US20120139649A1 - Field tunable spin torque oscillator for rf signal generation - Google Patents
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- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 title claims description 29
- 230000005291 magnetic effect Effects 0.000 claims abstract description 146
- 230000010355 oscillation Effects 0.000 claims abstract description 96
- 230000005415 magnetization Effects 0.000 claims abstract description 51
- 125000006850 spacer group Chemical group 0.000 claims abstract description 22
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 18
- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 8
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000012546 transfer Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 257
- 230000008859 change Effects 0.000 description 11
- 230000005294 ferromagnetic effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000005350 ferromagnetic resonance Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910003321 CoFe Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000037361 pathway Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 235000019256 formaldehyde Nutrition 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000006399 behavior Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000005418 spin wave Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- -1 AlOx Chemical class 0.000 description 1
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000010361 irregular oscillation Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
Definitions
- the invention relates to a perpendicular spin transfer oscillator (PSTO) used for thin film applications such as a RF field generator in spintronic device, and in particular to a PSTO structure having a three electrical terminal structure wherein a high density current is flowed through a GMR junction to induce a magnetic oscillation layer into an oscillation state; and a low density RF signal generation current is flowed though an adjacent TMR junction for sensing an oscillation frequency.
- PSTO perpendicular spin transfer oscillator
- Spin transfer (spin torque) devices are based on a spin-transfer effect that arises from the spin dependent electron transport properties of ferromagnetic-spacer-ferromagnetic multilayers.
- spin-polarized current transverses a magnetic multilayer in a CPP (current perpendicular to plane) configuration
- the spin angular moment of electrons incident on a ferromagnetic layer interacts with magnetic moments of the ferromagnetic layer near the interface between the ferromagnetic and non-magnetic spacer. Through this interaction, the electrons transfer a portion of their angular momentum to the ferromagnetic layer.
- spin-polarized current can switch the magnetization direction of the ferromagnetic layer if the current density is sufficiently high, and if the dimensions of the multilayer are small.
- Spin transfer devices also known as spintronic devices wherein at least one of the ferromagnetic layers in a magnetoresistive (MR) junction has perpendicular magnetic anisotropy have an advantage over devices based solely on in-plane anisotropy in that they can satisfy the thermal stability requirement but also have no limit of cell aspect ratio.
- spin valve structures based on PMA are capable of scaling for higher packing density which is a key challenge for future MRAM (Magnetoresistive Random Access Memory) applications and other spintronic devices such as microwave generators.
- MRAM Magneticoresistive Random Access Memory
- a spin transfer oscillator is a magneto-resistive (MR) thin film device which can have an induced RF frequency magnetization oscillation within at least one of its magnetic layers by applying an electrical current.
- an STO may be used as a high Q factor RF signal generator if the oscillating magnetization is transformed into resistance fluctuations through a MR effect.
- An STO comprises at least three layers including a magnetic oscillating layer (MOL), a magnetic reference layer (MRL), and a non-magnetic spacer sandwiched between the MOL and MRL. These three layers may be considered a junction.
- a PSTO perpendicular spin torque oscillator
- PMA perpendicular magnetic anisotropy
- a PSTO structure is depicted from U.S. Pat. No. 7,616,412 and includes MRL 1 that has intrinsic anisotropy which keeps its magnetization perpendicular to the film plane, non-magnetic junction layer 2 , and MOL which is a composite comprised of layers 31 - 33 .
- Layers 31 , 33 are soft magnetic layers and middle layer 32 has a perpendicular anisotropy 34 normal to the film plane that biases layers 31 , 33 through exchange coupling.
- Layers 1 , 2 , and 31 - 33 constitute the PSTO component 11 of the stack.
- second junction layer 4 reference layer 5 with in-plane magnetization, non-magnetic exchange layer 6 typically made of Ru, and pinned layer 7 are sequentially formed as a second stack 12 on PSTO stack 11 .
- Layers 5 - 7 comprise a generic synthetic anti-ferromagnetic (SAF) configuration commonly used in commercial giant magnetoresistive (GMR) or tunneling magnetoresistive (TMR) sensors.
- Anti-ferromagnetic layer 8 pins reference layer 5 and pinned layer 7 through exchange coupling.
- PSTO 11 is intrinsically a MR junction in which relative magnetization angle change between layers 1 and 31 - 33 will produce a resistance change across stack 11 that can be measured as a voltage signal when a current flows through the stack.
- the relative angle between the magnetizations of MRL 1 and MOL 31 - 33 does not really change which makes it difficult to generate an electrical signal through the resistance change of the MR junction to reflect the MOL oscillation.
- the prior art utilizes SAF and AFM layers above MOL 31 - 33 where reference layer 5 serves to generate a MR resistance change during MOL magnetization oscillation. Therefore, layers 33 , 4 , and 5 form another MR junction wherein the relative magnetization angle change between MOL layer 33 and reference layer 5 produces an effective resistance. As current flows between contacts 9 and 10 , a voltage signal reflecting MOL layer magnetization oscillation can be produced across the entire stack.
- MOL layer 33 is used both as part of the oscillation layer in the lower MR junction and as a signal layer for the top MR junction, there is a continuous current across the two junctions.
- layer 2 is preferably metal to result in a lower junction based on a GMR (giant magnetoresistive) effect in which resistivity is generally quite low and current density is relatively high in order to induce MOL oscillation.
- the top junction involving layer 4 is preferably a TMR (tunneling magnetoresistive) element having a resistivity that is substantially larger than that of the lower GMR junction.
- FIGS. 2 a - 2 b and FIGS. 3 a - 3 b micro-magnetic simulations are shown for a PSTO comprised of stack 11 only ( FIGS. 2 a , 3 a ) and for a PSTO that includes all layers 1 - 8 in FIG. 1 as depicted in FIGS. 2 b , 3 b .
- FIG. 2 a is the oscillation time trace of the in-plane magnetization component for MOL in stack 11 only
- FIG. 2 b is a similar oscillation time trace for a PSTO having all layers in FIG. 1 .
- FIG. 3 a and FIG. 3 b are the corresponding power-spectrum-density (PSD) plots of the time traces in FIGS.
- PSD power-spectrum-density
- the change to irregular oscillations and lower power is especially not desirable when uniform and high power MOL oscillation is required on a continuous basis for optimum performance while characterization of oscillation frequency is only needed occasionally, for example, when the PSTO is used as a RF field generator in a magnetic recording device.
- FIG. 1 structure Another disadvantage of the FIG. 1 structure is that the PMA layer 32 is separated from the lower junction layer 2 by a soft magnetic layer 31 . This configuration is found not to be effective for generating STO induced oscillation in MOL 31 - 33 in actual fabricated devices as will be explained later with regard to FIG. 5 b.
- U.S. Patent App. Publication 2009/0201614 discloses a hybrid spin torque oscillator having a separate oscillating field generating unit that supplies an oscillating field through magnetostatic coupling to a magnetoresistive (MR) element.
- MR magnetoresistive
- An AC component is formed by device resistance variation as a function of time and is extracted by a bias tee formed with a capacitor and an inductor to obtain a microwave output.
- U.S. Pat. No. 7,589,600 describes the use of an electromagnet to provide an in-plane field that induces an oscillation in a STO structure.
- U.S. Patent Application 2010/0110592 discloses a STO having a non-magnetic layer disposed between a first magnetic layer and a second magnetic layer. A magnetic field is applied in a direction substantially perpendicular to the principal plane and a current is passed perpendicular to the principal plane.
- U.S. Pat. No. 7,652,915 describes spin torque microwave oscillation wherein the oscillation frequency is a function of the memory element size, shape, and anisotropy.
- the memory element is read by measuring resistance either with a DC current or by measuring the resonant frequency.
- an electromagnetic field generating element comprising a spin wave excitation layer adjacent to a first magnetic pole and having its magnetization direction varied in response to external magnetic fields.
- a spin wave excitation current flows perpendicular to the layer planes from the first magnetic pole to a second magnetic pole.
- One objective of the present invention is to provide a PSTO RF signal generator structure in which at least one layer in the STO component is capable of being excited into a magnetization oscillation state.
- a second objective of the present invention is to provide a PSTO structure wherein an applied magnetic field is used in combination with a high density current to induce a STO layer into an oscillation state and the resulting oscillation frequency may be tuned by varying the field after oscillation is initiated.
- Another objective of the present invention is to provide a three electrical terminal structure to isolate a high density STO current through a GMR junction from a low density RF signal generation current in an adjacent TMR junction.
- a PSTO component comprised of a MRUfirst spacer/MOL stack in a GMR configuration is electrically isolated from a RF signal generation stack having a sensing layer/second spacer/reference layer/AFM configuration in a magnetoresistive (MR) sensor wherein the second spacer is a tunnel junction layer.
- the upper MOL layer in the STO stack and the lower sensing layer in the MR sensor stack are separated by a non-magnetic conductive layer but are magnetostatically coupled.
- a first terminal is connected to the non-magnetic conductive layer, a second terminal is connected to the MRL, and a third terminal is connected to the upper layer in the MR sensor.
- the MRL in the STO stack has perpendicular magnetic anisotropy (PMA), and the first spacer is preferably a conductive metal such as Cu.
- the MOL is a composite with a lower PMA magnetic layer adjoining a top surface of the first spacer, and an upper soft magnetic layer abutting a bottom surface of the non-magnetic conductive layer wherein the lower PMA layer and upper soft magnetic layer are exchange coupled.
- the MR sensor with a TMR junction may be comprised of a stack in which a magnetic sensing layer, tunnel junction layer, reference layer, exchange layer, pinned layer, and an anti-ferromagnetic (AFM) layer are sequentially formed on a top surface of the non-magnetic conductive layer.
- AFM anti-ferromagnetic
- the soft magnetic layer in the STO and the magnetic sensing layer in the TMR element experience magnetostatic coupling when their magnetizations have an in-plane component.
- a magnetic field is applied in a direction perpendicular to the planes of the STO and TMR junction layers.
- a high density current flows from the second terminal to the first terminal, a certain portion of electrons are reflected from the MRUfirst spacer interface back into the MOL layer to induce a magnetization oscillation with a significant in-plane magnetization component.
- the lower PMA layer oscillates together with the upper soft magnetic layer but at a smaller amplitude.
- the sensing layer in the TMR stack also oscillates under the magnetostatic coupling influence of the soft magnetic layer and thereby produces a varying voltage across the TMR element.
- MOL and the TMR sensing layer preferably have substantially the same thickness, size, and magnetic moment (Mst value) such that under the same applied field, the intrinsic oscillation frequencies of the two layers are substantially the same.
- a low density current is flowed between the second and third terminals in either direction to generate an AC voltage signal to determine RF frequency in the sensing layer.
- the features of the first embodiment are retained except the MOL in the STO stack is a single layer that may be a soft magnetic layer or a magnetic layer having a certain PMA.
- the TMR sensing layer has a magnetic property, physical size, and thickness substantially the same as that of the MOL in order to promote efficient magnetostatic coupling between the two layers and induce a magnetization oscillation in the TMR sensing layer when the MOL is excited into an oscillation state.
- FIG. 1 is a cross-sectional view of a prior art PSTO structure in which magnetization oscillation frequency is sensed by means of an additional stack of layers formed above the PSTO stack.
- FIG. 2 a is a plot showing an oscillation time trace of the in-plane magnetization component of the MOL layer for stack 11 ( FIG. 1 ) only
- FIG. 2 b is a similar oscillation time trace for all layers in FIG. 1 between upper and lower contacts.
- FIG. 3 a is the corresponding power-spectrum-density (PSD) of the time traces in FIG. 2 a
- FIG. 3 b is the corresponding PSD of the time traces in FIG. 2 b where the FMR peak represents the frequency and power of the oscillation.
- PSD power-spectrum-density
- FIG. 4 is a cross-sectional view of a PSTO with a three terminal structure in which a STO current flows through a lower GMR stack and a RF signal generation current flows through an upper TMR element according to one embodiment of the present invention.
- FIG. 5 a is a plot showing experiment results for STO resistance vs. field at low and high current densities for a field tunable STO structure according to an embodiment of the present invention.
- FIG. 5 b is a plot showing experiment results for STO resistance vs. field at low and high current densities for a PSTO structure formed according to a prior art reference.
- FIG. 6 is a cross-sectional view of a PSTO with a three terminal structure in which a STO current flows through a lower GMR stack and a RF signal generation current flows through an upper TMR element according to a second embodiment of the present invention.
- FIG. 7 is a cross-sectional view of an embodiment of the present invention that includes dielectric layers surrounding the STO and MR sensor stacks.
- FIG. 8 is a top-down view of the embodiment in FIG. 7 that shows the overlay of the RF generator (MR sensor) on the non-magnetic conductive spacer which separates the STO and MR sensor components.
- MR sensor RF generator
- the present invention is a PSTO device wherein a high density STO current is isolated from a low density RF generation current.
- the perpendicular spin torque oscillator may be employed as a RF field generator in a magnetic recording head or may serve as a reference oscillator or directional microwave transmitter in devices such as cell phones, radar systems, and computer chips.
- the magnetic oscillation layer (MOL) as described herein is considered a “free” ferromagnetic layer in that its magnetization orientation is free to change (oscillate) in the presence of a direct current flowing perpendicular to the plane of the MOL and under the influence of an applied magnetic field.
- Magnetic layers as defined herein are ferromagnetic layers.
- a PSTO device is comprised of a STO component 43 and a RF generation component 44 hereafter referred to as “RF generator” or “MR sensor” that are separated by a non-magnetic conductive layer 24 .
- STO 43 is a GMR junction comprised of a PMA magnetic layer 21 that serves as a magnetic reference layer (MRL), and a stack including a first junction layer also known as non-magnetic spacer 22 , second PMA magnetic layer 23 a , and a soft magnetic layer 23 b that are sequentially formed on the MRL.
- MRL magnetic reference layer
- PMA layer 21 and second PMA layer 23 a may be comprised of a (Co/Ni) X lamination where x is between about 5 and 50 as described in related Headway application Ser. No. 12/800,196.
- the present invention is not limited to (Co/Ni) X laminated layers and layers 21 , 23 a may be any PMA layer used in the art.
- Spacer 22 may be made of a conductive material such as Cu, or may have a confining current pathway (CCP) configuration in which Cu pathways are formed in an oxide matrix such as AlO X .
- Layers 23 a , 23 b are exchange coupled to each other and form a composite magnetic oscillation layer (MOL) wherein the magnetization in each layer is free to oscillate when subjected to an applied magnetic field perpendicular to the planes of the layers, either in the (+) or ( ⁇ ) y-axis direction, and when an electric current of sufficiently high density flows in a direction perpendicular to the planes of the layers from a first electrical terminal 42 to a second electrical terminal 41 .
- MOL composite magnetic oscillation layer
- the high current density is in the range of 1 ⁇ 10 7 to 1 ⁇ 10 9 Amps/cm 2 in order to exceed the critical current density for causing a spin torque effect on the MOL. It is believed that reflected electrons from the MRUspacer interface excite the MOL layer and thereby induce an oscillation state in layers 23 a , 23 b with significant in-plane amplitude. Note that PMA layer 23 a oscillates with soft magnetic layer 23 b but at smaller amplitude. In other words, PMA layer 23 a has the same oscillation frequency as soft magnetic layer 23 b but a smaller in-plane magnetization component. Soft magnetic layer 23 b may be made of CoFe, a CoFe alloy, or a composite thereof, for example.
- Non-magnetic conductive layer 24 is preferably a metal made of Cu or the like or a metal alloy having a bottom surface that contacts an uppermost layer of STO 43 , and with a top surface that adjoins a bottom layer in RF generator 44 .
- conductive layer 24 has a width in an in-plane direction along the x-axis that is greater than the width w of the layers in STO 43 and RF generator 44 in order to allow an electrical connection to a first electrical terminal hereafter referred to as first terminal 42 .
- first terminal 42 may include a via ( FIG. 7 ) formed in a dielectric layer and between a top surface of conductive layer 24 and an overlying metal line (not shown).
- the via should be separated from the nearest point on sidewall 44 s by a sufficient distance such that a current flowing in the via does not produce an undesired magnetic field on RF generator 44 and especially on sensing layer 25 .
- the width w of RF generator 44 is essentially the same as that of STO 43 in the exemplary embodiment, the present invention also anticipates that the RF generator may have a width greater or less than the width of STO 43 .
- the thickness of conductive layer 24 is preferably less than or equal to that of sensing layer 25 or the combined thickness of layers 23 a , 23 b to minimize the distance between soft magnetic layer 23 b and the sensing layer and thereby strengthen magnetostatic coupling between layers 23 b , 25 .
- RF generator 44 is a magnetoresistive (MR) sensor with a TMR configuration also known as a magnetic tunnel junction (MTJ) wherein a magnetic sensing layer (sensing layer) 25 , a second junction layer hereafter referred to as tunnel junction layer 26 , reference layer 27 having an in-plane pinned magnetization, exchange coupling layer 28 , pinned layer 29 , and AFM layer 30 are sequentially formed on a top surface of conductive layer 24 .
- sensing layer 25 should have a Mst value within about ⁇ 50% of the Mst value for MOL layer ( 23 a , 23 b ) where Mst is the product of saturation magnetization (Ms) and film thickness (t).
- sensing layer 25 should be substantially the same as that of the area, combined thickness, and combined magnetic moment for layers 23 a , 23 b .
- sensing layer 25 may be a single layer or a composite and is magnetostatically coupled to soft magnetic layer 23 b such that when an oscillating state is established in the MOL, an oscillation state is induced in the sensing layer with substantially the same frequency as in layers 23 a , 23 b when the aforementioned Mst relationship is maintained.
- the MR sensor 44 and STO 43 have essentially the same width w
- the MR sensor is aligned vertically above the STO such that sidewalls 43 s , 44 s are substantially coplanar in order to provide an efficient magnetostatic coupling between soft magnetic layer 23 b and sensing layer 25 .
- a capping layer (not shown) may be formed between soft magnetic layer 23 b and conductive layer 24 but this configuration will increase the distance between soft magnetic layer 23 b and sensing layer 25 and result in less efficient coupling.
- Tunnel junction layer 26 may be comprised of a metal oxide such as AlOx, MgO, TiOx, or the like, or an oxide of a metal alloy.
- Reference layer 27 is a ferromagnetic layer that is magnetically coupled to pinned ferromagnetic layer 29 through a coupling layer 28 that is made of Ru, for example, to form a synthetic anti-ferromagnetic (SyAF) configuration that is pinned by AFM layer 30 . Therefore, reference layer 27 has a magnetization that is effectively pinned in an in-plane direction by the AFM layer 30 .
- An important feature of the PSTO of the first embodiment is a three electrical terminal configuration so that a high density current required to induce an oscillation state in STO 43 is isolated from RF generator 44 thereby preventing a breakdown in the MR sensor, and particularly in the tunnel junction layer 26 . Therefore, a first electrical pathway is established between first terminal 42 and second terminal 41 to carry high density STO current, and a second electrical pathway is formed between first terminal 42 and third terminal 43 to carry a RF generation current with a low density that is less than about 1 ⁇ 10 7 Amps/cm 2 .
- Second terminal 41 may be a bottom lead and third terminal 43 may be considered a top lead such as a capping layer or a conductive line.
- an external magnetic field 45 is applied to the entire PSTO structure including STO 43 and RF generator 44 .
- field 45 is applied along the (+) y-axis to align the perpendicular magnetization components of MRL 21 , MOL layers 23 a , 23 b , and sensing layer 25 in the same direction as the field direction.
- MRL 21 has an entirely perpendicular to plane magnetization orientation while layers 23 a , 23 b , 25 magnetizations are tilted partially out of the film plane.
- the applied field is preferably greater than about 1000 Oe, but as indicated in the example relating to FIG. 5 a , the optimum operating range may be from 5000 Oe to 8000 Oe depending on the Mst value of the MOL layers 23 a , 23 b .
- the PMA character of MRL 21 is relied upon to achieve a higher frequency oscillation of the MOL at a relatively low applied magnetic field.
- STO frequency may be “tuned” by changing the applied field within limits determined by the Mst value of layers 23 a , 23 b , 25 and in part by the PMA magnitude of MRL 21 .
- the oscillation state of MOL 23 a , 23 b is no longer maintained above approximately 8000 Oe as described in more detail in a later section.
- Magnetic field 45 may be applied by an electromagnet (not shown) or by another means used by one skilled in the art.
- the oscillating in-plane magnetization component in MOL layers 23 a , 23 b produces an alternating magnetic field in sensing layer 25 .
- the Mst value of MOL ( 23 a , 23 b ) is within a certain % of the Mst value for sensing layer 25 as discussed previously, then the intrinsic oscillation frequencies of the MOL and the sensing layer are substantially the same.
- the in-plane magnetization oscillation of sensing layer 25 has a 180 degree phase difference compared with that of MOL layers 23 a , 23 b .
- MOL and sensing layer 25 are in a pseudo anti-ferromagnetic coupled FMR mode.
- sensing layer 25 being part of MR sensor 44 and a DC current flowing between first terminal 42 and third terminal 43 in either direction
- an AC voltage signal can be generated between the first and third terminals from a resistance change in the MR sensor due to magnetostatic coupling between the sensing layer 25 and the oscillating MOL 23 a , 23 b .
- the RF frequency of the AC voltage signal may be changed by varying the field 45 amplitude because of the AFM coupling between MOL layers 23 a , 23 b and sensing layer 25 .
- FIG. 5 a experimental results are shown for a STO structure representative of the first embodiment depicted in FIG. 4 wherein the MRL 21 , and PMA layer 23 a are made of a Co/Ni laminated structure, and the soft magnetic layer 23 and sensing layer 25 are made of CoFe.
- FIG. 5 b results are shown for a STO similar to structure 11 in the prior art FIG. 1 .
- the structure representing STO 11 has a CoFe composition for soft magnetic layers and a laminated Co/Ni structure for PMA layers.
- the x-axis values are the field applied perpendicular to the film plane and the y-axis is the resistance measured from the STO elements that is offset by the STO resistance at zero field, and normalized to the full range resistance change of the STO.
- electrical leads are connected to the MOL and MRL (PMA) layers and a current flows through the STO stack with electrons traveling from MOL to the MRL in both cases.
- STO stack size, the MRL, the MOL soft magnetic layer, and the PMA layer in the MOL all have similar properties. The major difference is the PMA layer in the MOL is sandwiched between two soft magnetic layers in the prior art structure corresponding to the results in FIG.
- the dashed line is the STO resistance vs. field measured at low current density and the solid line is STO resistance vs. field at high current density.
- the optimum oscillation condition is determined by the applied field, current density, MOL layer thickness and moment, and is the point where oscillation begins with a large in-plane component thereby generating an effective angle increase between MOL and MRL magnetization which causes the observed resistance jump at about 5000 Oe.
- the abrupt resistance rise depicted at around 5000 Oe is a first order indicator of MOL oscillation initiation and strength.
- MOL experiences a higher vertical field and its in-plane component reduces during oscillation and results in a reduction in STO resistance.
- STO resistance returns to the original level observed at the 0 Oe condition and the oscillation state is terminated.
- a second embodiment of the present invention is depicted and retains all the features of the first embodiment except the composite MOL 23 a / 23 b in FIG. 4 is replaced by a single MOL 23 that may be a soft magnetic layer or a magnetic layer with PMA.
- sensing layer 25 has a Mst value within about ⁇ 50% of the Mst value for MOL 23 .
- an external magnetic field 45 is applied to the entire PSTO structure including STO 43 and RF generator 44 in either a (+) or ( ⁇ ) y-axis direction to align the perpendicular magnetization components of MRL 21 , MOL 23 , and sensing layer 25 in the same direction as the field direction.
- MRL 21 has an entirely perpendicular to plane magnetization orientation while MOL 23 and sensing layer 25 magnetizations are tilted partially out of the film plane.
- the oscillating in-plane magnetization component in MOL 23 produces an oscillating magnetic field in sensing layer 25 .
- the Mst value of MOL 23 is within a certain % of the Mst value for sensing layer 25 as discussed previously, then the intrinsic oscillation frequencies of MOL and the sensing layer are substantially the same.
- the in-plane magnetization oscillation of sensing layer 25 has a 180 degree phase difference compared with that of MOL 23 which means the MOL and sensing layer 25 are in a pseudo anti-ferromagnetic coupled FMR mode.
- sensing layer 25 being part of MR sensor 44 and a DC current flowing between first terminal 42 and third terminal 43 in either direction, an AC voltage signal can be generated between the first and third terminals from a resistance change in the MR sensor due to magnetostatic coupling between the sensing layer and the oscillating MOL 23 .
- the first terminal is comprised of a via 42 having a top surface that is connected to an overlying metal line (not shown), and a bottom surface which contacts conductive layer 24 . Note that all layers above the top surface 44 t of the MR sensor have been removed to focus attention on the PSTO device including the field tunable STO and RF generator described in the first and second embodiments.
- the PSTO structure in FIG. 7 may be fabricated by following a conventional method to initially form a STO 43 on second terminal 41 .
- a fabrication sequence typically involves depositing the entire STO stack of layers by a sputter deposition system on second terminal 41 , forming a photoresist masking layer on the top STO layer in which the desired shape and size of the STO is patterned by a lithography process, and transferring the photoresist mask shape through the STO stack by one or more etching steps.
- a first dielectric layer 50 may be deposited by a chemical vapor deposition (CVD) or a plasma enhanced CVD process, for example. Thereafter, a chemical mechanical polish (CMP) process may be employed to form a top surface of STO 43 that is coplanar with a top surface of first dielectric layer 50 .
- CVD chemical vapor deposition
- CMP chemical mechanical polish
- a conductive layer 24 is formed within a second dielectric layer 51 by a well known sequence such as a single damascene process followed by planarization with a CMP process.
- conductive layer 24 has a rectangular shape from a top-down view with one side 24 s aligned with a sidewall 44 s of the MR element that has a top surface 44 t .
- the present invention also encompasses other embodiments wherein the conductive layer has a shape other than a rectangle and/or may extend beyond the sidewall 44 s in all directions.
- conductive layer 24 covers the entire top surface of STO 43 (not shown) which is directly below top surface 44 t in the ( ⁇ ) y-axis direction or behind the plane of the paper. It is important to achieve good overlay of MR sensor 44 above STO 43 so that strong magnetostatic coupling is realized between the magnetic oscillation layer ( 23 , or 23 a + 23 b ) with sensing layer 25 as described previously. Overlay is optimized with the use of alignment marks during the aforementioned lithography process as appreciated by those skilled in the art. Although the exemplary embodiment shows a circular shape for top surface 44 t , the shape of the top surface of MR sensor 44 (and STO 43 ) is not necessarily circular and may be an ellipse or other shape used in the art.
- conductive layer 24 extends a certain distance v in an in-plane (x-axis) direction from the nearest side of MR sensor 44 .
- a fabrication scheme similar to that employed for forming STO 43 may be used to deposit the layers in the MR sensor 44 on the conductive layer and adjoining dielectric layer 51 , and then pattern the MR sensor stack to yield sidewall 44 s .
- sidewall 43 s is preferably formed along the same vertical plane as sidewall 44 s .
- top surface of STO 43 has a larger or smaller area size in the (x, z) plane than the bottom surface of MR sensor 44 , sidewall 43 s may not align vertically with sidewall 44 s .
- a third dielectric layer 52 is deposited and then a CMP process may be performed to form a top surface 52 t that is coplanar with top surface 44 t .
- via 42 may be formed within dielectric layer 52 by a damascene process, for example.
- a third electrical terminal 40 may be formed on top surface 44 t and within a fourth dielectric layer (not shown) in a scheme similar to that employed for fabricating conductive layer 24 on STO 43 and dielectric layer 50 .
- the embodiments of the present invention provide an advantage over the prior art in that a viable STO structure has been disclosed and demonstrated to be operable when an applied perpendicular field and a high density current are employed to excite an oscillation state in a MOL. Furthermore, oscillation frequency may be tuned in the MOL and in a magnetostatically coupled sensing layer within an adjacent MR sensor component by adjusting the magnitude of the applied field within a certain range. Device stability is maintained by implementing a three electrical terminal configuration to allow a high density current to flow only through the STO component while a low density current passes through a RF generator (TMR junction) component.
- TMR junction RF generator
- the unworkable dilemma of a two terminal design is avoided wherein a high density current is required to excite a magnetic oscillation layer but undesirably destroys the MR sensor junction needed to read the RF frequency of the oscillation.
- Another important advantage of the present invention over the prior art is that the MR sensor junction of the first and second embodiments described herein does not disrupt or have a parasitic effect on the STO oscillation because the MR sensor junction does not share any layers with the STO (GMR junction).
- the STO GMR junction and TMR junction in the MR sensor may be independently fabricated which enables each junction to be optimized separately without comprising the performance of the other junction.
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Abstract
Description
- This application is related to the following: Docket #HT09-037, Ser. No. 12/800,196, filing date May 11, 10; assigned to the same assignee and herein incorporated by reference in its entirety.
- The invention relates to a perpendicular spin transfer oscillator (PSTO) used for thin film applications such as a RF field generator in spintronic device, and in particular to a PSTO structure having a three electrical terminal structure wherein a high density current is flowed through a GMR junction to induce a magnetic oscillation layer into an oscillation state; and a low density RF signal generation current is flowed though an adjacent TMR junction for sensing an oscillation frequency.
- Spin transfer (spin torque) devices are based on a spin-transfer effect that arises from the spin dependent electron transport properties of ferromagnetic-spacer-ferromagnetic multilayers. When a spin-polarized current transverses a magnetic multilayer in a CPP (current perpendicular to plane) configuration, the spin angular moment of electrons incident on a ferromagnetic layer interacts with magnetic moments of the ferromagnetic layer near the interface between the ferromagnetic and non-magnetic spacer. Through this interaction, the electrons transfer a portion of their angular momentum to the ferromagnetic layer. As a result, spin-polarized current can switch the magnetization direction of the ferromagnetic layer if the current density is sufficiently high, and if the dimensions of the multilayer are small. Spin transfer devices also known as spintronic devices wherein at least one of the ferromagnetic layers in a magnetoresistive (MR) junction has perpendicular magnetic anisotropy have an advantage over devices based solely on in-plane anisotropy in that they can satisfy the thermal stability requirement but also have no limit of cell aspect ratio. As a result, spin valve structures based on PMA are capable of scaling for higher packing density which is a key challenge for future MRAM (Magnetoresistive Random Access Memory) applications and other spintronic devices such as microwave generators.
- A spin transfer oscillator (STO) is a magneto-resistive (MR) thin film device which can have an induced RF frequency magnetization oscillation within at least one of its magnetic layers by applying an electrical current. As described in U.S. Pat. No. 7,616,412, an STO may be used as a high Q factor RF signal generator if the oscillating magnetization is transformed into resistance fluctuations through a MR effect. An STO comprises at least three layers including a magnetic oscillating layer (MOL), a magnetic reference layer (MRL), and a non-magnetic spacer sandwiched between the MOL and MRL. These three layers may be considered a junction. When electrons transit the MRL and become polarized, the polarized electrons then pass through the non-magnetic spacer and through the MOL to induce a gyromagnetic oscillation also known as ferromagnetic resonance (FMR) in the MOL. A PSTO (perpendicular spin torque oscillator) is a version of an STO wherein the MRL has perpendicular magnetic anisotropy (PMA) and is magnetized in a direction perpendicular to planes of the junction layers. With a perpendicular magnetization of the MRL, a full amplitude in-plane oscillation of the MOL can be achieved.
- Referring to
FIG. 1 , a PSTO structure is depicted from U.S. Pat. No. 7,616,412 and includesMRL 1 that has intrinsic anisotropy which keeps its magnetization perpendicular to the film plane,non-magnetic junction layer 2, and MOL which is a composite comprised of layers 31-33.Layers middle layer 32 has aperpendicular anisotropy 34 normal to the film plane that biaseslayers Layers PSTO component 11 of the stack. There are other layers 4-8 above theMOL 3 for sensing the magnetization oscillation of the MOL. In particular,second junction layer 4,reference layer 5 with in-plane magnetization,non-magnetic exchange layer 6 typically made of Ru, and pinnedlayer 7 are sequentially formed as asecond stack 12 onPSTO stack 11. Layers 5-7 comprise a generic synthetic anti-ferromagnetic (SAF) configuration commonly used in commercial giant magnetoresistive (GMR) or tunneling magnetoresistive (TMR) sensors.Anti-ferromagnetic layer 8pins reference layer 5 and pinnedlayer 7 through exchange coupling. - During an operating mode, electrons flow through the entire stack from bottom
electrical contact 10 to top electrical contact 9, andMRL 1 magnetization is oriented in the opposite direction to that of MOL layers 31-33. As a result of the spin torque effect, electrons passing through thejunction layer 2 excite MOL layers 31-33 magnetization from a quiescent near vertical state into an oscillation state. PSTO 11 is intrinsically a MR junction in which relative magnetization angle change betweenlayers 1 and 31-33 will produce a resistance change acrossstack 11 that can be measured as a voltage signal when a current flows through the stack. However, when MOL layers 31-33 reach a stable magnetic oscillation with a significant amount of in-plane magnetization component, the relative angle between the magnetizations ofMRL 1 and MOL 31-33 does not really change which makes it difficult to generate an electrical signal through the resistance change of the MR junction to reflect the MOL oscillation. For RF voltage signal generation purposes, the prior art utilizes SAF and AFM layers above MOL 31-33 wherereference layer 5 serves to generate a MR resistance change during MOL magnetization oscillation. Therefore,layers MOL layer 33 andreference layer 5 produces an effective resistance. As current flows betweencontacts 9 and 10, a voltage signal reflecting MOL layer magnetization oscillation can be produced across the entire stack. - However, there are disadvantages associated with the prior art as pictured in
FIG. 1 . First of all, sinceMOL layer 33 is used both as part of the oscillation layer in the lower MR junction and as a signal layer for the top MR junction, there is a continuous current across the two junctions. For efficient STO induced MOL oscillation,layer 2 is preferably metal to result in a lower junction based on a GMR (giant magnetoresistive) effect in which resistivity is generally quite low and current density is relatively high in order to induce MOL oscillation. On the other hand, for high signal output, the topjunction involving layer 4 is preferably a TMR (tunneling magnetoresistive) element having a resistivity that is substantially larger than that of the lower GMR junction. As a result of the high current density required to excite MOL oscillation, the top TMR junction will be at a voltage drop exceeding its break down voltage. In other words, a GMR junction and a TMR junction cannot be used in the same device in a configuration where a high density current flows through both structures. This dilemma significantly limits theFIG. 1 structure applicability for actual STO RF signal generation. - Secondly, the spin torque effect from the top MR junction that is comprised of
layers STO stack 11 so that MOL oscillation quality is degraded by the presence of the SAF layers 5-7 andAFM layer 8. Simulation data is available to support this fact and is presented inFIGS. 2 a-2 b, andFIGS. 3 a-3 b. - Referring to
FIGS. 2 a-2 b andFIGS. 3 a-3 b, micro-magnetic simulations are shown for a PSTO comprised ofstack 11 only (FIGS. 2 a, 3 a) and for a PSTO that includes all layers 1-8 inFIG. 1 as depicted inFIGS. 2 b, 3 b.FIG. 2 a is the oscillation time trace of the in-plane magnetization component for MOL instack 11 only, andFIG. 2 b is a similar oscillation time trace for a PSTO having all layers inFIG. 1 .FIG. 3 a andFIG. 3 b are the corresponding power-spectrum-density (PSD) plots of the time traces inFIGS. 2 a, 2 b, respectively, where the FMR peak represents the frequency and power of the oscillation. When a top junction, SAF and AFM layers are included in a PSTO stack as represented inFIGS. 2 b, 3 b, MOL oscillation shows irregular behavior and lower power than in the case ofPSTO stack 11 only. Therefore, although the additional layers 4-8 are useful in acquiring oscillation information of the MOL 31-33, the second (top) MR junction also changes the MOL oscillation behavior. The change to irregular oscillations and lower power is especially not desirable when uniform and high power MOL oscillation is required on a continuous basis for optimum performance while characterization of oscillation frequency is only needed occasionally, for example, when the PSTO is used as a RF field generator in a magnetic recording device. - Another disadvantage of the
FIG. 1 structure is that thePMA layer 32 is separated from thelower junction layer 2 by a softmagnetic layer 31. This configuration is found not to be effective for generating STO induced oscillation in MOL 31-33 in actual fabricated devices as will be explained later with regard toFIG. 5 b. - U.S. Patent App. Publication 2009/0201614 discloses a hybrid spin torque oscillator having a separate oscillating field generating unit that supplies an oscillating field through magnetostatic coupling to a magnetoresistive (MR) element. When a DC current is applied to the MR element in the presence of the oscillating field, magnetic resonance occurs in the MR free layer. An AC component is formed by device resistance variation as a function of time and is extracted by a bias tee formed with a capacitor and an inductor to obtain a microwave output.
- U.S. Pat. No. 7,589,600 describes the use of an electromagnet to provide an in-plane field that induces an oscillation in a STO structure.
- In U.S. Pat. No. 7,009,877, a three terminal structure is employed in spin torque switching of a MRAM storage layer wherein the switched state is sensed with a MTJ.
- U.S. Patent Application 2010/0110592 discloses a STO having a non-magnetic layer disposed between a first magnetic layer and a second magnetic layer. A magnetic field is applied in a direction substantially perpendicular to the principal plane and a current is passed perpendicular to the principal plane.
- U.S. Pat. No. 7,652,915 describes spin torque microwave oscillation wherein the oscillation frequency is a function of the memory element size, shape, and anisotropy. The memory element is read by measuring resistance either with a DC current or by measuring the resonant frequency.
- U.S. Pat. No. 7,764,538 teaches vertical current flow from an oscillator to a MTJ.
- In U.S. Patent Application 2009/0310244, an electromagnetic field generating element is disclosed that comprises a spin wave excitation layer adjacent to a first magnetic pole and having its magnetization direction varied in response to external magnetic fields. A spin wave excitation current flows perpendicular to the layer planes from the first magnetic pole to a second magnetic pole.
- One objective of the present invention is to provide a PSTO RF signal generator structure in which at least one layer in the STO component is capable of being excited into a magnetization oscillation state.
- A second objective of the present invention is to provide a PSTO structure wherein an applied magnetic field is used in combination with a high density current to induce a STO layer into an oscillation state and the resulting oscillation frequency may be tuned by varying the field after oscillation is initiated.
- Another objective of the present invention is to provide a three electrical terminal structure to isolate a high density STO current through a GMR junction from a low density RF signal generation current in an adjacent TMR junction.
- According to one embodiment of the present invention, these objectives are achieved in a PSTO device wherein a STO component comprised of a MRUfirst spacer/MOL stack in a GMR configuration is electrically isolated from a RF signal generation stack having a sensing layer/second spacer/reference layer/AFM configuration in a magnetoresistive (MR) sensor wherein the second spacer is a tunnel junction layer. The upper MOL layer in the STO stack and the lower sensing layer in the MR sensor stack are separated by a non-magnetic conductive layer but are magnetostatically coupled. A first terminal is connected to the non-magnetic conductive layer, a second terminal is connected to the MRL, and a third terminal is connected to the upper layer in the MR sensor.
- The MRL in the STO stack has perpendicular magnetic anisotropy (PMA), and the first spacer is preferably a conductive metal such as Cu. In one embodiment, the MOL is a composite with a lower PMA magnetic layer adjoining a top surface of the first spacer, and an upper soft magnetic layer abutting a bottom surface of the non-magnetic conductive layer wherein the lower PMA layer and upper soft magnetic layer are exchange coupled. The MR sensor with a TMR junction may be comprised of a stack in which a magnetic sensing layer, tunnel junction layer, reference layer, exchange layer, pinned layer, and an anti-ferromagnetic (AFM) layer are sequentially formed on a top surface of the non-magnetic conductive layer. The soft magnetic layer in the STO and the magnetic sensing layer in the TMR element experience magnetostatic coupling when their magnetizations have an in-plane component. During an operating mode, a magnetic field is applied in a direction perpendicular to the planes of the STO and TMR junction layers. When a high density current flows from the second terminal to the first terminal, a certain portion of electrons are reflected from the MRUfirst spacer interface back into the MOL layer to induce a magnetization oscillation with a significant in-plane magnetization component. The lower PMA layer oscillates together with the upper soft magnetic layer but at a smaller amplitude. As a result, the sensing layer in the TMR stack also oscillates under the magnetostatic coupling influence of the soft magnetic layer and thereby produces a varying voltage across the TMR element. MOL and the TMR sensing layer preferably have substantially the same thickness, size, and magnetic moment (Mst value) such that under the same applied field, the intrinsic oscillation frequencies of the two layers are substantially the same. A low density current is flowed between the second and third terminals in either direction to generate an AC voltage signal to determine RF frequency in the sensing layer.
- In a second embodiment, the features of the first embodiment are retained except the MOL in the STO stack is a single layer that may be a soft magnetic layer or a magnetic layer having a certain PMA. Preferably, the TMR sensing layer has a magnetic property, physical size, and thickness substantially the same as that of the MOL in order to promote efficient magnetostatic coupling between the two layers and induce a magnetization oscillation in the TMR sensing layer when the MOL is excited into an oscillation state.
-
FIG. 1 is a cross-sectional view of a prior art PSTO structure in which magnetization oscillation frequency is sensed by means of an additional stack of layers formed above the PSTO stack. -
FIG. 2 a is a plot showing an oscillation time trace of the in-plane magnetization component of the MOL layer for stack 11 (FIG. 1 ) only, andFIG. 2 b is a similar oscillation time trace for all layers inFIG. 1 between upper and lower contacts. -
FIG. 3 a is the corresponding power-spectrum-density (PSD) of the time traces inFIG. 2 a, andFIG. 3 b is the corresponding PSD of the time traces inFIG. 2 b where the FMR peak represents the frequency and power of the oscillation. -
FIG. 4 is a cross-sectional view of a PSTO with a three terminal structure in which a STO current flows through a lower GMR stack and a RF signal generation current flows through an upper TMR element according to one embodiment of the present invention. -
FIG. 5 a is a plot showing experiment results for STO resistance vs. field at low and high current densities for a field tunable STO structure according to an embodiment of the present invention. -
FIG. 5 b is a plot showing experiment results for STO resistance vs. field at low and high current densities for a PSTO structure formed according to a prior art reference. -
FIG. 6 is a cross-sectional view of a PSTO with a three terminal structure in which a STO current flows through a lower GMR stack and a RF signal generation current flows through an upper TMR element according to a second embodiment of the present invention. -
FIG. 7 is a cross-sectional view of an embodiment of the present invention that includes dielectric layers surrounding the STO and MR sensor stacks. -
FIG. 8 is a top-down view of the embodiment inFIG. 7 that shows the overlay of the RF generator (MR sensor) on the non-magnetic conductive spacer which separates the STO and MR sensor components. - The present invention is a PSTO device wherein a high density STO current is isolated from a low density RF generation current. The perpendicular spin torque oscillator may be employed as a RF field generator in a magnetic recording head or may serve as a reference oscillator or directional microwave transmitter in devices such as cell phones, radar systems, and computer chips. The magnetic oscillation layer (MOL) as described herein is considered a “free” ferromagnetic layer in that its magnetization orientation is free to change (oscillate) in the presence of a direct current flowing perpendicular to the plane of the MOL and under the influence of an applied magnetic field. Magnetic layers as defined herein are ferromagnetic layers.
- Referring to
FIG. 4 , a first embodiment of the present invention is depicted wherein a PSTO device is comprised of aSTO component 43 and aRF generation component 44 hereafter referred to as “RF generator” or “MR sensor” that are separated by a non-magneticconductive layer 24. In one aspect,STO 43 is a GMR junction comprised of a PMAmagnetic layer 21 that serves as a magnetic reference layer (MRL), and a stack including a first junction layer also known asnon-magnetic spacer 22, second PMAmagnetic layer 23 a, and a soft magnetic layer 23 b that are sequentially formed on the MRL. It should be understood that additional layers such as a seed layer may be formed betweenMRL 21 and a substrate (not shown), and the MRL may be laminated in order to achieve an optimum PMA value. According to one embodiment,PMA layer 21 andsecond PMA layer 23 a may be comprised of a (Co/Ni)X lamination where x is between about 5 and 50 as described in related Headway application Ser. No. 12/800,196. However, the present invention is not limited to (Co/Ni)X laminated layers and layers 21, 23 a may be any PMA layer used in the art. -
Spacer 22 may be made of a conductive material such as Cu, or may have a confining current pathway (CCP) configuration in which Cu pathways are formed in an oxide matrix such as AlOX.Layers 23 a, 23 b are exchange coupled to each other and form a composite magnetic oscillation layer (MOL) wherein the magnetization in each layer is free to oscillate when subjected to an applied magnetic field perpendicular to the planes of the layers, either in the (+) or (−) y-axis direction, and when an electric current of sufficiently high density flows in a direction perpendicular to the planes of the layers from a firstelectrical terminal 42 to a secondelectrical terminal 41. The high current density is in the range of 1×107 to 1×109 Amps/cm2 in order to exceed the critical current density for causing a spin torque effect on the MOL. It is believed that reflected electrons from the MRUspacer interface excite the MOL layer and thereby induce an oscillation state inlayers 23 a, 23 b with significant in-plane amplitude. Note thatPMA layer 23 a oscillates with soft magnetic layer 23 b but at smaller amplitude. In other words,PMA layer 23 a has the same oscillation frequency as soft magnetic layer 23 b but a smaller in-plane magnetization component. Soft magnetic layer 23 b may be made of CoFe, a CoFe alloy, or a composite thereof, for example. - Non-magnetic
conductive layer 24 is preferably a metal made of Cu or the like or a metal alloy having a bottom surface that contacts an uppermost layer ofSTO 43, and with a top surface that adjoins a bottom layer inRF generator 44. Preferably,conductive layer 24 has a width in an in-plane direction along the x-axis that is greater than the width w of the layers inSTO 43 andRF generator 44 in order to allow an electrical connection to a first electrical terminal hereafter referred to asfirst terminal 42. For example,first terminal 42 may include a via (FIG. 7 ) formed in a dielectric layer and between a top surface ofconductive layer 24 and an overlying metal line (not shown). In this case, the via should be separated from the nearest point onsidewall 44 s by a sufficient distance such that a current flowing in the via does not produce an undesired magnetic field onRF generator 44 and especially onsensing layer 25. Although the width w ofRF generator 44 is essentially the same as that ofSTO 43 in the exemplary embodiment, the present invention also anticipates that the RF generator may have a width greater or less than the width ofSTO 43. The thickness ofconductive layer 24 is preferably less than or equal to that ofsensing layer 25 or the combined thickness oflayers 23 a, 23 b to minimize the distance between soft magnetic layer 23 b and the sensing layer and thereby strengthen magnetostatic coupling betweenlayers 23 b, 25. - According to one embodiment,
RF generator 44 is a magnetoresistive (MR) sensor with a TMR configuration also known as a magnetic tunnel junction (MTJ) wherein a magnetic sensing layer (sensing layer) 25, a second junction layer hereafter referred to astunnel junction layer 26,reference layer 27 having an in-plane pinned magnetization,exchange coupling layer 28, pinnedlayer 29, andAFM layer 30 are sequentially formed on a top surface ofconductive layer 24. A key feature is that sensinglayer 25 should have a Mst value within about ±50% of the Mst value for MOL layer (23 a, 23 b) where Mst is the product of saturation magnetization (Ms) and film thickness (t). Thus, the magnetic moment, thickness, and in-plane area size ofsensing layer 25 should be substantially the same as that of the area, combined thickness, and combined magnetic moment forlayers 23 a, 23 b. Moreover, sensinglayer 25 may be a single layer or a composite and is magnetostatically coupled to soft magnetic layer 23 b such that when an oscillating state is established in the MOL, an oscillation state is induced in the sensing layer with substantially the same frequency as inlayers 23 a, 23 b when the aforementioned Mst relationship is maintained. Preferably, in an embodiment whereinMR sensor 44 andSTO 43 have essentially the same width w, the MR sensor is aligned vertically above the STO such that sidewalls 43 s , 44 s are substantially coplanar in order to provide an efficient magnetostatic coupling between soft magnetic layer 23 b andsensing layer 25. In a less preferred embodiment, a capping layer (not shown) may be formed between soft magnetic layer 23 b andconductive layer 24 but this configuration will increase the distance between soft magnetic layer 23 b andsensing layer 25 and result in less efficient coupling. -
Tunnel junction layer 26 may be comprised of a metal oxide such as AlOx, MgO, TiOx, or the like, or an oxide of a metal alloy.Reference layer 27 is a ferromagnetic layer that is magnetically coupled to pinnedferromagnetic layer 29 through acoupling layer 28 that is made of Ru, for example, to form a synthetic anti-ferromagnetic (SyAF) configuration that is pinned byAFM layer 30. Therefore,reference layer 27 has a magnetization that is effectively pinned in an in-plane direction by theAFM layer 30. - An important feature of the PSTO of the first embodiment is a three electrical terminal configuration so that a high density current required to induce an oscillation state in
STO 43 is isolated fromRF generator 44 thereby preventing a breakdown in the MR sensor, and particularly in thetunnel junction layer 26. Therefore, a first electrical pathway is established between first terminal 42 and second terminal 41 to carry high density STO current, and a second electrical pathway is formed between first terminal 42 and third terminal 43 to carry a RF generation current with a low density that is less than about 1×107 Amps/cm2.Second terminal 41 may be a bottom lead and third terminal 43 may be considered a top lead such as a capping layer or a conductive line. - During an operating mode, an external
magnetic field 45 is applied to the entire PSTOstructure including STO 43 andRF generator 44. In the exemplary embodiment,field 45 is applied along the (+) y-axis to align the perpendicular magnetization components ofMRL 21, MOL layers 23 a, 23 b, andsensing layer 25 in the same direction as the field direction. Preferably,MRL 21 has an entirely perpendicular to plane magnetization orientation whilelayers second terminal 41, electrons pass through MOL layers 23 a, 23 b toMRL 21 but it is believed that electrons reflected from theMRUspacer 22 interface are responsible for exciting the MOL magnetization from a quiescent state into a significant in-plane oscillation. In an alternative embodiment, where the externalmagnetic field 45 is applied in a (−) y-axis direction, the resulting oscillation state in MOL layers 23 a, 23 b and insensing layer 25 will have an in-plane component, and a perpendicular component pointing in the same direction as the applied field. - In general, the applied field is preferably greater than about 1000 Oe, but as indicated in the example relating to
FIG. 5 a, the optimum operating range may be from 5000 Oe to 8000 Oe depending on the Mst value of the MOL layers 23 a, 23 b. The PMA character ofMRL 21 is relied upon to achieve a higher frequency oscillation of the MOL at a relatively low applied magnetic field. There is also a maximum effective field magnitude related to the aforementioned Mst value. For instance, inFIG. 5 a, as the field increases from 5000 Oe to 10000 Oe, resistance in the STO junction decreases and oscillation frequency increases. Thus, STO frequency may be “tuned” by changing the applied field within limits determined by the Mst value oflayers MRL 21. InFIG. 5 a, the oscillation state ofMOL 23 a, 23 b is no longer maintained above approximately 8000 Oe as described in more detail in a later section.Magnetic field 45 may be applied by an electromagnet (not shown) or by another means used by one skilled in the art. - During the operating mode, the oscillating in-plane magnetization component in MOL layers 23 a, 23 b produces an alternating magnetic field in
sensing layer 25. When the Mst value of MOL (23 a, 23 b) is within a certain % of the Mst value for sensinglayer 25 as discussed previously, then the intrinsic oscillation frequencies of the MOL and the sensing layer are substantially the same. However, the in-plane magnetization oscillation ofsensing layer 25 has a 180 degree phase difference compared with that of MOL layers 23 a, 23 b. In effect, MOL andsensing layer 25 are in a pseudo anti-ferromagnetic coupled FMR mode. Therefore, withsensing layer 25 being part ofMR sensor 44 and a DC current flowing between first terminal 42 and third terminal 43 in either direction, an AC voltage signal can be generated between the first and third terminals from a resistance change in the MR sensor due to magnetostatic coupling between thesensing layer 25 and theoscillating MOL 23 a, 23 b. Furthermore, the RF frequency of the AC voltage signal may be changed by varying thefield 45 amplitude because of the AFM coupling between MOL layers 23 a, 23 b andsensing layer 25. - Referring to
FIG. 5 a, experimental results are shown for a STO structure representative of the first embodiment depicted inFIG. 4 wherein theMRL 21, andPMA layer 23 a are made of a Co/Ni laminated structure, and the softmagnetic layer 23 andsensing layer 25 are made of CoFe. InFIG. 5 b, results are shown for a STO similar tostructure 11 in the prior artFIG. 1 . Like the STO structure built forFIG. 5 b measurements, thestructure representing STO 11 has a CoFe composition for soft magnetic layers and a laminated Co/Ni structure for PMA layers. In both plots, the x-axis values are the field applied perpendicular to the film plane and the y-axis is the resistance measured from the STO elements that is offset by the STO resistance at zero field, and normalized to the full range resistance change of the STO. During the test, electrical leads are connected to the MOL and MRL (PMA) layers and a current flows through the STO stack with electrons traveling from MOL to the MRL in both cases. In both examples, STO stack size, the MRL, the MOL soft magnetic layer, and the PMA layer in the MOL all have similar properties. The major difference is the PMA layer in the MOL is sandwiched between two soft magnetic layers in the prior art structure corresponding to the results inFIG. 5 b while the MOL PMA layer adjoins a Cu spacer in a structure according to a first embodiment of the present invention represented inFIG. 4 and corresponding to results inFIG. 5 a. In each plot, the dashed line is the STO resistance vs. field measured at low current density and the solid line is STO resistance vs. field at high current density. - When comparing the data in
FIG. 5 a withFIG. 5 b, note that at both low and high current densities with an applied field of 6000 Oe and 5000 Oe, respectively, STO resistance rises to a higher level in theFIG. 5 a plot. With regard toFIG. 5 a, it should be understood that the magnetization state changes as current magnitude increases. For example, at 0 Oe and high current density, MOL magnetization is mostly in-plane and the relative angle between MOL and PMA layer (MRL) 21 magnetization is approximately 90 degrees. As the applied vertical field increases, MOL magnetization gradually rotates out of plane and the relative angle between MOL and MRL becomes smaller to produce a lower STO resistance until about 5000 Oe where the MOL reaches an optimal oscillation condition. The optimum oscillation condition is determined by the applied field, current density, MOL layer thickness and moment, and is the point where oscillation begins with a large in-plane component thereby generating an effective angle increase between MOL and MRL magnetization which causes the observed resistance jump at about 5000 Oe. Note that the abrupt resistance rise depicted at around 5000 Oe is a first order indicator of MOL oscillation initiation and strength. As the field increases from 5000 Oe to about 8000 Oe, MOL experiences a higher vertical field and its in-plane component reduces during oscillation and results in a reduction in STO resistance. Between 8000 and 10000 Oe, STO resistance returns to the original level observed at the 0 Oe condition and the oscillation state is terminated. - On the other hand, there is no resistance jump that appears in
FIG. 5 b for either the high or low current density case. Therefore, the data indicates the MOL is never excited into an oscillation mode. In fact, when current direction is reversed to allow electrons to flow from MRL to MOL as described in the prior art, the MOL excitation feature is still not found even at high current densities. Therefore, we conclude that a vertical field is required for exciting the MOL into an oscillation mode in a perpendicular STO structure even when the MOL includes a PMA layer. Moreover, the PMA portion of the MOL should adjoin the spacer layer to take full advantage of reflected electrons from the MRUspacer interface that are necessary to excite the MOL into an oscillation mode. In other words, the prior art STO pictured inFIG. 1 is not practical for establishing an MOL oscillation state while the STO structure according to the first embodiment of the present invention inFIG. 3 is a viable candidate. - Referring to
FIG. 6 , a second embodiment of the present invention is depicted and retains all the features of the first embodiment except thecomposite MOL 23 a /23 b inFIG. 4 is replaced by asingle MOL 23 that may be a soft magnetic layer or a magnetic layer with PMA. Preferably, sensinglayer 25 has a Mst value within about ±50% of the Mst value forMOL 23. - During an operating mode, an external
magnetic field 45 is applied to the entire PSTOstructure including STO 43 andRF generator 44 in either a (+) or (−) y-axis direction to align the perpendicular magnetization components ofMRL 21,MOL 23, andsensing layer 25 in the same direction as the field direction. Preferably,MRL 21 has an entirely perpendicular to plane magnetization orientation whileMOL 23 andsensing layer 25 magnetizations are tilted partially out of the film plane. When a high density current flows from first terminal 42 tosecond terminal 41, electrons pass throughMOL layer 23 toMRL 21. A portion of the electrons are reflected from theMRUspacer 22 interface back into the MOL to excite the MOL magnetization from a quiescent state into a significant in-plane oscillation. Subsequently, the oscillating in-plane magnetization component inMOL 23 produces an oscillating magnetic field insensing layer 25. When the Mst value ofMOL 23 is within a certain % of the Mst value for sensinglayer 25 as discussed previously, then the intrinsic oscillation frequencies of MOL and the sensing layer are substantially the same. However, the in-plane magnetization oscillation ofsensing layer 25 has a 180 degree phase difference compared with that ofMOL 23 which means the MOL andsensing layer 25 are in a pseudo anti-ferromagnetic coupled FMR mode. Therefore, withsensing layer 25 being part ofMR sensor 44 and a DC current flowing between first terminal 42 and third terminal 43 in either direction, an AC voltage signal can be generated between the first and third terminals from a resistance change in the MR sensor due to magnetostatic coupling between the sensing layer and theoscillating MOL 23. - Referring to
FIG. 7 , a cross-sectional view is shown of an embodiment of the present invention whereindielectric layers MR sensor 44, respectively, and thesecond terminal 41 is a conductive layer. It should be understood thatsecond terminal 41 may be formed coplanar with a dielectric layer (not shown) which electrically isolates the second terminal from other adjacent conductive lines (not shown). According to another aspect, the first terminal is comprised of a via 42 having a top surface that is connected to an overlying metal line (not shown), and a bottom surface which contacts conductivelayer 24. Note that all layers above thetop surface 44 t of the MR sensor have been removed to focus attention on the PSTO device including the field tunable STO and RF generator described in the first and second embodiments. - Those skilled in the art will appreciate that according to one embodiment, the PSTO structure in
FIG. 7 may be fabricated by following a conventional method to initially form aSTO 43 onsecond terminal 41. A fabrication sequence typically involves depositing the entire STO stack of layers by a sputter deposition system onsecond terminal 41, forming a photoresist masking layer on the top STO layer in which the desired shape and size of the STO is patterned by a lithography process, and transferring the photoresist mask shape through the STO stack by one or more etching steps. Once the STO is patterned andsidewall 43 s formed, the photoresist layer is removed and afirst dielectric layer 50 may be deposited by a chemical vapor deposition (CVD) or a plasma enhanced CVD process, for example. Thereafter, a chemical mechanical polish (CMP) process may be employed to form a top surface ofSTO 43 that is coplanar with a top surface of firstdielectric layer 50. - Subsequently, a
conductive layer 24 is formed within asecond dielectric layer 51 by a well known sequence such as a single damascene process followed by planarization with a CMP process. In the exemplary embodiment (FIG. 8 ),conductive layer 24 has a rectangular shape from a top-down view with oneside 24 s aligned with asidewall 44 s of the MR element that has atop surface 44 t. However, the present invention also encompasses other embodiments wherein the conductive layer has a shape other than a rectangle and/or may extend beyond thesidewall 44 s in all directions. Preferably,conductive layer 24 covers the entire top surface of STO 43 (not shown) which is directly belowtop surface 44 t in the (−) y-axis direction or behind the plane of the paper. It is important to achieve good overlay ofMR sensor 44 aboveSTO 43 so that strong magnetostatic coupling is realized between the magnetic oscillation layer (23, or 23 a+23 b) withsensing layer 25 as described previously. Overlay is optimized with the use of alignment marks during the aforementioned lithography process as appreciated by those skilled in the art. Although the exemplary embodiment shows a circular shape fortop surface 44 t, the shape of the top surface of MR sensor 44 (and STO 43) is not necessarily circular and may be an ellipse or other shape used in the art. - Returning to
FIG. 7 ,conductive layer 24 extends a certain distance v in an in-plane (x-axis) direction from the nearest side ofMR sensor 44. In a following sequence of steps, a fabrication scheme similar to that employed for formingSTO 43 may be used to deposit the layers in theMR sensor 44 on the conductive layer and adjoiningdielectric layer 51, and then pattern the MR sensor stack to yieldsidewall 44 s. In an embodiment wherein thesidewalls sidewall 43 s is preferably formed along the same vertical plane assidewall 44 s. In an alternative embodiment wherein the top surface ofSTO 43 has a larger or smaller area size in the (x, z) plane than the bottom surface ofMR sensor 44,sidewall 43 s may not align vertically withsidewall 44 s. After sidewall 44 s is formed, athird dielectric layer 52 is deposited and then a CMP process may be performed to form atop surface 52 t that is coplanar withtop surface 44 t. Subsequently, via 42 may be formed withindielectric layer 52 by a damascene process, for example. According to one embodiment, a thirdelectrical terminal 40 may be formed ontop surface 44 t and within a fourth dielectric layer (not shown) in a scheme similar to that employed for fabricatingconductive layer 24 onSTO 43 anddielectric layer 50. - The embodiments of the present invention provide an advantage over the prior art in that a viable STO structure has been disclosed and demonstrated to be operable when an applied perpendicular field and a high density current are employed to excite an oscillation state in a MOL. Furthermore, oscillation frequency may be tuned in the MOL and in a magnetostatically coupled sensing layer within an adjacent MR sensor component by adjusting the magnitude of the applied field within a certain range. Device stability is maintained by implementing a three electrical terminal configuration to allow a high density current to flow only through the STO component while a low density current passes through a RF generator (TMR junction) component. Therefore, the unworkable dilemma of a two terminal design is avoided wherein a high density current is required to excite a magnetic oscillation layer but undesirably destroys the MR sensor junction needed to read the RF frequency of the oscillation. Another important advantage of the present invention over the prior art is that the MR sensor junction of the first and second embodiments described herein does not disrupt or have a parasitic effect on the STO oscillation because the MR sensor junction does not share any layers with the STO (GMR junction). Furthermore, the STO GMR junction and TMR junction in the MR sensor may be independently fabricated which enables each junction to be optimized separately without comprising the performance of the other junction.
- While this invention has been particularly shown and described with reference to, the preferred embodiment thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of this invention.
Claims (21)
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6721141B1 (en) * | 1998-07-10 | 2004-04-13 | Interuniversitair Microelektronica Centrum (Imecvzw) | Spin-valve structure and method for making spin-valve structures |
US7961439B2 (en) * | 2003-06-30 | 2011-06-14 | Kabushiki Kaisha Toshiba | High-frequency oscillation element, magnetic information recording head, and magnetic storage device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7009877B1 (en) | 2003-11-14 | 2006-03-07 | Grandis, Inc. | Three-terminal magnetostatically coupled spin transfer-based MRAM cell |
US7616412B2 (en) | 2006-07-21 | 2009-11-10 | Carnegie Melon University | Perpendicular spin-torque-driven magnetic oscillator |
US7589600B2 (en) | 2006-10-31 | 2009-09-15 | Seagate Technology Llc | Spin oscillator device |
US7652915B2 (en) | 2006-12-19 | 2010-01-26 | Hitachi Global Storage Technologies Netherlands B.V. | High density spin torque three dimensional (3D) memory arrays addressed with microwave current |
JP5224803B2 (en) | 2007-12-26 | 2013-07-03 | 株式会社日立製作所 | Magnetic memory and magnetic memory writing method |
JP5036585B2 (en) | 2008-02-13 | 2012-09-26 | 株式会社東芝 | Magnetic oscillation element, magnetic head having the magnetic oscillation element, and magnetic recording / reproducing apparatus |
US20090310244A1 (en) | 2008-06-17 | 2009-12-17 | Tdk Corporation | Thin-film magnetic head for microwave assist and microwave-assisted magnetic recording method |
JP5173750B2 (en) | 2008-11-06 | 2013-04-03 | 株式会社東芝 | Spin torque oscillator, magnetic recording head, magnetic head assembly, and magnetic recording apparatus |
-
2010
- 2010-12-06 US US12/928,194 patent/US8203389B1/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6721141B1 (en) * | 1998-07-10 | 2004-04-13 | Interuniversitair Microelektronica Centrum (Imecvzw) | Spin-valve structure and method for making spin-valve structures |
US7961439B2 (en) * | 2003-06-30 | 2011-06-14 | Kabushiki Kaisha Toshiba | High-frequency oscillation element, magnetic information recording head, and magnetic storage device |
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