Connect public, paid and private patent data with Google Patents Public Datasets

Semiconductor device, manufacturing method thereof, and electronic device

Download PDF

Info

Publication number
US20110175090A1
US20110175090A1 US13072910 US201113072910A US2011175090A1 US 20110175090 A1 US20110175090 A1 US 20110175090A1 US 13072910 US13072910 US 13072910 US 201113072910 A US201113072910 A US 201113072910A US 2011175090 A1 US2011175090 A1 US 2011175090A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
layer
semiconductor
insulating
fig
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13072910
Inventor
Toshinori Sugihara
Hideo Ohno
Masashi Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Masashi Kawasaki
Hideo Ohno
Original Assignee
Sharp Corp
Masashi Kawasaki
Hideo Ohno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66969Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials

Abstract

In a thin film transistor, a gate insulating layer is formed on a gate electrode formed on an insulating substrate. Formed on the gate insulating layer is a semiconductor layer. Formed on the semiconductor layer are a source electrode and a drain electrode. A protective layer covers them, so that the semiconductor layer is blocked from an atmosphere. The semiconductor layer (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.

Description

    CROSS-REFERENCES TO RELATED APPLICATIONS
  • [0001]
    This application is a divisional of U.S. Ser. No. 10/560,907, filed Dec. 16, 2005, which is the U.S. national phase of international application PCT/JP2004/008322 filed Jun. 14, 2004, which designated the U.S. and claims priority to JP 2003-177272 filed Jun. 20, 2003, and JP 2004-079273 filed Mar. 18, 2004, the entire contents of each of which are hereby incorporated by reference.
  • TECHNICAL FIELD
  • [0002]
    The present invention relates to a semiconductor device having an active layer made of a zinc oxide. The present invention particularly relates to (i) a semiconductor device suitable for a switching element for use in an electronic device, and (ii) an electronic device using the semiconductor device.
  • BACKGROUND ART
  • [0003]
    Conventionally, zinc oxide (ZnO) is transparent in a visible light region, and is a semiconductor having a relatively good property even when prepared under a low temperature. For this reason, study on ZnO has been actively carried out in recent years, so that various techniques have been reported.
  • [0004]
    For example, see Documents 1 through 3 of scientific papers. Each of the scientific papers teaches that a thin film transistor having an active layer made of ZnO operates with high performance.
  • [0005]
    (1) Document 1:
  • [0006]
    R. L. Hoffman, B. J. Norris and J. F. Wager, “ZnO-based transparent thin-film transistors” APPLIED PHYSICS LETTERS VOLUME 82, NUMBER 5, 3 February 2003, pp 733-735
  • [0007]
    (2) Document 2:
  • [0008]
    P. F. Carcia, R. S. McLean, M. H. Reilly and G. Nunes, Jr. “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering” APPLIED PHYSICS LETTERS VOLUME 82, NUMBER 7, 17 February 2003, pp 1117-1119
  • [0009]
    (3) Document 3:
  • [0010]
    Junya NISHII et al., “High Performance Thin Film Transistors with Transparent ZnO Channels” Jpn. J. Appl. Phys. Vol. 42. (2003) pp L347-L349, Part 2, No. 4A, 1 Apr. 2003
  • [0011]
    Further, see Documents 4 through 6 of patent applications. Each of Documents 4 through 6 discloses a technique of using ZnO as a semiconductor.
  • [0012]
    (4) Document 4:
  • [0013]
    Japanese Unexamined Patent Publication Tokukai 2000-150900 (published on May 30, 2000)
  • [0014]
    (5) Document 5:
  • [0015]
    Japanese Unexamined Patent Publication Tokukai 2000-277534 (published on Oct. 6, 2000)
  • [0016]
    (6) Document 6
  • [0017]
    Japanese Unexamined Patent Publication Tokukai 2002-76356 (published on Mar. 15, 2002)
  • [0018]
    (7) Document 7
  • [0019]
    Japanese Unexamined Patent Publication Tokukaisho 63-101740 (published on May 6, 1988)
  • [0020]
    Described in Document 4 is that a transistor becomes transparent by using a transparent semiconductor such as zinc oxide for a channel layer of the transistor, and by using a transparent insulating oxide for a gate insulating layer.
  • [0021]
    Described in Document 5 is that: lattice mismatch between zinc oxide and a priming film is eliminated by selecting a material of the priming film, with the result that a semiconductor device including a thin film transistor using zinc oxide can have high performance.
  • [0022]
    Described in Document 6 is a method for doping a 3d transition metal in zinc oxide for the purpose of improving an ON/OFF ratio property and a mobility property of a transistor having a transparent channel layer made of zinc oxide or the like.
  • [0023]
    Each of the scientific papers and the documents teaches effectiveness of the transistor using zinc oxide.
  • [0024]
    However, zinc oxide is highly sensitive to an atmosphere, so that a property of the device using zinc oxide is greatly changed due to the atmosphere, as disclosed in Document 7. Therefore, a layer of zinc oxide needs to be blocked from the atmosphere by a protective layer (insulator) such that the device is put into practical use. Document 4 describes that a vertical type electric field effect transistor having the channel layer made of zinc oxide is used as a gas sensor.
  • [0025]
    No protective layer is provided in each structure of Documents 1, 2, and 3. Moreover, none of Documents 1, 2, and 3 describe an influence rendered by providing the protective layer. Meanwhile, each of Documents 4, 5, and 6 describes an example of a structure of blocking the zinc oxide layer from the atmosphere; however, none of Documents 4, 5, and 6 describe the influence rendered by providing the protective layer. Here, the aforementioned gate insulating layer corresponds to the protective layer.
  • [0026]
    For the practical use, the transistor having the active layer made of zinc oxide is required to have a stable property. An indispensable condition for attaining such a stable property is to block, from the atmosphere, the layer of zinc oxide highly sensitive to the atmosphere. For this reason, the influence rendered by providing the protective layer needs to be discussed. The following explains this.
  • [0027]
    FIG. 14( a) illustrates a transistor 50 having no protective layer. The transistor 50 has an inverse stagger structure. Specifically, a gate electrode 53 made of Ta is formed on a glass substrate 52. On the glass substrate 52 and the gate electrode 53, a gate insulating layer 54 made of Al2O3 is formed. Formed on the gate insulating layer 54 is a semiconductor layer 55 made of zinc oxide which has not been subjected to doping intentionally. Formed on the semiconductor layer 55 and the gate insulating layer 54 are a source electrode 56 and a drain electrode 57, each of which is made of Al.
  • [0028]
    FIG. 14( b) illustrates a transistor 51 provided with a protective layer. The transistor 51 has a structure similar to the transistor 50, except that a protective layer 58 made of Al2O3 is so provided as to cover a part of the semiconductor layer 55, a part of the source electrode 56, and a part of the drain electrode 57.
  • [0029]
    FIG. 15 illustrates the difference between (i) the Id−Vg property of the electric field effect transistor which has the active layer (semiconductor layer 55) made of zinc oxide and which has the protective layer, and (ii) the Id−Vg property of the electric field effect transistor which has the active layer (semiconductor layer 55) made of zinc oxide and which has no protective layer.
  • [0030]
    As shown in FIG. 15, the transistor having the protective layer has a threshold voltage greatly different from that of the transistor having no protective layer. Specifically, the threshold voltage of the transistor having the protective layer is greatly shifted to the negative side, as compared with that of the transistor having no protective layer. Such a greatly negative threshold voltage makes it impossible that the transistor is put into practical use.
  • [0031]
    The following explains why such a phenomenon occurs. That is, zinc oxide is intrinsically likely to have an oxygen hole from which free electrons are generated, so that zinc oxide is a semiconductor having the n-type conductivity. However, when the surface level of the zinc oxide layer decreases the fermi level of the surface of the zinc oxide layer, a depletion layer spreads inside the zinc oxide layer to reach the interface of the gate insulating layer serving as a channel layer, with the result that the free electrons are removed. This causes the zinc oxide layer to have a high resistance. Therefore, such a zinc oxide layer having high resistance has a small number of free electrons that are movable charges, with the result that a small gate voltage is required for removal of the free electrons. Accordingly, the absolute value of the threshold voltage becomes small. This is true when no protective layer is provided.
  • [0032]
    In the meanwhile, the surface level of the zinc oxide layer is decreased by covering the zinc oxide layer with the protective layer made of Al2O3. This can be understood based on the report of 29p-F-8 (2003/3) of Japan Society of Applied Physics 50 th meeting. Specifically, it is reported that: zinc oxide and Al2O3 match well with each other, so that a defect level is small. Such reduction of the surface level causes the fermi level of the surface of the zinc oxide layer to be restored to a position determined by the density of the free electrons intrinsically included in zinc oxide. Accordingly, no depletion layer spreads inside the zinc oxide layer. With this, the zinc oxide layer is caused to have the intrinsic n-type conductivity, with the result that the zinc oxide layer has a low resistance. Therefore, a large number of free electrons exist in such a zinc oxide layer. Required for removal of such a large number of free electrons is a great negative gate voltage. Accordingly, the threshold voltage is greatly negative.
  • [0033]
    FIG. 16 illustrates the difference between (i) the resistivity of the zinc oxide layer in cases where the protective layer made of Al2O3 is provided, and (ii) the resistivity of the zinc oxide layer in cases where no protective layer is provided. As shown in FIG. 16, the resistivity of the zinc oxide layer is reduced to approximately 1/6400 by providing the protective layer. This is an evidence of the aforementioned workings.
  • [0034]
    This is the first time to find and discuss that the property of the electric field effect transistor using zinc oxide for the active layer is greatly changed by providing the protective layer as described above.
  • [0035]
    Zinc oxide is sensitive to the atmosphere, so that the protective layer is imperative for the electric field effect transistor using zinc oxide for the active layer. However, as described above, the electric field effect transistor having the protective layer has the greatly negative threshold voltage. For this reason, such an electric field effect transistor cannot be put into practical use.
  • [0036]
    The present invention is made in light of the problem, and its object is to provide (i) a semiconductor device which use zinc oxide for an active layer, and which has a protective layer for blocking the active layer from an atmosphere, and which can be put into practical use; and (ii) an electronic device including the semiconductor device.
  • DISCLOSURE OF INVENTION
  • [0037]
    A semiconductor device of the present invention include: (1) an active layer, to which group I elements, group III elements, group IV elements, group V elements, or group VII elements are added, and which is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZn1-xO, (ii) amorphous ZnO or amorphous MgxZn1-xO, or (iii) either (a) mixture of the polycrystalline ZnO and the amorphous ZnO or (b) mixture of the polycrystalline MgxZn1-xO and the amorphous MgxZn1-xO; and (2) a blocking member for blocking the active layer from an atmosphere such that the atmosphere never influences a region, in which a movable charge moves, of the active layer.
  • [0038]
    In the structure above, the blocking member may include not only a protective layer and an insulating layer but also an electrode and the like, as long as the active layer is blocked from the atmosphere. Further, the active layer may be wholly blocked by the blocking member. However, a part of the active layer may not be blocked by the blocking member, i.e., may be exposed to the atmosphere, as long as the active layer is blocked such that at least the region, in which the movable electric charges move, of the active layer is not influenced by the atmosphere. A specific example of such a region is the channel portion of a thin film transistor.
  • [0039]
    An element property of the semiconductor device can be stabilized by blocking, from the atmosphere in this way, the active layer made of the ZnO or the MgxZn1-xO each sensitive to the atmosphere. Further, the addition of the group I elements, the group III elements, the group IV elements, the group V elements, or the group VII elements to the active layer makes it possible to reduce the movable charges which are generated as the result of providing the blocking member such as the protective layer. This is explained as follows. That is, the formation of the protective layer or the like causes decrease of the surface level of the layer of, e.g., the ZnO, with the result that a depletion layer spread within the ZnO layer is eliminated. With this, the ZnO layer becomes an n-type semiconductor, with the result that too many free electrons are generated. However, for example, nitrogen of the group V elements works as an acceptor impurity with respect to the ZnO layer, so that the free electrons are reduced by adding nitrogen. Further, hydrogen of the group I elements works as a terminator with respect to the dangling bond attributing to the generation of the free electrons, while hydrogen is in ZnO. Therefore, the hydrogen addition also allows reduction of the free electrons. Such reduction of the free electrons allows decrease of the fermi level to the vicinity of the center of the band gap. This allows decrease of a gate voltage required for removal of such too many free electrons, with the result that the threshold voltage of the semiconductor device is increased. As such, the threshold voltage, which is one of important properties of a transistor, can be so controlled as to be a voltage allowing for practical use of the semiconductor device.
  • [0040]
    It is preferable to arrange the semiconductor device such that each of the elements corresponds to nitrogen, phosphorus, arsenic, or stibium; or the elements correspond to not less than two of nitrogen, phosphorus, arsenic, and stibium. The addition of these elements makes it possible that the threshold voltage can be precisely controlled depending on an addition amount such that the threshold voltage falls within a relatively large range.
  • [0041]
    It is preferable to arrange the semiconductor device such that: the elements corresponds to (i) hydrogen and (ii) nitrogen, phosphorus, arsenic, stibium, or not less than two of nitrogen, phosphorus, arsenic, and stibium. The addition of these elements makes it possible to control the threshold voltage of the semiconductor device depending on the addition amount such that the threshold voltage falls within a relatively large range. Further, in the manufacturing of the semiconductor device, the active layer is formed under an atmosphere containing (i) one or more of nitrogen, dinitrogen monoxide, nitrogen monoxide, and nitrogen dioxide, and (ii) one or more of water vapor, hydrogen peroxide, and ammonia. With this, nitrogen and hydrogen are added to the active layer to be formed.
  • [0042]
    It is preferable to arrange the semiconductor device such that the blocking member is made up of different blocking layers. As described above, the blocking member may be made up of a plurality of blocking layers as long as the active layer can be blocked from the atmosphere by such a blocking member. Therefore, such a blocking member made up of the blocking layers makes it possible to easily apply the present invention to a thin film transistor etc., including an insulating layer, an electrode, an protective layer, and the like, which respectively serve as the blocking layers.
  • [0043]
    It is preferable to arrange the semiconductor device such that: at least one of the blocking layers is made of SiO2, Al2O3, AN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, a mixed crystal of LiGaO2 such as (Li1(x+y)NaxKy)(Ga1-zAlz)O2, or a solid solution containing at least two of them. Each of the materials matches well with the ZnO and the MgxZn1-xO, so that the material is suitable for a blocking layer directly meeting the active layer.
  • [0044]
    It is preferable to arrange the semiconductor device such that: a blocking layer constituting the blocking layers is made of SiO2, Al2O3, AN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2, or a solid solution at least two of them, and the blocking layer is so provided as to meet the active layer separately from (i) each of two electrodes serving as blocking layers and connected to the active layer, and (ii) an insulating layer, which serves as a blocking layer and meets the active layer, for insulating the active layer from a control electrode for controlling move of a movable electric charge in the active layer. The two electrodes connected to the active layer correspond to, e.g., a source electrode and a drain electrode of a thin film transistor, respectively. Moreover, the control electrode corresponds to a gate electrode thereof. In an inverse-staggered thin film transistor, a gate electrode is formed on a substrate. Formed on the gate electrode is a gate insulating layer (blocking layer). On the gate insulating layer, the active layer is formed. The blocking layer meeting the active layer separately from the gate insulating layer is such a blocking layer (corresponding to the protective layer 8 shown in FIG. 1( a) through FIG. 1( c)) that meets (i) the upper end surface of the active layer, and (ii) a part of the side end surface thereof. The upper end surface of the active layer refers to a surface positioned between the source electrode and the drain electrode. As such, the structure is provided with the blocking layer which is provided separately from the electrodes and the insulating layer each required for such a semiconductor device, and which serves as a protective layer for blocking the active layer from the atmosphere. Moreover, the blocking layer directly meeting the above region is made of each of the aforementioned materials that match well with the ZnO and the MgxZn1-xO as described above. This makes it possible to stabilize the element property of the semiconductor device.
  • [0045]
    It is preferable to arrange the semiconductor device such that at least one of the blocking layers is made of resin. A blocking layer made of resin can be formed with the use of an existing resin formation device. Accordingly, a complex film formation process is not required for the formation of the blocking layer. This makes it easier to manufacture the semiconductor device. This allows reduction of manufacturing cost of the semiconductor device. Further, the use of the resin allows improvement of flexibility of the semiconductor device. This is especially suitable in cases where a flexible substrate is used as the substrate of the semiconductor device.
  • [0046]
    It is preferable to arrange the semiconductor device such that: a blocking layer constituting the blocking layers is made of resin, and the blocking layer is so provided as to meet the active layer separately from (i) each of two electrodes serving as blocking layers and connected to the active layer, and (ii) an insulating layer, which serves as a blocking layer and meets the active layer, for insulating the active layer from a control electrode for controlling move of a movable electric charge in the active layer. The two electrodes connected to the active layer correspond to, e.g., a source electrode and a drain electrode of a thin film transistor, respectively. Moreover, the control electrode corresponds to a gate electrode thereof. In an inverse-staggered thin film transistor, the blocking layer meeting the active layer separately from the gate insulating layer is such a blocking layer (corresponding to the protective layer 8 shown in FIG. 1( a) through FIG. 1( c)) that meets (i) the upper end surface of the active layer, and (ii) a part of the side end surface thereof, as described above. The upper end surface of the active layer refers to a surface positioned between the source electrode and the drain electrode. As such, the structure is provided with the blocking layer which is provided separately from the electrodes and the insulating layer each required for such a semiconductor device, and which serves as a protective layer for blocking the active layer from the atmosphere. Moreover, the blocking layer directly meeting the region can be made of a resin. This makes it possible to reduce the manufacturing cost of the semiconductor device as described above.
  • [0047]
    An electronic device of the present invention includes, as a switching element, any one of the semiconductor devices described above. A performance of the electronic device can be improved by the high performance semiconductor device which uses the transparent ZnO and MgxZn1-xO for the active layer, and which is provided as the switching element.
  • [0048]
    It is preferable to arrange the electronic device such that the switching element is connected to a picture element electrode such that an image signal is written in or read out from the picture element electrode. In an active matrix type display device (e.g., a liquid crystal display device or an organic EL display device) serving as the electronic device, the switching element is turned ON when the image signal is supplied from a driving circuit to the picture element electrode. Further, in an image sensor serving as the electronic device, the switching element is turned ON when reading out the image signal captured in the picture element electrode. As such, the semiconductor device can be used as the switching element in the image displaying electronic device or the image capturing electronic device. This makes it possible for such electronic devices to have high performance with ease.
  • [0049]
    As described above, the semiconductor device of the present invention includes: (1) an active layer, to which group I elements, group III elements, group IV elements, group V elements, or group VII elements are added, and which is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZn1-xO, (ii) amorphous ZnO or amorphous MgxZn1-xO, or (iii) either (a) mixture of the polycrystalline ZnO and the amorphous ZnO or (b) mixture of the polycrystalline MgxZn1-xO and the amorphous MgxZn1-xO; and (2) a blocking member for blocking the active layer such that the region, in which the movable charges move, of the active layer is not influenced by the atmosphere.
  • [0050]
    In this way, the ZnO or the MgxZn1-xO each sensitive to the atmosphere is blocked from the atmosphere. Moreover, the group I elements, the group III elements, the group IV elements, or the group V elements are added to the ZnO or the MgxZn1-xO. This allows reduction of the movable charges generated in the active layer by the blocking layer. This makes it possible to provide a semiconductor device whose element property is stable and is never influenced by the atmosphere, and which uses the ZnO or the MgxZn1-xO by each of which the threshold voltage can be so controlled as to fall within a voltage range allowing for the practical use of the semiconductor device.
  • [0051]
    Additional objects, features, and strengths of the present invention will be made clear by the description below. Further, the advantages of the present invention will be evident from the following explanation in reference to the drawings.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0052]
    FIG. 1( a) is a plan view illustrating a structure of a thin film transistor according to Embodiment 1 of the present invention.
  • [0053]
    FIG. 1( b) is a cross sectional view taken along A-A line of FIG. 1( a).
  • [0054]
    FIG. 1( c) is a cross sectional view taken along B-B line of FIG. 1( a).
  • [0055]
    FIG. 2 is a cross sectional view illustrating another structure of the thin film transistor according to Embodiment 1.
  • [0056]
    FIG. 3( a) is a cross sectional view illustrating a gate wire formation process in manufacturing the thin film transistor shown in FIG. 1.
  • [0057]
    FIG. 3( b) is a cross sectional view illustrating a gate insulating film formation process in manufacturing the thin film transistor shown in FIG. 1.
  • [0058]
    FIG. 3( c) is a cross sectional view illustrating a semiconductor layer formation process in manufacturing the thin film transistor shown in FIG. 1.
  • [0059]
    FIG. 3( d) is a cross sectional view illustrating process of forming a source electrode and a drain electrode, in manufacturing the thin film transistor shown in FIG. 1.
  • [0060]
    FIG. 3( e) is a cross sectional view illustrating a final process in manufacturing the thin film transistor shown in FIG. 1.
  • [0061]
    FIG. 4 is a diagram illustrating the Id−Vg property of each thin film transistor according to Embodiments 1 through 3.
  • [0062]
    FIG. 5 is a plan view illustrating still another structure of the thin film transistor according to Embodiment 1.
  • [0063]
    FIG. 6( a) is a plan view illustrating a structure of a thin film transistor according to Embodiment 2 of the present invention.
  • [0064]
    FIG. 6( b) is a cross sectional view taken along C-C line of FIG. 6( a).
  • [0065]
    FIG. 6( c) is a cross sectional view taken along D-D line of FIG. 6( a).
  • [0066]
    FIG. 7 is a cross section illustrating another structure of the thin film transistor according to Embodiment 2.
  • [0067]
    FIG. 8( a) is a cross sectional view illustrating a priming insulating layer formation process in manufacturing the thin film transistor shown in FIG. 6.
  • [0068]
    FIG. 8( b) is a cross sectional view illustrating a process of forming a source electrode and a drain electrode, in manufacturing the thin film transistor shown in FIG. 6.
  • [0069]
    FIG. 8( c) is a cross sectional view illustrating a process of forming a semiconductor layer, a gate insulating film, and a gate electrode, in manufacturing the thin film transistor shown in FIG. 6.
  • [0070]
    FIG. 8( d) is a cross sectional view illustrating a final process in manufacturing the thin film transistor shown in FIG. 6.
  • [0071]
    FIG. 9( a) is plan view illustrating a structure of a thin film transistor according to Embodiment 3.
  • [0072]
    FIG. 9( b) is a cross sectional view taken along line E-E shown in FIG. 9( a).
  • [0073]
    FIG. 9( c) is a cross sectional view taken along line F-F shown in FIG. 9( a).
  • [0074]
    FIG. 10 is a cross sectional view illustrating another structure of the thin film transistor according to Embodiment 3.
  • [0075]
    FIG. 11( a) is a cross sectional view illustrating a prime insulating film forming process in manufacturing of the thin film transistor shown in FIG. 9( a).
  • [0076]
    FIG. 11( b) is a cross sectional view illustrating a process of forming a source electrode and a drain electrode in the manufacturing of the thin film transistor shown in FIG. 9( a).
  • [0077]
    FIG. 11( c) is a cross sectional view illustrating a process of forming a first gate insulating layer and a semiconductor layer in the manufacturing of the thin film transistor shown in FIG. 9( a).
  • [0078]
    FIG. 11( d) is a cross sectional view illustrating a final process in the manufacturing of the thin film transistor shown in FIG. 9( a).
  • [0079]
    FIG. 12 is a block diagram schematically illustrating a structure of an active matrix type liquid crystal display device according to Embodiment 5 of the present invention.
  • [0080]
    FIG. 13 is a circuit diagram illustrating a structure of a picture element of the liquid crystal display device shown in FIG. 12.
  • [0081]
    FIG. 14( a) is a cross sectional view illustrating a structure of a thin film transistor having no conventional protective layer.
  • [0082]
    FIG. 14( b) is a cross sectional view illustrating a structure of a thin film transistor having the conventional protective layer.
  • [0083]
    FIG. 15 is a diagram illustrating (i) the Id−Vg property of the thin film transistor having the protective layer, and (ii) the Id−Vg property of the thin film transistor having no protective layer.
  • [0084]
    FIG. 16 is a diagram illustrating (i) the voltage-resistivity property of an zinc oxide film of the thin film transistor having the protective layer, and (ii) the voltage-resistivity property of an zinc oxide film of the thin film transistor having no protective layer.
  • [0085]
    FIG. 17 is a diagram illustrating the Id−Vg property of a thin film transistor according to Embodiment 4.
  • [0086]
    FIG. 18 is a diagram illustrating a TFT property change occurring over time in response to application of a positive gate voltage, in the thin film transistor according to Embodiment 4.
  • BEST MODE FOR CARRYING OUT THE INVENTION
  • [0087]
    The following explains the present invention more in detail, with reference to examples and comparative examples; however, the present invention is not limited to these.
  • Embodiment 1
  • [0088]
    Embodiment 1 of the present invention will be explained below with reference to FIG. 1 through FIG. 5.
  • [0089]
    FIG. 1( a) is a plan view illustrating a thin film transistor 1 according to the present embodiment. FIG. 1( b) is a cross sectional view taken along line A-A of FIG. 1( a). FIG. 1( c) is a cross sectional view taken along line B-B of FIG. 1( a). Note that, although FIG. 1( b) and FIG. 1( c) describes rise and recess each formed in the central portion of the surface of a protective layer 8, FIG. 1( a) does not describe the rise and the recess for the sake of simplicity.
  • [0090]
    As shown in FIG. 1( a) through FIG. 1( c), the thin film transistor 1 serving as a semiconductor device has the inverse staggered structure. Specifically, a gate electrode 3 is formed on an insulating substrate 2. On the insulating substrate 2 and the gate electrode 3, a gate insulating layer 4 is provided. Provided on the gate insulating layer 4 is a semiconductor layer 5. Provided on the semiconductor layer 5 and the gate insulating layer 4 are: a source electrode 6 and a drain electrode 7 each serving as an electrode section. Further, a protective layer 8 is so provided as to cover the semiconductor layer 5, the source electrode 6, and a part of the drain electrode 7.
  • [0091]
    Further, in cases where the thin film transistor 1 is used for a display device such as an active matrix liquid crystal display device of Embodiment 4, the drain electrode 7 is connected to a picture element electrode. Alternatively, the drain electrode 7 is formed in one piece with the picture element electrode, by way of a transparent conductive film. Therefore, the part of the drain electrode 7 is not covered with the protective layer 8.
  • [0092]
    The gate insulating layer 4 is made of an insulator. Examples of the insulator includes: SiO2, Al2O3, AN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YSc0 3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, and a mixed crystal of LiGaO2 such as (Li1-(x|y)NaxKy)(Ga1-zAlz)O2. Another example thereof is a solid solution containin at least two of the insulators. Each of the insulators matches well with ZnO and MgxZn1-xO. Further, the gate insulating layer 4 may be made up of a plurality of layers made of the above insulators. For example, the gate insulating layer 4 may be made up of a first insulating layer 4 a and a second insulating layer 4 b as shown in FIG. 2. In such a structure, the first insulating layer 4 a is made of an insulator having a good interface property with the semiconductor layer 5, such as Al2O3, AN, and MgO. On the other hand, the second insulating layer 4 b is made of an insulator having a good insulation performance, such as SiO2. The gate insulating layer 4 thus obtained on the insulating substrate 2 is highly reliable.
  • [0093]
    The semiconductor layer 5 serves as an active layer, and is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZN1-xO; (ii) amorphous ZnO or amorphous MgxZN1-xO; or (iii) either mixture of the polycrystalline ZnO and the amorphous ZnO, or mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO. A group I element, a group III element, a group IV element, a group V element, or a group VII element is added to the semiconductor. Each of the group I element and the group V element is preferable for the element to be added thereto. For example, the semiconductor layer 5 is made of (i) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains either (a) the mixture of the polycrystalline ZnO and the amorphous ZnO, or (b) the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO.
  • [0094]
    The protective layer 8 covers a portion of the semiconductor layer 5. The source electrode 6 and the drain electrode 7 are not provided on the portion (the portion is not covered with the source electrode 6 and the drain electrode 7), and the portion does not meet (form an interface with) the gate insulating layer 4. The protective layer 8 is made of SiO2, Al2O3, A1N, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2, or a solid solution containing at least two of them.
  • [0095]
    Alternatively, the protective layer 8 may be made of a resin such as acryl. Such a protective layer 8 made of the resin can be formed with the use of an existing resin formation device. Accordingly, a complex film formation process is not required for the formation of the protective layer 8. This makes it easier to manufacture the thin film transistor 1. This allows reduction of manufacturing cost of the thin film transistor 1. Further, the use of the resin allows improvement of flexibility of the thin film transistor 1. This is especially suitable in cases where a flexible substrate is used as the insulating substrate 2.
  • [0096]
    Further, the protective layer 8 may be made up of a plurality of layers made of the aforementioned insulators. For example, as shown in FIG. 2, the protective layer 8 is made up of two layers: a first protective layer 8 a and a second protective layer 8 b. In such a structure, the first protective layer 8 a is made of an insulator (Al2O3, AlN, or MgO) which allows a good interface property with the semiconductor layer 5, and the second protective layer 8 b is made of an insulator (SiO2) which blocks the semiconductor layer 5 from the atmosphere well. The protective layer 8 thus obtained is highly reliable.
  • [0097]
    In the thin film transistor 1, the gate insulating layer 4, the source electrode 6, the drain electrode 7, and the protective layer 8 forms a blocking member, i.e., respectively serve as blocking layers.
  • [0098]
    Explained here is a method for manufacturing the thin film transistor 1 arranged as above, with reference to FIG. 3( a) through FIG. 3( e) respectively illustrating processes of the manufacturing thereof.
  • [0099]
    Firstly, sputtering is carried out such that Ta, which is a material (gate electrode material) of the gate electrode 3, is so provided on the insulating substrate 2 as to have a thickness of approximately 300 nm. Then, a resist pattern having a predetermined shape is formed on the gate electrode material in accordance with the photolithography process. The gate electrode material is subjected to dry etching using CF4+O2 gas, with the use of the resist pattern thus formed. This allows formation of (i) the gate electrode 3 obtained by patterning the gate electrode material in accordance with the resist pattern, and (ii) a gate wire (not shown) connected to the gate electrode 3 (see FIG. 3( a)). Examples of the insulating substrate 2 include: a glass substrate, a quartz substrate, a plastic substrate, and the like. Examples of the gate electrode material include: Ta, Al, Cr, and the like.
  • [0100]
    Next, Al2O3 is provided as the gate insulating layer 4 in accordance with the pulse laser deposition method so as to have a thickness of approximately 500 nm, for example. The formation of such a Al2O3 thin film is carried out in the following conditions (1) through (4): (1) a substrate temperature is set at 300° C., (2) the film forming is carried out under vacuum oxygen atmosphere, (3) a laser power is set at 3.0 J/cm2, and (4) a repetition frequency is set at 10 Hz (see FIG. 3( b)). Note that the material of the gate insulating layer 4 is Al2O3 here; however, each of the aforementioned insulators may be used for the material.
  • [0101]
    After the Al2O3 deposition, the following is carried out for the purpose of forming the semiconductor 5 continuously. For example, polycrystalline ZnO to which nitrogen is doped is so formed in accordance with the pulse laser deposition method as to have a thickness of approximately 50 nm. The deposition is carried out under the following conditions (1) through (4): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under mixture atmosphere of vacuum oxygen and nitrogen monoxide, (3) the laser power is set at 1.1 J/cm2, and (4) the repetition frequency is set at 10 Hz. With this method, a layer of ZnO to which nitrogen is doped is formed. Note that nitrogen monoxide is used as a nitrogen source here; however, a gas including nitrogen such as dinitrogen monoxide, nitrogen dioxide, and ammonia may be used for the nitrogen source. Note also that the material of the semiconductor layer 5 is ZnO here; however, ZnO (MgxZn1-xO) containing Mg may be used as the material. Further, the ZnO and the ZnO containing Mg may be amorphous, polycrystalline, or amorphous and polycrystalline.
  • [0102]
    A resist pattern having a predetermined shape is formed, in accordance with the photolithography process, on the ZnO layer to be the semiconductor layer 5. Then, wet etching using nitric acid, acetic acid, or the like is carried out with respect to the ZnO layer, with the use of the resist pattern thus formed. Accordingly, the semiconductor layer 5 having the predetermined shape is obtained (see FIG. 3( c)).
  • [0103]
    Next, Al is so provided as to have a thickness of approximately 200 nm, in accordance with the sputtering method. Then, the layer of Al is subjected to photolithography and dry etching using CI2 gas so as to be patterned. Accordingly, the source electrode 6 and the drain electrode 7 are formed (see FIG. 3( d)).
  • [0104]
    Further, Al2O3 is so formed in accordance with the pulse laser deposition method as to have a thickness of approximately 200 nm. The layer of Al2O3 is subjected to ion milling using a predetermined resist pattern made in accordance with photolithography, with the result that an irrelevant part of the Al2O3 layer is removed. This allows formation of the protective layer 8, with the result that the manufacturing of the thin film transistor 1 is completed (see FIG. 3( e)). Note that the material (insulator) of the protective layer 8 is Al2O3 here; however, the material may be each of the aforementioned insulators. Moreover, the protective layer 8 may be made up of a plurality of layers of the aforementioned insulators.
  • [0105]
    FIG. 4 illustrates the Id−Vg property of the thin film transistor 1 manufactured as above. Compare the Id−Vg property shown in FIG. 4 with the Id−Vg property (see FIG. 15) of the thin film transistor which has the protective layer and which uses ZnO to which no nitrogen is doped. The comparison clarifies that the thin film transistor 1 has a threshold voltage Vth of on the order of 0 V. As such, the doping of nitrogen into ZnO makes it possible that the threshold voltage Vth of the thin film transistor 1 having the protective layer 8 is so controlled as to be a voltage practically causing no problem. Especially, depending on the doping amount, the threshold voltage can be controlled to be increased from a negative voltage up to approximately +10 V.
  • [0106]
    It is understood why the threshold voltage Vth is controlled by doping nitrogen into ZnO, as follows. That is, the formation of the protective layer causes decrease of the surface level of the ZnO layer. This causes elimination of the band-bending spread over the depletion layer formed within the ZnO layer. Accordingly, the ZnO layer becomes the n-type semiconductor indicating the intrinsic resistance, with the result that too many free electrons are generated. Nitrogen is a group V element, so that nitrogen works as an acceptor impurity. Therefore, the doping of nitrogen allows reduction of such too many free electrons, with the result that the fermi level is decreased to the vicinity of the center of the band-gap. This allows decrease of the gate voltage required for removal of the too many free electrons, with the result that the threshold voltage becomes on the order of 0 V.
  • [0107]
    This is also true when another group V element such as P, As, or Sb is used. Specifically, see an example in which a Zn compound containing a group V element such as Zn2P3, Zn2As3, or Zn2Sb3 is used as a target for the doping, and in which the semiconductor layer 5 is formed in the following conditions (1) through (3): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under vacuum oxygen atmosphere, and (3) the laser power is set at 1.1 J/cm2. With this, the threshold voltage Vth can be so controlled as to be on the order of 0V. Moreover, depending on the doping amount, the threshold voltage can be controlled to be increased from a negative voltage up to approximately +10 V. This is the same as the case where nitrogen is used for the doping. Of course, the threshold voltage Vth can be controlled in the same manner in accordance with the above method when Zn2N3 is used as the target for the doping.
  • [0108]
    Further, the threshold voltage Vth can be controlled in a similar manner when doping a group I element, a group III element, a group IV element, or a group VII element into a semiconductor containing (i) the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) either the mixture of the polycrystalline ZnO and the amorphous ZnO, or the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO.
  • [0109]
    Note that the semiconductor layer 5 is wholly covered with the protective layer 8 in the structure shown in FIG. 1( a); however, the semiconductor layer 5 does not need to be wholly covered with the protective layer 8 as long as a channel portion (a region in which a carrier (movable charge) moves) of the semiconductor layer 5 of the thin film transistor 1 is not influenced by the atmosphere. For example, see FIG. 5 illustrating a structure in which the semiconductor 5 extends in the direction of the channel width and has end portions which are not covered with the protective layer 8 and which are exposed to the atmosphere. In such a structure, the end portions are influenced by the atmosphere; however, in cases where the channel portion is distant away from the end portions so as to be free from the influence, the semiconductor layer 5 does not need to be covered wholly with the protective layer 8 and the gate insulating layer 4.
  • Embodiment 2
  • [0110]
    Embodiment 2 of the present invention will be explained below with reference to FIG. 6 through FIG. 8.
  • [0111]
    FIG. 6( a) is a plan view illustrating a thin film transistor 11 according to the present embodiment. FIG. 6( b) is a cross sectional view taken along line C-C of FIG. 6( a). FIG. 6( c) is a cross sectional view taken along line D-D of FIG. 6( a). Note that, although FIG. 6( b) and FIG. 6( c) describes rise and recess each formed in the central portion of the surface of a protective layer 19, FIG. 6( a) does not describe the rise and the recess for the sake of simplicity.
  • [0112]
    As shown in FIG. 6( a) through FIG. 6( c), the thin film transistor 11 serving as a semiconductor device has the staggered structure. Specifically, a priming insulating layer 13 is formed on an insulating substrate 12. A source electrode 14 and a drain electrode 15 are formed on the priming insulating layer 13 with a space therebetween. Formed on and above the source electrode 14, the drain electrode 15, and the priming insulating layer are a semiconductor layer 16, a gate insulating layer 17, and a gate electrode 18 in this order. Further, the protective layer 19 is so formed as to cover the semiconductor layer 16, the gate insulating layer 17, and the gate electrode 18. In the thin film transistor 11, the semiconductor layer 16, the gate insulating layer 17, and the gate electrode 18 are patterned to have the same shape (see the shape of the semiconductor layer 16 in FIG. 6( a)), and are formed on top of one another.
  • [0113]
    Further, in cases where the thin film transistor 11 is used for a display device such as the active matrix liquid crystal display device of Embodiment 4, the drain electrode 15 is connected to the picture element electrode. Alternatively, the drain electrode 15 is formed in one piece with the picture element electrode, by way of a transparent conductive film.
  • [0114]
    The priming insulating layer 13 is made of an insulator. Examples of the insulator includes: SiO2, Al2O3, AN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, and a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2. Another example thereof is a solid solution containing at least two of the insulators. The priming insulating layer 13 meets a region of the bottom surface of the semiconductor layer 16. The region does not meet the source electrode 14 and the drain electrode 15.
  • [0115]
    Alternatively, the priming insulating layer 13 may be made of a resin such as acryl. Such a priming insulating layer 13 made of the resin can be formed with the use of an existing resin formation device. Accordingly, a complex film formation process is not required for the formation of the priming insulating layer 13. This makes it easier to manufacture the thin film transistor 11. This allows reduction of manufacturing cost of the thin film transistor 11. Further, the use of the resin allows improvement of flexibility of the thin film transistor 11. This is especially suitable in cases where a flexible substrate is used as the insulating substrate 12.
  • [0116]
    Further, the priming insulating layer 13 may be made up of a plurality of layers made of the aforementioned insulators. For example, as shown in FIG. 7, the priming insulating layer 13 is made up of two layers: a first insulating layer 13 a and a second insulating layer 13 b. In such a structure, the first insulating layer 13 a is made of an insulator (SiO2) which allows a good interface property with the insulating substrate 12, and the second protective layer 8 b is made of an insulator (Al2O3, AlN, or MgO) that allows a good interface property with the semiconductor layer 16. The priming insulating layer 13 thus obtained is highly reliable.
  • [0117]
    In cases where the insulating substrate 12 is made of glass or quartz, the semiconductor layer 16 is covered with either SiO2 or an insulator containing SiO2 even when no priming insulating layer 13 is provided. This is because glass or quartz contains either SiO2 or such an insulator. Accordingly, the semiconductor layer 16 is blocked from the atmosphere.
  • [0118]
    The semiconductor layer 16 serving as an active layer is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline Mg,ZN1-xO; (ii) amorphous ZnO or amorphous MgxZN1-xO; or (iii) either mixture of the polycrystalline ZnO and the amorphous ZnO, or mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO. A group I element, a group III element, a group IV element, a group V element, or a group VII element is added to the semiconductor. Each of the group I element and the group V element is preferable for the element to be added thereto. For example, the semiconductor layer 16 is made of (i) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains either (a) the mixture of the polycrystalline ZnO and the amorphous ZnO, or (b) the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO.
  • [0119]
    The gate insulating layer 17 meets the semiconductor layer 16, and is made of an insulator. Examples of the insulator includes: SiO2, Al2O3, AN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, and a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2. Another example there solid solution containing at least two of the insulators. Further, the gate insulating layer 17 may be made up of a plurality layers made of the above insulators. For example, the gate insulating layer 17 may be made up of a first insulating layer 17 a and a second insulating layer 17 b as shown in FIG. 7. In such a structure, the first insulating layer 17 a is made of an insulator having a good interface property with the semiconductor layer 16, such as Al2O3, AN, and MgO. On the other hand, the second insulating layer 17 b is made of an insulator having a good insulation performance, such as SiO2. The gate insulating layer 4 thus obtained between the semiconductor layer 16 and the gate electrode 18 is highly reliable.
  • [0120]
    The protective layer 19 is so formed as to cover the semiconductor layer 16, the gate insulating layer 17, and the gate electrode 18, which are formed on top of one another. The protective layer 19 is made of an insulator. Examples of the insulator include: SiO2, Al2O3, AN, MgO, Ta2O5, T10 2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, and a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2. Another example thereof is a solid solution containing a least two of them.
  • [0121]
    Alternatively, the protective layer 19 may be made of a resin such as acryl, as is the case with the priming insulating layer 13. This renders the same benefit as the benefit rendered when the priming insulating layer 13 is made of resin.
  • [0122]
    The protective layer 19 has sidewalls covering the side surfaces, which are surfaces excluding (i) the bottom surface of the semiconductor layer 16, and (ii) the upper surface of the semiconductor layer 16. The bottom surface of the semiconductor layer refers to the surface meeting the priming insulating layer 13, the source electrode 14, and the drain electrode 15. The upper surface thereof refers to the surface meeting the gate insulating layer 17. Further, the protective layer 19 may be made up of a plurality layers made of the aforementioned insulators. For example, as shown in FIG. 7, the protective layer 19 is made up of two layers: a first protective layer 19 a and a second protective layer 19 b. In such a structure, the first protective layer 19 a is made of an insulator having a good interface property with the semiconductor layer 16, such as Al2O3, AN, and MgO. On the other hand, the second protective layer 19 b is made of an insulator blocking the semiconductor layer 16 from the atmosphere well, such as SiO2. The protective layer 19 thus obtained is highly reliable.
  • [0123]
    In the thin film transistor 11, the priming insulating layer 13, the source electrode 14, the drain electrode 15, the gate insulating layer 17, and the protective layer 19 forms a blocking member, i.e., respectively serve as blocking layers.
  • [0124]
    Explained here is a method for manufacturing the thin film transistor 11 arranged as above, with reference to FIG. 8( a) through FIG. 8( d) respectively illustrating processes of the manufacturing thereof.
  • [0125]
    Firstly, Al2O3 is provided on the insulating substrate 12 as the priming insulating layer 13 in accordance with the pulse laser deposition method so as to have a thickness of approximately 100 nm (see FIG. 8( a)). The deposition is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C. upon the deposition, (2) the film forming is carried out under vacuum oxygen atmosphere, (3) the laser power is set at 3.0 J/cm2, and (4) the repetition frequency is set at 10 Hz. Note that the material of the priming insulating layer 13 is Al2O3 here; however, each of the aforementioned insulators may be used for the material.
  • [0126]
    Next, Al is so provided on the priming insulating layer 13 as to have a thickness of approximately 150 nm, in accordance with the sputtering method or the like. Then, dry etching is carried out with the use of a resist patterned in a predetermined shape in accordance with photolithography, with the result that an irrelevant part of the Al layer is removed. This allows formation of the source electrode 14 and the drain electrode 15 (see FIG. 8( b)).
  • [0127]
    Next, the following is carried out for the purpose of forming the semiconductor layer 16. For example, polycrystalline ZnO to which nitrogen is doped is so provided in accordance with the pulse laser deposition method as to have a thickness of approximately 50 nm. The deposition is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C. upon the deposition, (2) the film forming is carried out under a mixture atmosphere of vacuum oxygen and nitrogen monoxide, (3) the laser power is set at 1.1 J/cm2, and (4) the repetition frequency is set at 10 Hz. With this method, a layer of ZnO to which nitrogen is doped is formed. Note that nitrogen monoxide is used as a nitrogen source here; however, a gas including nitrogen such as dinitrogen monoxide, nitrogen dioxide, and ammonia may be used for the nitrogen source. Note also that N is used here as the impurity to be doped to ZnO; however, P, As, or Sb may be used as the impurity. Note also that the material of the semiconductor layer 16 is ZnO here; however, ZnO (MgxZn1-xO) containing Mg may be used as the material. Further, the ZnO and the ZnO containing Mg may be amorphous, polycrystalline, or amorphous and polycrystalline.
  • [0128]
    Formed continuously after the deposition of the semiconductor layer 16 is the gate insulating layer 17. The gate insulating layer 17 is formed, e.g., as follows. That is, Al2O3 is so provided in accordance with the pulse laser deposition method as to have a thickness of approximately 500 nm. The formation of the Al2O3 thin film is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under vacuum oxygen atmosphere, (3) the laser power is set at 3.0 J/cm2, and (4) the repetition frequency is set at 10 Hz. Note that Al2O3 is used as the material of the gate insulating layer 17; however, the aforementioned insulators may be used instead.
  • [0129]
    Thereafter, Al or the like is formed as the gate electrode 18 in accordance with the sputtering method so as to have a thickness of approximately 200 nm. Then, ion milling is carried out with the use of a resist patterned in a predetermined shape in accordance with photolithography, with the result that respective irrelevant parts of the Al layer, the gate insulating layer 17, and the semiconductor layer 16 are removed. With this, the gate electrode 18 is formed on and above the semiconductor layer 16 and the gate insulating layer 17 (see FIG. 8( c)). Here, the respective side surfaces of the gate electrode 18, the gate insulating layer 17, and the semiconductor layer 16 are perpendicular to the upper surface of the insulating substrate 12. However, for attainment of a good coverage by the protective layer 19, the side surfaces may form a forward tapered shape expanding from the gate electrode 18 toward the semiconductor layer 16.
  • [0130]
    Finally, for example, the protective layer 19 is formed. Specifically, Al2O3 is so formed in accordance with the pulse laser deposition method as to have a thickness of approximately 200 nm. The film forming is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under vacuum oxygen atmosphere, (3) the laser power is set at 3.0 J/cm2, and (4) the repetition frequency is set at 10 Hz. Thereafter, ion milling is carried out with the use of a predetermined resist pattern made in accordance with photolithography, with the result that an irrelevant part of the Al2O3 layer is removed. This allows formation of the protective layer 19, with the result that the manufacturing of the thin film transistor 11 is completed (see FIG. 8( d)). Note that the material of the protective layer 19 is Al2O3 here; however, the material may be SiO2, A1N, MgO, Ta2O5, or a solid solution containing at least two of SiO2, A1N, MgO, Ta2O5, and Al2O3.
  • [0131]
    The thin film transistor 11 thus obtained has the same Id−Vg property as the property shown in FIG. 4. That is, the threshold voltage Vth of the thin film transistor 11 is so controlled as to be on the order of 0 V. As such, the threshold voltage Vth of the thin film transistor 11 is so controlled as to be a voltage causing practically no problem, by forming the semiconductor layer 16 with the use of the semiconductor obtained by doping nitrogen into ZnO.
  • [0132]
    Further, as described in Embodiment 1, doping of the other group V element such as P, AS, or Sb makes it possible to control, in the same manner, the threshold voltage Vth to be on the order of 0 V.
  • [0133]
    Further, the threshold voltage Vth can be controlled in the same manner when doping a group I element, a group III element, a group IV element, or a group VII element into a semiconductor containing (i) the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) either the mixture of the polycrystalline ZnO and the amorphous ZnO, or the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO.
  • [0134]
    Note that the semiconductor layer 16 is wholly covered with the priming insulating layer 13, the source electrode 14, the drain electrode 15, the gate insulating film 17, and the protective layer 19 in the structure shown in FIG. 6( a) through FIG. 6( c); however, the semiconductor layer 16 does not need to be wholly covered as long as a channel portion (a region in which a carrier moves) of the semiconductor layer 16 of the thin film transistor 11 is not influenced by the atmosphere. For example, see chain-double dashed line in FIG. 6( a), illustrating a structure in which: the semiconductor layer 16, the gate insulating layer 17, and the gate electrode 18 each having the same shape extend in the direction of the channel width, and respectively have end portions which are not covered with the protective layer 19 and which are exposed to the atmosphere. In such a structure, the side surfaces of the end portions of the semiconductor layer 16 are influenced by the atmosphere; however, in cases where the channel portion is distant away from the end portions so as to be free from the influence, the semiconductor layer 16 does not need to be covered wholly.
  • Embodiment 3
  • [0135]
    Embodiment 3 of the present invention will be described below with reference to FIG. 9 through FIG. 11.
  • [0136]
    FIG. 9( a) is a plan view illustrating a thin film transistor 21 according to the present embodiment. Further, FIG. 9( b) is a cross sectional view taken along line E-E of FIG. 9( a). FIG. 9( c) is a cross sectional view taken along line F-F of FIG. 9( a).
  • [0137]
    As shown in FIG. 9( a) through FIG. 9( c), the thin film transistor 21 serving as a semiconductor device is arranged as follows. That is, a priming insulating layer 23 is formed on an insulating substrate 22. Formed on the priming insulating layer 23 are a source electrode 24 and a drain electrode 25. Further, a semiconductor layer 26 is formed on the priming insulating layer 23, the source electrode 24, and the drain electrode 25. Formed on the semiconductor layer 26 is a first gate insulating layer 27. The semiconductor layer 26 and the first gate insulating layer 27 are covered with a second gate insulating layer 28 which also serves as a protective layer of the semiconductor layer 26. Formed on the second gate insulating layer 28 is a gate electrode 29.
  • [0138]
    Further, in cases where the thin film transistor 21 is used for a display device such as the active matrix liquid crystal display device of Embodiment 4, the drain electrode 25 is connected to a picture element electrode. Alternatively, the drain electrode 25 is formed in one piece with the picture element electrode, by way of a transparent conductive film.
  • [0139]
    The priming insulating layer 23 is made of an insulator. Examples of the insulator includes: SiO2, Al2O3, AN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, SC2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, and a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2. Another example thereof is a solid solution containing at least two of the insulators.
  • [0140]
    Alternatively, the priming insulating layer 23 may be made of a resin such as acryl. Such a priming insulating layer 23 made of the resin can be formed with the use of an existing resin formation device. Accordingly, a complex film formation process is not required for the formation of the priming insulating layer 23. This makes it easier to manufacture the thin film transistor 21. This allows reduction of manufacturing cost of the thin film transistor 21. Further, the use of the resin allows improvement of flexibility of the thin film transistor 21. This is especially suitable in cases where a flexible substrate is used as the insulating substrate 22.
  • [0141]
    The priming insulating layer 23 meeting a region of the bottom surface of the semiconductor layer 26. The region does not meet the source electrode 24 and the drain electrode 25. Further, the priming insulating layer 23 may be made up of a plurality of layers made of the aforementioned insulators. For example, as shown in FIG. 10, the priming insulating layer 23 is made up of two layers: a first priming insulating layer 23 a and a second priming insulating layer 23 b. In such a structure, the first priming insulating layer 23 a is made of an insulator (SiO2) which allows a good interface property with the insulating substrate 22, and the second priming insulating layer 23 b is made of an insulator (Al2O3, MN, or MgO) which allows a good interface property with the semiconductor layer 26. The priming insulating layer 23 thus obtained on the insulating substrate 22 is highly reliable.
  • [0142]
    In cases where the insulating substrate 22 is made of glass or quartz, the semiconductor layer 26 is covered with either SiO2 or an insulator containing SiO2 even when no priming insulating layer 23 is provided. This is because glass or quartz contains either SiO2 or such an insulator. Accordingly, the semiconductor layer 16 is blocked from the atmosphere.
  • [0143]
    The semiconductor layer 26 is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZN1-xO; (ii) amorphous ZnO or amorphous MgxZN1-xO; or (iii) either mixture of the polycrystalline ZnO and the amorphous ZnO, or mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO. A group I element, a group III element, a group IV element, a group V element, or a group VII element is added to the semiconductor. Each of the group I element and the group V element is preferable for the element to be added thereto. For example, the semiconductor layer 26 is made of (i) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) a semiconductor which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains either (a) the mixture of the polycrystalline ZnO and the amorphous ZnO, or (b) the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO.
  • [0144]
    The first gate insulating layer 27 meets the semiconductor layer 26, and is made of an insulator. Examples of the insulator includes: SiO2, Al2O3, AN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, and a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2. Another example thereof is a solid solution containing at least two of the insulators. Further, the gate insulating layer 27 may be made up of a plurality of layers made of the above insulators. For example, the gate insulating layer 27 may be made up of a first insulating layer 27 a and a second insulating layer 27 b as shown in FIG. 10. In such a structure, the first insulating layer 27 a is made of an insulator having a good interface property with the semiconductor layer 26, such as Al2O3, A1N, and MgO. On the other hand, the second insulating layer 27 b is made of an insulator having a good insulation performance, such as SiO2. The gate insulating layer 27 thus obtained between the semiconductor layer 26 and the gate electrode 28 is highly reliable.
  • [0145]
    The second gate insulating layer 28 is so formed as to cover the semiconductor layer 26 and the first gate insulating layer 27, which are formed on top of each other. The second gate insulating layer 28 is made of an insulator. Examples of the insulator include: SiO2, Al2O3, A1N, MgO, Ta2O5, T10 2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, SC2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, and a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2. Another example thereof is a solid solution containing at least two of them.
  • [0146]
    Alternatively, the second gate insulating layer 28 may be made of a resin such as acryl, as is the case with the priming insulating layer 23. This renders the same benefit as the benefit rendered when the priming insulating layer 23 is made of resin.
  • [0147]
    The second gate insulating layer 28 has sidewalls covering the side surfaces, which are surfaces excluding (i) the bottom surface of the semiconductor layer 26, and (ii) the upper surface of the semiconductor layer 26. The bottom surface of the semiconductor layer refers to the surface meeting the priming insulating layer 23, the source electrode 24, and the drain electrode 25. The upper surface thereof refers to the surface meeting the first gate insulating layer 27. As such, the second gate insulating layer 28 provided under the gate electrode 29 serves as a protective layer covering the side surface of the semiconductor layer 26. Further, the second gate insulating layer 28 is provided such that the first gate insulating layer 27 and the second gate insulating layer 28 constitute a gate insulating layer securely having a thickness significant for a gate insulating layer.
  • [0148]
    Further, the second gate insulating layer 28 may be made up of a plurality of layers of the aforementioned insulators. For example, as shown in FIG. 10, the second gate insulating layer 28 is made up of two layers: a lower insulating layer 28 a and an upper insulating layer 28 b. In such a structure, the first insulating layer 28 a is made of an insulator having a good interface property with the semiconductor layer 26, such as Al2O3, AN, and MgO. On the other hand, the second insulating layer 28 b is made of an insulator blocking the semiconductor layer 26 from the atmosphere well, such as SiO2. The second gate insulating layer 28 thus obtained between the first gate insulating layer 27 and the gate electrode 29 is highly reliable.
  • [0149]
    In the thin film transistor 21, the priming insulating layer 23, the source electrode 24, the drain electrode 25, the first gate insulating layer 27, and the second gate insulating layer 29 forms a blocking member, i.e., respectively serve as blocking layers.
  • [0150]
    Explained here is a method for manufacturing the thin film transistor 21 arranged as above, with reference to FIG. 11( a) through FIG. 11( d) respectively illustrating processes of the manufacturing thereof.
  • [0151]
    Firstly, for example, Al2O3 is provided on the insulating substrate 22 as the priming insulating layer 23 in accordance with the pulse laser deposition method so as to have a thickness of approximately 100 nm (see FIG. 11( a)). The deposition is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under vacuum oxygen atmosphere, (3) the laser power is set at 3.0 J/cm2, and (4) the repetition frequency is set at 10 Hz. Note that the material of the priming insulating layer 23 is Al2O3 here; however, each of the aforementioned insulators may be used for the material.
  • [0152]
    Next, Al is so provided on the priming insulating layer 23 as to have a thickness of approximately 150 nm, in accordance with the sputtering method or the like. Then, dry etching is carried out with the use of a resist patterned in a predetermined shape in accordance with photolithography, with the result that an irrelevant part of the Al layer is removed. This allows formation of the source electrode 24 and the drain electrode 25 (see FIG. 11( b)).
  • [0153]
    Next, the following is carried out for the purpose of forming the semiconductor layer 26. For example, polycrystalline ZnO to which nitrogen is doped is so provided in accordance with the pulse laser deposition method as to have a thickness of approximately 50 nm. The deposition is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under a mixture atmosphere of vacuum oxygen and nitrogen monoxide, (3) the laser power is set at 1.1 J/cm2, and (4) the repetition frequency is set at 10 Hz (see FIG. 3( b)). With this method, a layer of ZnO to which nitrogen is doped is formed. Note that nitrogen monoxide is used as a nitrogen source here; however, a gas including nitrogen such as dinitrogen monoxide, nitrogen dioxide, and ammonia may be used for the nitrogen source. Note also that N is used here as the impurity to be doped to ZnO; however, P, As, or Sb may be used as the impurity. Note also that the material of the semiconductor layer 26 is ZnO here; however, ZnO (MgxZn1-xO) containing Mg may be used as the material. Further, the ZnO and the ZnO containing Mg may be amorphous, polycrystalline, or amorphous and polycrystalline.
  • [0154]
    Formed continuously after the deposition of the semiconductor layer 26 is the first gate insulating layer 27. The first gate insulating layer 27 is formed, e.g., as follows. That is, Al2O3 is so provided in accordance with the pulse laser deposition method as to have a thickness of approximately 50 nm. The formation of the Al2O3 thin film is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under vacuum oxygen atmosphere, (3) the laser power is set at 3.0 J/cm2, and (4) the repetition frequency is set at 10 Hz. Note that Al2O3 is used as the material of the first gate insulating layer 27; however, the aforementioned insulators may be used instead. Further, the first gate insulating film 27 may be made up of a plurality of layers made of the aforementioned insulators.
  • [0155]
    Thereafter, ion milling is carried out with the use of a resist patterned in a predetermined shape in accordance with photolithography, with the result that respective irrelevant parts of the ZnO layer and the Al2O3 layer is removed. With this, the first gate insulating layer 27 and the semiconductor layer 26 are formed (see FIG. 11( c)). Here, the respective side surfaces of the first gate layer 27 and the semiconductor layer 26 are perpendicular to the upper surface of the insulating substrate 22. However, for attainment of a good coverage by the second gate insulating layer 28, the side surfaces may form a forward tapered shape expanding from the first gate insulating film 27 toward the semiconductor layer 26.
  • [0156]
    Next, the second gate insulating film 28 is formed, e.g., as follows. That is, Al2O3 is so provided in accordance with the pulse laser deposition method as to have a thickness of approximately 450 nm. The film forming is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 300° C., (2) the film forming is carried out under vacuum oxygen atmosphere, (3) the laser power is set at 3.0 J/cm2, and (4) the repetition frequency is set at 10 Hz. Note that Al2O3 is used as the material of the second gate insulating layer 28; however, the aforementioned insulators may be used instead. Further, the second gate insulating film 28 may be made up of a plurality of layers made of the aforementioned insulators.
  • [0157]
    Thereafter, for the purpose of forming the gate electrode 29, Al or the like is so provided in accordance with the sputtering method as to have a thickness of 200 nm. Carried out next is ion milling with the use of a resist patterned in a predetermined shape in accordance with the photolithography, with the result that respective irrelevant parts of the gate electrode 29 and the second gate insulating film 28 are removed. With this, the manufacturing of the thin film transistor 21 is completed (see FIG. 11( d)).
  • [0158]
    The thin film transistor 11 thus obtained has the same Id−Vg property as the property shown in FIG. 4. That is, the threshold voltage Vth of the thin film transistor 21 is so controlled as to be on the order of 0 V. As such, the threshold voltage Vth is so controlled as to be a voltage causing practically no problem, by forming the semiconductor layer 26 with the use of the semiconductor obtained by doping nitrogen into ZnO.
  • [0159]
    Further, as described in Embodiment 1, doping of the other group V element such as P, AS, or Sb makes it possible to control, in the same manner, the threshold voltage Vth to be on the order of 0 V.
  • [0160]
    Further, the threshold voltage Vth can be controlled in the same manner when doping a group I element, a group III element, a group IV element, or a group VII element into a semiconductor containing (i) the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) either the mixture of the polycrystalline ZnO and the amorphous ZnO, or the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO.
  • [0161]
    Note that the semiconductor layer 26 is wholly covered with the priming insulating layer 23, the source electrode 24, the drain electrode 25, the first gate insulating film 27, and the second gate insulating film 28 in the structure shown in FIG. 9( a) through FIG. 9( c); however, the semiconductor layer 26 does not need to be wholly covered as long as a channel portion (a region in which a carrier moves) of the semiconductor layer 26 of the thin film transistor 21 is not influenced by the atmosphere. For example, see chain-double dashed line in FIG. 9( a), illustrating a structure in which: the semiconductor layer 26 and the first gate insulating layer 27 extend in the direction of the channel width, and respectively have end portions which are not covered with the second gate insulating layer 28 and which are exposed to the atmosphere. In such a structure, the side surfaces of the end portions of the semiconductor layer 26 are influenced by the atmosphere; however, in cases where the channel portion is distant away from the end portions so as to be free from the influence, the semiconductor layer 26 does not need to be covered wholly.
  • Embodiment 4
  • [0162]
    Embodiment 4 of the present invention will be described below with reference to FIG. 1, FIG. 2, FIG. 3, FIG. 5, FIG. 6, FIG. 7, FIG. 9, FIG. 10, FIG. 17, and FIG. 18. Note that, materials having the equivalent functions as those of the materials of Embodiments 1 through 3 will be given the same reference symbols, and explanation thereof will be omitted here.
  • [0163]
    See FIG. 1( a) through FIG. 1( c). The semiconductor layer 5 of the thin film transistor 1 is replaced with a semiconductor layer 105. The semiconductor layer 105 serves as an active layer, and is made of a semiconductor as is the case with the semiconductor layer 5. Specifically, the semiconductor layer 105 is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZN1-xO; (ii) amorphous ZnO or amorphous MgxZN1-xO; or (iii) either mixture of the polycrystalline ZnO and the amorphous ZnO, or mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO. A group I element, a group III element, a group IV element, a group V element, or a group VII element is added to the semiconductor. Each of the group I element and the group V element is preferable for the element to be added thereto. For example, the semiconductor layer 105 is made of (i) a semiconductor which contains hydrogen, and which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) a semiconductor which contains hydrogen, and which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) a semiconductor which contains hydrogen, and which contains nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements, and which contains either (a) the mixture of the polycrystalline ZnO and the amorphous ZnO, or (b) the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO.
  • [0164]
    In the manufacturing of the thin film transistor 1 thus arranged, the semiconductor layer 105 is manufactured in accordance with a manufacturing process different from that of the semiconductor layer 5 as described below. For example, for the purpose of forming the semiconductor layer 105 continuously after the Al2O3 deposition for forming the gate insulating layer 4 as shown in FIG. 3( b), polycrystalline ZnO to which nitrogen and hydrogen are doped is so provided in accordance with the pulse laser deposition method as to have a thickness of approximately 50 nm. The deposition is carried out in the following conditions (1) through (4): (1) the substrate temperature is set at 200° C.; (2) the film forming is carried out under mixture atmosphere of nitrogen gas and water vapor; (3) the laser power is set at 1.1 J/cm2, and (4) the repetition frequency is set at 10 Hz. With this method, a layer of ZnO to which nitrogen and hydrogen is doped is formed.
  • [0165]
    The nitrogen gas is used as a nitrogen source here; however, a gas including nitrogen such as dinitrogen monoxide, nitrogen dioxide, and ammonia may be used for the nitrogen source. Moreover, the water vapor is used as a hydrogen source; however, a gas including hydrogen such as hydrogen peroxide may be used as the hydrogen source. Further, a gas containing nitrogen and hydrogen may be used. A specific example of such a gas is an ammonia gas. In cases where such a gas is used, the nitrogen source is not required. Alternatively, a plurality of gases may be used, as the hydrogen source, from among the water vapor, the hydrogen peroxide gas, and the ammonia gas. Further, the explanation here assumes the case where the material of the semiconductor layer 105 is ZnO; however, ZnO (MgxZn1-xO) containing Mg may be used for the material. Further, the ZnO and the ZnO containing Mg may be amorphous, polycrystalline, or amorphous and polycrystalline.
  • [0166]
    FIG. 17 illustrates the Id−Vg property of the thin film transistor 1 thus obtained. Compare the Id−Vg property shown in FIG. 17 with the Id−Vg property (see FIG. 15) of the thin film transistor which has the protective layer and which uses ZnO to which no nitrogen and no hydrogen are doped. The comparison clarifies that the thin film transistor 1 has a threshold voltage Vth of on the order of 0 V. As such, the doping of nitrogen and hydrogen into ZnO makes it possible that the threshold voltage Vth of the thin film transistor 1 having the protective layer 8 is so controlled as to be a voltage practically causing no problem.
  • [0167]
    It is understood why the threshold voltage Vth is controlled by doping nitrogen and hydrogen into ZnO, as follows. That is, the formation of the protective layer causes elimination of a surface depletion layer. Accordingly, too many free electrons are generated. Nitrogen is a group V element, so that nitrogen works as an acceptor impurity. Therefore, the doping of nitrogen allows reduction of such too many free electrons. Hydrogen is a group I element, so that hydrogen works as a terminator with respect to dangling bond attributing to the generation of the free electrons. Therefore, the doping of hydrogen also allows reduction of such too many free electrons. Further, the doping of nitrogen and hydrogen causes decrease of the fermi level to the center of the band-gap. This allows decrease of the gate voltage required for removal of the too many free electrons, with the result that the threshold voltage becomes on the order of 0 V.
  • [0168]
    Further, the doping of hydrogen allows restraint of a TFT property change (threshold voltage positive shift AVth) occurring over time in response to application of a positive gate voltage, as shown in FIG. 18. Specifically, see the following observation of the threshold voltage change occurring over time under such a condition that the source electrode and the drain electrode each had a ground potential, and that a voltage of +30 V was applied to the gate electrode. The observation clarifies that the TFT formed under the H2O+N2 atmosphere allows restraint of the threshold voltage shift amount as compared with the TFT formed under the O2+NO atmosphere.
  • [0169]
    This is also true when another group V element such as P, As, or Sb is used. Specifically, see an example in which a Zn compound containing a group V element such as Zn2P3, Zn2As3, or Zn2Sb3 is used as a target for the doping, and in which the semiconductor layer 105 is formed under the following conditions (1) through (3): (1) the substrate temperature is set at 200° C., (2) the film forming is carried out under vacuum water vapor atmosphere, and (3) the laser power is set at 1.1 J/cm2. With this, the threshold voltage Vth can be also so controlled as to be on the order of 0V. Of course, the threshold voltage Vth can be controlled in the same manner in accordance with the above method when Zn2N3 is used as the target for the doping.
  • [0170]
    Such an effect can be also rendered in cases where each of the semiconductor layer 5 shown in FIG. 5, the semiconductor layer 16 of the thin film transistor 11 shown in FIG. 6, the semiconductor layer 16 shown in FIG. 7, the semiconductor layer 26 of the thin film transistor 21 shown in FIG. 9, and the semiconductor layer 26 shown in FIG. 10 is made of a semiconductor containing (i) the polycrystalline ZnO or the polycrystalline MgxZN1-xO; (ii) the amorphous ZnO or the amorphous MgxZN1-xO; or (iii) either the mixture of the polycrystalline ZnO and the amorphous ZnO, or the mixture of the polycrystalline MgxZN1-xO and the amorphous MgxZN1-xO. The semiconductor contains (i) hydrogen, and (ii) nitrogen (N), phosphorus (P), arsenic (As), stibium (Sb), or not less than two of these elements. With this, the threshold voltage Vth can be so controlled as to be on the order of 0 V.
  • Embodiment 5
  • [0171]
    Embodiment 5 of the present invention will be described below with reference to FIG. 12 and FIG. 13. Note that, materials having the equivalent functions as those of the materials of Embodiments 1 through 4 will be given the same reference symbols, and explanation thereof will be omitted here.
  • [0172]
    As shown in FIG. 12, a display device according to the present embodiment is an active matrix type liquid crystal display device, and includes a picture element array 31, a source driver 32, a gate driver 33, a control circuit 34, and a power source circuit 35.
  • [0173]
    The picture element array 31, the source driver 32, and the gate driver 33 are provided on a substrate 36. The substrate 36 is made of an insulative and translucent material such as glass. The picture element array 31 includes source lines SL, gate lines GL, and picture elements 37.
  • [0174]
    Specifically, in the picture element array 31, a large number of gate lines GLj, GLj+1, . . . , are so provided as to cross with a large number of source lines SLi, SLi+1, . . . . Each of the picture elements 37 indicated as “PIX” in FIG. 12 is provided in a portion surrounded by two adjacent gate lines GL and two adjacent source lines SL. As such, the picture elements 37 are formed in a matrix manner in the picture element array 31. One source line SL is provided for each row of the picture elements 37, whereas one gate line GL is provided for each column of the picture elements 37.
  • [0175]
    As shown in FIG. 13, each of the picture elements 37 provided in such a liquid crystal display is made up of a transistor T serving as a switching element, and a picture element capacitor Cp having a liquid crystal capacitor CL. Generally, for attainment of a stable display operation, the picture element capacitor Cp in the active matrix type liquid crystal display includes an auxiliary capacitor Cs provided in parallel with the liquid crystal capacitor CL. The auxiliary capacitor Cs is necessary for restraint of respective influences of (i) respective leakage currents of the liquid crystal capacitor CL and the transistor 7, (ii) a gate-source capacitance of the transistor T, (iii) a picture element potential change caused by a parasite capacitance such as a picture element electrode-signal line capacitance, (iv) display data dependency of the liquid crystal capacitor CL, and the like. With this, the influences are restrained to the minimum.
  • [0176]
    The transistor T has a gate connected to the gate line GLj. Further, each of the liquid crystal capacitor CL and the auxiliary capacitor Cs has an electrode connected to the source line SLj via the drain of the transistor T and the source thereof. The electrode, which is connected to the drain, of the liquid crystal capacitor CL serves as a picture element electrode 37 a. The other electrode of the liquid crystal capacitor CL is connected to a counter electrode with a liquid crystal cell therebetween. Further, the other electrode of the auxiliary capacitor Cs is connected to a common electrode line (not shown) which is shared by all the picture elements, in cases where the display device adopts the Cs-on-Common structure. In cases where the display device adopts the Cs-on-Gate structure, the other electrode of the auxiliary capacitor Cs is connected to an adjacent gate line GL.
  • [0177]
    The gate lines GLj, GLj+1, . . . are connected to the gate driver 33, and the data signal lines SLi, SLi+1, . . . are connected to the source driver 32. The gate driver 33 is driven by different power source voltages VGH and VGL, and the source driver 32 is driven by different power source voltages VSH and VSL.
  • [0178]
    The source driver 32 samples an image signal DAT supplied from the control circuit 34. The sampling is carried out in accordance with a sync signal CKS and a start pulse SPS. Thereafter, the source driver 32 sends the sampled image signal DAT to the source lines SLi, SLi+1, . . . which are respectively connected to the rows of the pixels. The gate driver 33 generates a gate signal in accordance with sync signals CKG and GPS, and a start pulse SPG, each of which is supplied from the control circuit 34. The gate signal thus generated is supplied to the gate lines GLS, GLj−1, . . . which are respectively connected to the columns of the picture elements 37.
  • [0179]
    The power source circuit 35 is a circuit for generating (i) the power source voltages VSH, VSL, VGH, and VGL; (ii) a ground potential COM; and (iii) a voltage VBB. The power source voltages VSH and VSL are voltages whose levels are different, and are supplied to the gate driver 33. The power source voltage VGH and VGL are voltages whose levels are different, and are supplied to the gate driver 33. The ground potential COM is supplied to the common electrode line (not shown) which is provided in the substrate 36.
  • [0180]
    When the transistor T becomes ON in response to receipt of the gate signal from the gate driver 33 via the gate line GLj, the image signal supplied from the source driver 32 via the source line SLi+1 is written in the picture element 37 (picture element electrode 37 a). The transistor T corresponds to each of (i) the thin film transistor 1 shown in FIG. 1( a) and described in Embodiments 1 and 4; (ii) the thin film transistor 11 shown in FIG. 6( a) and described in Embodiment 2; and (iii) the thin film transistor 21 shown in FIG. 9( a) and described in Embodiment 3. Each of the thin film transistors 1, 11, and 21 makes it possible that the threshold voltage Vth is so controlled as to be a voltage practically causing no problem, as described above. An appropriate threshold voltage of the liquid crystal display device arranged as above falls within a range from approximately 0V to approximately 3V. Therefore, in cases where the thin film transistor is applied to such a liquid crystal display device, the threshold voltage can be set appropriately by controlling the doping amount. Therefore, each of the thin film transistors 1, 11, and 21 can be used for the transistor T for driving the picture element 37. This causes practically no problem.
  • [0181]
    Further, each of the thin film transistors 1, 11, and 21 can be used for a transistor of a transistor circuit of circuit elements constituting the source driver 32 and the gate driver 33. This causes practically no problem.
  • [0182]
    Further, when the transistors 1, 11, and 21 are used for the transistor T of the picture element 37 and the transistor of each of the driving circuits, these transistors can be simultaneously manufactured on the substrate 36 in accordance with the same process. This allows reduction of manufacturing processes of the matrix display device. Accordingly, the cost of the matrix display device is reduced.
  • [0183]
    As described above, the threshold voltage is appropriately controlled by using each of the thin film transistors 1, 11, and 21 for the transistor T of the picture element and the transistor of the driving circuits. This makes it possible to provide a matrix display device operating stably.
  • [0184]
    In the above description, the present embodiment and the other embodiments provide the examples; however, the present invention is not limited to the embodiments above, and is applied to any structure formed based on a similar idea.
  • [0185]
    For example, Embodiments 1 through 4 exemplify the transistors 1, 11, and 21. However, the present invention is applicable to a pn connection diode, a Schottky diode, a bipolar transistor, a Shottky barrier electric field effect transistor, a connection type electric field effect transistor, and the like as long as each of the diodes and transistors has a structure in which: an active layer is made of ZNO or MgxZN1-xxO, and a protective layer is provided, and nitrogen or the like is doped to the ZnO in the same manner.
  • [0186]
    Further, Embodiment 5 exemplifies the active matrix type liquid crystal display device serving as an electronic device; however, the present invention is applicable to another display device as long as each of the thin film transistors 1, 11, and 21 is used as a switching element. Examples of the display device include: an organic EL display device, and a flexible display device.
  • [0187]
    Further, the present invention is applicable to an electronic device other than the display device. Examples of such an electronic device include: a line type image scanner, a matrix type image scanner, an X-ray image sensor, and the like, in each of which each of the thin film transistors 1, 11, and 21 is used as a switching element. In such scanner and sensor, the switching element is connected between a picture element electrode and a source line for the purpose of discharging electric charges accumulated in an electric charge accumulation capacitor, and becomes ON upon receipt of a gate voltage (scanning signal) supplied via the gate line. Therefore, a part for reading out each of the image signals can be formed in the scanner and the sensor each including the transistor T as the switching element, by replacing, with the electric charge accumulation capacitor, the liquid crystal capacitor CL and the auxiliary capacitor Cs of the picture element 37 of the liquid crystal display device shown in FIG. 12. In the structure, the source driver 32 is replaced with a circuit to which the image signal is sent from the picture element. Further, the picture elements used in the line type scanner may correspond to one line.
  • [0188]
    The embodiments and concrete examples of implementation discussed in the foregoing detailed explanation serve solely to illustrate the technical details of the present invention, which should not be narrowly interpreted within the limits of such embodiments and concrete examples, but rather may be applied in many variations within the spirit of the present invention, provided such variations do not exceed the scope of the patent claims set forth below.
  • INDUSTRIAL APPLICABILITY
  • [0189]
    A semiconductor device of the present invention has a blocking member such that a layer of ZnO or MgxZn1-xO each sensitive to an atmosphere is blocked from the atmosphere. Further, a group I element, a group III element, a group IV element, a group V element, or a group VII element is added to the ZnO or the MgxZn1-xO. This allows reduction of movable electric charges generated in the active layer by providing the blocking member. The present invention makes it possible to provide a semiconductor device whose element property is stable and is never influenced by the atmosphere, and which uses the ZnO or the MgxZn1-xO by each of which the threshold voltage can be so controlled as to fall within a voltage range allowing for the practical use of the semiconductor device. Further, the semiconductor device is preferably usable for an electronic device such as a display device. CLAIMS

Claims (8)

1. A semiconductor device comprising:
an active layer, to which group I elements, group III elements, group IV elements, group V elements, or group VII elements are added, and which is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZn1-xO, (ii) amorphous ZnO or amorphous MgxZn1-xO, or (iii) either (a) mixture of the polycrystalline ZnO and the amorphous ZnO or (b) a mixture of the polycrystalline MgxZn1-xO and the amorphous MgxZn1-xO;
a blocking member made of a plurality of blocking layers for blocking a region of the active layer from an atmosphere in which region movable electric charges move;
a gate electrode for controlling movement of the movable electric charges in the active layer;
a gate insulating layer, which serves as one of the plurality of blocking layers, for insulating the active layer from the gate electrode;
a source electrode serving as one of the plurality of blocking layers, the source electrode being connected to the active layer; and
a drain electrode serving as one of the plurality of blocking layers, the drain electrode being connected to the active layer,
at least one of the plurality of blocking layers, in addition to the source electrode and the drain electrode and the gate insulating layer, each of the at least one of the plurality of blocking layers being made of SiO2, Al2O3, AIN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, In2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2, or a solid solution containing at least two of them.
2. The semiconductor device as set forth in claim 1, wherein:
the gate insulating layer is made of SiO2, Al2O3, AIN, MgO, Ta2O5, TiO2, ZrO2, stab-ZrO2, CeO2, K2O, Li2O, Na2O, Rb2O, 1n2O3, La2O3, Sc2O3, Y2O3, KNbO3, KTaO3, BaTiO3, CaSnO3, CaZrO3, CdSnO3, SrHfO3, SrSnO3, SrTiO3, YScO3, CaHfO3, MgCeO3, SrCeO3, BaCeO3, SrZrO3, BaZrO3, LiGaO2, a mixed crystal of LiGaO2 such as (Li1-(x+y)NaxKy)(Ga1-zAlz)O2, or a solid solution containing at least two of them.
3. The semiconductor device as set forth in claim 1, wherein:
each of the source electrode and the drain electrode serving as the blocking layers are present in a layer below the active layer.
4. The semiconductor device as set forth in claim 1, wherein:
each of the source electrode and the drain electrode serving as the blocking layers are present in a layer above the active layer.
5. The semiconductor device as set forth in claim 2, wherein:
each of the source electrode and the drain electrode serving as the blocking layers are present in a layer below the active layer.
6. The semiconductor device as set forth in claim 2, wherein:
each of the source electrode and the drain electrode serving as the blocking layers are present in a layer above the active layer.
7. An electronic device comprising the semiconductor device as set forth in any one of claims 1 to 6, provided as a switching element.
8. The electronics device as set forth in claim 7, wherein:
the switching element is connected to a picture element electrode for writing an image signal to the picture element electrode or for reading an image signal from the picture element electrode.
US13072910 2003-06-20 2011-03-28 Semiconductor device, manufacturing method thereof, and electronic device Abandoned US20110175090A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003177272 2003-06-20
JP2003-177272 2003-06-20
JP2004-079273 2004-03-18
JP2004079273A JP4108633B2 (en) 2003-06-20 2004-03-18 Thin film transistor and its manufacturing method, and electronic device
US10560907 US8093589B2 (en) 2003-06-20 2004-06-14 Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
PCT/JP2004/008322 WO2004114391A1 (en) 2003-06-20 2004-06-14 Semiconductor device, its manufacturing method, and electronic device
US13072910 US20110175090A1 (en) 2003-06-20 2011-03-28 Semiconductor device, manufacturing method thereof, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13072910 US20110175090A1 (en) 2003-06-20 2011-03-28 Semiconductor device, manufacturing method thereof, and electronic device
US13365389 US20120132908A1 (en) 2003-06-20 2012-02-03 Semiconductor device, manufacturing method thereof, and electronic device

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US10560907 Division US8093589B2 (en) 2003-06-20 2004-06-14 Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
PCT/JP2004/008322 Division WO2004114391A1 (en) 2003-06-20 2004-06-14 Semiconductor device, its manufacturing method, and electronic device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13365389 Division US20120132908A1 (en) 2003-06-20 2012-02-03 Semiconductor device, manufacturing method thereof, and electronic device

Publications (1)

Publication Number Publication Date
US20110175090A1 true true US20110175090A1 (en) 2011-07-21

Family

ID=33543492

Family Applications (3)

Application Number Title Priority Date Filing Date
US10560907 Active 2024-09-11 US8093589B2 (en) 2003-06-20 2004-06-14 Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
US13072910 Abandoned US20110175090A1 (en) 2003-06-20 2011-03-28 Semiconductor device, manufacturing method thereof, and electronic device
US13365389 Abandoned US20120132908A1 (en) 2003-06-20 2012-02-03 Semiconductor device, manufacturing method thereof, and electronic device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10560907 Active 2024-09-11 US8093589B2 (en) 2003-06-20 2004-06-14 Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13365389 Abandoned US20120132908A1 (en) 2003-06-20 2012-02-03 Semiconductor device, manufacturing method thereof, and electronic device

Country Status (5)

Country Link
US (3) US8093589B2 (en)
JP (1) JP4108633B2 (en)
KR (1) KR100745254B1 (en)
CN (1) CN101916785B (en)
WO (1) WO2004114391A1 (en)

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080308806A1 (en) * 2005-09-29 2008-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US20100072471A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110127521A1 (en) * 2009-11-28 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8703531B2 (en) 2010-03-05 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
US20140117348A1 (en) * 2012-10-25 2014-05-01 Shenzhen China Star Optoelectronics Technology Co. Ltd. Active-matrix Panel Display Device, TFT and Method for Forming the Same
US8728883B2 (en) 2010-11-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8772768B2 (en) 2010-12-28 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
US8785990B2 (en) 2005-10-14 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first and second or drain electrodes and manufacturing method thereof
US8822990B2 (en) 2009-07-31 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841710B2 (en) 2008-07-31 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8853697B2 (en) 2012-03-01 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059295B2 (en) 2010-04-02 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having an oxide semiconductor and metal oxide films
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9117919B2 (en) 2010-09-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9136390B2 (en) 2008-12-26 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9202877B2 (en) 2010-04-23 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9240488B2 (en) 2009-12-18 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9263589B2 (en) 2010-05-21 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9318613B2 (en) 2010-04-02 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Transistor having two metal oxide films and an oxide semiconductor film
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US9406786B2 (en) 2010-03-26 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443934B2 (en) 2013-09-19 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9449991B2 (en) 2010-07-02 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having circular light-blocking layer
US9647137B2 (en) 2008-10-24 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
US9755082B2 (en) 2010-06-11 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor with an insulating film including galliium and oxygen
US9773810B2 (en) 2011-04-29 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9799666B2 (en) 2010-02-19 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9818850B2 (en) 2011-01-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
US9837552B2 (en) 2013-05-20 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9842863B2 (en) 2012-11-28 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device

Families Citing this family (1657)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7635889B2 (en) 2005-01-28 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
JP2006269469A (en) * 2005-03-22 2006-10-05 Casio Comput Co Ltd Thin-film transistor and manufacturing method thereof
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US7928938B2 (en) * 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
JP2006344849A (en) 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7679585B2 (en) 2005-06-30 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
US9318053B2 (en) 2005-07-04 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7859488B2 (en) 2005-08-12 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device equipped with the semiconductor device
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP4958253B2 (en) * 2005-09-02 2012-06-20 カシオ計算機株式会社 Thin film transistor
JP2007073561A (en) * 2005-09-02 2007-03-22 Casio Comput Co Ltd Thin-film transistor
JP4560502B2 (en) 2005-09-06 2010-10-13 キヤノン株式会社 Field-effect transistor
CN101258607B (en) * 2005-09-06 2011-01-05 佳能株式会社 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous
KR100729043B1 (en) * 2005-09-14 2007-06-14 삼성에스디아이 주식회사 Transparent Thin Film Transistor and Fabrication Method for the same
EP1764770A3 (en) 2005-09-16 2012-03-14 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of display device
WO2007034935A1 (en) 2005-09-21 2007-03-29 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
JP5064747B2 (en) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, an electrophoretic display device, a display module, a manufacturing method of an electronic device, and semiconductor device
JP4907942B2 (en) * 2005-09-29 2012-04-04 シャープ株式会社 Transistors and electronic devices
JP5427340B2 (en) * 2005-10-14 2014-02-26 株式会社半導体エネルギー研究所 Semiconductor device
JP2007115735A (en) * 2005-10-18 2007-05-10 Toppan Printing Co Ltd Transistor
JP2007115807A (en) * 2005-10-19 2007-05-10 Toppan Printing Co Ltd Transistor
JP2007115808A (en) * 2005-10-19 2007-05-10 Toppan Printing Co Ltd Transistor
JP4560505B2 (en) * 2005-11-08 2010-10-13 キヤノン株式会社 Field-effect transistor
KR101050767B1 (en) 2005-11-15 2011-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing a semiconductor device
JP5099740B2 (en) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター Thin film transistor
US7314801B2 (en) * 2005-12-20 2008-01-01 Palo Alto Research Center Incorporated Semiconductor device having a surface conducting channel and method of forming
US7821613B2 (en) 2005-12-28 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
CN101395617B (en) 2006-03-10 2012-05-30 株式会社半导体能源研究所 Semiconductor device and method for operating the same
JP5110803B2 (en) 2006-03-17 2012-12-26 キヤノン株式会社 Field effect transistors and a manufacturing method thereof using an oxide film in a channel
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
KR100785038B1 (en) 2006-04-17 2007-12-12 삼성전자주식회사 Amorphous ZnO based Thin Film Transistor
US7692223B2 (en) 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same
JP5228295B2 (en) * 2006-07-21 2013-07-03 カシオ計算機株式会社 A method of manufacturing a semiconductor device
US8222076B2 (en) * 2006-08-02 2012-07-17 Xerox Corporation Fabricating amorphous zinc oxide semiconductor layer
JP4609797B2 (en) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
KR101257928B1 (en) * 2006-08-18 2013-04-24 엘지디스플레이 주식회사 Thin film transistot and fabrication method of the same
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5116277B2 (en) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 A semiconductor device, a display device, a liquid crystal display device, the display module and an electronic device
KR100829570B1 (en) * 2006-10-20 2008-05-14 삼성전자주식회사 Thin film transistor for cross-point memory and manufacturing method for the same
US7646015B2 (en) 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5305630B2 (en) * 2006-12-05 2013-10-02 キヤノン株式会社 Method of manufacturing a bottom-gate thin film transistor manufacturing method and a display device
US8143115B2 (en) * 2006-12-05 2012-03-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
WO2008069255A1 (en) * 2006-12-05 2008-06-12 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
KR100787464B1 (en) * 2007-01-08 2007-12-26 삼성에스디아이 주식회사 Transparent thin film transistor, and method of manufacturing the same
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR101509663B1 (en) 2007-02-16 2015-04-06 삼성전자주식회사 An oxide semiconductor layer formation method and a method of manufacturing a semiconductor device using the same
JP5320746B2 (en) * 2007-03-28 2013-10-23 凸版印刷株式会社 Thin film transistor
KR101334181B1 (en) 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
JP5215589B2 (en) * 2007-05-11 2013-06-19 キヤノン株式会社 Insulated gate transistor and a display device
KR101345378B1 (en) * 2007-05-17 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
JP5542297B2 (en) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 The liquid crystal display device, the display module and an electronic device
JP4989309B2 (en) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 The liquid crystal display device
JP5294651B2 (en) * 2007-05-18 2013-09-18 キヤノン株式会社 The inverter of the manufacturing method, and an inverter
JP5361249B2 (en) * 2007-05-31 2013-12-04 キヤノン株式会社 Manufacturing method of a thin film transistor including an oxide semiconductor
US7935964B2 (en) * 2007-06-19 2011-05-03 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
CN101681925B (en) 2007-06-19 2011-11-30 三星电子株式会社 And the oxide semiconductor thin film transistor comprises the oxide semiconductor
KR101402189B1 (en) * 2007-06-22 2014-06-02 삼성전자주식회사 Oxide thin film transistor and etchant of Zn oxide
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US20090081356A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Process for forming thin film encapsulation layers
US20090079328A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Thin film encapsulation containing zinc oxide
US7851380B2 (en) * 2007-09-26 2010-12-14 Eastman Kodak Company Process for atomic layer deposition
US7858144B2 (en) * 2007-09-26 2010-12-28 Eastman Kodak Company Process for depositing organic materials
JP5354999B2 (en) * 2007-09-26 2013-11-27 キヤノン株式会社 A method of manufacturing a field-effect transistor
JP4759598B2 (en) * 2007-09-28 2011-08-31 キヤノン株式会社 TFT, a manufacturing method and a display device using the same
US8258021B2 (en) * 2007-10-26 2012-09-04 Palo Alto Research Center Incorporated Protecting semiconducting oxides
US7768008B2 (en) 2007-11-13 2010-08-03 Toppan Printing Co., Ltd. Thin film transistor, method for manufacturing the same and display using the same
JP5213421B2 (en) * 2007-12-04 2013-06-19 キヤノン株式会社 Oxide semiconductor thin film transistor
JP5213422B2 (en) * 2007-12-04 2013-06-19 キヤノン株式会社 Oxide semiconductor device and a display device using the same having an insulating layer
JP5213458B2 (en) 2008-01-08 2013-06-19 キヤノン株式会社 Amorphous oxide and field effect transistor
EP2245260B1 (en) * 2008-01-24 2013-09-25 Well Technology AS Device and method for isolating a section of a wellbore
DE112009000012B4 (en) * 2008-03-13 2014-11-13 Murata Manufacturing Co., Ltd. Glass ceramic composition, glass ceramic sintered body and the ceramic multi-layer electronic component
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
JP5063433B2 (en) * 2008-03-26 2012-10-31 富士フイルム株式会社 Display device
JP5073544B2 (en) * 2008-03-26 2012-11-14 富士フイルム株式会社 Display device
KR101496148B1 (en) 2008-05-15 2015-02-27 삼성전자주식회사 Semiconductor device and method of manufacturing the same
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR101468591B1 (en) * 2008-05-29 2014-12-04 삼성전자주식회사 And the oxide semiconductor thin film transistor comprising the same
KR20090126766A (en) 2008-06-05 2009-12-09 삼성전자주식회사 Thin film transistor panel
JP2009302352A (en) * 2008-06-13 2009-12-24 Brother Ind Ltd Oxide thin film transistor and method for manufacturing the same
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR100963026B1 (en) * 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
KR100963027B1 (en) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
KR100963104B1 (en) * 2008-07-08 2010-06-14 삼성모바일디스플레이주식회사 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
KR101656843B1 (en) 2008-07-10 2016-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and electronic device using the same
CN101625977B (en) 2008-07-11 2011-08-31 中华映管股份有限公司 Method for manufacturing film transistor
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8129717B2 (en) 2008-07-31 2012-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5616038B2 (en) 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP5588637B2 (en) 2008-07-31 2014-09-10 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
JP5608347B2 (en) * 2008-08-08 2014-10-15 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
JP5480554B2 (en) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 Semiconductor device
US8115201B2 (en) 2008-08-08 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor formed within
JP5525778B2 (en) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 Semiconductor device
US8343817B2 (en) 2008-08-08 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20100023151A (en) * 2008-08-21 2010-03-04 삼성모바일디스플레이주식회사 Thin film transistor and fabricating method thereof
US8021916B2 (en) 2008-09-01 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5627071B2 (en) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP5339825B2 (en) * 2008-09-09 2013-11-13 富士フイルム株式会社 Thin film field effect transistor and a display device using the same
KR20170097235A (en) * 2008-09-12 2017-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2010029885A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2010029859A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101622981B1 (en) 2008-09-19 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method of the same
CN103545342B (en) 2008-09-19 2018-01-26 株式会社半导体能源研究所 The semiconductor device
KR101803264B1 (en) 2008-09-19 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
EP2421030A3 (en) 2008-09-19 2015-05-27 Semiconductor Energy Laboratory Co. Ltd. Display device
KR101611643B1 (en) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101659925B1 (en) 2008-10-03 2016-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101761108B1 (en) 2008-10-03 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN103928476A (en) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 Display Device And Method For Manufacturing The Same
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
JP5552753B2 (en) * 2008-10-08 2014-07-16 ソニー株式会社 Thin film transistor and a display device
CN101719493B (en) 2008-10-08 2014-05-14 株式会社半导体能源研究所 The display device
JP5484853B2 (en) 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2010044478A1 (en) 2008-10-16 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
JP5361651B2 (en) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
CN102187467A (en) * 2008-10-23 2011-09-14 出光兴产株式会社 Thin film transistor and method for manufacturing same
US8741702B2 (en) * 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101259727B1 (en) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
EP2180518A3 (en) 2008-10-24 2010-05-12 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR101667909B1 (en) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method of manufacturing a semiconductor device
JP5616012B2 (en) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101603303B1 (en) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Conductive oxynitride and method for manufacturing conductive oxynitride film
WO2010050419A1 (en) 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
KR101631454B1 (en) * 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit
US8426868B2 (en) 2008-10-31 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103730509A (en) 2008-11-07 2014-04-16 株式会社半导体能源研究所 Semiconductor device
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
US8395148B2 (en) 2008-11-07 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5631574B2 (en) 2008-11-07 2014-11-26 株式会社半導体エネルギー研究所 Semiconductor device
CN101740631B (en) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the semiconductor device
KR101477593B1 (en) 2008-11-07 2014-12-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method of manufacturing a semiconductor device
US8058647B2 (en) 2008-11-13 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101432764B1 (en) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20100056970A (en) 2008-11-20 2010-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101671660B1 (en) 2008-11-21 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic device
US9450133B2 (en) 2008-11-28 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Photosensor and display device
US8344387B2 (en) 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8441425B2 (en) * 2008-11-28 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2010064590A1 (en) 2008-12-01 2010-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101551305B1 (en) 2008-12-03 2015-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A liquid crystal display device
JP5491833B2 (en) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 Semiconductor device
US8610652B2 (en) 2008-12-12 2013-12-17 Samsung Electronics Co., Ltd. Display apparatuses and methods of operating the same
WO2010071034A1 (en) 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP5615540B2 (en) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
EP2202802B1 (en) * 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US8383470B2 (en) 2008-12-25 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor (TFT) having a protective layer and manufacturing method thereof
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5590877B2 (en) * 2008-12-26 2014-09-17 株式会社半導体エネルギー研究所 Semiconductor device
KR101064402B1 (en) * 2009-01-12 2011-09-14 삼성모바일디스플레이주식회사 Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
KR101648927B1 (en) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8686528B2 (en) 2009-02-04 2014-04-01 Sharp Kabushiki Kaisha Semiconductor device
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8749930B2 (en) 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8278657B2 (en) 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (en) 2009-02-13 2014-10-08 株式会社半导体能源研究所 A semiconductor device and a manufacturing method of a transistor
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101671210B1 (en) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20170061190A (en) 2009-03-12 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8936963B2 (en) 2009-03-13 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101681884B1 (en) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
KR101752640B1 (en) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9012918B2 (en) 2009-03-27 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor
US8927981B2 (en) 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100252832A1 (en) 2009-04-02 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5455753B2 (en) 2009-04-06 2014-03-26 株式会社半導体エネルギー研究所 Ic card
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5624351B2 (en) 2009-04-16 2014-11-12 株式会社半導体エネルギー研究所 Semiconductor device
KR20150052328A (en) * 2009-05-01 2015-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5751762B2 (en) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 Semiconductor device
JP5396335B2 (en) 2009-05-28 2014-01-22 株式会社半導体エネルギー研究所 Touch panel
EP2256795B1 (en) 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JP5564331B2 (en) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
EP2256814A1 (en) 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR101578694B1 (en) * 2009-06-02 2015-12-21 엘지디스플레이 주식회사 The method of an oxide thin film transistor
KR101645061B1 (en) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101457837B1 (en) 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20180000737A (en) * 2009-06-30 2018-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20170049621A (en) 2009-06-30 2017-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
JP5663214B2 (en) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
KR101476817B1 (en) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including transistor and manufacturing method thereof
KR20120046222A (en) 2009-07-03 2012-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101460868B1 (en) 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101801500B1 (en) 2009-07-10 2017-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011004724A1 (en) 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011007682A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2011007677A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120117723A (en) 2009-07-18 2012-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
CN105070749A (en) 2009-07-18 2015-11-18 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
WO2011010541A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010546A1 (en) 2009-07-24 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011013522A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20120051720A (en) 2009-07-31 2012-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101689725B1 (en) 2009-08-07 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8502220B2 (en) 2009-08-07 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629441B2 (en) * 2009-08-07 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5663231B2 (en) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 The light-emitting device
EP2284891A3 (en) 2009-08-07 2015-10-07 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5642447B2 (en) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 Semiconductor device
KR101760241B1 (en) 2009-08-07 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) * 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
CN105449119A (en) 2009-09-04 2016-03-30 株式会社半导体能源研究所 Luminescence device and manufacture method thereof
KR20120050513A (en) 2009-09-04 2012-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN102484140B (en) 2009-09-04 2015-04-22 株式会社半导体能源研究所 Manufacturing method of semiconductor device
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5700626B2 (en) * 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 El display device
KR101746198B1 (en) * 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101700470B1 (en) * 2009-09-16 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device including the driver circuit, and electronic device including the display device
WO2011034012A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
CN102498553B (en) * 2009-09-16 2016-03-02 株式会社半导体能源研究所 Transistor and a display device
KR20170131713A (en) 2009-09-16 2017-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and manufacturing method thereof
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR101740943B1 (en) 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
CN102576677B (en) 2009-09-24 2015-07-22 株式会社半导体能源研究所 Semiconductor element and method for manufacturing the same
CN105513644A (en) 2009-09-24 2016-04-20 株式会社半导体能源研究所 Driver circuit, display device including the driver circuit, and electronic appliance including the display device
WO2011037213A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101810383B1 (en) 2009-09-24 2017-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
CN102549758B (en) 2009-09-24 2015-11-25 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
KR101707260B1 (en) * 2009-09-24 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101811197B1 (en) 2009-09-24 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, power circuit, and manufacturing method of semiconductor device
WO2011040349A1 (en) * 2009-09-30 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Redox capacitor and manufacturing method thereof
WO2011040213A1 (en) * 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
WO2011043203A1 (en) 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
KR20160063404A (en) * 2009-10-08 2016-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer, semiconductor device and manufacturing method thereof
WO2011043162A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
CN102598278B (en) * 2009-10-09 2015-04-08 株式会社半导体能源研究所 Semiconductor device
KR20170104665A (en) 2009-10-09 2017-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting display device and electronic device including the same
KR101424950B1 (en) 2009-10-09 2014-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
CN107180608A (en) * 2009-10-09 2017-09-19 株式会社半导体能源研究所 A shift register and a display device and a driving method thereof
WO2011043218A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102576737B (en) 2009-10-09 2015-10-21 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
WO2011043451A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device
WO2011043164A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101680047B1 (en) 2009-10-14 2016-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and the manufacturing method
EP3244394A1 (en) * 2009-10-16 2017-11-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same
KR20170098992A (en) 2009-10-16 2017-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011046015A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR20170063999A (en) 2009-10-16 2017-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit and semiconductor device
WO2011046010A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101803554B1 (en) 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5730529B2 (en) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 Semiconductor device
KR20170119735A (en) 2009-10-21 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Analog circuit and semiconductor device
WO2011048959A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120096463A (en) 2009-10-21 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including display device
WO2011048968A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101801959B1 (en) 2009-10-21 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the same
CN102598247B (en) 2009-10-29 2015-05-06 株式会社半导体能源研究所 Semiconductor device
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011052368A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
KR101752348B1 (en) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102576708B (en) 2009-10-30 2015-09-23 株式会社半导体能源研究所 The semiconductor device
CN102576172B (en) 2009-10-30 2016-01-27 株式会社半导体能源研究所 The liquid crystal display apparatus, driving method and an electronic appliance comprising the liquid crystal display device
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR20170068636A (en) * 2009-10-30 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011052413A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device, and electronic device
EP2494692B1 (en) 2009-10-30 2016-11-23 Semiconductor Energy Laboratory Co. Ltd. Logic circuit and semiconductor device
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
CN102668095B (en) * 2009-10-30 2016-08-03 株式会社半导体能源研究所 Transistor
KR20120116403A (en) * 2009-11-06 2012-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Touch panel and driving method of touch panel
WO2011055644A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120093952A (en) * 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
KR20170089033A (en) 2009-11-06 2017-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP5539846B2 (en) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 Evaluation method, a method for manufacturing a semiconductor device
KR101605984B1 (en) 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101727469B1 (en) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display
CN102598269B (en) 2009-11-06 2015-04-01 株式会社半导体能源研究所 Semiconductor device
CN102598279B (en) 2009-11-06 2015-10-07 株式会社半导体能源研究所 The semiconductor device
KR101753927B1 (en) 2009-11-06 2017-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20170086681A (en) 2009-11-06 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011055631A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20120102682A (en) 2009-11-06 2012-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102598095B (en) 2009-11-13 2016-02-10 株式会社半导体能源研究所 A display device and an electronic device comprising a display device
KR101751560B1 (en) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101721850B1 (en) 2009-11-13 2017-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101738996B1 (en) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Device including nonvolatile memory element
WO2011058866A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20110053192A (en) 2009-11-13 2011-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for packaging target material and method for mounting target
WO2011058882A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR101370301B1 (en) 2009-11-20 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011062058A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2502272B1 (en) 2009-11-20 2015-04-15 Semiconductor Energy Laboratory Co. Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101759493B1 (en) * 2009-11-20 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
JP5866089B2 (en) 2009-11-20 2016-02-17 株式会社半導体エネルギー研究所 Electronics
KR101800854B1 (en) * 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
WO2011062057A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101790365B1 (en) 2009-11-20 2017-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101708607B1 (en) 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20170117208A (en) 2009-11-20 2017-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101448908B1 (en) * 2009-11-20 2014-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5762723B2 (en) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 Modulation circuit and semiconductor device including the same
KR101662359B1 (en) * 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device including memory cell
WO2011065198A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20170132358A (en) * 2009-11-27 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011065208A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR101396015B1 (en) 2009-11-28 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011065244A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2507787A4 (en) * 2009-11-30 2013-07-17 Semiconductor Energy Lab Liquid crystal display device, method for driving the same, and electronic device including the same
KR101623961B1 (en) * 2009-12-02 2016-05-26 삼성전자주식회사 Transistor, method of manufacturing the same and electronic device comprising transistor
KR20120092688A (en) 2009-12-04 2012-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
KR20120107107A (en) 2009-12-04 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5584103B2 (en) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 Semiconductor device
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120099475A (en) 2009-12-04 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20120094091A (en) 2009-12-04 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
EP2507823A4 (en) 2009-12-04 2014-05-14 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US8432718B2 (en) * 2009-12-04 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011068106A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
KR101800038B1 (en) 2009-12-04 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20120089763A (en) 2009-12-04 2012-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20120092696A (en) 2009-12-08 2012-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20120106786A (en) 2009-12-08 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011070902A1 (en) 2009-12-10 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101481398B1 (en) * 2009-12-11 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Latch circuit and cpu
CN102656683B (en) 2009-12-11 2015-02-11 株式会社半导体能源研究所 The semiconductor device
WO2011070887A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5727204B2 (en) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2011070901A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20110069454A (en) * 2009-12-17 2011-06-23 한국전자통신연구원 Thin film transistors and methods of forming the same
WO2011074590A1 (en) * 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
KR101813460B1 (en) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102725784B (en) 2009-12-18 2016-03-23 株式会社半导体能源研究所 Having a display device and a driving method for an optical sensor
KR101768433B1 (en) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20170087963A (en) 2009-12-18 2017-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and driving method thereof
WO2011074408A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
EP2513894A4 (en) 2009-12-18 2014-12-17 Semiconductor Energy Lab Method for driving liquid crystal display device
CN102667910B (en) 2009-12-18 2015-11-25 株式会社半导体能源研究所 The liquid crystal display device and the electronic device
CN105429621A (en) * 2009-12-23 2016-03-23 株式会社半导体能源研究所 The semiconductor device
KR20120101716A (en) 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
KR101125567B1 (en) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 Polymer substrate and method of manufacturing the same and display device including the polymer substrate and method of manufacturing the display device
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011077925A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
CN105590646A (en) 2009-12-25 2016-05-18 株式会社半导体能源研究所 Memory Device, Semiconductor Device, And Electronic Device
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2517245A4 (en) 2009-12-25 2014-01-01 Semiconductor Energy Lab Semiconductor device
WO2011077966A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011077967A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
CN105702631A (en) 2009-12-28 2016-06-22 株式会社半导体能源研究所 Semiconductor device
WO2011081000A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8389310B2 (en) * 2009-12-28 2013-03-05 E Ink Holdings Inc. Method for manufacturing oxide thin film transistor and method for manufacturing display device
KR101436120B1 (en) 2009-12-28 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8759917B2 (en) * 2010-01-04 2014-06-24 Samsung Electronics Co., Ltd. Thin-film transistor having etch stop multi-layer and method of manufacturing the same
KR20120099483A (en) 2010-01-15 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR20120109622A (en) * 2010-01-15 2012-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN102725841B (en) * 2010-01-15 2016-10-05 株式会社半导体能源研究所 Semiconductor device
WO2011086837A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2011086871A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101798367B1 (en) 2010-01-15 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101803987B1 (en) 2010-01-20 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR20170119749A (en) 2010-01-20 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electronic device
WO2011089842A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
CN102714496B (en) 2010-01-20 2016-06-29 株式会社半导体能源研究所 The semiconductor device
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR20120127601A (en) 2010-01-20 2012-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Signal processing circuit and method for driving the same
CN102714029B (en) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 Display device a display
CN102713999B (en) * 2010-01-20 2016-01-20 株式会社半导体能源研究所 Electronic equipment and electronic systems
WO2011089832A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
WO2011089843A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
WO2011089846A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120116493A (en) 2010-01-22 2012-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device and driving method thereof
WO2011089841A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20170137213A (en) 2010-01-24 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
CN106057162A (en) 2010-01-24 2016-10-26 株式会社半导体能源研究所 The display device
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101800850B1 (en) 2010-01-29 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN102725842B (en) * 2010-02-05 2014-12-03 株式会社半导体能源研究所 Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20120123524A (en) 2010-02-05 2012-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011096264A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR20120125320A (en) * 2010-02-05 2012-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of driving semiconductor device
KR101791713B1 (en) 2010-02-05 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and semiconductor device
KR20120117915A (en) 2010-02-05 2012-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20150010776A (en) 2010-02-05 2015-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105405747A (en) 2010-02-05 2016-03-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
KR101810261B1 (en) 2010-02-10 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102754209B (en) 2010-02-12 2015-11-25 株式会社半导体能源研究所 A semiconductor device and a driving method
KR20120135406A (en) 2010-02-12 2012-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
KR101817054B1 (en) 2010-02-12 2018-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device including the same
WO2011099389A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
KR20180001594A (en) * 2010-02-12 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and driving method
KR101775180B1 (en) 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR20130036187A (en) 2010-02-12 2013-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011099376A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011102227A1 (en) 2010-02-18 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR20120135412A (en) * 2010-02-19 2012-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
WO2011102228A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
JP5740169B2 (en) * 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 A method for manufacturing a transistor
KR101780748B1 (en) 2010-02-19 2017-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Demodulation circuit and rfid tag including the demodulatiion circuit
WO2011102233A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105826363A (en) * 2010-02-19 2016-08-03 株式会社半导体能源研究所 Semiconductor device and method for manufacturing same
WO2011102248A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR20120135410A (en) 2010-02-19 2012-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101773984B1 (en) 2010-02-19 2017-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and method for driving display device
KR20120138770A (en) 2010-02-19 2012-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and display device using the same
CN105788645A (en) 2010-02-23 2016-07-20 株式会社半导体能源研究所 Display device, semiconductor device, and driving method thereof
CN102763203B (en) * 2010-02-26 2016-10-26 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
CN102782859B (en) 2010-02-26 2015-07-29 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
WO2011105218A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and e-book reader provided therewith
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN107045235A (en) 2010-02-26 2017-08-15 株式会社半导体能源研究所 Display device
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102770902B (en) 2010-02-26 2016-11-23 株式会社半导体能源研究所 The display apparatus and driving method thereof
WO2011105183A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105245218A (en) 2010-03-02 2016-01-13 株式会社半导体能源研究所 Pulse signal output circuit and the shift register
KR20170126520A (en) 2010-03-02 2017-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Pulse signal output circuit and shift register
KR101767037B1 (en) 2010-03-02 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Boosting circuit and rfid tag including boosting circuit
WO2011108678A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
WO2011108475A1 (en) * 2010-03-04 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
WO2011108381A1 (en) 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011108382A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130027012A (en) 2010-03-08 2013-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
WO2011111504A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
EP2365417A3 (en) * 2010-03-08 2015-04-29 Semiconductor Energy Laboratory Co, Ltd. Electronic device and electronic system
KR101784676B1 (en) 2010-03-08 2017-10-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011111522A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106449649A (en) 2010-03-08 2017-02-22 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
KR20130007597A (en) * 2010-03-08 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011111508A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving input circuit and method for driving input-output device
US8900362B2 (en) * 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN102804380B (en) 2010-03-12 2015-11-25 株式会社半导体能源研究所 The semiconductor device
WO2011111507A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE112011100886T5 (en) 2010-03-12 2012-12-27 Semiconductor Energy Laboratory Co., Ltd. A driving method of display device
CN102194889A (en) * 2010-03-15 2011-09-21 佳能株式会社 Semiconductor device and method for manufacturing the same
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20110227082A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114867A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
KR20130057423A (en) * 2010-03-19 2013-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN102812547B (en) 2010-03-19 2015-09-09 株式会社半导体能源研究所 The semiconductor device
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118351A1 (en) 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130062919A (en) 2010-03-26 2013-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011118364A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5731244B2 (en) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
KR20130069583A (en) 2010-03-31 2013-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field-sequential display device
KR101761966B1 (en) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power supply device and driving method thereof
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
CN102884477B (en) 2010-03-31 2015-11-25 株式会社半导体能源研究所 The liquid crystal display device and a driving method
CN102844873B (en) 2010-03-31 2015-06-17 株式会社半导体能源研究所 The semiconductor display device
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US9196739B2 (en) * 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
KR101706081B1 (en) * 2010-04-06 2017-02-15 삼성디스플레이 주식회사 Thin film transistor, method for manufacturing the same, and liquid crystal display including this
KR20130042486A (en) 2010-04-07 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN102918650B (en) 2010-04-07 2017-03-22 株式会社半导体能源研究所 Transistor
WO2011125454A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
DE112011101260T5 (en) 2010-04-09 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. A liquid crystal display device and method for driving the same
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
JP5744366B2 (en) 2010-04-12 2015-07-08 株式会社半導体エネルギー研究所 The liquid crystal display device
WO2011129209A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
WO2011129456A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
KR20130056240A (en) 2010-04-16 2013-05-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102859704B (en) 2010-04-23 2016-08-03 株式会社半导体能源研究所 A method of manufacturing a semiconductor device
CN104851810A (en) 2010-04-23 2015-08-19 株式会社半导体能源研究所 Method for manufacturing semiconductor device
WO2011132555A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
CN102859705B (en) 2010-04-23 2015-12-09 株式会社半导体能源研究所 The method of manufacturing a semiconductor device and a semiconductor device
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130055607A (en) 2010-04-23 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130059350A (en) 2010-04-28 2013-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor display device and driving method the same
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (en) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 Evaluation method of a semiconductor device
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101806271B1 (en) 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8406038B2 (en) 2010-05-14 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
JP5923248B2 (en) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 Semiconductor device
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011145632A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR20130082091A (en) 2010-05-21 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101808198B1 (en) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5852793B2 (en) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 Method for manufacturing a liquid crystal display device
WO2011145706A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5766012B2 (en) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 The liquid crystal display device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5714973B2 (en) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 Semiconductor device
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
JP5749975B2 (en) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 Photodetector, and a touch panel
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
KR20130079450A (en) 2010-06-04 2013-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20110133251A (en) 2010-06-04 2011-12-12 삼성전자주식회사 Thin film transistor array panel and manufacturing method of the same
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155125A1 (en) * 2010-06-08 2011-12-15 シャープ株式会社 Thin film transistor substrate, liquid crystal display device provided with same, and thin film transistor substrate production method
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
DE112011101969T5 (en) 2010-06-11 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
JP5797471B2 (en) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 Input and output devices
US9209314B2 (en) * 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5823740B2 (en) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 Input and output devices
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
WO2011158703A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR20120000499A (en) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and semiconductor device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
WO2012002236A1 (en) 2010-06-29 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9473714B2 (en) 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
KR101801960B1 (en) 2010-07-01 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of liquid crystal display device
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9224339B2 (en) 2010-07-02 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130030295A (en) 2010-07-02 2013-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
WO2012002197A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5792524B2 (en) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 apparatus
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130043162A (en) 2010-07-16 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5917035B2 (en) 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 Semiconductor device
JP5836680B2 (en) 2010-07-27 2015-12-24 株式会社半導体エネルギー研究所 A semiconductor device and a manufacturing method thereof
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5777964B2 (en) 2010-07-28 2015-09-16 株式会社半導体エネルギー研究所 Semiconductor device
JP5846789B2 (en) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
KR20120023523A (en) 2010-08-04 2012-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
JP5739257B2 (en) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5832181B2 (en) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 The liquid crystal display device
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8614916B2 (en) 2010-08-06 2013-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2012017844A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
JP5671418B2 (en) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
CN103069717A (en) 2010-08-06 2013-04-24 株式会社半导体能源研究所 The semiconductor integrated circuit
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20120032171A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5743790B2 (en) 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 Semiconductor device
JP5848912B2 (en) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 The control circuit of the liquid crystal display device, a liquid crystal display device, and electronic device including the liquid crystal display device
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
US8748224B2 (en) 2010-08-16 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8823082B2 (en) 2010-08-19 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
JP5727892B2 (en) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 Semiconductor device
US8787073B2 (en) 2010-08-26 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
JP5674594B2 (en) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 The driving method of a semiconductor device and a semiconductor device
WO2012026503A1 (en) 2010-08-27 2012-03-01 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5806043B2 (en) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
KR20120020073A (en) 2010-08-27 2012-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method for designing a semiconductor
JP5763474B2 (en) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 Light sensor
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
KR20130099074A (en) 2010-09-03 2013-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target and method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2012029674A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8674972B2 (en) 2010-09-08 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832204B2 (en) 2010-09-10 2015-12-16 株式会社半導体エネルギー研究所 Display system
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120028225A (en) 2010-09-13 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
JP5827520B2 (en) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 A semiconductor memory device
JP5815337B2 (en) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 Semiconductor device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
KR20120028231A (en) 2010-09-13 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
KR20130119421A (en) 2010-09-13 2013-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
KR20120028229A (en) 2010-09-13 2012-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5696009B2 (en) 2010-09-14 2015-04-08 株式会社半導体エネルギー研究所 Semiconductor device
US9368053B2 (en) 2010-09-15 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2012035975A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101426515B1 (en) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device
KR20120031127A (en) 2010-09-22 2012-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power-insulated-gate field-effect transistor
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
KR20120033244A (en) 2010-09-29 2012-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device and method for driving the same
US8553447B2 (en) 2010-10-05 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
US8599604B2 (en) 2010-10-25 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
KR20120046023A (en) 2010-10-29 2012-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
KR20130142109A (en) 2010-10-29 2013-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Storage device
JP5771505B2 (en) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 Reception circuit
US8871304B2 (en) 2010-11-02 2014-10-28 Ube Industries, Ltd. (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6010291B2 (en) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 Method of driving a display device
US9299851B2 (en) 2010-11-05 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
CN103201831B (en) 2010-11-05 2015-08-05 株式会社半导体能源研究所 The semiconductor device
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
KR20130139260A (en) 2010-11-05 2013-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5668917B2 (en) * 2010-11-05 2015-02-12 ソニー株式会社 Thin film transistor and a manufacturing method thereof
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
US8802515B2 (en) 2010-11-11 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5770068B2 (en) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 Semiconductor device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629496B2 (en) * 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE112011104002T5 (en) 2010-12-03 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor and semiconductor device
US8705267B2 (en) 2010-12-03 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, method for driving the same, and semiconductor device
JP5908263B2 (en) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Dc-dc converter
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
US8658448B2 (en) 2010-12-10 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP2012256020A (en) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method for the same
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9424923B2 (en) 2010-12-17 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
JP6030298B2 (en) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 Buffer storage device and the signal processing circuit
JP5852874B2 (en) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 Semiconductor device
JP5973165B2 (en) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9287294B2 (en) 2010-12-28 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device having oxide semiconductor
JP5864054B2 (en) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 Semiconductor device
WO2012090974A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5993141B2 (en) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 Storage device
JP5256339B2 (en) 2011-01-05 2013-08-07 株式会社半導体エネルギー研究所 Storage device
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8785266B2 (en) 2011-01-12 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5836132B2 (en) 2011-01-12 2015-12-24 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8811064B2 (en) 2011-01-14 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including multilayer wiring layer
JP5859839B2 (en) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 The driving method of the memory element, and a storage element
KR20120082815A (en) 2011-01-14 2012-07-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and detecting method
JP5897910B2 (en) 2011-01-20 2016-04-06 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8809992B2 (en) * 2011-01-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5798933B2 (en) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 Signal processing circuit
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9209092B2 (en) 2011-01-26 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a wide-gap semiconductor layer on inner wall of trench
CN103348464B (en) 2011-01-26 2016-01-13 株式会社半导体能源研究所 Semiconductor device and manufacturing method
US8865555B2 (en) 2011-01-26 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8773906B2 (en) 2011-01-27 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
KR20130140824A (en) 2011-01-27 2013-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
DE112012000601T5 (en) 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. A method of manufacturing a semiconductor device and semiconductor device
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8809927B2 (en) 2011-02-02 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US9167234B2 (en) 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
KR20120094834A (en) 2011-02-17 2012-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable lsi
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
JP5898527B2 (en) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 Semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827145B2 (en) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 Signal processing circuit
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8828794B2 (en) 2011-03-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9184296B2 (en) 2011-03-11 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having c-axis aligned portions and doped portions
JP6027320B2 (en) 2011-03-11 2016-11-16 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
JP5933300B2 (en) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 Semiconductor device
JP5933897B2 (en) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20140025384A (en) 2011-03-18 2014-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9472676B2 (en) 2011-03-25 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8754409B2 (en) 2011-03-25 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Field-effect transistor, and memory and semiconductor circuit including the same
JP6053098B2 (en) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 Semiconductor device
JP5879165B2 (en) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US8927329B2 (en) * 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
JP5839477B2 (en) 2011-03-31 2016-01-06 株式会社半導体エネルギー研究所 Memory circuit
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5982147B2 (en) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 The light-emitting device
US20120258575A1 (en) * 2011-04-06 2012-10-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5883699B2 (en) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 Programmable lsi
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP5890234B2 (en) 2011-04-15 2016-03-22 株式会社半導体エネルギー研究所 The semiconductor device and a driving method thereof
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
JP6001900B2 (en) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 Signal processing circuit
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN105931967A (en) 2011-04-27 2016-09-07 株式会社半导体能源研究所 Manufacturing method of semiconductor device
US8803559B2 (en) 2011-04-28 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit having switching element, capacitor, and operational amplifier circuit
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US9001563B2 (en) 2011-04-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP5882824B2 (en) 2011-04-29 2016-03-09 株式会社半導体エネルギー研究所 A semiconductor memory device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6005390B2 (en) 2011-05-05 2016-10-12 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6076616B2 (en) 2011-05-06 2017-02-08 株式会社半導体エネルギー研究所 Semiconductor device
KR20140029430A (en) 2011-05-06 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8947910B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising inverters and capacitor, and driving method thereof
JP2012238763A (en) * 2011-05-12 2012-12-06 Fujitsu Ltd Semiconductor device and method of manufacturing semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US8912985B2 (en) 2011-05-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
JP5959296B2 (en) 2011-05-13 2016-08-02 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE112012002077T5 (en) 2011-05-13 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140040128A (en) 2011-05-13 2014-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP5886128B2 (en) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
US8705292B2 (en) 2011-05-13 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory circuit with an oxide semiconductor transistor for reducing power consumption and electronic device
CN103534950B (en) 2011-05-16 2017-07-04 株式会社半导体能源研究所 Programmable logic device
JP6068829B2 (en) 2011-05-17 2017-01-25 株式会社半導体エネルギー研究所 Semiconductor device
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8824193B2 (en) 2011-05-18 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
JP6002433B2 (en) 2011-05-19 2016-10-05 株式会社半導体エネルギー研究所 The driving method of the arithmetic circuit and the ALU
JP5947101B2 (en) 2011-05-19 2016-07-06 株式会社半導体エネルギー研究所 circuit
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9172237B2 (en) 2011-05-19 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US9117920B2 (en) 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
JP5820336B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
US8729938B2 (en) 2011-05-20 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Phase locked loop and semiconductor device using the same
JP5947099B2 (en) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 Semiconductor device
CN102789808A (en) 2011-05-20 2012-11-21 株式会社半导体能源研究所 Memory device and method for driving memory device
JP5886496B2 (en) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
JP6091083B2 (en) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 Storage device
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
JP6030334B2 (en) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 Storage device
JP5936908B2 (en) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 Parity bit output circuit and the parity check circuit
JP6166866B2 (en) 2011-05-20 2017-07-19 株式会社半導体エネルギー研究所 Semiconductor device
US8587342B2 (en) 2011-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP5951351B2 (en) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 Adder and full adder
US9048105B2 (en) 2011-05-20 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP5820335B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP6013680B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6082189B2 (en) 2011-05-20 2017-02-15 株式会社半導体エネルギー研究所 Storage device and a signal processing circuit
JP5892852B2 (en) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 Programmable logic device
WO2012160963A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013682B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
KR20140035960A (en) 2011-05-26 2014-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Divider circuit and semiconductor device using the same
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
JP5912844B2 (en) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 Programmable logic device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112012002394T5 (en) 2011-06-08 2014-02-20 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method of manufacturing a sputter target and method for forming a thin film
JP5890251B2 (en) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 Communication method
US8958231B2 (en) 2011-06-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Memory device including first to seventh transistors
JP6104522B2 (en) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 Semiconductor device
JP6005401B2 (en) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US9112036B2 (en) 2011-06-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120139560A (en) 2011-06-16 2012-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and a method for manufacturing the same
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
WO2012172746A1 (en) 2011-06-17 2012-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9318506B2 (en) 2011-07-08 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
KR20130006310A (en) 2011-07-08 2013-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8912596B2 (en) 2011-07-15 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6013685B2 (en) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8878176B2 (en) 2011-08-11 2014-11-04 The Hong Kong University Of Science And Technology Metal-oxide based thin-film transistors with fluorinated active layer
JP6006572B2 (en) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device
US9136297B2 (en) 2011-08-19 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP6128775B2 (en) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
CN102629574A (en) * 2011-08-22 2012-08-08 京东方科技集团股份有限公司 Oxide TFT array substrate and manufacturing method thereof and electronic device
JP6116149B2 (en) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 Semiconductor device
KR20140066695A (en) 2011-08-29 2014-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6016532B2 (en) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6050054B2 (en) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (en) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 Power insulated-gate field-effect transistor
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832399B2 (en) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 The light-emitting device
CN103022012B (en) 2011-09-21 2017-03-01 株式会社半导体能源研究所 The semiconductor memory device
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
KR20130033308A (en) 2011-09-26 2013-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130034608A (en) 2011-09-28 2013-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register circuit
CN103843146B (en) 2011-09-29 2016-03-16 株式会社半导体能源研究所 Semiconductor device
KR101506303B1 (en) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140066222A (en) 2011-09-29 2014-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5806905B2 (en) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 Semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8975634B2 (en) 2011-10-07 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
JP6022880B2 (en) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
JP6026839B2 (en) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5912394B2 (en) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 Semiconductor device
KR20130040706A (en) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
CN104025301B (en) 2011-10-14 2017-01-18 株式会社半导体能源研究所 The semiconductor device
KR20130043063A (en) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20130044150A (en) 2011-10-21 2013-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20130045174A (en) 2011-10-24 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR20130045173A (en) 2011-10-24 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6226518B2 (en) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6082562B2 (en) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20140086954A (en) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8604472B2 (en) 2011-11-09 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5933895B2 (en) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
JP6122275B2 (en) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 Display device
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN103918025B (en) 2011-11-11 2016-12-21 株式会社半导体能源研究所 A signal line driving circuit and the liquid crystal display device
JP6076038B2 (en) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 The method for manufacturing a display device
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
JP6099368B2 (en) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 Storage device
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
CN102496631B (en) * 2011-11-25 2014-05-21 中山大学 ZnO-based full transparent non-volatile memory with back electrode structure and preparation method thereof
JP6125211B2 (en) 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6147992B2 (en) 2011-11-30 2017-06-14 株式会社半導体エネルギー研究所 Semiconductor device
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
KR20140096330A (en) 2011-11-30 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor display device
KR20130061070A (en) 2011-11-30 2013-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8956929B2 (en) 2011-11-30 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9130048B2 (en) 2011-12-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140101817A (en) 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8885437B2 (en) 2011-12-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Storage device and driving method thereof
JP6050662B2 (en) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR20150028760A (en) 2011-12-15 2015-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2013094621A1 (en) 2011-12-20 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2013130802A (en) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device, image display device, storage device, and electronic apparatus
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8861288B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Level-shift circuit and semiconductor integrated circuit
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6033071B2 (en) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 Semiconductor device
US8860021B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
JP6012450B2 (en) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
JP6053490B2 (en) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR20130075657A (en) 2011-12-27 2013-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8809154B2 (en) 2011-12-27 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130082068A (en) 2012-01-10 2013-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2013111757A1 (en) 2012-01-23 2013-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013111756A1 (en) 2012-01-25 2013-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9171957B2 (en) 2012-01-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6091905B2 (en) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9304523B2 (en) 2012-01-30 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and method for driving the same
JP6068994B2 (en) 2012-02-02 2017-01-25 株式会社半導体エネルギー研究所 Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130090338A (en) 2012-02-03 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP5981157B2 (en) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 Semiconductor device
JP6125850B2 (en) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 The method for manufacturing a semiconductor device and a semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
US9183894B2 (en) 2012-02-24 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6151530B2 (en) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 Image sensors, cameras and surveillance systems,
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6046514B2 (en) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
JP6100559B2 (en) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 A semiconductor memory device
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104160295B (en) 2012-03-09 2017-09-15 株式会社半导体能源研究所 The method of driving a semiconductor device
KR20130105390A (en) 2012-03-14 2013-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, transistor, and semiconductor device
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
JP6168795B2 (en) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
JP6169376B2 (en) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 Battery management unit, the protection circuit, the power storage device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
US9235515B2 (en) 2012-03-29 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Array controller and storage system
JP6139187B2 (en) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 Semiconductor device
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
WO2013146154A1 (en) 2012-03-29 2013-10-03 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
JP5975907B2 (en) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6059566B2 (en) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
JP6128906B2 (en) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
WO2013154195A1 (en) 2012-04-13 2013-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9035364B2 (en) 2012-04-13 2015-05-19 Au Optronics Corporation Active device and fabricating method thereof
JP6143423B2 (en) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 A method of manufacturing a semiconductor device
JP6076612B2 (en) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6001308B2 (en) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 Semiconductor device
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
JP6199583B2 (en) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 Semiconductor device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
CN102683424B (en) * 2012-04-28 2013-08-07 京东方科技集团股份有限公司 Display device and array substrate as well as thin film transistor and manufacturing method thereof
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6228381B2 (en) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6100071B2 (en) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
JP6035195B2 (en) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
KR20130123315A (en) 2012-05-02 2013-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Temperature sensor circuit and semiconductor device including temperature sensor circuit
JP6100076B2 (en) 2012-05-02 2017-03-22 株式会社半導体エネルギー研究所 Processor
US9261943B2 (en) 2012-05-02 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6243136B2 (en) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 Switching Converters
DE112013002281T5 (en) 2012-05-02 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. A programmable logic device
JP6227890B2 (en) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 Control circuits,
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130125717A (en) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
WO2013168624A1 (en) 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112013002407T5 (en) 2012-05-10 2015-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130126479A (en) 2012-05-10 2013-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
DE102013207324A1 (en) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20130126494A (en) 2012-05-11 2013-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP6050721B2 (en) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
JP6250955B2 (en) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 The driving method of a semiconductor device
US9479152B2 (en) 2012-05-25 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
KR20130132271A (en) 2012-05-25 2013-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving memory element
KR20150021021A (en) 2012-05-25 2015-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device and semiconductor device
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP2014007737A (en) 2012-05-30 2014-01-16 Semiconductor Energy Lab Co Ltd Programmable logic device
KR20150027123A (en) 2012-05-31 2015-03-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6208469B2 (en) 2012-05-31 2017-10-04 株式会社半導体エネルギー研究所 Semiconductor device
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
JP6158588B2 (en) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 The light-emitting device
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
CN104380473B (en) 2012-05-31 2017-10-13 株式会社半导体能源研究所 The semiconductor device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
JP6108960B2 (en) 2012-06-01 2017-04-05 株式会社半導体エネルギー研究所 Semiconductor device, the processing device
KR20150023547A (en) 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and alarm device
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
KR20140002500A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR20140002496A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20140002497A (en) 2012-06-29 2014-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of driving display device, and display device
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
KR20140008247A (en) 2012-07-11 2014-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
US9449569B2 (en) 2012-07-13 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving liquid crystal display device
JP6006558B2 (en) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
WO2014013958A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Display device
CN104488016A (en) 2012-07-20 2015-04-01 株式会社半导体能源研究所 Display device and electronic device including the display device
JP6185311B2 (en) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 Power supply control circuit, and a signal processing circuit
WO2014013959A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20140013931A (en) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
JP2014042004A (en) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
JP6224931B2 (en) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
US8981376B2 (en) 2012-08-02 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6134598B2 (en) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 Semiconductor device
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
KR20150038279A (en) 2012-08-03 2015-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor stacked film and semiconductor device
KR20150040873A (en) 2012-08-03 2015-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN104584229A (en) 2012-08-10 2015-04-29 株式会社半导体能源研究所 Semiconductor device and method for fabricating the same
JP6220597B2 (en) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150043361A (en) 2012-08-10 2015-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8975930B2 (en) 2012-08-10 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
KR20140020749A (en) 2012-08-10 2014-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20140020757A (en) 2012-08-10 2014-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving semiconductor device
US8878574B2 (en) 2012-08-10 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US9246047B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR20140026255A (en) 2012-08-24 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Radiation detection panel, radiation imaging device, and diagnostic imaging device
KR20140029202A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
DE102013216824A1 (en) 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR20140029181A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
US20140061869A1 (en) * 2012-08-31 2014-03-06 Shelby F. Nelson Electronic element including dielectric stack
KR20140030049A (en) 2012-08-31 2014-03-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20150052154A (en) 2012-09-03 2015-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Microcontroller
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
DE102013217278B4 (en) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetector circuit, imaging device and method for driving a photo detector circuit
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR20150053917A (en) 2012-09-13 2015-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20140035822A (en) 2012-09-14 2014-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for fabricating the same
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104662668A (en) 2012-09-24 2015-05-27 株式会社半导体能源研究所 The semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2014095894A (en) 2012-10-12 2014-05-22 Semiconductor Energy Lab Co Ltd Liquid crystal display device and driving method thereof
US9366896B2 (en) 2012-10-12 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and touch panel
KR20140047529A (en) 2012-10-12 2014-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
JP6021586B2 (en) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device
DE112013005029T5 (en) 2012-10-17 2015-07-30 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and manufacturing method thereof
KR20140049476A (en) 2012-10-17 2014-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20150067379A (en) 2012-10-17 2015-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5951442B2 (en) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 Semiconductor device
US9324875B2 (en) 2012-10-17 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150066533A (en) 2012-10-17 2015-06-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6059501B2 (en) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor device
WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6158674B2 (en) 2012-10-17 2017-07-05 株式会社半導体エネルギー研究所 The driving method of a programmable logic device
KR20140050542A (en) 2012-10-19 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
JP6204145B2 (en) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 Semiconductor device
KR20140052870A (en) 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9865743B2 (en) 2012-10-24 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide layer surrounding oxide semiconductor layer
KR20140052869A (en) 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (en) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 Display device and electronic equipment
CN104769842B (en) 2012-11-06 2017-10-31 株式会社半导体能源研究所 The semiconductor device and a driving method thereof
CN104769150A (en) 2012-11-08 2015-07-08 株式会社半导体能源研究所 Metal oxide film and method for forming metal oxide film
WO2014077207A1 (en) 2012-11-15 2014-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6220641B2 (en) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8901558B2 (en) 2012-11-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having multiple gates
US8921853B2 (en) 2012-11-16 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having oxide semiconductor layer
JP2014103142A (en) 2012-11-16 2014-06-05 Semiconductor Energy Lab Co Ltd Semiconductor device and display device
US9087726B2 (en) 2012-11-16 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9159838B2 (en) 2012-11-16 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9130367B2 (en) 2012-11-28 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2014084152A1 (en) 2012-11-30 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
JP2014130336A (en) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd Display device
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9324810B2 (en) 2012-11-30 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20140071234A (en) 2012-12-03 2014-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9406810B2 (en) 2012-12-03 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20140073427A (en) 2012-12-06 2014-06-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9391620B2 (en) 2012-12-24 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196639B2 (en) 2012-12-28 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014104267A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293598B2 (en) 2012-12-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor layer
CN104904018A (en) 2012-12-28 2015-09-09 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
US9343578B2 (en) 2012-12-28 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and measurement device
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9768314B2 (en) 2013-01-21 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6223198B2 (en) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP5807076B2 (en) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 Semiconductor device
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140101681A (en) 2013-02-12 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20140101688A (en) 2013-02-12 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150119862A (en) 2013-02-13 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄