US20110180882A1 - Semiconductor Device and Method of Fabricating the Same - Google Patents

Semiconductor Device and Method of Fabricating the Same Download PDF

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US20110180882A1
US20110180882A1 US13/082,198 US201113082198A US2011180882A1 US 20110180882 A1 US20110180882 A1 US 20110180882A1 US 201113082198 A US201113082198 A US 201113082198A US 2011180882 A1 US2011180882 A1 US 2011180882A1
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film
insulating film
gate electrodes
semiconductor elements
semiconductor
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Hideki Inokuma
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor device and a method of fabricating the same.
  • a Material having high stress as an insulating film covering source/drain regions and gate electrodes, and deposit this insulating film as a thicker layer.
  • Jpn. Pat. Appln. KOKAI Publication No. 2003-273240 describes steps of forming insulating films having different stresses in an nMOSFET and pMOSFET.
  • a semiconductor device comprising: a first semiconductor element formed on a semiconductor substrate and using electrons as carriers, and a second semiconductor element formed on the semiconductor substrate and using holes as carriers; a first insulating film and a second insulating film formed on source/drain regions and gate electrodes of the first semiconductor element and the second semiconductor element, the first insulating film having tensile stress with respect to the first semiconductor element, and the second insulating film having compression stress with respect to the second semiconductor element; and sidewall spacers of the gate electrodes of the first semiconductor element and the second semiconductor element, at least portions of the sidewall spacers being removed, wherein at least one of the first insulating film and the second insulating film does not close a spacing between the gate electrodes of the first semiconductor element and the second semiconductor element.
  • a semiconductor device fabrication method comprising: forming, on a semiconductor substrate, a first semiconductor element using electrons as carriers, and a second semiconductor element using holes as carriers; forming sidewall spacers of gate electrodes of the first semiconductor element and the second semiconductor element; removing at least portions of the sidewall spacers of the gate electrodes of the first semiconductor element and the second semiconductor element; depositing a first insulating film having one of tensile stress and compression stress on source/drain regions and the gate electrodes of the first semiconductor element and the second semiconductor element, the first insulating film not closing a spacing between the gate electrodes of the first semiconductor element and the second semiconductor element; depositing a second insulating film on the first insulating film; removing the first insulating and the second insulating film deposited on one of the first semiconductor element and the second semiconductor element; depositing a third insulating film having the other one of tensile stress and compression stress on the source/drain regions and the gate electrodes of the first semiconductor element
  • FIG. 1 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 2 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 3 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 4 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 5 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 6 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 7 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 8 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 9 is a sectional view showing a semiconductor device fabrication step according to the first embodiment.
  • FIG. 10 is a sectional view showing a semiconductor device fabrication step according to the first embodiment
  • FIG. 11 is a sectional view showing a semiconductor device fabrication step according to the second embodiment.
  • FIG. 12 is a sectional view showing a semiconductor device fabrication step according to the second embodiment
  • FIG. 13 is a sectional view showing a semiconductor device fabrication step according to the third embodiment.
  • FIG. 14 is a sectional view showing a semiconductor device fabrication step according to the third embodiment.
  • FIG. 15 is a sectional view showing a semiconductor device fabrication step according to the third embodiment.
  • FIG. 16 is a sectional view showing a semiconductor device fabrication step according to the third embodiment.
  • FIG. 17 is a sectional view showing a semiconductor device fabrication step according to the third embodiment.
  • FIG. 18 is a sectional view showing a semiconductor device fabrication step according to the third embodiment.
  • the current drivability improves when a film having tensile stress and a film having compression stress are respectively used in a transistor (nMOS) in which electrons are carriers and a transistor (pMOS) in which holes are carriers, as an insulating film covering source/drain regions and gate electrodes.
  • nMOS transistor
  • pMOS transistor
  • the embodiments avoid the above-mentioned problems arising when forming different insulating films in nMOS and pMOS transistors in order to improve the current drivability of both the nMOS and pMOS transistors.
  • FIGS. 1 to 10 are sectional views showing semiconductor device fabrication steps according to the first embodiment. The semiconductor device fabrication steps according to the first embodiment will be explained below with reference to FIGS. 1 to 10 .
  • an element isolation region 102 is formed in an Si substrate (bulk Si substrate, SiGe substrate, or SOI substrate) by burying an insulating film in a trench about 300 nm deep, and an impurity serving as a well and channel is doped. After that, a gate insulating film 103 about 1 nm thick is deposited on the Si substrate 101 , and a gate electrode film 104 about 100 nm thick is deposited on the entire surface.
  • the gate insulating film 103 is used as a stopper to process the gate electrode film 104 by lithography and dry etching, and an impurity serving as source/drain extensions is doped by ion implantation.
  • first SiO 2 films 105 are formed to separate a source and drain by about 30 nm.
  • first SiN films 106 deposit first SiN films 106 whose film thickness is adjusted to obtain a desired sidewall width, process the first SiN films 106 by using the first SiO 2 films 105 as stoppers, and remove the remaining first SiO 2 films 105 .
  • an impurity serving as a source and drain are doped and activated, and a metal 107 such as Ti, Co, or Ni is deposited and alloyed in order to decrease the interconnection resistance of source/drain regions and gate electrodes.
  • a barrier film serving as an etching stopper in later contact formation is deposited.
  • a film having tensile stress and a film having compression stress are respectively used as the barrier films in a transistor (nMOS) in which electrons are carriers and a transistor (pMOS) in which holes are carriers, the current drivability of both transistors can increase.
  • the first SiN films 106 processed as sidewall spacers are entirely or partially removed by wet or dry etching.
  • a second SiN film 108 having tensile stress is deposited to have a film thickness that does not close a narrow spacing between the gate electrodes (letting W be this film thickness, 2 ⁇ (W+thickness X of stopper film [SiO 2 film 105 ]) ⁇ space Y between gate electrodes [GC]), and a second SiO 2 film 109 about 20 nm thick is deposited.
  • a first resist 110 is deposited and patterned to expose only the pMOS region by lithography.
  • the first resist 110 is used as a mask to remove the second SiO 2 film 109 .
  • the second SiN film 108 is partially or entirely removed while maintaining the second SiO 2 film 109 in the nMOS region and the first SiO 2 films 105 as stoppers in the pMOS region.
  • a second resist 112 is deposited and patterned to expose only the nMOS region by lithography, and the third SiN film 111 on the nMOS is removed by using the second SiO 2 film 109 as a stopper.
  • the second resist 112 is removed, a third SiO 2 film 113 is deposited and planarized by CMP, and a semiconductor device is completed by forming contact holes, an interlayer dielectric film 117 , and a metal interconnection 118 .
  • each of the second SiN film 108 having tensile stress and the third SiN film 111 having compression stress is made of a silicon oxide film, silicon nitride film, silicon oxynitride film, hafnium oxide film, aluminum oxide film, aluminum nitride film, tantalum oxide film, or titanium oxide film.
  • the film thickness is 10 to 200 nm, the film has sufficient stress to increase the driving current of the transistor.
  • FIGS. 11 and 12 are sectional views showing semiconductor device fabrication steps according to the second embodiment. The semiconductor device fabrication steps of the second embodiment will be explained below with reference to FIGS. 11 and 12 .
  • steps up to FIG. 9 are performed in the same manner as in the first embodiment. That is, an alloy layer 107 is formed on source/drain regions and gate electrodes, first SiN films 106 processed as sidewall spacers are removed, a second SiN film 108 and second SiO 2 film 109 are deposited, the second SiN film 108 and second SiO 2 film 109 in a pMOS region are removed by lithography and dry etching, a third SiN film 111 and second resist 112 are deposited, and the third SiN film iii deposited in an nMOS region is removed by using the second resist 112 .
  • the second SiO 2 film 109 is removed by using the second resist 112 as a mask and the second SiN film 108 as a stopper.
  • the second resist 112 is removed, a third SiO 2 film 113 is deposited and planarized by CMP, and a semiconductor device is completed by forming contact holes, an interlayer dielectric film 117 , and a metal interconnection 118 .
  • FIGS. 13 to 18 are sectional views showing semiconductor device fabrication steps according to the third embodiment.
  • the semiconductor device fabrication steps of the third embodiment will be explained below with reference to FIGS. 13 to 18 .
  • FIGS. 1 to 3 are performed to form an alloy layer on source/drain regions and gate electrodes as shown in FIG. 13 .
  • first SiN films 106 processed as sidewall spacers are removed by wet or dry etching.
  • a second SiN film 108 having tensile stress is deposited to have a film thickness that does not close a narrow spacing between the gate electrodes, and a second SiO 2 film 109 about 20 nm is deposited.
  • a first resist 110 is deposited and patterned to expose only a pMOS region by lithography.
  • the second SiO 2 film 109 is removed by using the first resist 110 as a mask.
  • the second SiN film 108 in the pMOS region is partially removed and processed into sidewall spacers of the gate electrodes while maintaining the second SiO 2 film 109 in an nMOS region and first SiO 2 films 105 as stoppers in the pMOS region.
  • a third SiN film 111 having compression stress is formed and processed.
  • a third SiO 2 film 113 is deposited and planarized by CMP, and a semiconductor device is completed by forming contact holes, an interlayer dielectric film 117 , and a metal interconnection 118 .
  • partially or entirely removing the sidewall spacers make it possible to avoid the insulating film covering the alloy layer formed on the source/drain regions and gate electrodes from closing the narrow spacing between the gate electrodes while maintaining the film thickness of the insulating film.
  • the insulating film can be readily removed because it is formed so as not to close the narrow spacing between the gate electrodes. This makes the formation of nMOS and pMOS transistors having improved current drivability feasible. Accordingly, the initially deposited insulating film can be removed without causing etching damage to extension portions. This facilitates the formation of different insulating films having different stresses in the nMOS and pMOS transistors.
  • the stress can be increased not only by partially or entirely removing the sidewall, spacers, but also by preventing the insulating film from closing the narrow spacing between the gate electrodes.
  • the embodiments can provide a semiconductor device capable of applying sufficient stress to the channel portion of a transistor, and a method of fabricating the same.

Abstract

According to an aspect of the invention, there is provided a semiconductor device including a first semiconductor element formed on a semiconductor substrate and using electrons as carriers, and a second semiconductor element formed on the semiconductor substrate and using holes as carriers, a first insulating film and a second insulating film formed on source/drain regions and gate electrodes of the first element and the second element, the first insulating film having tensile stress with respect to the first element, and the second insulating film having compression stress with respect to the second element, and sidewall spacers of the gate electrodes of the first element and the second element, at least portions of the sidewall spacers being removed, wherein at least one of the first insulating film and the second insulating film does not close a spacing between the gate electrodes of the first element and the second element.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2006-269333, filed Sep. 29, 2006, the entire contents of which are incorporated herein by reference.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a semiconductor device and a method of fabricating the same.
  • 2. Description of the Related Art
  • To increase the driving current of a transistor in a semiconductor device, it is desirable to use a Material having high stress as an insulating film covering source/drain regions and gate electrodes, and deposit this insulating film as a thicker layer.
  • If a narrow spacing between the gate electrodes is closed by increasing the thickness of this insulating film, however, it becomes difficult to maintain films formed as sidewall spacers of the gate electrodes, since the thickness of the gate electrode film is added to an effective film thickness to be removed when forming different insulating films in nMOS and pMOS transistors. In addition, if films formed as stoppers of the sidewall spacer films are also removed, etching damage enters source/drain extension regions as well, and this degrades the junction leakage characteristic.
  • If a thin film that does not close the narrow spacing between the gate electrodes is formed as the insulating film in order to avoid the above problem, insufficient stress is applied to the channel portion of the transistor, so the desired driving current cannot be obtained.
  • Note that Jpn. Pat. Appln. KOKAI Publication No. 2003-273240 describes steps of forming insulating films having different stresses in an nMOSFET and pMOSFET.
    • BRIEF SUMMARY OF THE INVENTION
  • According to an aspect of the invention, there is provided a semiconductor device comprising: a first semiconductor element formed on a semiconductor substrate and using electrons as carriers, and a second semiconductor element formed on the semiconductor substrate and using holes as carriers; a first insulating film and a second insulating film formed on source/drain regions and gate electrodes of the first semiconductor element and the second semiconductor element, the first insulating film having tensile stress with respect to the first semiconductor element, and the second insulating film having compression stress with respect to the second semiconductor element; and sidewall spacers of the gate electrodes of the first semiconductor element and the second semiconductor element, at least portions of the sidewall spacers being removed, wherein at least one of the first insulating film and the second insulating film does not close a spacing between the gate electrodes of the first semiconductor element and the second semiconductor element.
  • According to another aspect of the invention, there is provided a semiconductor device fabrication method comprising: forming, on a semiconductor substrate, a first semiconductor element using electrons as carriers, and a second semiconductor element using holes as carriers; forming sidewall spacers of gate electrodes of the first semiconductor element and the second semiconductor element; removing at least portions of the sidewall spacers of the gate electrodes of the first semiconductor element and the second semiconductor element; depositing a first insulating film having one of tensile stress and compression stress on source/drain regions and the gate electrodes of the first semiconductor element and the second semiconductor element, the first insulating film not closing a spacing between the gate electrodes of the first semiconductor element and the second semiconductor element; depositing a second insulating film on the first insulating film; removing the first insulating and the second insulating film deposited on one of the first semiconductor element and the second semiconductor element; depositing a third insulating film having the other one of tensile stress and compression stress on the source/drain regions and the gate electrodes of the first semiconductor element and the second semiconductor element; and removing the third insulating film deposited on the other one of the first semiconductor element and the second semiconductor element.
    • BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
  • FIG. 1 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 2 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 3 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 4 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 5 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 6 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 7 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 8 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 9 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 10 is a sectional view showing a semiconductor device fabrication step according to the first embodiment;
  • FIG. 11 is a sectional view showing a semiconductor device fabrication step according to the second embodiment;
  • FIG. 12 is a sectional view showing a semiconductor device fabrication step according to the second embodiment;
  • FIG. 13 is a sectional view showing a semiconductor device fabrication step according to the third embodiment;
  • FIG. 14 is a sectional view showing a semiconductor device fabrication step according to the third embodiment;
  • FIG. 15 is a sectional view showing a semiconductor device fabrication step according to the third embodiment;
  • FIG. 16 is a sectional view showing a semiconductor device fabrication step according to the third embodiment;
  • FIG. 17 is a sectional view showing a semiconductor device fabrication step according to the third embodiment; and
  • FIG. 18 is a sectional view showing a semiconductor device fabrication step according to the third embodiment.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • Embodiments will be explained below with reference to the accompanying drawing.
  • In a semiconductor device comprising an active element such as a MOSFET, the current drivability improves when a film having tensile stress and a film having compression stress are respectively used in a transistor (nMOS) in which electrons are carriers and a transistor (pMOS) in which holes are carriers, as an insulating film covering source/drain regions and gate electrodes. The embodiments avoid the above-mentioned problems arising when forming different insulating films in nMOS and pMOS transistors in order to improve the current drivability of both the nMOS and pMOS transistors.
  • FIGS. 1 to 10 are sectional views showing semiconductor device fabrication steps according to the first embodiment. The semiconductor device fabrication steps according to the first embodiment will be explained below with reference to FIGS. 1 to 10.
  • First, as shown in FIG. 1, an element isolation region 102 is formed in an Si substrate (bulk Si substrate, SiGe substrate, or SOI substrate) by burying an insulating film in a trench about 300 nm deep, and an impurity serving as a well and channel is doped. After that, a gate insulating film 103 about 1 nm thick is deposited on the Si substrate 101, and a gate electrode film 104 about 100 nm thick is deposited on the entire surface.
  • Then, as shown in FIG. 2, the gate insulating film 103 is used as a stopper to process the gate electrode film 104 by lithography and dry etching, and an impurity serving as source/drain extensions is doped by ion implantation.
  • In addition, to ensure the transistor characteristics and reliability, sidewall spacers are formed to separate a source and drain by about 30 nm. To avoid etching damage from entering the Si substrate 101 during this sidewall spacer processing, as shown in FIG. 3, it is possible to form thin L-shaped first SiO2 films 105 on the gate electrode film 104, deposit first SiN films 106 whose film thickness is adjusted to obtain a desired sidewall width, process the first SiN films 106 by using the first SiO2 films 105 as stoppers, and remove the remaining first SiO2 films 105.
  • After the sidewall spacers are processed, as shown in FIG. 4, an impurity serving as a source and drain are doped and activated, and a metal 107 such as Ti, Co, or Ni is deposited and alloyed in order to decrease the interconnection resistance of source/drain regions and gate electrodes.
  • After this alloying, a barrier film serving as an etching stopper in later contact formation is deposited. When a film having tensile stress and a film having compression stress are respectively used as the barrier films in a transistor (nMOS) in which electrons are carriers and a transistor (pMOS) in which holes are carriers, the current drivability of both transistors can increase.
  • In this state, as shown in FIG. 5, the first SiN films 106 processed as sidewall spacers are entirely or partially removed by wet or dry etching.
  • After that, as shown in FIG. 6, a second SiN film 108 having tensile stress is deposited to have a film thickness that does not close a narrow spacing between the gate electrodes (letting W be this film thickness, 2×(W+thickness X of stopper film [SiO2 film 105])<space Y between gate electrodes [GC]), and a second SiO2 film 109 about 20 nm thick is deposited. Subsequently, as shown in FIG. 7, a first resist 110 is deposited and patterned to expose only the pMOS region by lithography.
  • After the pMOS region is exposed by lithography, the first resist 110 is used as a mask to remove the second SiO2 film 109.
  • In addition, as shown in FIG. 8, after the first resist 110 is removed, the second SiN film 108 is partially or entirely removed while maintaining the second SiO2 film 109 in the nMOS region and the first SiO2 films 105 as stoppers in the pMOS region.
  • As shown in FIG. 9, after a third SiN film 111 having compression stress is formed, a second resist 112 is deposited and patterned to expose only the nMOS region by lithography, and the third SiN film 111 on the nMOS is removed by using the second SiO2 film 109 as a stopper.
  • After that, as shown in FIG. 10, the second resist 112 is removed, a third SiO2 film 113 is deposited and planarized by CMP, and a semiconductor device is completed by forming contact holes, an interlayer dielectric film 117, and a metal interconnection 118.
  • Note that each of the second SiN film 108 having tensile stress and the third SiN film 111 having compression stress is made of a silicon oxide film, silicon nitride film, silicon oxynitride film, hafnium oxide film, aluminum oxide film, aluminum nitride film, tantalum oxide film, or titanium oxide film. When the film thickness is 10 to 200 nm, the film has sufficient stress to increase the driving current of the transistor.
  • FIGS. 11 and 12 are sectional views showing semiconductor device fabrication steps according to the second embodiment. The semiconductor device fabrication steps of the second embodiment will be explained below with reference to FIGS. 11 and 12.
  • First, steps up to FIG. 9 are performed in the same manner as in the first embodiment. That is, an alloy layer 107 is formed on source/drain regions and gate electrodes, first SiN films 106 processed as sidewall spacers are removed, a second SiN film 108 and second SiO2 film 109 are deposited, the second SiN film 108 and second SiO2 film 109 in a pMOS region are removed by lithography and dry etching, a third SiN film 111 and second resist 112 are deposited, and the third SiN film iii deposited in an nMOS region is removed by using the second resist 112.
  • In addition, as shown in FIG. 11, the second SiO2 film 109 is removed by using the second resist 112 as a mask and the second SiN film 108 as a stopper.
  • After that, as shown in FIG. 12, the second resist 112 is removed, a third SiO2 film 113 is deposited and planarized by CMP, and a semiconductor device is completed by forming contact holes, an interlayer dielectric film 117, and a metal interconnection 118.
  • FIGS. 13 to 18 are sectional views showing semiconductor device fabrication steps according to the third embodiment. The semiconductor device fabrication steps of the third embodiment will be explained below with reference to FIGS. 13 to 18.
  • First, the steps shown in FIGS. 1 to 3 are performed to form an alloy layer on source/drain regions and gate electrodes as shown in FIG. 13.
  • In this state, as shown in FIG. 14, first SiN films 106 processed as sidewall spacers are removed by wet or dry etching.
  • After that, as shown in FIG. 15, a second SiN film 108 having tensile stress is deposited to have a film thickness that does not close a narrow spacing between the gate electrodes, and a second SiO2 film 109 about 20 nm is deposited. Subsequently, as shown in FIG. 16, a first resist 110 is deposited and patterned to expose only a pMOS region by lithography.
  • As in the first embodiment, after the pMOS region is exposed by lithography, the second SiO2 film 109 is removed by using the first resist 110 as a mask.
  • Furthermore, as shown in FIG. 17, after the first resist 110 is removed, the second SiN film 108 in the pMOS region is partially removed and processed into sidewall spacers of the gate electrodes while maintaining the second SiO2 film 109 in an nMOS region and first SiO2 films 105 as stoppers in the pMOS region.
  • After that, as shown in FIG. 18, a third SiN film 111 having compression stress is formed and processed. Finally, a third SiO2 film 113 is deposited and planarized by CMP, and a semiconductor device is completed by forming contact holes, an interlayer dielectric film 117, and a metal interconnection 118.
  • In the first to third embodiments described above, partially or entirely removing the sidewall spacers make it possible to avoid the insulating film covering the alloy layer formed on the source/drain regions and gate electrodes from closing the narrow spacing between the gate electrodes while maintaining the film thickness of the insulating film. Also, the insulating film can be readily removed because it is formed so as not to close the narrow spacing between the gate electrodes. This makes the formation of nMOS and pMOS transistors having improved current drivability feasible. Accordingly, the initially deposited insulating film can be removed without causing etching damage to extension portions. This facilitates the formation of different insulating films having different stresses in the nMOS and pMOS transistors. Furthermore, since the insulating film having stress is formed close to the channel portion of the transistor, the stress efficiently acts on the transistor, so the current drivability of the transistor can further improve. Accordingly, the stress can be increased not only by partially or entirely removing the sidewall, spacers, but also by preventing the insulating film from closing the narrow spacing between the gate electrodes.
  • The embodiments can provide a semiconductor device capable of applying sufficient stress to the channel portion of a transistor, and a method of fabricating the same.
  • Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

Claims (7)

1. A semiconductor device comprising:
a plurality of first semiconductor elements formed on a semiconductor substrate side by side and using electrons as carriers, and a plurality of second semiconductor elements formed on the semiconductor substrate side by side and using holes as carriers;
a first insulating film and a second insulating film formed on source/drain regions and gate electrodes of the first semiconductor elements and the second semiconductor elements, respectively, the first insulating film having tensile stress with respect to the first semiconductor elements, and the second insulating film having compression stress with respect to the second semiconductor elements; and
sidewall spacers of the gate electrodes of the first semiconductor elements and the second semiconductor elements,
wherein at least one of the first insulating film and the second insulating film does not close a spacing between the gate electrodes of the first semiconductor elements and a spacing between the second semiconductor elements.
2. The device according to claim 1, wherein one of the first insulating film and the second insulating film provided in a form of sidewall spacers of the gate electrode of one of the first semiconductor elements and the second semiconductor elements.
3. The device according to claim 1, wherein film thicknesses of the first insulating film and the second insulating film are 10 to 200 nm.
4. The device according to claim 1, wherein each of the first insulating film and the second insulating film is one film selected from the group consisting of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a hafnium oxide film, an aluminum oxide film, an aluminum nitride film, a tantalum oxide film, and a titanium oxide film.
5. The device according to claim 1, further comprising dielectric films selectively formed on the semiconductor substrate and connected to undermost portions of the sidewall spacers of the gate electrodes to sandwich the gate electrodes.
6. The device according to claim 5, wherein a film thickness W of the first insulating film, a film thickness X of the stopper film, and a space Y between the gate electrodes satisfy an equation, 2×(W+X)<Y.
7.-13. (canceled)
US13/082,198 2006-09-29 2011-04-07 Semiconductor Device and Method of Fabricating the Same Abandoned US20110180882A1 (en)

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