged connection for heat exchanger |
US20070246191A1 (en) * | 2006-04-20 | 2007-10-25 | The Boeing Company | Hybrid ceramic core cold plate |
US20100328893A1 (en) * | 2009-06-29 | 2010-12-30 | Honda Motor Co., Ltd. | Cooling device for semiconductor element module and magnetic part |
Also Published As
Publication number | Publication date |
---|---|
EP2634800A2 (en) | 2013-09-04 |
KR101482379B1 (en) | 2015-01-13 |
KR20130100725A (en) | 2013-09-11 |
JP5821702B2 (en) | 2015-11-24 |
JP2013183021A (en) | 2013-09-12 |
CN103295984A (en) | 2013-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6765469B2 (en) | Power module semiconductor device | |
JP5273101B2 (en) | Semiconductor module and manufacturing method thereof | |
TWI762535B (en) | semiconductor device | |
US9837338B2 (en) | Semiconductor module with mounting case and method for manufacturing the same | |
EP3343603B1 (en) | Structure | |
US20100065950A1 (en) | Leaded semiconductor power module with direct bonding and double sided cooling | |
JP5642022B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
EP4293714A2 (en) | Power semiconductor device module | |
US9088226B2 (en) | Power module for converting DC to AC | |
WO2016150391A1 (en) | Smart power module and manufacturing method therefor | |
US11682611B2 (en) | Power semiconductor module | |
US8890311B2 (en) | Power conversion device | |
WO2020105463A1 (en) | Semiconductor module, power conversion device, and method for manufacturing semiconductor module | |
CN111373647A (en) | Power conversion device | |
US20150137344A1 (en) | Semiconductor device and method for manufacturing same | |
US20130228319A1 (en) | Cooling device | |
US9287192B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
JP7204919B2 (en) | Power module and manufacturing method thereof | |
TWI764256B (en) | Intelligent power module packaging structure | |
CN114050134B (en) | Semiconductor circuit with a high-voltage power supply |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NISHI, SHINSUKE;MORI, SHOGO;SIGNING DATES FROM 20130208 TO 20130212;REEL/FRAME:029867/0751 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |